Готові списки джерел за темами / BONDPAD

Добірка наукової літератури з теми "BONDPAD"

Автор: Grafiati
Опубліковано: 11 вересня 2023

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Статті в журналах з теми "BONDPAD"

1

CHEN, H. Y., Z. Q. MO, L. H. AN, and Y. N. HUA. "APPLICATION OF AUGER ELECTRON SPECTROSCOPY AND X-RAY PHOTOELECTRON SPECTROSCOPY ANALYSIS IN FAILURE ANALYSIS OF WAFER FABRICATION." Surface Review and Letters 08, no. 05 (October 2001): 435–39. http://dx.doi.org/10.1142/s0218625x01001191.

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In this study, field emission AES and small-area XPS techniques were used to analyze surface composition and depth profiles on discolored bondpads to identify possible root causes for nonstick failure. In wafer fabrication, the discolored bondpad problem was found in the fab process with hot Al alloy metallization, which had resulted in nonstick failure during the assembly bonding process. Analytical results indicated that discolored bondpads with nonstick failure might be due to TiN residue introduced during the bondpad opening etching process. The possible root cause of TiN residue on bondpads was then confirmed to be arisen from ARC (TiN) layer underetched during the bondpad opening etching process. The solution to eliminate TiN residue on bondpads was taken to increase the etch time at the bondpad opening fab process.
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2

Retnasamy, Vithyacharan, Zaliman Sauli, Nabilah Fathiah Abd Ghani, Hussin Kamarudin, Norhawati Ahmad, Aaron Koay Terr Yeow, and Wan Mokhdzani Wan Norhaimi. "Thermal Stress Comparison on Copper and Gold Wire Bonded on Aluminium Bondpad." Advanced Materials Research 1082 (December 2014): 323–26. http://dx.doi.org/10.4028/www.scientific.net/amr.1082.323.

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This paper reports on the thermal stress comparison between gold (Au) and copper (Cu) wires in wire bonding. The objective of this study is to examine the stress induced during different operating temperatures. ANSYS 11 has been deployed as the simulation tool for this study. This simulation was performed using a three dimensional (3D) non-linear finite element model. The gold and copper wires were attached to an aluminium bondpad on a silicon die. The results showed that when the highest stress concentrates at the area between the ball bond and the bondpad. Moreover, increasing temperature will increase the von mises stress. As for this study, the Cu wire display the greater thermal stress compared to Au wire due to its harder and stiffer material properties.
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3

Cher Ming Tan and Zhenghao Gan. "Failure mechanisms of aluminum bondpad peeling during thermosonic bonding." IEEE Transactions on Device and Materials Reliability 3, no. 2 (June 2003): 44–50. http://dx.doi.org/10.1109/tdmr.2003.814408.

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4

Garidel, Sophie, Jean-Pierre Vilcot, Mohammed Zaknoune, and Pascal Tilmant. "Versatile bondpad report process for non-planar compound semiconductor devices." Microelectronic Engineering 71, no. 3-4 (May 2004): 358–62. http://dx.doi.org/10.1016/j.mee.2004.03.082.

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5

Baggerman, A. F. J., and F. J. H. Kessels. "Cracking Behaviour during Au‐Au TAB Inner Lead Bonding." Microelectronics International 10, no. 2 (February 1, 1993): 15–19. http://dx.doi.org/10.1108/eb044496.

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Tape automated bonding (TAB) is an interconnection technique for integrated circuits (ICs) with a small lead pitch and a thin assembly thickness. During inner lead bonding the flying (Au plated Cu) leads of the TAB foil are connected to the Au bumps on the bondpads of an IC. The Au bumps are deposited in the openings of a thick Novolac based resist layer by electroplating. The resist is coated on a sputtered TiW‐Au metallisation; TiW is the barrier layer between Au bump and Al bondpad. Bonding of the leads to the Au bumps requires substantial plastic deformation of the bump and lead. As a result of this deformation, the TiW barrier layer underneath the bump may crack easily. A theoretical model has been used to describe the occurrence of these cracks. This theoretical model is compared with experimental results of deformation and cracking behaviour by visual inspection of the TiW barrier and the etched cross‐sections. Separate (single point) and simultaneous (gang) bonding techniques, different gold plating baths and TAB tapes are used to study the cracking behaviour.
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6

Ulliac, Gwenn, Sophie Garidel, Jean-Pierre Vilcot, and Pascal Tilmant. "Air-bridge interconnection and bondpad process for non-planar compound semiconductor devices." Microelectronic Engineering 81, no. 1 (July 2005): 53–58. http://dx.doi.org/10.1016/j.mee.2005.02.006.

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7

Retnasamy, Vithyacharan, Zaliman Sauli, Moganraj Palianysamy, Steven Taniselass, Phaklen Ehkan, and Fairul Afzal Ahmad Fuad. "Wettability Study Using O2 and Ar RIE Gas Treatment on Aluminium Surface." Advanced Materials Research 896 (February 2014): 233–36. http://dx.doi.org/10.4028/www.scientific.net/amr.896.233.

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Wettability is one of the most important aspects in microfluid technology. The effect of surface roughness on the wettability by a liquid has been studied experimentally using Design of Experiment(DOE). Sixteen samples were etched using Reactive Ion Etching (RIE) technique with different combination of parameters. RIE parameters concerned in this experiment are ratio of Oxygen, Argon, ICP power and BIAS power. Reactive Ion Etching influences surface morphology which is correlated with the contact angle produced. This preliminary study is to gain information on the how does RIE affects the aluminum bondpad in terms of surface roughness and contact angle.
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8

Gan, C. L., E. K. Ng, B. L. Chan, U. Hashim, and F. C. Classe. "Technical Barriers and Development of Cu Wirebonding in Nanoelectronics Device Packaging." Journal of Nanomaterials 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/173025.

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Bondpad cratering, Cu ball bond interface corrosion, IMD (intermetal dielectric) cracking, and uncontrolled post-wirebond staging are the key technical barriers in Cu wire development. This paper discusses the UHAST (unbiased HAST) reliability performance of Cu wire used in fine-pitch BGA package. In-depth failure analysis has been carried out to identify the failure mechanism under various assembly conditions. Obviously green mold compound, low-halogen substrate, optimized Cu bonding parameters, assembly staging time after wirebonding, and anneal baking after wirebonding are key success factors for Cu wire development in nanoelectronic packaging. Failure mechanisms of Cu ball bonds after UHAST test and CuAl IMC failure characteristics have been proposed and discussed in this paper.
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9

Zegaoui, M., N. Choueib, P. Tilmant, M. François, C. Legrand, J. Chazelas, and D. Decoster. "A Novel Bondpad report process for III–V semiconductor devices using full HSQ properties." Microelectronic Engineering 86, no. 1 (January 2009): 68–71. http://dx.doi.org/10.1016/j.mee.2008.09.043.

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10

Colvin, J. T., S. S. Bhatia, and K. K. O. "Effects of substrate resistances on LNA performance and a bondpad structure for reducing the effects in a silicon bipolar technology." IEEE Journal of Solid-State Circuits 34, no. 9 (1999): 1339–44. http://dx.doi.org/10.1109/4.782095.

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Дисертації з теми "BONDPAD"

1

Chandrasekaran, Arvind. "Effect of encapsulant on high-temperature reliability of the gold wirebond-aluminum bondpad interface." College Park, Md. : University of Maryland, 2003. http://hdl.handle.net/1903/281.

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Анотація:
Thesis (M.S.) -- University of Maryland, College Park, 2003.
Thesis research directed by: Dept. of Mechanical Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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2

Mohd-Shariff, M. H. B. "Analysis of finite deformation of bonded and non-bonded rubber mountings." Thesis, University of Newcastle Upon Tyne, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.355075.

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3

Baggerman, Jacob. "Photoactive hydrogen-bonded rotaxanes." [S.l. : Amsterdam : s.n.] ; Universiteit van Amsterdam [Host], 2006. http://dare.uva.nl/document/23505.

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4

Willis, Kimberly. "Hydrogen-bonded liquid crystals." Thesis, University of Sheffield, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.266002.

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5

MARTÍNEZ, OLGUÍN GEMA JURIE. "Análisis comparativo de los rendimientos sectoriales de la BMV y de BIVA a través de las técnicas Logit y VaR, 2018." Tesis de Licenciatura, UNIVERSIDAD AUTONOMA DEL ESTADO DE MEXICO, 2020. http://hdl.handle.net/20.500.11799/109149.

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Анотація:
Como soporte, para poder cumplir con dichos objetivos, el trabajo de investigación se divide en cuatro capítulos: 10 • Capítulo I: Proporciona una recopilación de artículos, papers y journals acerca de cómo otros autores han trabajado y analizado casos y temas relacionados al de la presente investigación. De igual manera, se da una descripción de los ejes centrales del trabajo, para un mejor entendimiento de lo que trata el proyecto. • Capítulo II: En este apartado, se provee una introducción del Sistema Financiero Mexicano, cuáles son sus componentes y cómo funciona; de igual manera dicha sección habla acerca de la Bolsa Mexicana de Valores y de algunas de sus características tales como objetivo, funcionamiento, índice, entre otras. Así mismo, se discute la creación de BIVA, cómo y por qué surge una nueva bolsa de valores, cuáles son los beneficios directos e indirectos y cuál será su funcionamiento. Finalmente se hace una comparación entre bolsas en cuanto a sus propiedades (emisoras, índices, etc.). • Capítulo III: Una vez que se ha establecido la importancia de las variables de estudio, en el capítulo tres se procede a explicar en qué consiste el modelo en general, empezando por el tipo de variables, seguido por el tipo de estudio y las técnicas que se utilizan para llevar a cabo la investigación, que son: el modelo multivariable Logit y el modelo del valor VaR. • Capítulo IV: Por último, en este capítulo se da la explicación de la elaboración del modelo, se ponen en práctica todos los conocimientos previamente explicados, para hacer la comparación de los rendimientos y el valor en riesgo de cada uno de los sectores de las variables de estudio, BIVA y BMV.
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6

Sarmiento, Eljadue Nataly. "¿Bondad o estrategia? tejiendo responsibilidad social en el mundo del carbón /." Bogotá, D.C., Colombia : Universidad de los Andes, Facultad de Ciencias Sociales-Ceso, Departamento de Ciencia Política, 2008. http://catalog.hathitrust.org/api/volumes/oclc/390710419.html.

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7

Bressani, Luiz Antonio. "Experimental properties of bonded soils." Thesis, Imperial College London, 1990. http://hdl.handle.net/10044/1/7538.

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8

Al-Jazairy, Yousra H. "Microleakage of bonded amalgam restorations." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1996. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/mq23196.pdf.

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9

Miller, Tad W. "Modified intermetallic-bonded diamond composites /." Available to subscribers only, 2006. http://proquest.umi.com/pqdweb?did=1136092311&sid=16&Fmt=2&clientId=1509&RQT=309&VName=PQD.

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Анотація:
Thesis (M.S.)--Southern Illinois University Carbondale, 2006.
"Department of Mechanical Engineering and Energy Processes." Includes bibliographical references (leaves 99-102). Also available online.
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10

Piermattei, Alessio. "Liquid crystalline hydrogen-bonded rosettes." Enschede : University of Twente [Host], 2007. http://doc.utwente.nl/57859.

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Книги з теми "BONDPAD"

1

Āracci, Sujīva Prasanna. Bonda mīdun =: Bondha meedum. Nugēgoḍa: Sujīva Prasanna Āracci, 2001.

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2

Medina, Sarah. Bondad. Chicago, Ill: Heinemann Library, 2007.

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3

Cuánta bondad! Buenos Aires: Ediciones de la Flor, 1999.

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4

Williams, Sam. La bondad. Vero Beach, FL: Rourke Educational Media, 2014.

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5

Guache, Angel, and Ángel Guache. Media hora de bondad. Valencia: Pre-Textos, 1995.

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6

Lim, Catherine. The bondmaid. Woodstock, N.Y: Overlook Press, 1997.

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7

Lim, Catherine. The bondmaid. Singapore: Catherine Lim Pub., 1995.

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8

The bondmaid. Singapore: Marshall Cavendish Editions, 2011.

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9

Lim, Catherine. The bondmaid. London: BCA, 1997.

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10

Bicknell, Les. Bonded. [U.K.]: [Les Bicknell], 1996.

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Частини книг з теми "BONDPAD"

1

Takekuro, Makiko. "Chapter 4. Bonded but un-bonded." In Bonding through Context, 85–103. Amsterdam: John Benjamins Publishing Company, 2020. http://dx.doi.org/10.1075/pbns.314.04tak.

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2

Megliani, Mauro. "Bonded Debt." In Sovereign Debt, 351–86. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-08464-0_12.

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3

Megliani, Mauro. "Bonded Debt." In Sovereign Debt, 523–60. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-08464-0_17.

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4

Megliani, Mauro. "Bonded Debt." In Sovereign Debt, 205–36. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-08464-0_7.

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5

Zimmer, William F. "Bonded Abrasives." In Handbook of Adhesives, 664–70. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-0671-9_39.

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6

Bennett, Tony, and Janet Woollacott. "Bonded Ideologies." In Bond and Beyond, 93–142. London: Macmillan Education UK, 1987. http://dx.doi.org/10.1007/978-1-349-18610-5_5.

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7

Enhuber, Tamara. "Bonded Labor." In Humiliation, Degradation, Dehumanization, 191–212. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-9661-6_14.

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8

Gooch, Jan W. "Bonded Adhesive." In Encyclopedic Dictionary of Polymers, 89. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_1484.

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9

Gooch, Jan W. "Bonded Fabric." In Encyclopedic Dictionary of Polymers, 89. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_1485.

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10

Samonova, Elena. "Bonded labour." In Modern Slavery and Bonded Labour in South Asia, 58–97. Abingdon, Oxon ; New York, NY : Routledge, 2019. | Series: Routledge research on Asian development ; 5: Routledge, 2019. http://dx.doi.org/10.4324/9780429054952-4.

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Тези доповідей конференцій з теми "BONDPAD"

1

Hua, Younan N. "Failure Analysis of Discolored Bondpads in Wafer Fabrication." In ISTFA 1999. ASM International, 1999. http://dx.doi.org/10.31399/asm.cp.istfa1999p0149.

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Анотація:
Abstract Discolored bondpads & non-stick failure in 0.6 μm wafer fab process with the hot Al alloy metallization was investigated. SEM, EDX & AES techniques were used to identify the root causes. Failure analysis results showed that discolored bondpads & non-stick failure were caused by TiN residue introduced during L95 bondpad opening wafer fab process. TiN residue on bondpad might have led to non-stick bondpad issue. The results also showed that it was difficult to determine the trace amount of TiN residue on bondpad using EDX technique due to its limitations. In this work, Auger surface analysis technique was used to determine TiN residue on bondpads with Al/TiW/Ti metallization. Auger results showed that Ti & N peaks were detected on discolored bondpads. It has resulted in non-stick bondpad failure. The solution to eliminate TiN residue on bondpads was to increase etch time at L95 bondpad opening wafer fab process. After using the new recipe with longer etch time, Auger results on the bondpads showed that no Ti & N peaks were detected and the bond-pull testing also passed.
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2

Younan, Hua, Mo Zhiqiang, Zhao Siping, and Gong Hao. "Studies of Galvanic Corrosion (Al-Ti Cell) on Microchip Al Bondpads and Elimination Solutions." In ISTFA 2007. ASM International, 2007. http://dx.doi.org/10.31399/asm.cp.istfa2007p0193.

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Abstract Galvanic corrosion (two metal corrosion) on microchip Al bondpads may result in discolored or non-stick bondpad problem. In this paper, a galvanic corrosion case at bondpad edge will be presented. Besides galvanic corrosion (Al-Cu cell), a concept of galvanic corrosion (Al-Ti cell) is proposed, which is used to explain galvanic corrosion at bondpad edge with layers of TiN/Ti/Al metallization structure. A theoretical model of galvanic corrosion (Al-Ti cell) is proposed to explain chemically & physically failure mechanism of galvanic corrosion at bondpad edge. According to the theoretical model proposed in this paper, galvanic corrosion on microchip Al bondpads could be identified into two corrosion models: galvanic corrosion (Al-Cu cell) occurred mostly at the bondpad center and galvanic corrosion (Al-Ti cell) occurred specially at bondpad edge with TiN/Ti/Al metallization structure. In this paper, a theoretical model of galvanic corrosion (Ai-Ti cell) will be detail discussed so as to fully understand failure mechanism of galvanic corrosion the bondpad edge. Moreover possible solutions to eliminate galvanic corrosion (Al-Ti cell) are also discussed.
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3

Hua, Younan, Nistala Ramesh Rao, Yanjing Yang, Siping Zhao, and Redkar Shailesh. "Simulation Studies on Fluorine Spec Limit for Process Monitoring of Microchip Al Bondpads in Wafer Fabrication." In ISTFA 2013. ASM International, 2013. http://dx.doi.org/10.31399/asm.cp.istfa2013p0134.

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Abstract In wafer fabrication, Fluorine (F) contamination may cause fluorine-induced corrosion and defects on microchip Aluminum (Al) bondpads, resulting in bondpad discoloration or non-stick on pads (NSOP). Auger Electron Spectroscopy (AES) is employed for measurements of the fluorine level on the Al bondpads. From a Process control limit and a specification limit perspective, it is necessary to establish a control limit to enable process monitor reasons. Control limits are typically lower than the specification limits which are related to bondpad quality. The bondpad quality affects the die bondability. This paper proposes a simulation method to determine the specification limit of Fluorine and a Shelf Lifetime Accelerated Test (SLAT) for process monitoring. Wafers with different F levels were selected to perform SLAT with high temperature and high relative humidity tests for a fixed duration to simulate a one year wafer storage condition. The results of these simulation results agree with published values. If the F level on bondpad surfaces was less than 6.0 atomic percent (at%), then no F induced corrosion on the bond pads was observed by AES. Similarly, if the F level on bond pad surfaces was higher than 6.0 atomic per cent (at%) then AES measured F induced corrosion was observed.
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4

Younan, Hua. "Studies on a Failure Analysis Flow of Surface Contamination, Corrosion, and Underetch on Microchip Al Bondpads in Wafer Fabrication." In ISTFA 2005. ASM International, 2005. http://dx.doi.org/10.31399/asm.cp.istfa2005p0274.

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Анотація:
Abstract A failure analysis flow is developed for surface contamination, corrosion and underetch on microchip Al bondpads and it is applied in wafer fabrication. SEM, EDX, Auger, FTIR, XPS and TOF-SIMS are used to identify the root causes. The results from carbon related contamination, galvanic corrosion, fluorine-induced corrosion, passivation underetch and Auger bondpad monitoring will be presented. The failure analysis flow will definitely help us to select suitable methods and tools for failure analysis of Al bondpad-related issues, identify rapidly possible root causes of the failures and find the eliminating solutions at both wafer fabrication and assembly houses.
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5

Younan, Hua. "Studies and Application of Auger Monitoring System for Quality Control and Assurance of Al Bondpads." In ISTFA 2016. ASM International, 2016. http://dx.doi.org/10.31399/asm.cp.istfa2016p0287.

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Анотація:
Abstract In wafer fabrication (Fab), Fluorine (F) based gases are used for Al bondpad opening process. Thus, even on a regular Al bondpad, there exists a low level of F contamination. However, the F level has to be controlled at a lower level. If the F level is higher than the control/spec limits, it could cause F-induced corrosion and Al-F defects, resulting in pad discoloration and NSOP problems. In our previous studies [1-5], the theories, characteristics, chemical and physical failure mechanisms and the root causes of the F-induced corrosion and Al-F defects on Al bondpads have been studied. In this paper, we further study F-induced corrosion and propose to establish an Auger monitoring system so as to monitor the F contamination level on Al bondpads in wafer fabrication. Auger monitoring frequency, sample preparation, wafer life, Auger analysis points, control/spec limits and OOC/OOS quality control procedures are also discussed.
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6

Williams, Brett, Robert Davis, Justin Yerger, Derryl Allman, Bruce Greenwood, and Troy Ruud. "Bondpad Design Structural vs. Electrical Tradeoffs." In 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). IEEE, 2020. http://dx.doi.org/10.1109/asmc49169.2020.9185255.

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7

Younan, Hua, Nistala Ramesh Rao, Ng Adrian, and Tsai Tony. "Studies on a Qualification Method (OSAT) of Microchip Al Bondpads in Wafer Fabrication." In ISTFA 2009. ASM International, 2009. http://dx.doi.org/10.31399/asm.cp.istfa2009p0289.

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Abstract Non-stick on pad (NSOP) is a yield limiting factor that can occur due to various reasons such as particle contamination, galvanic corrosion, Fluorine-induced corrosion, process anomalies, etc. The problem of NSOP can be mitigated through a careful process characterization and optimization. In this paper, a bondpad qualification methodology (OSAT) will be discussed. It will be argued that by employing different physical analysis techniques in a failure analysis of wafer fabrication, it is possible to perform comprehensive characterization studies of the Aluminum bondpad so as to develop a robust far backend of line process. A good quality Al bondpad must meet the following four conditions-OSAT: (i) it should be no discoloration (using Optical inspection); (ii) should be defect free (using SEM inspection); (iii) should be with low contamination level (such as fluorine and carbon contamination should be within a control limit) (using Auger analysis) and (iv) should have a protective layer on bondpad surface so as to prevent bondpad corrosion (using TEM).
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8

Hua, Y. N., S. Redkar, C. K. Lau, and Z. Q. Mo. "A Study on Non-Stick Aluminium Bondpads Due to Fluorine Contamination Using SEM, EDX, TEM, IC, AUGER, XPS and TOF-SIMS Techniques." In ISTFA 2002. ASM International, 2002. http://dx.doi.org/10.31399/asm.cp.istfa2002p0495.

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Abstract Fluorine contamination on Al bondpads will result in corrosion, affect quality of bondpads and pose problem such as non-stick on pad (NSOP) during wire bonding at assembly process. In this paper, a fluorine contamination case in wafer fabrication will be studied. Some wafers were reported to have bondpad discoloration and bonding problem at the assembly house. SEM, EDX, TEM, AES and IC techniques were employed to identify the root cause of the failure. Failure analysis results showed that fluorine contamination had caused bondpad corrosion and thicker native aluminium oxide, which had resulted in discolored bondpads and NSOP. It was concluded that fluorine contamination was not due to wafer fab process, but was due to the wafer packaging foam material. XPS/ESCA and TOF-SIMS advanced tools were used to study the chemical and physical failure mechanism of fluorine-induced defects. An unknown Al compound was found using XPS technique and identified it as [AlF6]3- using electrochemical theories and TOF-SIMS technique. This finding was very significance, as it helped developing a theoretical electrochemical model for fluorine-induced corrosion and helped understanding of the mechanism of fluorine-induced corrosion on aluminium bondpads. It was found that fluorine contamination had formed [AlF6]3-on the affected bondpads and it had caused further electrochemical reactions and formed some new products of (NH4)+ and OH-. Then [AlF6]3- and (NH4)+ ions combined and formed a corrosive complex compound, (NH4)3(AlF6), while the OH- reacted with Al and caused further corrosion.
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9

Jacob, Peter, and Giovanni Nicoletti. "New FIB-Supported Approach for Wire-Bondpad Characterization." In ISTFA 2000. ASM International, 2000. http://dx.doi.org/10.31399/asm.cp.istfa2000p0035.

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Abstract Bond pad characterization is usually performed by mechanical cross-sectioning as well as pull and shear tests. However, since all these methods apply mechanical forces to the bond pad, artifacts may result. Focused Ion Beam (FIB) characterization is a mechanically stress-free characterization method, which allows more accurate conclusions regarding the intermetallic behaviour of the bonding area. Some new approaches presented here show how to improve the FIB characterization procedure and to combine it with classical characterization methods.
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10

Borremans, J., P. Wambacq, G. van der Plas, Y. Rolian, and M. Kuijk. "A Bondpad-Size Narrowband LNA for Digital CMOS." In 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. IEEE, 2007. http://dx.doi.org/10.1109/rfic.2007.380973.

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Звіти організацій з теми "BONDPAD"

1

Gabler, Jason. Better Bonded Ethernet Load Balancing. Office of Scientific and Technical Information (OSTI), September 2006. http://dx.doi.org/10.2172/883778.

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2

Aytug, Tolga. Atomically Bonded Transparent Superhydrophobic Coatings. Office of Scientific and Technical Information (OSTI), August 2015. http://dx.doi.org/10.2172/1209210.

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3

Banks, H. T., Gabriella A. Pinter, and O. H. Yeoh. Analysis of Bonded Elastic Blocks. Fort Belvoir, VA: Defense Technical Information Center, January 2001. http://dx.doi.org/10.21236/ada454440.

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4

Plucknett, K. P., T. N. Tiegs, K. B. Alexander, P. F. Becher, J. H. Schneibel, S. B. Waters, and P. A. Menchhofer. Intermetallic bonded ceramic matrix composites. Office of Scientific and Technical Information (OSTI), July 1995. http://dx.doi.org/10.2172/102180.

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5

Verhoeven, Stephan. Bonded Repair of Corrosion Grind-Outs. Fort Belvoir, VA: Defense Technical Information Center, April 2005. http://dx.doi.org/10.21236/ada437177.

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6

Tsai, Hsi C., James Alper, and David Barrett. Failure Analysis of Composite Bonded Joints. Fort Belvoir, VA: Defense Technical Information Center, March 1999. http://dx.doi.org/10.21236/ada375743.

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7

Kurfurst, P. J., and J. G. Bisson. Dynamic Properties of Ice - Bonded Sediments. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 1991. http://dx.doi.org/10.4095/132232.

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8

Tan, Seng C. Analysis of Bolted and Bonded Composite. Fort Belvoir, VA: Defense Technical Information Center, September 1992. http://dx.doi.org/10.21236/ada267792.

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9

Plucknett, K. P., T. N. Tiegs, and K. B. Alexander. Metallic and intermetallic-bonded ceramic composites. Office of Scientific and Technical Information (OSTI), May 1995. http://dx.doi.org/10.2172/105123.

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10

Beili, E. ATM-Based xDSL Bonded Interfaces MIB. RFC Editor, February 2013. http://dx.doi.org/10.17487/rfc6768.

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