Готові списки джерел за темами / Dielectrics and semiconductors

Добірка наукової літератури з теми "Dielectrics and semiconductors"

Автор: Grafiati
Опубліковано: 30 травня 2022
Оновлено: 31 травня 2022

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Статті в журналах з теми "Dielectrics and semiconductors"

1

Kim, Yong-Wan, and Young-Geun Ha. "Organic-Inorganic Hybrid Gate Dielectrics Using Self-Assembled Multilayers For Low-Voltage Operating Thin-Film Transistors." Korean Journal of Metals and Materials 60, no. 3 (March 5, 2022): 220–26. http://dx.doi.org/10.3365/kjmm.2022.60.3.220.

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Advanced electronic materials have attracted great interest for their potential use in flexible, large-area, and printable electronic applications. However, fabricating high-performance low-voltage thin-film transistors (TFTs) for those applications with these advanced semiconductors is still challenging because of a lack of dielectric materials which satisfy both the required electrical and physical performance. In this work, we report self-assembled hybrid multilayer gate dielectrics prepared using a facile solution procedure to achieve organic semiconductor and amorphous oxide semiconductor-based thin-film transistors with ultralow operating voltage. These self-assembled hybrid multilayer gate dielectrics were constructed by iterative self-assembly of synthesized bifunctional phosphonic acid-based organic molecules and ultrathin high-k hafnium oxide layers. The novel self-assembled hybrid multilayer gate dielectrics exhibit excellent dielectric properties with exceptionally large capacitances (up to 815 nF/ cm2) and low-level leakage current densities of < 1.56 × 10-6 A/cm2, featureless morphology (RMS roughness < 0.24 nm), and thermal stability (up to 300 °C). Consequently, these hybrid gate dielectrics can be incorporated into thin-film transistors with pentacene as p-type organic semiconductors, and with indium oxide as n-type inorganic semiconductors. The resulting TFTs functioned at ultralow voltages (< ± 2 V) and achieved high transistor performances (hole mobility: 0.88 cm2 / V·s, electron mobility: 7.8 cm2 / V·s and on/off current ratio >104, and threshold voltage: ± 0.5 V).
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2

Himpsel, F. J., U. O. Karlsson, F. R. McFeely, J. F. Morar, D. Rieger, A. Taleb-Ibrahimi, and J. A. Yarmoff. "Dielectrics on semiconductors." Materials Science and Engineering: B 1, no. 1 (August 1988): 9–13. http://dx.doi.org/10.1016/0921-5107(88)90025-6.

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3

Kim, Dae-Cheol, and Young-Geun Ha. "Self-Assembled Hybrid Gate Dielectrics for Ultralow Voltage of Organic Thin-Film Transistors." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 1761–65. http://dx.doi.org/10.1166/jnn.2021.19083.

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We developed self-assembled hybrid dielectric materials via a facile and low-temperature solution process. These dielectrics are used to facilitate ultralow operational voltage of organic thinfilm transistors. Self-assembly of bifunctional phosphonic acid and ultrathin hafnium oxide layers results in the self-assembled hybrid dielectrics. Additionally, the surface property of the top layer of hafnium oxide can be tuned by phosphonic acid-based self-assembled molecules to improve the function of the organic semiconductors. These novel hybrid dielectrics demonstrate great dielectric properties as low-level leakage current densities of <1.45×10−6 A/cm2, large capacitances (up to 800 nF/cm2), thermal stability (up to 300 °C), and featureless morphology (root-mean-square roughness ˜0.3 nm). As a result, self-assembled gate dielectrics can be incorporated into thin-film transistors with p-type organic semiconductors functioning at ultralow voltages (<-2 V) to achieve enhanced performance (hole mobility: 0.88 cm2/V·s, and Ion/Ioff: > 105, threshold voltage: 0.5 V).
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4

Droopad, R., M. Passlack, N. England, K. Rajagopalan, J. Abrokwah, and A. Kummel. "Gate dielectrics on compound semiconductors." Microelectronic Engineering 80 (June 2005): 138–45. http://dx.doi.org/10.1016/j.mee.2005.04.056.

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5

Kolchin, V. V., N. I. Barchukova, and E. M. Balashova. "Ceramic dielectrics, semiconductors, and superconductors." Glass and Ceramics 45, no. 4 (April 1988): 160–64. http://dx.doi.org/10.1007/bf00704510.

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6

Cheng, Ruoran, Chunli Zhang, Weiqiu Chen, and Jiashi Yang. "Temperature Effects on Mobile Charges in Extension of Composite Fibers of Piezoelectric Dielectrics and Non-Piezoelectric Semiconductors." International Journal of Applied Mechanics 11, no. 09 (November 2019): 1950088. http://dx.doi.org/10.1142/s1758825119500881.

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We study the redistribution of mobile charge carriers in a composite fiber of piezoelectric dielectrics and non-piezoelectric semiconductors in extensional deformation under a uniform temperature change. The macroscopic theory of piezoelectricity and the drift-diffusion theory of semiconductor are used, coupled by doping and mobile charges. A one-dimensional model for extension is developed. Through a theoretical analysis, it is shown that under a temperature change the mobile charges in the semiconductor redistribute themselves under the polarization and electric field produced through thermoelastic, pyroelectric and piezoelectric effects. The results suggest the possibility of using composite structures for thermally manipulating mobile charges in semiconductors and have potential applications in piezotronics.
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7

Dimoulas, Athanasios, Yerassimos Panayiotatos, Polychronis Tsipas, Sotiria Galata, Georgia Mavrou, Andreas Sotiropoulos, Chiara Marchiori, et al. "Gate Dielectrics for High Mobility Semiconductors." ECS Transactions 16, no. 5 (December 18, 2019): 295–306. http://dx.doi.org/10.1149/1.2981611.

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8

Yang, Allen Jian, Kun Han, Ke Huang, Chen Ye, Wen Wen, Ruixue Zhu, Rui Zhu та ін. "Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors". Nature Electronics 5, № 4 (квітень 2022): 233–40. http://dx.doi.org/10.1038/s41928-022-00753-7.

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AbstractTwo-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, semiconductors need to be integrated with high-quality dielectrics—which are challenging to deposit. Here we show that single-crystal strontium titanate—a high-κ perovskite oxide—can be integrated with two-dimensional semiconductors using van der Waals forces. Strontium titanate thin films are grown on a sacrificial layer, lifted off and then transferred onto molybdenum disulfide and tungsten diselenide to make n-type and p-type transistors, respectively. The molybdenum disulfide transistors exhibit an on/off current ratio of 108 at a supply voltage of 1 V and a minimum subthreshold swing of 66 mV dec−1. We also show that the devices can be used to create low-power complementary metal–oxide–semiconductor inverter circuits.
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9

Kalytka, Valerii A., Mikhail V. Korovkin, Ali Dz Mekhtiev, and Aliya D. Alkina. "DETAILED ANALYSIS OF NONLINEAR DIELECTRIC LOSSES IN PROTON SEMICONDUCTORS AND DIELECTRICS." Bulletin of the Moscow State Regional University (Physics and Mathematics), no. 4 (2017): 39–54. http://dx.doi.org/10.18384/2310-7251-2017-4-39-54.

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10

Burdov, Vladimir A., and Mikhail I. Vasilevskiy. "Exciton-Photon Interactions in Semiconductor Nanocrystals: Radiative Transitions, Non-Radiative Processes and Environment Effects." Applied Sciences 11, no. 2 (January 6, 2021): 497. http://dx.doi.org/10.3390/app11020497.

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In this review, we discuss several fundamental processes taking place in semiconductor nanocrystals (quantum dots (QDs)) when their electron subsystem interacts with electromagnetic (EM) radiation. The physical phenomena of light emission and EM energy transfer from a QD exciton to other electronic systems such as neighbouring nanocrystals and polarisable 3D (semi-infinite dielectric or metal) and 2D (graphene) materials are considered. In particular, emission decay and FRET rates near a plane interface between two dielectrics or a dielectric and a metal are discussed and their dependence upon relevant parameters is demonstrated. The cases of direct (II–VI) and indirect (silicon) band gap semiconductors are compared. We cover the relevant non-radiative mechanisms such as the Auger process, electron capture on dangling bonds and interaction with phonons. Some further effects, such as multiple exciton generation, are also discussed. The emphasis is on explaining the underlying physics and illustrating it with calculated and experimental results in a comprehensive, tutorial manner.
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Дисертації з теми "Dielectrics and semiconductors"

1

Vaklev, Nikolay Lyubomirov. "Organic field-effect transistors with printed dielectrics and semiconductors." Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/44879.

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This thesis presents the development of organic field-effect transistors with printed dielectric and semiconductors. The device architecture was bottom-gate bottom-contact. The electrodes were fabricated via standard photolithography. The first milestones were to gravure-coat the dielectric and structure it with photolithography. Dielectric formulations were screened for their ability to photopattern with radical photoinitiators. Variable processing conditions were also investigated such as annealing time and temperature. The preferred formulation and processing conditions gave ca. 130 nm thick dielectric films and 1-2 nm root-mean-square surface roughness. The dielectric films were tested in parallel capacitors and field-effect transistors. For comparison, the dielectric was also spin-cast and processed analogously to the gravure-coated films. Under the same conditions gravure-coating gave films with equal uniformity and insulating properties as spin-casting. Transistors were prepared with thermally-evaporated pentancene and TIPS-pentacene (6,13-bis(triisopropylsilylethynyl) pentacene) via spin- or zone-casting. The measured mobilities were amongst the highest reported in the literature for this material set and device architecture. The highest transistor mobility with TIPS-pentacene was achieved by blending the semiconductor with poly(a-methylstyrene) (PaMS). Device characteristics such as mobility, threshold voltage and sub-threshold swing voltage were calculated and their evolution with blending ratio followed. The semiconductor was either spin-cast onto pre-deposited PaMS layers with different thickness or TIPS-pentacene was blended with PaMS already in the ink. The work concluded with structured gravure-printing of the dielectric and semiconductor. Dielectric inks with different viscosity were printed and print quality investigated. The film thickness ranged between 60 and 500 nm. Exemplary films were used in the fabrication of transistors and complementary inverters. TIPS-pentacene was directly blended with polymer binders and printed.
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2

Ravindran, Ramasamy. "Deposition and characterization of high permittivity thin-film dielectrics." Diss., Columbia, Mo. : University of Missouri-Columbia, 2006. http://hdl.handle.net/10355/4530.

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Thesis (M.S.)--University of Missouri-Columbia, 2006.
The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on April 17, 2009) Includes bibliographical references.
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3

Sung, Taehyun. "Variable frequency microwave curing of polymer dielectrics on metallized organic substrates." Thesis, Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04082004-180423/unrestricted/sung%5ftaehyun%5f200312%5fms.pdf.

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4

Li, Chunxia, and 李春霞. "A study on gate dielectrics for Ge MOS devices." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2010. http://hub.hku.hk/bib/B43703872.

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Li, Chunxia. "A study on gate dielectrics for Ge MOS devices." Click to view the E-thesis via HKUTO, 2010. http://sunzi.lib.hku.hk/hkuto/record/B43703872.

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6

Huang, Amy. "On the plasma induced degradation of organosilicate glass (OSG) as an interlevel dielectric for sub 90 nm CMOS /." Online version of thesis, 2008. http://hdl.handle.net/1850/5899.

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7

Zeng, Xu, and 曾旭. "Electrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1996. http://hub.hku.hk/bib/B31235475.

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Zeng, Xu. "Electrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics /." Hong Kong : University of Hong Kong, 1996. http://sunzi.lib.hku.hk/hkuto/record.jsp?B1966980X.

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9

Lin, Limin. "A study of gate dielectrics for wide-bandgap semiconductors GaN & SiC /." Click to view the E-thesis via HKUTO, 2007. http://sunzi.lib.hku.hk/hkuto/record/B3932252X.

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Lin, Limin, and 林立旻. "A study of gate dielectrics for wide-bandgap semiconductors: GaN & SiC." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2007. http://hub.hku.hk/bib/B3932252X.

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Книги з теми "Dielectrics and semiconductors"

1

1922-, Basov N. G., ed. Fizika diėlektrikov i poluprovodnikov: Izbrannye trudy. Moskva: "Nauka", 1988.

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2

Synorov, V. F. Fizika MDP-struktur: Uchebnoe posobie. Voronezh: Izd-vo Voronezhskogo universiteta, 1989.

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3

Kiselev, V. F. Adsorption processes on semiconductor and dielectric surfaces I. Berlin: Springer-Verlag, 1985.

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4

China) Conference on semiconducting and Insulating Materials (13th 2004 Beijing. 2004 13th International Conference on Semiconducting & Insulating Materials: SIMC-XIII-2004 : September 20-25, 2004, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China. Edited by Wang Zhanguo, Chen Yonghai, Ye Xiaoling, IEEE Electron Devices Society, and Zhongguo ke xue yuan. Ban dao ti yan jiu suo. Piscataway, NJ: IEEE, 2004.

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5

Shvart͡s, K. K. Fizika opticheskoĭ zapisi v diėlektrikakh i poluprovodnikakh. Riga: "Zinatne", 1986.

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6

V, Krylov O., ed. Electronic phenomena in adsorption and catalysis on semiconductors and dielectrics. Berlin: Springer-Verlag, 1987.

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7

Kiselev, Vsevolod F., and Oleg V. Krylov. Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83020-4.

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8

Juraj, Breza, Dybecky F, Zat'ko B, IEEE Electron Devices Society, and Slovenská akadémia vied. Elektrotechnický ústav., eds. 2002 12th International Conference on Semiconducting and Insulating Materials: SIMC-XII-2002 : June 30 - July 5, 2002, Institute of Electrical Engineering, Slovak Academy of Science, Bratislava, Slovak Republic. Piscataway, NJ: IEEE, 2002.

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9

Symposium, on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors (1989 Hollywood Fla ). Proceedings of the Symposium on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors. Pennington, NJ: Electrochemical Society, 1990.

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10

Dmitruk, N. L. Poverkhnostnye poli͡a︡ritony v poluprovodnikakh i diėlektrikakh. Kiev: Nauk. dumka, 1989.

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Частини книг з теми "Dielectrics and semiconductors"

1

Naidyuk, Yu G., and I. K. Yanson. "PCS of semimetals, semiconductors, and dielectrics." In Springer Series in Solid-State Sciences, 175–91. New York, NY: Springer New York, 2005. http://dx.doi.org/10.1007/978-1-4757-6205-1_11.

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2

Kiselev, Vsevolod F., and Oleg V. Krylov. "Proton Processes on the Surfaces of Semiconductors and Insulators." In Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics, 214–47. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83020-4_9.

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3

Afanas'ev, Valeri V., Michel Houssa, and Andre Stesmans. "High-k Insulating Films on Semiconductors and Metals: General Trends in Electron Band Alignment." In High-k Gate Dielectrics for CMOS Technology, 273–92. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527646340.ch8.

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4

Kiselev, Vsevolod F., and Oleg V. Krylov. "The Energy Spectrum of Semiconductor Surfaces." In Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics, 24–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83020-4_3.

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5

Kiselev, Vsevolod F., and Oleg V. Krylov. "Electron Processes in Semiconductor Adsorbents and Catalysts." In Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics, 67–91. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83020-4_4.

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6

Kiselev, Vsevolod F., and Oleg V. Krylov. "Catalysis and Electronic Phenomena on Real Semiconductor Surfaces." In Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics, 165–82. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83020-4_7.

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7

Kiselev, Vsevolod F., and Oleg V. Krylov. "The Phenomenological Description of Electronic Processes on Semiconductor Surfaces." In Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics, 4–23. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83020-4_2.

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8

Kiselev, Vsevolod F., and Oleg V. Krylov. "The Electron Theory of Chemisorption and Catalysis on Ideal Semiconductor Surfaces." In Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics, 92–112. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83020-4_5.

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9

Kiselev, Vsevolod F., and Oleg V. Krylov. "Introduction." In Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics, 1–3. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83020-4_1.

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10

Kiselev, Vsevolod F., and Oleg V. Krylov. "The Effects of Adsorption on the Electrophysical Parameters of Real Semiconductor Surfaces." In Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics, 113–64. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83020-4_6.

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Тези доповідей конференцій з теми "Dielectrics and semiconductors"

1

Craven, A. J., M. MacKenzie, and D. W. McComb. "Nanoanalysis of high-k dielectrics on semiconductors." In 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IEEE, 2008. http://dx.doi.org/10.1109/ipfa.2008.4588201.

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2

Vaicikauskas, Viktoras V. "Far-infrared SEW spectroscopy of semiconductors and dielectrics." In LAMILADIS '91: International Workshop--Laser Microtechnology and Laser Diagnostics of Surfaces, edited by Nikolai I. Koroteev and Vladislav Y. Panchenko. SPIE, 1992. http://dx.doi.org/10.1117/12.58655.

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3

Kalytka, V. A., and T. Yu Nikonova. "Non - linear electrical properties of proton semiconductors and dielectrics." In 2016 13th International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE). IEEE, 2016. http://dx.doi.org/10.1109/apeie.2016.7807079.

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4

Juodkazis, Saulius, Koichi Nishimura, Hiroki Okuno, Yusuke Tabuchi, Shigeki Matsuo, Satoru Tanaka, and Hiroaki Misawa. "Three-dimensional laser microfabrication of metals, semiconductors, and dielectrics." In International Conference on Lasers, Applications, and Technologies '07, edited by Vladislav Y. Panchenko, Oleg A. Louchev, and Sergei Malyshev. SPIE, 2007. http://dx.doi.org/10.1117/12.751889.

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5

Jurlewicz, Agnieszka, and Justyna Trzmiel. "Two-power-law relaxation processes in semiconductors possessing metastable defects." In 2013 IEEE International Conference on Solid Dielectrics (ICSD). IEEE, 2013. http://dx.doi.org/10.1109/icsd.2013.6619740.

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6

Lee, Min Seung, Dong Uk Lee, Jae-Hoon Kim, Eun Kyu Kim, Won Mok Kim, and Won Ju Cho. "Characteristics of nano floating gate memory with Au nano-particles and SiON dielectrics." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730420.

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7

Kato, K., D. Matsushita, K. Muraoka, and Y. Nakasaki. "Physical mechanism and ultimate improvement of Vfb shifts of SiN based SiON gate dielectrics." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730429.

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Yu, Zhihao, Hongkai Ning, Weisheng Li, Lei Liu, Wanqing Meng, Zhongzhong Luo, Songhua Cai, et al. "Reliability of Ultrathin High $-\mathcal{K}$ Dielectrics on 2D Semiconductors." In 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2021. http://dx.doi.org/10.1109/edtm50988.2021.9420995.

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9

Belousov, Yu M., and I. V. Chernousov. "Crystal lattice vibrations near charged center in dielectrics and semiconductors." In MIPT (PHYSTECH) - QUANT 2020. AIP Publishing, 2021. http://dx.doi.org/10.1063/5.0055010.

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10

Korsunskaya, Nadezhda E., Nicolai R. Kulish, Grigory S. Pekar, and Aleksandr F. Singaevsky. "Express method for optical strength diagnostics in transparent dielectrics and semiconductors." In Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, edited by Sergei V. Svechnikov and Mikhail Y. Valakh. SPIE, 1994. http://dx.doi.org/10.1117/12.191984.

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Звіти організацій з теми "Dielectrics and semiconductors"

1

Jonscher, Andrew K., and Mohammad A. Bari. Dielectric Spectroscopy of Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, December 1988. http://dx.doi.org/10.21236/ada203457.

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2

Jonscher, Andrew K., and Mohammad A. Bari. Dielectric Spectroscopy of Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, July 1988. http://dx.doi.org/10.21236/ada197992.

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3

Jonscher, Andrew K., Mohammad A. Bari, and Najeeb Siddiqui. Dielectric Spectroscopy of Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, July 1990. http://dx.doi.org/10.21236/ada229559.

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4

Kutz, Howard E. Electron Transporting Semiconductor Dielectric Intramolecular. Fort Belvoir, VA: Defense Technical Information Center, April 2012. http://dx.doi.org/10.21236/ada582461.

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5

Hubert, C. A., J. A. Lubin, W. H. Yang, and T. E. Huber. Synthesis and Optical Properties of Dense Semiconductor-Dielectric Nanocomposites. Fort Belvoir, VA: Defense Technical Information Center, January 1993. http://dx.doi.org/10.21236/ada271304.

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6

Butler, Jerome K. Millimeter-Wave Applications of Semiconductor Dielectric Waveguides with Plasma Layers (Surface or Buried) Generated from Semiconductor Lasers. Fort Belvoir, VA: Defense Technical Information Center, September 1992. http://dx.doi.org/10.21236/ada260484.

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7

Marcus, R. A. Reorganization Free Energy for Electron Transfers at Liquid-Liquid and Dielectric Semiconductor-Liquid Interfaces. Fort Belvoir, VA: Defense Technical Information Center, July 1989. http://dx.doi.org/10.21236/ada212985.

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8

Mu, R., A. Ueda, Y. S. Tung, D. O. Henderson, J. G. Zhu, J. D. Budai, and C. W. White. Stark effects on band gap and surface phonons of semiconductor quantum dots in dielectric hosts. Office of Scientific and Technical Information (OSTI), January 1996. http://dx.doi.org/10.2172/219349.

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