Готові списки джерел за темами / 1/f noise spectroscopy

Добірка наукової літератури з теми "1/f noise spectroscopy"

Автор: Grafiati
Опубліковано: 6 вересня 2023
Оновлено: 7 вересня 2023

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Статті в журналах з теми "1/f noise spectroscopy"

1

Kale, Uma, and Edward Voigtman. "Gated Integration of Transient Signals in 1/f Noise." Applied Spectroscopy 46, no. 11 (November 1992): 1636–43. http://dx.doi.org/10.1366/0003702924926916.

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The Mueller optical calculus is used to model common spectrometric experimental schemes. The effects of source and preamplifier noise on the precision of the measurement are investigated, and the effect of gate width variation for gated integration of Gaussian signal peaks in the presence of white or 1/ f type noise is evaluated. The results indicate that, for integration of a transient absorbance signal, the choice of gate width depends upon the type of noise, but not its source. For a transmittance (or emission) type of experiment, both the type and the source of the noise determine the gate width to be used for integration of the signal.
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2

Kawahara, Toshio, Satarou Yamaguchi, Yasuhide Ohno, Kenzo Maehashi, Kazuhiko Matsumoto, Shin Mizutani, and Kenji Itaka. "Diameter dependence of 1/f noise in carbon nanotube field effect transistors using noise spectroscopy." Applied Surface Science 267 (February 2013): 101–5. http://dx.doi.org/10.1016/j.apsusc.2012.08.003.

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3

Achtenberg, Krzysztof, Janusz Mikołajczyk, Zbigniew Bielecki, and Jacek Wojtas. "Cross-correlation method for noise measurements of photodetectors used for laser absorption spectroscopy." Bulletin of the Military University of Technology 69, no. 4 (December 31, 2020): 73–83. http://dx.doi.org/10.5604/01.3001.0015.3826.

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The paper presents noise measurements of low-resistance photon detectors with a specially developed system. These measurements are significant for many applications. This issue is particularly critical for laser absorption spectroscopy systems to detect trace amounts of gases. In these systems, the detection limit is determined by noise origins, e.g., light source, background, and detector noise and its readout electronics. The use of some specially designed components of the system (low-noise - 3.6 × 10<sub>-19</sub> V<sub>2</sub>/Hz for f >1 kHz) cross-correlation signal processing provides to obtain a measuring floor noise below 10<sub>-18</sub> V<sub>2</sub>/Hz for f > 10 Hz and below 10<sub>-19</sub> V<sub>2</sub>/Hz for f > 1 kHz after ten minutes’ analysis. Measurements of some reference resistors have verified the system’s performance. Finally, the system was also applied to determine the spectral noise density of the II -Type SuperLattice photodetector made of InAs / InAsSb.
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4

Kaku, K., A. T. Williams, B. G. Mendis, and C. Groves. "Examining charge transport networks in organic bulk heterojunction photovoltaic diodes using 1/f noise spectroscopy." Journal of Materials Chemistry C 3, no. 23 (2015): 6077–85. http://dx.doi.org/10.1039/c5tc00348b.

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In this article we present 1/f noise spectroscopy measurements relating to charge transport networks in poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) space-charge limited diode (SCLD) and organic photovoltaic (OPV) devices.
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5

Monnig, Curtis A., and Gary M. Hieftje. "An Investigation of Noise Amplitude Spectra Produced by a Direct-Current Plasma." Applied Spectroscopy 43, no. 5 (July 1989): 742–46. http://dx.doi.org/10.1366/0003702894202283.

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Noise amplitude spectra for direct-current plasma atomic emission spectrometry (DCP-AES) were acquired. Flicker (1/ f) noise dominates the signal at low frequencies, and white noise prevails at higher frequencies. Broad-band audio-frequency (af) noise was observed in the plasma continuum emission when the nebulizer gas was directed into the discharge. By increasing the electrode-gas flows, it was possible to narrow the frequency range and increase the amplitude of this af noise. The introduction of an easily ionized element into the plasma had little effect on the noise characteristics of the source.
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6

Stadler, Adam, and Andrzej Dziedzic. "Virtual instruments in low-frequency noise spectroscopy experiments." Facta universitatis - series: Electronics and Energetics 28, no. 1 (2015): 17–28. http://dx.doi.org/10.2298/fuee1501017s.

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Low-frequency noise spectroscopy (LFNS) is an experimental technique to study noise spectra, typically below 10 kHz, as a function of temperature. Results of LFNS may be presented as the ?so-called? noise maps, giving a detailed insight into fluctuating phenomena in electronic devices and materials. The authors show the usefulness of virtual instrument concept in developing and controlling the measurement setup for LFNS experiments. An example of a noise map obtained for polymer thick-film resistors (PTFRs), made of commercial compositions, for temperature range 77 K - 300 K has been shown. The experiments proved that 1/f noise caused by resistance fluctuations is the dominant noise component in the studied samples. However, the obtained noise map revealed also thermally activated noise sources. Furthermore, parameters describing noise properties of resistive materials and components have been introduced and calculated using data from LFNS. The results of the work may be useful for comparison of noise properties of different resistive materials, giving also directions for improvement of thick-film technology in order to manufacture reliable, low-noise and stable PTFRs.
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7

Lebedev, Alexander A., Vitalii V. Kozlovski, Leonid Fursin, Anatoly M. Strel'chuk, Mikhail E. Levinshtein, Pavel A. Ivanov, and Alexander V. Zubov. "Impact of Proton Irradiation on Power 4H-SiC MOSFETs." Materials Science Forum 1004 (July 2020): 1074–80. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1074.

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Impact of 15 MeV proton irradiation on electrical characteristics and low frequency noise has been studied in high-power vertical 4H-SiC MOSFETs of 1.2 kV-class at doses 1012 £ F £ 1014 cm-2. The maximum value of the field-effect mobility µFЕ depends weakly on F up to F = 2×1013 cm-2. At F = 4×1013 cm-2, the character of the µFЕ(Vg) dependence changes radically. The maximum µFЕ decreases approximately threefold. The dose Fcr corresponding to the complete degradation of the device is about 1014 cm-2. It can be estimated as Fcr» he/n0, where he is the electron removal rate and n0 is the initial electron concentration in the drift layer. In the entire frequency range of analysis f, gate voltages, and drain-source biases, the frequency dependence of the current spectral noise density SI(f) follows the law SI ~ 1/f. From the data of noise spectroscopy, the density of traps in the gate oxide Ntv has been estimated. In non-irradiated structures, Ntv » 5.4×1018 cm-3eV-1. At Ф = 6×1013 cm-2, the Ntv value increases to Ntv » 7.2×1019cm-3eV-1. The non-monotonic behavior of the output current Id and the level of low frequency noise on dose F has been demonstrated.
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8

Stadler, Adam Witold, Zbigniew Zawiślak, Andrzej Dziedzic, and Damian Nowak. "NOISE SPECTROSCOPY OF RESISTIVE COMPONENTS AT ELEVATED TEMPERATURE." Metrology and Measurement Systems 21, no. 1 (March 1, 2014): 15–26. http://dx.doi.org/10.2478/mms-2014-0002.

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Abstract Studies of electrical properties, including noise properties, of thick-film resistors prepared from various resistive and conductive materials on LTCC substrates have been described. Experiments have been carried out in the temperature range from 300 K up to 650 K using two methods, i.e. measuring (i) spectra of voltage fluctuations observed on the studied samples and (ii) the current noise index by a standard meter, both at constant temperature and during a temperature sweep with a slow rate. The 1/f noise component caused by resistance fluctuations occurred to be dominant in the entire range of temperature. The dependence of the noise intensity on temperature revealed that a temperature change from 300 K to 650 K causes a rise in magnitude of the noise intensity approximately one order of magnitude. Using the experimental data, the parameters describing noise properties of the used materials have been calculated and compared to the properties of other previously studied thick-film materials.
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9

Holmberg, Måns, and Nikku Madhusudhan. "Exoplanet spectroscopy with JWST NIRISS: diagnostics and case studies." Monthly Notices of the Royal Astronomical Society 524, no. 1 (July 4, 2023): 377–402. http://dx.doi.org/10.1093/mnras/stad1580.

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ABSTRACT The JWST is ushering in a new era in remote sensing of exoplanetary atmospheres. Atmospheric retrievals of exoplanets can be highly sensitive to high-precision JWST data. It is, therefore, imperative to characterize the instruments and noise sources using early observations to enable robust characterization of exoplanetary atmospheres using JWST-quality spectra. This work is a step in that direction, focusing on the Near Infrared Imager and Slitless Spectrograph (NIRISS) Single Object Slitless Spectroscopy (SOSS) instrument mode, with a wavelength coverage of 0.6–2.8 $\mu$m and R ∼ 700. Using a custom-built pipeline, JExoRES, we investigate key diagnostics of NIRISS SOSS with observations of two giant exoplanets, WASP-39 b and WASP-96 b, as case studies. We conduct a detailed evaluation of the different aspects of the data reduction and analysis, including sources of contamination, 1/f noise, and system properties such as limb darkening. The slitless nature of NIRISS SOSS makes it susceptible to contamination due to background sources. We present a method to model and correct for dispersed field stars that can significantly improve the accuracy of the observed spectra. In doing so, we also report an empirically determined throughput function for the instrument. We find significant correlated noise in the derived spectra, which may be attributed to 1/f noise, and discuss its implications for spectral binning. We quantify the covariance matrix that would enable the consideration of correlated noise in atmospheric retrievals. Finally, we conduct a comparative assessment of NIRISS SOSS spectra of WASP-39 b reported using different pipelines and highlight important lessons for exoplanet spectroscopy with JWST NIRISS.
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10

Busch, Kenneth W., Marianna A. Busch, Renaud Mercier Ythier, and Arvie J. Kuehn. "Design Parameters for an Optimized Flame/Furnace Infrared Emission (FIRE) Radiometer." Applied Spectroscopy 47, no. 12 (December 1993): 2072–80. http://dx.doi.org/10.1366/0003702934066433.

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Several design aspects of an optimized flame/furnace infrared emission (FIRE) radiometer are discussed. For a source in thermal equilibrium, the optimum excitation temperature for CO2 is predicted to be 2500 K, based on the stability of the molecule and the population of excited states as functions of temperature. The influence of spectral bandpass on the magnitude of flame background was studied for several wavelengths within the profile of the 4.4-µm emission band of CO2. For the dispersive FIRE radiometer used in this study, the system was found to be detectornoise limited over the range of spectral bandwidths accessible by the instrument (0.01–0.08 µm). When a hydrogen/air flame was used as the excitation source, the maximum signal-to-background ratio was obtained at 4.40 µm with a spectral bandpass of 0.08 µm. For this same experimental arrangement, a mathematical model was used to predict that the maximum signal-to-noise ratio would occur at 4.40 µm with a spectral bandpass of about 0.25 µm. The influence of chopping frequency on detector noise was determined for two different types of wavelength isolation. When a room-temperature bandpass filter was employed, a modulation frequency of 600–1000 Hz was satisfactory for avoiding 1/ f noise from the PbSe detector. However, when a monochromator was employed, chopping frequencies beyond 1000 Hz produced some additional reduction in 1/ f noise. The specific detectivity for the PbSe detector (6.2 × 108 cm Hz0.5 W−1), calculated from the measured noise at a modulation frequency of 600 Hz, is in good agreement with values reported in the literature for 4.40 µm under the same experimental conditions.
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Дисертації з теми "1/f noise spectroscopy"

1

Hassis, Wala. "Etude de structures avancées pour la détection IR quantique à haute température." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENY013/document.

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La détection IR quantique met classiquement en jeu l'absorption de photons dans le matériau semi-conducteur II-VI CdHgTe. Cet alliage présente la particularité de permettre un ajustage du gap du semi-conducteur aux longueurs d'onde couvrant toute la gamme IR en jouant simplement sur la composition de l'alliage, ce qui en fait un matériau de choix. Cependant,les petits gaps en jeu ici imposent un refroidissement des plans focaux à des températures généralement cryogéniques (typiquement la centaine de Kelvins). Ce refroidissement représente naturellement une limite importante dans l'exploitation, l'encombrement et le coût de tels détecteurs.Un des grands défis à venir dans le domaine de la détection IR quantique est la détection à plus haute température. Une figure de mérite populaire pour examiner le fonctionnement de ces détecteurs est le courant d'obscurité qui reflète son bruit, dans le cas d'un détecteur limité par le bruit de courant (shot noise). Or, du fait des propriétés électriques du matériau semi-conducteur utilisé, ce courant d'obscurité augmente fortement avec le réchauffement du détecteur et rend son utilisation impossible à haute température. De plus, un autre phénomène apparaît également limiter le fonctionnement de nos photo-détecteurs : à hautes températures apparaît du bruit 1/f dont l'origine n'est pas parfaitement comprise aujourd'hui (matériau bulk ou interfaces, le débats reste ouvert…).Ce travail de thèse a pour objectif de comprendre les phénomènes physique régissant le bruit 1/f dans les photodiodes CdHgTe à travers la variation d'un bon nombre de paramètres physique et géométriques en vue de mettre en évidence la ou les corrélations de ce bruit avec ces variantes
The IR sensor makes quantum conventionally involves the absorption of photons in the semiconductor CdHgTe II -VI material . This alloy has a feature to allow an adjustment of the gap of the semiconductor at wavelengths covering the whole IR range by simply varying the composition of the alloy, which makes it a material of choice . However, small gaps at stake here impose a focal cooling to cryogenic temperatures generally planes ( typically hundred Kelvins ) . This cooling naturally represents an important limitation in the operation , the size and cost of such detectors .One of the great challenges ahead in the field of quantum IR detection is the detection at higher temperatures . A figure of merit for popular review the operation of these sensors is the dark current , which reflects its sound , in the case of a noise-limited current ( shot noise) detector. However, because the electrical properties of the semiconductor material used , the dark current increases sharply with the heating of the detector and makes it impossible to use at high temperature . In addition, another phenomenon also appears to limit the functionality of our photo-detectors: high temperature appears on the 1 / f noise whose origin is not fully understood today ( or bulk material interfaces , the debate remains open ... ) .To understand the physical phenomena governing the 1 / f noise in HgCdTe photodiodes through the variation this thesis aims to lots of physical and geometrical parameters in order to highlight the correlations or noise with these variants
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2

Andreev, Alexey. "Šumová spektroskopie detektorů záření." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-233425.

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Kadmium telurid je velmi důležitý materiál jak základního, tak i aplikovaného výzkumu. Je to dáno zejména jeho výhodnými elektronickými, optickými a strukturními vlastnostmi, které ho předurčují pro náročné technické aplikace. Dnes se hlavně používá pro jeho vysoké rozlišení k detekci a X-záření. Hlavní výhodou detektorů na bázi CdTe je, že nepotřebují chlazení a mohou spolehlivě fungovat i při pokojové teplotě. To způsobuje efektivnější interakce fotonů než je tomu u Si nebo jiných polovodičových materiálů. Obsahem této práce byla analýza a interpretace výsledků získaných studiem šumových a transportních charakteristik CdTe vzorků. Měření ukázaly že odpor homogenní části CdTe krystalů mírně klesá při připojení elektrického pole na vzorku. Při změně teploty navíc dochází k odlišné reakci u CdTe typu p a n. Právě těmto efektům je v práci věnována pozornost. Pomocí šumové spektroskopie bylo zjištěno, že při nízkých frekvencích je u vzorků dominantní šum typu 1/f, zatímco při vyšších frekvencích je sledován generačně-rekombinační šum a tepelný šum. Všechny měřené vzorky vykazovaly mnohem vyšší hodnotu šumu na nízkých frekvencích než udává Hoogeova rovnice. Byly nalezeny a popsány zdroje nadbytečného šumu.
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3

Toro, Clemente. "Improved 1/f noise measurements for microwave transistors." [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000371.

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Toro, Clemente Jr. "Improved 1/f Noise Measurements for Microwave Transistors." Scholar Commons, 2004. https://scholarcommons.usf.edu/etd/1271.

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Minimizing electrical noise is an increasingly important topic. New systems and modulation techniques require a lower noise threshold. Therefore, the design of RF and microwave systems using low noise devices is a consideration that the circuit design engineer must take into account. Properly measuring noise for a given device is also vital for proper characterization and modeling of device noise. In the case of an oscillator, a vital part of a wireless receiver, the phase noise that it produces affects the overall noise of the system. Factors such as biasing, selectivity of the input and output networks, and selectivity of the active device (e.g. a transistor) affect the phase noise performance of the oscillator. Thus, properly selecting a device that produces low noise is vital to low noise design. In an oscillator, 1/f noise that is present in transistors at low frequencies is upconverted and added to the phase noise around the carrier signal. Hence, proper characterization of 1/f noise and its effects on phase noise is an important topic of research. This thesis focuses on the design of a microwave transistor 1/f noise (flicker noise) measurement system. Ultra-low noise operational amplifier circuits are constructed and used as part of a system designed to measure 1/f noise over a broad frequency range. The system directly measures the 1/f noise current sources generated by transistors with the use of a transimpedance (current) amplifier. Voltage amplifiers are used to provide the additional gain. The system was designed to provide a wide frequency response in order to determine corner frequencies for various devices. Problems such as biasing filter networks, and load resistances are examined as they have an effect on the measured data; and, solutions to these problems are provided. Proper representation of measured 1/f noise data is also presented. Measured and modeled data are compared in order to validate the accuracy of the measurements. As a result, 1/f noise modeling parameters extracted from the measured 1/f noise data are used to provide improved prediction of oscillator phase noise.
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5

Gesley, Mark Alan. "Spectral analysis of field emission flicker (1/f) noise." Full text open access at:, 1985. http://content.ohsu.edu/u?/etd,85.

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6

Haigh, Mary K. "1/f noise in mercury cadmium telluride semiconductor diodes." Thesis, Heriot-Watt University, 2005. http://hdl.handle.net/10399/200.

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7

Gross, Blaine Jeffrey. "1/f noise in MOSFETs with ultrathin gate dielectrics." Thesis, Massachusetts Institute of Technology, 1992. http://hdl.handle.net/1721.1/13192.

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Анотація:
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1992.
Includes bibliographical references (p. 176-184).
by Blaine Jeffrey Gross.
Ph.D.
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8

Jong, Yeung-dong. "Fiber-optic interferometer for high 1/f noise environments /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

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9

Tobias, David Andrew. "1/f noise and Luttinger liquid phenomena in carbon nanotubes." College Park, Md. : University of Maryland, 2007. http://hdl.handle.net/1903/7334.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2007.
Thesis research directed by: Physics. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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10

Siabi-Shahrivar, Nasser. "A study of 1/f noise in polysilicon emitter transistors." Thesis, University of Southampton, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314728.

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Книги з теми "1/f noise spectroscopy"

1

T, Musha, Sato S, and Yamamoto M, eds. Noise in physical systems and 1/f fluctuations. Tokyo: Ohmsha, 1992.

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2

Ren, Lin. On the origin of 1/f noise in epitaxial GaAs. [S.l: s.n.], 1993.

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3

Mandelbrot, Benoit B. Multifractals and 1/f noise: Wild self-affinity in physics (1963-1976). New York: Springer, 1998.

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4

Dąbrowski, Władysław R. Experimental study on the 1/f noise in surface-barrier particle detectors =: Badania doświadczalne szumów 1/f w detektorach promieniowania jądrowego z barierą powierzchniową. Kraków: Instytut Fizyki i Techniki Jądrowej AGH, 1988.

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5

H, Handel Peter, and Chung Alma L, eds. Noise in physical systems and 1/f fluctuations: St. Louis, MO 1993. New York, NY: American Institute of Physics, 1993.

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6

Mandelbrot, Benoit B. Multifractals and 1/f noise: Wild self-affinity in physics (1963-1976) : selecta volume N. New York: Springer, 1999.

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7

H, Handel Peter, Chung Alma L, and American Institute of Physics, eds. Quantum 1/F noise & other low frequency fluctuations in electronic devices: St. Louis, MO 1992. New York: American Institute of Physics, 1993.

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8

Mandelbrot, Benoit B. Gaussian self-affinity and fractals: Globality, the earth, 1/f noise, and R/S. New York: Springer, 2002.

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9

International Conference on Noise in Physical Systems (10th 1989 Budapest, Hungary). Noise in physical systems: Including 1/f noise, biological systems and membranes : 10th international conference, August 21-25, 1989, Budapest, Hungary. Budapest: Akadémiai Kiadó, 1990.

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10

Van der Ziel Symposium on Quantum 1/f oise and other Low Frequency Fluctuations in Electronic Devices (8th 1998 St. Louis, Mo.). Quantum 1/f noise and other low frequency fluctuations in electronic devices: Seventh symposium : St. Louis, Missouri August 1998. Edited by Handel Peter H, Chung Alma L, and American Institute of Physics. Woodbury, N.Y: AIP Press, 1999.

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Частини книг з теми "1/f noise spectroscopy"

1

Snarskii, Andrei A., Igor V. Bezsudnov, Vladimir A. Sevryukov, Alexander Morozovskiy, and Joseph Malinsky. "Flicker-Noise (1/f-Noise)." In Transport Processes in Macroscopically Disordered Media, 161–80. New York, NY: Springer New York, 2016. http://dx.doi.org/10.1007/978-1-4419-8291-9_13.

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2

Li, Ming. "On 1/f Noise." In Multi-Fractal Traffic and Anomaly Detection in Computer Communications, 29–52. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003354987-3.

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3

Shlesinger, Michael F., and Bruce J. West. "1/f versus 1/f α Noise." In Random Fluctuations and Pattern Growth: Experiments and Models, 320–24. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-2653-0_45.

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4

Wessel-Berg, Tore. "The Enigmatic 1/F Noise." In Electromagnetic and Quantum Measurements, 233–63. Boston, MA: Springer US, 2001. http://dx.doi.org/10.1007/978-1-4615-1603-3_9.

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5

Haartman, Martin von, and Mikael Östling. "1/F Noise in Mosfets." In Low-Frequency Noise In Advanced Mos Devices, 53–102. Dordrecht: Springer Netherlands, 2007. http://dx.doi.org/10.1007/978-1-4020-5910-0_3.

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6

Paladino, E., L. Faoro, G. Falci, and R. Fazio. "1/f Noise in Josephson Qubits." In International Workshop on Superconducting Nano-Electronics Devices, 15–24. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0737-6_3.

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7

Nakahara, Akio. "1/F Noise in Pipe Flow." In Physics of Dry Granular Media, 533–38. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-017-2653-5_38.

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8

Bulgac, Aurel. "1/f -noise in metallic clusters." In Small Particles and Inorganic Clusters, 454–57. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60854-4_107.

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9

Reeder, P. L., R. A. Warner, W. K. Hensley, D. J. Vieira, and J. M. Wouters. "Delayed-Neutron Emission Probabilities of Li-F Nuclides." In Exotic Nuclear Spectroscopy, 535–47. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4615-3684-0_35.

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10

Denk, Georg, David Meintrup, and Stefan Schäffler. "Transient Noise Simulation: Modeling and Simulation of 1/f -Noise." In Modeling, Simulation, and Optimization of Integrated Circuits, 251–67. Basel: Birkhäuser Basel, 2003. http://dx.doi.org/10.1007/978-3-0348-8065-7_16.

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Тези доповідей конференцій з теми "1/f noise spectroscopy"

1

Werle, P., F. Slemr, M. Gehrtz, and C. Brauchle. "High frequency modulation spectroscopy with a lead salt diode laser." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.thnn1.

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Анотація:
High frequency modulation spectroscopy (FM) is a promising tool for high speed and ultrasensitive atmospheric trace gas monitoring. From wideband noise characteristics of a lead salt diode laser a potential sensitivity improvement of 2 orders of magnitude in comparison to conventional derivative (2f) spectroscopy can be derived. This enhancement can be achieved by moving in modulation frequency space from the 1/f-noise dominated region (10 kHz) into a shot noise limited frequency domain at 100 MHz. Ultrasensitive absorption spectroscopy of NO2 was performed with a tunable lead salt diode laser (TDL). With a detection bandwidth of 200 kHz, an optical density of 2.7 × 10−5 was detectable at a signal-to-noise-ratio of 1. The detectable optical density could be further improved by reducing the detection bandwidth in agreement with the √Δf-relationship, reaching 2.5 × 10−6 at a detection bandwidth of 1.56 kHz. This detection limit agrees well with the calculated quantum-limited performance based on the measured laser power, modulation index, and other parameters of the apparatus. These measurements and calculations show that by implementation of the FM technique, the sensitivity of the present TDL absorption spectrometers (TDLAS) can be improved by at least a factor of 10 and possibly even of 100. Such a sensitivity improvement would greatly extend the use of TDLAS for trace gas analysis, especially in atmospheric monitoring.
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2

Rentz, J. H., J. A. Gargas, and C. R. Schwarze. "A Phase-Based Metrology System for Measuring Trace-Gas Concentration." In Laser Applications to Chemical and Environmental Analysis. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/lacea.1998.lmc.5.

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Recent advances in tunable laser diodes and their availability at multiple wavelengths in the near-IR has opened a new era of spectroscopic gas concentration measurement techniques. By adjusting temperature and injection current, the laser diode can be tuned to the wavelength of a molecular resonance of interest, and the absorption can be measured and used to obtain concentration. The injection current can also be modulated, allowing for synchronous detection schemes such as wavelength and frequency modulated spectroscopy (WMS and FMS) which effectively bypass the large 1/f noise component of the laser diode.1-4 In this paper, a new WMS technique is presented which measures phase due to the anomalous dispersion around a resonance for trace gas detection.
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3

Fouks, B. I. "Theory of Single Slow Interface Traps in Submicron Metal-Oxide-Electron Field Effect Transistors (MOSFETs) and Single-Electron Spectroscopy of the Traps." In Chemistry and Physics of Small-Scale Structures. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/cps.1997.csud.4.

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The study of small semiconductor devices has made large contribution to solving the low-frequency 1/f noise problem. Experiments (see review [1]) have shown that the less size of device, the easier to observe that the 1/f current noise consists of the unit acts, which are often called random telegraph signals (RTSs) because of their shape. An RTS represents the jumps of a currents between two fixed levels, the duration of the jumps is instantaneous in practice in comparison to the duration of both states of the current, so the RTS is seen as sequence of the current up and down steps of the same value between high and low current states. The times between two neighboring steps are distributed at random with the mean times of high and low current states being very long. The less the size of the device, the less the number of RTSs observed simultaneously and the higher the relative contribution of each RTS to the total current. In submicron devices under certain conditions it is possible to study a single RTS [2]. RTS is caused by capture and emission of electrons (or holes) by a slow electron trap. Thus the study of an RTS in a small-size device permits to investigate the properties of a single slow trap existing in it. The effect of the external parameters, such as temperature, voltage etc. on RTS is generally much more pronounced than that of the 1/f noise consisting of many RTSs. This is the reason why the study of RTSs in submicron devices has given a new valuable information.
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4

Ruseckas, Julius, and Bronislovas Kaulakys. "Intermittency generating 1/f noise." In 2013 International Conference on Noise and Fluctuations (ICNF). IEEE, 2013. http://dx.doi.org/10.1109/icnf.2013.6578906.

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5

Higuchi, Hisayuki. "1/f Temperature Fluctuations in Solids." In NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005. AIP, 2005. http://dx.doi.org/10.1063/1.2036702.

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6

Izpura, J. I. "1/f Noise Enhancement In GaAs." In NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005. AIP, 2005. http://dx.doi.org/10.1063/1.2036711.

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7

Handel, Peter H., and Hadis Morkoç. "1/f Noise in Schottky diodes." In SPIE OPTO, edited by Jen-Inn Chyi, Yasushi Nanishi, Hadis Morkoç, Joachim Piprek, and Euijoon Yoon. SPIE, 2011. http://dx.doi.org/10.1117/12.876254.

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8

Cable, S., and T. Tajima. "1/f noise in fluid films." In The sixth Van der Zielsymposium on quantum 1/f noise and other low frequency fluctuations in electronic devices. AIP, 1996. http://dx.doi.org/10.1063/1.50890.

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9

Howard, Roy M., and Lahiru A. Raffel. "General models for 1/f noise." In SPIE's First International Symposium on Fluctuations and Noise, edited by M. Jamal Deen, Zeynep Celik-Butler, and Michael E. Levinshtein. SPIE, 2003. http://dx.doi.org/10.1117/12.490145.

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10

Lachinov, A. N., and R. H. Amirkhanov. "1/f noise in electroactive polymer." In International Conference on Science and Technology of Synthetic Metals. IEEE, 1994. http://dx.doi.org/10.1109/stsm.1994.834794.

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Звіти організацій з теми "1/f noise spectroscopy"

1

Fote, A., S. Kohn, E. Fletcher, and J. McDonough. Application of Chaos Theory to 1/f Noise. Fort Belvoir, VA: Defense Technical Information Center, February 1988. http://dx.doi.org/10.21236/ada191150.

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2

Handel, Peter H. Quantum 1/f Noise in High Technology Applications Including Ultrasmall Structures and Devices. Fort Belvoir, VA: Defense Technical Information Center, May 1994. http://dx.doi.org/10.21236/ada292812.

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3

Mercer, Linden B. 1/F Frequency Noise Effects on Self-Heterodyne Linewidth Measurements for Coherent Communications. Fort Belvoir, VA: Defense Technical Information Center, July 1990. http://dx.doi.org/10.21236/ada227942.

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4

VAN DER Ziel, A. Quantum 1/F Noise in Solid State Double Devices, in Particular Hg(1-x) CdxTe Diodes. Fort Belvoir, VA: Defense Technical Information Center, May 1986. http://dx.doi.org/10.21236/ada171438.

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5

Handel, Peter H. Fundamental Quantum 1/F Noise in Ultrasmall Semiconductor Devices and Their Optimal Design Principles. Fort Belvoir, VA: Defense Technical Information Center, May 1988. http://dx.doi.org/10.21236/ada198462.

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6

Ioffe, Lev B., and Lara Faoro. Controlling Decoherence in Superconducting Qubits: Phenomenological Model and Microscopic Origin of 1/f Noise. Fort Belvoir, VA: Defense Technical Information Center, April 2011. http://dx.doi.org/10.21236/ada545158.

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7

Handel, Peter H. Fundamental Quantum 1/F Noise in Ultrasmall Semi Conductor Devices and Their Optimal Design Principles. Fort Belvoir, VA: Defense Technical Information Center, May 1986. http://dx.doi.org/10.21236/ada174512.

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8

Handel, Peter H. International van der Ziel Symposium on Quantum 1/f, 1/f Noise and Other Low Frequency Fluctuations, Mainly in GaN, Quantum or Nanometric Devices (9th) Held in Richmond, Virginia on August 2-4, 2002. Fort Belvoir, VA: Defense Technical Information Center, February 2004. http://dx.doi.org/10.21236/ada420504.

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9

Kang, W. N., D. H. Kim, and J. H. Park. Origin of 1/f noise peaks of YBa{sub 2}Cu{sub 3}O{sub x} films in a magnetic field. Office of Scientific and Technical Information (OSTI), February 1994. http://dx.doi.org/10.2172/79036.

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10

Handel, Peter H., and Alma L. Chung. International Conference on Noise in Physical Systems and 1/f Fluctuations (12th) Held in St. Louis, Missouri on 16-20 August 1993. AIP Conference Proceedings 285,. Fort Belvoir, VA: Defense Technical Information Center, August 1993. http://dx.doi.org/10.21236/ada299612.

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