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Статті в журналах з теми "Bonding wire"
Ko, Kuk Won, Dong Hyun Kim, Jiyeon Lee, and Sangjoon Lee. "3D Measurement System of Wire for Automatic Pull Test of Wire Bonding." Journal of Institute of Control, Robotics and Systems 21, no. 12 (December 1, 2015): 1130–35. http://dx.doi.org/10.5302/j.icros.2015.15.0131.
Повний текст джерелаShirakawa, Shinji. "Bonding Wire." Journal of SHM 9, no. 4 (1993): 30–38. http://dx.doi.org/10.5104/jiep1993.9.4_30.
Повний текст джерелаLevine, Lee. "Wire Bonding." EDFA Technical Articles 18, no. 1 (February 1, 2016): 22–28. http://dx.doi.org/10.31399/asm.edfa.2016-1.p022.
Повний текст джерелаZhong, Z. W. "Wire bonding using insulated wire and new challenges in wire bonding." Microelectronics International 25, no. 2 (April 18, 2008): 9–14. http://dx.doi.org/10.1108/13565360810875958.
Повний текст джерелаZhong, Z. W. "Wire bonding using copper wire." Microelectronics International 26, no. 1 (January 23, 2009): 10–16. http://dx.doi.org/10.1108/13565360910923115.
Повний текст джерелаQin, Ivy, Aashish Shah, Hui Xu, Bob Chylak, and Nelson Wong. "Advances in Wire Bonding Technology for Different Bonding Wire Material." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000406–12. http://dx.doi.org/10.4071/isom-2015-wp33.
Повний текст джерелаZhou, Hongliang, Yingchong Zhang, Jun Cao, Chenghao Su, Chong Li, Andong Chang, and Bin An. "Research Progress on Bonding Wire for Microelectronic Packaging." Micromachines 14, no. 2 (February 11, 2023): 432. http://dx.doi.org/10.3390/mi14020432.
Повний текст джерелаWon, Rachel. "Wire-bonding assembly." Nature Photonics 12, no. 9 (August 29, 2018): 500. http://dx.doi.org/10.1038/s41566-018-0251-z.
Повний текст джерелаMayer, Michael, and Yi-Shao Lai. "Copper Wire Bonding." Microelectronics Reliability 51, no. 1 (January 2011): 1–2. http://dx.doi.org/10.1016/j.microrel.2010.12.004.
Повний текст джерелаPan, Ming Qiang, Tao Chen, Li Guo Chen, and Li Ning Sun. "Analysis of Broken Wires during Gold Wire Bonding Process." Key Engineering Materials 503 (February 2012): 298–302. http://dx.doi.org/10.4028/www.scientific.net/kem.503.298.
Повний текст джерелаДисертації з теми "Bonding wire"
Suman, Shivesh K. "Characterization of temperature variation during the wire bonding process." Thesis, Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/17560.
Повний текст джерелаWennergren, Karl Fredrik. "Metal Filling of Through Silicon Vias (TSVs) using Wire Bonding Technology." Thesis, KTH, Mikro- och nanosystemteknik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-145552.
Повний текст джерелаChan, Yu Hin. "Optimization of metallization and process variables in low temperature wire bonding technology /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?MECH%202003%20CHAN.
Повний текст джерелаIncludes bibliographical references (leaves 129-132). Also available in electronic version. Access restricted to campus users.
Zhang, Xiaodong. "Characterization of copper diffusion in advanced packaging /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?MECH%202007%20ZHANG.
Повний текст джерелаAuersperg, Jürgen, D. Breuer, K. V. Machani, Sven Rzepka, and Bernd Michel. "FEA to Tackle Damage and Cracking Risks in BEoL Structures under Copper Wire Bonding Impact." Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207250.
Повний текст джерелаSchatt, Nathan A. "Finite Element Modeling of Ultrasonic Wire Bonding on Polyvinyl Acetate-Nanocomposite Substrates." Case Western Reserve University School of Graduate Studies / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=case1396634471.
Повний текст джерелаPei-FuChung and 鍾沛孚. "Wire bonding characteristics of 0.7mil Au-Pd-plated Cu wires." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/75255799222694720740.
Повний текст джерела國立成功大學
工程科學系碩博士班
101
In semiconductor packaging industry, the wire bonding technology has been developed for a long time. Since the equipment and technology are more mature than the others, wire bonding technology is still the mainstream for packaging technology. For the material used in the process, copper wires have numerous advantages over gold wires. Copper wires can save the cost up to 30~50% compared with gold wires, and the high electrical conductivity, good thermal conductivity, high stability of wire and slower growth speed in intermetallic compound (IMC) are all the advantages making copper wires more favorable. The formation of the IMC can strengthen the bond, but the IMC layer has higher electric resistance. During the growth of the IMC, Kirkendall voids[31] will appear at the interface between the IMC layer and the wire, and the voids will enlarge to form cracks through heat treatment, thus leading to the deterioration of electrical contacts and the reduction of reliability of bondability. The materials used in this experiment are the 0.7mil Au-Pd-plated copper wires which are not yet on the market and the existing Pd-plated copper wires. The experimental results show that Au-Pd-plated copper wire has a better breaking load and better elongation than these of the Pd-plated copper wire. The micro-hardness test shows that Au-Pd-plated copper wire is softer than the Pd-plated copper wire. With the same forming gas flow rate, Au-Pd-plated copper wire has better FAB (Free Air Ball) formation roundness than the Pd-plated copper wire. This experiment also examines the coverage of the coating on the copper ball after the EFO (Electrical Flame-Off). By choosing seven different spots on Pd-plated copper wire for element analysis, it is observed that the surfaces are all covered with a layer of palladium, and there is no exposed Cu. Gold and palladium are also found on the surface of the Au-Pd-plated copper wire. The growth of IMCs (Intermetallic Compounds) test shows that the growth rate on Au-Pd-plated copper wire is the same as the Pd-plated copper wire. During the wire bonding process, the Pd-plated copper wire is found unstable in the formation of second bond stitch and on the joint with the finger. Moreover, the tails are cut-off too fast causing alarm of the equipment with short tail defect. However, the experiment result shows that with an extra layer of gold coated on the palladium layer, voids on the plating layer can be reduced and the work efficiency can be improved.
Chiang, Tu-han, and 蔣篤翰. "LED Package Wire Bonding Performance Analysis." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/04921650589675330483.
Повний текст джерела大同大學
機械工程學系(所)
96
Wire Bonding is the one of the major circuit connection methods in current electronic packaging processes, which can enable the completion of circuit connectivity for chips or wafers with packaging substrate or Lead frame so as to achieve the purpose of electronic signal transmission. Wire bonding is part of the electronic packaging process, and its major function is to ensure the signal transmission between the electronic components, therefore the good wire bonding quality can accurately in addition to effectively transmit signals as intended. Currently, the trending for LED packaging components are leaning towards thinner and smaller, in comparison to the vital role assumed by wire bonding in the integral LED packaging process. Thus, among all the wire bonding quality indices, the values from forces of pulling and pushing will be used as inspection values for parameter modifications or fine-tuning efforts. This research is primarily based on LED packaging and it applies the comparisons between traditional wire bonding approach (Single) with current wire bonding approach (BSOB), as well as through the experimentation method, it placed the inspection results from the pulling and pushing values under the application of control charts to prove that, by using BSOB approach, it would create trustworthy product quality. Lastly, this research intends to find out and come up with enhancement strategies in regard to the causes for negatively influencing the wire bonding fabrications. Finally, this research applies case study for negativity analysis to prove the importance of pulling and pushing forces.
薛宇廷. "Study of Wire Bonding &; Bonding Finger in Substrate of Semiconductor." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/63975762490733436657.
Повний текст джерела逢甲大學
工業工程與系統管理學系
101
With the diversification of digital products such as computers and cell phone in recent years, the packaging process of semiconductor has evolved from the traditional technology to the development of high-precision and high-power miniaturized process. Semi-conductor packaging needs to achieve the goal of high reliability, good heat dissipation, and low manufacturing costs. Facing the fluctuation in customer demand and the shortening of life cycle product, cross-cutting and system integration are two important issues. The wire bonding step occupies a pivotal position in the packaging process. Due to the rapid development of the integrated circuit packaging technologies, the traditional wire bonders with low speed, low precision, and low stability, can no longer to meet the demand of the industry. So, using wire bonders with thermal ultrasound functions instead is a trend. The wire bonding design, however, has a close relationship with the UPH of the wire bonder. This issue is also investigated in this study.
Hung, Chong-Wei, and 洪崇偉. "The Study for Reliability of Wire-bonding Process by Copper Wire." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/3qe2x3.
Повний текст джерела國立高雄大學
電機工程學系碩士班
102
As technical developments progressed, semi-conductor packaging is now heading toward slender, high-density and high capillary count directions. At present, domestic package techniques are BGA(Ball Grid Array), QFP(Plastic Quad Flat Package), SOP(Small Out-Line Package), PLCC (Plastic Leaded Chip Carrier) and PDIP(PDIP Plastic Dual In-Line Package )based package techniques. Since BGA package technique generally involves solder ball arrayed at the base of chip base, solder ball replaces traditional lead frame surrounded by pins. One advantage of this type of package technique is that the No. of pins may increase with same size and area while the package area and weight are only half the QFP. It also has good electric and heat dissipation properties as well as package area reduction feature. Its demand and growth rate greatly exceed other package methods. Currently, most, information home electronic appliances and 3C products have adopted BGA package technique. This study aims is to pass reliability of wire-bonding process by copper wire. Based on the 3 quality characteristics of process intended for discussion, wire pull, ball shear , Internal Metal Coverage of the quality characteristics are obtained. Then, by use of Orthogonal array L9 and Reliability Temperature cycle Test, analysis why Internal Metal Coverage is the major factor to influence Open Test after Reliability . In addition, in order to pass reliability test, how to do good Internal Metal Coverage sample. The feasibility of this study method tested is further verified.
Книги з теми "Bonding wire"
Chauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong, and Michael G. Pecht. Copper Wire Bonding. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4614-5761-9.
Повний текст джерелаHarman, George G. Wire bonding in microelectronics: Materials, processes, reliability, and yield. 2nd ed. New York: McGraw-Hill, 1997.
Знайти повний текст джерелаSchwizer, Jürg. Force sensors for microelectronic packaging applications. Berlin: Springer, 2004.
Знайти повний текст джерелаPrasad, Shankara K. Advanced wirebond interconnection technology. Boston: Kluwer Academic Publishers, 2004.
Знайти повний текст джерелаHager, Christian. Lifetime estimation of aluminum wire bonds based on computational plasticity. Konstanz: Hartung-Gorre, 2000.
Знайти повний текст джерелаInternational Society for Hybrid Microelectronics., ed. Reliability and yield problems of wire bonding in microelectronics: The application of materials and interface science. Reston, Va: International Society for Hybrid Microelectronics, 1989.
Знайти повний текст джерелаM, Mayer, and Brand Oliver 1964-, eds. Force sensors for microelectronic packaging applications. Berlin: Springer, 2005.
Знайти повний текст джерелаCenter for Women's Resources (Philippines) and International Consultation on Micro-Chips Technology (1986 Manila, Philippines). From bonding wires to banding women: Proceedings of the International Consultation on Micro-Chips Technology, Manila, Philippines, 1986. Quezon City: Center for Women's Resources, 1988.
Знайти повний текст джерелаCopper Wire Bonding. Springer-Verlag New York Inc., 2013.
Знайти повний текст джерелаPecht, Michael G., ZhaoWei Zhong, Preeti S. Chauhan, and Anupam Choubey. Copper Wire Bonding. Springer London, Limited, 2013.
Знайти повний текст джерелаЧастини книг з теми "Bonding wire"
Kästle, Christopher, and Jörg Franke. "Wire Bonding." In CIRP Encyclopedia of Production Engineering, 1–4. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-642-35950-7_16839-1.
Повний текст джерелаKästle, Christopher, and Jörg Franke. "Wire Bonding." In CIRP Encyclopedia of Production Engineering, 1823–25. Berlin, Heidelberg: Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-53120-4_16839.
Повний текст джерелаChauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong, and Michael G. Pecht. "Bonding Process." In Copper Wire Bonding, 11–38. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_2.
Повний текст джерелаChauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong, and Michael G. Pecht. "Bonding Metallurgies." In Copper Wire Bonding, 39–56. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_3.
Повний текст джерелаChauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong, and Michael G. Pecht. "Copper Wire Bonding." In Copper Wire Bonding, 1–9. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_1.
Повний текст джерелаChauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong, and Michael G. Pecht. "Wire Bond Evaluation." In Copper Wire Bonding, 57–71. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_4.
Повний текст джерелаChauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong, and Michael G. Pecht. "Wire Bond Pads." In Copper Wire Bonding, 111–31. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_7.
Повний текст джерелаChauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong, and Michael G. Pecht. "Thermal Reliability Tests." In Copper Wire Bonding, 73–91. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_5.
Повний текст джерелаChauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong, and Michael G. Pecht. "Humidity and Electromigration Tests." In Copper Wire Bonding, 93–109. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_6.
Повний текст джерелаChauhan, Preeti S., Anupam Choubey, ZhaoWei Zhong, and Michael G. Pecht. "Concerns and Solutions." In Copper Wire Bonding, 133–49. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5761-9_8.
Повний текст джерелаТези доповідей конференцій з теми "Bonding wire"
Kai, Liao Jun, Liang Yi Hung, Li Wei Wu, Men Yeh Chiang, Don Son Jiang, C. M. Huang, and Yu Po Wang. "Silver alloy wire bonding." In 2012 IEEE 62nd Electronic Components and Technology Conference (ECTC). IEEE, 2012. http://dx.doi.org/10.1109/ectc.2012.6248983.
Повний текст джерелаNovotny, M., J. Jankovsky, I. Szendiuch, and Z. Barton. "Wire bonding power interconnection." In 2008 2nd Electronics Systemintegration Technology Conference. IEEE, 2008. http://dx.doi.org/10.1109/estc.2008.4684379.
Повний текст джерелаPan, Yongjun, Fulong Zhu, Xinxin Lin, Jiaquan Tao, Liping He, Han Wang, and Sheng Liu. "Comparing the copper and gold wire bonding during thermalsonic wire bonding process." In 2016 17th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2016. http://dx.doi.org/10.1109/icept.2016.7583127.
Повний текст джерелаShah, Aashish, Thomas Rockey, Hui Xu, Ivy Qin, Wu Jie, Oranna Yauw, and Bob Chylak. "Advanced wire bonding technology for Ag wire." In 2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC). IEEE, 2015. http://dx.doi.org/10.1109/eptc.2015.7412367.
Повний текст джерелаClauberg, Horst, Bob Chylak, Nelson Wong, Johnny Yeung, and Eugen Milke. "Wire bonding with Pd-coated copper wire." In 2010 IEEE CPMT Symposium Japan (Formerly VLSI Packaging Workshop of Japan). IEEE, 2010. http://dx.doi.org/10.1109/cpmtsympj.2010.5679678.
Повний текст джерелаRongzhi Gao, Lei Han, and Jue Zhong. "Experimental studies on bonding pressure in wire bonding." In Conference on High Density Microsystem Design and Packaging and Component Failure Analysis, 2006. HDP'06. IEEE, 2006. http://dx.doi.org/10.1109/hdp.2006.1707578.
Повний текст джерелаSrikanth, Narasimalu, J. Premkumar, M. Sivakumar, Y. M. Wong, and C. J. Vath. "Effect of Wire Purity on Copper Wire Bonding." In 2007 9th Electronics Packaging Technology Conference. IEEE, 2007. http://dx.doi.org/10.1109/eptc.2007.4469764.
Повний текст джерелаManoharan, Subramani, Chandradip Patel, and Patrick McCluskey. "Advancements in Silver Wire Bonding." In ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/ipack2017-74286.
Повний текст джерелаHo, Hong Meng. "Advanced copper wire bonding technology." In 2010 34th International Electronics Manufacturing Technology Conference (IEMT). IEEE, 2010. http://dx.doi.org/10.1109/iemt.2010.5746772.
Повний текст джерелаRuiz, A., E. Vega, R. Katiyar, and R. Valentin. "Novel Enabling Wire Bonding Technology." In 2007 Electronic Components and Technology Conference. IEEE, 2007. http://dx.doi.org/10.1109/ectc.2007.373837.
Повний текст джерела