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Статті в журналах з теми "ZnO based Schottky Thin film devices"
R. Sabity, Mowj, and Ghusoon M. Ali. "PERFORMANCE ANALYSIS OF PD/ZNO BASED FLEXIBLE UV MSM PHOTODETECTORS." Journal of Engineering and Sustainable Development 26, no. 5 (September 1, 2022): 98–104. http://dx.doi.org/10.31272/jeasd.26.5.9.
Повний текст джерелаZhang, Teng-Fei, Guo-An Wu, Jiu-Zhen Wang, Yong-Qiang Yu, Deng-Yue Zhang, Dan-Dan Wang, Jing-Bo Jiang, Jia-Mu Wang, and Lin-Bao Luo. "A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction." Nanophotonics 6, no. 5 (November 22, 2016): 1073–81. http://dx.doi.org/10.1515/nanoph-2016-0143.
Повний текст джерелаZhang, Zhi Kun, Ji Ming Bian, and Xiao Qiang Kou. "A Novel ZnO-Based Graphite-Insulator-Semiconductor Diode for Transferable Unipolar Electronic Devices." Advanced Materials Research 710 (June 2013): 29–32. http://dx.doi.org/10.4028/www.scientific.net/amr.710.29.
Повний текст джерелаShen, Mei, Triratna P. Muneshwar, Ken Cadien, Ying Y. Tsui, and Doug Barlage. "Optimization of Copper Schottky Contacts on Nanocrystalline ZnO thin films by Atomic Layer Deposition." MRS Advances 1, no. 50 (2016): 3421–27. http://dx.doi.org/10.1557/adv.2016.357.
Повний текст джерелаZafar, Mubeen, Muhammad Naeem Awais, Muhammad Asif, Amir Razaq, and Gul Amin. "Fabrication and characterization of piezoelectric nanogenerator based on Al/ZnO/Au structure." Microelectronics International 34, no. 1 (January 3, 2017): 35–39. http://dx.doi.org/10.1108/mi-11-2015-0092.
Повний текст джерелаZhao, Shuaitongze, and Shifeng Xu. "Semiconductor Photoanode Photoelectric Properties of Methanol Fuel Cells." Journal of Nanoelectronics and Optoelectronics 16, no. 1 (January 1, 2021): 72–79. http://dx.doi.org/10.1166/jno.2021.2906.
Повний текст джерелаJiang, Dayong, Jiying Zhang, Youming Lu, Kewei Liu, Dongxu Zhao, Zhenzhong Zhang, Dezhen Shen, and Xiwu Fan. "Ultraviolet Schottky detector based on epitaxial ZnO thin film." Solid-State Electronics 52, no. 5 (May 2008): 679–82. http://dx.doi.org/10.1016/j.sse.2007.10.040.
Повний текст джерелаShen, Mei, Amir Afshar, Manisha Gupta, Gem Shoute, Ken Cadien, Ying Yin Tsui, and Doug Barlage. "Electrical Characteristics of TiW/ZnO Schottky contact with ALD and PLD." MRS Proceedings 1635 (2014): 127–32. http://dx.doi.org/10.1557/opl.2014.49.
Повний текст джерелаTrinchi, A., W. Wlodarski, Sandro Santucci, D. Di Claudio, Maurizio Passacantando, C. Cantalini, B. Rout, S. J. Ippolito, K. Kalantar-Zadeh, and G. Sberveglieri. "Microstructural Characterisation of RF Magnetron Sputtered ZnO Thin Films on SiC." Solid State Phenomena 99-100 (July 2004): 123–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.99-100.123.
Повний текст джерелаGinting, M., and J. D. Leslie. "Preparation and electrical properties of heterojunctions of ZnO on Zn3P2 and CdTe." Canadian Journal of Physics 67, no. 4 (April 1, 1989): 448–55. http://dx.doi.org/10.1139/p89-080.
Повний текст джерелаДисертації з теми "ZnO based Schottky Thin film devices"
Zhang, Jiawei. "Oxide-semiconductor-based thin-film electronic devices." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/oxidesemiconductorbased-thinfilm-electronic-devices(c8cde776-b68b-47b5-ab63-382a86dbb94b).html.
Повний текст джерелаYilmaz, Koray. "Investigation Of Inse Thin Film Based Devices." Phd thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/3/12605431/index.pdf.
Повний текст джерела#61527
.cm)-1 at room temperature. Cd doping and post-depositional annealing effect on the samples were investigated and it was observed that annealing at 100 oC did not show any significant effect on the film properties, whereas the conductivity of the samples increased as the Cd content increases. Temperature dependent I-V and Hall effect measurements have shown that conductivity and carrier concentration increases with increasing absolute temperature while mobility is almost temperature independent in the studied temperature range of 100-430 K. The structural and electrical analysis on the as-grown CdS thin films have shown that the films were polycrystalline with n-type conductivity. Temperature dependent conductivity and Hall effect measurements have indicated that conductivity, mobility and carrier concentrations increases with increasing temperature. Transmission measurements on the as-grown InSe and CdS films revealed optical band gaps around 1.74 and 2.36 eV, respectively. Schottky diode structures in the form of TO/p-InSe/Metal were fabricated with a contact area of around 8x10-3 cm2 and characterized. The best rectifying devices obtained with Ag contacts while diodes with Au contacts have shown slight rectification. The ideality factor and barrier height of the best rectifying structure were determined to be 2.0 and 0.7 eV, respectively. Illuminated I-V measurements revealed open-circuit voltages around 300 mV with short circuit current 3.2x10-7 A. High series resistance effect was observed for the structure which was found to be around 588 &
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. Validity of SCLC mechanism for Schottky structures was also investigated and it was found that the mechanism was related with the bulk of InSe itself. Heterostructures were obtained in the form of TO/n-CdS/p-InSe/Metal and the devices with Au and C contacts have shown the best photovoltaic response with open circuit voltage around 400 mV and short circuit current 4.9x10-8 A. The ideality factor of the cells was found to be around 2.5. High series resistance effect was also observed for the heterojunction devices and the fill factors were determined to be around 0.4 which explains low efficiencies observed for the devices.
Pinkett, Shawn L. "Techniques to facilitate the fabrication of ZnO-based thin film bulk acoustic wave devices." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/14889.
Повний текст джерелаTrivedi, Kruti. "Design, Fabrication and Characterization of ZnO based Thin Film Schottky Diodes and Transistors." Thesis, 2022. https://etd.iisc.ac.in/handle/2005/5821.
Повний текст джерелаYenesew, Markos, and Markos Yenesew. "The Fabrication of Gas Sensing and Optoelectronic Devices Based on ZnO Nanostructures with Composites of Thin Film Metallic Glass and Ultrananocrystalline Diamond." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/d7332x.
Повний текст джерела國立臺灣科技大學
光電工程研究所
106
Abstract In this Ph.D. thesis, composites of ultrananocrystalline diamond (UNCD), thin film metallic glass (TFMG), and a forest of zinc oxide (ZnO) nanostructures (nanorods and nanotubes) have been developed for gas sensing and optoelectronic applications. The composite-structures provide a number of synergetic properties including a large surface area, optimized crystallinity, work function, electrical properties, and surface passivation layers. The ZnO based composite-structures offer good performance in applications for hydrogen gas sensors and ultraviolet (UV) photodetectors. Simple two-step hydrothermal method in conjunction with microwave plasma enhanced chemical vapor deposition (MPECVD) system have been applied to synthesize ZnO nanorods and UNCD films, respectively. Additionally, radio frequency (RF) magnetron sputtering technique was used for the deposition of TFMG. The grown ZnO-based composite-structures in this thesis emphasized controlling the surface morphology of UNCD films beneath ZnO nanostructures. Defect-controlled gas sensitivity were investigated by varying deposition time of UNCD films. It is found that a partially grown UNCD films that were deposited for 7.5 min are the optimized underlayers for hydrogen gas sensing applications. These optimized ZnO-based composite structures exhibit extremely higher gas response than that of the pristine ZnO sensor. The reason for the improvement in sensing performance of the composite-structures have been investigated in terms of the defect-related sensitivity and energy band theory of the heterostructures. Furthermore, in this thesis, a metal-semiconductor-metal (MSM) UV photodetectors have been fabricated by using a silicon substrate on top of which a silver paste was deposited as an electrode. Bilayer of TFMG/ZnO nanotubes were grown on UNCD films and this ZnO-based composite-structures have enhanced their optoelectronic properties. The nanostructures are characterized by SEM, EDX, TEM, HRTEM, XRD, Raman, and PL spectroscopy. From the characterization of the materials, we observed that these nanostructures emit a ~ 377 nm (UV) usually called the near band edge emission and a band green band related to the defects and surface states at about 600 nm. The ZnO-based composite-structures are successfully synthesized at low manufacturing temperatures. This dissertation gives an overview of the optical properties of composites of UNCD, TFMG, and ZnO nanostructures and proposes an effective way to enhance the efficiency of optoelectronic and hydrogen gas sensing devices. The fabrication of ZnO-based composite- structures will be useful for the development of next-generation devices.
Частини книг з теми "ZnO based Schottky Thin film devices"
Mahaboob Jilani, S., and P. Banerji. "Effect of ZnO Loading on the Electrical Characteristics of Graphene Oxide-ZnO Based Thin Film Transistors." In Physics of Semiconductor Devices, 615–16. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_156.
Повний текст джерелаBarua, Sreeparna, Anup Dey, Subhashis Roy, and Subir Kumar Sarkar. "Comparative Study of n-ZnO/SiO2/p-Si and Pd/n-ZnO/SiO2/p-Si Thin Film-Based H2 Sensor Fabricated by Sol-gel Process." In Advances in Communication, Devices and Networking, 79–85. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7901-6_10.
Повний текст джерелаLiu, Weizhen, Cen Zhang, Haiyang Xu, and Yichun Liu. "ZnO-based ultraviolet light-emitting materials and devices." In Semiconducting Metal Oxide Thin-Film Transistors. IOP Publishing, 2020. http://dx.doi.org/10.1088/978-0-7503-2556-1ch4.
Повний текст джерелаMatsui, Hiroaki. "Biological Sensing Using Infrared SPR Devices Based on ZnO." In Biomedical Engineering. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.104562.
Повний текст джерелаRobinson Azariah John Chelliah, Cyril, and Rajesh Swaminathan. "Binary Metal Oxides Thin Films Prepared from Pulsed Laser Deposition." In Practical Applications of Laser Ablation. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.96161.
Повний текст джерелаТези доповідей конференцій з теми "ZnO based Schottky Thin film devices"
Varma, Tarun, C. Periasamy, and Dharmendar Boolchandani. "Electrical and UV detection properties of ZnO thin film based schottky contacts deposited by RF magnetron sputtering." In 2017 Conference on Emerging Devices and Smart Systems (ICEDSS). IEEE, 2017. http://dx.doi.org/10.1109/icedss.2017.8073656.
Повний текст джерелаRajan, Lintu, C. Periasamy, and Vineet Sahula. "Noble metal schottky contacts on nanocrystalline RF sputtered ZnO thin film." In 2017 Conference on Emerging Devices and Smart Systems (ICEDSS). IEEE, 2017. http://dx.doi.org/10.1109/icedss.2017.8073660.
Повний текст джерелаArmoot, Shahad T., and Ghusoon M. Ali. "Monocrystalline ZnO Nanorods Thin-film based Schottky Barrier Diode." In 2022 IEEE 22nd International Conference on Nanotechnology (NANO). IEEE, 2022. http://dx.doi.org/10.1109/nano54668.2022.9928680.
Повний текст джерелаRogers, David J., Ferechteh Hosseini Teherani, Alireza Yasan, Ryan P. McClintock, Kathryn Mayes, Shaban R. Darvish, Patrick Kung, Manijeh Razeghi, and Guy Garry. "ZnO thin film templates for GaN-based devices." In Integrated Optoelectronic Devices 2005, edited by Manijeh Razeghi and Gail J. Brown. SPIE, 2005. http://dx.doi.org/10.1117/12.596912.
Повний текст джерелаShin, W. C., K. Remashan, M. S. Oh, S. J. Park, and J. H. Jang. "Ring Oscillator Circuit based on ZnO Thin Film Transistors." In 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.g-8-3.
Повний текст джерелаAli, Ghusoon M., and P. Chakrabarti. "Fabrication and characterization of nanostructure thin film ZnO Schottky contacts based UV photodetectors." In SPIE NanoScience + Engineering, edited by Eva M. Campo, Elizabeth A. Dobisz, and Louay A. Eldada. SPIE, 2013. http://dx.doi.org/10.1117/12.2044921.
Повний текст джерелаWei, Yuefan, Zhaoyao Zhan, Hejun Du, and Van-Thai Tran. "Influence of annealing to the defect of inkjet-printed ZnO thin film." In Oxide-based Materials and Devices IX, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2018. http://dx.doi.org/10.1117/12.2286856.
Повний текст джерелаChakrabarti, Subhananda, Punam Murkute, Hemant Ghadi, Shantanu Saha, and Vinayak Chavan. "Temperature-dependent phosphorous dopant activation in ZnO thin film deposited using plasma immersion ion implantation." In Oxide-based Materials and Devices IX, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2018. http://dx.doi.org/10.1117/12.2288944.
Повний текст джерелаChen, K. J., F. Y. Hung, S. J. Chang, and S. J. Young. "Physical Characteristic of UV Photodetectors based on Sol-gel Derived ZnO Thin Film." In 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.p-9-4.
Повний текст джерелаHung, Ching-Wen, Huey-Ing Chen, Tzu-Pin Chen, Tsung-Han Tsai, and Wen-Chau Liu. "Hydrogen-Sensing Behaviors of an InAlAs-Based Schottky Diode with a Pt Catalytic Thin Film." In 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.p-6-10.
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