Дисертації з теми "Zn/Cu based cells"
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Platzer-Björkman, Charlotte. "Band Alignment Between ZnO-Based and Cu(In,Ga)Se2 Thin Films for High Efficiency Solar Cells." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-6263.
Повний текст джерелаHildebrandt, Thibaud. "Optimisation des interfaces absorbeur/couche tampon/fenêtre avant dans les cellules solaires à base de Cu(In,Ga)Se2." Thesis, Paris 6, 2014. http://www.theses.fr/2014PA066720.
Повний текст джерелаThe replacement of CdS-based buffer layer in Cu(In,Ga)Se2 solar cells has been one of the main challenges of the research community for the last decade. Today, one of the most promising alternative material is the chemically bath deposited Zn(S,O,OH). Because of its low deposition rate and of metastable behavior, it becomes necessary to proceed to an optimization of experimental conditions and of the various interfaces. The first part of this work has been dedicated to the optimization of the deposition bath thanks to the introduction of new additives. It has been possible to underline the additive effects on both the deposition rate and on the chemical composition of the deposited layers. The second part of this work has been dedicated to the optimization of the (Zn,Mg)O/ZnO:Al window layer. Thanks to an improvement of the sputtering conditions, it has been possible to reduce metastability of the solar cells, and to limit sodium migration up to the Zn(S,O,OH) layer. These optimized conditions combined to the variation of the CIGSe surface composition have allowed us to outperform CdS-based references solar cells
Lox, Josephine F. L., Zhiya Dang, Anh Mai Lê, Eileen Hollinger, and Vladimir Lesnyak. "Colloidal Cu–Zn–In–S-Based Disk-Shaped Nanocookies." American Chemical Association, 2019. https://tud.qucosa.de/id/qucosa%3A74324.
Повний текст джерелаHoward, P. "Precipitation and creep in an Al-Zn-Mg-Cu based alloy." Thesis, University of Manchester, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.356709.
Повний текст джерелаGuo, Yanzhi. "Synthesis, characterization and catalytic application of Ru/Sn-and Cu/Zn-based nanocomposites." [S.l.] : [s.n.], 2006. http://deposit.d-nb.de/cgi-bin/dokserv?idn=98188833X.
Повний текст джерелаHreid, Tubshin. "Co-electrodeposition of Cu-Zn-Sn film and synthesis of Cu2ZnSnS4 photovoltaic material." Thesis, Queensland University of Technology, 2016. https://eprints.qut.edu.au/94160/12/Tubshin%20Hreid%20Thesis.pdf.
Повний текст джерелаKühl, Stefanie Verfasser], and Robert [Akademischer Betreuer] [Schlögl. "Synthesis and Characterization of Cu-based Catalysts resulting from Cu,Zn,XHydrotalcite-like Compounds / Stefanie Kühl. Betreuer: Robert Schlögl." Berlin : Universitätsbibliothek der Technischen Universität Berlin, 2012. http://d-nb.info/1021219762/34.
Повний текст джерелаHutchings, K. D. "High throughput combinatorial screening of Cu-Zn-Sn-S thin film libraries for the application of Cu2ZnSnS4 photovoltaic cells." Thesis, Cranfield University, 2014. http://dspace.lib.cranfield.ac.uk/handle/1826/8771.
Повний текст джерелаHultqvist, Adam. "Cadmium Free Buffer Layers and the Influence of their Material Properties on the Performance of Cu(In,Ga)Se2 Solar Cells." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-133112.
Повний текст джерелаFelaktigt tryckt som Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology 717
Sun, Jiqing. "Graphene-based nanomaterials as electrodes for fuel cells and Zn-air batteries." Thesis, Griffith University, 2018. http://hdl.handle.net/10072/380070.
Повний текст джерелаThesis (PhD Doctorate)
Doctor of Philosophy (PhD)
School of Environment and Sc
Science, Environment, Engineering and Technology
Full Text
Fagieh, Taghreed M. "ICP-MS determination of Zn, Cu, Fe and Mn in muscle cells as potential markers of oxidative stress." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/27011.
Повний текст джерелаKämäräinen, A. (Anne). "GIS-based spatial assessment of Au, Ni and Cu-Zn exploration conducted in Central Finnish Lapland." Master's thesis, University of Oulu, 2017. http://urn.fi/URN:NBN:fi:oulu-201705181953.
Повний текст джерелаSantos, Nathália Villa dos. "Efeitos da expressão da Cu, Zn-SOD em cultura primária de células da medula espinhal." reponame:Repositório Institucional da UFABC, 2014.
Знайти повний текст джерелаDissertação (mestrado) - Universidade Federal do ABC. Programa de Pós-Graduação em Biossistemas, 2015.
A proteina Cu,Zn Superoxido Dismutase, uma metalo proteina que atua na dismutacao do ion superoxido em agua e peroxido de hidrogenio, esta presente em todas as celulas do organismo e tambem esta relacionada com doencas neurodegenerativas como Esclerose Lateral Amiotrofica Familia, que acomete neuronios motor. Buscamos contribuir para a elucidacao do papel bioquimico e fisiologico da proteina Cu,Zn-SOD em cultura primaria de celulas da medula espinhal obtidas de neonatos (0-2 dias) de ratos da linhagem Wistar. Para isso, foi avaliado in vitro o papel do estresse oxidativo induzido por 100 ¿ÊM de H2O2 nos tempos de 3 e 6 horas. Os resultados mostraram que celulas de cultura primaria de medula espinhal, quando expostas a estresse oxidativo, levam a ativacao de caspases, portanto encontra-se populacoes em apoptose precoce e tardia, em ambos tempos, comparado ao controle negativo. Tambem foi observado a relocalizacao da proteina SOD1 nas condicoes de estresse oxidativo e controle, estando mais expressa na porcao nuclear e com atividade dismutasica integra. Na porcao citoplasmatica, ha a presenca de Cu,Zn-SOD, no entanto nao mostra atividade.
The protein Cu,Zn-Superoxide Dismutase is a metaloprotein that convert superoxide radicals to molecular oxygen and hydrogen peroxide. This protein is present in all cells of the body and also is related to neurodegenerative diseases as ALS, which affects motor neurons. The objective of this study was contribute to the elucidation of the biochemical and physiological role of the protein Cu,Zn-SOD in primary cultures of spinal cord cells from newborns (0-2 days) of Wistar rats. So we evaluated in vitro the role of oxidative stress induced by 100uM of H2O2 in 3 and 6 hours. The results showed that these cells when exposed to oxidative stress leading to caspase activation in early and late apoptosis in both times, as compared to the negative control. It was also observed relocation of SOD1 protein in conditions of oxidative stress and control, being more expressed in the nuclear portion with integrates activity. However, the cytoplasmic portion of Cu, Zn-SOD was not activated.
Fairbrother, Andrew. "Development of Cu(2)ZnSn(S,Se)(4) based solar cells." Doctoral thesis, Universitat de Barcelona, 2014. http://hdl.handle.net/10803/145615.
Повний текст джерелаEn los últimos años ha habido un rápido desarrollo en las tecnologías de celdas solares basadas en capa delgada, siendo hasta el momento los dispositivos basados en calcopiritas (Cu(In,Ga)Se2) los que han mostrado una mayor eficiencia de conversión fotovoltaica a escala de laboratorio. Sin embargo, y a pesar de tan prometedores resultados, existe una preocupación sobre la viabilidad a medio y largo término de estos materiales debido a la presencia en su composición de elementos relativamente escasos en la corteza terrestre, como son el In y el Ga. Esto ha llevado al desarrollo de tecnologías fotovoltaicas basadas en kesterita (Cu2ZnSn(S,Se)4), que es especialmente prometedora dada su gran similitud con la calcopirita. En este compuesto, el indio y el galio son reemplazados por elementos más abundantes como son el cinc y el estaño. Los valores de eficiencia de los dispositivos aún están por debajo de los del Cu(In,Ga)Se2, pero nuevas investigaciones y técnicas de desarrollo han llevado a importantes avances en los últimos años. A día de hoy, tanto los parámetros de fabricación como la estructura de los dispositivos basados en kesterita han seguido un camino prácticamente idéntico al de las tecnologías basadas en calcopiritas. El objetivo de esta tesis es el de profundizar en el desarrollo de las tecnologías basadas en kesterita, lo que cubre algunos de los retos básicos relacionados con ellas, como son la formación e identificación de fases secundarias o la optimización de las áreas de contacto frontal y posterior. Se ha puesto especial énfasis en la deposición y los procesos térmicos implicados en el crecimiento de este compuesto, y en ver cómo afectan a la posible formación de las fases secundarias y las propiedades del dispositivo. La tesis en sí está estructurada a partir de los diversos estudios publicados en revistas científicas. Dichos estudios incluyen una caracterización detallada por espectroscopia de dispersión Raman, difracción de rayos X, microscopia electrónica de barrido, y otras técnicas. Los puntos principales de este trabajo son: el desarrollo de un ataque químico selectivo para la eliminación del ZnS (una fase secundaria comúnmente presente en este sistema), con la consecuente mejora de las características del dispositivo; la elaboración de un método de sulfo-selenización para la formación de Cu2ZnSn(S,Se)4 a partir de precursores metálicos; y la resolución de cómo influyen los parámetros de los diferentes procesos térmicos en la formación y distribución de las fases.
Schumann, Julia [Verfasser], Robert [Akademischer Betreuer] Schlögl, Reinhard [Akademischer Betreuer] Schomäcker, and Malte [Akademischer Betreuer] Behrens. "Cu, Zn-based catalysts for methanol synthesis / Julia Schumann. Gutachter: Reinhard Schomäcker ; Robert Schlögl ; Malte Behrens. Betreuer: Robert Schlögl." Berlin : Technische Universität Berlin, 2015. http://d-nb.info/1069578398/34.
Повний текст джерелаGouillart, Louis. "Development of ultrathin Cu(In,Ga)Se ₂ –based solar cells with reflective back contacts." Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPASS007.
Повний текст джерелаReducing the absorber thickness of thin-film photovoltaic devices is a promising way to improve their industrial competitiveness, thanks to a lower material usage and an increased throughput. It can also increase their efficiency due to a shorter pathway for the separation of photogenerated charge carriers. Still, the efficiency of ultrathin Cu(In,Ga)Se ₂ -based (CIGS) solar cells , which have an absorber thickness ≤500 nm that is approximately 5 times thinner than standard devices, is limited by two phenomena: the non-radiative recombination of charge carriers at the back contact and the incomplete absorption of the incident light. Several strategies were studied in order to mitigate those losses. First, the composition of ultrathin CIGS layers was optimized to create a grading of the semiconductor’s conduction band minimum. The resulting electric field contributes to a better charge carrier separation and a lower back contact recombination rate. The incorporation of silver in the CIGS composition greatly improved the performances of ultrathin cells, leading to an efficiency of 14.9% (540 nm of ACIGS, without antireflection coating), close to the current record of 15.2% (490 nm of CIGS, with antireflection coating). Besides, the addition of an alumina passivation layer at the interface between CIGS (470 nm) and Mo was also investigated, and resulted in an improvement of the open-circuit voltage of 55 mV. Second, a novel architecture of reflective back contacts was developed. It consists of a silver mirror that is encapsulated with layers of transparent conductive oxides. Based on a transmission electron microscopy study, this back contact was shown to be compatible with the co-evaporation of CIGS at 500°C or more. Thanks to a high reflectivity and an ohmic contact with CIGS, it led to an increase of the efficiency from 12.5% to 13.5% and of the short-circuit current from 26.2 mA/cm² to 28.9 mA/cm² as compared to cells with a standard molybdenum back contact. This reflective back contact paves the way toward higher photovoltaic efficiencies as well as novel strategies for further light trapping
Khanal, Rajendra R. "Carbon Single Wall Nanotubes: Low Barrier, Cu- Free Back Contact to CdTe Based Solar Cells." University of Toledo / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1396625969.
Повний текст джерелаPaire, Myriam. "Highly efficient solar cells in low dimensionality based on Cu(In,Ga)Se2 chalcopyrite materials." Paris 6, 2012. http://www.theses.fr/2012PA066439.
Повний текст джерелаIn this thesis we explored the potential of thin film microscale concentrator solar cells. The aim of the study is to develop a highly efficient photovoltaic technology, based on large-area processes for high throughput, and which is raw-material thrifty to meet the constraints of terawatt development. The miniaturization of thin film solar cells leads to a low resistive architecture, with easy thermal management, which is therefore adapted to the concentrating regime. The scale effects are studied from an analytical and numerical point of view. Prototype Cu(In,Ga)Se2 solar cells are fabricated with help of photolithography techniques and tested to evaluate the performance of the microcells. A 5% absolute efficiency increase was measured, which led to a 21. 3% efficiency of a 50 µm diameter microcell at a concentration of ×475. The influence of the incident spectra is highlighted. The specific features of the high illumination regime are studied for the first time on Cu(In,Ga)Se2. The photoconductive behavior of Cu(In,Ga)Se2 is analyzed. The screening of the electric field in the Cu(In,Ga)Se2 heterojunction under high light fluxes is evidenced by simulation and may explain the influence of the illumination level on the collection efficiency observed experimentally. The possibility of an industrial application is tackled via the fabrication of mesa delineated microcells, which proves that the edge surface of the microcells have a low recombination velocity (< 4 103 cm/s). A bottom-up approach is studied via electrodeposition. This selective deposition technique enables the synthesis of CuInSe2 on microelectrodes
Mollica, Fabien. "Optimization of ultra-thin Cu(In,Ga)Se2 based solar cells with alternative back-contacts." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066556/document.
Повний текст джерелаIn the past three years, record efficiency of Cu(In,Ga)Se2 (CIGS) based solar cells has improved from 20% up to 22.6%. These results show that CIGS absorber is ideal for thin-film solar cells, even if this technology could be more competitive with a lower manufacture cost. The fabrication of devices with thinner CIGS absorbers is a way to increase the throughput of a factory and to reduce material consumption. This PhD thesis aims to develop cells with a CIGS thickness below 500 nm instead of the conventional 2.0-2.5 µm. However, as reported in the literature, we observed a decrease in cell performance. We carefully analyzed this effect by the comparison between simulations and sample characterizations: it is attributed, on one hand, to a lack of light absorption in the CIGS layer and, on the other hand, to an increased impact of the back-contact (high recombination and low reflectivity). To resolve these problems, we demonstrated theoretically and experimentally that the use of an alternative back-contact, other than molybdenum, such as a transparent conducting oxide coupled with a light reflector, improves the cell efficiency. To achieve this result, an optimization of the CIGS deposition was necessary. Moreover, we proved that a porous oxide layer inserted between the CIGS and the back-contact limits the charge-carrier recombination and removes some parasitic resistance. Finally, an efficiency of 10.7% was achieved for a 480-nm-thick CIGS solar cell with a SnO2:F back-contact passivated with a porous Al2O3 layer
Wennerberg, Johan. "Design and Stability of Cu(In,Ga)Se2-Based Solar Cell Modules." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-1630.
Повний текст джерелаLee, Yunmi. "Site- and Enantioselective C-C and C-B Bond Forming Reactions Catalyzed by Cu-, Mg-, Zn-, or Al-based N-Heterocyclic Carbene Complexes." Thesis, Boston College, 2010. http://hdl.handle.net/2345/1165.
Повний текст джерелаChapter 1. In this chapter, the ability of chiral bidentate N-heterocyclic carbenes (NHCs) to activate alkylmetal reagents directly in order to promote C‒C bond forming reactions in the absence of a Cu salt is presented. Highly regio- and enantioselective Cu-free allylic alkylation reactions of di- and trisubstituted allylic substrates with organomagnesium, organozinc, and organoaluminum reagents are demonstrated. Chiral bidentate sulfonate-bearing NHC-Zn and NHC-Al complexes are isolated and fully characterized. Based on crystal structures of these catalytic complexes, mechanistic details regarding Cu-free allylic alkylations with alkylmetal reagents are proposed. Chapter 2. New methods for efficient and highly enantioselective Cu-catalyzed allylic alkylation reactions of a variety of trisubstituted allylic substrates with alkylmagnesium and alkyl-, aryl-, 2-furyl-, and 2-thiophenylaluminum reagents are presented. Transformations are promoted by a chiral NHC complex in the presence of commercially available, inexpensive and air stable CuCl2*H2O. Enantiomerically enriched compounds containing difficult-to-access all-carbon quaternary stereogenic centers are obtained. Chapter 3. New methods for highly site- and enantioselective Cu-catalyzed allylic alkylation reactions of allylic phosphates with vinylaluminum reagents are presented. The requisite vinylaluminums are prepared by reaction of readily accessible terminal alkynes with DIBAL-H and used directly without further purification. Vinyl additions are promoted in the presence of a chiral bidentate sulfonate-based NHC complex and a Cu salt. The desired SN2' products are obtained in >98% E selectivities, >98% SN2' selectivities, >98% group selectivities (<2% i-Bu addition) and high enantioselectivities. The enantioselective total synthesis of the natural product bakuchiol highlights the versatility of the one-pot hydroalumination/Cu-catalyzed enantioselective allylic vinylation process. Chapter 4. Efficient and highly site-selective Cu-catalyzed hydroboration reactions of 1,2-disubstituted aryl olefins with bis(pinacolato)diboron (B2(pin)2) are presented. Transformations are promoted by an NHC-Cu complex in the presence of MeOH, affording only secondary β-boronate isomers. A Cu-catalyzed method for the synthesis of enantiomerically enriched secondary alkylboronates promoted by chiral NHC complexes is disclosed. Chapter 5. A new method for efficient and site-selective tandem Cu-catalyzed copper-boron additions to terminal alkynes with B2(pin)2 in the presence of an NHC-Cu complex is demonstrated. In a one-pot process, Cu-catalyzed hydroboration of alkynes provides vinylboronates in situ, which undergo a second site-selective hydroboration to afford vicinal diboronates. Highly Enantiomerically enriched diboronates obtained through Cu-catalyzed enantioselective dihydroboration in the presence of chiral bidentate sulfonate-based NHC-Cu complex are obtained. The control of site selectivity in the first-stage hydroboration of alkynes is critical for efficient and highly enantioselective reactions in the tandem dihydroboration. Functionalizations of the vicinal diboronates described herein underline the significance of the current method
Thesis (PhD) — Boston College, 2010
Submitted to: Boston College. Graduate School of Arts and Sciences
Discipline: Chemistry
Jutteau, Sébastien. "Design, prototyping and characterization of micro-concentrated photovoltaic systems based on Cu(In,Ga) Se2 solar cells." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066666/document.
Повний текст джерелаIn this thesis, we studied the design, prototyping and characterization of micro-concentrated photovoltaic systems based on Cu(In,Ga)Se2 solar cells. The objective is to reduce the use of rare materials using the concentration of light, and benefit from the effect of miniaturization such as heat dissipation and lower resistive losses. First, the optical design of 1D and 2D concentrating systems based on spherical microlenses is presented. Using a ray-tracing software Zemax OpticStudio, we evaluated the best combination of elements, thickness and radii of curvature of the lenses, as well as the tolerances of fabrication and positioning of the system. An optical system of 1 mm thickness with a geometrical ratio of 100 and an angular tolerance of +/- 3.5° has been designed. Second, fabrication processes have been created and optimized to fabricate a 5x5 cm² prototypes with 2500 microcells. The best mini-module showed a concentration factor of 72x with an absolute increase of the efficiency of +1.6%. Third, numerical and experimental studies have been performed on concentrating systems based on Luminescent Solar Concentrators (LSC) and Compound Parabolic Concentrators (CPC). The LSC showed a low concentration factor and suffered from repeatability issues while the CPC is a very efficient solution but its specific geometry makes it difficult to fabricate at the micron scale. Finally, we developed a MATLAB code to estimate the producible energy of the designed systems, in order to evaluate the relevance of future technological choices that will be made
Platzer-Björkman, Charlotte. "Band alignment between ZnO-based and Cu(In,Ga)Se₂ thin films for high efficiency solar cells /." Uppsala : Acta Universitatis Upsaliensis : Universitetsbiblioteket [distributör], 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-6263.
Повний текст джерелаHalbe, Ankush. "CHARACTERIZATION OF MICROSTRUCTURAL AND CHEMICAL FEATURES IN CU-IN-GA-SE-S-BASED THIN-FILM SOLAR CELLS." Master's thesis, University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2694.
Повний текст джерелаM.S.M.S.E.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Materials Science and Engineering
Frisch, Johannes. "Electronic properties of interfaces in polymer based organic photovoltaic cells." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät, 2015. http://dx.doi.org/10.18452/17140.
Повний текст джерелаThe main focus of this work was to provide a comprehensive picture of the energy level alignment at the multitude of interfaces that occur in selected polymer/polymer and polymer/small molecule heterojunction photovoltaic cells. The electronic characterization was performed using photoelectron spectroscopy. Morphology and thickness of spin coated thin films was investigated using a complementary technique approach employing UV-vis absorption spectroscopy, atomic force microscopy, and X ray photoelectron spectroscopy. At the PEDT:PSS anode/polymer interface vacuum level shifts up to 0.65 eV were observed. Polymer deposition decreased the substrate work function (WF even though the polymer ionization energy was several 100 meV higher as the initial PEDT:PSS WF. An in depth analysis of the PEDT:PSS/polymer interface from sub-monolayer to multilayer coverage revealed highly diverse origins for the observed vacuum level shifts. Secondly, investigations of the donor/acceptor interfaces revealed vacuum level shifts up to 0.35 eV that influence the photovoltaic gap (PVG) at the heterojunction and, therefore, the upper limit of the open circuit voltage (VOC) in the device. Correlating device data and all results of the interface analysis, PVG was finally confirmed as an upper limit for VOC. The energy difference (eV) between PVG and experimentally determined VOC, which was assigned to losses in the device, was found to be higher for all polymer heterojunctions compared to polymer/small molecule cells with a minimum at eV = 0.5 eV. Third, cathode/acceptor interface formation was accompanied by interfacial vacuum level shifts of ca. 1 eV caused by Fermi level (EF) pinning at interfacial gap states. The exact position of the acceptor pinning level with respect to EF of the anode determines the strength of the built in field in the device that was found to be fully counterbalanced by a photovoltage induced by in situ illumination of the resulting OPVC-like sample structures.
Deibel, Carsten. "Defect spectroscopy on Cu(In, Ga)(S, Se)2-based heterojunction solar cells role of the damp heat treatment /." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=966279530.
Повний текст джерелаYu, Zhiqiang. "Transient Studies of Ni-, Cu-Based Electrocatalysts in CH4 Solid Oxide Fuel Cell." Akron, OH : University of Akron, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=akron1194625466.
Повний текст джерела"December, 2007." Title from electronic dissertation title page (viewed 03/12/2008) Advisor, Steven S. C. Chuang; Committee members, Lu-Kwang Ju, Edward Evans, W. B. Arbuckle, Stephen Z. D. Cheng; Department Chair, Lu-Kwang Ju; Dean of the College, George K. Haritos; Dean of the Graduate School, George R. Newkome. Includes bibliographical references.
Zhang, Xian. "Atmospheric corrosion of zinc-aluminum and copper-based alloys in chloride-rich environments : Microstructure, corrosion initiation, patina evolution and metal release." Doctoral thesis, KTH, Yt- och korrosionsvetenskap, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-151180.
Повний текст джерелаBättre molekylär förståelse för metallers atmosfäriska korrosion kräver en fördjupad kunskap i det dynamiska samspelet mellan atmosfärens korrosiva beståndsdelar och metallytan. Denna doktorsavhandling omfattar laboratorie- och fältundersökningar av korrosions- och metallfrigöringsprocesser av två grupper av legeringar som exponerats i kloridrika atmosfärsmiljöer: två kommersiella Zn-Al beläggningar på stål, Galfan™ (Zn med 5% Al, förkortat Zn5Al) och Galvalume™ (Zn55Al), samt fyra kopparbaserade legeringar (Cu4Sn, Cu15Zn, Cu40Zn och Cu5Zn5Al). Undersökningar har genomförts i renodlade laboratorie-miljöer med för-deponerade NaCl-partiklar i en atmosfär av varierande relativ fuktighet. Syftet har varit att utvärdera betydelsen av kloriders deposition och legeringarnas mikrostruktur på korrosionsmekanismen samt bildandet av korrosionsprodukter. Jämförelser av korrosionsmekanismer har även gjorts efter flerårsexponeringar av samma legeringar i en marin fältmiljö i Brest, Frankrike. Undersökningarna har baserats på ett brett spektrum av analysmetoder för detaljerade studier dels under pågående atmosfärisk korrosion (in-situ), och dels efter avslutad korrosion (ex-situ). Legeringarnas mikrostruktur och tillhörande variation i ädelhet hos olika faser har undersökts med svepelektronmikroskopi och energidispersiv röntgenmikroanalys (SEM/EDS) samt med en variant av atomkraftsmikroskopi (engelska: scanning Kelvin probe force microscopy, SKPFM). Korrosionsprodukternas tillväxt har analyserats in-situ med infraröd reflektions-absorptionsspektroskopi (IRAS), samt morfologi och sammansättning av bildade korrosionsprodukter ex-situ med SEM/EDS, konfokal Raman mikro-spektroskopi (CRM) samt röntgendiffraktion vid strykande ifall (GIXRD). Det multi-analytiska tillvägagångssättet har medfört att det komplexa samspelet mellan de skilda legeringarnas mikrostruktur, korrosionsinitiering och bildandet av korrosionsprodukter kunnat studeras i detalj. En tydlig påverkan av mikrostruktur på det initiala korrosionsförloppet har kunnat påvisas. Korrosionsinitieringen sker företrädesvis i mer zinkrika faser för såväl Zn-Al- som Cu-Zn-legeringar och orsakas av mikro-galvaniska effekter mellan de mer zinkrika, mindre ädla, faserna och omgivande faser. Deponerade NaCl-partiklar påskyndar den lokala korrosionen oberoende av mikrostruktur. Snarlika sekvenser av korrosionsprodukter har kunnat påvisas såväl efter laboratorie- som fältexponeringar. För Zn-Al-legeringar bildas först ZnO, ZnAl2O4 och/eller Al2O3, därefter Zn6Al2(OH)16CO3·4H2O och Zn2Al(OH)6Cl·2H2O och/eller Zn5(OH)8Cl2·H2O. På ren koppar bildas ett inre skikt dominerat av Cu2O, ett mellanskikt av CuCl och ett yttre skikt med i huvudsak Cu2(OH)3Cl. Beroende på legeringstillsats har även SnO2 och Zn5(OH)6(CO3)2 kunnat identifieras. En mekanism för flagning av korrosionsprodukter på kopparbaserade legeringar i kloridrika atmosfärer har utvecklats. Tendensen för flagning har visat sig vara mycket mer uttalad på ren Cu och Cu4Sn än på Cu15Zn och Cu5Al5Zn. Skillnaden kan förklaras med hjälp av det tidiga bildandet av Zn5(OH)6(CO3)2 och Zn6Al2(OH)16CO3·4H2O på Cu15Zn och Cu5Al5Zn som fördröjer bildandet av CuCl, en föregångare till Cu2(OH)3Cl. Därigenom hämmas även den observerade volymexpansionen som sker när CuCl omvandlas till Cu2(OH)3Cl, en process som visar sig vara den egentliga orsaken till att korrosionsprodukterna flagar. Resultaten bekräftar barriäreffekten hos de mer svårlösliga faserna Zn5(OH)6(CO3)2 och Zn6Al2(OH)16CO3·4H2O, vilken dels resulterar i en minskad växelverkan mellan klorider och de legeringsytor där dessa faser kan bildas, och dels i en reducerad metallfrigöringshastighet.
QC 20140915
Autocorr, RFSR-CT-2009-00015 Corrosion of heterogeneous metal-metal assemblies in the automotive industry
Atmospheric corrosion and environmental metal dispersion from outdoor construction materials
Insignares, Cristina. "Raman scattering based strategies for assessment of advanced chalcopyrite photovoltaic technologies: Characterisation of electrodeposited Cu(In,Ga)(S,Se)2 solar cells." Doctoral thesis, Universitat de Barcelona, 2015. http://hdl.handle.net/10803/384606.
Повний текст джерелаEl principal objetivo de esta tesis es el desarrollo de metodologías basadas en la espectroscopia Raman para el análisis de tecnologías fotovoltaicas Cu(In,Ga)(S,Se)2 avanzadas basadas en procesos electroquímicos, con la identificación y caracterización de parámetros relevantes para la eficiencia de las celdas solares y módulos. El trabajo desarrolla y propone metodologías y herramientas que pueden ser implementadas para aplicaciones de control de calidad y monitorización de procesos a nivel "on-line", contribuyendo a incrementar el rendimiento y la fiabilidad de los procesos involucrados en la fabricación de estos dispositivos. La tesis está estructurada en siete capítulos. El primer capítulo es una introducción a las tecnologías fotovoltaicas de la calcopirita, incluyendo las estrategias actuales de producción y su caracterización óptica por medio de técnicas basadas en espectroscopia Raman; más tarde en el capítulo se presenta la espectroscopia Raman como la técnica principal utilizada en el trabajo y se describe el enfoque abordado en la tesis para el desarrollo de técnicas para la monitorización de los procesos. Los espectros Raman permiten obtener información de parámetros estructurales y químico-físicos de las diferentes capas en la estructura que determinan la eficiencia del dispositivo, como la calidad cristalina y presencia de defectos, composición química, estrés y presencia de fases secundarias. El Segundo capítulo describe los sistemas experimentales que se han desarrollado en el trabajo, y las condiciones experimentales determinadas para garantizar la fiabilidad de las medidas. Una descripción más detallada de la aplicación de la espectroscopia Raman se describe en los siguientes capítulos, que abordan la detección de fases secundarias en la capa del absorbedor que son relevantes para la eficiencia de la celda en dispositivos de alta eficiencia (Capítulo 3), la caracterización química de la región superficial de las capas absorbedoras (Capítulo 4), el espesor de las capa buffer de CdS (capítulo 5) y la conductividad eléctrica de las capas ventana (capítulo 6). El último capítulo de la tesis resume las principales conclusiones del trabajo.
Sáez, Araoz Rodrigo [Verfasser]. "Chemical bath deposition of Zn(S,O) buffer layers and application in Cd-free chalcopyrite-based thin-film solar cells and modules / Rodrigo Sáez Araoz." Berlin : Freie Universität Berlin, 2009. http://d-nb.info/1023816695/34.
Повний текст джерелаHaug, Annegret Veronika [Verfasser], and H. [Akademischer Betreuer] Kalt. "Properties of the Back Contact Interface for Non-Vacuum Deposited Precursor-Based Cu(In,Ga)Se₂ Solar Cells / Annegret Veronika Haug ; Betreuer: H. Kalt." Karlsruhe : KIT-Bibliothek, 2018. http://d-nb.info/1155474317/34.
Повний текст джерелаDuren, Stephan van [Verfasser], Aleksander [Akademischer Betreuer] Gurlo, Aleksander [Gutachter] Gurlo, Walter [Gutachter] Reimers, and Thomas [Gutachter] Unold. "Development of in situ methods for process monitoring and control and characterization of Cu-Zn-Sn-S based thin films / Stephan van Duren ; Gutachter: Aleksander Gurlo, Walter Reimers, Thomas Unold ; Betreuer: Aleksander Gurlo." Berlin : Universitätsverlag der TU Berlin, 2019. http://d-nb.info/1187949019/34.
Повний текст джерелаHauschild, Dirk [Verfasser], and Friedrich Theodor [Gutachter] Reinert. "Electron and soft x-ray spectroscopy of indium sulfide buffer layers and the interfaces in Cu(In,Ga)(S,Se)2-based thin-film solar cells / Dirk Hauschild. Gutachter: Friedrich Theodor Reinert." Würzburg : Universität Würzburg, 2016. http://d-nb.info/1111784574/34.
Повний текст джерелаAbid, Fatma. "Contribution à la robustesse et à l'optimisation fiabiliste des structures Uncertainty of shape memory alloy micro-actuator using generalized polynomial chaos methodUncertainty of shape memory alloy micro-actuator using generalized polynomial chaos method Numerical modeling of shape memory alloy problem in presence of perturbation : application to Cu-Al-Zn-Mn specimen An approach for the reliability-based design optimization of shape memory alloy structure Surrogate models for uncertainty analysis of micro-actuator." Thesis, Normandie, 2019. http://www.theses.fr/2019NORMIR24.
Повний текст джерелаThe design of economic system leads to many advances in the fields of modeling and optimization, allowing the analysis of structures more and more complex. However, optimized designs can suffer from uncertain parameters that may not meet certain reliability criteria. To ensure the proper functioning of the structure, it is important to consider uncertainty study is called the reliability analysis. The integration of reliability analysis in optimization problems is a new discipline introducing reliability criteria in the search for the optimal configuration of structures, this is the domain of reliability optimization (RBDO). This RBDO methodology aims to consider the propagation of uncertainties in the mechanical performance by relying on a probabilistic modeling of input parameter fluctuations. In this context, this thesis focuses on a robust analysis and a reliability optimization of complex mechanical problems. It is important to consider the uncertain parameters of the system to ensure a robust design. The objective of the RBDO method is to design a structure in order to establish a good compromise between the cost and the reliability assurance. As a result, several methods, such as the hybrid method and the optimum safety factor method, have been developed to achieve this goal. To address the complexity of complex mechanical problems with uncertain parameters, methodologies specific to this issue, such as meta-modeling methods, have been developed to build a mechanical substitution model, which at the same time satisfies the efficiency and the precision of the model
Tsao, Hsiang-Wei, and 曹翔崴. "Investigation of Light Soaking Effect on Chemical Bath Deposited Zn(O,S) Buffer Layer-based Cu(In,Ga)(S,Se)2 Thin Film Solar Cells." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/35z5jr.
Повний текст джерелаGuo, Siao-wei, and 郭筱薇. "Developement of High-temperature Lead-free solders: Zn-Sn-Al-Cu Based Alloy." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/d63szw.
Повний текст джерела國立臺灣科技大學
材料科學與工程系
99
Despite numerous studies on the research and development for high-temperature lead free solders, high-lead solder are still in used because high-temperature lead free solders also has been facing several serious problems during these years. Establishing high-temperature lead-free solder is an urgent priority. This study investigates the development of high-temperature lead-free solders and their properties by improve its wettability and oxidation resitivity after addition of Ni and Ge in Zn-Sn-Al-Cu based alloy. The solders are examined for microstructure, thermal properties, mechanical properties and investigate the interfacial reaction between Zn-Sn-Al-Cu based alloy with Cu and Ni/Cu at 300 and 350oC for 1, 2 and 4 hours. The experimental results indicate that the liquilidus temperature of Zn-Sn-Al-Cu based alloys is between 275oC to 375oC with Zn content. As Zn contents increase the (Zn) and CuZn5 increase, therefore resulting in the increase of micro-hardness and ultimate tensile strength and the addition of Al improve mechanical properties. Three or four intermetallic compounds (IMCs) are formed at the interface in the Cu/alloy diffusion couple. The reaction phases are identified as CuZn5, Al4Cu3Zn, ??nphase and CuZn is formed facing to the Cu substrate. The ??nphase is formed or not that is related to Al/Zn ratio. The IMCs are indentified as CuZn5, Al4Cu3Zn, (Zn), (Al) and?n??Sn phase in the alloys near the Ni/Cu substrate after reflow.
Chien-HungLin and 林建宏. "A Study of Fabricating Cu2ZnSnSe4 Solar Cells by Using Selenization of Cosputtered Cu-Zn-Sn Precursors." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/23196977369703739525.
Повний текст джерела國立成功大學
電機工程學系專班
101
The Cu2ZnSnSe4 (CZTSe) is a p-type direct band gap semiconductor with band gap of ~1 eV. Its non toxic, abundant and potential for low cost fabrication are attractive and could be used as an absorber for thin film solar cells. In this thesis, I used co-sputtering method to deposit Copper–Zin-Tin precursors on a soda-lime glass followed by a selenization process to form CZTSe absorber layer. In this study, the influences of the compositions of the precursors, selenazation temperature, and duration on the CZTSe film were investigated. A scanning electron microscopy was used to observe the film’s morphology, crystalline phase and orientation were determined by X-ray diffraction patterns and Raman analysis, and an energy dispersive X-ray spectroscopy was used to analyze the compositions of films and the absorber layer. Finally, CZTSe thin film were fabricated using the following process parameters: stoichiometric but Cu-poor precursor was used followed by a two step selenization process (300℃30 mins and then raise to 530℃ for 30mins). To form the CZTSe thin film solar cell, CZTSe thin film about 2-μm-thick were fabricated followed by sequentially depositing CdS, i-ZnO, Al-doped ZnO (AZO) and Ag electrode on the CZTSe thin film. Conversion efficiency of solar cells were measured, however, no efficiency was obtained from the devices. At the end, reasons of no efficiency is explained and discussed. Methodology to improve solar cell efficiency for future study is suggested.
Hung, Hui-Tzu, and 洪慧慈. "Adhesive Behavior and Interfacial Reaction between Sn-Zn Based Solders and Metallized Cu Substrates." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/66259602083583707244.
Повний текст джерела國立成功大學
材料科學及工程學系碩博士班
92
This research is investigated the interfacial reaction and adhesive behavior between Sn-Zn based solders and metallized Cu substrates. The microstructure and thermal property of Sn-Zn based solders were also studied. The wettability between Sn-Zn based solders and different substrates were investigated with the wetting balance. The adhesive strength between Pb-free solder balls and BGA substrate after reflow process was measured by shear test. The interfacial reaction behavior after dipping and reflow process was investigated by SEM and EPMA. The microstructure of Sn-9Zn alloy consists of ß-Sn matrix and Zn-rich phase. As for Sn-8.55Zn-0.5Ag-0.1Al-0.5Ga alloy, besides the coexistence of ß-Sn matrix and Zn-rich phase, Ag-Zn compound precipitates within the solder matrix. The melting point of Sn-8.55Zn-0.5Ag-0.1Al-0.5Ga alloy was found to be 196.4 ℃. The result of solderability test reveals that the deposition of Sn-Zn based solder on metallized Cu substrate was rough and dull in luster. Sn-8.55Zn-0.5Ag-0.1Al-0.5Ga solder exhibits adequate wettability with the Cu/Ni-P/Au specimen above 250℃. The wetting time is more than 1 sec. Accordingly, the solderability between Sn-8.55Zn-0.5Ag-0.1Al-0.5Ga solder and Au deposited layer needs to be further improved. AuZn3 and Al2Au intermetallic compound(IMC) formed at the interface of Sn-8.55Zn-0.5Ag-0.1Al-0.5Ga solder and Cu/Ni-P/Au after dipping process. After thermal aging, the AuZnx, Al2Au and (Ag.Au)Zn3 formed at the interface. The Ni-P layer does notreact with other element to form IMC. According to the interfacial analysis on the interface between Sn-8.55Zn-0.5Ag-0.1Al-0.5Ga solder and Cu/Au substrate, Al-Au-Zn IMC layer and Cu5Zn8 compound formed at the interface. The shear test data reveals that the adhesive strength of Sn-9Zn solder is higher than that of Sn-8.55Zn-0.5Ag-0.1Al-0.5Ga solder after reflow and longtime thermal aging. The shear strength decreased with increasing aging time. The fracture occurred within the solder balls. In the reflow process, Ag-Zn and Au-Zn compound formed at the interface between Sn-8.55Zn-0.5Ag-0.1Al-0.5Ga solder and BGA substrate. After aged at 150℃ for 1000 hours, Ag-Al-Au and Au-Zn compound formed within solder matrix while Au-Zn and Ni-Zn formed at the substrate side. Al does not react with other element to form IMC.
Chen, Yu-Cheng, and 陳育徵. "Preparation and properties of nanostructure metal oxide and sulfide (Cu, In, Ni, and Zn) for solar cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/9gm6y7.
Повний текст джерела逢甲大學
電機與通訊工程所
100
In this study, the oxide and sulfide materials of Cu, In, Ni, and Zn are prepared by electrodeposition and annealing methods. For NiSx (x = 2, 1, and 2/3), Ni thin films on ITO glass have been prepared by electrodeposition method. Thin films of NiSx are grown by anneal Ni thin films at different temperatures and sulfur powders. The effects of annealing temperatures and sulfur powders are investigated. For sulfide of copper, copper sulfide (CuS) thin films on ITO glass have been prepared by one-step electrodeposition method. The effect of different electrodeposition current on the structural, morphological, and optical properties of CuS thin films is studied. Moreover, thin films of CuyS (y = 1.75, 1.8, 1.95, and 2.0) are grown by annealing CuS thin films at different temperatures and times. The effects of annealing temperatures and times are investigated. The chalcopyrite CuInS2 thin film is fabricated by sulfured Cu-In alloys. Cu-In alloys are deposited on ITO glass by electrodeposition method. When the Cu-In alloys are fabricated, it is put into a glass tube with the pure sulfur powder together. The structural, morphological, and optical properties of CuInS2 thin films are studied. Indium doped Zinc Oxide (IZO) thin films are deposited by a one-step electrodeposition method on ITO glass from aqueous solution. The aqueous solution of Zn(NO3)2 is fixed at 0.05 M. The effects are studied at different concentration of InCl3, and electrodeposition temperatures and voltages. These materials can be used in solar cells.
Chang, Wei-En, and 張瑋恩. "Characterization of Electrodes for Cu(In,Ga)Se2-based solar cells." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/22268750716232241790.
Повний текст джерела國立東華大學
電機工程學系
97
The electrodes for the Cu(In,Ga)Se2-based solar cells were deposited on the glass substrates by the direct-current magnetron sputtering method in this thesis. The correlations between the sputtering parameters and properties of the deposited films were studied by characterizing the electrical, optical, crystallinity, morphology, and compositional properties. Aluminum-doped zinc oxide films of the front electrodes for the Cu(In,Ga)Se2-based solar cells were deposited on corning 1737 glass substrates with a ZnO/Al2O3 target (Al2O3 2wt.%). The dependences of the carrier concentration, carrier mobility, transmittance, crystallinity, grain size, film stress, surface morphology, and composition of the films on the working voltage, working pressure, substrate temperature, working power, substrate-bias, film thickness, target-substrate distance, and O2/Ar flow ratio were investigated, respectively. The properties of as-deposited aluminum-doped zinc oxide films were analyzed by using the Hall-effect Measurement, UV-VIS Spectrophotometer, X-ray Diffraction, Field Emission Scanning Electron Microscopy, and Energy Dispersive Spectrometer Spectrophotometry. The optimal transparent conductive aluminum-doped zinc oxide films were prepared with a target-substrate distance of 3.5cm, substrate temperature of 200℃, sputtering power of 300W, working pressure of 3m torr, and Ar flux rate of 50 sccm, resulting in the film thickness of 462.5 nm, optical transmittance up to 91.36% in the visible range, and electrical resistivity of down to 7.05 Ω-cm. The back electrodes of molybdenum films were deposited on the soda-lime glass substrates with a molybdenum target (3N5). Both the low resistivity and good adhesion of as-deposited Mo films were obtained by varying the sputtering parameters. The high-quality aluminum-doped zinc oxide and molybdenum films were achieved for the front and back contacts of Cu(In,Ga)Se2-based solar cells, respectively.
Guo, Yanzhi [Verfasser]. "Synthesis, characterization and catalytic application of Ru/Sn-and Cu/Zn-based nanocomposites / vorgelegt von Yanzhi Guo." 2006. http://d-nb.info/98188833X/34.
Повний текст джерелаYu, Chi-Yang, and 游濟陽. "Interfacial Reaction, Microstructure Variation, and Impact Reliability of Sn-based Pb-free Solder Joints with Ni, Cu, and Novel Cu-Zn Under Bump Metallurgy." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/15761939746256173998.
Повний текст джерела國立清華大學
材料科學工程學系
101
In the flip-chip (FC) solder joint, solder alloys usually connect with Ni and Cu based under bump metallurgies (UBMs) at chip-side and substrate-side, respectively. The material selection for solder alloys and UBM material is a critical issue to affect the microstructure, phase formation, and the reliability of the solder joints. In this study, the interfacial reaction, microstructure variation, and impact reliability of Sn-based Pb-free solder joints with Ni, Cu, and novel Cu-Zn UBMs are discussed and categorized into six topics. (1) Microstructural variation and interfacial reaction in Ni/Sn-Ag-Cu/Ni assemblies with and without Ni doping Ni and Cu elements cross-interacted between the Cu and Ni UBMs during thermal aging and affected the interfacial reactions at both Cu and Ni sides. Dual-phased (Cu,Ni)6Sn5 intermetallic compounds (IMCs), which has high and low Ni concentration, formed at the solder/Ni interface. In contrast, thicker low-Ni (Cu,Ni)6Sn5 and thin (Cu,Ni)3Sn layers formed at the Cu side. The Ni doping into solder varied the microstructure of solder alloys and the formation of interfacial IMCs. The re-distribution of Ni and Cu was correlated to the formation mechanism of interfacial (Cu,Ni)6Sn5. (2) Effect of dual-phased (Cu,Ni)6Sn5 IMCs on the impact reliability of Sn-Ag-Cu/Ni solder joints By employing the high-speed shear impact test, the impact fracture morphology reveals that the interface of high-Ni (H)/low-Ni (L) (Cu,Ni)6Sn5 facilitates the crack nucleation within the IMC. It is believed that the crack propagation depends on the fracture toughness of interfacial IMCs. The indentation data shows that bulk H-(Cu,Ni)6Sn5 exhibits distinctly lower fracture toughness than bulk L-(Cu,Ni)6Sn5. In correlating the impact fracture behavior and mechanical properties of two kinds of (Cu,Ni)6Sn5, cracks tend to propagate through H-(Cu,Ni)6Sn5 due to the relatively low fracture toughness of H-(Cu,Ni)6Sn5. (3) Development of a novel Cu-Zn UBM for Pb-free solder joints To suppress the thicker IMCs and voids at the solder/Cu interface, the Cu-Zn alloy was designed for a novel UBM material. The interfacial reactions of Sn/Cu-xZn (x = 0, 15 and 30 at.%) solder joints were investigated. Interestingly, the growth of Cu-Sn IMCs was significantly reduced and no void was found in the Sn/Cu-Zn solder joints after thermal aging. Transmission electron microscopy (TEM) images and the field emission electron probe microanalyzer (FE-EPMA) analysis show that there are two types of Zn-rich phases, i.e. CuZn and Cu-Zn-Sn phases, to form in Sn/Cu-Zn joints. The formation mechanisms of IMCs were probed and proposed with regard to the thermodynamics and kinetics. (4) Liquid-state reaction of Sn-Ag-Cu solders and the novel Cu-Zn UBM During the reflow process, Cu and Zn atoms would dissolve from the Cu-Zn UBM into the molten solders, leading to the variation of the composition in the solders. Then, the composition variation further altered the microstructure of the solders. In comparison with the Sn-Ag-Cu/Cu, it was found that the coarser eutectic region and smaller Cu6Sn5 IMCs inside the solder matrix of Sn-Ag-Cu/Cu-Zn. In addition, the interfacial reaction was also affected by Zn dissolution. In this study, it was demonstrated that the microstructural variation and the phase evolution in the solder joints were controlled by the reflow time and the Zn concentration in the Cu-Zn UBM. (5) Characterization of the Cu6(Sn,Zn)5 intermetallic compound Cu6Sn5 is a dominant IMC at the Sn-based solder/Cu joint interface. The crystal structure of Cu6Sn5 varies with temperature. After reflow at 250 oC, the interfacial Cu6Sn5 revealed hexagonal structure (η-Cu6Sn5). During aging at 150 oC, hexagonal η-Cu6Sn5 would transform into monoclinic η’-Cu6Sn5. According to literature, the phase transformation between η’ and η would induce crack easily propagating through the Cu6Sn5 at the solder joint interface. In the novel solder/Cu-Zn joints, and Zn would dissolve into Cu6Sn5 to form the Cu6(Sn,Zn)5 IMC at the interface. X-ray diffraction and differential scanning calorimetry analyses show that doping small amounts of Zn into Cu6(Sn,Zn)5 can stabilize the hexagonal structure during the thermal aging process. Thermodynamic calculation also demonstrates that Zn can stabilize the hexagonal Cu6(Sn,Zn)5. (6) Application of Cu-Zn UBM on the Ni/Sn-Ag-Cu/Cu-Zn assemblies The feasibility of novel Cu-Zn UBM applied for the Ni/solder/Cu-Zn assemblies was also evaluated. In comparison with the Ni/Sn-Ag-Cu/Cu solder joint, Ni/Sn-Ag-Cu/Cu-Zn solder joints revealed thinner Cu6Sn5-based IMCs at both Ni/Sn-Ag-Cu and Sn-Ag-Cu/Cu-Zn interfaces after aging. (Cu,Ni)6(Sn,Zn)5/(Cu,Ni)6Sn5 dual-phase formed at the Ni side while (Cu,Ni)6(Sn,Zn)5 single-phase at the Cu-Zn side. The interfacial IMCs grew very slowly, and no void formed in these Zn-contained solder joints during thermal aging. Additionally, the dissolved Zn in the solder alloy reduced the elemental cross-interaction between the Ni and Cu-Zn substrates. The noticeable thermal stability of Ni/Sn-Ag-Cu/Cu-Zn solder joints is attributed to the Zn re-distribution retarding the reaction of Ni, Cu and Sn. Phase formation and IMCs suppression mechanisms in Ni/Sn-Ag-Cu/Cu-Zn solder joints were probed and discussed. In summary, novel Cu-Zn UBM shows lots of advantages for soldering, including: (I) reduction of Cu-Sn IMCs, (II) suppression of voids at the interface, (III) formation of the a hexagonal Cu6(Sn,Zn)5, and (IV) retardation of the elemental cross-interaction in the Ni/solder/Cu-Zn assemblies. The Cu-Zn alloys could be a potential UBM material for the advanced electronic packaging.
"Buffer layers for Cu(In,Ga)Se2 based thin film solar cell." 2014. http://library.cuhk.edu.hk/record=b6115709.
Повний текст джерела基於本實驗室在生長高質量銅銦鎵硒吸收層的先進技術,本工作重點研究了位於吸收層和透明窗口層之間的緩衝層和高阻窗口層。 這兩層的常規結構是由化學水浴法生長的硫化鎘層和本征氧化鋅層組成。 本論文的第一部分是關於這種常規結構的參數優化。 經過優化,本實驗室實現了在小型組件(總面積60 平方釐米)上15.6%的最高轉換效率。
本論文的第二部分關於用化學水浴法生長緩衝層。 我們發展了一種新型生長制備,用於避免氣泡和孔洞在吸收層表面的形成。 表面形貌測試結果顯示,使用此種設備生長的緩衝層能均勻的覆蓋銅銦鎵硒吸收層的表面。 其它硫化鎘的生長參數也根據新設備的特點進行了優化。 優化結果顯示,在空間電荷區的復合對電池轉換效率影響較大,而這種復合損失可以經過調整緩衝層與吸收能之間能帶結構得到減少。 我們研究了另外一種用化學水浴法生長的緩衝層:硫化鋅。 硫化鋅是一種無毒的寬禁帶材料,在短波部分有較少的光吸收。因此,它是一種很好的硫化鎘替代物。 我們研究了在不同生長溫度下的生長動力學機制。 最優的生長溫度是95 攝氏度。 經過生長結束後的退火過程,硫化鋅的禁帶寬度由3.61eV 下降到3.2eV。 再經過在氧氣環境中的退火,禁帶寬度可由3.2eV 繼續下降到2.9eV。 在單結電池中,硫化鋅的最優厚度在43 納米到62 納米之間。 在此厚度範圍中,具有硫化鋅緩衝層的電池實現了相對於具有硫化鎘緩衝層的電池更高的轉換效率。硫化鋅電池實現了與硫化鎘電池相近的開路電壓。 此項改進主要是由於在高溫條件下生長的硫化鋅與銅銦鎵硒層形成了更合適的能帶結構。
本論文的第三部分是關於用共濺射的方法生長鋅鎂氧化物緩衝層。 實驗結果顯示,鋅鎂氧化物的晶體結構和禁帶寬度與鎂含量相關。 當鎂含量小於0.4 時,鋅鎂氧化物具有(002)從優方位的纖鋅礦結構。 晶體質量隨鎂含量的增加而降低,同時,鋅鎂氧化物的禁帶寬度隨鎂含量的增加線性增加。 對於濺射方法生長的緩衝層,吸收層的表面鈍化對提高轉化效率非常重要。
本論文的最後一部分是關於高阻窗口層的研究。 相比於由本征氧化鋅構成的高阻窗口層,由鋅鎂氧化物構成的高阻窗口層能使電池有更優的穩定性。對於單結電池,本層的最優厚度是50 納米。對於小型組件,最優厚度在100 納米左右。 關於鎂的最優組分,結果仍爭議,但可以確定的是由較高濺射功率(大於2.2 瓦每平方釐米)產生的濺射損傷是應當盡量避免的。關於光照產生的亞穩定性的研究表明,亞穩定性強度與濺射環境中的氧氣含量正相關。 相對於無氧氣摻雜的電池,通過將1%的氧氣摻入氬氣濺射環境中,電池效率提高了0.5 個百分點。
Cu(In,Ga)Se2 (CIGS)-based thin film solar cells have been regarded as a promising technology for cheap and environmentally friendly electricity generation. CIGS based solar cell has achieved 20.9% conversion effciency, while the offcial record for multicrystalline Silicon solar cell is 20.4%. A series of improvements have lead to this record for thin film based solar cell. An important improvement originated from the replacement of 1- to 2-um-thick doped (Cd,Zn)S layer by a thin, undoped CdS and a transparent conductive oxide(TCO).
Based on our techniques on growing high quality CIGS absorber layer, this work focuses on further optimization of buffer layer and high resistance window layer located between the CIGS absorber and the TCO window layer. The standard buffer structure includes a chemical-bath-deposited CdS layer and an intrinsic ZnO layer. The first part of this thesis is about optimization of this standard structure carried out in our laboratory. The best conversion effciency achieved on mini-module with total area of 60 cm² is 15.6 %.
The second part is about the fabrication of alternative buffer layers by chemical bath deposition. New deposition equipment has been invented to eliminate stationary bubbles and uncovered pinholes on absorber surface in the deposition of CBD CdS. Surface morphology studies shown that the buffer layer grown by this equipment has uniform coverage on the CIGS surface. Other deposition parameters in the chemical bath deposition of CdS buffer layer have been systematically studied employing this new equipment. Our results suggest that the detrimental effect of recombination in SCR region can be mitigated by proper band alignment in the buffer/absorber interface.
Another buffer layer grown by CBD method is ZnS. Because the wider bandgap and less light absorption in short wavelength range, ZnS is a good candidate to replace the toxic CdS buffer layer. The growth kinetics under different deposition temperature have been studied. The optimal temperature profile has been achieved by setting temperature at 95°C. The results of post annealing after deposition indicate that the bandgap energy of CBD ZnS decreases from 3.61 eV to 3.2 eV by annealing in vacuum. A further decrease from 3.2 eV to 2.9 eV could be caused by annealing with oxygen gas. The optimum thickness of ZnS used in single solar cells is between 43nm and 62nm. In this range, devices with CBD-ZnS buffer layer have achieved higher conversion effciency than CBD-CdS buffer layer solar cell. The open circuit voltage for ZnS-buffer devices has approached the value with CdS-buffer. The improvement is mainly due to proper band alignment of ZnS/CIGS interface achieved under high deposition temperature of CBD process.
The third part of this thesis is to study how to deposit (Zn,Mg)O buffer layers by co-sputtering method. It was found that the crystalline structure and optical bandgap of sputtered (Zn,Mg)O varies with Mg concentration. (Zn,Mg)O thin films with Mg concentration less than 0.4 have preferential orientation with a wurtzite phase (002). The crystal quality decreases with increasing Mg concentration and the band gap of the (Zn,Mg)O films has a linear relationship with the Mg concentration in this range. An interesting finding to emerge from this study is that oxygen passivation of absorber surface is critical to improve device performance with (Zn,Mg)O buffer layer deposited by sputtering method.
The last chapter assesses the effect of replacing high resistance window layer with (Zn,Mg)O in devices with CBD-ZnS buffer layer. Compared to devices with i-ZnO (high-resistance window) HRW layer, better device stability has been confirmed on solar cells with (Zn,Mg)O HRW layer. For single cells, the optimum thickness of HRW layer is about 50 nm, and the optimum thickness for mini-modules is around 100nm. Although no conclusion can be drawn with the optimum Mg concentration, the sputtering damage caused by sputtering power density higher than 2.2 W/cm² should be avoided. It was also shown that the metastability effect activated by illumination has positive correlation with the number of energetic oxygen ions in sputtering process. Compared to devices without oxygen doping, a higher effciency (increase of 0.5 % unit) has been achieved by the oxygen/argon doping ratio of 1 %.
Detailed summary in vernacular field only.
Detailed summary in vernacular field only.
Detailed summary in vernacular field only.
Detailed summary in vernacular field only.
Detailed summary in vernacular field only.
Zhu, Jiakuan = 基於銅銦鎵硒薄膜太陽能電池的緩衝層結構研究 / 朱家寬.
Thesis (Ph.D.) Chinese University of Hong Kong, 2014.
Includes bibliographical references (leaves 121-134).
Abstracts also in Chinese.
Zhu, Jiakuan = Ji yu tong yin jia xi bo mo tai yang neng dian chi de huan chong ceng jie gou yan jiu / Zhu Jiakuan.
Chetty, Raju. "Thermoelectric Propeties of Cu Based Chalcogenide Compounds." Thesis, 2014. http://hdl.handle.net/2005/2912.
Повний текст джерелаChen, Wei-Chao, and 陳韋兆. "Optoelectronic Devices Based on Earth Abundant Element (C, Cu, Zn, Sn, S, Se) by Solution and Vacuum Processes." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/07148918736038028015.
Повний текст джерела國立清華大學
工程與系統科學系
104
This dissertation presents investigations of the design and synthesis of optoelectronic materials with earth abundant element as well as novel experimental design methodologies. First, we developed three different processes to synthesize quaternary chalcogenide compound for solar cell application, including CZTS colloidal nanoparticles (NPs) by microwave assisted heating process, multi-step selenization process, and fast ramping annealing processes. In microwave heating process, we utilize oleylamine (OLA) and trioctylphosphine oxide (TOPO) as the reaction solvents. With appropriate ratio of two complementary solvents, this microwave heating method can shorten the reaction time from 200 min to 10 min with high quality of CZTS NPs. Our results proved that the crystalline CZTS NPs with appropriate stoichiometry and reasonable energy band gap (~1.5 eV) could be achieved. Meanwhile, we also proposed a multi-step selenization process for the Cu-Zn/Sn metallic stacked precursor to prepare Cu2ZnSnSe4 (CZTSe) absorber. Then the reaction in fixed Se vapour pressure in a series of increasing temperatures was studied. By precisely controlling the nucleation temperatures from 150 oC to 500 oC during 4-step selenization, the homogeneity and crystal quality of CZTSe can be achieved, and the binary phase can be totally ruled out. Finally, stoichiometry with less impurity CZTSe thin film formed at the optimum annealing conditions 500 oC for 10 min: lower or higher temperature lead to insufficient crystallization or undesirable phase segregation. A device efficiency of 5.8 % for the CZTSe solar cell have been achieved with an open circuit voltage of 370 mV, short circuit current of 31.99 mA/cm2, and a fill factor of 48.3%. In the third part, we synthesized high quality CZTSSe with fast ramping heating process with multi-stacking metallic layers. We demonstrated that precursor deposition numbers and inter-diffusion issue have a significant effect on the quality of thin film and device performance. The device prepared with conventional 3 layers stacked, with excessive Cu-rich secondary phase iv formation at the back contact region, results in poor performance of devices due to the poor interdiffusion of precursors. By using the modified 9 layer stacked precursor and fast ramping heating process the device efficiency can be improved from 4.8 to 7.7% with open circuit voltage enhancement from 0.44V to 0.5V due to a compact, smooth microstructure, and the suppression of Cu-rich bi-layer formation. Finally, we introduced a new method to fabricate SWNTs network films with high transparent, high electrical conductivity, and uniform in large (10 cm*10 cm) scale by ultrasonic spray. Due to van der Waals' force within individual SWNTs, dispersion of SWNTs in solvent is a challenging issue; therefore, in order to facilitate SWNTs dissolution in solvent, we functionalize surface of SNWTs with conductive polymer. As SWNTs dissolved, we centrifuged the solution, making the bundle SWNTs, amorphous carbon, and well-dispersed SWNTs to be separated. Finally, dispersive SWNTs solution is ultrasonically sprayed, permitting accurate quantity of SWNTs to be deposited onto substrate with large area uniformity, forming ultra-high smoother, high transmission, and high conductivity transparent conductive film. Hopefully, the optical and electrical transport properties of the SWNTs will be appropriate candidate for multiple-junction solar cells, thermo-photovoltaics, and other applications benefiting from a p-type transparent conductor application due to high near-infrared transmission.
Akhavan, Vahid Atar. "Photovoltaic devices based on Cu(In1-xGax)Se2 nanocrystal inks." Thesis, 2011. http://hdl.handle.net/2152/ETD-UT-2011-08-4285.
Повний текст джерелаtext
Ntholeng, Nthabiseng. "Synthesis and characterization of Cu-based telluride semiconductor materials for application in photovoltaic cells." Thesis, 2017. http://hdl.handle.net/10539/23532.
Повний текст джерелаThe colloidal method has extensively been used to synthesize ternary and quaternary copper sulfides and selenides. Although tellurides form part of the chalcogenides, little has been reported on them particularly the synthesis of these nanostructures. Achieving high-quality nanocrystals through colloidal synthesis requires thorough monitoring of parameters such as time, solvent, precursor as they affect nucleation and growth of the nanocrystals. Herein, we report on the colloidal synthesis of ternary CuInTe2 and quaternary CuIn1-xGaxTe2 nanostructured semiconductor materials. A typical synthesis of CuInTe2 entailed varying reaction temperature. At temperatures below 250 °C, no formation of CuInTe2 was seen. At 250 °C formation of CuInTe2 could be observed with the formation of binary impurities. A change in the sequence in which precursors were added at 250 °C yielded pure CuInTe2. Applying different surfactants aided in achieving differently structured morphologies of CuInTe2 nanocrystals. Morphology varied from rods, cubes, nanosheets etc. Different morphologies resulted in different optical properties with the high optical band gap of 1.22 eV measured for 1D rods. Different precursors were employed in the synthesis of quaternary CuIn1-xGaxTe2. Precursor 2 (entailed the use of Cu (acac)2, In (acac)3 and Ga(acac)3) yielded pure CuIn1-xGaxTe2 phase with no formation of impurities. Variation in reaction time influenced the optical properties of the quaternary CuIn1-xGaxTe2 with high band gap obtained at low reaction time (30 min). A change in Ga and In concentration resulted in reduced lattice parameters a and c with lowest values obtained with the highest Ga concentration. However, achieving the intended concentration proved challenging due to the loss of the material during synthesis. Increasing the Ga concentration resulted in a high optical band gap. Conducting the reaction with Hexadecylamine (HDA) resulted in a relatively high optical band though the formation of impurities was evident. The obtained band gap can be attributed to small sized particles as evident from TEM results. Heterojunction ZnO/CIT and ZnO/CIGT solar cell devices were fabricated through a simple solution approach. The performance of ZnO/CIGT device was superior to that of ZnO/CIT in which efficiency increased from 0.26-0.78%. In the ZnO/CIT device, high Voc of 880 mV was recorded while 573.66 mV was measured for ZnO/CIGT device. Chemical and thermal treatments were performed on the ZnO/CIGT devices. The efficiency increased from 0.78 1.25% when the device was chemically treated with a short-chain EDT ligand. A high conversion efficiency of 2.14% was recorded for devices annealed at 300 °C. High annealing temperatures resulted in poor device performance with the lowest efficiency of 0.089% obtained at annealing temperatures of 500 °C attributed to the leaching out of In and Ga into the ZnO layer.
LG2017
"Design of rapid thermal processing system for Cu(In,Ga)Se₂-based solar cells." 2009. http://library.cuhk.edu.hk/record=b5894108.
Повний текст джерелаThesis (M.Phil.)--Chinese University of Hong Kong, 2009.
Includes bibliographical references (p. 87-91).
Abstract also in Chinese.
Yang, Shihang = Tong yin jia xi tai yang neng dian chi zhong bai guang tui huo xi tong de she ji / Yang Shihang.
Chapter 1 --- Introduction to Photovoltaics --- p.1
Chapter 1.1 --- "Developments, markets and forecasts" --- p.1
Chapter 1.2 --- The physics of solar cells --- p.2
Chapter 1.2.1 --- Light Absorption --- p.2
Chapter 1.2.2 --- Charge Carrier Separation --- p.6
Chapter 1.2.3 --- Solar Cell I-V Characteristics --- p.7
Chapter 1.3 --- Classifications of Solar Cells --- p.10
Chapter 1.3.1 --- Crystalline silicon solar cell --- p.10
Chapter 1.3.2 --- Thin film solar cells --- p.12
Chapter 1.3.3 --- Organic and polymer solar cells --- p.12
Chapter 1.4 --- "Cu(In,Ga)Se2 Solar Cells" --- p.13
Chapter 1.4.1 --- State of the art --- p.13
Chapter 1.4.2 --- Material properties --- p.14
Chapter 1.4.3 --- Basic processing steps --- p.15
Chapter 2 --- Equipment design --- p.24
Chapter 2.1 --- System design concepts --- p.24
Chapter 2.2 --- Sample transfer chamber --- p.26
Chapter 2.3 --- Co-evaporation chamber --- p.28
Chapter 2.3.1 --- Load-lock chamber --- p.28
Chapter 2.3.2 --- Co-evaporation chamber --- p.31
Chapter 2.4 --- Sputtering chambers --- p.34
Chapter 2.4.1 --- Mo sputtering chamber --- p.34
Chapter 2.4.2 --- Three targets sputtering chamber --- p.36
Chapter 2.5 --- Other chambers --- p.38
Chapter 3 --- Design of Rapid Thermal Processing System --- p.42
Chapter 3.1 --- Introduction to RTP --- p.42
Chapter 3.1.1 --- History and current status of RTP --- p.42
Chapter 3.1.2 --- Advantages of RTP system compared to conventional furnaces --- p.45
Chapter 3.2 --- Computational simulation for RTP system design --- p.47
Chapter 3.2.1 --- Introduction to Ansys Fluent --- p.47
Chapter 3.2.2 --- Model setup steps --- p.54
Chapter 3.2.3 --- Physical principles --- p.57
Chapter 3.2.4 --- Models setup and comparisons --- p.62
Chapter 3.3 --- Rapid thermal processing system --- p.76
Chapter 3.3.1 --- Se deposition chamber --- p.76
Chapter 3.3.2 --- Quartz chamber --- p.78
Chapter 3.3.3 --- Lamp frame --- p.79
Chapter 4 --- Conclusions --- p.83
Chapter 4.1 --- RTP heater design --- p.83
Chapter 4.2 --- Future prospect --- p.83
Bibliography --- p.87
LIU, YING-CHEN, and 劉瀅溱. "Efficiency Enhancement of Ink-based Cu(In,Ga)Se2 Solar Cells via Indium Incorporation." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/72767116371821321664.
Повний текст джерелаTeixeira, Jennifer Cláudia Passos. "Optoelectronic study of Thin Film Solar Cells Based on Chalcogenide." Doctoral thesis, 2019. http://hdl.handle.net/10773/27750.
Повний текст джерелаNesta tese, foi estudado o papel dos defeitos nas propriedades optoelectrónicas de dois materiais com grande potencial para aplicações fotovoltaicas, Cu2ZnSnS4 (CZTS) e Cu(In, Ga)Se2 (CIGS). Ambos os materiais são fortemente dopados e compensados, sendo que as suas propriedades optoelectrónicas são governadas pelas suas estruturas de níveis eletrónicos complexas. No sentido de melhor compreender o impacto da estrutura eletrónica no desempenho das células solares, diferentes estudos foram realizados utilizando principalmente a técnica de fotoluminescência, complementada com análise morfológica, estrutural e elétrica. Para as células solares baseadas em CZTS, foram estudadas três séries de amostras para as quais o impacto i) do tempo da temperatura máxima de sulfurização, ii) do método de sulfurização, iii) do tratamento térmico após a deposição, foi avaliado nas propriedades optoelectrónicas da camada CZTS. Para o CIGS, três tópicos principais foram abordados, i) células solares com arquitetura convencional, ii) células solares para as quais se exploram novas arquiteturas, iii) influência dos defeitos no desempenho das células solares a partir da comparação de modelos teóricos com resultados experimentais. A influência das flutuações de potencial foi evidenciada, sendo que a luminescência obtida, tanto envolvendo o CZTS como o CIGS, foi completamente explicada a partir de modelos de recombinação que envolvem a presença destas flutuações. Os estudos óticos desenvolvidos no âmbito das células solares de CZTS revelaram um grande impacto de mecanismos não radiativos e de recombinação envolvendo defeitos profundos que se relacionam com um fraco desempenho dos dispositivos estudados. Para diferentes séries de amostras de células solares baseadas em CIGS foi obtida uma correlação entre a influência das flutuações de potencial e desempenho dos dispositivos estudados. Os resultados óticos obtidos para CIGS revelaram dois mecanismos principais de desexcitação dos canais radiativos envolvendo aglomerados de dadores pouco profundos e o defeito aceitador VCu. A partir das análises teórica e experimental de células solares de CIGS, obtevese uma maior correlação entre a influência das flutuações de potencial electroestáticas com as perdas de tensão de circuito aberto, do que aquela observada para as flutuações de hiato. Finalmente, foi demonstrada a influência das flutuações de potencial na tecnologia CIGS à temperatura ambiente. Nesta tese, foi mostrado que as propriedades optoelectrónicas do CZTS e CIGS são consistentes com a existência de flutuações de potencial, sendo que o seu impacto no desempenho das células solares é significativamente diferente em cada uma das tecnologias. Enquanto no CZTS os mecanismos de recombinação aparecem como um problema com um impacto no desempenho das células solares mais significativo que as flutuações de potencial, no CIGS uma correlação entre a influência das flutuações de potencial e o desempenho das células solares é notória.
The author acknowledge the financial support of the project UID/CTM/50025/2019, and IF/00133/2015/CP1325/CT0001 from the FCT.
Programa Doutoral em Física