Готові списки джерел за темами / ANALYSIS OF CMOS

Добірка наукової літератури з теми "ANALYSIS OF CMOS"

Автор: Grafiati
Опубліковано: 16 січня 2024

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Зміст

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "ANALYSIS OF CMOS".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "ANALYSIS OF CMOS"

1

LIAO, HAIFANG, WAYNE WEI-MING DAI, and RUI WANG. "A NEW CMOS DRIVER MODEL FOR TRANSIENT ANALYSIS AND POWER DISSIPATION ANALYSIS." International Journal of High Speed Electronics and Systems 07, no. 02 (June 1996): 269–85. http://dx.doi.org/10.1142/s0129156496000116.

Повний текст джерела
Анотація:
While most transient analysis techniques of interconnect networks ignore the nonlinearity of the driving gates, most CMOS driver models do not take into account the distributed loads. In this paper, we propose a new CMOS driver model which can handle distributed-lumped loads for transient analysis and power dissipation analysis. The output current of the CMOS driver is represented by a linear-quadratic-exponential piecewise model, taking into account the slope of the input signal, nonlinear effects of the driver and interconnect effects of the load. The CMOS transient leakage (short-circuit) current, thus short-circuit power dissipation, can be accurately evaluated. The model provides accuracy comparable to that of SPICE3e2 with one or two orders of magnitude less computing time.
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Cheyette, Oren. "OAS Analysis for CMOs." Journal of Portfolio Management 20, no. 4 (July 31, 1994): 53–66. http://dx.doi.org/10.3905/jpm.1994.409485.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Jomaah, Jalal, Majida Fadlallah, and Gerard Ghibaudo. "Low Frequency Noise Analysis in Advanced CMOS Devices." Advanced Materials Research 324 (August 2011): 441–44. http://dx.doi.org/10.4028/www.scientific.net/amr.324.441.

Повний текст джерела
Анотація:
A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are illustrated through experimental data obtained on advanced CMOS generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown.
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Sheikh, Shireen T. "Comparative Analysis of CMOS OTA." IOSR journal of VLSI and Signal Processing 1, no. 3 (2012): 01–05. http://dx.doi.org/10.9790/4200-0130105.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Schmitt-Landsiedel, D. "Yield Analysis of CMOS Ics." Solid State Phenomena 57-58 (July 1997): 327–36. http://dx.doi.org/10.4028/www.scientific.net/ssp.57-58.327.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Dimitrijev, S., and N. Stojadinović. "Analysis of CMOS transistor instabilities." Solid-State Electronics 30, no. 10 (October 1987): 991–1003. http://dx.doi.org/10.1016/0038-1101(87)90090-6.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Gajare, Milind, and Shedge D.K. "CMOS Trans Conductance based Instrumentation Amplifier for Various Biomedical Signal Analysis." NeuroQuantology 20, no. 5 (April 30, 2022): 53–60. http://dx.doi.org/10.14704/nq.2022.20.5.nq22148.

Повний текст джерела
Анотація:
Feed forward design techniques for the Trans-conductance operational amplifier removes the barriers of operating frequencies. It is now possible to design amplifiers with large the Trans-conductance that operates at Giga hertz frequency range. There are several Trans-conductance amplifiers used to design a medical and Industrial application that helps in processing various bio medical signals such as Electrocardiographs, Electroencephalographs, Electromyograms and several others. The proposed paper shows the implementation of an instrumentation amplifier using CMOS based the Trans-conductance operational amplifiers also the processing of biomedical ECG, EEG and EMG signals. The CMOS process technology helps to integrate complex circuits on minimal surface area. The Trans-conductance instrumentation operational amplifiers has features includes noise reduction, low DC offset, High output impedance and Common Mode rejection Ratio values. The circuit implementation and simulations has been done on Electronic Design and Automation tool with 0.13μm CMOS process technology.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Yao, Hong Tao, Zi Qiang Wang, Yuan Bao Gu, and Zhen Gang Jiang. "Analysis of Black Level Calibration Algorithm for CIS." Applied Mechanics and Materials 599-601 (August 2014): 1397–402. http://dx.doi.org/10.4028/www.scientific.net/amm.599-601.1397.

Повний текст джерела
Анотація:
This paper presents the structure and the operational principle of CMOS image sensors. And then the reason is illuminated for producing dark current and black level of CMOS image sensors. It is necessary to calibrate dark current and black level to improve quality of CMOS image sensors. The dark current is corrected by optimizing pixel structure, perfecting technology, improving 6layout, and correction double sample. But these ways do not calibrate black level. So, it is important to calibrate black level using black level calibration algorithm in the stage of image processing.
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Prajapati, Pankaj P., Anilkumar J. Kshatriya, Sureshbhai L. Bharvad, and Abhay B. Upadhyay. "Performance analysis of CMOS based analog circuit design with PVR variation." Bulletin of Electrical Engineering and Informatics 12, no. 1 (February 1, 2023): 141–48. http://dx.doi.org/10.11591/eei.v12i1.4357.

Повний текст джерела
Анотація:
Process, supply voltage, and temperature (PVT) are three important factors which contribute to performance variation of the complementary metal–oxide–semiconductor (CMOS) based analog circuits. In this paper, CMOS based analog circuit design with the PVT variation effects are explored. The effects of the PVT variation on the performance of CMOS based analog circuits are introduced. The optimization of CMOS based analog circuits such as differential amplifier (DA) and two-stage operational amplifier (op amp) circuits with PVT variations with different algorithms such as cockoo search (CS), particle swam optimization (PSO), hybrid CSPSO, and differential evaluation (DE) algorithms is presented. Each algorithm is implemented using the C programming language, interfaced with Ngspice circuit simulator, and tested on the Intel®core™ i5, 2.40 GHz processor with 8 GB internal RAM using the Ubuntu operating system (OS). The result shows PVT variation affects the performance of CMOS circuit.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Cho, Won-ho, and Ki-sang Hong. "Affine Motion Based CMOS Distortion Analysis and CMOS Digital Image Stabilization." IEEE Transactions on Consumer Electronics 53, no. 3 (August 2007): 833–41. http://dx.doi.org/10.1109/tce.2007.4341553.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Дисертації з теми "ANALYSIS OF CMOS"

1

Rabe, Dirk. "Accurate power analysis of integrated CMOS circuits on gate level." [S.l.] : [s.n.], 2001. http://deposit.ddb.de/cgi-bin/dokserv?idn=962733520.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Chan, Na-Han. "Rapid current analysis for CMOS digital circuits." Thesis, McGill University, 1994. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=26380.

Повний текст джерела
Анотація:
A versatile and efficient computer-aided analysis tool, CUREST, has been developed for the analysis of supply currents in CMOS digital circuits. It is based on Nabavi-Lishi's semi-analytical model for computing the current and delay in a CMOS logic gate which, when compared to HSPICE running the level-3 MOSFET model, is more than three orders of magnitude faster, and accurate to within 10%. CUREST is built on top of the timing analyser TAMIA and, in particular, uses its circuit parser and its data structure to store the circuit topology and primary input pattern.
Extension tests on benchmark circuits containing up to 555 gates, which were analysed with CUREST using thousands of primary input patterns, demonstrate that the current analysis time is in the range of 1ms per gate per input pattern, using a SUN4/490 workstation with 32 Mb of main memory, running the SUN OS 4.103 operating system. The peak value of the total supply current, the current rise-time, and the time at which the peak occurs are usually computed to within 10% of HSPICE. However, appreciable errors often occur in the average current. This is because at the moment we do not have a good model for dealing with incomplete transitions associated with glitches in a CMOS gate.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Ruiz, Amador Dolly Natalia. "Multilevel aging phenomena analysis in complex ultimate CMOS designs." Thesis, Grenoble, 2012. http://www.theses.fr/2012GRENT002/document.

Повний текст джерела
Анотація:
L'auteur n'a pas fourni de résumé en français
Integrated circuits evolution is driven by the trend of increasing operating frequencies and downscaling of the device size, while embedding more and more complex functionalities in a single chip. However, the continuation of the device-scaling race generates a number of technology challenges. For instance, the downscaling of transistor channel lengths induce short-channel effects (drain-induced barrier lowering and punch-through phenomena); high electric field in the devices tend to increase Hot electron effect (or Hot Carrier) and Oxide Dielectric Breakdown; higher temperatures in IC products generates an increase of the Negative Bias Temperature Instability (NBTI) effect on pMOS devices. Today, it is considered that the above reliability mechanisms are ones of the main causes of circuit degradation performance in the field. This dissertation will address the Hot Carrier (HC) and NBTI impacts on CMOS product electrical performances. A CAD bottom-up approach will be proposed and analyzed, based on the Design–in Reliability (DiR) methodology. With this purpose, a detailed analysis of the NBTI and the HC behaviours and their impact at different abstraction level is provided throughout this thesis. First, a physical framework presenting the NBTI and the HC mechanisms is given, focusing on electrical parameters weakening of nMOS and pMOS transistors. Moreover, the main analytical HC and NBTI degradation models are treated in details. In the second part, the delay degradation of digital standard cells due to NBTI, HCI is shown; an in-depth electrical CAD analysis illustrates the combined effects of design parameters and HCI/NBTI on the timing performance of standard cells. Additionally, a gate level approach is developed, in which HC and NBTI mechanisms are individually addressed. The consequences of the degradation at system level are presented in the third part of the thesis. With this objective, data extracted from silicon measures are compared against CAD estimations on two complexes IPs fabricated on STCMOS 45nm technologies. It is expected that the findings of this thesis highly contribute to the understanding of the NBTI and HC reliability wearout mechanisms at the system level.STAR
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Ranjan, Mahim. "Analysis and design of CMOS ultra wideband receivers." Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2006. http://wwwlib.umi.com/cr/ucsd/fullcit?p3220380.

Повний текст джерела
Анотація:
Thesis (Ph. D.)--University of California, San Diego, 2006.
Title from first page of PDF file (viewed September 8, 2006). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references (p. 121-123).
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Rodnunsky, Nelson Lawrence. "Analysis of power dissipations in CMOS circuit designs." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0005/MQ34409.pdf.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Phang, Khoman S. "CMOS optical preamplifier design using graphical circuit analysis." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/NQ58961.pdf.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Yee, Gaylin Mildred. "An integrated micromachined CMOS spectrometer for biochemical analysis /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Sullivan, Patrick J. "Analysis and experimental results of RF CMOS mixers /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 1998. http://wwwlib.umi.com/cr/ucsd/fullcit?p9835390.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Muir, Keith Ross. "Mixed-mode microsystems for biological cell actuation and analysis." Thesis, University of Edinburgh, 2017. http://hdl.handle.net/1842/28879.

Повний текст джерела
Анотація:
Personalised medicine is widely considered to be the future of global healthcare, where diagnosis, treatment, and potentially even drug development, will become specific to, and optimised for, each individual patient. Traditional population based cell studies suppress the influence of outlier cells that are frequently those of most clinical relevance. Hence single-cell analysis is becoming increasingly important in understanding disease, aiding diagnosis and selecting tailored treatment; but remains the preserve of biomedical laboratories far from the patient. Current instruments depend upon cell-labelling to identify the cell type(s) of interest, which require that these be chosen a-priori and may not be those most clinically relevant. Furthermore, cell-labelling is fundamentally subjective, requiring highly-skilled operators to decide upon the validity of each and every test. Therefore, new test methods need to be developed to enable the widespread adoption of single-cell analysis. The passive electrical properties of biological cells are known to be indicative of the specific cell type, but no technology has demonstrated their comprehensive measurement within a mass-manufacturable device. This work aims to show that biologically meaningful information can be obtained in the form of identifiable “cell signatures” through broadband frequency measurements spanning 100 kHz to 100 MHz that exploit the properties of differential electric fields. This hypothesis is tested through the design, implementation and experimental testing of a dedicated microsystem that integrates two novel designs of electrical sensor within a standard, mass-manufacturable Complementary Metal-Oxide Semiconductor microelectronics technology. One sensor measures the absolute electrical environment above a single sense electrode. The other measures the difference in electrical environment between a pair of electrodes, with view to provide information regarding the suspended cell only, through rejecting the common signal due to its suspending medium. Both sensors are shown capable of detecting individual biological cells in physiological solution, and the differential sensor capable of identifying individually-fixed red blood cells, cervical cancer HeLa cells, and three diameters of homogeneous polystyrene micro-beads of comparable size, all while suspended in physiological saline. These results confirm the hypothesis that differential electric fields provide greater distinction of suspended cells from their environment than existing electrical methods. This finding shows that electrode polarisation arising from proximity to liquids, and particularly physiological media, can be overcome through fully-differential electrical cell sensing. However, misalignment between cells and sensor electrodes limits the sensitivity achieved with the microsystem. Methods to overcome such alignment issues should be investigated in future work, along with higher frequency measurements beyond those presented here.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Basedau, Philipp Michael. "Analysis and design of CMOS LC and crystal oscillators /." Zürich, 1999. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=13216.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Книги з теми "ANALYSIS OF CMOS"

1

Kang, Sung-Mo. CMOS digital integrated circuits: Analysis and design. 2nd ed. Boston, MA: McGraw-Hill, 1998.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Yusuf, Leblebici, ed. CMOS digital integrated circuits: Analysis and design. 3rd ed. Boston: McGraw-Hill, 2003.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Kang, Sung-Mo. CMOS digital integrated circuits: Analysis and design. New York: McGraw-Hill, 1996.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Kang, Sung-Mo. CMOS digital integrated circuits: Analysis and design. 2nd ed. Boston, Mass: McGraw-Hill, 1999.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Li, Xiaopeng. Multi-standard CMOS wireless receivers: Analysis and design. Boston: Kluwer Academic Publishers, 2002.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Li, Xiaopeng. Multi-standard CMOS wireless receivers: Analysis and design. Boston: Kluwer Academic Publishers, 2002.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Basedau, Philipp Michael. Analysis and design of CMOS, LC, and crystal oscillators / Philipp Michael Basedau. Konstanz: Hartung-Gorre Verlag, 1999.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

CMOS voltage reference: An analytical and practical perspective. Hoboken: IEEE ; Wiley, 2013.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Madrid, Philip E. Device design and process window analysis of a deep submicron CMOS VLSI technology. Reading, Mass: Addison-Wesley, 1992.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Nance, James Milton. Cmas tutorial workbook. Galveston, TX: National Oceanic and Atmospheric Administration, National Marine Fisheries Service, Southeast Fisheries Center, Galveston Laboratory, 1990.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Частини книг з теми "ANALYSIS OF CMOS"

1

Veendrick, Harry J. M. "Testing, Yield, Packaging, Debug and Failure Analysis." In Nanometer CMOS ICs, 495–571. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-47597-4_10.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Veendrick, H. J. M. "Testing, yield, packaging, debug and failure analysis." In Nanometer CMOS ICs, 589–686. Dordrecht: Springer Netherlands, 2008. http://dx.doi.org/10.1007/978-1-4020-8333-4_10.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Gharavi, Sam, and Babak Heydari. "mm-Wave CMOS Noise Analysis." In Ultra High-Speed CMOS Circuits, 35–45. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0305-0_4.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Bhushan, Manjul, and Mark B. Ketchen. "Data Analysis." In Microelectronic Test Structures for CMOS Technology, 317–58. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9377-9_10.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Hehn, Thorsten, and Yiannos Manoli. "Analysis of Different Interface Circuits." In CMOS Circuits for Piezoelectric Energy Harvesters, 41–56. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-017-9288-2_3.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Hehn, Thorsten, and Yiannos Manoli. "Performance Analysis of the PSCE Chip." In CMOS Circuits for Piezoelectric Energy Harvesters, 129–85. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-017-9288-2_6.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Villar Piqué, Gerard, and Eduard Alarcón. "3-Level Buck Converter Analysis and Specific Components Models." In CMOS Integrated Switching Power Converters, 133–70. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-8843-0_5.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Rishab Mehra, Sarita Kumari, and Aminul Islam. "Cross-Coupled Dynamic CMOS Latches: Scalability Analysis." In Advances in Intelligent Systems and Computing, 307–15. Singapore: Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-2035-3_31.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Alioto, Massimo, Elio Consoli, and Gaetano Palumbo. "Analysis and Comparison in the Energy-Delay-Area Domain." In Flip-Flop Design in Nanometer CMOS, 119–73. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-01997-0_5.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Boukhayma, Assim. "Detailed Noise Analysis in Low-Noise CMOS Image Sensors." In Ultra Low Noise CMOS Image Sensors, 61–83. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-68774-2_4.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "ANALYSIS OF CMOS"

1

Abbas, Haider Muhi, Mark Zwolinski, and Basel Halak. "An application-specific NBTI ageing analysis method." In 2015 International Workshop on CMOS Variability (VARI). IEEE, 2015. http://dx.doi.org/10.1109/vari.2015.7456553.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Abuayob, Eli, Evgeny Nisenboim, Amir Raveh, Baohua Niu, and Tom Tong. "Complex Waveform Analysis for Advanced CMOS ICs." In ISTFA 2016. ASM International, 2016. http://dx.doi.org/10.31399/asm.cp.istfa2016p0068.

Повний текст джерела
Анотація:
Abstract Laser scanning microscope (LSM) based waveform acquisition is widely used in advanced CMOS IC design validation and debug application. Complex waveforms obtained from LSM probing on CMOS ICs are often difficult to fully comprehend without deep understanding of the complex physics involved even in planar CMOS. The introduction of 3-D Tri-Gate transistors since 2010 made this even more challenging. In this paper, we present both model based simulation and probing validations on the most advanced 3D Tri-Gate based CMOS ICs that give us a clear understanding of the nature of these complex waveforms.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Kentaro Doi, Koichi Nakamura, and Akitomo Tachibana. "Local-property analysis for modeling of gate insulator materials." In 2006 International Workshop on Nano CMOS (IWNC). IEEE, 2006. http://dx.doi.org/10.1109/iwnc.2006.4570993.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Nobuo Tanaka, Jun Yamasaki, Shin Inamoto, and Koh Saitoh. "High-resolution TEM/STEM analysis of SiO2/Si(100) and La2O3/Si(100) interfaces." In 2006 International Workshop on Nano CMOS (IWNC). IEEE, 2006. http://dx.doi.org/10.1109/iwnc.2006.4570981.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Alioto, Massimo, Elio Consoli, and Gaetano Palumbo. "Analysis and comparison of variations in double edge triggered flip-flops." In 2014 5th European Workshop on CMOS Variability (VARI). IEEE, 2014. http://dx.doi.org/10.1109/vari.2014.6957076.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Garcia-Redondo, Fernando, Marisa Lopez-Vallejo, Pablo Royer, and Javier Agustin. "A tool for the automatic analysis of single events effects on electronic circuits." In 2014 5th European Workshop on CMOS Variability (VARI). IEEE, 2014. http://dx.doi.org/10.1109/vari.2014.6957082.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Roger, Frederic, Anderson Singulani, Sara Carniello, Lado Filipovic, and Siegfried Selberherr. "Global statistical methodology for the analysis of equipment parameter effects on TSV formation." In 2015 6th International Workshop on CMOS Variability (VARI). IEEE, 2015. http://dx.doi.org/10.1109/vari.2015.7456561.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Hatakeyama, Tomoyuki, Kazuyoshi Fushinobu, and Ken Okazaki. "Effect of the Device Structure in Electro-Thermal Analysis of Si CMOS." In ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/ipack2005-73151.

Повний текст джерела
Анотація:
Numerical calculation of submicron silicon MOSFET and CMOS device is performed. In order to have a higher degree of integration, the distance between two MOSFETs in CMOS structure can be decreased. But decreasing the distance between two MOSFETs results in an electrical interaction. In this research, by comparing the calculation result of n-type and p-type MOSFET and that of CMOS, we examine the interaction mechanism between n-type and p-type MOSFET in CMOS device when the distance between n-type and p-type MOSFET is decreased. From the calculated results, we investigate that the reason of the interaction between two MOSFET in CMOS is the forward bias at the p-n junction of substrate. Furthermore, we can estimate the distance, at the case of interaction, from the results of n-type and p-type MOSFET separately model, not from the results of CMOS model.
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Lee, Ji Soo. "Improved analysis of CMOS photodiode." In Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, edited by John C. Armitage. SPIE, 2017. http://dx.doi.org/10.1117/12.2283941.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Kupreyev, Dmitriy. "Noise analysis of CMOS-memristive and CMOS-resistive current mirrors." In 2018 International Conference on Computing and Network Communications (CoCoNet). IEEE, 2018. http://dx.doi.org/10.1109/coconet.2018.8476814.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Звіти організацій з теми "ANALYSIS OF CMOS"

1

Nguyen, Du Van. An ASIC Power Analysis System for Digital CMOS Design. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.7249.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Balaban, Harold S., Paul M. Kodzwa, Andrew S. Rehwinkel, Gregory A. Davis, and Patricia F. Bronson. Root Cause Analysis for the ATIRCM/CMWS Program. Fort Belvoir, VA: Defense Technical Information Center, June 2010. http://dx.doi.org/10.21236/ada555310.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Benmerrouche, Mo. 11-BM CMS Beamline Radiation Shielding Analysis. Office of Scientific and Technical Information (OSTI), August 2016. http://dx.doi.org/10.2172/1493166.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Echevarria-Doyle, Waleska, S. McKay, and Susan Bailey. Sensitivity of sediment transport analyses in dam removal applications. Engineer Research and Development Center (U.S.), September 2023. http://dx.doi.org/10.21079/11681/47595.

Повний текст джерела
Анотація:
Dam removal has become a widespread river management practice in the US for a variety of goals including ecosystem restoration, removing aging infrastructure, flood risk management, and recreation. The ability to forecast the sediment impacts of dam removal is critical to evaluating different management alternatives that can minimize adverse consequences for ecosystems and human communities. Tullos et al. (2016) identified seven Common Management Concerns (CMCs) associated with dam removal. Four of these CMCs; degree and rate of reservoir sediment erosion, excessive channel incision upstream of reservoirs, downstream sediment aggradation, and elevated downstream turbidity are associated with stored sediment release and changing fluvial hydraulics. There are a range of existing qualitative and quantitative tools developed to infer or quantify geomorphic implications of disturbances like these in river environments (McKay et al. 2019). This study investigated how a one-dimensional (1D) sediment transport model can inform these four CMCs, develop an approach for assessing sediment transport model sensitivity in the context of the Simkins Dam removal, and use sensitivity analyses to identify key uncertainties, which can inform data collection and model building for other dam removal projects. For the selected case study, model outputs including the mean effective invert change (MEIC) and eroded sediment volume from reservoir were highly sensitive to the variation of the reservoir sediment gradation and sorting method selection. These model outputs also showed some sensitivity to the selected transport functions. Erosion method sensitivity using the channel evolution method will vary depending on side slope and channel parameter selection.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Abercrombie, Daniel Robert, Hamed Bakhshiansohi, Sharad Agarwal, Jennifer Adelman-McCarthy, Andres Vargas Hernandez, Weinan Si, Lukas Layer, and Jean-Roch Vlimant. Automatic log analysis with NLP for the CMS workflow handling. Office of Scientific and Technical Information (OSTI), November 2019. http://dx.doi.org/10.2172/1637601.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Gu, Xinyu, Chongbo Zhao, and Jianying Xi. The clinical manifestations and treatment strategies of congenital myasthenic syndrome associated with endplate development and maintenance deficiency: a systematic review and meta-analysis of case reports and case series. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, March 2023. http://dx.doi.org/10.37766/inplasy2023.3.0085.

Повний текст джерела
Анотація:
Review question / Objective: We aimed to investigate the demographic features, clinical manifestations and treatment strategies of CMS associated with the Agrin/LRP4/MuSK/Dok7/Rapsyn signaling pathway. Condition being studied: As with all other rare disorders, there has been few large cohort study or clinical trials focusing on CMS associated with endplate development and maintenance deficiency. In such case, systematic reviews are required to help guide the clinician’s diagnostic test and therapeutic strategy, so as to avoid misdiagnosis and inappropriate treatment.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Peters, Valerie A., Alistair Ogilvie, and Paul S. Veers. Wind energy Computerized Maintenance Management System (CMMS) : data collection recommendations for reliability analysis. Office of Scientific and Technical Information (OSTI), September 2009. http://dx.doi.org/10.2172/985499.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Peters, Valerie A., and Alistair B. Ogilvie. Wind energy Computerized Maintenance Management System (CMMS) : data collection recommendations for reliability analysis. Office of Scientific and Technical Information (OSTI), January 2012. http://dx.doi.org/10.2172/1035328.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Arhin, Stephen, Babin Manandhar, and Adam Gatiba. Influence of Pavement Conditions on Commercial Motor Vehicle Crashes. Mineta Transportation Institute, December 2023. http://dx.doi.org/10.31979/mti.2023.2343.

Повний текст джерела
Анотація:
Commercial motor vehicle (CMV) safety is a major concern in the United States, including the District of Columbia (DC), where CMVs make up 15% of traffic. This research uses a comprehensive approach, combining statistical analysis and machine learning techniques, to investigate the impact of road pavement conditions on CMV accidents. The study integrates traffic crash data from the Traffic Accident Reporting and Analysis Systems Version 2.0 (TARAS2) database with pavement condition data provided by the District Department of Transportation (DDOT). Data spanning from 2016 to 2020 was collected and analyzed, focusing on CMV routes in DC. The analysis employs binary logistic regression to explore relationships between injury occurrence after a CMV crash and multiple independent variables. Additionally, Artificial Neural Network (ANN) models were developed to classify CMV crash injury severity. Importantly, the inclusion of pavement condition variables (International Roughness Index and Pavement Condition Index) substantially enhanced the accuracy of the logistic regression model, increasing predictability from 0.8% to 41%. The study also demonstrates the potential of Artificial Neural Network models in predicting CMV crash injury severity, achieving an accuracy of 60% and an F-measure of 0.52. These results highlight the importance of considering road pavement conditions in road safety policies and interventions. The study provides valuable insights for policymakers and stakeholders aiming to enhance road safety for CMVs in the District of Columbia and showcases the potential of machine learning techniques in understanding the complex interplay between road conditions and CMV crash occurrences.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Svynarenko, Radion, Theresa L. Profant, and Lisa C. Lindley. Effectiveness of concurrent care to improve pediatric and family outcomes at the end of life: An analytic codebook. Pediatric End-of-Life (PedEOL) Care Research Group, College of Nursing, University of Tennessee, Knoxville, 2022. http://dx.doi.org/10.7290/m5fbbq.

Повний текст джерела
Анотація:
Implementation of the section 2302 of the 2010 Patient Protection and Affordable Care Act (ACA) enabled children enrolled in Medicaid/Children's Health Insurance Program with a prognosis of 6 months to live to use hospice care while continuing treatment for their terminal illness. Although concurrent hospice care became available more than a decade ago, little is known about the socio-demographic and health characteristics of children who received concurrent care; health care services they received while enrolled in concurrent care, their continuity, management, intensity, fragmentation; and the costs of care. The purpose of this study was to answer these questions using national data from the Centers of Medicare and Medicaid Services (CMS), which covered the first three years of ACA – from January 1, 2011, to December 31, 2013.The database included records of 18,152 children younger than the age of 20, who were enrolled in Medicaid hospice care in the sampling time frame. Children in the database also had a total number of 42,764 hospice episodes. Observations were excluded if the date of birth or death was missing or participants were older than 21 years. To create this database CMS data were merged with three other complementary databases: the National Death Index (NDI) that provided information on death certificates of children; the U.S. Census Bureau American Community Survey that provided information on characteristics of communities where children resided; CMS Hospice Provider of Services files and CMS Hospice Utilization and Payment files were used for data on hospice providers, and with a database of rural areas created by the Health Resources and Services Administration (HRSA). In total, 130 variables were created, measuring demographics and health characteristics of children, characteristics of health providers, community characteristics, clinical characteristics, costs of care, and other variables.
Стилі APA, Harvard, Vancouver, ISO та ін.
Також вас можуть зацікавити розширені добірки на тему "ANALYSIS OF CMOS" для конкретних типів джерел:
Статті в журналах Дисертації Книги
Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!

До бібліографії