Статті в журналах з теми "Wide bandgap device"
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Anderson, Travis J., Jennifer K. Hite, and Fan Ren. "Ultra-Wide Bandgap Materials and Device." ECS Journal of Solid State Science and Technology 6, no. 2 (2017): Y1. http://dx.doi.org/10.1149/2.0151702jss.
Повний текст джерелаFirdaus, Yuliar, Qiao He, Lia Muliani, Erlyta Septa Rosa, Martin Heeney, and Thomas D. Anthopoulos. "Charge transport and recombination in wide-bandgap Y6 derivatives-based organic solar cells." Advances in Natural Sciences: Nanoscience and Nanotechnology 13, no. 2 (May 11, 2022): 025001. http://dx.doi.org/10.1088/2043-6262/ac6c23.
Повний текст джерелаSugimoto, M., H. Ueda, T. Uesugi, and T. kachi. "WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONS." International Journal of High Speed Electronics and Systems 17, no. 01 (March 2007): 3–9. http://dx.doi.org/10.1142/s012915640700414x.
Повний текст джерелаKumar, Ashwani, Sheetal Singh, and Divyanshu Shukla. "Preparation Properties and Device Application of ?- Ga2O3: A Review." International Journal for Research in Applied Science and Engineering Technology 10, no. 8 (August 31, 2022): 360–74. http://dx.doi.org/10.22214/ijraset.2022.46195.
Повний текст джерелаKumar, Ashwani, Sheetal Singh, and Divyanshu Shukla. "Preparation Properties and Device Application of ?- Ga2O3: A Review." International Journal for Research in Applied Science and Engineering Technology 10, no. 8 (August 31, 2022): 360–74. http://dx.doi.org/10.22214/ijraset.2022.46195.
Повний текст джерелаLiyanage, Geethika K., Adam B. Phillips, Fadhil K. Alfadhili, and Michael J. Heben. "Numerical Modelling of Front Contact Alignment for High Efficiency Cd1-xZnxTe and Cd1-xMgxTe Solar Cells for Tandem Devices." MRS Advances 3, no. 52 (2018): 3121–28. http://dx.doi.org/10.1557/adv.2018.501.
Повний текст джерелаYuan, Chao, Riley Hanus, and Samuel Graham. "A review of thermoreflectance techniques for characterizing wide bandgap semiconductors’ thermal properties and devices’ temperatures." Journal of Applied Physics 132, no. 22 (December 14, 2022): 220701. http://dx.doi.org/10.1063/5.0122200.
Повний текст джерелаKizilyalli, Isik C., Olga Blum Spahn, and Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future." ECS Transactions 109, no. 8 (September 30, 2022): 3–12. http://dx.doi.org/10.1149/10908.0003ecst.
Повний текст джерелаRahman, Md Wahidur, Chandan Joishi, Nidhin Kurian Kalarickal, Hyunsoo Lee, and Siddharth Rajan. "High-Permittivity Dielectric for High-Performance Wide Bandgap Electronic Devices." ECS Meeting Abstracts MA2022-02, no. 32 (October 9, 2022): 1210. http://dx.doi.org/10.1149/ma2022-02321210mtgabs.
Повний текст джерелаCheng, Zhe. "(Invited, Digital Presentation) Thermal Conductance across Heterogeneously Integrated Interfaces for Thermal Management of Wide and Ultra-Wide Bandgap Electronics." ECS Meeting Abstracts MA2022-01, no. 31 (July 7, 2022): 1318. http://dx.doi.org/10.1149/ma2022-01311318mtgabs.
Повний текст джерелаKizilyalli, Isik C., Olga Blum Spahn, and Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future." ECS Meeting Abstracts MA2022-02, no. 37 (October 9, 2022): 1344. http://dx.doi.org/10.1149/ma2022-02371344mtgabs.
Повний текст джерелаSampayan, S. E., Mihail Bora, Craig Brooksby, G. J. Caporaso, Adam Conway, Steve Hawkins, Brad Hickman, et al. "High Voltage Wide Bandgap Photoconductive Switching." Materials Science Forum 821-823 (June 2015): 871–74. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.871.
Повний текст джерелаQin, Bingchao, Dongyang Wang, Xixi Liu, Yongxin Qin, Jin-Feng Dong, Jiangfan Luo, Jing-Wei Li, et al. "Power generation and thermoelectric cooling enabled by momentum and energy multiband alignments." Science 373, no. 6554 (July 8, 2021): 556–61. http://dx.doi.org/10.1126/science.abi8668.
Повний текст джерелаSaadeh, Osama, Ahmad Al-Hmoud, and Zakariya Dalala. "Characterization Circuit, Gate Driver and Fixture for Wide-Bandgap Power Semiconductor Device Testing." Electronics 9, no. 5 (April 25, 2020): 703. http://dx.doi.org/10.3390/electronics9050703.
Повний текст джерелаLoong, Ling Jin, Chockalingam Aravind Vaithilingam, Gowthamraj Rajendran, and Venkatkumar Muneeswaran. "Modelling and analysis of vienna rectifier for more electric aircraft applications using wide band-gap materials." Journal of Physics: Conference Series 2120, no. 1 (December 1, 2021): 012027. http://dx.doi.org/10.1088/1742-6596/2120/1/012027.
Повний текст джерелаAhn, Byung Tae, Liudmila Larina, Ki Hwan Kim, and Soong Ji Ahn. "Development of new buffer layers for Cu(In,Ga)Se2 solar cells." Pure and Applied Chemistry 80, no. 10 (January 1, 2008): 2091–102. http://dx.doi.org/10.1351/pac200880102091.
Повний текст джерелаBindra, Ashok. "Joint Electronic Device Engineering Council JC-70 for Wide-Bandgap Devices [Society News]." IEEE Power Electronics Magazine 4, no. 4 (December 2017): 77. http://dx.doi.org/10.1109/mpel.2017.2762429.
Повний текст джерелаAgarwal, Anant, Woong Je Sung, Laura Marlino, Pawel Gradzki, John Muth, Robert Ivester, and Nick Justice. "Wide Band Gap Semiconductor Technology for Energy Efficiency." Materials Science Forum 858 (May 2016): 797–802. http://dx.doi.org/10.4028/www.scientific.net/msf.858.797.
Повний текст джерелаKumar, Ashok, Mustaque A. Khan, and Mahesh Kumar. "Recent advances in UV photodetectors based on 2D materials: a review." Journal of Physics D: Applied Physics 55, no. 13 (November 19, 2021): 133002. http://dx.doi.org/10.1088/1361-6463/ac33d7.
Повний текст джерелаShenai, K. "A Critique of Wide Bandgap (WBG) Power Semiconductor Device Datasheets." ECS Transactions 64, no. 7 (August 8, 2014): 13–17. http://dx.doi.org/10.1149/06407.0013ecst.
Повний текст джерелаWang, Xiang Guo, and Masayuki Yamamoto. "A Study on Fastening the Switching Speed for Wide Bandgap Semiconductor Based Super Cascode." Materials Science Forum 963 (July 2019): 823–26. http://dx.doi.org/10.4028/www.scientific.net/msf.963.823.
Повний текст джерелаMa, Yunlong, Zhenjing Kang, and Qingdong Zheng. "Recent advances in wide bandgap semiconducting polymers for polymer solar cells." Journal of Materials Chemistry A 5, no. 5 (2017): 1860–72. http://dx.doi.org/10.1039/c6ta09325f.
Повний текст джерелаCarlson, Eric P., Daniel W. Cunningham, Yan Zhi Xu, and Isik C. Kizilyalli. "Power Electronic Devices and Systems Based on Bulk GaN Substrates." Materials Science Forum 924 (June 2018): 799–804. http://dx.doi.org/10.4028/www.scientific.net/msf.924.799.
Повний текст джерелаJi, Dong, and Srabanti Chowdhury. "On the Progress Made in GaN Vertical Device Technology." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940010. http://dx.doi.org/10.1142/s012915641940010x.
Повний текст джерелаAlamoudi, Hadeel, Bin Xin, Somak Mitra, Mohamed N. Hedhili, Singaravelu Venkatesh, Dhaifallah Almalawi, Norah Alwadai, Zohoor Alharbi, Ahmad Subahi, and Iman S. Roqan. "Enhanced solar-blind deep UV photodetectors based on solution-processed p-MnO quantum dots and n-GaN p–n junction-structure." Applied Physics Letters 120, no. 12 (March 21, 2022): 122102. http://dx.doi.org/10.1063/5.0083259.
Повний текст джерелаLi, Jiahao, Yanda Ji, Rui Pan, Run Zhao, Ye Yuan, Weiwei Li та Hao Yang. "Fowler-Nordheim tunneling in β-Ga2O3/SrRuO3 Schottky interfaces". Journal of Physics D: Applied Physics 55, № 21 (25 лютого 2022): 210003. http://dx.doi.org/10.1088/1361-6463/ac5356.
Повний текст джерелаBiswas, Abhijit, Mingfei Xu, Kai Fu, Jingan Zhou, Rui Xu, Anand B. Puthirath, Jordan A. Hachtel, et al. "Properties and device performance of BN thin films grown on GaN by pulsed laser deposition." Applied Physics Letters 121, no. 9 (August 29, 2022): 092105. http://dx.doi.org/10.1063/5.0092356.
Повний текст джерелаWang, Xin, Zongtao Wang, Mingwei Li, Lijun Tu, Ke Wang, Dengping Xiao, Qiang Guo, et al. "A New Dibenzoquinoxalineimide-Based Wide-Bandgap Polymer Donor for Polymer Solar Cells." Polymers 14, no. 17 (August 30, 2022): 3590. http://dx.doi.org/10.3390/polym14173590.
Повний текст джерелаBandyopadhyay, Avra S., Gustavo A. Saenz, and Anupama Kaul. "Characterization of Few layer Tungsten diselenide based FET under Thermal Excitation." MRS Advances 2, no. 60 (2017): 3721–26. http://dx.doi.org/10.1557/adv.2017.490.
Повний текст джерелаJamal-Eddine, Zane, Yuewei Zhang, and Siddharth Rajan. "Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940012. http://dx.doi.org/10.1142/s0129156419400123.
Повний текст джерелаMorvan, Erwan, Alexandre Kerlain, Christian Dua, and Christian Brylinski. "Influence of Material Properties on Wide-Bandgap Microwave Power Device Characteristics." Materials Science Forum 433-436 (September 2003): 731–36. http://dx.doi.org/10.4028/www.scientific.net/msf.433-436.731.
Повний текст джерелаOshima, Yuichi, та Elaheh Ahmadi. "Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications". Applied Physics Letters 121, № 26 (26 грудня 2022): 260501. http://dx.doi.org/10.1063/5.0126698.
Повний текст джерелаGunshor, Robert L., and Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research." MRS Bulletin 20, no. 7 (July 1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.
Повний текст джерелаBercu, Nicolas, Mihai Lazar, Olivier Simonetti, Pierre Michel Adam, Mélanie Brouillard, and Louis Giraudet. "KPFM - Raman Spectroscopy Coupled Technique for the Characterization of Wide Bandgap Semiconductor Devices." Materials Science Forum 1062 (May 31, 2022): 330–34. http://dx.doi.org/10.4028/p-c35702.
Повний текст джерелаGoorsky, Mark S., Michael Evan Liao, Kenny Huynh, Yekan Wang, Brandon Carson, Lezli Matto, and Aviram Bhalla-Levine. "(Invited) Heterogeneous Materials Integration for Wide Bandgap Semiconductors." ECS Meeting Abstracts MA2022-02, no. 37 (October 9, 2022): 1347. http://dx.doi.org/10.1149/ma2022-02371347mtgabs.
Повний текст джерелаShur, Michael S., and M. Asif Khan. "GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors." MRS Bulletin 22, no. 2 (February 1997): 44–50. http://dx.doi.org/10.1557/s0883769400032565.
Повний текст джерелаChen, Bingbing, Pengyang Wang, Ningyu Ren, Renjie Li, Ying Zhao, and Xiaodan Zhang. "Tin dioxide buffer layer-assisted efficiency and stability of wide-bandgap inverted perovskite solar cells." Journal of Semiconductors 43, no. 5 (May 1, 2022): 052201. http://dx.doi.org/10.1088/1674-4926/43/5/052201.
Повний текст джерелаStabach, Jennifer, Zach Cole, Chad B. O'Neal, Brice McPherson, Robert Shaw, and Brandon Passmore. "A High Performance Power Package for Wide Bandgap Semiconductors Using Novel Wire Bondless Power Interconnections." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000353–58. http://dx.doi.org/10.4071/isom-2015-wp16.
Повний текст джерелаCui, Hao, Zizheng Qin, Haohang Sun, Zhanguo Chen, and Weiping Qin. "Near-infrared light excitation of h-BN ultra-wide bandgap semiconductor." Applied Physics Letters 121, no. 24 (December 12, 2022): 241101. http://dx.doi.org/10.1063/5.0131613.
Повний текст джерелаZhao, Qiang, Michael Lukitsch, Jie Xu, Gregory Auner, Ratna Niak, and Pao-Kuang Kuo. "Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 852–58. http://dx.doi.org/10.1557/s1092578300005172.
Повний текст джерелаZhang, Xuan, Chengcheng Yao, Cong Li, Lixing Fu, Feng Guo, and Jin Wang. "A Wide Bandgap Device-Based Isolated Quasi-Switched-Capacitor DC/DC Converter." IEEE Transactions on Power Electronics 29, no. 5 (May 2014): 2500–2510. http://dx.doi.org/10.1109/tpel.2013.2287501.
Повний текст джерелаShikata, Shinichi. "Potential and Challenges of Diamond Wafer Toward Power Electronics." International Journal of Automation Technology 12, no. 2 (March 1, 2018): 175–78. http://dx.doi.org/10.20965/ijat.2018.p0175.
Повний текст джерелаIkenoue, Takumi, Satoshi Yoneya, Masao Miyake, and Tetsuji Hirato. "Epitaxial Growth and Bandgap Control of Ni1-xMgxO Thin Film Grown by Mist Chemical Vapor Deposition Method." MRS Advances 5, no. 31-32 (2020): 1705–12. http://dx.doi.org/10.1557/adv.2020.219.
Повний текст джерелаPan, James, Shamima Afroz, Scott Suko, James D. Oliver, and Thomas Knight. "High Workfunction, Compound Gate Metal Engineering for Low DIBL, High Gain, High Density Advanced RF Power Static Induction Transistor (SIT) and HV Schottky Diode in 4H Silicon Carbide." Materials Science Forum 924 (June 2018): 641–44. http://dx.doi.org/10.4028/www.scientific.net/msf.924.641.
Повний текст джерелаReese, Samantha, Kelsey Horowitz, Timothy Remo, and Margaret Mann. "Regional Manufacturing Cost Structures and Supply Chain Considerations for SiC Power Electronics in Medium Voltage Motor Drives." Materials Science Forum 924 (June 2018): 518–22. http://dx.doi.org/10.4028/www.scientific.net/msf.924.518.
Повний текст джерелаJiang, Qi, Jinhui Tong, Rebecca A. Scheidt, Xiaoming Wang, Amy E. Louks, Yeming Xian, Robert Tirawat, et al. "Compositional texture engineering for highly stable wide-bandgap perovskite solar cells." Science 378, no. 6626 (December 23, 2022): 1295–300. http://dx.doi.org/10.1126/science.adf0194.
Повний текст джерелаWang, Yen Po, Hsin Chieh Li, Yan Chi Huang, and Chih Shan Tan. "Synthesis and Applications of Halide Perovskite Nanocrystals in Optoelectronics." Inorganics 11, no. 1 (January 11, 2023): 39. http://dx.doi.org/10.3390/inorganics11010039.
Повний текст джерелаMi, Zetian, Ping Wang, David Laleyan, and Yuanpeng Wu. "(Invited) Monolayer h-BN: Epitaxy, Properties, and Emerging Device Applications." ECS Meeting Abstracts MA2022-01, no. 20 (July 7, 2022): 1107. http://dx.doi.org/10.1149/ma2022-01201107mtgabs.
Повний текст джерелаOnyeaju, M. C., A. N. Ikot, C. A. Onate, E. Aghemenloh, and H. Hassanabadi. "Electronic states in core/shell GaN/YxGa1−xN quantum well (QW) with the modified Pöschl–Teller plus Woods–Saxon potential in the presence of electric field." International Journal of Modern Physics B 31, no. 15 (March 7, 2017): 1750119. http://dx.doi.org/10.1142/s0217979217501193.
Повний текст джерелаSeo, Jung-Hun. "Editorial for the Special Issue on Wide Bandgap Semiconductor Based Micro/Nano Devices." Micromachines 10, no. 3 (March 26, 2019): 213. http://dx.doi.org/10.3390/mi10030213.
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