Статті в журналах з теми "Zincblend"
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Yasuda, Hidehiro, Kimihisa Matsumoto, Tatsuya Furukawa, Masaki Imamura, Noriko Nitta, and Hirotaro Mori. "Structural Stabilities in GaAs Nanocrystals Grown on Si (111) Surface." Materials Science Forum 654-656 (June 2010): 1772–75. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.1772.
Повний текст джерелаMousavi, S. Javad. "The effect of etchants on surface of CdTe single crystal." JOURNAL OF ADVANCES IN PHYSICS 12, no. 1 (July 30, 2016): 4145–47. http://dx.doi.org/10.24297/jap.v12i1.166.
Повний текст джерелаMahmood, A., and L. Enrique Sansores. "Band structure and bulk modulus calculations of germanium carbide." Journal of Materials Research 20, no. 5 (May 2005): 1101–6. http://dx.doi.org/10.1557/jmr.2005.0172.
Повний текст джерелаZhao, Q. H., J. D. Parsons, H. S. Chen, A. K. Chaddha, J. Wu, G. B. Kruaval, and D. Downham. "Single crystal titanium carbide, epitaxially grown on zincblend and wurtzite structures of silicon carbide." Materials Research Bulletin 30, no. 6 (June 1995): 761–69. http://dx.doi.org/10.1016/0025-5408(95)00056-9.
Повний текст джерелаGupta, Monika, Jaya Shrivastava, Vidhika Sharma, Anjana Solanki, Ananad Pal Singh, V. R. Satsangi, S. Dass, and Rohit Shrivastav. "Enhanced Photoelectrochemical Activity of 120 MeV Ag9+ Irradiated Nanostructured Thin Films of ZnO for Solar-Hydrogen Generation via Splitting of Water." Advanced Materials Research 67 (April 2009): 95–102. http://dx.doi.org/10.4028/www.scientific.net/amr.67.95.
Повний текст джерелаBhattacharya, P., T. K. Sharma, S. Singh, A. Ingale, and L. M. Kukreja. "Observation of zincblend phase in InN thin films grown on sapphire by nitrogen plasma-assisted pulsed laser deposition." Journal of Crystal Growth 236, no. 1-3 (March 2002): 5–9. http://dx.doi.org/10.1016/s0022-0248(01)02083-8.
Повний текст джерелаEdossa, Teshome Gerbaba, and Menberu Woldemariam. "Electronic, structural and optical properties of zincblend and wurtizite cadmium selenide (CdSe) using density functional theory and hubbard correction." Physics and Chemistry of Solid State 22, no. 1 (January 25, 2021): 16–23. http://dx.doi.org/10.15330/pcss.22.1.16-23.
Повний текст джерелаEspitia R., Miguel Jose, John Hernan Diaz Forero, and Octavio Jose Salcedo Parra. "Computational calculation of the relative phase of the MnN compound." International Journal of Mathematical Analysis 11, no. 22 (2017): 1081–88. http://dx.doi.org/10.12988/ijma.2017.711144.
Повний текст джерелаSink, Joseph, and Craig Pryor. "Empirical tight-binding parameters for wurtzite group III–V(non-nitride) and IV materials." AIP Advances 13, no. 2 (February 1, 2023): 025354. http://dx.doi.org/10.1063/5.0129007.
Повний текст джерелаFarahmand, Maziar, and Kevin F. Brennan. "Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 633–39. http://dx.doi.org/10.1557/s1092578300004865.
Повний текст джерелаHernández-Cocoletzi, Heribert, Gregorio H. Cocoletzi, J. F. Rivas-Silva, A. Flores, and Noboru Takeuchi. "Density Functional Study of the Structural Properties of Copper Iodide: LDA vs GGA Calculations." Journal of Nano Research 5 (February 2009): 25–30. http://dx.doi.org/10.4028/www.scientific.net/jnanor.5.25.
Повний текст джерелаAHMED, B., and B. I. SHARMA. "STRUCTURAL AND ELECTRONIC PROPERTIES OF AlN IN ROCKSALT, ZINC BLENDE AND WURTZITE PHASE: A DFT STUDY." Digest Journal of Nanomaterials and Biostructures 16, no. 1 (January 2021): 125–33. http://dx.doi.org/10.15251/djnb.2021.161.125.
Повний текст джерелаFong, C. Y., M. C. Qian, Kai Liu, L. H. Yang, and J. E. Pask. "Design of Spintronic Materials with Simple Structures." Journal of Nanoscience and Nanotechnology 8, no. 7 (July 1, 2008): 3652–60. http://dx.doi.org/10.1166/jnn.2008.18331.
Повний текст джерелаSaleem, Samra, Ammara Maryam, Kaneez Fatima, Hadia Noor, Fatima Javed, and Muhammad Asghar. "Phase Control Growth of InAs Nanowires by Using Bi Surfactant." Coatings 12, no. 2 (February 15, 2022): 250. http://dx.doi.org/10.3390/coatings12020250.
Повний текст джерелаLiang, Xiao Lu, and Xian Hua Wei. "Synthesis and Characterization of Cu2FeSnS4 Semiconductor Nanocrystals with Zincblende Structure." Advanced Materials Research 512-515 (May 2012): 2019–22. http://dx.doi.org/10.4028/www.scientific.net/amr.512-515.2019.
Повний текст джерелаBiermanns, Andreas, Steffen Breuer, Anton Davydok, Lutz Geelhaar, and Ullrich Pietsch. "Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single-nanowire X-ray diffraction." Journal of Applied Crystallography 45, no. 2 (March 15, 2012): 239–44. http://dx.doi.org/10.1107/s0021889812003007.
Повний текст джерелаJHA, PRAFULLA K., SANJAY D. GUPTA, SANJEEV K. GUPTA, and DAVOR KIRIN. "STRUCTURAL AND ELECTRONIC PROPERTIES AND PHONONS OF PLATINUM NITRIDES BY DENSITY FUNCTIONAL THEORY." International Journal of Modern Physics B 25, no. 11 (April 30, 2011): 1543–51. http://dx.doi.org/10.1142/s0217979211100382.
Повний текст джерелаGundimeda, Abhiram, Martin Frentrup, Simon M. Fairclough, Menno J. Kappers, David J. Wallis, and Rachel A. Oliver. "Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1−xN nucleation layers." Journal of Applied Physics 131, no. 11 (March 21, 2022): 115703. http://dx.doi.org/10.1063/5.0077186.
Повний текст джерелаLiang, Xiaolu, Xianhua Wei, and Daocheng Pan. "Dilute Magnetic SemiconductorCu2FeSnS4Nanocrystals with a Novel Zincblende Structure." Journal of Nanomaterials 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/708648.
Повний текст джерелаARABSHAHI, H. "COMPARISON OF HIGH FIELD ELECTRON TRANSPORT PROPERTIES IN WURTZITE AND ZINCBLENDE PHASE GaN AT ROOM TEMPERATURE." Modern Physics Letters B 21, no. 04 (February 10, 2007): 199–206. http://dx.doi.org/10.1142/s0217984907012669.
Повний текст джерелаLee, Sanghwa, Yuri Sohn, Chinkyo Kim, Dong Ryeol Lee, and Hyun-Hwi Lee. "Nanostructural analysis of GaN tripods and hexapods grown onc-plane sapphire." Journal of Applied Crystallography 43, no. 6 (October 13, 2010): 1300–1304. http://dx.doi.org/10.1107/s0021889810036472.
Повний текст джерелаKim, Young-Geun, Ho-Jun Song, Seok-Kyun Oh, Wha-Tek Kim, Kwang-Ho Park, Duck-Tae Kim, Moon-Seog Jin, Chang-Dae Kim, and Chang-Sun Yoon. "Photoluminescence Spectral Lines Identification in Ho3+-, Er3+-, and Tm3+-doped MgxZn1–xSe Single Crystals." Journal of Materials Research 14, no. 4 (April 1999): 1227–34. http://dx.doi.org/10.1557/jmr.1999.0167.
Повний текст джерелаHIRAI, T., K. EDAMATSU, T. ITOH, Y. HARADA, and S. HASHIMOTO. "EXCITONS IN COLLOIDAL CuI PARTICLES DISPERSED IN A KI CRYSTAL." International Journal of Modern Physics B 15, no. 28n30 (December 10, 2001): 3789–92. http://dx.doi.org/10.1142/s0217979201008676.
Повний текст джерелаBöttcher, Rolf, Michael Lorenz, Andreas Pöppl, Daniel Spemann, and Marius Grundmann. "Local zincblende coordination in heteroepitaxial wurtzite Zn1−xMgxO:Mn thin films with 0.01 ≤ x ≤ 0.04 identified by electron paramagnetic resonance." Journal of Materials Chemistry C 3, no. 45 (2015): 11918–29. http://dx.doi.org/10.1039/c5tc02720a.
Повний текст джерелаLiu, Maochang, Bin Wang, Yiqun Zheng, Fei Xue, Yubin Chen, and Liejin Guo. "Transformation of zincblende nanoparticles into wurtzite microrods by a dissolution–regrowth process: an intergrowth homojunction with enhanced photocatalytic activity." Catalysis Science & Technology 6, no. 10 (2016): 3371–77. http://dx.doi.org/10.1039/c6cy00298f.
Повний текст джерелаWolverson, D., L. C. Smith, C. Bradford, B. C. Cavenett, and K. A. Prior. "Micro-Raman Studies of Zincblende MgS." Journal of the Korean Physical Society 53, no. 9(5) (November 15, 2008): 2779–81. http://dx.doi.org/10.3938/jkps.53.2779.
Повний текст джерелаBertrand, Guillaume H. V., Anatolii Polovitsyn, Sotirios Christodoulou, Ali Hossain Khan, and Iwan Moreels. "Shape control of zincblende CdSe nanoplatelets." Chemical Communications 52, no. 80 (2016): 11975–78. http://dx.doi.org/10.1039/c6cc05705e.
Повний текст джерелаKuo, Yen-Kuang, Han-Yi Chu, Sheng-Horng Yen, Bo-Ting Liou, and Mei-Ling Chen. "Bowing parameter of zincblende InxGa1−xN." Optics Communications 280, no. 1 (December 2007): 153–56. http://dx.doi.org/10.1016/j.optcom.2007.07.058.
Повний текст джерелаErdakos, Garnet B., and Shang-Fen Ren. "Poisson's ratios in diamond/zincblende crystals." Journal of Physics and Chemistry of Solids 59, no. 1 (January 1998): 21–26. http://dx.doi.org/10.1016/s0022-3697(97)00120-0.
Повний текст джерелаSchneider, J. W., Hp Baumeler, H. Keller, R. F. Kiefl, W. Kündig, W. Odermatt, B. D. Patterson, et al. "Muonium states in zincblende-structured compounds." Hyperfine Interactions 32, no. 1-4 (December 1986): 607–12. http://dx.doi.org/10.1007/bf02394963.
Повний текст джерелаOHKE, Shigeaki, Yoshio CHO, and Takahiro OKABE. "Electro-optic effect in zincblende crystals." Review of Laser Engineering 15, no. 1 (1987): 2–11. http://dx.doi.org/10.2184/lsj.15.2.
Повний текст джерелаRodrigues, C. G., J. R. L. Fernandez, J. R. Leite, V. A. Chitta, V. N. Freire, A. R. Vasconcellos, and R. Luzzi. "Hole mobility in zincblende c–GaN." Journal of Applied Physics 95, no. 9 (May 2004): 4914–17. http://dx.doi.org/10.1063/1.1690865.
Повний текст джерелаHan, J., S. M. Durbin, R. L. Gunshor, M. Kobayashi, D. R. Menke, N. Pelekanos, M. Hagerott, A. V. Nurmikko, Y. Nakamura, and N. Otsuka. "Quantum wells with zincblende MnTe barriers." Journal of Crystal Growth 111, no. 1-4 (May 1991): 767–71. http://dx.doi.org/10.1016/0022-0248(91)91078-o.
Повний текст джерелаKonczewicz, L., P. Bigenwald, T. Cloitre, M. Chibane, R. Ricou, P. Testud, O. Briot, and R. L. Aulombard. "MOVPE growth of zincblende magnesium sulphide." Journal of Crystal Growth 159, no. 1-4 (February 1996): 117–20. http://dx.doi.org/10.1016/0022-0248(95)00832-2.
Повний текст джерелаMaliakkal, Carina B., Daniel Jacobsson, Marcus Tornberg, and Kimberly A. Dick. "Post-nucleation evolution of the liquid–solid interface in nanowire growth." Nanotechnology 33, no. 10 (December 17, 2021): 105607. http://dx.doi.org/10.1088/1361-6528/ac3e8d.
Повний текст джерелаARABSHAHI, H., and A. A. MOWLAVI. "LOW-FIELD ELECTRON TRANSPORT PROPERTIES IN ZINCBLENDE AND WURTZITE GaN STRUCTURES USING AN ITERATION MODEL FOR SOLVING BOLTZMANN EQUATION." Modern Physics Letters B 23, no. 10 (April 20, 2009): 1359–66. http://dx.doi.org/10.1142/s021798490901948x.
Повний текст джерелаIBRIR, Miloud. "Elastic, mechanical and thermodynamic properties of zinc blende III-X (X= As, Sb): ab-initio calculations." International Journal of Energetica 4, no. 1 (June 30, 2019): 23. http://dx.doi.org/10.47238/ijeca.v4i1.90.
Повний текст джерелаDaoud, Salah, Abdelhalim Bencheikh, and Laarbi Belagraa. "Quasi-linear correlation between high-frequency and static die-lectric constants in II-VI and III-V semiconductors." International Journal of Physical Research 5, no. 1 (December 15, 2016): 4. http://dx.doi.org/10.14419/ijpr.v5i1.6961.
Повний текст джерелаXU WEN-LAN and ZHENG ZHAO-BO. "VIBRATION PROPERTIES OF IMPURITIES IN ZINCBLENDE STRUCTURE." Acta Physica Sinica 38, no. 2 (1989): 290. http://dx.doi.org/10.7498/aps.38.290.
Повний текст джерелаGhong, T. H., Y. W. Jung, J. J. Yoon, Y. D. Kim, H. J. Kim, and Y. C. Chang. "Dielectric Function Study on Zincblende CdSe Film." Journal of the Korean Physical Society 53, no. 1 (July 15, 2008): 367–70. http://dx.doi.org/10.3938/jkps.53.367.
Повний текст джерелаFornasini, P., R. Grisenti, and N. Abd el All. "EXAFS parameters and VDOS in zincblende structures." Journal of Physics: Conference Series 430 (April 22, 2013): 012004. http://dx.doi.org/10.1088/1742-6596/430/1/012004.
Повний текст джерелаUno, Ryosei, Haruo Ozawa, Jun Ishigaki, and Ken Yukino. "Electron Distribution in Some Zincblende-Type Crystals." Zeitschrift für Naturforschung A 48, no. 1-2 (February 1, 1993): 38–40. http://dx.doi.org/10.1515/zna-1993-1-210.
Повний текст джерелаPeng, Chen, and Takamura K. "Magnetic and electrical properties of zincblende CrAs." Chinese Physics B 17, no. 6 (June 2008): 2204–7. http://dx.doi.org/10.1088/1674-1056/17/6/044.
Повний текст джерелаAhmadian, F. "Half-metallic ferromagnetism in the zincblende TiTe." Solid State Communications 151, no. 24 (December 2011): 1927–31. http://dx.doi.org/10.1016/j.ssc.2011.09.018.
Повний текст джерелаCaetano, E. W. S., R. N. Costa Filho, V. N. Freire, and J. A. P. da Costa. "Velocity overshoot in zincblende and wurtzite GaN." Solid State Communications 110, no. 9 (May 1999): 469–72. http://dx.doi.org/10.1016/s0038-1098(99)00114-3.
Повний текст джерелаZhang, Li, Su You, Ming Zuo, and Qing Yang. "Solution Synthesis of Nonequilibrium Zincblende MnS Nanowires." Inorganic Chemistry 56, no. 14 (June 29, 2017): 7679–86. http://dx.doi.org/10.1021/acs.inorgchem.7b00247.
Повний текст джерелаGoldammer, W., J. Backhaus, and W. Ludwig. "Surface phonons and reconstruction for zincblende structures." Physica Scripta 38, no. 2 (August 1, 1988): 155–58. http://dx.doi.org/10.1088/0031-8949/38/2/006.
Повний текст джерелаLin, M. E., B. N. Sverdlov, S. Strite, H. Morkoç, and A. E. Drakin. "Refractive indices of wurtzite and zincblende GaN." Electronics Letters 29, no. 20 (1993): 1759. http://dx.doi.org/10.1049/el:19931172.
Повний текст джерелаSoma, T., S. Tahata, and H. Matsuo Kagaya. "Interstitial Atom in the Zincblende-Type Lattice." physica status solidi (b) 157, no. 2 (February 1, 1990): 509–18. http://dx.doi.org/10.1002/pssb.2221570203.
Повний текст джерелаWolverson, D., C. Bradford, K. A. Prior, and B. C. Cavenett. "UV Raman Microscopy of Zincblende Magnesium Sulphide." physica status solidi (b) 229, no. 1 (January 2002): 93–96. http://dx.doi.org/10.1002/1521-3951(200201)229:1<93::aid-pssb93>3.0.co;2-2.
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