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Статті в журналах з теми "2D material technology"
Yang, Hongyan, Yunzheng Wang, Zian Cheak Tiu, Sin Jin Tan, Libo Yuan, and Han Zhang. "All-Optical Modulation Technology Based on 2D Layered Materials." Micromachines 13, no. 1 (January 7, 2022): 92. http://dx.doi.org/10.3390/mi13010092.
Повний текст джерелаWu, Yan-Fei, Meng-Yuan Zhu, Rui-Jie Zhao, Xin-Jie Liu, Yun-Chi Zhao, Hong-Xiang Wei, Jing-Yan Zhang, et al. "The fabrication and physical properties of two-dimensional van der Waals heterostructures." Acta Physica Sinica 71, no. 4 (2022): 048502. http://dx.doi.org/10.7498/aps.71.20212033.
Повний текст джерелаMasurkar, Nirul, Sundeep Varma, and Leela Mohana Reddy Arava. "Supported and Suspended 2D Material-Based FET Biosensors." Electrochem 1, no. 3 (July 23, 2020): 260–77. http://dx.doi.org/10.3390/electrochem1030017.
Повний текст джерелаMaiti, Rishi, Rohit A. Hemnani, Rubab Amin, Zhizhen Ma, Mohammad H. Tahersima, Tom A. Empante, Hamed Dalir, Ritesh Agarwal, Ludwig Bartels та Volker J. Sorger. "A semi-empirical integrated microring cavity approach for 2D material optical index identification at 1.55 μm". Nanophotonics 8, № 3 (21 лютого 2019): 435–41. http://dx.doi.org/10.1515/nanoph-2018-0197.
Повний текст джерелаWu, Yuanpeng, Ping Wang, Woncheol Lee, Anthony Aiello, Parag Deotare, Theodore Norris, Pallab Bhattacharya, Mackillo Kira, Emmanouil Kioupakis, and Zetian Mi. "Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications." Applied Physics Letters 122, no. 16 (April 17, 2023): 160501. http://dx.doi.org/10.1063/5.0145931.
Повний текст джерелаMurali, G., Jishu Rawal, Jeevan Kumar Reddy Modigunta, Young Ho Park, Jong-Hoon Lee, Seul-Yi Lee, Soo-Jin Park, and Insik In. "A review on MXenes: new-generation 2D materials for supercapacitors." Sustainable Energy & Fuels 5, no. 22 (2021): 5672–93. http://dx.doi.org/10.1039/d1se00918d.
Повний текст джерелаLate, Dattatray J., and Claudia Wiemer. "Advances in low dimensional and 2D materials." AIP Advances 12, no. 11 (November 1, 2022): 110401. http://dx.doi.org/10.1063/5.0129120.
Повний текст джерелаShang, Peng, Huaiqing Zhang, Xiaopeng Liu, Zhuang Yang, Bingfeng Liu, and Teng Liu. "Cutting-Force Modeling Study on Vibration-Assisted Micro-Milling of Bone Materials." Micromachines 14, no. 7 (July 14, 2023): 1422. http://dx.doi.org/10.3390/mi14071422.
Повний текст джерелаChen, Cheng, Xiao Hui Wang, Zhi Qiang Dong, Gong Chen, Lu Xiao Han, and Zhi Gang Zhu. "Anti-Counterfeiting Layer of 2D Colloidal Crystal Based Photonic Material." Materials Science Forum 972 (October 2019): 185–90. http://dx.doi.org/10.4028/www.scientific.net/msf.972.185.
Повний текст джерелаKaul, Anupama B. "Graphene and The Advent of Other Layered-2D Materials for Nanoelectronics, Photonics and Related Applications." MRS Proceedings 1549 (2013): 11–16. http://dx.doi.org/10.1557/opl.2013.812.
Повний текст джерелаДисертації з теми "2D material technology"
Hempel, Marek Ph D. Massachusetts Institute of Technology. "Technology and applications of 2D materials in micro- and macroscale electronics." Thesis, Massachusetts Institute of Technology, 2020. https://hdl.handle.net/1721.1/130201.
Повний текст джерелаCataloged from student-submitted PDF of thesis.
Includes bibliographical references (pages 198-209).
Over the past 50 years, electronics has truly revolutionized our lives. Today, many everyday objects rely on electronic circuitry from gadgets such as wireless earbuds, smartphones and laptops to larger devices like household appliances and cars. However, the size range of electronic devices is still rather limited from the millimeter to meter scale. Being able to extend the reach of electronics from the size of a red blood cell to a skyscraper would enable new applications in many areas including energy production, entertainment, environmental sensing, and healthcare. 2D-materials, a new class of atomically thin materials with a variety of electric properties, are promising for such electronic systems with extreme dimension due to their flexibility and ease of integration. On the macroscopic side, electronics produced on thin films by roll-to-roll fabrication has great potential due to its high throughput and low production cost. Towards this end, this thesis explores the transfer of 2D-materials onto flexible EVA/PET substrates with hot roll lamination and electrochemical delamination using a custom designed roll-to-roll setup. The transfer process is characterized in detail and the lamination of multiple 2D material layers is demonstrated. As exemplary large-scale electronics application, a flexible solar cell with graphene transparent electrode is discussed. On the microscopic side, this thesis presents a 60x60 [mu]m² microsystem platform called synthetic cells or SynCells. This platform offers a variety of building blocks such as chemical sensors and transistors based on molybdenum disulfide, passive germanium timers, iron magnets for actuation, as well as gallium nitride LEDs and solar cells for communication and energy harvesting. Several system-level applications of SynCells are explored such as sensing in a microfluidic channel or spray-coating SynCells on arbitrary surfaces.
by Marek Hempel.
Ph. D.
Ph.D. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science
ROTTA, DAVIDE. "Emerging devices and materials for nanoelectronics." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2015. http://hdl.handle.net/10281/76048.
Повний текст джерелаThis work of thesis explores two emerging research device concepts as possible platforms for novel integrated circuits with unconventional functionalities. Nowadays integrated circuits with advanced performances are available at affordable costs, thanks to the progressive miniaturization of electronic components in the last decades. However, bare geometrical scaling is no more a practical way to improve the device performances and alternative strategies must be considered to achieve an equivalent scaling of the functionalities. The introduction of conceptually new devices and paradigms of information processing (Emerging Research Devices) or new materials with unconventional properties (Emerging Research Materials) are viable approaches, as indicated by the International Technology Roadmap of Semiconductors (ITRS), to enhance the functionalities of integrated circuits at the Front-End-Of-Line. The two options investigated to this respect are silicon devices for quantum computation based on a classical Complementary Metal-Oxide-Semiconductor (CMOS) platform and standard Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) based on MoS2 thin film. In particular, the integration of Quantum Information Processing (QIP) in Si would take advantage of Si-based technology to introduce a completely new paradigm of information processing that has the potential to outperform classical computers in some computational tasks, like prime number factoring and the search in a big database. MoS2, conversely, can be exfoliated up to the single layer thickness. Such intrinsic and extreme scalability makes this material suitable for end-of-roadmap ultrascaled electronic devices as well as for other applications in the fields of sensors, optoelectronics and flexible electronics. This work reports on the experimental activity carried out at Laboratory MDM-IMM-CNR in the framework of the PhD school on Nanostructures and Nanotechnology at Università di Milano Bicocca. Electron Beam Lithography (EBL) and mainstream clean-room processing techniques have been intensively utilized to fabricate CMOS devices for QIP on the one hand and to integrate mechanically exfoliated MoS2 flakes in a conventional FET structure on the other hand. After a careful calibration and optimization of the process parameters, several different Quantum Dot (QD) configurations were designed and fully realized, achieving critical dimensions under 50 nm. Such device architectures were developed on a Silicon-On-Insulator (SOI) platform, in order to eventually access a straightforward integration into the CMOS mainstream technology. Si-QDs and donor-based devices have been then tested by electrical characterization techniques at cryogenic temperatures down to 300 mK. In detail, single electron tunneling events on a donor atom have been controlled by pulsed-gate techniques in high magnetic fields up to 8T, providing a preliminary characterization for the initialization procedure of donor qubits. The control of the charge states of Si-QDs have been also demonstrated by means of stability diagrams as well as the analysis of random telegraph noise arising from single electron tunneling between two QDs. Finally, a feasibility study for the large scale integration of quantum information processing was done based on a double QD hybrid qubit architecture. On the other side, MoS2 thin film transistors have been made by mechanical exfoliation of crystalline MoS2 and electrodes definition by EBL. Electrical characterization was performed on such devices, with a particular focus on the electrical transport in a FET device and on the spectroscopy of interface traps, that turns out to be a limiting factor for the logic operation.
Jaouen, Kévin. "Backside absorbing layer microscopy : a new tool for the investigation of 2D materials." Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS296/document.
Повний текст джерелаOptical microscopy based on anti-reflective coatings is a simple yet powerful characterization tool which notably allowed the first observation of graphene in 2004. Since then, the field of two-dimensional (2D) materials has developed rapidly both at the fundamental and applied levels. These ultrathin materials present inhomogeneities (edges, grain boundaries, multilayers, etc.) which strongly impact their physical and chemical properties. Thus their local characterization is essential. This thesis focuses on a recent enhanced-contrast optical microscopy technique, named BALM, based on ultrathin (2-5 nm) and strongly light-absorbing (metallic) anti-reflective layers. The goal is notably to evaluate the benefits of this technique for the study of 2D materials and their chemical reactivity. The various levers to improve 2D materials observation were investigated and optimized for two model materials: graphene oxide and MoS₂ monolayers. The investigation of molecular layer deposition dynamic notably showed the extreme sensitivity of BALM for such measurements and the significant contribution of multilayers anti-reflective coatings to enhance contrast during the observation of 2D materials. One of the main assets of BALM comes from its combination to other techniques. We particularly considered the coupling between optical measurements and electrochemistry for which the anti-reflective layer serves as working electrode. We investigated optically the dynamic of electrochemical reduction of Graphene Oxide (GO), the electrografting of organic layers by diazonium salts reduction on GO and its reduced form (rGO), as well as the intercalation of metallic ions within GO sheets. By combining versatility and high-contrast, BALM is established as a promising tool for the study of 2D materials, especially for the local and in situ characterization of their chemical and electrochemical reactivity
Biasco, Simone. "Photonic engineering of CW, ultrabroad gain, aperiodic quantum cascade lasers at terahertz frequencies integrations with 2D materials and study of the optical mode dynamics." Doctoral thesis, Scuola Normale Superiore, 2019. http://hdl.handle.net/11384/85908.
Повний текст джерелаUllberg, Nathan. "Field-effect transistor based biosensing of glucose using carbon nanotubes and monolayer MoS2." Thesis, Uppsala universitet, Molekyl- och kondenserade materiens fysik, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-397719.
Повний текст джерелаEU Horizon 2020 - SmartVista (825114)
Bandyopadhyay, Avra Sankar. "Light Matter Interactions in Two-Dimensional Semiconducting Tungsten Diselenide for Next Generation Quantum-Based Optoelectronic Devices." Thesis, University of North Texas, 2020. https://digital.library.unt.edu/ark:/67531/metadc1752376/.
Повний текст джерелаPrasad, Parmeshwar. "Parametric Manipulation in 2D Material based NEMS Resonators." Thesis, 2018. https://etd.iisc.ac.in/handle/2005/4669.
Повний текст джерелаDuarte, Henrique Manuel Sousa. "The material non linear analysis of 2D strutures using a radial point interpolation method." Dissertação, 2014. https://repositorio-aberto.up.pt/handle/10216/84114.
Повний текст джерелаDuarte, Henrique Manuel Sousa. "The material non linear analysis of 2D strutures using a radial point interpolation method." Master's thesis, 2014. https://repositorio-aberto.up.pt/handle/10216/84114.
Повний текст джерелаKuruva, Hemanjaneyulu. "Addressing the Performance and Reliability Bottlenecks in 2D Transition Metal Dichalcogenide (TMD) Based Transistor Technology." Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5716.
Повний текст джерелаКниги з теми "2D material technology"
Rogalski, Antoni. 2d Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2022.
Знайти повний текст джерелаRogalski, Antoni. 2D Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2020.
Знайти повний текст джерела2D Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2020.
Знайти повний текст джерелаRogalski, Antoni. 2d Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2020.
Знайти повний текст джерела2D Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2020.
Знайти повний текст джерелаRogalski, Antoni. 2D Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2020.
Знайти повний текст джерелаBanks, Craig E., and Dale A. C. Brownson. 2d Materials. Taylor & Francis Group, 2021.
Знайти повний текст джерелаHoussa, Michel, Alessandro Molle, and A. Dimoulas. 2d Materials for Nanoelectronics. Taylor & Francis Group, 2021.
Знайти повний текст джерелаDimoulas, Athanasios, Michel Houssa, and Alessandro Molle. 2D Materials for Nanoelectronics. Taylor & Francis Group, 2016.
Знайти повний текст джерелаKumar, Santosh, Sanjeev Kumar Raghuwanshi, and Yadvendra Singh. 2D Materials for Surface Plasmon Resonance-Based Sensors. Taylor & Francis Group, 2021.
Знайти повний текст джерелаЧастини книг з теми "2D material technology"
Rawat, Ankita, and P. K. Kulriya. "2D/3D Material for Gas Sensor." In Smart Nanostructure Materials and Sensor Technology, 161–78. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2685-3_8.
Повний текст джерелаTiwari, Ram Chandra, and Netra Prakash Bhandary. "Application of Spectral Element Method (SEM) in Slope Instability Analysis." In Progress in Landslide Research and Technology, Volume 1 Issue 1, 2022, 163–74. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-16898-7_11.
Повний текст джерелаIkram, Muhammad, Ali Raza, and Salamat Ali. "Advances in Ultrathin 2D Materials." In Nanostructure Science and Technology, 11–29. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-96021-6_2.
Повний текст джерелаYue, Xianfang. "Effect of translation energy on the reaction N(2D) + D2(v = 0, j = 0)." In Advances in Materials Science, Energy Technology and Environmental Engineering, 375–78. P.O. Box 11320, 2301 EH Leiden, The Netherlands, e-mail: Pub.NL@taylorandfrancis.com , www.crcpress.com – www.taylorandfrancis.com: CRC Press/Balkema, 2016. http://dx.doi.org/10.1201/9781315227047-74.
Повний текст джерелаAlharbi, Abdullah, Naif Alshamrani, Hadba Hussain, Mohammed Alhamdan, and Salman Alfihed. "Two-Dimensional Materials for Terahertz Emission." In Trends in Terahertz Technology [Working Title]. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.110878.
Повний текст джерелаIkram, Muhammad, Ali Raza, Khurram Shahzad, Ali Haider, Junaid Haider, Abdullah Khan Durrani, Asim Hassan Rizvi, Asghari Maqsood, and Mujtaba Ikram. "Advanced Carbon Materials: Base of 21st Century Scientific Innovations in Chemical, Polymer, Sensing and Energy Engineering." In Sol Gel and other Fabrication Methods of Advanced Carbon Materials [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.95869.
Повний текст джерелаRaja, Vithaldas, and Ramesh Mohan Thamankar. "Resistive Switching and Hysteresis Phenomena at Nanoscale." In Electric Field in Advancing Science and Technology [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.101500.
Повний текст джерелаSaini, Ayushi, Anil Ohlan, S. K. Dhawan, and Kuldeep Singh. "Nanostructured Two-Dimensional (2D) Materials as Potential Candidates for EMI Shielding." In Smart Materials Design for Electromagnetic Interference Shielding Applications, 465–526. BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/9789815036428122010014.
Повний текст джерелаR., Muthuminal. "An Overview on 3D Site Modelling in Civil Engineering." In Recent Advances in 3D Imaging, Modeling, and Reconstruction, 108–27. IGI Global, 2020. http://dx.doi.org/10.4018/978-1-5225-5294-9.ch005.
Повний текст джерелаElemans, P. H. M. "Polymer Twin Screw Extrusion: 2D Modeling." In Encyclopedia of Materials: Science and Technology, 7540–43. Elsevier, 2001. http://dx.doi.org/10.1016/b0-08-043152-6/01348-6.
Повний текст джерелаТези доповідей конференцій з теми "2D material technology"
Maiti, Rishi, Xie Ti, Hao Wang, Rubab Amin, Chandraman Patil, and Volker J. Sorger. "2D Material based Electro-Absorption Modulator in Si Photonics." In CLEO: Applications and Technology. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/cleo_at.2020.af2i.3.
Повний текст джерелаKoester, Steven J. "Contacts for 2D-Material MOSFETs: Recent Advances and Outstanding Challenges." In 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2023. http://dx.doi.org/10.1109/edtm55494.2023.10103009.
Повний текст джерелаKoppens, Frank. "Quantum plasmonics, polaritons and strong light-matter interactions with 2d material heterostructures." In CLEO: Applications and Technology. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/cleo_at.2017.jw1g.1.
Повний текст джерелаBrems, Steven, Souvik Ghosh, Quentin Smets, Marie-Emmanuelle Boulon, Andries Boelen, Koen Kennes, Hung-Chieh Tsai, et al. "Overview of scalable transfer approaches to enable epitaxial 2D material integration." In 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT). IEEE, 2023. http://dx.doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134381.
Повний текст джерелаSchubert, Martin, Zahra Fekri, Thomas Ackstaller, Yagnika Vekariya, Krzysztof Nieweglowski, Artur Erbe, and Karlheinz Bock. "Characterization of gas permeability of polymer membranes for encapsulation of 2D-material sensors." In 2021 44th International Spring Seminar on Electronics Technology (ISSE). IEEE, 2021. http://dx.doi.org/10.1109/isse51996.2021.9467627.
Повний текст джерелаLiang, Gengchiau. "Device Performance of 2D Layered Material Transistors and Their Challenges: A Theoretical Study." In 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM). IEEE, 2018. http://dx.doi.org/10.1109/edtm.2018.8421444.
Повний текст джерелаIslam, Md Sherajul, Md Rayid Hasan Mojumder, Asif Hassan, Minhaz Uddin Sohag, and Jeongwon Park. "High-Efficiency Multi Quantum Well Blue LED Using 2D-SiC as an Active Material." In 2021 5th International Conference on Electrical Engineering and Information Communication Technology (ICEEICT). IEEE, 2021. http://dx.doi.org/10.1109/iceeict53905.2021.9667843.
Повний текст джерелаBrandner, M., T. Thurner, G. Kukutschki, and N. Enzinger. "Optical 2D Displacement and Strain Sensor for Creep Testing of Material Samples in Transparent Fluids." In 2008 IEEE Instrumentation and Measurement Technology Conference - I2MTC 2008. IEEE, 2008. http://dx.doi.org/10.1109/imtc.2008.4547265.
Повний текст джерелаSaini, Shalu, Anurag Dwivedi, Anil Lodhi, Arpit Khandelwal, and Shree Prakash Tiwari. "Flexible Forming Free Resistive Memory Device with 2D Material $\text{MoSe}_{2}$ as Switching Layer." In 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2023. http://dx.doi.org/10.1109/edtm55494.2023.10103025.
Повний текст джерелаChhipa, Mayur Kumar, and Massoudi Radhouene. "Scatterer rod radius analysis in 2D photonic crystal structure based channel drop filter using InP material." In 2016 IEEE Conference on Recent Advances in Lightwave Technology (CRALT). IEEE, 2016. http://dx.doi.org/10.1109/cralt.2016.8066035.
Повний текст джерела