Добірка наукової літератури з теми "Wurtzite crystal"
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Статті в журналах з теми "Wurtzite crystal"
Hostettler, M., and H. D. Flack. "Anti-wurtzite reoriented." Acta Crystallographica Section B Structural Science 59, no. 4 (July 25, 2003): 537–38. http://dx.doi.org/10.1107/s0108768103009467.
Повний текст джерелаLiu, Wu, Qiu Li, Gang Jin, and Wei Qiu. "Measurement of the Euler Angles of Wurtzitic ZnO by Raman Spectroscopy." Journal of Spectroscopy 2017 (2017): 1–9. http://dx.doi.org/10.1155/2017/6430540.
Повний текст джерелаSink, Joseph, and Craig Pryor. "Empirical tight-binding parameters for wurtzite group III–V(non-nitride) and IV materials." AIP Advances 13, no. 2 (February 1, 2023): 025354. http://dx.doi.org/10.1063/5.0129007.
Повний текст джерелаSana, Prabha, Shammi Verma, and M. M. Malik. "Optical and Structural Investigations of Manganese Doped ZnS/SiO2 Core-Shell Nanostructure." International Journal of Nanoscience 14, no. 03 (May 19, 2015): 1550006. http://dx.doi.org/10.1142/s0219581x15500064.
Повний текст джерелаSaleem, Samra, Ammara Maryam, Kaneez Fatima, Hadia Noor, Fatima Javed, and Muhammad Asghar. "Phase Control Growth of InAs Nanowires by Using Bi Surfactant." Coatings 12, no. 2 (February 15, 2022): 250. http://dx.doi.org/10.3390/coatings12020250.
Повний текст джерелаRoss, Jennifer, Mike Rubin, and T. K. Gustafson. "Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition." Journal of Materials Research 8, no. 10 (October 1993): 2613–16. http://dx.doi.org/10.1557/jmr.1993.2613.
Повний текст джерелаMa, Yan, Jikang Jian, Rong Wu, Yanfei Sun, and Jin Li. "Preparation of CdTe nanostructures with different crystal structures and morphologies." Powder Diffraction 26, S1 (December 2011): S47—S50. http://dx.doi.org/10.1154/1.3662023.
Повний текст джерелаVolcheck, V. S., M. S. Baranava, and V. R. Stempitsky. "Thermal conductivity of wurtzite gallium nitride." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 67, no. 3 (October 8, 2022): 285–97. http://dx.doi.org/10.29235/1561-8358-2022-67-3-285-297.
Повний текст джерелаPavlov, Alexander, Alexey Mozharov, Yury Berdnikov, Camille Barbier, Jean-Christophe Harmand, Maria Tchernycheva, Roman Polozkov, and Ivan Mukhin. "DFT analysis of crystal polarity on graphene surface." Journal of Physics: Conference Series 2015, no. 1 (November 1, 2021): 012105. http://dx.doi.org/10.1088/1742-6596/2015/1/012105.
Повний текст джерелаChen, Chunlin, Deqiang Yin, Takeharu Kato, Takashi Taniguchi, Kenji Watanabe, Xiuliang Ma, Hengqiang Ye, and Yuichi Ikuhara. "Stabilizing the metastable superhard material wurtzite boron nitride by three-dimensional networks of planar defects." Proceedings of the National Academy of Sciences 116, no. 23 (May 17, 2019): 11181–86. http://dx.doi.org/10.1073/pnas.1902820116.
Повний текст джерелаДисертації з теми "Wurtzite crystal"
Biermann, Amelie Laura [Verfasser], Axel [Akademischer Betreuer] Hoffmann, Christian [Akademischer Betreuer] Thomsen, Axel [Gutachter] Hoffmann, and Anna [Gutachter] Rodina. "Phonons and excitons in colloidal CdSe/CdS quantum dots with wurtzite and zincblende crystal structure / Amelie Laura Biermann ; Gutachter: Axel Hoffmann, Anna Rodina ; Axel Hoffmann, Christian Thomsen." Berlin : Technische Universität Berlin, 2018. http://d-nb.info/1168722160/34.
Повний текст джерелаDicko, Hamadou. "Phonon-polaritons/phonons dans les cristaux mixtes à base de ZnSe de structures zincblende et wurtzite : diffusion Raman en avant/arrière, schéma de percolation." Thesis, Université de Lorraine, 2018. http://www.theses.fr/2018LORR0169/document.
Повний текст джерелаInelastic Raman scattering is implemented in the unusual (near-)forward scattering geometry (schematically operating in the ‘transmission mode’) to explore the nature and properties of the (polar) phonon-polariton modes of various ZnSe-based A1-xBxC mixed crystals. An overall insight is searched by selecting systems that relate to the same parent compound for the sake of consistency – namely ZnSe – but with different crystal structures, i.e. of the zincblende (cubic: Zn1-xBexSe, ZnSe1-xSx, ZnxCd1-xSe) and wurtzite (hexagonal: Zn1-xMgxSe) types. Most of all, altogether the retained systems span the full variety of behavior in the native (non polar) phonon regime of the phonon-polaritons, including the over-diversified [1×(A−B),2×(A−C)] and sub-diversified 1×(A−B,A−C) deviations with respect to the nominal [1×(A−B),1×(A−C)] type, also referred to as the multi-mode, 1-mixed-mode and 2-mode types, respectively, in the admitted classification of the conventional Raman spectra of mixed crystals taken in the backscattering geometry (schematically operating in the ‘reflection mode’). Fair contour modeling of the obtained phonon-polariton Raman spectra is achieved within the linear dielectric response theory based on ellipsometry measurements of the refractive index and with ab initio calculations in support done on prototypal impurity motifs in both dilute limits (x~0,1), as needed to secure the reduced set of input parameters that govern the native (non polar) phonon mode behavior of the used mixed crystals. The backward/near-forward Raman spectra are discussed within the scope of the so-called percolation model developed within our group for a renewed understanding of the optical vibration spectra of the mixed crystals. This model formalizes a view that the chemical bonds of a given species vibrate at different frequencies in a mixed crystal depending on their like or foreign environment at the very local (first- or second-neighbor) scale. This introduces a generic 1-bond→2-mode phonon behavior for a mixed crystal, presumably a universal one. The main results enunciate as follows. [...]
Calamba, Katherine. "Phase stability and defect structures in (Ti1-x,Alx)Ny hard coatings." Electronic Thesis or Diss., Université de Lorraine, 2019. http://www.theses.fr/2019LORR0322.
Повний текст джерелаThis study highlights the role of nitrogen vacancies and defect structures in engineering hard coatings with enhanced phase stability and mechanical properties for high temperature applications. Titanium aluminum nitride (Ti,Al)N based materials in the form of thin coatings has remained as an outstanding choice for protection of metal cutting tools due to its superior oxidation resistance and high-temperature wear resistance. High-temperature spinodal decomposition of metastable (Ti,Al)N into coherent c-TiN and c-AlN nm-sized domains results in high hardness at elevated temperatures. Even higher thermal input leads to transformation of c-AlN to w-AlN, which is detrimental to the mechanical properties of the coating. One mean to delay this transformation is to introduce nitrogen vacancies. In this thesis, I show that by combining a reduction of the overall N-content of the c-(Ti,Al)Ny (y < 1) coating with a low substrate bias voltage during cathodic arc deposition an even more pronounced delay of the c-AlN to w-AlN phase transformation is achieved. Under such condition, age hardening is retained until 1100 °C, which is the highest temperature reported for (Ti,Al)N films. During cutting operations, the wear mechanism of the cathodic-arc-deposited c-(Ti0.52Al0.48)Ny with N-contents of y = 0.92, 0.87, and 0.75 films are influenced by the interplay of nitrogen vacancies, microstructure, and chemical reactions with the workpiece material. The y = 0.75 coating contains the highest number of macroparticles and has an inhomogeneous microstructure after machining, which lower its flank and crater wear resistance. Age hardening of the y = 0.92 sample causes its superior flank wear resistance while the dense structure of the y = 0.87 sample prevents chemical wear that results in excellent crater wear resistance. Heteroepitaxial c-(Ti1-x,Alx)Ny (y = 0.92, 0.79, and0.67) films were grown on MgO(001) and (111) substrates using magnetron putter deposition to examine the details of their defect structures during spinodal decomposition. At 900 °C, the films decompose to form coherent c-AlN- and c-TiN- rich domains with elongated shape along the elastically soft <001> direction. Deformation maps show that most strains occur near the interface of the segregated domains and inside the c-TiN domains. Dislocations favorably aggregate in c-TiN rather than c-AlN because the later has stronger directionality of covalent chemical bonds. At elevated temperature, the domain size of (001) and (111)- oriented c-(Ti,Al)Ny films increases with the nitrogen content. This indicates that there is a delay in coarsening due to the presence of more N vacancies in the film. The structural and functional properties (Ti1-x,Alx)Ny are also influenced by its Al content (x). TiN and (Ti1-x,Alx)Ny (y = 1, x = 0.63 and x = 0.77) thin films were grown on MgO(111) substrates using magnetron sputtering technique. Both TiN and Ti0.27Al0.63N films are single crystals with cubic structure. (Ti0.23,Al0.77)N film has epitaxial cubic structure only in the first few atomic layers then it transitions to an epitaxial wurtzite layer, with an orientation relationship of c-(Ti0.23,Al0.77)N(111)[1-10]ǀǀw-(Ti0.23,Al0.77)N(0001)[11-20]. The w-(Ti0.23,Al0.77)N shows phase separation of coherent nm-sized domains with varying chemical composition during growth. After annealing at high temperature, the domains in w-(Ti0.23,Al0.77)N have coarsened. The domains in w-(Ti0.23,Al0.77)N are smaller compared to the domains in c-(Ti0.27,Al0.63)N film that has undergone spinodal decomposition. The results that emerged from this thesis are of great importance in the cutting tool industry and also in the microelectronics industry, because the layers examined have properties that are well suited for diffusion barriers
Walsh, Sean. "Rock Salt vs. Wurtzite Phases of Co1-xMnxO: Control of Crystal Lattice and Morphology at the Nanoscale." Thesis, 2012. http://hdl.handle.net/1911/71699.
Повний текст джерелаЧастини книг з теми "Wurtzite crystal"
Meyer, B. K. "InN, wurtzite modification: spin-orbit splittings, crystal field splitting." In New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds, 271. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-48529-2_125.
Повний текст джерелаVurgaftman, Igor, Matthew P. Lumb, and Jerry R. Meyer. "Absorption and Emission of Light in III–V Semiconductors." In Bands and Photons in III-V Semiconductor Quantum Structures, 93–138. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198767275.003.0004.
Повний текст джерела"Dislocations in Diamond, Zincblende, Wurtzite Structures and SiC." In Classical Theory of Crystal Dislocations, 215–52. WORLD SCIENTIFIC, 2017. http://dx.doi.org/10.1142/9789814749176_0011.
Повний текст джерелаHorodecki, A. J. "Semistatistically Defected Wurtzite Crystal Containing Pairs of Metal-Non-metal Vacancy." In December, 1471–75. De Gruyter, 1987. http://dx.doi.org/10.1515/9783112485446-005.
Повний текст джерелаVerma, R. "Comprehensive Study on Piezo-Phototronic Effect: Way Forward for Ferrite Based Solar Cells." In Materials Research Foundations, 279–310. Materials Research Forum LLC, 2021. http://dx.doi.org/10.21741/9781644901595-8.
Повний текст джерелаVurgaftman, Igor, Matthew P. Lumb, and Jerry R. Meyer. "Detailed k·p Theory for Bulk III–V Semiconductors." In Bands and Photons in III-V Semiconductor Quantum Structures, 55–92. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198767275.003.0003.
Повний текст джерела"Strain Energy of Thin Lattice-Mismatched Layers in Crystals with a Wurtzite Structure." In Statistical Thermodynamics of Semiconductor Alloys, 201–4. Elsevier, 2016. http://dx.doi.org/10.1016/b978-0-12-803987-8.15002-6.
Повний текст джерелаHobodecki, A. J. "On the Possibility of Polytypism in Semistatistically Defected Wurtzite-type Crystals of CdS." In December, 1586–88. De Gruyter, 1987. http://dx.doi.org/10.1515/9783112485446-038.
Повний текст джерелаSchreiber, J., S. Vasnyov, and L. Hoering. "SEM CL studies on dynamics and recombination activity of glide dislocations in zincblende and wurtzite semiconductor crystals." In Microscopy of Semiconducting Materials 2003, 549–54. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074636-124.
Повний текст джерелаТези доповідей конференцій з теми "Wurtzite crystal"
Sibirev, N. V., Y. S. Berdnikov, V. N. Sibirev, and V. G. Dubrovskii. "Stabilization of wurtzite crystal phase in arsenide nanowires via elastic stress." In 2020 International Conference Laser Optics (ICLO). IEEE, 2020. http://dx.doi.org/10.1109/iclo48556.2020.9285853.
Повний текст джерелаMa, Jinlong, Baoling Huang, Wu Li, and Xiaobing Luo. "Intrinsic Thermal Conductivity of Wurtzite AlxGa1-xN, InxGa1-xN and InxAl1-xN From First-Principles Calculation." In ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/ipack2015-48032.
Повний текст джерелаKuo, C. C., W. R. Liu, W. F. Hsieh, C. H. Hsu, H. C. Hsu, and L. C. Chend. "Crystal symmetry breaking of wurtzite to orthorhombic in nonpolar a-ZnO epi-films." In LEOS 2009 -22nd Annuall Meeting of the IEEE Lasers and Electro-Optics Society (LEO). IEEE, 2009. http://dx.doi.org/10.1109/leos.2009.5343083.
Повний текст джерелаDesai, A. V., and M. A. Haque. "Effect of Electromechanical Coupling on the Young’s Modulus of Zinc Oxide Nanowires." In ASME 2008 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2008. http://dx.doi.org/10.1115/detc2008-49911.
Повний текст джерелаRosenthal, S. J., A. T. Yeh, A. P. Alivisatos, and C. V. Shank. "Size Dependent Absorption Anisotropy Measurements of CdSe Nanocrystals: Symmetry Assignments for the Lowest Exciton State." In International Conference on Ultrafast Phenomena. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/up.1996.tue.45.
Повний текст джерелаWilson, William L., M. Bawendi, L. Rothberg, T. Jedju, L. Brus, and M. L. Steigerwald. "Absorption Saturation Dynamics in Capped CdSe Microcrystallites Exhibiting Quantum Confinement." In International Conference on Ultrafast Phenomena. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/up.1990.thc10.
Повний текст джерелаFukui, T., Y. Hiraya, F. Ishizaka, and K. Tomioka. "Phase Transition from Zinc Blende to Wurtzite and Green Emission of AlInP Grown on (10-10) GaN by Crystal Structure Transfer Epitaxy." In 2016 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2016. http://dx.doi.org/10.7567/ssdm.2016.d-4-03.
Повний текст джерелаKushnir, Oleg S., V. A. Grabovski, O. S. Dzendzelyuk, and L. P. Lutsiv-Shumski. "Light propagation in wurtzite-type crystals with the Jones calculus." In International Workshop on Optoelectronic and Hybrid Optical/Digital Systems for Image/Signal Processing, edited by Simon B. Gurevich, Zinovii T. Nazarchuk, and Leonid I. Muravsky. SPIE, 2000. http://dx.doi.org/10.1117/12.388433.
Повний текст джерелаHartung, S., S. Kück, T. Danger, K. Petermann, and G. Huber. "ESA Measurements of Cr4+-doped Crystals with Wurtzite-like Structure." In Advanced Solid State Lasers. Washington, D.C.: OSA, 1996. http://dx.doi.org/10.1364/assl.1996.tl8.
Повний текст джерелаLuan, Xing-He, Chuang Feng, Hong-Bo Qin, Fan-Fan Niu, and Dao-Guo Yang. "The electronic properties of zinc-blende GaN, wurtzite GaN and pnma-GaN crystals under pressure." In 2017 18th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2017. http://dx.doi.org/10.1109/icept.2017.8046716.
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