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Статті в журналах з теми "Defects formation"
Zhan, Hai Fei, Yuan Tong Gu, Cheng Yan, and Prasad K. D. V. Yarlagadda. "Numerical Exploration of the Defect’s Effect on Mechanical Properties of Nanowires under Torsion." Advanced Materials Research 335-336 (September 2011): 498–501. http://dx.doi.org/10.4028/www.scientific.net/amr.335-336.498.
Повний текст джерелаMelikhova, Oksana, Jakub Čížek, Ivan Procházka, Tetyana E. Konstantinova, and Igor A. Yashchishyn. "Inhibition of Positronium Formation in Yttria Stabilized Zirconia Nanopowders Modified by Addition of Chromia." Materials Science Forum 733 (November 2012): 249–53. http://dx.doi.org/10.4028/www.scientific.net/msf.733.249.
Повний текст джерелаKumar, Deepak, and Manu Khare. "Formation and Control of Defects in Iron Castings." International Journal of Scientific Research 2, no. 5 (June 1, 2012): 245–46. http://dx.doi.org/10.15373/22778179/may2013/81.
Повний текст джерелаYoshino, M., Y. Shinzato, and Masahiko Morinaga. "Energetics of Native Defects in Al2O3 and SiO2." Materials Science Forum 449-452 (March 2004): 713–16. http://dx.doi.org/10.4028/www.scientific.net/msf.449-452.713.
Повний текст джерелаGoyal, Anuj, Kiran Mathew, Richard G. Hennig, Aleksandr Chernatynskiy, Christopher R. Stanek, Samuel T. Murphy, David A. Andersson, Simon R. Phillpot, and Blas P. Uberuaga. "The Conundrum of Relaxation Volumes in First-Principles Calculations of Charged Defects in UO2." Applied Sciences 9, no. 24 (December 4, 2019): 5276. http://dx.doi.org/10.3390/app9245276.
Повний текст джерелаXiao, Zhong Yin, Jian Xiang Wen, Wen Yun Luo, Wen Kai Wu, Ren Xiang Gong, Jian Chong Yin, and Ting Yun Wang. "Formation of Thermally Induced Defects in Silica Optical Material." Advanced Materials Research 853 (December 2013): 62–67. http://dx.doi.org/10.4028/www.scientific.net/amr.853.62.
Повний текст джерелаCONRAD, EDWARD H. "THE STABILITY OF LOW INDEX METAL SURFACES TO TOPOLOGICAL DEFECTS." International Journal of Modern Physics B 05, no. 03 (February 10, 1991): 427–59. http://dx.doi.org/10.1142/s0217979291000274.
Повний текст джерелаKhomichev, V. L. "DEFECTS OF ORE FORMATION ANALYSIS." Geology and mineral resources of Siberia, no. 2 (2021): 92–98. http://dx.doi.org/10.20403/2078-0575-2021-2-92-98.
Повний текст джерелаDarmon, Alexandre, Michael Benzaquen, David Seč, Simon Čopar, Olivier Dauchot, and Teresa Lopez-Leon. "Waltzing route toward double-helix formation in cholesteric shells." Proceedings of the National Academy of Sciences 113, no. 34 (August 4, 2016): 9469–74. http://dx.doi.org/10.1073/pnas.1525059113.
Повний текст джерелаVachaspati, Tanmay. "Formation of topological defects." Physical Review D 44, no. 12 (December 15, 1991): 3723–29. http://dx.doi.org/10.1103/physrevd.44.3723.
Повний текст джерелаДисертації з теми "Defects formation"
Cho, S. Y. "Formation and suppression of fluorenone defects in polyfluorenes." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597627.
Повний текст джерелаDonaire, Manuel. "Formation of topological defects in gauge field theories." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613012.
Повний текст джерелаNigmatullin, Ramil. "Formation and dynamics of structural defects in ion chains." Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/24567.
Повний текст джерелаThomas, Brian Gordon. "Investigation of panel crack formation in steel ingots using mathematical and physical models." Thesis, University of British Columbia, 1985. http://hdl.handle.net/2429/25980.
Повний текст джерелаApplied Science, Faculty of
Mining Engineering, Keevil Institute of
Graduate
De, Weerdt Filip. "Spectroscopic studies of defects in diamond including their formation and dissociation." Thesis, King's College London (University of London), 2007. https://kclpure.kcl.ac.uk/portal/en/theses/spectroscopic-studies-of-defects-in-diamond-including-their-formation-and-dissociation(b05e7748-c1ff-4c57-9c24-ec5cb84baddf).html.
Повний текст джерелаDu, Yaojun. "The dynamics of Si small point defects and formation of Si extended structures." Connect to resource, 2005. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1126900310.
Повний текст джерелаTitle from first page of PDF file. Document formatted into pages; contains xix, 133 p.; also includes graphics (some col.). Includes bibliographical references (p. 126-133). Available online via OhioLINK's ETD Center
Wang, Zhihong 1972. "Modeling microdefects formation in crystalline silicon : the roles of point defects and oxygen." Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/16905.
Повний текст джерелаIncludes bibliographical references (p. 225-233).
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Most microelectronic devices are fabricated on single crystalline silicon substrates that are grown from the melt by the Czochralski crystal growth method. There is an ever increasing demand for control of size and density of microdefects in the silicon for control of quality and uniformity of the fabricated microelectronic devices. This thesis is aimed at developing a fundamental understanding of the mechanisms for formation of such microdefects through the development of models, theoretical analysis and large-scale simulation. Two major problems have been addressed. First, following the work of T. Sinno [150] and T. Mori [108], models have been developed for the transport, reaction and aggregation of native point defects - self-interstitials ('s) and vacancies (V's) - in crystalline silicon, so as to explain the dynamics of void formation (aggregation of V's) and stacking faults (aggregation of I's). Second, the model of point defect and cluster dynamics has been extended to include oxygen, the most common impurity in silicon, and to model oxide precipitation, an important step in silicon wafer preparation and device processing. The models of microdefect formation begin with transport equations for native point defects that include transport by diffusion and convection (crystal motion), recombination of Is and Vs, and the loss of point defects to clusters. Cluster formation is modeled by a combination of discrete rate equations for small-sized clusters (less than 100) and continuous Fokker-Planck equations for large cluster sizes. Simulation methods are developed for calculating, in time, space and cluster size, the evolution of point defect and cluster profiles, as a function of the temperature distribution in the crystal.
(cont.) Considerable effort has been devoted to analysis of the critical operating conditions that divide the crystal into V-rich and I-rich regions. As analyzed by Sinno [151], these radial regions of a CZ-grown silicon crystal are distinguished by a critical value of V/G=(V/G)crit, where V is the crystal pull rate and G is a measure of the axial temperature gradient at the melt/crystal interface. Numerical simulations identify that the evolution of microdefects at an axial slice of the crystal can be divided into three regions: (1) the region of rapid point defect dynamics near the melt-crystal interface, (2) a region of intermediate point defect concentrations where the crystal to too hot for these concentrations to become super-saturated, and (3) the nucleation and growth of point defect clusters caused by homogeneous nucleation and super-saturation. Asymptotic analysis of void formation is carried out in each of these regions and linked by point defect conservation to give predictions for a number of very important values, including (V/G)crit, the intermediate vacancy concentration, the void nucleation temperature, the total void concentration in the crystal and the average void size. These results agree remarkably well with simulations. Moreover, the asymptotic results give the foundation for creating a simple simulation tool for prediction of the dependence of these parameters on operating conditions. The framework for microdefect formation is extended to oxygen precipitation by including oxygen dynamics and precipitation ...
by Zhihong Wang.
Ph.D.
Cantin, G. M. Delphine. "An investigation of the formation of hollow bead defects in pipeline field welds /." Title page, contents and abstract only, 1997. http://web4.library.adelaide.edu.au/theses/09PH/09phc231.pdf.
Повний текст джерелаCunningham, Ross W. "Defect Formation Mechanisms in Powder-Bed Metal Additive Manufacturing." Research Showcase @ CMU, 2018. http://repository.cmu.edu/dissertations/1160.
Повний текст джерелаRyningen, Birgit. "Formation and growth of crystal defects in directionally solidified multicrystalline silicon for solar cells." Doctoral thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for materialteknologi, 2008. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-4980.
Повний текст джерелаКниги з теми "Defects formation"
Davis, Anne-Christine, and Robert Brandenberger, eds. Formation and Interactions of Topological Defects. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1883-9.
Повний текст джерелаHill, C. T. Cosmological structure formation from soft topological defects. Batavia, IL: Fermi National Accelerator Laboratory, 1988.
Знайти повний текст джерелаDavis, Anne-Christine. Formation and Interactions of Topological Defects: Proceedings of a NATO Advanced Study Institute on Formation and Interactions of Topological Defects, held August 22-September 2, 1994, in Cambridge, England. Boston, MA: Springer US, 1995.
Знайти повний текст джерелаPatterson, James D. Electronic characterization of defects in narrow gap semiconductors: Final report, November 25, 1992 to November 25, 1994. Marshall Space Flight Center, AL: [National Aeronautics and Space Administration], George C. Marshall Space Flight Center, 1994.
Знайти повний текст джерелаPatterson, James D. Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in Mercury Cadmium Telluride Mercury Zinc Telluride and Mercury Zinc Selenide, semi-annual report, September 19, 1994 to March 19, 1995. [Washington, D.C: National Aeronautics and Space Administration, 1995.
Знайти повний текст джерелаS, Suresh, ed. Thin film materials: Stress, defect formation and surface evolution. Cambridge: Cambridge University Press, 2003.
Знайти повний текст джерелаFreund, L. B. Thin film materials: Stress, defect formation, and surface evolution. Cambridge, [England] ; New York: Cambridge University Press, 2009.
Знайти повний текст джерелаFreund, L. B. Thin film materials: Stress, defect formation, and surface evolution. Cambridge, [England] ; New York: Cambridge University Press, 2009.
Знайти повний текст джерелаAnne-Christine, Davis, Brandenberger Robert Hans, North Atlantic Treaty Organization. Scientific Affairs Division., and NATO Advanced Study Institute on Formation and Interactions of Topological Defects (1994 : Cambridge, England), eds. Formation and interactions of topological defects. New York: Plenum Press, 1995.
Знайти повний текст джерелаHodges, Hardy M. Formation of topological defects in phase transitions. 1989.
Знайти повний текст джерелаЧастини книг з теми "Defects formation"
Wada, Kazumi. "Point Defect Formation Near Surfaces." In Defects in Optoelectronic Materials, 33–42. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367811297-3.
Повний текст джерелаOkumura, Tsugunori. "Defects induced by Metal-Semiconductor Contacts Formation." In Defects in Optoelectronic Materials, 205–53. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367811297-7.
Повний текст джерелаKleman, Maurice. "The Topological Classification of Defects." In Formation and Interactions of Topological Defects, 27–61. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1883-9_2.
Повний текст джерелаEvans, J. H. "Irradiation-Induced Cavity Lattice Formation in Metals." In Patterns, Defects and Materials Instabilities, 347–70. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0593-1_23.
Повний текст джерелаBray, A. J. "Topological Defects and Phase Ordering Dynamics." In Formation and Interactions of Topological Defects, 105–38. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1883-9_5.
Повний текст джерелаDworschak, K., J. S. Preston, J. E. Sipe, and H. M. Driel. "Pattern Formation during CW Laser Melting of Silicon." In Patterns, Defects and Materials Instabilities, 331–46. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0593-1_22.
Повний текст джерелаMurphy, S. M. "The Formation of Clusters of Cavities during Irradiation." In Patterns, Defects and Materials Instabilities, 371–80. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0593-1_24.
Повний текст джерелаDurrer, Ruth. "Global Field Dynamics and Cosmological Structure Formation." In Formation and Interactions of Topological Defects, 255–81. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1883-9_10.
Повний текст джерелаKibble, T. W. B. "Phase Transitions in the Early Universe and Defect Formation." In Formation and Interactions of Topological Defects, 1–26. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1883-9_1.
Повний текст джерелаTurok, Neil. "Electroweak Baryogenesis." In Formation and Interactions of Topological Defects, 283–301. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1883-9_11.
Повний текст джерелаТези доповідей конференцій з теми "Defects formation"
Wei, Yayi, Stefan Brandl, and Frank Goodwin. "Formation mechanism of 193nm immersion defects and defect reduction strategies." In SPIE Advanced Lithography, edited by Clifford L. Henderson. SPIE, 2008. http://dx.doi.org/10.1117/12.771221.
Повний текст джерелаKasuya, Shinta, and Masahiro Kawasaki. "Formation of topological defects during preheating." In COSMO--98. ASCE, 1999. http://dx.doi.org/10.1063/1.59444.
Повний текст джерелаGoryachev, Andrei. "Synchronization line defects in oscillatory and excitable media." In Stochastic dynamics and pattern formation in biological systems. AIP, 2000. http://dx.doi.org/10.1063/1.59938.
Повний текст джерелаHan, Yujie, Xunlang Liu, Jinghua Jiao, and Lanying Lin. "Formation mechanism of defects in annealed InP." In Asia Pacific Symposium on Optoelectronics '98, edited by Marek Osinski and Yan-Kuin Su. SPIE, 1998. http://dx.doi.org/10.1117/12.311026.
Повний текст джерелаSpergel, David N. "Topological Defects and the Formation of Structure." In Proceedings of the 1993 Theoretical Advanced Study Institute in Elementary Particle Physics. WORLD SCIENTIFIC, 1994. http://dx.doi.org/10.1142/9789814503785_0017.
Повний текст джерелаShiu, Lin-Hung, Fu-Jye Liang, Hsing Chang, Chun-Kuang Chen, Li-Jui Chen, Tsai-Sheng Gau, and Burn J. Lin. "Immersion defect reduction, part II: the formation mechanism and reduction of patterned defects." In Advanced Lithography, edited by Donis G. Flagello. SPIE, 2007. http://dx.doi.org/10.1117/12.712527.
Повний текст джерелаSmyntyna, V., O. Kulinich, M. Glauberman, G. Chemeresuk, I. Yatsunskiy, and O. Sviridova. "Influence of Initial Silicon Defects on Processes of the Dioxide Silicon Defect Formation." In 2006 16th International Crimean Microwave and Telecommunication Technology. IEEE, 2006. http://dx.doi.org/10.1109/crmico.2006.256126.
Повний текст джерелаShin, Min Hyo, Jong Man Han, Young Su Lee, and Hee Woong Kang. "Study on Defect Formation Mechanisms in ERW for API Steel." In 2014 10th International Pipeline Conference. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/ipc2014-33082.
Повний текст джерелаMutter, Daniel, and Scott T. Dunham. "Formation energies of carbon related defects in Cu2ZnSnS4." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925407.
Повний текст джерелаRen, Qin, Hongyu Li, and Masaya Kawano. "Yield Impacting Defects and Prevention of Microbump Formation." In 2019 IEEE 21st Electronics Packaging Technology Conference (EPTC). IEEE, 2019. http://dx.doi.org/10.1109/eptc47984.2019.9026698.
Повний текст джерелаЗвіти організацій з теми "Defects formation"
Suranuntchai, Surasak, and Prarop Kritboonyarit. Limit Diagrams for Selecting Process Parameters to Prevent Defects Formation during Forward Bar Extrusion Using FEM. Warrendale, PA: SAE International, October 2005. http://dx.doi.org/10.4271/2005-32-0043.
Повний текст джерелаde Sousa, Eduardo, Renata Matsui, Leonardo Boldrini, Leandra Baptista, and José Mauro Granjeiro. Mesenchymal stem cells for the treatment of articular cartilage defects of the knee: an overview of systematic reviews. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, December 2022. http://dx.doi.org/10.37766/inplasy2022.12.0114.
Повний текст джерелаShomer, Ilan, Ruth E. Stark, Victor Gaba, and James D. Batteas. Understanding the hardening syndrome of potato (Solanum tuberosum L.) tuber tissue to eliminate textural defects in fresh and fresh-peeled/cut products. United States Department of Agriculture, November 2002. http://dx.doi.org/10.32747/2002.7587238.bard.
Повний текст джерелаFabietti, L. M. R. Interface stability and defect formation during crystal growth. Office of Scientific and Technical Information (OSTI), January 1991. http://dx.doi.org/10.2172/5943509.
Повний текст джерелаMatragrano, M., and D. G. Ast. Defect formation in low mismatch systems. Final report. Office of Scientific and Technical Information (OSTI), May 1998. http://dx.doi.org/10.2172/610274.
Повний текст джерелаMENDEZ, P. F., and T. W. EAGAR. PENETRATION AND DEFECT FORMATION IN HIGH CURRENT ARC WELDING. Office of Scientific and Technical Information (OSTI), January 2003. http://dx.doi.org/10.2172/835707.
Повний текст джерелаCooper, B. R., L. S. Muratov, B. S. J. Kang, and K. Z. Li. Mechanisms of defect complex formation and environmental-assisted fracture behavior of iron aluminides. Office of Scientific and Technical Information (OSTI), December 1997. http://dx.doi.org/10.2172/330677.
Повний текст джерелаZinkle, S. J., L. L. Snead, and D. J. Edwards. Comparison of defect cluster accumulation and pattern formation in irradiated copper and nickel. Office of Scientific and Technical Information (OSTI), April 1995. http://dx.doi.org/10.2172/114927.
Повний текст джерелаFeenstra, R., S. J. Pennycook, and M. F. Chisholm. Defect formation and carrier doping in epitaxial films of the infinite layer compound. Office of Scientific and Technical Information (OSTI), February 1996. http://dx.doi.org/10.2172/219355.
Повний текст джерелаColtrin, M. E., and D. S. Dandy. Simplified models of growth, defect formation, and thermal conductivity in diamond chemical vapor deposition. Office of Scientific and Technical Information (OSTI), April 1996. http://dx.doi.org/10.2172/233352.
Повний текст джерела