Готові списки джерел за темами / CARRIER RELIABILITY

Добірка наукової літератури з теми "CARRIER RELIABILITY"

Автор: Grafiati
Опубліковано: 11 вересня 2023

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Статті в журналах з теми "CARRIER RELIABILITY"

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NASEH, SASAN, and M. JAMAL DEEN. "RF CMOS RELIABILITY." International Journal of High Speed Electronics and Systems 11, no. 04 (December 2001): 1249–95. http://dx.doi.org/10.1142/s0129156401001088.

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In this chapter the effects of hot carrier on the reliability of NMOS transistors are investigated. First, it is explained why the hot carrier issue can be important in RF CMOS circuits. Important mechanisms of hot carrier generation are reviewed and some of the techniques used in the measurement of hot carrier damages are explained. Next, results of measurement of DC hot carrier stress on the NMOS transistors are presented. The main focus here is the RF performance of the NMOS devices and circuits mode of them, but DC parameters of the device such as its I-V characteristics and threshold voltage are presented, as they directly affect the RF performance. Finally, using the measurements of hot carrier effects on single NMOS transistors, the effects of hot carriers on three parameters of a low noise amplifier, matching, power gain and stability, are predicted using circuit simulation.
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2

ZHAO, Lijuan. "Reliability Design of Shearer's Planet Carrier." Journal of Mechanical Engineering 55, no. 8 (2019): 192. http://dx.doi.org/10.3901/jme.2019.08.192.

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3

Cheng, Junji, and Xingbi Chen. "Hot-carrier reliability in OPTVLD-LDMOS." Journal of Semiconductors 33, no. 6 (June 2012): 064003. http://dx.doi.org/10.1088/1674-4926/33/6/064003.

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4

Jie Liao, Cher Ming Tan, and Geert Spierings. "Hot-Carrier Reliability of Power SOI EDNMOS." IEEE Transactions on Power Electronics 25, no. 7 (July 2010): 1685–91. http://dx.doi.org/10.1109/tpel.2010.2041255.

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5

Soares, C. Guedes, and A. P. Teixeira. "Structural reliability of two bulk carrier designs." Marine Structures 13, no. 2 (March 2000): 107–28. http://dx.doi.org/10.1016/s0951-8339(00)00004-6.

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6

Koeppel, Gaudenz, and Göran Andersson. "Reliability modeling of multi-carrier energy systems." Energy 34, no. 3 (March 2009): 235–44. http://dx.doi.org/10.1016/j.energy.2008.04.012.

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Sugiharto, D. S., C. Y. Yang, Huy Le, and J. E. Chung. "Beating the heat [CMOS hot-carrier reliability]." IEEE Circuits and Devices Magazine 14, no. 5 (1998): 43–51. http://dx.doi.org/10.1109/101.721519.

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Hwang, Hyunsang, Jack Lee, Pierre Fazan, and Chuck Dennison. "Hot-carrier reliability characteristics of narrow-width MOSFETs." Solid-State Electronics 36, no. 4 (April 1993): 665–66. http://dx.doi.org/10.1016/0038-1101(93)90284-w.

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9

Aur, S., and Ping Yang. "IVB-6 hot-carrier reliability of trench transistor." IEEE Transactions on Electron Devices 34, no. 11 (November 1987): 2374. http://dx.doi.org/10.1109/t-ed.1987.23289.

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10

Minehane, S., S. Healy, P. O'Sullivan, K. McCarthy, A. Mathewson, and B. Mason. "Direct parameter extraction for hot-carrier reliability simulation." Microelectronics Reliability 37, no. 10-11 (October 1997): 1437–40. http://dx.doi.org/10.1016/s0026-2714(97)00081-4.

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Дисертації з теми "CARRIER RELIABILITY"

1

Tsarouchas, Ioannis. "Through life reliability of a bulk carrier." Thesis, University of Glasgow, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368736.

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Jiang, Wenjie 1963. "Hot-carrier reliability assessment in CMOS digital integrated circuits." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/47514.

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Chan, Vei-Han. "Hot-carrier reliability evaluation for CMOS devices and circuits." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/36532.

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4

Wang, Lei. "Reliability control of GNSS carrier-phase integer ambiguity resolution." Thesis, Queensland University of Technology, 2015. https://eprints.qut.edu.au/86976/1/Lei_Wang_Thesis.pdf.

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This research investigates how to obtain accurate and reliable positioning results with global navigation satellite systems (GNSS). The work provides a theoretical framework for reliability control in GNSS carrier phase ambiguity resolution, which is the key technique for precise GNSS positioning in centimetre levels. The proposed approach includes identification and exclusion procedures of unreliable solutions and hypothesis tests, allowing the reliability of solutions to be controlled in the aspects of mathematical models, integer estimation and ambiguity acceptance tests. Extensive experimental results with both simulation and observed data sets effectively demonstrate the reliability performance characteristics based on the proposed theoretical framework and procedures.
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5

Le, Huy X. P. "Characterization of hot-carrier reliability in analog sub-circuit design." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/41379.

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Анотація:
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
Includes bibliographical references (leaves 52-54).
by Huy X.P. Le.
M.Eng.
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6

Kim, SeokWon Abraham 1970. "Hot-carrier reliability of MOSFETs at room and cryogenic temperature." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/28215.

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Анотація:
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
Vita.
Includes bibliographical references.
Hot-carrier reliability is an increasingly important issue as the geometry scaling of MOSFET continues down to the sub-quarter micron regime. The power-supply voltage does not scale at the same rate as the device dimensions, and thus, the peak lateral E-field in the channel increases. Hot-carriers, generated by this high lateral E-field, gain more kinetic energy and cause damage to the device as the geometry dimension of MOSFETs shortens. In order to model the device hot-carrier degradation accurately, accurate model parameter extraction is critically important. This thesis discusses the model parameters' dependence on the stress conditions and its implications in terms of the device lifetime prediction procedure. As geometry scaling approaches the physical limit of fabrication techniques, such as photolithography, temperature scaling becomes a more viable alternative. MOSFET performance enhancement has been investigated and verified at cryogenic temperatures, such as at 77K. However, hot-carrier reliability problems have been shown to be exacerbated at low temperature. As the mean-free path increases at low temperature due to reduced phonon-scattering, hot-carriers become more energetic at low temperature, causing more device degradation. It is clear that various hot-carrier reliability issues must be clearly understood in order to optimize the device performance vs. reliability trade-off, both at short channel lengths and low temperatures. This thesis resolves numerous, unresolved issues of hot-carrier reliability at both room and cryogenic temperature, and develops a general framework for hot carrier reliability assessment.
by SeokWon Abraham Kim.
Ph.D.
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7

Jiang, Liangjun. "HOT CARRIER EFFECT ON LDMOS TRANSISTORS." Doctoral diss., University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3230.

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One of the main problems encountered when scaling down is the hot carrier induced degradation of MOSFETs. This problem has been studied intensively during the past decade, under both static and dynamic stress conditions. In this period it has evolved from a more or less academic research topic to one of the most stringent constraints guaranteeing the lifetime of sub-micron devices. New drain engineering technique leads to the extensive usage of lateral doped drain structures. In these devices the peak of the lateral field is lowered by reducing the doping concentration near the drain and by providing a smooth junction transition instead of an abrupt one. Therefore, the amount of hot carrier generation for a given supply voltage and the influence of a certain physical damage on the electrical characteristics is decreased dramatically. A complete understanding of the hot carrier degradation problem in sub-micron 0.25um LD MOSFETs is presented in this work. First we discuss the degradation mechanisms observed under, for circuit operation, somewhat artificial but well-controlled uniform-substrate hot electron and substrate hot-hole injection conditions. Then the more realistic case of static channel hot carrier degradation is treated, and some important process-related effects are illustrated, followed by the behavior under the most relevant case for real operation, namely dynamic degradation. An Accurate and practical parameter extraction is used to obtain the LD MOSFETs model parameters, with the experiment verification. Good agreement between the model simulation and experiment is achieved. The gate charge transfer performance is examined to demonstrate the hot carrier effect. Furthermore, In order to understand the dynamic stress on the LD MOSFET and its effect on RF circuit, the hot-carrier injection experiment in which dynamic stress with different duty cycle applied to a LD MOS transistor is presented. A Class-C power amplifier is used to as an example to demonstrate the effect of dynamic stress on RF circuit performance. Finally, the strategy for improving hot carrier reliability and a forecast of the hot carrier reliability problem for nano-technologies are discussed. The main contribution of this work is, it systemically research the hot carrier reliability issue on the sub-micron lateral doped drain MOSFETs, which is induced by static and dynamic voltage stress; The stress condition mimics the typical application scenarios of LD MOSFET. Model parameters extraction technique is introduced with the aid of the current device modeling tools, the performance degradation model can be easily implement into the existing computer-aided tools. Therefore, circuit performance degradation can be accurately estimated in the design stage. CMOS technologies are constantly scaled down. The production on 65 nm is on the market. With the reduction in geometries, the devices become more vulnerable to hot carrier injection (HCI). HCI reliability is a must for designs implemented with new processes. Reliability simulation needs to be implemented in PDK libraries located on the modeling stage. The use of professional tools is a prerequisite to develop accurate device models, from DC to GHz, including noise modeling and nonlinear HF effects, within a reasonable time. Designers need to learn to design for reliability and they should be educated on additional reliability analyses. The value is the reduction of failure and redesign costs.
Ph.D.
School of Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering
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Le, Huy X. P. "On the methodology of assessing hot-carrier reliability of analog circuits." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/84212.

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Das, A. G. Man Mohan. "Effect of wearout processes on the critical timing parameters and reliability of CMOS bistable circuits." Thesis, Durham University, 1997. http://etheses.dur.ac.uk/4701/.

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The objective of the research presented in this thesis was to investigate the effects of wearout processes on the performance and reliability of CMOS bistable circuits. The main wearout process affecting reliability of submicron MOS devices was identified as hot-carrier stress (and the resulting degradation in circuit performance). The effect of hot-carrier degradation on the resolving time leading to metastability of the bistable circuits also have been investigated. Hot-carrier degradation was identified as a major reliability concern for CMOS bistable circuits designed using submicron technologies. The major hot-carrier effects are the impact ionisation of hot- carriers in the channel of a MOS device and the resulting substrate current and gate current generation. The substrate current has been used as the monitor for the hot-carrier stress and have developed a substrate current model based on existing models that have been extended to incorporate additional effects for submicron devices. The optimisation of the substrate current model led to the development of degradation and life-time models. These are presented in the thesis. A number of bistable circuits designed using 0.7 micron CMOS technology design rules were selected for the substrate current model analysis. The circuits were simulated using a set of optimised SPICE model parameters and the stress factors on each device was evaluated using the substrate current model implemented as a post processor to the SPICE simulation. Model parameters for each device in the bistable were degraded according to the stress experienced and simulated again to determine the degradation in characteristic timing parameters for a predetermined stress period. A comparative study of the effect of degradation on characteristic timing parameters for a number of latch circuits was carried out. The life-times of the bistables were determined using the life-time model. The bistable circuits were found to enter a metastable state under critical timing conditions. The effect of hot-carrier stress induced degradation on the metastable state operation of the bistables were analysed. Based on the analysis of the hot-carrier degradation effects on the latch circuits, techniques are suggested to reduce hot-carrier stress and to improve circuit life-time. Modifications for improving hot- carrier reliability were incorporated into all the bistable circuits which were re-simulated to determine the improvement in life-time and reliability of the circuits under hot-carrier stress. The improved circuits were degraded based on the new stress factors and the degradation effects on the critical timing parameters evaluated and these were compared with those before the modifications. The improvements in the life-time and the reliability of the selected bistable circuits were quantified. It has been demonstrated that the hot-carrier reliability for all the selected bistable circuits can be improved by design techniques to reduce the stress on identified critically stressed devices.
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Koeppel, Gaudenz Alesch. "Reliability considerations of future energy systems : multi-carrier systems and the effect of energy storage /." Zürich : ETH, 2007. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=17058.

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Книги з теми "CARRIER RELIABILITY"

1

Y, Tsui Paul G., ed. Hot-carrier circuit reliability simulation. Reading, Mass: Addison-Wesley, 1992.

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2

Leblebici, Yusuf, and Sung-Mo Kang. Hot-Carrier Reliability of MOS VLSI Circuits. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7.

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3

Leblebici, Yusuf. Hot-carrier reliability of MOS VLSI circuits. Boston: Kluwer Academic, 1993.

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4

Leblebici, Yusuf. Hot-Carrier Reliability of MOS VLSI Circuits. Boston, MA: Springer US, 1993.

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5

Utas, Greg. Robust communications software: Extreme availability, reliability and scalability for carrier-grade systems. Chichester: John Wiley & Sons, 2005.

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6

Ford-class carriers: Lead ship testing and reliability shortfalls will limit initial fleet capabilities : report to congressional requesters. [Washington, D.C.]: United States Government Accountability Office, 2013.

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7

Chhutiashvili, Lela. Environmental sustainability control system of economic entities. ru: INFRA-M Academic Publishing LLC., 2022. http://dx.doi.org/10.12737/1819036.

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The monograph is devoted to a comprehensive analysis of the environmental sustainability control system of economic entities, both internal (internal control services) and external (state supervision (control) and audit). Effective control of the environmental sustainability of economic entities carried out by audit organizations and internal control units in cooperation with state supervision (control) and audit of nature users is carried out in order to verify the compliance of the nature of their environmental activities, products and environmental management systems with current legislation, standards, rules, requirements in the field of environmental protection and to confirm the reliability of their reporting. Confirming the reliability of the reporting of economic entities, environmental supervisors are able to conduct an independent assessment of the environmental sustainability and effectiveness of the environmental activities of the audited organizations, issue their proposals and recommendations for making informed decisions by various stakeholders. The interaction of audit organizations with the internal control (audit) services of enterprises and state supervision (control) and audit bodies will contribute to the timely preparation of reliable accounting and consolidated financial statements by enterprises and increase the efficiency of their environmental activities. It is intended for researchers, students, postgraduates and undergraduates, entrepreneurs, managers and anyone interested in the problems of environmental sustainability control of economic entities.
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8

Bartoli, Gianni, Francesco Ricciardelli, and Vincenzo Sepe, eds. WINDERFUL Wind and INfrastructures. Florence: Firenze University Press, 2004. http://dx.doi.org/10.36253/8884531381.

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WINDERFUL (an acronym for Wind and INfrastructures: Dominating Eolian Risk For Utilities and Lifelines) is the title of a research project carried out by eight Italian Universities from the end of 2001 to the end of 2003. The project was centred on how "to keep a city running and ensuring quality services during and after major windstorms", avoiding "major failures" of engineering facilities and main infrastructures. The book reports the main results obtained in the project, and for each typology the tool for assessing its reliability are discussed, together with the criteria for its improvement.
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9

Leonovich, Sergey, Evgeniy Shalyy, Elena Polonina, Elena Sadovskaya, Lev Kim, and Valentin Dorkin. Durability of port reinforced concrete structures (Far East and Sakhalin). ru: INFRA-M Academic Publishing LLC., 2021. http://dx.doi.org/10.12737/1816638.

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Section I of the monograph is devoted to an urgent problem - forecasting the durability of port reinforced concrete structures, the destruction of which is associated with corrosion of steel reinforcement caused by chloride aggression and carbonation of concrete. The analysis of models for calculating the service life of structures and experimental data is carried out, the life cycles for the main degradation processes in concrete and reinforcement, the periods of initiation and propagation of corrosion are considered, the influence of environmental factors (temperature, humidity) and the quality of concrete (In/C, cement consumption, diffusion coefficient) on the kinetics of chloride penetration and the movement of the carbonation front is taken into account. Probabilistic models of basic variables are considered, the limiting states of port reinforced concrete structures for the durability of reinforced concrete structures based on the reliability coefficient for service life are formulated. Sections II and III describe modern methods of restoration and restoration of reinforced concrete port structures subjected to corrosion destruction using nanofibrobeton. The concept of multilevel reinforcement has been implemented. Methods of experimental fracture mechanics were used to evaluate the joint work of exploited concrete and reinforcement nanofibre concrete. It is intended for scientific and engineering staff of universities, research and design organizations.
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10

Office, General Accounting. Operation Desert Storm: Apache helicopter was considered effective in combat, but reliability problems persist : report to the Chairman, Subcommittee on Oversight and Investigations, Committee on Energy and Commerce, House of Representatives. Washington, D.C: U.S. General Accounting Office, 1992.

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Частини книг з теми "CARRIER RELIABILITY"

1

Leblebici, Yusuf, and Sung-Mo Kang. "Circuit Design for Reliability." In Hot-Carrier Reliability of MOS VLSI Circuits, 191–207. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_8.

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2

Ioannou, D. E. "Hot Carrier Reliability of SOI Structures." In Physical and Technical Problems of SOI Structures and Devices, 199–210. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0109-7_18.

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3

Scholten, A. J., B. De Vries, J. Bisschop, and G. T. Sasse. "Reliability Simulation Models for Hot Carrier Degradation." In Hot Carrier Degradation in Semiconductor Devices, 477–517. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-08994-2_16.

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4

Leblebici, Yusuf, and Sung-Mo Kang. "Transistor-Level Simulation for Circuit Reliability." In Hot-Carrier Reliability of MOS VLSI Circuits, 111–42. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_5.

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Leblebici, Yusuf, and Sung-Mo Kang. "Fast Timing Simulation for Circuit Reliability." In Hot-Carrier Reliability of MOS VLSI Circuits, 143–63. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_6.

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Leblebici, Yusuf, and Sung-Mo Kang. "Introduction." In Hot-Carrier Reliability of MOS VLSI Circuits, 1–13. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_1.

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Leblebici, Yusuf, and Sung-Mo Kang. "Oxide Degradation Mechanisms in MOS Transistors." In Hot-Carrier Reliability of MOS VLSI Circuits, 15–53. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_2.

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8

Leblebici, Yusuf, and Sung-Mo Kang. "Modeling of Degradation Mechanisms." In Hot-Carrier Reliability of MOS VLSI Circuits, 55–76. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_3.

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Leblebici, Yusuf, and Sung-Mo Kang. "Modeling of Damaged Mosfets." In Hot-Carrier Reliability of MOS VLSI Circuits, 77–109. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_4.

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Leblebici, Yusuf, and Sung-Mo Kang. "Macromodeling of Hot-Carrier Induced Degradation in Mos Circuits." In Hot-Carrier Reliability of MOS VLSI Circuits, 165–90. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3250-7_7.

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Тези доповідей конференцій з теми "CARRIER RELIABILITY"

1

Burnett, David, and Chenming Hu. "Hot-Carrier Reliability of Bipolar Transistors." In 28th International Reliability Physics Symposium. IEEE, 1990. http://dx.doi.org/10.1109/irps.1990.363517.

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2

Jiang, W., H. Le, J. Chung, T. Kopley, P. Marcoux, and C. Dai. "Assessing circuit-level hot-carrier reliability." In 1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual. IEEE, 1998. http://dx.doi.org/10.1109/relphy.1998.670509.

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3

Wu, Xiangjun, and Zongkai Yang. "Research on reliability of carrier ethernet." In Asia-Pacific Optical Communications, edited by Jianli Wang, Gee-Kung Chang, Yoshio Itaya, and Herwig Zech. SPIE, 2007. http://dx.doi.org/10.1117/12.745291.

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4

Hao, Jifa. "Hot carrier reliability in LDMOS devices." In 2017 IEEE 12th International Conference on ASIC (ASICON). IEEE, 2017. http://dx.doi.org/10.1109/asicon.2017.8252561.

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Park, Hokyung, Rino Choi, Seung Song, Man Chang, Chadwin Young, Gennadi Bersuker, Byoung Lee, Jack Lee, and Hyunsang Hwang. "Decoupling of cold carrier effects in hot carrier reliability of HfO2 gated nMOSFETs." In 2006 IEEE International Reliability Physics Symposium Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/relphy.2006.251217.

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Mittl, Steven W., and Michael J. Hargrove. "Hot Carrier Degradation in P-Channel MOSFETs." In 27th International Reliability Physics Symposium. IEEE, 1989. http://dx.doi.org/10.1109/irps.1989.363369.

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Tyaginov, S. E., A. Makarov, M. Jech, J. Franco, P. Sharma, B. Kaczer, and T. Grasser. "On the effect of interface traps on the carrier distribution function during hot-carrier degradation." In 2016 IEEE International Integrated Reliability Workshop (IIRW). IEEE, 2016. http://dx.doi.org/10.1109/iirw.2016.7904911.

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Chung, James E. "Key issues in evaluating hot-carrier reliability." In Microelectronic Manufacturing 1996, edited by Ih-Chin Chen, Nobuo Sasaki, Divyesh N. Patel, and Girish A. Dixit. SPIE, 1996. http://dx.doi.org/10.1117/12.250889.

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Chen, Zhan, and Israel Koren. "Technology mapping for hot-carrier reliability enhancement." In Microelectronic Manufacturing, edited by Ali Keshavarzi, Sharad Prasad, and Hans-Dieter Hartmann. SPIE, 1997. http://dx.doi.org/10.1117/12.284706.

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Aur, S. "Kinetics of Hot Carrier Effects for Circuit Simulation." In 27th International Reliability Physics Symposium. IEEE, 1989. http://dx.doi.org/10.1109/irps.1989.363367.

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Звіти організацій з теми "CARRIER RELIABILITY"

1

La Porte, Todd R., Karlene Roberts, and Gene I. Rochlin. Aircraft Carrier Operations at Sea: The Challenges of High Reliability Performance. Fort Belvoir, VA: Defense Technical Information Center, July 1988. http://dx.doi.org/10.21236/ada198692.

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2

Morrison, Robert James. SYS645 Design for Reliability Maintainability and Supportability: H12 Universal Cartridge Carrier (circa 1952). Office of Scientific and Technical Information (OSTI), January 2020. http://dx.doi.org/10.2172/1592836.

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3

Matulionis, Arvydas, H. Morkoc, U. Ozgur, J. Xie, J. H. Leach, M. Wu, X. Ni, J. Lee, X. Li, and R. Katilius. Limitation of Hot-Carrier Generated Heat Dissipation on the Frequency of Operation and Reliability of Novel Nitride-Based High-Speed HFETs. Fort Belvoir, VA: Defense Technical Information Center, July 2010. http://dx.doi.org/10.21236/ada542888.

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4

Nessim and Zhou. L51998 Current Status and Future Development Needs of Limit States Designs for Onshore Pipelines. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), September 2003. http://dx.doi.org/10.55274/r0011219.

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Анотація:
Reliability Based Design and Assessment (RBDA) methods for pipelines have some key benefits, including: consideration of the true structure behavior; achievement of consistent safety levels for all pipelines; optimal decisions that achieve better safety without increasing costs; adaptability to new technologies and unique loading situations; and integration of design and operational decisions. Although a considerable amount of research has been carried out towards the development of RBDA methods for the onshore pipelines, there are several technology gaps that limit the application of such methods. These include lack of a standardized process to estimate reliability and industry-accepted reliability targets. They also include lack of familiarity of the industry and regulators with the approach. These gaps need to be filled through a research effort to create guidelines for applying reliability-based design and assessment methods and develop appropriate reliability targets that can be used to evaluate the results; and a communication effort to familiarize the industry with the approach and facilitate its incorporation into codes of practice.
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5

Chen, Qishi, Joe Zhou, Duane DeGeer, Ola Bjornoy, and Richard Verley. JTM13-CCP Collapse of Corroded Pipelines. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), April 2001. http://dx.doi.org/10.55274/r0011820.

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This paper presents preliminary numerical and experimental results obtained in an attempt to develop practical, reliability-based local buckling and collapse criteria for onshore and offshore pipelines that have experienced some form of metal-loss corrosion. The project was carried out in three phases involving finite element analysis, large-scale testing, and development of design criteria using reliability methodology. This paper summarizes the first two phases of this project including a characterization of corrosion defects, an assessment of the sensitivity of corrosion features based on finite element predictions, and test results of full-scale line pipe specimens.
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6

SOLOVYANENKO, N. I. CROSS-BORDER BUSINESS OPERATIONS IN DIGITAL ECOSYSTEMS OF THE EAEU: LEGAL ISSUES. DOI CODE, 2021. http://dx.doi.org/10.18411/0131-5226-2021-70003.

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Cross-border business operations in the digital ecosystems of the EAEU are carried out using electronic document management and the legal structure of the cross-border space of trust. Within the framework of the cross-border trust space, the legal structure of a trusted third party is used, which identifies participants in the electronic document flow; signs an electronic document with an electronic signature and verifies it; registers the date and time of sending and receiving an electronic document; and stores electronic documents. Special legal constructions are used to ensure the reliability of electronic document management.
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Neuert, Mark, and Smitha Koduru. PR-244-173856-R01 In-line Inspection Crack Tool Reliability and Performance Evaluation. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), June 2019. http://dx.doi.org/10.55274/r0011599.

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The ability for operators to make operational and maintenance decisions based on in-line inspection (ILI) data depends on the performance of ILI tools with respect to sizing and detection of crack and stress corrosion cracking (SCC) features. A series of previous Pipeline Research Council International, Inc. (PRCI) projects created a database of ILI tool and pipe excavation data that can be used to evaluate the detection and sizing capabilities of ultrasonic (UT) (NDE-4-E Phase 1, PR-244-133731) and electromagnetic acoustic (EMAT) (NDE-4-E Phase 2, PR-244-153719) ILI technologies. This current project, NDE-4-7 (PR-244-173856), was carried out by C-FER Technologies (1999) Inc. (C-FER) for PRCI. It is Phase 3 of an ongoing industry-wide effort to understand and characterize ILI tool performance. In addition to adding a new data set to the database developed in Phases 1 and 2, estimates of ILI tool performance with respect to rate of detection (ROD), probability of identification (POI), false discovery rate (FDR), and sizing accuracy (SA) were calculated. Two further analyses were performed, namely an investigation of the effect of crack profile data on tool performance and burst pressure estimation, and an evaluation of the reduction in sizing uncertainty attained through multiple measurements of crack features. This document has a related webinar.
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Nikolova, Nikolina, Pencho Mihnev, Temenuzhka Zafirova-Malcheva, Ralitza Stamenkova, Stanislav Ivanov, Donatella Persico, Marcello Passarelli, Francesca Pozzi, and Erica Volta. Intellectual Output 4: Evaluation kit for inclusion-oriented collaborative learning activities. PLEIADE Project, July 2023. http://dx.doi.org/10.60063/nn.2023.0089.95.

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This document is intended as a text file annexed to IO4 and is distributed as an accompanying document to the PEIADE Evaluation kit, which can be reached online on the PLEIADE website: https://moodle.pleiade-project.eu/. The main purpose of this text file is to document in detail the process of the Evaluation kit development, the intermediate and supporting products, and to provide scientific reasoning of its validity and reliability. The document describes the main activities carried out during the Evaluation kit development and the responsibilities taken by the partners. It provides a description of the developed Evaluation kit and use-cases, supporting its usage by external users in their attempts to develop and enact inclusive collaborative learning designs.
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Skow. PR-244-093703-R01 Uncertainties of In-line Inspection Crack Detection Tools Phases 1-2. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), October 2014. http://dx.doi.org/10.55274/r0010828.

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This project was carried� to develop better approaches to deal with in line crack inspection tool uncertainty. The primary objectives of the project were as follows: To develop practical and defendable methodologies to quantify the de facto tool accuracy for a specific pipeline, taking into account the limitations associated with field excavation programs.� To develop methodologies that can be used to incorporate the above mentioned tool characterizations into the crack management process. The objectives were addressed in two parts: first by estimating the number of defects in the pipeline, and second by estimating the reliability of the pipeline given the defect count and size distributions. Sections 2 and 3 of this report detail the models used to estimate the number and size of defects in the pipeline. Section 4 details the reliability models used as a basis for crack management. API Standard 1163 titled �In line Inspection System Qualification Standards� provides performance based requirements for in line inspection (ILI) systems, including procedures, personnel and equipment. The standard provides a starting point and terminology for discussions on in line tool performance and is referred to throughout this report. In line tool accuracy is defined in API 1163 in terms of probability of detection (POD), probability of identification (POI), probability of false call (POFC) and sizing accuracy. Models for each of these performance measures is developed and exercised using four operator ILI and excavation data sets for stress corrosion cracking (SCC) defects. The model results are then applied to a crack management process that utilizes pipeline reliability as a basis for decision making. An overview of the models developed for POD, POI, POFC and sizing, as well as key results from the crack management process, is presented.
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Xie, Gao, and Olsen. PR-179-13601-R01 CFD Analysis of the Heat Transfer Characteristics and the Effect of Thermowells. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), October 2013. http://dx.doi.org/10.55274/r0010818.

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Thermowells are widely utilized for temperature measurement in metering stations on natural gas pipelines. The use of thermowells induces errors in the measurements of gas temperature due to the heat transfer processes involved in the thermowell installations, which results in errors in the flow rate calculations. In order to study the temperature measurement accuracy of using thermowells, a three-dimensional computational fluid dynamics study is performed and an in-depth investigation of the effect of the multiple variables on gas temperature measurement is carried out. The parameters under investigation include pipe diameter, thermowell type, thermal conditions at the pipe wall surface, and gas velocity. The study provides information on the sources of error and guidance to users on thermowell type selection and the pipe-thermowell installation, in order to improve the reliability and accuracy of gas temperature measurement.
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