Статті в журналах з теми "ZnO based Schottky Thin film devices"
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R. Sabity, Mowj, and Ghusoon M. Ali. "PERFORMANCE ANALYSIS OF PD/ZNO BASED FLEXIBLE UV MSM PHOTODETECTORS." Journal of Engineering and Sustainable Development 26, no. 5 (September 1, 2022): 98–104. http://dx.doi.org/10.31272/jeasd.26.5.9.
Повний текст джерелаZhang, Teng-Fei, Guo-An Wu, Jiu-Zhen Wang, Yong-Qiang Yu, Deng-Yue Zhang, Dan-Dan Wang, Jing-Bo Jiang, Jia-Mu Wang, and Lin-Bao Luo. "A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction." Nanophotonics 6, no. 5 (November 22, 2016): 1073–81. http://dx.doi.org/10.1515/nanoph-2016-0143.
Повний текст джерелаZhang, Zhi Kun, Ji Ming Bian, and Xiao Qiang Kou. "A Novel ZnO-Based Graphite-Insulator-Semiconductor Diode for Transferable Unipolar Electronic Devices." Advanced Materials Research 710 (June 2013): 29–32. http://dx.doi.org/10.4028/www.scientific.net/amr.710.29.
Повний текст джерелаShen, Mei, Triratna P. Muneshwar, Ken Cadien, Ying Y. Tsui, and Doug Barlage. "Optimization of Copper Schottky Contacts on Nanocrystalline ZnO thin films by Atomic Layer Deposition." MRS Advances 1, no. 50 (2016): 3421–27. http://dx.doi.org/10.1557/adv.2016.357.
Повний текст джерелаZafar, Mubeen, Muhammad Naeem Awais, Muhammad Asif, Amir Razaq, and Gul Amin. "Fabrication and characterization of piezoelectric nanogenerator based on Al/ZnO/Au structure." Microelectronics International 34, no. 1 (January 3, 2017): 35–39. http://dx.doi.org/10.1108/mi-11-2015-0092.
Повний текст джерелаZhao, Shuaitongze, and Shifeng Xu. "Semiconductor Photoanode Photoelectric Properties of Methanol Fuel Cells." Journal of Nanoelectronics and Optoelectronics 16, no. 1 (January 1, 2021): 72–79. http://dx.doi.org/10.1166/jno.2021.2906.
Повний текст джерелаJiang, Dayong, Jiying Zhang, Youming Lu, Kewei Liu, Dongxu Zhao, Zhenzhong Zhang, Dezhen Shen, and Xiwu Fan. "Ultraviolet Schottky detector based on epitaxial ZnO thin film." Solid-State Electronics 52, no. 5 (May 2008): 679–82. http://dx.doi.org/10.1016/j.sse.2007.10.040.
Повний текст джерелаShen, Mei, Amir Afshar, Manisha Gupta, Gem Shoute, Ken Cadien, Ying Yin Tsui, and Doug Barlage. "Electrical Characteristics of TiW/ZnO Schottky contact with ALD and PLD." MRS Proceedings 1635 (2014): 127–32. http://dx.doi.org/10.1557/opl.2014.49.
Повний текст джерелаTrinchi, A., W. Wlodarski, Sandro Santucci, D. Di Claudio, Maurizio Passacantando, C. Cantalini, B. Rout, S. J. Ippolito, K. Kalantar-Zadeh, and G. Sberveglieri. "Microstructural Characterisation of RF Magnetron Sputtered ZnO Thin Films on SiC." Solid State Phenomena 99-100 (July 2004): 123–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.99-100.123.
Повний текст джерелаGinting, M., and J. D. Leslie. "Preparation and electrical properties of heterojunctions of ZnO on Zn3P2 and CdTe." Canadian Journal of Physics 67, no. 4 (April 1, 1989): 448–55. http://dx.doi.org/10.1139/p89-080.
Повний текст джерелаAli, Ghusoon M., Ahmed K. Khalid, and Salah M. Swadi. "Nanoflower ZnO thin-film grown by hydrothermal technique based Schottky diode." Journal of Semiconductors 41, no. 10 (September 28, 2020): 102103. http://dx.doi.org/10.1088/1674-4926/41/10/102103.
Повний текст джерелаKESKENLER, E. F., and M. HAİDAR. "SCHOTTKY DIODE FABRICATION VIA COLD SUBSTRATE EVAPORATED Ag ON SOL-GEL DERIVED ZnO ULTRA-THIN FILMS FOR SEMICONDUCTOR DEVICES." Journal of Ovonic Research 16, no. 5 (September 2020): 309–21. http://dx.doi.org/10.15251/jor.2020.165.309.
Повний текст джерелаYang, X., C. Wang, C. Zhao, W. Tang, X. Gao, J. Yang, B. Liu, X. Qi, G. Du, and J. Cao. "Fabrication of ZnO Thin Film Transistors Based on the Substrate of Glass." Key Engineering Materials 428-429 (January 2010): 501–4. http://dx.doi.org/10.4028/www.scientific.net/kem.428-429.501.
Повний текст джерелаXi, Jun Hua, Xue Ping Chen, Hong Xia Li, Jun Zhang, and Zhen Guo Ji. "Effects of Film Thickness on Resistive Switching Characteristics of ZnO Based ReRAM." Advanced Materials Research 721 (July 2013): 194–98. http://dx.doi.org/10.4028/www.scientific.net/amr.721.194.
Повний текст джерелаDawka, Sahil, Pengjun Duan, Raju Sapkota, and Chris Papadopoulos. "Thin Film Photodetectors Based on Zinc Oxide Nanoinks." ECS Meeting Abstracts MA2022-01, no. 31 (July 7, 2022): 1329. http://dx.doi.org/10.1149/ma2022-01311329mtgabs.
Повний текст джерелаYılmaz, K., M. Parlak, and Ç. Erçelebi. "Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices." Semiconductor Science and Technology 22, no. 12 (October 26, 2007): 1268–71. http://dx.doi.org/10.1088/0268-1242/22/12/004.
Повний текст джерелаHernandez-Como, N., A. Rodriguez-Lopez, F. J. Hernandez-Cuevas, J. Munguia, R. Garcia, R. Baca-Arroyo, and M. Aleman. "Current–voltage–temperature characteristics of PEDOT:PSS/ZnO thin film-based Schottky barrier diodes." Semiconductor Science and Technology 31, no. 11 (September 27, 2016): 115007. http://dx.doi.org/10.1088/0268-1242/31/11/115007.
Повний текст джерелаM. Ali, Ghusoon, and P. Chakrabarti. "Thermal Stability of Sol-Gel Deposited Thin Film Zno-Based Schottky Ultraviolet Photodetectors." Engineering and Technology Journal 32, no. 4B (April 1, 2014): 720–28. http://dx.doi.org/10.30684/etj.32.4b.12.
Повний текст джерелаShan, Yue, Yan Hong Wu, Dong Xing Wang, Yue Zhang, Jia Bin Chen, Jing Hua Yin, and Hong Zhao. "The Preparation and Characteristics Analysis of ZnO/Ni/ZnO Schottky Junction TFTs." Advanced Materials Research 981 (July 2014): 834–37. http://dx.doi.org/10.4028/www.scientific.net/amr.981.834.
Повний текст джерелаSingh, Budhi, and Subhasis Ghosh. "Highly Conducting Gallium-Doped ZnO Thin Film as Transparent Schottky Contact for Organic- Semiconductor-Based Schottky Diodes." Journal of Electronic Materials 44, no. 8 (April 22, 2015): 2663–69. http://dx.doi.org/10.1007/s11664-015-3783-8.
Повний текст джерелаSingh, Mandeep, Gerardo Palazzo, Giuseppe Romanazzi, Gian Paolo Suranna, Nicoletta Ditaranto, Cinzia Di Franco, Maria Vittoria Santacroce, et al. "Bio-sorbable, liquid electrolyte gated thin-film transistor based on a solution-processed zinc oxide layer." Faraday Discuss. 174 (2014): 383–98. http://dx.doi.org/10.1039/c4fd00081a.
Повний текст джерелаLi, Hong Xia, Dong Dong Shen, Wei Qing Ke, Jun Hua Xi, Zhe Kong, and Zhen Guo Ji. "Fabrication and Characterization of Transparent ZnO Film Based Resistive Switching Devices." Key Engineering Materials 609-610 (April 2014): 565–70. http://dx.doi.org/10.4028/www.scientific.net/kem.609-610.565.
Повний текст джерелаIqbal, Tahir, M. Irfan, Shahid M. Ramay, Hamid M. Gaithan, Asif Mahmood, and Murtaza Saleem. "Investigations on ZnO/polymer nanocomposite thin film for polymer based devices." Materials Research Express 6, no. 7 (April 5, 2019): 075322. http://dx.doi.org/10.1088/2053-1591/ab1316.
Повний текст джерелаT.Armoot, Shahad, and Ghusoon M. Ali. "NANORODS ZnO THIN FILM GROWN BY HYDROTHERMAL METHOD BASED PLANAR AND VERTICAL PD/ZnO SCHOTTKY DIODE CONFIGURATIONS." Journal of Engineering and Sustainable Development 24, special (August 1, 2020): 199–205. http://dx.doi.org/10.31272/jeasd.conf.1.22.
Повний текст джерелаLuo, Jack K., Y. Q. Fu, Greg Ashley, and Williams I. Milne. "Integrated ZnO Film Based Acoustic Wave Microfluidics and Biosensors." Advances in Science and Technology 67 (October 2010): 49–58. http://dx.doi.org/10.4028/www.scientific.net/ast.67.49.
Повний текст джерелаLiu, Y., J. Yu, and P. T. Lai. "Investigation of WO3/ZnO thin-film heterojunction-based Schottky diodes for H2 gas sensing." International Journal of Hydrogen Energy 39, no. 19 (June 2014): 10313–19. http://dx.doi.org/10.1016/j.ijhydene.2014.04.155.
Повний текст джерелаDai, Zhen Qing, Bing Hui, and Ya Fei Zhang. "A Simple and Sufficient Method to Fabricate ZnO Nanowire Thin-Film Transistors." Advanced Materials Research 335-336 (September 2011): 451–54. http://dx.doi.org/10.4028/www.scientific.net/amr.335-336.451.
Повний текст джерелаKumar, Ashish, Arathy Varghese, Shriniwas Yadav, Mahanth Prasad, Vijay Janyani, and R. P. Yadav. "Influence of Temperature on Graphene/ZnO Heterojunction Schottky Diode Characteristics." Journal of Nanoscience and Nanotechnology 21, no. 5 (May 1, 2021): 3165–70. http://dx.doi.org/10.1166/jnn.2021.19084.
Повний текст джерелаNeaime, Chrystelle, Fabien Grasset, and Tangi Aubert. "Band-Gap Engineering Based on Ti@ZnO Nanocolloids: Tunable Optical Properties." Key Engineering Materials 617 (June 2014): 161–65. http://dx.doi.org/10.4028/www.scientific.net/kem.617.161.
Повний текст джерелаYadav, Aniruddh Bahadur, Amritanshu Pandey, Divya Somvanshi, and Satyabrata Jit. "Sol-Gel-Based Highly Sensitive Pd/n-ZnO Thin Film/n-Si Schottky Ultraviolet Photodiodes." IEEE Transactions on Electron Devices 62, no. 6 (June 2015): 1879–84. http://dx.doi.org/10.1109/ted.2015.2423322.
Повний текст джерелаAli, Ghusoon M., and Parthasarathi Chakrabarti. "Fabrication and characterization of thin film ZnO Schottky contacts based UV photodetectors: A comparative study." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30, no. 3 (May 2012): 031206. http://dx.doi.org/10.1116/1.3701945.
Повний текст джерелаRoy, S., S. Das, and C. K. Sarkar. "Investigation of nanostructured Pd–Ag/n-ZnO thin film based Schottky junction for methane sensing." International Nano Letters 6, no. 3 (July 7, 2016): 199–210. http://dx.doi.org/10.1007/s40089-016-0187-6.
Повний текст джерелаKumar, Ashish, Arathy Varghese, and Vijay Janyani. "Fabrication of graphene–ZnO heterostructure-based flexible and thin platform-based UV detector." Journal of Materials Science: Materials in Electronics 33, no. 7 (December 22, 2021): 3880–90. http://dx.doi.org/10.1007/s10854-021-07578-8.
Повний текст джерелаKumar, Manoj, Hakyung Jeong, and Dongjin Lee. "Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface." RSC Advances 7, no. 44 (2017): 27699–706. http://dx.doi.org/10.1039/c7ra03460a.
Повний текст джерелаCardarilli, Gian Carlo, Gaurav Mani Khanal, Luca Di Nunzio, Marco Re, Rocco Fazzolari, and Raj Kumar. "Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device." Electronics 9, no. 2 (February 7, 2020): 287. http://dx.doi.org/10.3390/electronics9020287.
Повний текст джерелаDan, Wen Chao, Ya Dong Jiang, Hui Ling Tai, Guang Zhong Xie, Xian Li, Chang Jie Fu, and Ze Wu. "The Formaldehyde OTFT Sensor Based on the Airbrushed P3HT/ZnO Composite Thin Film." Key Engineering Materials 531-532 (December 2012): 400–403. http://dx.doi.org/10.4028/www.scientific.net/kem.531-532.400.
Повний текст джерелаRoy, M. S., G. D. Sharma, and S. K. Gupta. "Charge conduction process and photovoltaic effects in thiazole yellow (TY) thin film based Schottky devices." Thin Solid Films 310, no. 1-2 (November 1997): 279–88. http://dx.doi.org/10.1016/s0040-6090(97)00394-5.
Повний текст джерелаRaj, V. Bhasker, Harpreet Singh, A. Theodore Nimal, M. U. Sharma, Monika Tomar, and Vinay Gupta. "Utilization of Mass and Elastic Loading in Oxide Materials Based SAW Devices for the Detection of Mustard Gas Simulant." Advanced Materials Research 488-489 (March 2012): 1558–62. http://dx.doi.org/10.4028/www.scientific.net/amr.488-489.1558.
Повний текст джерелаKamiya, Toshio, and Masashi Kawasaki. "ZnO-Based Semiconductors as Building Blocks for Active Devices." MRS Bulletin 33, no. 11 (November 2008): 1061–66. http://dx.doi.org/10.1557/mrs2008.226.
Повний текст джерелаMa, Hong Yu, En Jie Ding, and Zeng Liang Shi. "ZnO Field-Effect Transistor Fabricated by RF Magnetron Suputtering and Lithographic/Wet Etching Processes." Key Engineering Materials 480-481 (June 2011): 605–8. http://dx.doi.org/10.4028/www.scientific.net/kem.480-481.605.
Повний текст джерелаCheng, Chien Chuan, Re Ching Lin, Wei Tsai Chang, Ying Chung Chen, Kuo Sheng Kao, and Sin Liang Ou. "Shear Mode ZnO Thin Film Applied in FBAR Sensor." Advanced Materials Research 201-203 (February 2011): 718–21. http://dx.doi.org/10.4028/www.scientific.net/amr.201-203.718.
Повний текст джерелаZhang, Jiawei, Josh Wilson, and Aimin Song. "(Invited, Digital Presentation) Oxide TFTs Based on Semiconductors and Semimetals." ECS Meeting Abstracts MA2022-02, no. 35 (October 9, 2022): 1263. http://dx.doi.org/10.1149/ma2022-02351263mtgabs.
Повний текст джерелаHabibi, Mehdi, and Maryam Fanaei. "A DNA hybridization detection sensor based on photo biased ZnO thin film FET devices." Sensor Review 36, no. 4 (September 19, 2016): 368–76. http://dx.doi.org/10.1108/sr-04-2016-0074.
Повний текст джерелаChen, Jinkai, Wenbo Wang, Weipeng Xuan, Xiaozhi Wang, Shurong Dong, Sean Garner, Pat Cimo, and Jikui Luo. "Flexible surface acoustic wave broadband strain sensors based on ultra-thin flexible glass substrate." MRS Advances 1, no. 21 (2016): 1519–24. http://dx.doi.org/10.1557/adv.2016.110.
Повний текст джерелаLee, Dae-Sik, Jikui Luo, Yongqing Fu, William I. Milne, Nae-Man Park, Sang Hyeob Kim, Mun Yeon Jung, and Sunglyul Maeng. "Nanocrystalline ZnO Film Layer on Silicon and its Application to Surface Acoustic Wave-Based Streaming." Journal of Nanoscience and Nanotechnology 8, no. 9 (September 1, 2008): 4626–29. http://dx.doi.org/10.1166/jnn.2008.ic44.
Повний текст джерелаAhmed Ali, Amal Mohamed, Naser M. Ahmed, Norlaili A. Kabir, Mohammed Khalil Mohammed Ali, Hanan Akhdar, Osamah A. Aldaghri, Khalid Hassan Ibnaouf, and Abdelmoneim Sulieman. "Investigation of X-ray Radiation Detectability Using Fabricated ZnO-PB Based Extended Gate Field-Effect Transistor as X-ray Dosimeters." Applied Sciences 11, no. 23 (November 27, 2021): 11258. http://dx.doi.org/10.3390/app112311258.
Повний текст джерелаAli, Ghusoon M. "Performance analysis of planar Schottky photodiode based on nanostructured ZnO thin film grown by three different techniques." Journal of Alloys and Compounds 831 (August 2020): 154859. http://dx.doi.org/10.1016/j.jallcom.2020.154859.
Повний текст джерелаPutri, Nur Ajrina, Cuk Imawan, and Vivi Fauzia. "ZnO Thin Films Prepared Using the Ultrasonic Spray Pyrolysis Method for High Performance Metal Oxides-Based Photoconductors." Key Engineering Materials 860 (August 2020): 274–81. http://dx.doi.org/10.4028/www.scientific.net/kem.860.274.
Повний текст джерелаZhao, Li, Ai, and Wen. "Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering." Materials 12, no. 8 (April 18, 2019): 1282. http://dx.doi.org/10.3390/ma12081282.
Повний текст джерелаMuhammad, S., A. T. Nomaan, A. O. Olaoye, M. Bello, S. H. Zyoud, M. I. Idris, and M. Rashid. "Facile low temperature processed nanostructure ZnO QD based thin films for potential perovskite solar cell: thickness dependence of crystal and electrical properties." Journal of Physics: Conference Series 2411, no. 1 (December 1, 2022): 012011. http://dx.doi.org/10.1088/1742-6596/2411/1/012011.
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