Книги з теми "Wide bandgap device"
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Buzzo, Marco. Dopant imaging and profiling of wide bandgap semiconductor devices. Konstanz: Hartung-Gorre, 2007.
Знайти повний текст джерелаSzweda, Roy. Gallium nitride & related wide bandgap materials & devices: A market & technology overview 1996-2001. Oxford, UK: Elsevier Advanced Technology, 1997.
Знайти повний текст джерелаFerro, Gabriel. 2010 wide bandgap cubic semiconductors: From growth to devices : proceedings of the E-MRS Symposium F, Strasbourg, France, 8-10 June 2010. Edited by European Materials Research Society. Meeting, American Institute of Physics, and European Science Foundation. Melville, N.Y: American Institute of Physics, 2010.
Знайти повний текст джерелаSymposium on Wide Bandgap Semiconductors and Devices (1995 Chicago, Ill.). Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII). Pennington, NJ: Electrochemical Society, 1995.
Знайти повний текст джерелаPhiladelphia, Pa ). State-of-the-Art Program on Compound Semiconductors (36th 2002. State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II: Proceedings of the international symposia. Pennington, NJ: Electrochemical Society, 2002.
Знайти повний текст джерелаState-of-the-Art, Program on Compound Semiconductors (47th 2007 Washington DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Pennington, NJ: Electrochemical Society, 2007.
Знайти повний текст джерелаState-of-the-Art Program on Compound Semiconductors (47th 2007 Washington, DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Edited by Wang J, Electrochemical Society Meeting, Electrochemical Society. Electronics and Photonics Division., Electrochemical Society. Luminescence and Display Materials Division., Electrochemical Society Sensor Division, and Symposium on Wide Bandgap Semiconductor Materials and Devices (8th : 2007 : Washington, DC). Pennington, NJ: Electrochemical Society, 2007.
Знайти повний текст джерелаState-of-the-Art Program on Compound Semiconductors (47th 2007 Washington, DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Edited by Wang J, Electrochemical Society Meeting, Electrochemical Society. Electronics and Photonics Division., Electrochemical Society. Luminescence and Display Materials Division., Electrochemical Society Sensor Division, and Symposium on Wide Bandgap Semiconductor Materials and Devices (8th : 2007 : Washington, DC). Pennington, NJ: Electrochemical Society, 2007.
Знайти повний текст джерелаState-of-the-Art Program on Compound Semiconductors (47th 2007 Washington, DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Edited by Wang J, Electrochemical Society Meeting, Electrochemical Society. Electronics and Photonics Division., Electrochemical Society. Luminescence and Display Materials Division., Electrochemical Society Sensor Division, and Symposium on Wide Bandgap Semiconductor Materials and Devices (8th : 2007 : Washington, DC). Pennington, NJ: Electrochemical Society, 2007.
Знайти повний текст джерелаState-of-the-Art Program on Compound Semiconductors (45rd 2006 Cancun, Mex.). State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) and Wide Bandgap Semiconductor Materials and Devices 7 / editors, F. Ren ... [et al.]. Pennington, NJ: Electrochemical Society, 2006.
Знайти повний текст джерелаWide Bandgap Based Devices. MDPI, 2021. http://dx.doi.org/10.3390/books978-3-0365-0567-1.
Повний текст джерелаFan, Ren, and Zolper J. C, eds. Wide energy bandgap electronic devices. River Edge, NJ: World Scientific Pub., 2003.
Знайти повний текст джерелаWide energy bandgap electronic devices. Singapore: World Scientific Pub., 2003.
Знайти повний текст джерелаRen, Fan, and John C. Zolper. Wide Energy Bandgap Electronic Devices. WORLD SCIENTIFIC, 2003. http://dx.doi.org/10.1142/5173.
Повний текст джерелаWide Bandgap Semiconductor Power Devices. Elsevier, 2019. http://dx.doi.org/10.1016/c2016-0-04021-4.
Повний текст джерелаRen, Fan, Randy J. Shul, Wilfried Pletschen, and Masanori Murakami. Wide-Bandgap Electronic Devices: Volume 622. University of Cambridge ESOL Examinations, 2014.
Знайти повний текст джерелаDutta, Achyut K., Mohammad Matin, and Abdul A. S. Awwal. Wide Bandgap Power Devices and Applications. SPIE, 2017.
Знайти повний текст джерелаSingisetti, Uttam, Towhidur Razzak, and Yuewei Zhang. Wide Bandgap Semiconductor Electronics and Devices. WORLD SCIENTIFIC, 2020. http://dx.doi.org/10.1142/11719.
Повний текст джерелаJiang, Hongxing, Gertrude F. Neumark, and Igor L. Kuskovsky. Wide Bandgap Light Emitting Materials and Devices. Wiley & Sons, Incorporated, John, 2008.
Знайти повний текст джерелаCharacterization of Wide Bandgap Power Semiconductor Devices. Institution of Engineering & Technology, 2018.
Знайти повний текст джерелаJiang, Hongxing, Gertrude F. Neumark, and Igor L. Kuskovsky. Wide Bandgap Light Emitting Materials and Devices. Wiley & Sons, Limited, John, 2007.
Знайти повний текст джерелаDutta, Achyut, Mohammad Matin, and Srabanti Chowdhury. Wide Bandgap Power Devices and Applications II. SPIE, 2018.
Знайти повний текст джерелаWang, Fei (Fred), Zheyu Zhang, and Edward A. Jones. Characterization of Wide Bandgap Power Semiconductor Devices. Institution of Engineering and Technology, 2018. http://dx.doi.org/10.1049/pbpo128e.
Повний текст джерелаNeumark, Gertrude F., Igor L. Kuskovsky, and Hongxing Jiang, eds. Wide Bandgap Light Emitting Materials and Devices. Wiley, 2007. http://dx.doi.org/10.1002/9783527617074.
Повний текст джерелаWide Bandgap Semiconductor Based Micro/Nano Devices. MDPI, 2019. http://dx.doi.org/10.3390/books978-3-03897-843-5.
Повний текст джерелаF, Neumark Gertrude, Kuskovsky Igor L, and Jiang H. X, eds. Wide bandgap light emitting materials and devices. Weinheim: Wiley-VCH, 2007.
Знайти повний текст джерела(Editor), Gertrude F. Neumark, Igor L. Kuskovsky (Editor), and Hongxing Jiang (Editor), eds. Wide Bandgap Light Emitting Materials And Devices. Wiley-VCH, 2007.
Знайти повний текст джерелаWang, Fei, Zheyu Zhang, and Edward A. Jones. Characterization of Wide Bandgap Power Semiconductor Devices. Institution of Engineering & Technology, 2018.
Знайти повний текст джерелаNitride Wide Bandgap Semiconductor Material and Electronic Devices. Taylor & Francis Group, 2016.
Знайти повний текст джерелаHao, Yue, Jin Feng Zhang, and Jin Cheng Zhang. Nitride Wide Bandgap Semiconductor Material and Electronic Devices. Taylor & Francis Group, 2016.
Знайти повний текст джерелаHao, Yue, Jin Feng Zhang, and Jin Cheng Zhang. Nitride Wide Bandgap Semiconductor Material and Electronic Devices. Taylor & Francis Group, 2016.
Знайти повний текст джерелаHao, Yue, Jincheng Zhang, and Jinfeng Zhang. Nitride Wide Bandgap Semiconductor Material and Electronic Devices. Taylor & Francis Group, 2020.
Знайти повний текст джерелаHao, Yue, Jin Feng Zhang, and Jin Cheng Zhang. Nitride Wide Bandgap Semiconductor Material and Electronic Devices. Taylor & Francis Group, 2016.
Знайти повний текст джерелаHao, Yue, Jin Feng Zhang, and Jin Cheng Zhang. Nitride Wide Bandgap Semiconductor Material and Electronic Devices. Taylor & Francis Group, 2016.
Знайти повний текст джерелаWellmann, Peter, Noboru Ohtani, and Roland Rupp. Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications. Wiley & Sons, Incorporated, John, 2021.
Знайти повний текст джерелаWellmann, Peter, Noboru Ohtani, and Roland Rupp. Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications. Wiley & Sons, Incorporated, John, 2021.
Знайти повний текст джерелаWellmann, Peter, Noboru Ohtani, and Roland Rupp. Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications. Wiley & Sons, Incorporated, John, 2021.
Знайти повний текст джерела(Editor), Kiyoshi Takahashi, Akihiko Yoshikawa (Editor), and Adarsh Sandhu (Editor), eds. Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices. Springer, 2007.
Знайти повний текст джерелаBaliga, B. Jayant. Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications. Elsevier Science & Technology, 2018.
Знайти повний текст джерелаVerzellesi, Giovanni, ed. Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II. MDPI, 2022. http://dx.doi.org/10.3390/books978-3-0365-3993-5.
Повний текст джерелаBaliga, B. Jayant. Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design, and Applications. Elsevier Science & Technology, 2018.
Знайти повний текст джерелаTakahashi, Kiyoshi, Akihiko Yoshikawa, and Adarsh Sandhu. Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices. Springer, 2010.
Знайти повний текст джерелаWellmann, Peter. Wide Bandgap Materials for Power Electronic Applications: Materials, Devices, and Applications. Wiley & Sons, Limited, John, 2021.
Знайти повний текст джерелаTakahashi, Kiyoshi, Akihiko Yoshikawa, and Adarsh Sandhu. Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices. Springer London, Limited, 2007.
Знайти повний текст джерелаStaff, IEEE. 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). IEEE, 2021.
Знайти повний текст джерелаStaff, IEEE. 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia). IEEE, 2021.
Знайти повний текст джерелаStaff, IEEE. 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia). IEEE, 2021.
Знайти повний текст джерелаSzweda, R. Gallium Nitride and Related Wide Bandgap Materials & Devices. A Market and Technology Overview 1998-2003. 2nd ed. Elsevier Science, 2000.
Знайти повний текст джерелаSzweda, R. Gallium Nitride and Related Wide Bandgap Materials and Devices: A Market and Technology Overview 1998-2003. Elsevier Science & Technology Books, 2000.
Знайти повний текст джерела(Editor), R. J. Shul, Fan Ren (Editor), Wilfried Pletschen (Editor), and Masanori Murakami (Editor), eds. Wide-Bandgap Electronic Devices: Symposium Held April 24-27, 2000, San Francisco, California, U.S.A. (Materials Research Society Symposia Proceedings, V. 622.). Materials Research Society, 2001.
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