Добірка наукової літератури з теми "(111) Si"
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Статті в журналах з теми "(111) Si"
Pervan, P., K. Markert, and K. Wandelt. "Photoemission of Xe adsorbed on Si(111)7×7, Ag/Si(111), Au/Si(111) and O/Si(111) surfaces." Applied Surface Science 108, no. 3 (March 1997): 307–17. http://dx.doi.org/10.1016/s0169-4332(96)00684-8.
Повний текст джерелаБессолов, В. Н., Е. В. Коненкова, T. А. Орлова та С. Н. Родин. "Начальные стадии роста полуполярного AlN на наноструктурированной Si(100) подложке". Физика и техника полупроводников 55, № 10 (2021): 908. http://dx.doi.org/10.21883/ftp.2021.10.51442.41.
Повний текст джерелаStesmans, A. "The .Si identical to Si3defect at various (111)Si/SiO2and (111)Si/Si3N4interfaces." Semiconductor Science and Technology 4, no. 12 (December 1, 1989): 1000–1011. http://dx.doi.org/10.1088/0268-1242/4/12/005.
Повний текст джерелаMichel, E. G., Th Pauly, V. Eteläniemi, and G. Materlik. "Adsorption of I on Si(111) and Si(110) surfaces." Surface Science 241, no. 1-2 (January 1991): 111–23. http://dx.doi.org/10.1016/0039-6028(91)90216-f.
Повний текст джерелаMichel, E. G., Th Pauly, V. Eteläniemi, and G. Materlik. "Adsorption of I on Si(111) and Si(110) surfaces." Surface Science Letters 241, no. 1-2 (January 1991): A5. http://dx.doi.org/10.1016/0167-2584(91)91060-a.
Повний текст джерелаInoue, Takahiro, Youya Wagatsuma, Reo Ikegaya, Ayaka Odashima, Masaki Nagao, and Kentarou Sawano. "(Digital Presentation) Epitaxially Grown of SiGe on Ge Microbridge and Observation of Strong Resonant Light Emission." ECS Transactions 109, no. 4 (September 30, 2022): 297–302. http://dx.doi.org/10.1149/10904.0297ecst.
Повний текст джерелаWeilmeier, M. K., W. H. Rippard, and R. A. Buhrman. "Ballistic electron transport through Au(111)/Si(111) and Au(111)/Si(100) interfaces." Physical Review B 59, no. 4 (January 15, 1999): R2521—R2524. http://dx.doi.org/10.1103/physrevb.59.r2521.
Повний текст джерелаKoryakin, Alexander A., Sergey A. Kukushkin, Andrey V. Osipov, Shukrillo Sh Sharofidinov, and Mikhail P. Shcheglov. "Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates." Materials 15, no. 18 (September 6, 2022): 6202. http://dx.doi.org/10.3390/ma15186202.
Повний текст джерелаKochanski, Greg P., and R. F. Bell. "STM measurements of photovoltage on Si(111) and Si(111):Ge." Surface Science 273, no. 1-2 (June 1992): L435—L440. http://dx.doi.org/10.1016/0039-6028(92)90266-9.
Повний текст джерелаHartmann, J. M., M. Burdin, G. Rolland, and T. Billon. "Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces." Journal of Crystal Growth 294, no. 2 (September 2006): 288–95. http://dx.doi.org/10.1016/j.jcrysgro.2006.06.043.
Повний текст джерелаДисертації з теми "(111) Si"
Hadley, M. J. "Scanning tunnelling microscopy of Si(111), Pb-Si(111) and Si(113)." Thesis, University of York, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.316178.
Повний текст джерелаPettus, Kharissia A. "Abstraction on Si (111)-7x7 and Al(111) /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2000. http://wwwlib.umi.com/cr/ucsd/fullcit?p9974118.
Повний текст джерелаNazir, Z. H. "Surface magnetism of Fe/Si(111) and Fe/Si(100)." Thesis, University of Sussex, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.362272.
Повний текст джерелаGregoratti, Luca. "Scanning photoemission microscopy of the silicide phases formed in Ni/Si(111) and Ni+Au/Si(111) systems." Thesis, King's College London (University of London), 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.401781.
Повний текст джерелаMikhail, Hanna Degani. "Análise teórica da superfície Si(111)-(7x7)." Universidade Federal de Uberlândia, 2007. https://repositorio.ufu.br/handle/123456789/15681.
Повний текст джерелаNeste trabalho, realizamos o estudo teórico da reconstrução (7x7) da superfície de Silício crescida na direção [111], denotada por Si(111) (7x7), utilizando para isto o formalismo da Teoria do Funcional da Densidade, com a Aproximação da Densidade Local (LDA - LocalDensityApproximation) para o termo de troca correlação. A interação entre os elétrons de valência e o íon de caroço (núcleo mais os elétrons de caroço) foi descrita por meio da Teoria dos Pseudopotenciais não locais de norma conservada, compativel com a LDA. As equações de Kohn Sham de um elétron foram resolvidas autoconsistentemente, expandindo as funções de um elétronemtermos de combinação linear de orbitais atômico numéricos, com base double . Todos os cálculos foram realizados utilizando o código computacional Siesta. Utilizando o modelo de reconstrução da superfície livre de Si(111) (7x7), proposto por Takayanagi et al.[1, 2], modelamos a superfície como um slab, cuja célula unitária (7x7) contém 200 átomos de Si distribuidos em uma camada de adatoms (átomos de Si adsorvidos sobre a superfície propriamente dita) e quatro outras camadas, além dos 49 átomos de H usados para saturar as ligações pendentes da camada mais interna ao material. A análise estrutural da superfície reconstruída Si(111) (7x7) e a análise da estrutura eletrônica mostrou ótima concordância tanto com trabalhos experimentais quanto teóricos, reproduzindo corretamente a estrutura de bandas, os níveis de superfície e o caráter metálico desta superfície. A energia obtida em nosso cálculo por átomo da superfície, com relação à energia bulk, foi de 1,132 eV. Foi feito o estudo da energia de formação de vacâncias do tipo adatom. Encontramos um valor médio de 1,2 eV para a formação de uma única vacância do tipo adatom na superfície Si(111) (7x7). A análise da estrutura de bandas do sistema com vacância possibilitou identificar os estados eletrônicos devido às ligações pendentes dos adatoms. Como uma primeira aplicação dos resultados obtidos para a superfície livre de Si(111) (7x7), investigamos possíveis estados de fisiossorção de moléculas de clorobenzeno sobre sítios específicos sobre a superfície de Si(111) (7x7). Este estudo mostrou que as moléculas de clorobenzeno interagem com a superfície para distâncias de aproximadamente 3,0 Å dos adatoms. Também inferimos que sítios da subunidade triangular faulted são mais favoráveis à adsorção do que sítios correspondentes sobre a subunidade triangula unfaulted. Levantamos a curva da energia de adsorção do clorobenzeno sobre o adatom de canto da subunidade triangular faulted da célula unitária (7x7). A distância de equilíbrio e a energia de adsorção obtidas foram 3,005 Å e 0,161 eV, respectivamente. A ordem de grandeza desta interação corresponde a uma adsorção física da molécula de clorobenzeno sobre a superfície Si(111) (7x7).
Mestre em Física
Mathieu, Gilles. "Étude des interfaces métal noble-semiconducteur : cu/si(111) et au/si(111) par différentes techniques d'analyse de surface." Aix-Marseille 2, 1987. http://www.theses.fr/1987AIX22072.
Повний текст джерелаWetzel, Patrick. "Etude de l'interface Cr/Si (111) par photoémission angulaire et diffraction d'électrons lents : épitaxie des siliciures Cr Si et Cr Si2 sur Si (111)." Mulhouse, 1988. http://www.theses.fr/1988MULH0077.
Повний текст джерелаSpence, David John. "STM and MEIS studies of the Ag/Ge(111) and Pb/Si(111) systems." Thesis, University of York, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.286036.
Повний текст джерелаReis, Roberto Moreno Souza dos. "Síntese de SiC por implantação iônica de carbono em SIMOX(111) e Si(111)." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2009. http://hdl.handle.net/10183/16135.
Повний текст джерелаSiC is a promising semiconductor for high-power, high-frequency and hightemperature electronic devices and the synthesis of an epitaxial layer of SiC by implantation, on the surface of Si, can be a route for integration with the Si technology. High temperature implantation (600oC) through a SiO2 cap, 1250oC post-implantation annealing under Ar ambient (with 1% of O2), and chemical etching are the base for the present synthesis. 40 keV carbon implantations were performed into SIMOX(111) and Si(111) substrates covered with a 100 nm SiO2 cap. Implantation into SIMOX was the main focus. It has allowed us to obtain a SiC synthesized layer separated from the bulk silicon and to analyze the structural consequences. In this case, it was performed the conversion of a 65 nm Si(111) overlayer of a SIMOX(111) into 30-45 nm SiC. Sequential C implantations (fluence steps of about 5 × 1016 C/cm2), followed by 1250oC annealing, has allowed to estimate the minimum C fluences to reach the stoichiometric composition as 2.3 × 1017 C/cm2 and 2.8 × 1017 C/cm2, when implanting into SIMOX and into Si, respectively. Rutherford Backscattering Spectrometry (RBS) was employed to measure layer composition evolution. By analyzing the sequential implantations it was possible to understand the carbon redistribution during implantation and annealing. A two-sublayers structure is observed in the synthesized SiC separated from the bulk Si, being the superficial one richer in Si. Transmission Electron Microscopy (TEM) has shown that the synthesized layers are always cubic and epitaxial to the original Si structure. TEM also show that single-step implantations, up to the minimum fluences, result in better structural quality. For a much higher C fluence (4 × 1017 C/cm2), a whole stoichiometric layer is obtained, with reduction of structural quality. Our results indicate that excess of carbon content is the major detrimental factor to determine the final crystalline quality in SiC ion beam synthesis, as compared to the stress, resulting from a forced lattice matching between the Si substrate and the synthesized SiC.
Anderson, Sarah. "Second-harmonic generation as a probe of chemically modified Si(111) surfaces and the initial oxidation of hydrogen terminated Si(111)." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/MQ59270.pdf.
Повний текст джерелаКниги з теми "(111) Si"
Terakawa, Shigemi. Structure and Electronic Properties of Ultrathin In Films on Si(111). Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-6872-3.
Повний текст джерелаStolwijk, Sebastian David. Spin-Orbit-Induced Spin Textures of Unoccupied Surface States on Tl/Si(111). Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-18762-4.
Повний текст джерелаA mi tuo fo: Chang jian 111 zun fo de zhi si yu bai qiu fa. Chongqing: Chongqing chu ban she, 2009.
Знайти повний текст джерелаLamdu heṭev: ʻezer le-limud, le-shinun ṿela-ḥazarah : ʻal Yoreh deʻah ḥ. 1., Hilkhot baśar be-ḥalav ṿe-taʻarovot, si. 87-111. Spring Valley, NY: T. Schlesinger, 2010.
Знайти повний текст джерелаSchlesinger, T. Sefer Limdu heṭev: ʻezer le-limud, le-shinun ṿela-ḥazarah : ʻal Yoreh deʻah ḥ. 1, Hilkhot baśar be-ḥalav ṿe-taʻarovot, si. 67-111 ... : ʻIyun heṭev ... Ṿe-darashta heṭev ... Monsi--Spring Ṿali, N.Y: Ṭoviy. ben Yeshaʻy. Shlezinger, 2010.
Знайти повний текст джерелаJefferson, Thomas A., James G. Mead, and Carl C. Kinze. Nomenclature of the Larger Toothed Whales (Odontocetes): A Historical Review. Washington, D.C.: Smithsonian Institution Scholarly Press, 2023. http://dx.doi.org/10.5479/si.21954029.
Повний текст джерелаMalatrait, Solveig Kristina. "Si fier tornei": Benoîts ,Roman de Troie' und die höfische Kultur des 12. Jahrhunderts. Hamburg: Hamburg University Press, 2011.
Знайти повний текст джерелаAmoyal, Yiśraʼel. Sefer Horaʼah berurah: ʻal Shulḥan ʻarukh Yoreh deʻah : beʼur divre Maran ṿeha-Rama, z.y. ʻa. a., ṿe-asefat dinim (kolel sheʼelot aḳṭuʼaliyot), lefi minhage ha-Sefaradim ṿeha-Ashkenazim ... si. 98-111, Hilkhot taʻarovot. Bene Beraḳ: Mekhon ha-Rav Matsliaḥ, 2012.
Знайти повний текст джерелаJiaying, Lin, and Park Jongsung, eds. 101 ge bu ke si yi. Taibei Shi: Fei bao guo ji wen hua gu fen you xian gong si, 2005.
Знайти повний текст джерелаLi Yu mei xue si xiang yan jiu. Beijing: Zhongguo she hui ke xue chu ban she, 1998.
Знайти повний текст джерелаЧастини книг з теми "(111) Si"
Esser, N., and E. Speiser. "Clean Si(111)." In Physics of Solid Surfaces, 569–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-53908-8_136.
Повний текст джерелаEsser, N., and E. Speiser. "As-terminated Si(111)." In Physics of Solid Surfaces, 585–87. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-53908-8_139.
Повний текст джерелаEsser, N., and E. Speiser. "In-terminated Si(111)." In Physics of Solid Surfaces, 588–93. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-53908-8_140.
Повний текст джерелаEsser, N., and E. Speiser. "Au-terminated Si(111)." In Physics of Solid Surfaces, 594–96. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-53908-8_141.
Повний текст джерелаShkrebtii, A., F. Filippone, and A. Fasolino. "Homopolar cubic semiconductors: clean silicon surfaces Si(100), Si(110), and Si(111)." In Physics of Solid Surfaces, 85–94. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-53908-8_16.
Повний текст джерелаChiaradia, P. "8.2.2.1.8 Si(111)-(2×1)." In Physics of Solid Surfaces, 479–80. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-47736-6_126.
Повний текст джерелаChiaradia, P. "8.2.2.1.9 Si(111)-(7×7)." In Physics of Solid Surfaces, 481–83. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-47736-6_127.
Повний текст джерелаYasunaga, H., and Nan-Jian Wu. "Hetero-electromigration on Stepped Si(111)." In Ordering at Surfaces and Interfaces, 263–72. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84482-9_29.
Повний текст джерелаMönch, Winfried. "Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces." In Semiconductor Surfaces and Interfaces, 219–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-662-04459-9_11.
Повний текст джерелаMönch, Winfried. "Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces." In Semiconductor Surfaces and Interfaces, 174–89. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-662-02882-7_11.
Повний текст джерелаТези доповідей конференцій з теми "(111) Si"
Yang, J. M., J. W. Kim, A. Wilke, O. Seifarth, and T. Schroeder. "Interface analysis of epi-Si(111)/Y2O3/Pr2O3/Si(111) heterostructures." In 2011 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2011). IEEE, 2011. http://dx.doi.org/10.1109/ipfa.2011.5992761.
Повний текст джерелаHanda, H., R. Takahashi, S. Abe, K. Imaizumi, M. H. Jung, S. Ito, H. Fukidome, and M. Suemitsu. "TEM characterization of epitaxial graphene formed on Si(111), Si(110), Si(100)." In 2010 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2010. http://dx.doi.org/10.7567/ssdm.2010.h-2-4.
Повний текст джерелаMoraru, D., H. Kato, S. Horiguchi, Y. Ishikawa, H. Ikeda, and M. Tabe. "Fowler-Nordheim current oscillations in Si(111)/SiO2/twisted-Si(111) tunneling structures." In 2005 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2005. http://dx.doi.org/10.7567/ssdm.2005.g-2-8.
Повний текст джерелаAOTO, Nahomi, Eiji IKAWA, and Yukinori KUROGI. "Electron Spectroscopy Study of CI/Si Reaction on Si(111), Si(100) and Si(110) Surfaces." In 1987 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1987. http://dx.doi.org/10.7567/ssdm.1987.s-iii-11.
Повний текст джерелаGALKIN, N. G., A. M. MASLOV, S. I. KOSIKOV, A. O. TALANOV, and K. N. GALKIN. "MORPHOLOGY AND OPTICAL PROPERTIES OF Si(111)/CrSi2/Si AND Si(111)/Mg2Si/Si SYSTEMS WITH SELF-ORGANIZED QUANTUM DOTS." In Reviews and Short Notes to NANOMEETING-2001. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812810076_0033.
Повний текст джерелаTerai, Y., H. Hoshida, R. Kinoshita, A. Shevlyagin, I. Chernev, and A. Gouralnik. "Photoreflectance Spectra of Highly-oriented Mg2Si(111)//Si(111) Films." In The 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019). Japan Society of Applied Physics, 2020. http://dx.doi.org/10.7567/jjapcp.8.011004.
Повний текст джерелаGalkin, N. G., S. A. Dotsenko, K. N. Galkin, L. Dózsa, I. Cora, and B. Pécz. "Epitaxial relations, crystalline structure and defects in the double Si(111)/hR6 CaSi2/Si(111) heterostructures." In Asia-Pacific Conference on Semiconducting Silicides and Related Materials (APAC Silicide 2016). Japan Society of Applied Physics, 2017. http://dx.doi.org/10.7567/jjapcp.5.011403.
Повний текст джерелаGALKIN, N. G., D. L. GOROSHKO, A. S. GOURALNIK, V. O. POLYARNYI, S. V. VAVANOVA та I. V. LOUCHANINOV. "SILICON GROWTH ATOP β-FeSi2 ISLANDS ON Si(111) SUBSTRATE AND Si(111)-Cr SURFACE PHASES". У Reviews and Short Notes to Nanomeeting-2005. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812701947_0034.
Повний текст джерелаXu, Run, Jiaming Xie, Minyan Tang, Yanyan Zhu, and Lin-jun Wang. "The growth of Si overlayers on Er 2 O 3 (111)/Si (111) by solid phase epitaxy." In Seventh International Conference on Thin Film Physics and Applications, edited by Junhao Chu and Zhanshan Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.888362.
Повний текст джерелаAIZAWA, Koji, Tatsuya ICHIKI, and Hiroshi ISHIWARA. "Ferroelectric Properties of BaMgF4 Films Grown on Si(100), (111), and Pt(111)/SiO2/Si(100) Structures." In 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.s-i-10-4.
Повний текст джерелаЗвіти організацій з теми "(111) Si"
Stanley, M. K. RHEED studies of vicinal Si(111) surfaces and Ag films grown on Si(111). Office of Scientific and Technical Information (OSTI), February 1998. http://dx.doi.org/10.2172/671996.
Повний текст джерелаCALIFORNIA UNIV SANTA BARBARA. Lateral Epitaxial Overgrowth of GaN on Si(111). Fort Belvoir, VA: Defense Technical Information Center, September 1998. http://dx.doi.org/10.21236/ada353896.
Повний текст джерелаShuh, David K., Robert M. Charatan, Richard S. Daley, and R. S. Williams. Growth and Reactivity of CuCl on Si(111). Fort Belvoir, VA: Defense Technical Information Center, July 1990. http://dx.doi.org/10.21236/ada225034.
Повний текст джерелаBelianinov, Aleksey. Ag on Si(111) from basic science to application. Office of Scientific and Technical Information (OSTI), January 2012. http://dx.doi.org/10.2172/1048520.
Повний текст джерелаWallace, R. M., P. A. Taylor, M. J. Dresser, W. J. Choyke, J. T. Yates, and Jr. Background Effects in ESDIAD Measurements on Si(111)-(7x7). Fort Belvoir, VA: Defense Technical Information Center, May 1990. http://dx.doi.org/10.21236/ada222242.
Повний текст джерелаKoehler, Ulrich. RHEED studies of Ag/Si(111) growth at low temperatures. Office of Scientific and Technical Information (OSTI), January 1996. http://dx.doi.org/10.2172/215802.
Повний текст джерелаVitkavage, Susan C., Eugene A. Irene, and Hisham Z. Massoud. An Investigation of Si-SiO2 Interface Charges in Thermally Oxidized (100), (110), (111), (511) Silicon. Fort Belvoir, VA: Defense Technical Information Center, December 1990. http://dx.doi.org/10.21236/ada231244.
Повний текст джерелаPaggel, J. J., M. Hasselblatt, and K. Horn. Detection of subsurface core-level shifts in Si 2p core-level photoemission from Si(111)-(1x1):As. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/603503.
Повний текст джерелаCahill, David G., and R. J. Hamers. Surface Photovoltage of Ag on Si(111)-7X7 by Scanning Tunneling Microscopy. Fort Belvoir, VA: Defense Technical Information Center, May 1991. http://dx.doi.org/10.21236/ada236971.
Повний текст джерелаKaloyeros, A., S. Endisch, and A. Topol. Metal-Organic Chemical Vapor Epitaxy of GaN on Si(111) for Optoelectronic Applications. Fort Belvoir, VA: Defense Technical Information Center, September 1998. http://dx.doi.org/10.21236/ada353993.
Повний текст джерела