Добірка наукової літератури з теми "Zincblend"
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Статті в журналах з теми "Zincblend"
Yasuda, Hidehiro, Kimihisa Matsumoto, Tatsuya Furukawa, Masaki Imamura, Noriko Nitta, and Hirotaro Mori. "Structural Stabilities in GaAs Nanocrystals Grown on Si (111) Surface." Materials Science Forum 654-656 (June 2010): 1772–75. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.1772.
Повний текст джерелаMousavi, S. Javad. "The effect of etchants on surface of CdTe single crystal." JOURNAL OF ADVANCES IN PHYSICS 12, no. 1 (July 30, 2016): 4145–47. http://dx.doi.org/10.24297/jap.v12i1.166.
Повний текст джерелаMahmood, A., and L. Enrique Sansores. "Band structure and bulk modulus calculations of germanium carbide." Journal of Materials Research 20, no. 5 (May 2005): 1101–6. http://dx.doi.org/10.1557/jmr.2005.0172.
Повний текст джерелаZhao, Q. H., J. D. Parsons, H. S. Chen, A. K. Chaddha, J. Wu, G. B. Kruaval, and D. Downham. "Single crystal titanium carbide, epitaxially grown on zincblend and wurtzite structures of silicon carbide." Materials Research Bulletin 30, no. 6 (June 1995): 761–69. http://dx.doi.org/10.1016/0025-5408(95)00056-9.
Повний текст джерелаGupta, Monika, Jaya Shrivastava, Vidhika Sharma, Anjana Solanki, Ananad Pal Singh, V. R. Satsangi, S. Dass, and Rohit Shrivastav. "Enhanced Photoelectrochemical Activity of 120 MeV Ag9+ Irradiated Nanostructured Thin Films of ZnO for Solar-Hydrogen Generation via Splitting of Water." Advanced Materials Research 67 (April 2009): 95–102. http://dx.doi.org/10.4028/www.scientific.net/amr.67.95.
Повний текст джерелаBhattacharya, P., T. K. Sharma, S. Singh, A. Ingale, and L. M. Kukreja. "Observation of zincblend phase in InN thin films grown on sapphire by nitrogen plasma-assisted pulsed laser deposition." Journal of Crystal Growth 236, no. 1-3 (March 2002): 5–9. http://dx.doi.org/10.1016/s0022-0248(01)02083-8.
Повний текст джерелаEdossa, Teshome Gerbaba, and Menberu Woldemariam. "Electronic, structural and optical properties of zincblend and wurtizite cadmium selenide (CdSe) using density functional theory and hubbard correction." Physics and Chemistry of Solid State 22, no. 1 (January 25, 2021): 16–23. http://dx.doi.org/10.15330/pcss.22.1.16-23.
Повний текст джерелаEspitia R., Miguel Jose, John Hernan Diaz Forero, and Octavio Jose Salcedo Parra. "Computational calculation of the relative phase of the MnN compound." International Journal of Mathematical Analysis 11, no. 22 (2017): 1081–88. http://dx.doi.org/10.12988/ijma.2017.711144.
Повний текст джерелаSink, Joseph, and Craig Pryor. "Empirical tight-binding parameters for wurtzite group III–V(non-nitride) and IV materials." AIP Advances 13, no. 2 (February 1, 2023): 025354. http://dx.doi.org/10.1063/5.0129007.
Повний текст джерелаFarahmand, Maziar, and Kevin F. Brennan. "Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 633–39. http://dx.doi.org/10.1557/s1092578300004865.
Повний текст джерелаДисертації з теми "Zincblend"
Chitta, Valmir Antonio. "Propriedades eletrônicas de hetero-estruturas de semicondutores zincblende." Universidade de São Paulo, 1987. http://www.teses.usp.br/teses/disponiveis/54/54131/tde-22052009-131752/.
Повний текст джерелаA Kane-like (6x6) KP Hamiltonian is used to study the subband structure and Landau levels for group III-V and group II-VI zincblende semiconductor heterostructures. The effects of conduction-valence band coupling, valence band states mixing, nonparabolicity of the levels, the full degeneracy of the levels, warping and effective masses discontinuities at the heterointerfaces are taken into account. It is shown that the interaction between conduction-valence bands cannot be neglected, even so the semicondutctor have wide gap, as claimed in previous work in the literature. GaAs-Ga(Al)As quantum well was used as a model for a systematic study of the effects of each effective KP parameters. Then, it was applied to the study the subband structure of semi-magnetic semiconductor system (a quantum well of CdTe-Cd(Mn)Te.
Mosqueiro, Thiago Schiavo. "Transições ópticas em heteroestruturas semicondutoras Zincblende com duas sub-bandas." Universidade de São Paulo, 2011. http://www.teses.usp.br/teses/disponiveis/76/76131/tde-20042011-154055/.
Повний текст джерелаIn this work, I present an alternative derivation of the conduction band effective hamiltonian for Zincblende semiconductor heterostructures. Starting from the 8×8 Kane model and envelope function approximation, this effective hamiltonian was obtained by means of a linearization in the eigenenergy-dependent denominators present the conduction band equation, under the hypothesis that the energy gap is bigger than any other energy difference in the system (true for mostly every Zincblende semiconductor bulk or heterostructure). Based on a previous procedure1,3, I have developed a more general procedure that implements sistematicaly (i) this linearization and (ii) renormalizes the conduction band spinor using the valence bands, both (i) and (ii) up to second order in the inverse of the energy gap. This procedure is identical to the expansion in power series of the inverse of the light speed used to derive non-relativistic approximations of the Dirac equation. One advantage of this procedure is the generality of the potentials adopted in our derivation: the same results hold for quantum wells, wires and dots. I show the consequences of each term of this hamiltonian for the electron eigenstates in retangular wells, including novel spin-independent terms (Darwin and linear momentumelectric field couplings). These resulties agree with previous works4. In order to study conduction band optical transitions, I show that the minimal substitution can be performed directly in the Kane hamiltonian if the external fields vary slowly (at least, as slowly as the envelope functions). Repeating the linearization of the energy denominators, I derive a new effective hamiltonian, up to second order in the inverse of the energy gap, with electron-photons couplings. One of these couplings, induced exclusively by the valence bands, gives rise to optical transitions mediated by the electron spin. This spin-assisted coupling enable optically-induced spin flipps in conduction subband transitions, which can be useful in the construction of spintronic devices. Finaly, the spin-assisted transitions rates show saturation and lines of maxima and minima in the reciprocal lattice. I hope that these optical couplings can be of any help in the observation of interesting effects induced by the intra and intersubband spin-orbit coupling.
Gutiérrez, Valdés Iasser. "Cálculo y análisis de la estructura de mínima energía del seleniuro de cadmio en su fase zincblende y con dopaje de níquel." Tesis de Licenciatura, Universidad Autónoma del Estado de México, 2017. http://hdl.handle.net/20.500.11799/80128.
Повний текст джерелаCONACyT proyecto \Estudio de Propiedades Eléctricas y Magnéticas de Nanocompuestos
Bergslid, Tore Sivertsen. "Implementing a Full-Band Monte Carlo Model for Zincblende Structure Semiconductors." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for fysikk, 2013. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-23254.
Повний текст джерелаAbd, El All Naglaa Fathy. "Negative Thermal Expansion in Zincblende Structure: an EXAFS study of CdTe." Doctoral thesis, Università degli studi di Trento, 2010. https://hdl.handle.net/11572/369152.
Повний текст джерелаNgo, Tuan Nghia, and Irina Zubritskaya. "Electrical and Optical Characterization of InP Nanowire Ensemble Photodetectors." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-17457.
Повний текст джерелаMjåland, Terje Sund. "Micro-photoluminescence spectroscopy of self-catalyzed zincblende GaAs nanowires grown by molecular beam epitaxy." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for elektronikk og telekommunikasjon, 2012. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-19066.
Повний текст джерелаBradford, Christine Bradford. "MBE growth and characterisation of Zincblende MgS-based II-VI semiconductor material and devices." Thesis, Heriot-Watt University, 2002. http://hdl.handle.net/10399/407.
Повний текст джерелаMüllhäuser, Jochen R. "Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy." [S.l. : s.n.], 1999. http://deposit.ddb.de/cgi-bin/dokserv?idn=958732159.
Повний текст джерелаStark, Thomas S. "Picosecond Dynamics of Free-Carrier Populations, Space-Charge Fields, and Photorefractive Nonlinearities in Zincblende Semiconductors." Thesis, University of North Texas, 1999. https://digital.library.unt.edu/ark:/67531/metadc2202/.
Повний текст джерелаКниги з теми "Zincblend"
Rosenberger, F. Growth of zinc selenide single crystals by physical vapor transport in microgravity: Semi-annual progress report, NASA grant NAG8-767, period of performance, 4/1/93 through 10/1/93. Huntsville, Ala: Center for Microgravity and Materials Research, University of Alabama in Huntsville, 1993.
Знайти повний текст джерелаRosenberger, F. Growth of zinc selenide single crystals by physical vapor transport in microgravity: Final report, NASA grant NAG8-767, period of performance, 4/1/89 - 8/31/95. Huntsville, Ala: Center for Microgravity and Materials Research, University of Alabama in Huntsville, 1995.
Знайти повний текст джерелаЧастини книг з теми "Zincblend"
Schubert, Mathias. "Zincblende-Structure Materials (III–V)." In Springer Tracts in Modern Physics, 81–107. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/978-3-540-44701-6_6.
Повний текст джерелаRössler, U. "HgSe, zincblende modification: energy bands." In New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 88–89. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_63.
Повний текст джерелаda Silva, E. C. F. "AlSb, zincblende modification: dielectric constant." In Landolt-Börnstein - Group III Condensed Matter, 37–38. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-23415-6_27.
Повний текст джерелаLiu, Pu, Jun Xiao, and Guowei Yang. "Silicon nanoparticles with zincblende structure." In Silicon Nanomaterials Sourcebook, 247–70. Boca Raton, FL: CRC Press, Taylor & Francis Group, [2017] | Series: Series in materials science and engineering: CRC Press, 2017. http://dx.doi.org/10.4324/9781315153544-13.
Повний текст джерелаRössler, U. "β-HgS, zincblende modification: energy bands." In New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 83–84. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_59.
Повний текст джерелаRössler, U. "β-HgS, zincblende modification: energy gap." In New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 85. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_60.
Повний текст джерелаda Silva, E. C. F. "GaSb, zincblende modification: effective mass parameters." In Landolt-Börnstein - Group III Condensed Matter, 187. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-23415-6_108.
Повний текст джерелаda Silva, E. C. F. "AlP, zincblende modifiction: interband transition energies." In Landolt-Börnstein - Group III Condensed Matter, 18. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-23415-6_12.
Повний текст джерелаda Silva, E. C. F. "AlP, zincblende modification: effective mass parameters." In Landolt-Börnstein - Group III Condensed Matter, 20. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-23415-6_14.
Повний текст джерелаda Silva, E. C. F. "InP, zincblende modification: effective mass parameters." In Landolt-Börnstein - Group III Condensed Matter, 234. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-23415-6_142.
Повний текст джерелаТези доповідей конференцій з теми "Zincblend"
Sadeghi, A. M., and H. Arabshahi. "Influence of Plasmon Scattering on Low Field Electron Mobility in Wurtzite and Zincblend GaN." In 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. IEEE, 2006. http://dx.doi.org/10.1109/commad.2006.4429902.
Повний текст джерелаRao, Mala N. "Vibrational properties of zincblende structured ternary alloys." In SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4790892.
Повний текст джерелаKuo, Paulina S., K. L. Vodopyanov, and M. M. Fejer. "Polarization-Diverse Parametric Processes in Zincblende Crystals." In Nonlinear Optics: Materials, Fundamentals and Applications. Washington, D.C.: OSA, 2009. http://dx.doi.org/10.1364/nlo.2009.pdpb4.
Повний текст джерелаBoochani, Arash, Mohammad Reza Abolhasani, and Farzad Ahmadian. "Half-Metallicity at the Zincblende VSb(001) Surfaces." In 2010 Second International Conference on Computer Research and Development. IEEE, 2010. http://dx.doi.org/10.1109/iccrd.2010.113.
Повний текст джерелаChen, Limei, Peter J. Klar, Wolfram Heimbrodt, Lorraine David, Christine Bradford, and Kevin A. Prior. "Optical Spectroscopy On Metastable Zincblende MnS/ZnSe Heterostructures." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730318.
Повний текст джерелаBallato, A., T. Lukaszek, M. Mizan, and J. Kosinski. "Lateral- and Thickness-Field Coupling in Zincblende Structures." In 41st Annual Symposium on Frequency Control. IEEE, 1987. http://dx.doi.org/10.1109/freq.1987.201041.
Повний текст джерелаObinata, T., H. Kumano, K. Uesugi, J. Nakahara, and I. Suemune. "First Epitaxial Growth of Zincblende ZnSe/MgS Superlattices." In 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.lb-l15.
Повний текст джерелаTse, G., J. Pal, R. Garg, V. Haxha, and M. A. Migliorato. "Non linear piezoelectricity in zincblende GaAs and InAs semiconductors." In 2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, 2012. http://dx.doi.org/10.1109/nusod.2012.6316527.
Повний текст джерелаMoss, D. J., John E. Sipe та H. M. Van Driel. "Improvement in the theory of χ2 for zincblende crystals". У OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/oam.1987.tud4.
Повний текст джерелаAghaeipour, Mahtab, Nicklas Anttu, Gustav Nylund, Lars Samuelson, Sebastian Lehmann, and Mats-Erik Pistol. "The optical absorption in zincblende and wurtzite GaP nanowire polytypes." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/cleo_si.2015.sth3m.7.
Повний текст джерела