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Статті в журналах з теми "Wide bandgap device"
Anderson, Travis J., Jennifer K. Hite, and Fan Ren. "Ultra-Wide Bandgap Materials and Device." ECS Journal of Solid State Science and Technology 6, no. 2 (2017): Y1. http://dx.doi.org/10.1149/2.0151702jss.
Повний текст джерелаFirdaus, Yuliar, Qiao He, Lia Muliani, Erlyta Septa Rosa, Martin Heeney, and Thomas D. Anthopoulos. "Charge transport and recombination in wide-bandgap Y6 derivatives-based organic solar cells." Advances in Natural Sciences: Nanoscience and Nanotechnology 13, no. 2 (May 11, 2022): 025001. http://dx.doi.org/10.1088/2043-6262/ac6c23.
Повний текст джерелаSugimoto, M., H. Ueda, T. Uesugi, and T. kachi. "WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONS." International Journal of High Speed Electronics and Systems 17, no. 01 (March 2007): 3–9. http://dx.doi.org/10.1142/s012915640700414x.
Повний текст джерелаKumar, Ashwani, Sheetal Singh, and Divyanshu Shukla. "Preparation Properties and Device Application of ?- Ga2O3: A Review." International Journal for Research in Applied Science and Engineering Technology 10, no. 8 (August 31, 2022): 360–74. http://dx.doi.org/10.22214/ijraset.2022.46195.
Повний текст джерелаKumar, Ashwani, Sheetal Singh, and Divyanshu Shukla. "Preparation Properties and Device Application of ?- Ga2O3: A Review." International Journal for Research in Applied Science and Engineering Technology 10, no. 8 (August 31, 2022): 360–74. http://dx.doi.org/10.22214/ijraset.2022.46195.
Повний текст джерелаLiyanage, Geethika K., Adam B. Phillips, Fadhil K. Alfadhili, and Michael J. Heben. "Numerical Modelling of Front Contact Alignment for High Efficiency Cd1-xZnxTe and Cd1-xMgxTe Solar Cells for Tandem Devices." MRS Advances 3, no. 52 (2018): 3121–28. http://dx.doi.org/10.1557/adv.2018.501.
Повний текст джерелаYuan, Chao, Riley Hanus, and Samuel Graham. "A review of thermoreflectance techniques for characterizing wide bandgap semiconductors’ thermal properties and devices’ temperatures." Journal of Applied Physics 132, no. 22 (December 14, 2022): 220701. http://dx.doi.org/10.1063/5.0122200.
Повний текст джерелаKizilyalli, Isik C., Olga Blum Spahn, and Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future." ECS Transactions 109, no. 8 (September 30, 2022): 3–12. http://dx.doi.org/10.1149/10908.0003ecst.
Повний текст джерелаRahman, Md Wahidur, Chandan Joishi, Nidhin Kurian Kalarickal, Hyunsoo Lee, and Siddharth Rajan. "High-Permittivity Dielectric for High-Performance Wide Bandgap Electronic Devices." ECS Meeting Abstracts MA2022-02, no. 32 (October 9, 2022): 1210. http://dx.doi.org/10.1149/ma2022-02321210mtgabs.
Повний текст джерелаCheng, Zhe. "(Invited, Digital Presentation) Thermal Conductance across Heterogeneously Integrated Interfaces for Thermal Management of Wide and Ultra-Wide Bandgap Electronics." ECS Meeting Abstracts MA2022-01, no. 31 (July 7, 2022): 1318. http://dx.doi.org/10.1149/ma2022-01311318mtgabs.
Повний текст джерелаДисертації з теми "Wide bandgap device"
Sathyanarayanan, Arvind Shanmuganaathan. "Analysis of Reflected Wave Phenomenon on Wide Bandgap Device Switching Performance." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu149273424426787.
Повний текст джерелаShao, Ye. "Study of wide bandgap semiconductor nanowire field effect transistor and resonant tunneling device." The Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1448230793.
Повний текст джерелаMahadik, Nadeemullah A. "Non-destructive x-ray characterization of wide-bandgap semiconductor materials and device structures." Fairfax, VA : George Mason University, 2008. http://hdl.handle.net/1920/3404.
Повний текст джерелаVita: p. 104. Thesis director: Mulpuri V. Rao. Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering. Title from PDF t.p. (viewed Mar. 17, 2009). Includes bibliographical references (p. 99-103). Also issued in print.
Deshpande, Amol Rajendrakumar. "Design of A Silicon and Wide-Bandgap Device Based Hybrid Switch for Power Electronics Converter." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1461238625.
Повний текст джерелаHontz, Michael Robert. "Next Generation Integrated Behavioral and Physics-based Modeling of Wide Bandgap Semiconductor Devices for Power Electronics." University of Toledo / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1556718365514067.
Повний текст джерелаSwenberg, Johanes F. N. McGill T. C. McGill T. C. "Development of wide-bandgap II-VI semiconductor light-emitting device technology based on the graded injector design /." Diss., Pasadena, Calif. : California Institute of Technology, 1995. http://resolver.caltech.edu/CaltechETD:etd-10122007-142152.
Повний текст джерелаRafique, Subrina. "Growth, Characterization and Device Demonstration of Ultra-Wide Bandgap ß-Ga2O3 by Low Pressure Chemical Vapor Deposition." Case Western Reserve University School of Graduate Studies / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=case1512652677980762.
Повний текст джерелаAllen, Noah Patrick. "Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes." Diss., Virginia Tech, 2004. http://hdl.handle.net/10919/102924.
Повний текст джерелаDoctor of Philosophy
Allen, Noah P. "Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes." Diss., Virginia Tech, 2019. http://hdl.handle.net/10919/102924.
Повний текст джерелаDoctor of Philosophy
Xia, Zhanbo. "Materials and Device Engineering for High Performance β-Ga2O3-based Electronics". The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1587688595358557.
Повний текст джерелаКниги з теми "Wide bandgap device"
Buzzo, Marco. Dopant imaging and profiling of wide bandgap semiconductor devices. Konstanz: Hartung-Gorre, 2007.
Знайти повний текст джерелаSzweda, Roy. Gallium nitride & related wide bandgap materials & devices: A market & technology overview 1996-2001. Oxford, UK: Elsevier Advanced Technology, 1997.
Знайти повний текст джерелаFerro, Gabriel. 2010 wide bandgap cubic semiconductors: From growth to devices : proceedings of the E-MRS Symposium F, Strasbourg, France, 8-10 June 2010. Edited by European Materials Research Society. Meeting, American Institute of Physics, and European Science Foundation. Melville, N.Y: American Institute of Physics, 2010.
Знайти повний текст джерелаSymposium on Wide Bandgap Semiconductors and Devices (1995 Chicago, Ill.). Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII). Pennington, NJ: Electrochemical Society, 1995.
Знайти повний текст джерелаPhiladelphia, Pa ). State-of-the-Art Program on Compound Semiconductors (36th 2002. State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II: Proceedings of the international symposia. Pennington, NJ: Electrochemical Society, 2002.
Знайти повний текст джерелаState-of-the-Art, Program on Compound Semiconductors (47th 2007 Washington DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Pennington, NJ: Electrochemical Society, 2007.
Знайти повний текст джерелаState-of-the-Art Program on Compound Semiconductors (47th 2007 Washington, DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Edited by Wang J, Electrochemical Society Meeting, Electrochemical Society. Electronics and Photonics Division., Electrochemical Society. Luminescence and Display Materials Division., Electrochemical Society Sensor Division, and Symposium on Wide Bandgap Semiconductor Materials and Devices (8th : 2007 : Washington, DC). Pennington, NJ: Electrochemical Society, 2007.
Знайти повний текст джерелаState-of-the-Art Program on Compound Semiconductors (47th 2007 Washington, DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Edited by Wang J, Electrochemical Society Meeting, Electrochemical Society. Electronics and Photonics Division., Electrochemical Society. Luminescence and Display Materials Division., Electrochemical Society Sensor Division, and Symposium on Wide Bandgap Semiconductor Materials and Devices (8th : 2007 : Washington, DC). Pennington, NJ: Electrochemical Society, 2007.
Знайти повний текст джерелаState-of-the-Art Program on Compound Semiconductors (47th 2007 Washington, DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Edited by Wang J, Electrochemical Society Meeting, Electrochemical Society. Electronics and Photonics Division., Electrochemical Society. Luminescence and Display Materials Division., Electrochemical Society Sensor Division, and Symposium on Wide Bandgap Semiconductor Materials and Devices (8th : 2007 : Washington, DC). Pennington, NJ: Electrochemical Society, 2007.
Знайти повний текст джерелаState-of-the-Art Program on Compound Semiconductors (45rd 2006 Cancun, Mex.). State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) and Wide Bandgap Semiconductor Materials and Devices 7 / editors, F. Ren ... [et al.]. Pennington, NJ: Electrochemical Society, 2006.
Знайти повний текст джерелаЧастини книг з теми "Wide bandgap device"
Mazumder, S. K., A. Mojab, and H. Riazmontazer. "Optically-Switched Wide-Bandgap Power Semiconductor Devices and Device-Transition Control." In Physics of Semiconductor Devices, 57–65. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_14.
Повний текст джерелаRafiqul Islam, Md, Roisul H. Galib, Montajar Sarkar, and Shaestagir Chowdhury. "Wide-Bandgap Semiconductor Device Technologies for High-Temperature and Harsh Environment Applications." In Harsh Environment Electronics, 1–29. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2019. http://dx.doi.org/10.1002/9783527813964.ch1.
Повний текст джерелаKawakami, Yoichi, Satoshi Kamiyama, Gen-Ichi Hatakoshi, Takashi Mukai, Yukio Narukawa, Ichirou Nomura, Katsumi Kishino, et al. "Photonic Devices." In Wide Bandgap Semiconductors, 97–230. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-47235-3_3.
Повний текст джерелаMiyamoto, Hironobu, Manabu Arai, Hiroshi Kawarada, Naoharu Fujimori, Sadafumi Yoshida, Takashi Shinohe, Akio Hiraki, Hirohisa Hiraki, Hideomi Koinuma, and Masao Katayama. "Electronic Devices." In Wide Bandgap Semiconductors, 231–80. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-47235-3_4.
Повний текст джерелаKumano, Hidekazu, Ikuo Suemune, Katsumi Kishino, Shizuo Fujita, Adarsh Sandhu, Nobuo Suzuki, and Kazuhiro Ohkawa. "Novel Nano-Heterostructure Materials and Related Devices." In Wide Bandgap Semiconductors, 281–327. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-47235-3_5.
Повний текст джерелаLutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. "MOS Transistors and Field Controlled Wide Bandgap Devices." In Semiconductor Power Devices, 341–90. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-70917-8_9.
Повний текст джерелаCavenett, B. C., K. A. Prior, S. Y. Wang, and J. Simpson. "Wide Bandgap II–VI Light Emitting Devices." In Optical Information Technology, 103–9. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78140-7_12.
Повний текст джерелаSingh, Rajan, T. R. Lenka, D. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen. "RF Performance of Ultra-wide Bandgap HEMTs." In Emerging Trends in Terahertz Solid-State Physics and Devices, 49–63. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-3235-1_4.
Повний текст джерелаShimada, Ryoko, Ümit Özgür, and Hadis Morkoç. "Polariton Devices Based on Wide Bandgap Semiconductor Microcavities." In Nanoscale Photonics and Optoelectronics, 47–64. New York, NY: Springer New York, 2010. http://dx.doi.org/10.1007/978-1-4419-7587-4_3.
Повний текст джерелаGupta, K. M., and Nishu Gupta. "Overview of Crystals, Bonding, Imperfections, Atomic Models, Narrow and Wide Bandgap Semiconductors and, Semiconductor Devices." In Advanced Semiconducting Materials and Devices, 41–85. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-19758-6_2.
Повний текст джерелаТези доповідей конференцій з теми "Wide bandgap device"
"Wide bandgap." In 2011 69th Annual Device Research Conference (DRC). IEEE, 2011. http://dx.doi.org/10.1109/drc.2011.5994509.
Повний текст джерела"Wide Bandgap Devices." In 2007 65th Annual Device Research Conference. IEEE, 2007. http://dx.doi.org/10.1109/drc.2007.4373634.
Повний текст джерела"Wide bandgap devices." In 2009 67th Annual Device Research Conference (DRC). IEEE, 2009. http://dx.doi.org/10.1109/drc.2009.5354926.
Повний текст джерела"Wide bandgap devices." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548291.
Повний текст джерела"Wide bandgap devices." In 2010 68th Annual Device Research Conference (DRC). IEEE, 2010. http://dx.doi.org/10.1109/drc.2010.5551903.
Повний текст джерела"Emerging wide-bandgap devices." In 2015 73rd Annual Device Research Conference (DRC). IEEE, 2015. http://dx.doi.org/10.1109/drc.2015.7175547.
Повний текст джерела"Wide-bandgap power devices." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548465.
Повний текст джерела"Energy and wide bandgap." In 2014 72nd Annual Device Research Conference (DRC). IEEE, 2014. http://dx.doi.org/10.1109/drc.2014.6872390.
Повний текст джерела"Power and wide bandgap." In 2015 73rd Annual Device Research Conference (DRC). IEEE, 2015. http://dx.doi.org/10.1109/drc.2015.7175533.
Повний текст джерела"Wide bandgap/high speed devices." In 2012 70th Annual Device Research Conference (DRC). IEEE, 2012. http://dx.doi.org/10.1109/drc.2012.6257057.
Повний текст джерелаЗвіти організацій з теми "Wide bandgap device"
Crawford, M. H., W. W. Chow, A. F. Wright, S. R. Lee, E. D. Jones, J. Han, and R. J. Shul. Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices. Office of Scientific and Technical Information (OSTI), April 1999. http://dx.doi.org/10.2172/5901.
Повний текст джерелаElhadj, S. Laser-Based Defect Reduction in Wide Bandgap Semiconductors Used in Radiation-Voltaics Devices: Radiation Hardening and Annealing. Office of Scientific and Technical Information (OSTI), October 2019. http://dx.doi.org/10.2172/1571731.
Повний текст джерела