Добірка наукової літератури з теми "Wide-band Input Matching"
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Статті в журналах з теми "Wide-band Input Matching"
Huang, Zhe-Yang, Chun-Chieh Chen, and Chung-Chih Hung. "Low-noise amplifier with narrow-band and wide-band input impedance matching design." Journal of the Chinese Institute of Engineers 38, no. 5 (February 25, 2015): 603–9. http://dx.doi.org/10.1080/02533839.2015.1010452.
Повний текст джерелаGalante-Sempere, David, Javier del Pino, Sunil Lalchand Khemchandani, and Hugo García-Vázquez. "Miniature Wide-Band Noise-Canceling CMOS LNA." Sensors 22, no. 14 (July 13, 2022): 5246. http://dx.doi.org/10.3390/s22145246.
Повний текст джерелаBEN AMOR, MERIAM, MOURAD LOULOU, SEBASTIEN QUINTANEL та DANIEL PASQUET. "A FULLY INTEGRATED MULTIBAND CMOS 0.35 μM LNA FOR IEEE802.16 STANDARD". Journal of Circuits, Systems and Computers 22, № 02 (лютий 2013): 1250088. http://dx.doi.org/10.1142/s0218126612500880.
Повний текст джерелаHu, Robert, and Mark S. C. Yang. "Investigation of Different Input-Matching Mechanisms Used in Wide-Band LNA Design." International Journal of Infrared and Millimeter Waves 26, no. 2 (February 2005): 221–45. http://dx.doi.org/10.1007/s10762-005-3002-4.
Повний текст джерелаSeethur, Rashmi, Siva Yellampalli, and Shreedhar H. K. "Design of Common Gate Current-Reuse Noise Cancellation UWB Low Noise Amplifier in 90nm CMOS." International Journal of Electronics, Communications, and Measurement Engineering 11, no. 1 (January 1, 2022): 1–14. http://dx.doi.org/10.4018/ijecme.312257.
Повний текст джерелаALAVI-RAD, HOSEIN, SOHEYL ZIABAKHSH, and MUSTAPHA C. E. YAGOUB. "A 1.2 V CMOS COMMON-GATE LOW NOISE AMPLIFIER FOR UWB WIRELESS COMMUNICATIONS." Journal of Circuits, Systems and Computers 22, no. 07 (August 2013): 1350052. http://dx.doi.org/10.1142/s0218126613500527.
Повний текст джерелаHeo, Bo-Ram, and Ickjin Kwon. "A Dual-Band Wide-Input-Range Adaptive CMOS RF–DC Converter for Ambient RF Energy Harvesting." Sensors 21, no. 22 (November 10, 2021): 7483. http://dx.doi.org/10.3390/s21227483.
Повний текст джерелаPINO, J. DEL, SUNIL L. KHEMCHANDANI, ROBERTO DÍAZ-ORTEGA, R. PULIDO, and H. GARCÍA-VÁZQUEZ. "ON-CHIP INDUCTORS OPTIMIZATION FOR ULTRA WIDE BAND LOW NOISE AMPLIFIERS." Journal of Circuits, Systems and Computers 20, no. 07 (November 2011): 1231–42. http://dx.doi.org/10.1142/s0218126611007852.
Повний текст джерелаBonenberger, Christopher M. A., and Klaus W. Kark. "A Broadband Impedance-Matching Method for Microstrip Patch Antennas Based on the Bode-Fano Theory." Frequenz 72, no. 7-8 (June 26, 2018): 373–80. http://dx.doi.org/10.1515/freq-2018-0037.
Повний текст джерелаHu, Shan Wen, Tao Chen, Huai Gao, Long Xing Shi, and G. P. Li. "An Advanced Traveling Wave Matching Network for DC-12GHz Variable Gain Amplifier Design." Applied Mechanics and Materials 321-324 (June 2013): 331–35. http://dx.doi.org/10.4028/www.scientific.net/amm.321-324.331.
Повний текст джерелаДисертації з теми "Wide-band Input Matching"
Lin, Ming-Dao, and 林明道. "A Novel Wide Band Low Noise Amplifier using Negative Resistance Input Matching for LTE Applications." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/15789984303620588983.
Повний текст джерела國立交通大學
電信工程研究所
102
In this thesis, a novel wide band low noise amplifier combined negative resistance with common gate structure for LTE applications are presented. The research focused on how to reduce the power consumption and noise figure, and using negative resistance to achieve the effect of input impedance matching. In the past, the design of low-noise amplifier used RLC feedback or lengthy inductance, capacitance in series and parallel to achieve broadband matching circuit at the input, however our circuit used fewer of components to increase the bandwidth. In our design, a common gate amplifier with negative resistance using the frequency independent of the transistor current is to replace the traditional architecture of passive inductor at input, and with the gm-boost technique to achieve low power and noise reduction effectively. The shunt peaking network at drain is drawn to further suppress the high-frequency noise and a low noise level is achieved. The proposed LNA is implemented by the TSMC 0.18-μm CMOS technology process, and measured by use of CIC instruments. The measured results are as follows: bandwidth of 0.5 ~ 3.7 GHz, input and output reflection loss are greater than -12 dB, the maximum power gain is 17.8 dB, the minimum noise figure is 3.3 dB, at 2.7 GHz, the P1dB gain compression point is -20 dBm, the IIP3 cut-off point is -10.3 dBm, the core circuit power consumption is 6.48 mW, and the overall layout area including the pads is 0.716 * 0.744 = 0.533 mm2.
Lenka, Manas Kumar. "Blocker-tolerant Receiver Design Suitable for Software-defined and Cognitive Radio Applications." Thesis, 2018. https://etd.iisc.ac.in/handle/2005/4127.
Повний текст джерелаDepartment of Electronics and Information Technology, Govt. of India.
Тези доповідей конференцій з теми "Wide-band Input Matching"
Lenka, Manas Kumar, Akash Agrawal, Vishal Khatri, and Gaurab Banerjee. "A Wide-Band Receiver Front-End with Programmable Frequency Selective Input Matching." In 2016 29th International Conference on VLSI Design and 2016 15th International Conference on Embedded Systems (VLSID). IEEE, 2016. http://dx.doi.org/10.1109/vlsid.2016.96.
Повний текст джерелаMubarak, Hamid, and Mustafa Makkawi. "Design and simulation of wide band input matching circuit for RF power transistor in VHF range." In 2017 International Conference on Communication, Control, Computing and Electronics Engineering (ICCCCEE). IEEE, 2017. http://dx.doi.org/10.1109/iccccee.2017.7866086.
Повний текст джерелаAn, Xin, Jens Wagner, and Frank Ellinger. "A 2:8 GHz to 12:8 GHz UWB LNA Using Transformer Wide-Band Input Matching for IR-UWB Radar Applications." In 2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS). IEEE, 2018. http://dx.doi.org/10.1109/mwscas.2018.8623869.
Повний текст джерела