Статті в журналах: "ZnO based Schottky Thin film devices"

1

R. Sabity, Mowj, and Ghusoon M. Ali. "PERFORMANCE ANALYSIS OF PD/ZNO BASED FLEXIBLE UV MSM PHOTODETECTORS." Journal of Engineering and Sustainable Development 26, no. 5 (September 1, 2022): 98–104. http://dx.doi.org/10.31272/jeasd.26.5.9.

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Flexible electronics and optoelectronics devices attract further attention in recent years. In this paper, we present the fabrication and photodetection properties of a flexible metal-semiconductor-metal UV photodetector based on a thin ZnO film with Pd Schottky electrodes. The active ZnO layer was created using a hydrothermal method on ITO/PET flexible substrates. Palladium employed as back-to-back Schottky contacts. Metal masks are designed and used to deposit palladium via thermal evaporation. To demonstrate the impact of ZnO on flexible substrates, the structural, optical, and electrical characteristics of the produced films were examined and assessed. I-V characteristics under dark and illumination conditions for a device were measured using a voltage range of -2.8 V to 2.8 V. The measured data were used to calculate device parameters and photodetection properties. Such as ideality factor, barrier height, saturation current, detectivity, responsivity, contrast-ratio, and efficiency. The proposed device exhibited a gain (efficiency of 200%} caused by trapping hole carrier at the ZnO-Pd interface.

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Zhang, Teng-Fei, Guo-An Wu, Jiu-Zhen Wang, Yong-Qiang Yu, Deng-Yue Zhang, Dan-Dan Wang, Jing-Bo Jiang, Jia-Mu Wang, and Lin-Bao Luo. "A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction." Nanophotonics 6, no. 5 (November 22, 2016): 1073–81. http://dx.doi.org/10.1515/nanoph-2016-0143.

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AbstractIn this study, we present a simple ultraviolet (UV) light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

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3

Zhang, Zhi Kun, Ji Ming Bian, and Xiao Qiang Kou. "A Novel ZnO-Based Graphite-Insulator-Semiconductor Diode for Transferable Unipolar Electronic Devices." Advanced Materials Research 710 (June 2013): 29–32. http://dx.doi.org/10.4028/www.scientific.net/amr.710.29.

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In this paper, a novel ZnO-based graphite-insulator-semiconductor (GIS) diode was fabricated on graphite substrate by radio frequency (rf) magnetron sputtering. A SiO2 thin film was used as the insulator layer grown by electron beam evaporation technique. The measurement of current-voltage of the ZnO-based GIS diode showed a Schottky rectifying diode characteristic with a threshold voltage of 5.2 V and a poor leakage current of ~10-3 A under a reverse bias condition. An interesting negative capacitance phenomenon was also observed from the GIS diode. The successful fabrication of ZnO-based GIS diode on graphite substrate offers the significant opportunity to be readily transferred onto any rigid or flexible foreign substrates, since the graphite substrate consists of weakly bonded layer structure.

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4

Shen, Mei, Triratna P. Muneshwar, Ken Cadien, Ying Y. Tsui, and Doug Barlage. "Optimization of Copper Schottky Contacts on Nanocrystalline ZnO thin films by Atomic Layer Deposition." MRS Advances 1, no. 50 (2016): 3421–27. http://dx.doi.org/10.1557/adv.2016.357.

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ABSTRACTContact metallization is an essential obstacle for utilizing low temperature achievable polycrystalline ZnO in any discrete devices and integrated circuits. To develop ZnO based semiconductor devices with advanced feature of flexibility, transparency and compatibility with low temperature processing, rectifying junctions must be fully developed. In this work, nanoscale polycrystalline ZnO thin films are fabricated with via low temperature (<200 °C) by atomic layer deposition (ALD). A vertical structure of bottom Schottky metallized diode is developed with copper (Cu) sputtered in room temperature. A control of Cu surface oxidation is realized with an in-situ remote plasma treatment. The results indicate that preparation of the copper surface substantially affects the electrical behavior of the diode. Thermal reliability of Cu metallized Schottky diode is subsequently carried out by annealing up to a maximum temperature of 300 °C before it breaks. This work considers the current transport mechanism evolved deviating current vs voltage (I-V) characteristics from conventional thermionic emission theory.

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5

Zafar, Mubeen, Muhammad Naeem Awais, Muhammad Asif, Amir Razaq, and Gul Amin. "Fabrication and characterization of piezoelectric nanogenerator based on Al/ZnO/Au structure." Microelectronics International 34, no. 1 (January 3, 2017): 35–39. http://dx.doi.org/10.1108/mi-11-2015-0092.

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Purpose The purpose of this research work is to harvest energy using the piezoelectric properties of ZnO nanowires (NW). Fabrication and characterization of the piezoelectric nanogenerator (NG), based on Al/ZnO/Au structure without using hosting layer, were done to harvest energy. The proposed method has full potential to harvest the cost-effective energy. Design/methodology/approach ZnO NW were fabricated between the thin layers of Al- and Au-coated substrates for the development of piezoelectric NG. To grow ZnO NW, ZnO seed layer was prepared on the Al-coated substrate, and then ZnO NW were grown by aqueous chemical growth method. Finally, Au top electrode was used to conclude the Al/ZnO/Au NG structure. The Al and Au electrodes were used to establish the ohmic and Schottky contacts with ZnO NW, respectively. Findings Surface morphology of the fabricated device was done by using scanning electron microscopy, and electrical characterization of the sample was performed with digital oscilloscope, picoammeter and voltmeter. The energy harvesting experiment was performed to excite the presented device. The fabricated piezoelectric-sensitive device revealed the maximum open circuit voltage up to 5 V and maximum short circuit current up to 30 nA, with a maximum power of 150 nW. Consequently, it was also shown that the output of the fabricated device was increased by applying the stress. The presented work will help for the openings to capture the mechanical energy from the surroundings to power up the nano/micro-devices. This research work shows that NGs have the competency to build the self-powered nanosystems. It has potential applications in biosensing and personal electronics. Originality/value The fabrication of simple and cost-effective piezoelectric NG is done with a structure of Al/ZnO/Au without using hosting layer. The presented method elucidates an efficient and cost-effective approach to harvest the mechanical energy from the native environment.

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6

Zhao, Shuaitongze, and Shifeng Xu. "Semiconductor Photoanode Photoelectric Properties of Methanol Fuel Cells." Journal of Nanoelectronics and Optoelectronics 16, no. 1 (January 1, 2021): 72–79. http://dx.doi.org/10.1166/jno.2021.2906.

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One-dimensional TiO2, ZnO, and Fe2O3 nanorod arrays are selected as the photocatalytic methanol fuel cell photoanodes, and a greenhouse catalytic methanol fuel cell device is designed. With the photo-generated holes' participation in fuel molecules' oxidation in the semiconductor electrode, chemical energy is converted into electric energy. Firstly, with pot-doped tin dioxide (TRS) as the substrate, TiO2, ZnO, and Fe2O3 nanorod arrays are prepared by hydrothermal method. TiO2 and ZnO are excellent photoelectric catalytic materials with similar energy band capability and strong separation capability for photo-generated charges in the energy band analysis. With a narrow band gap, Fe2O3 can be oxidized by water with visible light. In the experiment, different anodes' photoelectric properties are tested by the Mott-Schottky equation, cyclic voltammetry, and electrochemical analysis. The results show that the ZnO-based photoanode's maximum short-circuit current can reach 1.86 mA/cm2, and its open-circuit voltage can reach 1.15 V, the ZnO-based photoanode's 0.92 mA/cm2 and 1.36 V, and the Fe2O3-based photoanode's 0.08 mA/cm2 and 1.18 V. Compared with Fe2O3 electrodes, TiO2 and ZnO thin-film electrodes have better photocurrent conversion ability in dark, simulated sunlight, and visible light conditions. Fe2O3 electrodes can also generate strong instantaneous anode photocurrents after irradiation.

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7

Jiang, Dayong, Jiying Zhang, Youming Lu, Kewei Liu, Dongxu Zhao, Zhenzhong Zhang, Dezhen Shen, and Xiwu Fan. "Ultraviolet Schottky detector based on epitaxial ZnO thin film." Solid-State Electronics 52, no. 5 (May 2008): 679–82. http://dx.doi.org/10.1016/j.sse.2007.10.040.

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8

Shen, Mei, Amir Afshar, Manisha Gupta, Gem Shoute, Ken Cadien, Ying Yin Tsui, and Doug Barlage. "Electrical Characteristics of TiW/ZnO Schottky contact with ALD and PLD." MRS Proceedings 1635 (2014): 127–32. http://dx.doi.org/10.1557/opl.2014.49.

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ABSTRACTAn electrical and analytical study was carried out to investigate TiW/ZnO Schottky contacts with 30 nm ZnO thin film layers deposited by pulsed laser deposition (PLD), plasma enhanced atomic layer deposition (PEALD), and thermal atomic layer deposition (TALD). Devices with ZnO layer deposited by TALD exhibit approximately linear behavior in their I-V measurements. However, both devices with ZnO layers deposited by PEALD and PLD behaved like Schottky rectifiers with barrier heights between TiW and ZnO of 0.51 eV and 0.45 eV respectively and ideality factors of 2.0 and 2.3 respectively. The PEALD deposited ZnO Schotty diodes demonstrated an on/off rectifying ratio of about 25 at ±1 V. The leakage current values of the PLD deposited ZnO Schottky diodes are significantly larger than those of PEALD, leading to a poor on/off rectifying ratio of ∼4. Due to the small thickness, a critical breakdown strength of 1.3 MV/cm was estimated for PEALD-ZnO thin films.

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9

Trinchi, A., W. Wlodarski, Sandro Santucci, D. Di Claudio, Maurizio Passacantando, C. Cantalini, B. Rout, S. J. Ippolito, K. Kalantar-Zadeh, and G. Sberveglieri. "Microstructural Characterisation of RF Magnetron Sputtered ZnO Thin Films on SiC." Solid State Phenomena 99-100 (July 2004): 123–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.99-100.123.

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The microstructural characterization of r.f. magnetron sputtered ZnO thin films deposited on 6H-SiC is presented with a comprehensive investigation of their properties as a function of annealing temperature and film thickness. These structures, with some modifications, are utilised as Schottky diode hydrogen gas sensors and Surface Acoustic Wave (SAW) devices.

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10

Ginting, M., and J. D. Leslie. "Preparation and electrical properties of heterojunctions of ZnO on Zn3P2 and CdTe." Canadian Journal of Physics 67, no. 4 (April 1, 1989): 448–55. http://dx.doi.org/10.1139/p89-080.

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"Heterojunctions" have been fabricated by the reactive evaporation of thin film n-type ZnO onto p-type single crystal Zn3P2, polycrystalline films of Zn3P2, and single crystal CdTe. The photovoltaic response of the n-ZnO – single crystal p-CdTe devices was good, that of the n-ZnO – single crystal p-Zn3P2 devices was poor, and that of the n-ZnO – p-Zn3P2 polycrystalline film devices was nonexistent. The ideality factor n of all devices studied was greater than two. On the basis of 1/C2 vs. V results, the n-ZnO – single crystal p-Zn3P2 devices behaved most like Schottky barrier devices, whereas the n-ZnO – p-Zn3P2 polycrystalline film devices, and the n-ZnO – p-single crystal CdTe "heterojunctions" behaved most like metal–insulator–semiconductor devices. The high series resistance of all devices had to be considered in the measurement and analysis, and it limited the photovoltaic performance. Deep-level transient spectroscopy measurements indicated majority (hole) traps in the CdTe and Zn3P2 with activation energies in agreement with previous measurements in the literature.

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11

Ali, Ghusoon M., Ahmed K. Khalid, and Salah M. Swadi. "Nanoflower ZnO thin-film grown by hydrothermal technique based Schottky diode." Journal of Semiconductors 41, no. 10 (September 28, 2020): 102103. http://dx.doi.org/10.1088/1674-4926/41/10/102103.

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12

KESKENLER, E. F., and M. HAİDAR. "SCHOTTKY DIODE FABRICATION VIA COLD SUBSTRATE EVAPORATED Ag ON SOL-GEL DERIVED ZnO ULTRA-THIN FILMS FOR SEMICONDUCTOR DEVICES." Journal of Ovonic Research 16, no. 5 (September 2020): 309–21. http://dx.doi.org/10.15251/jor.2020.165.309.

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ZnO thin films were grown on glass and SnO2 substrate by using Sol-gel method with a simple, low cost-temperature and high controlled away. ZnO thin films were contacted with Ag in two different temperatures at 200K (cold substrate) and 300K (room temperature) by PVD Cold Substrate Method. Characterization of the obtained films and Schottky diodes studied by XRD, SEM, Optical and Electrical measurements. The average particle size and film thickness of the films were calculated as ~25 and ~300nm. Bandgap of the ZnO films coated on different substrates was calculated to be around 3.29-3.31 eV. Peaks of various types of defects were observed in different wavelengths from photoluminescence measurements. The barrier height and ideal factor values of Ag/ZnO Schottky diodes at 200K and 300K were (0.48-0.43eV; 15.60) and (0.66-0.15eV; 8.6- 7.41), respectively. The series resistance values (4.46Ω; 4.88Ω) at 200K and (3.65Ω; 4.78Ω) at 300K were obtained from two different methods, respectively. Diodes made at 200K temperature were found to have a higher ideality factor. However, while 75% of all produced Schottky diodes at 200K substrate temperature show rectifying feature, this rate is only 25% in contacts made at 300K substrate temperature.

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13

Yang, X., C. Wang, C. Zhao, W. Tang, X. Gao, J. Yang, B. Liu, X. Qi, G. Du, and J. Cao. "Fabrication of ZnO Thin Film Transistors Based on the Substrate of Glass." Key Engineering Materials 428-429 (January 2010): 501–4. http://dx.doi.org/10.4028/www.scientific.net/kem.428-429.501.

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In our paper, we induced the process of ZnO based thin film transistors (ZnO-TFTs) fabricated on the substrate of glass. The photolithographic plate designed for using in the ZnO-TFT devices fabrication process was shown in our paper. The ZnO-TFT devices were fabricated successfully, the Ion/off ratio is ~104.

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14

Xi, Jun Hua, Xue Ping Chen, Hong Xia Li, Jun Zhang, and Zhen Guo Ji. "Effects of Film Thickness on Resistive Switching Characteristics of ZnO Based ReRAM." Advanced Materials Research 721 (July 2013): 194–98. http://dx.doi.org/10.4028/www.scientific.net/amr.721.194.

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ZnO thin films were deposited on heavily doped silicon wafer by DC magnetron sputtering and the Cu electrodes were evaporated on ZnO/ n+-Si by electric beam evaporation to get Cu/ZnO/n+-Si resistive random access memory (ReRAM). The forming, reset and set processes of the devices were investigated using filamentary model. The effects of film thickness on the crystalline structure of the ZnO thin films and the resistive switching characteristics of the fabricated devices were investigated. The diffraction peak intensity and crystal size increased with increasing film thickness, which shows better crystallization. Cu/ZnO/n+-Si structured device exhibits reversible and steady unipolar resistive switching behaviors. The film thickness had great effect on the forming process of the prepared devices, while the values of Vset increased and Vreset varied little with increasing the film thickness.

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15

Dawka, Sahil, Pengjun Duan, Raju Sapkota, and Chris Papadopoulos. "Thin Film Photodetectors Based on Zinc Oxide Nanoinks." ECS Meeting Abstracts MA2022-01, no. 31 (July 7, 2022): 1329. http://dx.doi.org/10.1149/ma2022-01311329mtgabs.

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Zinc oxide (ZnO) has many useful properties for electronics and optoelectronics including wide band gap, large exciton binding energy, low-cost, ease of processing and availability [1]. This has led to increased interest and development of thin film electronics, transparent conductors, solar cells, light-emitting diodes, lasers, photodetectors and various sensors based on ZnO materials [2, 3]. The high surface areas and tunable properties of ZnO nanostructures make them particularly suitable for applications such as sensing and photonic devices [4, 5]. In this work, we present results on nanostructured ZnO thin film photodetectors fabricated using nanoparticle inks (nanoinks) obtained via planetary ball milling (PBM) of bulk powders. PBM [6] is an emerging solution-based nanofabrication approach that can quickly produce nanoink suspensions at low-cost by nanoscale grinding, without complex processing and suitable for thin film coating of various materials on different substrates [7]. The thin film photodetector devices were fabricated by depositing PBM ZnO nanoink onto flat insulating glass substrates followed by contact formation as shown schematically in Fig. 1a: PBM was performed using ZnO powder in ethylene glycol (EG) or deionized (DI) water solvent (a.k.a. colloidal grinding) with zirconia grinding beads. The grinding speed and time were varied between 200 and 1000 rpm and 10 min. and 60 min., respectively. A few μL of the resulting ZnO nanoink was used to coat the substrate surface and dried at ~ 100 °C. Lastly, two electrical contacts to the resulting films were made using silver paint and copper tape. Analysis of ZnO films after deposition showed they consist of nanostructured particles with sizes reaching below 100 nm, as displayed in the scanning electron microscopy (SEM) and atomic force microscopy (AFM) images in Fig. 1b, depending on grinding conditions (speed, time). The optical properties of the ZnO thin films were evaluated via photoluminescence measurements (Fig. 1c), which, in addition to interband transitions in the UV, displayed longer wavelength emission peaks due to surface and bulk defect states. Such deep level states are dependent on grinding parameters and thus allow the accessible spectrum for the nanostructured ZnO films to be extended into the visible region in a tunable manner. Two-terminal photoconductance data of the ZnO PBM nanoink thin film devices were obtained using a probe station and precision source-measure unit, with and without illumination, under ambient atmosphere and at room temperature. Fig. 1d shows current vs. voltage curves obtained for a typical photodetector device, which display current increasing proportional to incident light intensity. This behavior can be explained by electron-hole pair creation and desorption of surface oxygen species (leading to vacancies that act as donors) upon photon absorption, which leads to an increase in conductance. This is consistent with previous studies where ZnO thin films have been used for photoconductive sensor applications, validating PBM nanoink as a suitable synthesis technique for the active material in photodetectors. Compared to standard ZnO thin films, the PBM nanoink method allows both particle dimensions and surface states to be tailored and optimized for different photodetector applications in a straightforward manner by adjusting grinding conditions. In particular, both UV and visible light detection can be tuned via the solution-based ZnO nanoink approach presented without additional material/chemical processing. Such PBM nanoinks thus offer the potential of realizing low-cost photodetectors and multifunctional thin film coatings for applications in optoelectronics, imaging, environmental monitoring and communications. References [1] C. Klingshirn, Phys. Status Solidi B, 244, 3027 (2007). [2] R. Chen and L. Lan, Nanotechnology, 30, 312001 (2019). [3] J. Huang, A. Yin and Q. Zheng, Energy Environ. Sci., 4, 3861 (2011). [4] Y. Tu et al., ACS Sens., 5, 3568 (2020). [5] W. Tian et al., Adv. Mater., 25, 4625 (2013). [6] C. F. Burmeister and A. Kwade, Chem Soc. Rev., 42, 7660 (2013). [7] R. Sapkota, J. Zou, S. Dawka, J. E. Bobak and C. Papadopoulos, Appl. Nanosci., 8, 1437 (2018). Figure 1

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16

Yılmaz, K., M. Parlak, and Ç. Erçelebi. "Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices." Semiconductor Science and Technology 22, no. 12 (October 26, 2007): 1268–71. http://dx.doi.org/10.1088/0268-1242/22/12/004.

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17

Hernandez-Como, N., A. Rodriguez-Lopez, F. J. Hernandez-Cuevas, J. Munguia, R. Garcia, R. Baca-Arroyo, and M. Aleman. "Current–voltage–temperature characteristics of PEDOT:PSS/ZnO thin film-based Schottky barrier diodes." Semiconductor Science and Technology 31, no. 11 (September 27, 2016): 115007. http://dx.doi.org/10.1088/0268-1242/31/11/115007.

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18

M. Ali, Ghusoon, and P. Chakrabarti. "Thermal Stability of Sol-Gel Deposited Thin Film Zno-Based Schottky Ultraviolet Photodetectors." Engineering and Technology Journal 32, no. 4B (April 1, 2014): 720–28. http://dx.doi.org/10.30684/etj.32.4b.12.

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19

Shan, Yue, Yan Hong Wu, Dong Xing Wang, Yue Zhang, Jia Bin Chen, Jing Hua Yin, and Hong Zhao. "The Preparation and Characteristics Analysis of ZnO/Ni/ZnO Schottky Junction TFTs." Advanced Materials Research 981 (July 2014): 834–37. http://dx.doi.org/10.4028/www.scientific.net/amr.981.834.

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Using radio frequency magnetron sputtering deposition deposit ZnO films on SiO2glass, and prepare vertical structure ZnO-based thin film transistor. By means of measurement, obtain the static output characteristics, the output current can achieve the order of milliampere, get the transfer characteristics of ZnO TFTs; transconductance which get the largest value gm=0.0061S when source-drain voltage VDS=3V, source-gate VGS=0.4V; output resistance and voltage amplification coefficient, the smallest voltage amplification factor is μ=1.16056,still have voltage amplification effect.

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20

Singh, Budhi, and Subhasis Ghosh. "Highly Conducting Gallium-Doped ZnO Thin Film as Transparent Schottky Contact for Organic- Semiconductor-Based Schottky Diodes." Journal of Electronic Materials 44, no. 8 (April 22, 2015): 2663–69. http://dx.doi.org/10.1007/s11664-015-3783-8.

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21

Singh, Mandeep, Gerardo Palazzo, Giuseppe Romanazzi, Gian Paolo Suranna, Nicoletta Ditaranto, Cinzia Di Franco, Maria Vittoria Santacroce, et al. "Bio-sorbable, liquid electrolyte gated thin-film transistor based on a solution-processed zinc oxide layer." Faraday Discuss. 174 (2014): 383–98. http://dx.doi.org/10.1039/c4fd00081a.

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Among the metal oxide semiconductors, ZnO has been widely investigated as a channel material in thin-film transistors (TFTs) due to its excellent electrical properties, optical transparency and simple fabrication via solution-processed techniques. Herein, we report a solution-processable ZnO-based thin-film transistor gated through a liquid electrolyte with an ionic strength comparable to that of a physiological fluid. The surface morphology and chemical composition of the ZnO films upon exposure to water and phosphate-buffered saline (PBS) are discussed in terms of the operation stability and electrical performance of the ZnO TFT devices. The improved device characteristics upon exposure to PBS are associated with the enhancement of the oxygen vacancies in the ZnO lattice due to Na⁺ doping. Moreover, the dissolution kinetics of the ZnO thin film in a liquid electrolyte opens the possible applicability of these devices as an active element in “transient” implantable systems.

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Li, Hong Xia, Dong Dong Shen, Wei Qing Ke, Jun Hua Xi, Zhe Kong, and Zhen Guo Ji. "Fabrication and Characterization of Transparent ZnO Film Based Resistive Switching Devices." Key Engineering Materials 609-610 (April 2014): 565–70. http://dx.doi.org/10.4028/www.scientific.net/kem.609-610.565.

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In this paper, ZnO thin films were prepared on ITO conductive glass by direct current magnetron sputtering and the Cu electrodes were evaporated on ZnO/ITO by electric beam evaporation to get transparent Cu/ZnO/ITO resistive random access memory. The crystal structure and surface morphology were investigated by X-ray diffraction and atomic force microscopy, respectively. The transmittance spectra of ZnO/ITO in the visible region were measured by UV-VIS spectroscopy. The resistive switching characteristics of the fabricated devices were investigated by the voltage sweeping method, which showed that the transparent Cu/ZnO/ITO device had good resistive switching characteristics.

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23

Iqbal, Tahir, M. Irfan, Shahid M. Ramay, Hamid M. Gaithan, Asif Mahmood, and Murtaza Saleem. "Investigations on ZnO/polymer nanocomposite thin film for polymer based devices." Materials Research Express 6, no. 7 (April 5, 2019): 075322. http://dx.doi.org/10.1088/2053-1591/ab1316.

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24

T.Armoot, Shahad, and Ghusoon M. Ali. "NANORODS ZnO THIN FILM GROWN BY HYDROTHERMAL METHOD BASED PLANAR AND VERTICAL PD/ZnO SCHOTTKY DIODE CONFIGURATIONS." Journal of Engineering and Sustainable Development 24, special (August 1, 2020): 199–205. http://dx.doi.org/10.31272/jeasd.conf.1.22.

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25

Luo, Jack K., Y. Q. Fu, Greg Ashley, and Williams I. Milne. "Integrated ZnO Film Based Acoustic Wave Microfluidics and Biosensors." Advances in Science and Technology 67 (October 2010): 49–58. http://dx.doi.org/10.4028/www.scientific.net/ast.67.49.

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Lab-on-a-chip (LOC) is one of the most important microsystems with promising applications in microanalysis, drug development and diagnosis, etc. We have been developing a LOC biodetection system using acoustic wave as a single actuation mechanism for both microfluidics and biosensing using low cost piezoelectric ZnO film. Surface acoustic waves (SAW) coupled into the liquid will induce acoustic streaming, or move the droplet on the surface. These have been utilized to make SAW-based micropumps and micromixers which are simple in structure, easy to fabricate, low cost, reliable and efficient. SAW devices and thin film bulk acoustic resonators (FBAR) have been fabricated on nanocrystalline ZnO thin films deposited using sputtering on Si substrates. A streaming velocity up to ~5cm/s within a microdroplet and a droplet moving speed of ~1cm/s have been achieved. SAW based droplet ejection and vaporization have also been realized. SAW devices and FBARs have been used to detect antibody/antigen and rabbit/goat immunoglobulin type G molecules, showing their high sensitivity. The results have demonstrated the feasibility of using a single actuation mechanism for the LOC.

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Liu, Y., J. Yu, and P. T. Lai. "Investigation of WO3/ZnO thin-film heterojunction-based Schottky diodes for H2 gas sensing." International Journal of Hydrogen Energy 39, no. 19 (June 2014): 10313–19. http://dx.doi.org/10.1016/j.ijhydene.2014.04.155.

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27

Dai, Zhen Qing, Bing Hui, and Ya Fei Zhang. "A Simple and Sufficient Method to Fabricate ZnO Nanowire Thin-Film Transistors." Advanced Materials Research 335-336 (September 2011): 451–54. http://dx.doi.org/10.4028/www.scientific.net/amr.335-336.451.

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Large-scale fabrication of ZnO nanowire (NW) based devices with a low cost process is a key issue in practical application. In this paper, we report a simple and sufficient self-assembly process to prepare highly dense, uniform ZnO NW films. In this process, the NWs are modified with the aminopropyltriethoxy silane (APTES) to form the positively charged amine-terminated layer, so they are adsorbed on negatively charged SiO2/Si substrates to form ZnO NW films by the electrostatic interaction in aqueous solution. Nanowire thin-film transistors (NW-TFTs) based on the prepared ZnO NW films are fabricated. A typical NW-TFT exhibited a current on/off ratio of 2.7×105, a transconductance of 546 nS and a field-effect mobility of 8.9 cm2/V•s. This study may pave the way toward large-scale fabrication of ZnO NW based devices with simple, sufficient and low cost process.

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Kumar, Ashish, Arathy Varghese, Shriniwas Yadav, Mahanth Prasad, Vijay Janyani, and R. P. Yadav. "Influence of Temperature on Graphene/ZnO Heterojunction Schottky Diode Characteristics." Journal of Nanoscience and Nanotechnology 21, no. 5 (May 1, 2021): 3165–70. http://dx.doi.org/10.1166/jnn.2021.19084.

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The paper reports development of graphene/ZnO heterojunction Schottky diode structure and its structural and electrical characterization. Graphene is grown on copper substrate using chemical vapor deposition (CVD) and transferred on flexible substrate (indium Tin Oxide coated PET). The grown thin layer is characterized using scanning electron microscopy and Raman spectroscopy which confirm uniformity and high-quality graphene layer. The sputtered ZnO is deposited and characterized which confirms c-axis (002) orientation and uniform growth of ZnO film. Silver (Ag) as a top electrode has been deposited and I–V measurement has been done. The effect of operating temperature (300 K to 425 K) on I–V characteristics of the fabricated structure has been measured experimentally. The other diode parameters such as ideality factor and effective barrier height have been derived. The reliability of the heterojunction synthesized is proved by the diode ideality factor of 1.03 attained at 425 K. The excellent C–V characteristics (capacitance of 48pF) of the device prove that the device is an excellent candidate for application as supercapacitors. The fabricated structure can be utilized as an ultraviolet photodetector, solar cell, energy storage devices, etc.

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29

Neaime, Chrystelle, Fabien Grasset, and Tangi Aubert. "Band-Gap Engineering Based on Ti@ZnO Nanocolloids: Tunable Optical Properties." Key Engineering Materials 617 (June 2014): 161–65. http://dx.doi.org/10.4028/www.scientific.net/kem.617.161.

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One of the largest application areas of sol-gel chemistry is thin-film preparation. Using this approach, we started to synthesize M@ZnO colloidal solutions for the preparation of functional thin films. ZnO is a wide band-gap (3.37 eV) semiconductor with large exciton binding energy. In the bulk or in nanosized form, it could be used in a wide range of applications such as UV light emitters, spin functional devices, gas sensors, transparent electronics or surface acoustic wave devices. Since recently, the preparation of innovative functional M@ZnO materials by doping or functionalizing nanocolloids constitutes a new challenge. Using high concentrations of the different Ti@ZnO nanocolloids, we were able to prepare various functional colloidal solutions with tunable emission and thin films, such as red-luminescent Eu3+@ZnTiO3 or versatile ZnTiON colored nanomaterials.

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30

Yadav, Aniruddh Bahadur, Amritanshu Pandey, Divya Somvanshi, and Satyabrata Jit. "Sol-Gel-Based Highly Sensitive Pd/n-ZnO Thin Film/n-Si Schottky Ultraviolet Photodiodes." IEEE Transactions on Electron Devices 62, no. 6 (June 2015): 1879–84. http://dx.doi.org/10.1109/ted.2015.2423322.

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31

Ali, Ghusoon M., and Parthasarathi Chakrabarti. "Fabrication and characterization of thin film ZnO Schottky contacts based UV photodetectors: A comparative study." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30, no. 3 (May 2012): 031206. http://dx.doi.org/10.1116/1.3701945.

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32

Roy, S., S. Das, and C. K. Sarkar. "Investigation of nanostructured Pd–Ag/n-ZnO thin film based Schottky junction for methane sensing." International Nano Letters 6, no. 3 (July 7, 2016): 199–210. http://dx.doi.org/10.1007/s40089-016-0187-6.

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33

Kumar, Ashish, Arathy Varghese, and Vijay Janyani. "Fabrication of graphene–ZnO heterostructure-based flexible and thin platform-based UV detector." Journal of Materials Science: Materials in Electronics 33, no. 7 (December 22, 2021): 3880–90. http://dx.doi.org/10.1007/s10854-021-07578-8.

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AbstractThis work presents the performance evaluation of Graphene/ZnO Schottky junctions grown on flexible indium tin oxide (ITO)-coated polyethylene terephthalate (PET) substrates. The fabricated structures include chemical vapour deposition grown graphene layer on ITO-coated PET substrates. Polymethyl methacrylate assisted transfer method has been employed for the successful transfer of graphene from Cu substrate to PET. The smaller D-band intensity (1350 cm−1) compared to G-band (1580 cm−1) indicates good quality of carbon lattice with less number of defects. High-quality ZnO has been deposited through RF sputtering. The deposited ZnO with grain size 50–95 nm exhibited dislocation densities of 1.31270 × 10–3 nm−2 and compressive nature with negative strain of − 1.43156 GPa. Further, the electrical and optical characterization of the devices has been done through device I–V characterization and UV detection analysis. The UV detection capability of the device has been carried out with the aid of a UV-lamp of 365 nm wavelength. The fabricated graphene/ZnO photodetector showed good response to UV illumination. The device performance analysis has been done through a comparison of the device responsivity and detectivity with the existing detectors. The detectivity and responsivity of the fabricated detectors were 7.106 × 109 mHz1/2 W−1 and 0.49 A W−1, respectively.

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34

Kumar, Manoj, Hakyung Jeong, and Dongjin Lee. "Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface." RSC Advances 7, no. 44 (2017): 27699–706. http://dx.doi.org/10.1039/c7ra03460a.

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Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

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35

Cardarilli, Gian Carlo, Gaurav Mani Khanal, Luca Di Nunzio, Marco Re, Rocco Fazzolari, and Raj Kumar. "Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device." Electronics 9, no. 2 (February 7, 2020): 287. http://dx.doi.org/10.3390/electronics9020287.

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An oxygen-rich ZnO-reduced graphene oxide (rGO) thin film was synthesized using a photo-annealing technique from zinc precursor (ZnO)–graphene oxide (GO) sol–gel solution. X-ray diffraction (XRD) results show a clear characteristic peak corresponding to rGO. The scanning electron microscope (SEM) image of the prepared thin film shows an evenly distributed wrinkled surface structure. Transition Metal Oxide (TMO)-based memristive devices are nominees for beyond CMOS Non-Volatile Memory (NVRAM) devices. The two-terminal Metal–TMO (Insulator)–Metal (MIM) memristive device is fabricated using a synthesized ZnO–rGO as an active layer on fluorine-doped tin oxide (FTO)-coated glass substrate. Aluminum (Al) is deposited as a top metal contact on the ZnO–rGO active layer to complete the device. Photo annealing was used to reduce the GO to rGO to make the proposed method suitable for fabricating ZnO–rGO thin-film devices on flexible substrates. The electrical characterization of the Al–ZnO–rGO–FTO device confirms the coexistence of memristive and memimpedance characteristics. The coexistence of memory resistance and memory impedance in the same device could be valuable for developing novel programmable analog filters and self-resonating circuits and systems.

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36

Dan, Wen Chao, Ya Dong Jiang, Hui Ling Tai, Guang Zhong Xie, Xian Li, Chang Jie Fu, and Ze Wu. "The Formaldehyde OTFT Sensor Based on the Airbrushed P3HT/ZnO Composite Thin Film." Key Engineering Materials 531-532 (December 2012): 400–403. http://dx.doi.org/10.4028/www.scientific.net/kem.531-532.400.

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The pure conducting polymer P3HT film is less sensitive to the formaldehyde (HCHO), and the pure ZnO film needs a high temperature to militate the HCHO, as a result, the P3HT/ZnO composite was fabricated on the organic thin film transistor (OTFT) by spraying to detect the HCHO at room temperature, the electrical properties and sensing properties of all the prepared OTFT devices were measured by Keithley 4200-SCS source measurement unit. What is more, the effect of different P3HT/ZnO composite masses on the response of sensors were tested, all the sensors showed a remarkable response to HCHO, and the optimized composite mass of 1.0ml was obtained. Since most detecting methods for the HCHO vapor require an high temperature, the experiments and results in this paper showed the important significance for the field of HCHO detecting.

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Roy, M. S., G. D. Sharma, and S. K. Gupta. "Charge conduction process and photovoltaic effects in thiazole yellow (TY) thin film based Schottky devices." Thin Solid Films 310, no. 1-2 (November 1997): 279–88. http://dx.doi.org/10.1016/s0040-6090(97)00394-5.

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38

Raj, V. Bhasker, Harpreet Singh, A. Theodore Nimal, M. U. Sharma, Monika Tomar, and Vinay Gupta. "Utilization of Mass and Elastic Loading in Oxide Materials Based SAW Devices for the Detection of Mustard Gas Simulant." Advanced Materials Research 488-489 (March 2012): 1558–62. http://dx.doi.org/10.4028/www.scientific.net/amr.488-489.1558.

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The properties (mass loading and elastic changes) of different oxide materials (ZnO, TeO2, SnO2, TiO2) in thin film form has been explored for the enhanced detection of DBS (di butyl sulphide), a simulant of sulphur mustard gas. All the four oxide materials are deposited on to the surface of SAW (Surface Acoustic Wave) devices to impart sensitivity and selectivity. ZnO and SnO2 films are crystalline whereas TiO2 and TeO2 films are amorphous in nature. All the films are transparent with transparency greater than 75 % in the visible region. The SAW devices coated with different oxide materials were placed in the feedback loop of colpitt oscillator. With the exposure of DBS vapors, differential frequency increases for TiO2 thin films whereas for other oxide coatings (ZnO, TeO2 and SnO2) it decreases. ZnO coated SAW sensor is found to be maximum sensitive to DBS vapors. Investigation of sensing mechanism revealed that mass loading effect is pronounced in TiO2 thin film whereas for other films change in elasticity is dominant. The oxide coatings are very less sensitive to the other interferants.

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39

Kamiya, Toshio, and Masashi Kawasaki. "ZnO-Based Semiconductors as Building Blocks for Active Devices." MRS Bulletin 33, no. 11 (November 2008): 1061–66. http://dx.doi.org/10.1557/mrs2008.226.

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AbstractThis article provides a review of materials and devices of wide-bandgap oxide semiconductors based on ZnO, highlighting the nature of the chemical bond. The electronic structures of these materials are very different from those of conventional covalently bonded semiconductors, owing to the ionic nature of the chemical bonds. Therefore, one needs to design and optimize fabrication processes and structures of active devices containing such materials, taking into account the peculiar defect formation mechanisms. A variety of active devices that have clear advantages over the conventional ones have been demonstrated, for example, ultraviolet light-emitting diodes, quantum Hall devices, and transparent and flexible thin-film transistors with high electron mobility, paving the way for future applications. The reasons behind the successes identify future challenges in research on oxide semiconductors.

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40

Ma, Hong Yu, En Jie Ding, and Zeng Liang Shi. "ZnO Field-Effect Transistor Fabricated by RF Magnetron Suputtering and Lithographic/Wet Etching Processes." Key Engineering Materials 480-481 (June 2011): 605–8. http://dx.doi.org/10.4028/www.scientific.net/kem.480-481.605.

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The fabrication of zinc oxide （ZnO）based thin-film field-effect transistors (TFTs) on p-Si substrates by rf magnetron sputtering, photolithography and wet etching processes was presented. Bottom-gate-type thin film transistors using ZnO as an active channel layer were constructed, and their properties were characterized by atomic force microscope, X-ray diffraction and I-V measurements. The fabricated ZnO transistors exhibited enhancement mode characteristics with the on-to-off current ratio of ∼105 and the threshold voltage of 10V. It is believed that the ZnO TFTs fabricatd by the simple and low-cost technique could be applicable to electronic devices.

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41

Cheng, Chien Chuan, Re Ching Lin, Wei Tsai Chang, Ying Chung Chen, Kuo Sheng Kao, and Sin Liang Ou. "Shear Mode ZnO Thin Film Applied in FBAR Sensor." Advanced Materials Research 201-203 (February 2011): 718–21. http://dx.doi.org/10.4028/www.scientific.net/amr.201-203.718.

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In this study, platinum (Pt) and zinc oxide (ZnO) had been adopted as electrode and piezoelectric layer of an FBAR sensor. Based on the off-axis deposition of the ZnO film, longitude and shear modes resonance phenomenon can be approached to sensitive in air and liquid respectively. The preferred orientation and crystal properties of the ZnO film were evaluated by X-ray diffraction (XRD) using a SHIMADZU XRD-6000 with Cu Kαradiation. The crosssections of the grain structures of ZnO films were observed by scanning electron microscopy (SEM) (Philips XL40 FESEM). The electrical resistance of the bottom electrode was measured using the van der Pauw four-point probe method. The HP8720 network analyzer and CASCADE probe station (RHM-06/V + GSG 150) were used to measure the frequency responses of FBAR devices. The result of FBAR frequency response in liquid, the quality factor of longitude mode is decayed apparent and shear mode is kept high value. The Pt electrode of FBAR sensor has to withstand attack of acid/alkali solution.

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42

Zhang, Jiawei, Josh Wilson, and Aimin Song. "(Invited, Digital Presentation) Oxide TFTs Based on Semiconductors and Semimetals." ECS Meeting Abstracts MA2022-02, no. 35 (October 9, 2022): 1263. http://dx.doi.org/10.1149/ma2022-02351263mtgabs.

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Oxide semiconductors have opened a new era for large-area, flexible and transparent applications. Despite the progresses, a bottleneck issue of oxide thin-film transistors (TFTs) is the instability either under bias stress or when used as a current source. Furthermore, the carrier mobility and current driving capability need to be improved for high-spec displays. It is still hugely challenging to overcome both issues using the conventional device structure and oxide semiconductor materials. Here, we review our recent work on novel oxide TFTs that show a few desirable properties. Rather than using an ohmic metal contact as the source electrode, a high work-function Schottky source contact enables depletion around the TFT source region, which results in intrinsic immunity to the negative bias illumination stress, no obvious short channel effect, and superb current saturation over a wide range of drain voltage1. The flat saturation current gives rise to an extremely high voltage gain reaching 23,000, which is, to the best of our knowledge, the highest gain ever achieved by a solid-state transistor to date. The threshold voltage is also found to remain stable under different drain voltages, in contrast to standard TFTs, which may be useful in larger-area displays where the drain voltages of the drive TFTs can differ2. Furthermore, the depletion provided by the Schottky source electrode allows utilizing semi-metal ITO to replace IGZO as the TFT channel layer, which significantly enhances the carrier mobility and current driving capability. Other related work may also be discussed in the talk including oxide Schottky diodes operating beyond 10 GHz3, oxide TFTs operating beyond 1 GHz4, significantly enhanced carrier mobility by self-assembled monolayer treatment5,6, and CMOS-like oxide-based logic circuits7,8. References Extremely high-gain source-gated transistors, J Zhang, J Wilson, G Auton, Y Wang, M Xu, Q Xin, A Song, Proceedings of the National Academy of Sciences 116 (11), 4843-4848 (2019) Comparative Study of Short-Channel Effects Between Source-Gated Transistors and Standard Thin-Film Transistors, Zhenze Wang, Li Luo, Yiming Wang, Jiawei Zhang, and Aimin Song, IEEE Transactions on Electron Devices, 69(2), 561 - 566 (2022). Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz, J Zhang, Y Li, B Zhang, H Wang, Q Xin, A Song, Nature communications 6 (1), 1-7 (2015). Amorphous-InGaZnO thin-film transistors operating beyond 1 GHz achieved by optimizing the channel and gate dimensions, Y Wang, J Yang, H Wang, J Zhang, H Li, G Zhu, Y Shi, Y Li, Q Wang, Qian Xin, Zhongchao Fan, Fuhua Yang, Aimin Song, IEEE Transactions on Electron Devices 65 (4), 1377-1382 (2018). Significant Performance Improvement of Oxide Thin‐Film Transistors by a Self‐Assembled Monolayer Treatment, W Cai, J Zhang, J Wilson, J Brownless, S Park, L Majewski, A Song, Advanced Electronic Materials 6 (5), 1901421 (2020). Significant performance enhancement of very thin InGaZnO thin-film transistors by a self-assembled monolayer treatment, W Cai, J Wilson, J Zhang, J Brownless, X Zhang, LA Majewski, A Song, ACS Applied Electronic Materials 2 (1), 301-308 (2020). Complementary integrated circuits based on p-type SnO and n-type IGZO thin-film transistors, Y Li, J Yang, Y Wang, P Ma, Y Yuan, J Zhang, Z Lin, L Zhou, Q Xin, Aimin Song, IEEE Electron Device Letters 39 (2), 208-211 (2017). Thin Film Sequential Circuits: Flip-Flops and a Counter Based on p-SnO and n-InGaZnO, Y Yuan, J Yang, Y Wang, Z Hu, L Zhou, Q Xin, A Song, IEEE Electron Device Letters 42 (1), 62-65 (2020).

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Habibi, Mehdi, and Maryam Fanaei. "A DNA hybridization detection sensor based on photo biased ZnO thin film FET devices." Sensor Review 36, no. 4 (September 19, 2016): 368–76. http://dx.doi.org/10.1108/sr-04-2016-0074.

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Purpose The purpose of this paper is to present a DNA hybridization detection sensor. An inexpensive fabrication procedure was used so that the sensors can be disposed economically after the measurement is completed. Design/methodology/approach Field effect transistor (FET) devices are used in the proposed structure. The FET device acts as a charge detection element and produces an amplified output current based on surface charge variations. As amplification is performed directly at the sensor frontend, noise sources have less effect on the detected signal, and thus, acceptably low DNA concentrations can be detected with simple external electronics. ZnO nano layers are used as the FET active semiconductor channel. Furthermore, a photobiasing approach is used to adjust the operating point of the proposed FET without the need for an additional gate terminal. Findings The proposed sensor is evaluated by applying matched and unmatched target DNA fragments on the fabricated sensors with capture probes assembled either directly on the ZnO surface or on a nano-platinum linker layer. It is observed that the presented approach can successfully detect DNA hybridization at the nano mole range with no need for complex laboratory measurement devices. Originality/value The presented photobiasing approach is effective in the adjustment of the sensor sensitivity and decreases the fabrication complexity of the achieved sensor compared with previous works.

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44

Chen, Jinkai, Wenbo Wang, Weipeng Xuan, Xiaozhi Wang, Shurong Dong, Sean Garner, Pat Cimo, and Jikui Luo. "Flexible surface acoustic wave broadband strain sensors based on ultra-thin flexible glass substrate." MRS Advances 1, no. 21 (2016): 1519–24. http://dx.doi.org/10.1557/adv.2016.110.

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ABSTRACTFlexible SAW devices based on ZnO piezoelectric thin film deposited on ultra-thin flexible glass were fabricated and their performances as a strain sensor have been investigated. The XRD and AFM characterizations showed that the ZnO layers have good crystal quality and smooth surface. The flexible SAW devices show excellent strain sensitivity which increases from ∼87 to ∼137 Hz/με with the increasing ZnO thickness, and the sensors can withstand strains up to ∼3000 με, 4∼6 times larger than those of SAW strain sensors on rigid substrates. The sensors exhibited remarkable stability up to hundreds of times bending under large strains. The effects of environmental variables (temperature, humidity, UV light) on the sensor performance have been investigated. The temperature has a significant effect on the performance of the SAW strain sensor, while humidity and light have limited effect.

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45

Lee, Dae-Sik, Jikui Luo, Yongqing Fu, William I. Milne, Nae-Man Park, Sang Hyeob Kim, Mun Yeon Jung, and Sunglyul Maeng. "Nanocrystalline ZnO Film Layer on Silicon and its Application to Surface Acoustic Wave-Based Streaming." Journal of Nanoscience and Nanotechnology 8, no. 9 (September 1, 2008): 4626–29. http://dx.doi.org/10.1166/jnn.2008.ic44.

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A surface acoustic wave (SAW) device consisting of 1∼6 μm-thick ZnO thin films deposited on Si wafer was designed, fabricated, and characterized in this study. Photolithographic protocols for interdigitated transducers (IDTs) and surface modification using fluoroalkylsilane are employed with the aim of droplet-based microfluidic actuations in bio-microsystems. A ZnO thin film was grown on a 4′ silicon wafer with c-axis orientation, an average roughness of 11.6 nm, and a small grain size of 20 nm. It was found that the resonant frequencies (Rayleigh and Sezawa modes) of SAW devices move to a lower frequency range as the thickness of the ZnO thin films increases. Through the silane surface modification, a hydrophobic surface with a contact angle of 114° was obtained. Finally, liquid streaming by acoustic wave was demonstrated by observing the actuation of SiO2 microparticles in a microfluidic drop.

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46

Ahmed Ali, Amal Mohamed, Naser M. Ahmed, Norlaili A. Kabir, Mohammed Khalil Mohammed Ali, Hanan Akhdar, Osamah A. Aldaghri, Khalid Hassan Ibnaouf, and Abdelmoneim Sulieman. "Investigation of X-ray Radiation Detectability Using Fabricated ZnO-PB Based Extended Gate Field-Effect Transistor as X-ray Dosimeters." Applied Sciences 11, no. 23 (November 27, 2021): 11258. http://dx.doi.org/10.3390/app112311258.

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A new design of the MOSFET dosimeter is being developed in a different study to measure the dose delivered to the tissue layers. Development of zinc oxide-Lead (ZnO-Pb) of different thicknesses fabricated by chemical bath deposition were investigated to study their sensitivity following irradiation using a low absorbed dose that can be used in diagnostic and interventional radiology (9, 36.5, and 70 mGy) and high absorbed dose (1, 5, and 10 Gy) of X-ray. The morphology and structure of the as-prepared films were analysed using FESEM and XRD measurements. The device relies on sensing the changes in the local electric field arising from radiation interactions in the absorber, coupled with the semiconductor materials used in this work—ZnO-Pb as the EGFET. Then the sensitivity of all devices was examined. Generally, thin-film devices showed less sensitivity to X-ray than the disk type. The sensitivity of the thin film dropped from 6.66 mV/to 1.42 mV/Gy, while the sensitivity of the ZnO-Pb disk type was 23.3 mV/Gy, which then dropped to 6.30 6.42 mV/Gy. Furthermore, the disk type ZnO-Pb was exposed to a high absorbed dose and obtained a sensitivity value of 0.08 mV/Gy, while the ZnO-Pb thin film obtained 0.01 mV/Gy. This can be related to the influence of thickness on the sensitivity of the dosimeter. However, the device’s performance characteristics, like sensitivity to radiation exposure and operating dose area, were discovered to be strongly dependent on the materials employed, effective atomic number, and thickness of the materials. Based on the results shown above, these devices might be considered a low-cost candidate for real-time -radiation dosimetry at room temperature. Furthermore, the thickest sample of 1 mm showed better sensitivity to radiation, compared to the thinner samples.

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47

Ali, Ghusoon M. "Performance analysis of planar Schottky photodiode based on nanostructured ZnO thin film grown by three different techniques." Journal of Alloys and Compounds 831 (August 2020): 154859. http://dx.doi.org/10.1016/j.jallcom.2020.154859.

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48

Putri, Nur Ajrina, Cuk Imawan, and Vivi Fauzia. "ZnO Thin Films Prepared Using the Ultrasonic Spray Pyrolysis Method for High Performance Metal Oxides-Based Photoconductors." Key Engineering Materials 860 (August 2020): 274–81. http://dx.doi.org/10.4028/www.scientific.net/kem.860.274.

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Zinc oxide (ZnO) has attracted considerable attention because of its potential applications in optoelectronic devices. Many scientists have reported on the preparation of ZnO based photodetectors in metal-semiconductor-metal (MSM) structures where expensive noble metals are used as electrodes. Here, we propose the preparation of full metal-oxide photoconductors by using indium tin oxide (ITO) as the electrodes and ZnO thin films as sensing materials. ZnO thin films were prepared by employing a simple ultrasonic spray pyrolysis (USP) technique with a commercial ultrasonic nebulizer (1.7 MHz). In this work, we developed a high performance ZnO based photodetector on interdigitated ITO with a simple and low-cost USP method. The I-V characteristic shows that ZnO thin film works in a photoconductive mode and has better performance as a UV (325 nm) detector than other wavelengths (505, 625 and 810 nm). As a UV detector, the devices exhibit high sensitivity (1255.51%), high responsivity (22.6 x 103 A/W), high detectivity (1.49 x 1014 Jones), good stability, a fast response time of 0.87 s and a relatively slow recovery time of 34.8 s. This high performance may be related to the large crystallite size that facilitates higher electron mobility.

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Zhao, Li, Ai, and Wen. "Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering." Materials 12, no. 8 (April 18, 2019): 1282. http://dx.doi.org/10.3390/ma12081282.

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A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

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50

Muhammad, S., A. T. Nomaan, A. O. Olaoye, M. Bello, S. H. Zyoud, M. I. Idris, and M. Rashid. "Facile low temperature processed nanostructure ZnO QD based thin films for potential perovskite solar cell: thickness dependence of crystal and electrical properties." Journal of Physics: Conference Series 2411, no. 1 (December 1, 2022): 012011. http://dx.doi.org/10.1088/1742-6596/2411/1/012011.

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Abstract The precipitation-spin coating technique is employed to prepare nanostructure ZnO quantum dot (QD) films at different thicknesses. The X-ray diffraction analysis reveals the polycrystalline thin film growth along (101) plane and crystallinity improvement with thickness rise. The increase in thickness causes an increase (5.14 - 7.73 nm) and a decrease (3.39- 3.22 eV) in grain size and bandgap respectively. At optimized thickness, the ZnO QD thin film exhibits 72 % transmittance with the lowest resistivity of 16.24 x 10-2 Ωcm and highest carrier mobility of 15.38 cm2/Vs rendering it viable for potential utilization as an electron transport layer for perovskite devices.

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