Готові списки джерел за темами / Buckled Thin Film Transistor

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Автор: Grafiati
Опубліковано: 6 вересня 2023

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Статті в журналах з теми "Buckled Thin Film Transistor"

1

Cantarella, Giuseppe, Christian Vogt, Raoul Hopf, Niko Münzenrieder, Panagiotis Andrianakis, Luisa Petti, Alwin Daus, et al. "Buckled Thin-Film Transistors and Circuits on Soft Elastomers for Stretchable Electronics." ACS Applied Materials & Interfaces 9, no. 34 (August 21, 2017): 28750–57. http://dx.doi.org/10.1021/acsami.7b08153.

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2

Aoyama, Takashi, Genshiro Kawachi, Yasuhiro Mochizuki, and Takaya Suzuki. "Effect of Ion Doping Process on Thin-Film Transistor Characteristics Using a Bucket-Type Ion Source and XeCl Excimer Laser Annealing." Japanese Journal of Applied Physics 31, Part 1, No. 4 (April 15, 1992): 1012–15. http://dx.doi.org/10.1143/jjap.31.1012.

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3

Horng. "Thin Film Transistor." Crystals 9, no. 8 (August 9, 2019): 415. http://dx.doi.org/10.3390/cryst9080415.

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Анотація:
The special issue is "Thin Film Transistor". There are eight contributed papers. They focus on organic thin film transistors, fluorinated oligothiophenes transistors, surface treated or hydrogen effect on oxide-semiconductor-based thin film transistors, and their corresponding application in flat panel displays and optical detecting. The present special issue on “Thin Film Transistor” can be considered as a status report reviewing the progress that has been made recently on thin film transistor technology. These papers can provide the readers with more research information and corresponding application potential about Thin Film Transistors.
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4

Choi, Kwangsoo, and Masakiyo Matsumura. "Semi-Insulating Polysilicon Thin-Film Transistor: A Proposed Thin-Film Transistor." Japanese Journal of Applied Physics 34, Part 1, No. 7A (July 15, 1995): 3497–99. http://dx.doi.org/10.1143/jjap.34.3497.

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5

YASE, Kiyoshi. "Organic Thin Film Transistor." Kobunshi 53, no. 2 (2004): 85–88. http://dx.doi.org/10.1295/kobunshi.53.85.

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6

IÑIGUEZ, BENJAMIN, TOR A. FJELDLY, and MICHAEL S. SHUR. "THIN-FILM TRANSISTOR MODELING." International Journal of High Speed Electronics and Systems 09, no. 03 (September 1998): 703–23. http://dx.doi.org/10.1142/s0129156498000300.

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Анотація:
We review recent physics-based, analytical DC models for amorphous silicon (a-Si), polysilicon (poly-Si), and organic thin film transistors (TFTs), developed for the design of novel ultra high-resolution, large area displays using advanced short-channel TFTs. In particular, we emphasize the modeling issues related to the main short-channel effects, such as self-heating (a-Si TFTs) and kink effect (a-Si and poly-Si TFTs), which are present in modern TFTs. The models have been proved to accurately reproduce the DC characteristics of a-Si:H with gate lengths down to 4 μm and poly-Si TFTs with gate lengths down to 2 μm. Because the scalability of the models and the use of continuous expressions for describing the characteristics in all operating regimes, the models are suitable for implementation in circuit simulators such as SPICE.
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7

Pavelko, Vitalijs. "Behavior of Thin-Film-Type Delamination of Layered Composite in Post-Buckling." Advanced Materials Research 774-776 (September 2013): 1312–21. http://dx.doi.org/10.4028/www.scientific.net/amr.774-776.1312.

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A revision of the basic assumptions those are usually used in the analysis of stability of thin delaminated layer and delamination propagation in a compressed composite is presented in this paper. For this purpose, the theory of flexible elastic plates with large displacements was used. As a result the compressive force and the total longitudinal strain of sub-laminate are expressed in terms of complete elliptic integrals, which uniquely identify the buckled shape of sub-laminate, the effect of buckling on the compression strain and increment of the compressive force in the buckled state. Stress and strain, as well as the strength of the buckled sub-laminate in the dangerous cross-section were also analyzed. The results of the general analysis of delamination propagation and its compression-bending destruction in the buckled state allow to define the basic regularities of the damage behavior of compressed layered composite.
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Oh, Teresa. "Low Power Thin Film Transistor." Science of Advanced Materials 9, no. 11 (November 1, 2017): 2013–18. http://dx.doi.org/10.1166/sam.2017.3204.

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Lifshitz, N., S. Luryi, M. R. Pinto, and C. S. Rafferty. "Active-gate thin-film transistor." IEEE Electron Device Letters 14, no. 8 (August 1993): 394–95. http://dx.doi.org/10.1109/55.225590.

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Nomura, Kenji, Toshio Kamiya, and Hideo Hosono. "Ambipolar Oxide Thin-Film Transistor." Advanced Materials 23, no. 30 (July 1, 2011): 3431–34. http://dx.doi.org/10.1002/adma.201101410.

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Дисертації з теми "Buckled Thin Film Transistor"

1

Lee, Hyun Ho. "A thin film transistor driven microchannel device." Texas A&M University, 2004. http://hdl.handle.net/1969.1/1439.

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Анотація:
Novel electrophoresis devices for protein and DNA separation and identification have been presented and studied. The new device utilizes a contact resistance change detection method to identify protein and DNA in situ. The devices were prepared with a microelectronic micromechanical system (MEMS) fabrication method. Three model proteins and six DNA fragments were separated by polyacrylamide gel microchannel electrophoresis and surface electrophoresis. The detection of the proteins or DNA fragments was accomplished using the contact resistance increase of the detection electrode due to adsorption of the separated biomolecules. Key factors for the success of these devices were the optimization of fabrication process and the enhancement of detection efficiency of the devices. Parameters, such as microchannel configuration, size of electrode, and affinity of protein or polyacrylamide gel to the microchannel sidewall and bottom surface were explored in detail. For DNA analysis, the affinity to the bottom surface of the channel was critical. The surface modification method was used to enhance the efficiency of the microchannel surface electrophoresis device. The adsorption of channel separated protein and DNA on the detection electrode was confirmed with the electron spectroscopy for chemical analysis (ESCA) method. The electrical current (I) from the protein microchannel electrophoresis was usually noisy and fluctuated at the early stage of the electrophoresis process. In order to remove the current perturbation, an amorphous silicon (a-Si:H) thin film transistor (TFT) was connected to the microchannel device. The self-aligned a-Si:H TFT was fabricated with a two-photomask process. The result shows that the attachment of the TFT successfully suppressed the current fluctuation of the microchannel electrophoresis process. In summary, protein and DNA samples were effectively separated and detected with the novel TFT-driven or surface microchannel electrophoresis device.
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2

Bu, Ian Yi-Yu. "Plasma nitrogenation for thin film transistor applications." Thesis, University of Cambridge, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.615998.

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3

Aschenbeck, Jens. "Novel amorphous silicon thin film transistor structures." Thesis, University of Cambridge, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.620172.

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4

Islam, Mujahid-ul. "Polysilicon thin film transistor systems and circuits." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613019.

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5

Nominanda, Helinda. "Amorphous silicon thin film transistor as nonvolatile device." Texas A&M University, 2008. http://hdl.handle.net/1969.1/86004.

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Анотація:
n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs with molybdenum electrodes. The reliability was examined by extended high-temperature annealing and gate-bias stress. High-performance CMOS-type a-Si:H TFTs can be fabricated with this plasma etching method. Electrical characteristics of a-Si:H TFTs after Co-60 irradiation and at different experimental stages have been measured. The gamma-ray irradiation damaged bulk films and interfaces and caused the shift of the transfer characteristics to the positive voltage direction. The field effect mobility, on/off current ratio, and interface state density of the TFTs were deteriorated by the irradiation process. Thermal annealing almost restored the original state's characteristics. Floating gate n-channel a-Si:H TFT nonvolatile memory device with a thin a- Si:H layer embedded in the SiNx gate dielectric layer has been prepared and studied. The hysteresis of the TFT's transfer characteristics has been used to demonstrate its memory function. A steady threshold voltage change between the "0" and "1" states and a large charge retention time of > 3600 s with the "write" and "erase" gap of 0.5 V have been detected. Charge storage is related to properties of the embedded a-Si:H layer and its interfaces in the gate dielectric structure. Discharge efficiencies with various methods, i.e., thermal annealing, negative gate bias, and light exposure, separately, were investigated. The charge storage and discharge efficiency decrease with the increase of the drain voltage under a dynamic operation condition. Optimum operating temperatures are low temperature for storage and higher temperature for discharge. a-Si:H metal insulator semiconductor (MIS) capacitor with a thin a-Si:H film embedded in the silicon nitride gate dielectric stack has been characterized for memory functions. The hysteresis of the capacitor's current-voltage and capacitance-voltage curves showed strong charge trapping and detrapping phenomena. The 9 nm embedded a-Si:H layer had a charge storage capacity six times that of the capacitor without the embedded layer. The nonvolatile memory device has potential for low temperature circuit applications.
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Xiong, Zhibin. "Novel scaled-down poly-Si thin-film transistor devices and technologies /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20XIONG.

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Vorona, Mikhail. "Anthracene-Based Molecules for Organic Thin-Film Transistor Integration." Thesis, Université d'Ottawa / University of Ottawa, 2020. http://hdl.handle.net/10393/41536.

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Анотація:
Organic electronics are devices based on semiconductors derived from carbon based molecules and polymers. These devices can be made flexible, lightweight and potentially inexpensive with the development of economies of scale. Specific examples of organic electronics include organic thin-film transistors (OTFTs), organic light-emitting diodes (OLEDs) and organic photovoltaic (OPVs). Anthracene-based semiconductors are materials that have generated great interest primarily because of their structural planarity, potential for strong intermolecular interactions, air stability and ideal frontier molecular orbital energy levels. In this thesis, we detail two publications that examined functionalized anthracene molecules integrated into OTFTs, along with their thermal, electrochemical and optical properties. We started by examining seven novel 9,10-anthracene-based molecules. It was found that functionalization of the 9,10-positions with different phenyl derivatives resulted in negligible variation in the optical properties with minor (±0.10 eV) changes in electrochemical behaviour, while the choice of phenyl derivative greatly affected the thermal stability whereby the decomposition temperatures (Td) varied by as much as 128 °C between certain functionalized derivatives. The findings suggested that functionalization of the 9,10-position of anthracene leads to an effective handle for tuning of the thermal stability while having little to no effect on the optical properties and the solid-state arrangement. We continued with the synthesis of several novel anthracene derivatives which were di-substituted at the 2,6-positions. It was found that 2,6-functionalization with various fluorinated phenyl derivatives led to negligible changes in the optical behaviour while influencing the electrochemical properties (±0.10 eV). Furthermore, the choice of fluorinated phenyl moiety had noticeable effects on melting point and thermal stability (ΔTm < 55 °C and ΔTd < 65 °C). OTFTs were fabricated and characterized using the 2,6-anthracene derivatives as the semiconducting layer. The addition of fluorine groups on the phenyl groups led to a transition from p-type behaviour to n-type behaviour in BGBC OTFTs. The results indicated that the choice of functional group as well as its functionalization location, at the 9,10- and 2,6-positions, can act as powerful handles to engineer high performance OTFTs.
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Chow, Thomas. "A conduction model for intrinsic polycrystalline silicon thin film transistor based on discrete grains /." View abstract or full-text, 2009. http://library.ust.hk/cgi/db/thesis.pl?ECED%202009%20CHOW.

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Hein, Moritz. "Organic Thin-Film Transistors." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-167894.

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Анотація:
Organic thin film transistors (OTFT) are a key active devices of future organic electronic circuits. The biggest advantages of organic electronics are the potential for cheep production and the enabling of new applications for light, bendable or transparent devices. These benefits are offered by a wide spectrum of various molecules and polymers that are optimized for different purpose. In this work, several interesting organic semiconductors are compared as well as transistor geometries and processing steps. In a cooperation with an industrial partner, test series of transistors are produced that are intensively characterized and used as a basis for later device simulation. Therefore, among others 4-point-probe measurements are used for a potential mapping of the transistor channel and via transfer line method the contact resistance is measured in a temperature range between 173 and 353 K. From later comparison with the simulation models, it appears that the geometrical resistance is actually more important for the transistor performance than the resistance of charge-carrier injection at the electrodes. The charge-carrier mobility is detailed evaluated and discussed. Within the observed temperature range a Arrhenius-like thermal activation of the charge- carrier transport is determined with an activation energy of 170 meV. Furthermore, a dependence of the electric field-strength of a Poole-Frenkel type is found with a Poole-Frenkel factor of about 4.9 × 10E−4 (V/m) −0.5 that is especially important for transistors with small channel length. With these two considerations, already a good agreement between device simulation and measurement data is reached. In a detailed discussion of the dependence on the charge-carrier density and from comparison with established the charge-carrier mobility models, an exponential density of states could be estimated for the organic semiconductor. However, reliability of OTFTs remains one of the most challenging hurdles to be understood and resolved for broad commercial applications. In particular, bias-stress is identified as the key instability under operation for numerous OTFT devices and interfaces. In this work, a novel approach is presented that allows controlling and significantly alleviating the bias-stress effect by using molecular doping at low concentrations. For pentacene as semiconductor and SiO2 as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias-stress is explained in terms of the shift of Fermi level and, thus, exponentially reduced proton generation at the pentacene/oxide interface. For transistors prepared in cooperation with the industrial partner, a second effect is observed that can be explained by a model considering a ferroelectric process in the dielectric and counteracts the bias-stress behavior.
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Herlogsson, Lars. "Electrolyte-Gated Organic Thin-Film Transistors." Doctoral thesis, Linköpings universitet, Institutionen för teknik och naturvetenskap, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-69636.

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Анотація:
There has been a remarkable progress in the development of organic electronic materials since the discovery of conducting polymers more than three decades ago. Many of these materials can be processed from solution, in the form as inks. This allows for using traditional high-volume printing techniques for manufacturing of organic electronic devices on various flexible surfaces at low cost. Many of the envisioned applications will use printed batteries, organic solar cells or electromagnetic coupling for powering. This requires that the included devices are power efficient and can operate at low voltages. This thesis is focused on organic thin-film transistors that employ electrolytes as gate insulators. The high capacitance of the electrolyte layers allows the transistors to operate at very low voltages, at only 1 V. Polyanion-gated p-channel transistors and polycation-gated n-channel transistors are demonstrated. The mobile ions in the respective polyelectrolyte are attracted towards the gate electrode during transistor operation, while the polymer ions create a stable interface with the charged semiconductor channel. This suppresses electrochemical doping of the semiconductor bulk, which enables the transistors to fully operate in the field-effect mode. As a result, the transistors display relatively fast switching (≤ 100 µs). Interestingly, the switching speed of the transistors saturates as the channel length is reduced. This deviation from the downscaling rule is explained by that the ionic relaxation in the electrolyte limits the channel formation rather than the electronic transport in the semiconductor. Moreover, both unipolar and complementary integrated circuits based on polyelectrolyte-gated transistors are demonstrated. The complementary circuits operate at supply voltages down to 0.2 V, have a static power consumption of less than 2.5 nW per gate and display signal propagation delays down to 0.26 ms per stage. Hence, polyelectrolyte-gated circuits hold great promise for printed electronics applications driven by low-voltage and low-capacity power sources.
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Книги з теми "Buckled Thin Film Transistor"

1

Symposium, on Thin Film Transistor Technologies (8th 2006 Cancun Mexico). Thin film transistor technology 8. Pennington, NJ: Electrochemical Society, 2006.

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2

Li, Flora M., Arokia Nathan, Yiliang Wu, and Beng S. Ong. Organic Thin Film Transistor Integration. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527634446.

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3

Symposium on Thin Film Transistor Technologies (4th 1998 Boston, Massachusetts). Thin film transistor technologies: Proceedings of the Fourth Symposium on Thin Film Transistor Technologies. Edited by Kuo Yue, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Electronics Division. Pennington, New Jersey: Electrochemical Society, 1999.

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4

Symposium, on Thin Film Transistor Technologies (2nd 1994 Miami Beach Fla ). Proceedings of the Second Symposium on Thin Film Transistor Technologies. Pennington, NJ: Electrochemical Society, 1995.

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5

Symposium, on Thin Film Transistor Technologies (5th 2000 Phoenix Ariz ). Thin film transistor technologies V: Proceedings of the international symposium. Pennington, NJ: Electrochemical Society, 2001.

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6

Yue, Kuo, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Electronics Division, eds. Proceedings of the Third Symposium on Thin Film Transistor Technologies. Pennington, NJ: Electrochemical Society, 1997.

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7

Symposium on Thin Film Transistor Technologies (1st 1992 Toronto, Ont.). Proceedings of the First Symposium on Thin Film Transistor Technologies. Pennington, NJ: Electrochemical Society, 1992.

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8

Hakumaku toranjisuta gijutsu no subete: Kōzō, tokusei, seizō purosesu kara jisedai TFT made = Thin film transistor. Tōkyō: Kōgyō Chōsakai, 2007.

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9

A, Chiang, Geis M. W, and Pfeiffer L, eds. Semiconductor-on-insulator and thin film transistor technology: Symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A. Pittsburgh, Pa: Materials Research Society, 1986.

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10

T, Voutsas Apostolos, IS & T--the Society for Imaging Science and Technology., and Society of Photo-optical Instrumentation Engineers., eds. Poly-silicon thin film transistor technology and applications in displays and other novel technology areas: 21-22 January, 2003, Santa Clara, California, USA. Bellingham, Wash: SPIE, 2003.

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Частини книг з теми "Buckled Thin Film Transistor"

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Seok, Seonho. "Buckled Thin Film Cap Transfer Packaging Technology." In Springer Series in Advanced Manufacturing, 67–81. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-77872-3_4.

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Shimoda, Tatsuya. "Thin-Film Oxide Transistor by Liquid Process (1): FGT (Ferroelectric Gate Thin-Film Transistor)." In Nanoliquid Processes for Electronic Devices, 417–39. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-2953-1_16.

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Wong, William S., Jürgen H. Daniel, Michael L. Chabinyc, Ana Claudia Arias, Steven E. Ready, and René Lujan. "Thin-film Transistor Fabrication by Digital Lithography." In Organic Electronics, 271–93. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2006. http://dx.doi.org/10.1002/3527608753.ch11.

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4

Hafdi, Zoubeida. "Hydrogenated Amorphous Silicon Thin-Film Transistor: A DC Analysis." In Amorphous Silicon Thin-Film Transistors, 39–65. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-24793-4_4.

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Hafdi, Zoubeida. "Hydrogenated Amorphous Silicon Thin-Film Transistor: A Dynamic Analysis." In Amorphous Silicon Thin-Film Transistors, 79–96. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-24793-4_6.

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Wu, W. B., K. C. Cheng, and Hsin Hung Li. "Photolithography for Thin-Film-Transistor Liquid Crystal Displays." In Handbook of Visual Display Technology, 1305–29. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-14346-0_58.

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Wu, W. B., K. C. Cheng, and Hsin Hung Li. "Photolithography for Thin-Film-Transistor Liquid Crystal Displays." In Handbook of Visual Display Technology, 1–20. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-642-35947-7_58-2.

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8

Wöllenstein, J., M. Jägle, and H. Böttner. "A Gas Sensitive Tin Oxide Thin-Film Transistor." In Advanced Gas Sensing - The Electroadsorptive Effect and Related Techniques, 85–99. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4419-8612-2_4.

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Lin, Wen-yi, W. B. Wu, K. C. Cheng, and Hsin Hung Li. "Photolithography for Thin-Film-Transistor Liquid Crystal Displays." In Handbook of Visual Display Technology, 835–59. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-540-79567-4_58.

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Sharma, Prachi, and Navneet Gupta. "Electronic Behavior of Nanocrystalline Silicon Thin Film Transistor." In Advanced Structured Materials, 209–33. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-6214-8_8.

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Тези доповідей конференцій з теми "Buckled Thin Film Transistor"

1

Sambandan, Sanjiv. "Thin film transistors with buckled gate." In 2011 International Semiconductor Device Research Symposium (ISDRS). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135214.

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2

Nair, Aswathi R., Venu Anand, and Sanjiv Sambandan. "Bias stress induced threshold voltage shift in buckled thin film transistors." In TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON). IEEE, 2019. http://dx.doi.org/10.1109/tencon.2019.8929275.

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3

Cantarella, Giuseppe, Federica Catania, Niko Munzenrieder, and Luisa Petti. "Flexible, Scalable and Buckled Electronics based on Oxide Thin-Film Transistors." In 2022 IEEE International Flexible Electronics Technology Conference (IFETC). IEEE, 2022. http://dx.doi.org/10.1109/ifetc53656.2022.9948509.

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4

Hall, Harris J., Bradley D. Davidson, Steven M. George, and Victor M. Bright. "ALD Enabled Nickel MEMS Switches for Digital Logic." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-63763.

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Анотація:
CMOS transistor based digital logic technology has delivered spectacular levels of device integration and processing capability since its advent. However, traditional CMOS device performance remains limited in harsh environments, such as high temperature or irradiated environments. Electrostatically actuated MEMS/NEMS switches offer improved performance in these environments. In this work, out-of-plane three terminal microswitches suitable for digital logic are presented. Each switch consists of a suspended fixed-fixed bowtie shaped electroplated nickel beam (300μm × 250μm × ∼2μm) buckled out-of-plane over a 10μm wide gold electrode on a LPCVD nitride coated low resistance Si substrate, which acts as a common gate electrode. Atomic layer deposited (ALD) alumina (100nm thick) is incorporated as a sacrificial layer to keep the fabrication processing low temperature and provide precise gap uniformity across chip. Steady-state I-V performance results are presented showing contact voltages between 17–36V. Mechanical modeling of the beam deformation is performed using commercial FEA software and compared to the actual measured beam response. These devices offer a valid approach for simple MEMS based logic circuitry with proper film stress management and geometry scaling.
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Sun, Jie, Devin Mourey, Dalong Zhao, Sungkyu Park, Shelby F. Nelson, David H. Levy, Diane Freeman, Peter Cowdery-Corvan, Lee Tutt, and Thomas N. Jackson. "Fast ZnO Thin-Film Transistor Circuits." In 2007 65th Annual Device Research Conference. IEEE, 2007. http://dx.doi.org/10.1109/drc.2007.4373631.

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Jing, Yumei, Ruhua Ye, Zhiming Li, and Jusheng Li. "Characteristics of CdSe thin film transistor." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408442.

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Wei, J., C. W. Lee, and L. J. Li. "Carbon nanotube thin film transistor devices." In 2010 International Workshop on Junction Technology (IWJT). IEEE, 2010. http://dx.doi.org/10.1109/iwjt.2010.5474971.

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Fruehauf, Norbert. "Low Temperature Thin Film Transistor Technologies." In 2007 15th International Conference on Advanced Thermal Processing of Semiconductors. IEEE, 2007. http://dx.doi.org/10.1109/rtp.2007.4383807.

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Kuo, Yue. "Progress of Thin Film Transistor Technology." In 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2018. http://dx.doi.org/10.1109/icsict.2018.8565738.

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Hattori, Reiji. "Organic Thin-Film Transistor from Solution-Processed Precursor Film." In 2007 Conference on Lasers and Electro-Optics - Pacific Rim. IEEE, 2007. http://dx.doi.org/10.1109/cleopr.2007.4391507.

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