Готові списки джерел за темами / Weak topological insulators

Добірка наукової літератури з теми "Weak topological insulators"

Автор: Grafiati
Опубліковано: 6 вересня 2023

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Статті в журналах з теми "Weak topological insulators"

1

Li, Bo-Wen, Xiao-Chen Sun, Cheng He, and Yan-Feng Chen. "Acoustic graphyne: A second-order real Chern topological insulator." Journal of Applied Physics 133, no. 8 (February 28, 2023): 085107. http://dx.doi.org/10.1063/5.0132983.

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Анотація:
Graphyne has recently attracted much attention since it is an important derivative of graphene with unique topological properties. Although graphyne is not a conventional topological insulator because of its weak spin–orbit coupling, it is a real Chern topological insulator with the higher-order topology. However, it lacks a realistic model. Here, we propose a schedule to realize acoustic graphyne. By introducing negative coupling to simulate the carbon–carbon triple bond, we realize the transition from trivial to higher-order topological phases, characterized by real Chern numbers. These topologically protected corner states are achieved in a finite-size sample, and the condition for their existence is discussed. Our research extends the concept of real Chern insulators and provides a platform for studying the topological properties of graphene-like structural compounds.
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2

Zhu, Qing-Li, Liang Hua, and Ji-Mei Shen. "Theoretical construction of weak topological crystalline insulators." International Journal of Modern Physics B 31, no. 20 (August 10, 2017): 1750136. http://dx.doi.org/10.1142/s0217979217501363.

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Inspired by the discovery of topological crystalline insulators (TCIs) in three-dimensional materials such as Pb[Formula: see text]Sn[Formula: see text]Se(Te), the classification of topological insulators has been extended to other discrete symmetry classes such as crystal point group symmetries. In this paper, we construct and study a simple model of weak TCIs, which will serve as a more viable project in the experimental probe for such new type of topological phases.
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3

Lang, Murong, Liang He, Xufeng Kou, Pramey Upadhyaya, Yabin Fan, Hao Chu, Ying Jiang, et al. "Competing Weak Localization and Weak Antilocalization in Ultrathin Topological Insulators." Nano Letters 13, no. 1 (December 7, 2012): 48–53. http://dx.doi.org/10.1021/nl303424n.

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4

Yang, Huanhuan, Lingling Song, Yunshan Cao, and Peng Yan. "Experimental Realization of Two-Dimensional Weak Topological Insulators." Nano Letters 22, no. 7 (March 30, 2022): 3125–32. http://dx.doi.org/10.1021/acs.nanolett.2c00555.

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5

Chang, Kai-Wei, Wei Ji, and Chao-Cheng Kaun. "Layer-separable and gap-tunable topological insulators." Physical Chemistry Chemical Physics 19, no. 5 (2017): 3932–36. http://dx.doi.org/10.1039/c6cp06932k.

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6

Jun, Jin-Hyeon, Jinsu Kim, Sang Hyun Ji, Sang-Eon Lee, Soo-Whan Kim, Sung Jung Joo, Kyoung-Min Kim, Ki-Seok Kim, and Myung-Hwa Jung. "Negative magnetoresistance in antiferromagnetic topological insulating phase of GdxBi2−xTe3−ySey." APL Materials 11, no. 2 (February 1, 2023): 021106. http://dx.doi.org/10.1063/5.0135811.

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Анотація:
Antiferromagnetic topological insulators have attracted great attention in the condensed matter physics owing to the fundamental interest in exotic quantum states and topological antiferromagnetic spintronics. Starting with the typical topological insulator of Bi2Te3, we introduced the magnetic order by substituting Gd at the Bi site and tuned the Fermi level by substituting Se at the Te site. That is, we prepared single crystals of Gd xBi2− xTe3− ySe y with various x (= 0.02 and 0.06) and y (= 0.1, 0.2, 0.5, 0.7, 1.0, and 1.5). The magnetic data revealed an antiferromagnetic order for x = 0.06, and the transport data manifested the charge neutral point at y = 0.7. Combining all these results together, the material with x = 0.06 and y = 0.7 is characterized as an antiferromagnetic topological insulator, where we observed exotic magnetotransport properties such as weak antilocalization and negative longitudinal magnetoresistance that are frequently analyzed as chiral anomalies in Weyl materials.
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7

Gracia-Abad, Rubén, Soraya Sangiao, Chiara Bigi, Sandeep Kumar Chaluvadi, Pasquale Orgiani, and José María De Teresa. "Omnipresence of Weak Antilocalization (WAL) in Bi2Se3 Thin Films: A Review on Its Origin." Nanomaterials 11, no. 5 (April 22, 2021): 1077. http://dx.doi.org/10.3390/nano11051077.

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Анотація:
Topological insulators are materials with time-reversal symmetric states of matter in which an insulating bulk is surrounded by protected Dirac-like edge or surface states. Among topological insulators, Bi2Se3 has attracted special attention due to its simple surface band structure and its relatively large band gap that should enhance the contribution of its surface to transport, which is usually masked by the appearance of defects. In order to avoid this difficulty, several features characteristic of topological insulators in the quantum regime, such as the weak-antilocalization effect, can be explored through magnetotransport experiments carried out on thin films of this material. Here, we review the existing literature on the magnetotransport properties of Bi2Se3 thin films, paying thorough attention to the weak-antilocalization effect, which is omnipresent no matter the film quality. We carefully follow the different situations found in reported experiments, from the most ideal situations, with a strong surface contribution, towards more realistic cases where the bulk contribution dominates. We have compared the transport data found in literature to shed light on the intrinsic properties of Bi2Se3, finding a clear relationship between the mobility and the phase coherence length of the films that could trigger further experiments on transport in topological systems.
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8

Takane, Yositake. "Landau Levels on a Surface of Weak Topological Insulators." Journal of the Physical Society of Japan 84, no. 8 (August 15, 2015): 084710. http://dx.doi.org/10.7566/jpsj.84.084710.

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9

Seiberg, Nathan, and Edward Witten. "Gapped boundary phases of topological insulators via weak coupling." Progress of Theoretical and Experimental Physics 2016, no. 12 (November 4, 2016): 12C101. http://dx.doi.org/10.1093/ptep/ptw083.

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10

Zhang, Min, Qiya Liu, Ligang Liu, and Tixian Zeng. "Proximity-Induced Magnetism in a Topological Insulator/Half-Metallic Ferromagnetic Thin Film Heterostructure." Coatings 12, no. 6 (May 31, 2022): 750. http://dx.doi.org/10.3390/coatings12060750.

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Анотація:
Topological insulator (TI) Bi2Se3 thin films were prepared on half-metallic ferromagnetic La0.7Sr0.3MnO3 thin film by magnetron sputtering, forming a TI/FM heterostructure. The conductivity of Bi2Se3was modified by La0.7Sr0.3MnO3 at high- and low-temperature regions via different mechanisms, which could be explained by the short-range interactions and long-range interaction between ferromagnetic insulator and Bi2Se3 due to the proximity effect. Magnetic and transport measurements prove that the ferromagnetic phase and extra magnetic moment are induced in Bi2Se3 films. The weak anti-localized (WAL) effect was suppressed in Bi2Se3 films, accounting for the magnetism of La0.7Sr0.3MnO3 layers. This work clarifies the special behavior in Bi2Se3/La0.7Sr0.3MnO3 heterojunctions, which provides an effective way to study the magnetic proximity effect of the ferromagnetic phase in topological insulators.
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Більше джерел

Дисертації з теми "Weak topological insulators"

1

Adroguer, Pierre. "Propriétés de transport électronique des isolants topologiques." Phd thesis, Ecole normale supérieure de lyon - ENS LYON, 2013. http://tel.archives-ouvertes.fr/tel-00832048.

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Анотація:
Les travaux présentés dans cette thèse ont pour objectif d'apporter à la physique mésoscopique un éclairage concernant la compréhension des propriétés de transport électroniques d'une classe de matériaux récemment découverts : les isolants topologiques.La première partie de ce manuscrit est une introduction aux isolants topologiques, mettant en partie l'accent sur leurs spécificités par rapport aux isolants "triviaux" : des états de bords hélicaux (dans le cas de l'effet Hall quantique de spin en 2 dimensions) ou de surface relativistes (pour les isolants topologiques tridimensionnels) robustes vis-à-vis du désordre.La deuxième partie propose une sonde de l'hélicité des états de bords de l'effet Hall quantique de spin en étudiant les propriétés remarquables de l'injection de paires de Cooper dans cette phase topologique.La troisième partie étudie la diffusion des états de surface des isolants topologiques tridimensionnels dans le régime cohérent de phase. L'étude de la diffusion, de la correction quantique à la conductance (antilocalisation faible) et de l'amplitude des fluctuations universelles de conductance de fermions de Dirac sans masse est présentée. Cette étude est aussi menée dans la cas d'états de surface dont la surface de Fermi présente la déformation hexagonale observée expérimentalement.
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2

Majhi, Kunjalata. "On the electrical transport of weak topological insulators and Weyl semimetals." Thesis, 2018. https://etd.iisc.ac.in/handle/2005/5484.

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Анотація:
Topological insulators have garnered enormous amount of attention owing to their unique topological properties. The surface states protected by the topology of the system hold limitless potentials including topological quantum computation. WTIs are one branch of this exotic field which is new to the family of the topological insulators. Initially, weak topological insulators (WTIs) are assumed to be a mere version of ordinary insulators recent reports claim the opposite. The WTIs are in fact much more robust than its counterpart strong topological insulators (STIs). Unfortunately, there are a few materials known to be as WTIs which implies the difficulty in finding this phase in real materials. Since WTIs are thought to be an adiabatic stack of 2D quantum spin Hall layers, many proposals came up with the idea of super lattice structures where a stack of a trivial insulator with a STI could possibly give rise to this most sought after phase. However many of them are still waiting to be experimentally verifi ed. In this regard, our work is a much relief that was needed. We have discovered a new WTI, which is easily cleavable. In this thesis, we are going to discuss about the newly discovered WTI, BiSe, more extensively
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3

Dey, Rik. "Perpendicular And Parallel Field Magnetoresistance In Molecular Beam Epitaxy Grown Bi2Te3." Thesis, 2014. http://hdl.handle.net/2152/26012.

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Анотація:
The topological insulator Bi2Te3 has been grown on Si(111)-(7 × 7) surface by molecular beam epitaxy. Reflection high energy electron diffraction, in situ scanning tunnelling microscopy, x-ray photoelectron spectroscopy and ex situ x-ray diffraction studies have been performed to analyze the quality of the growth. These analyses suggest a very good layer-by-layer epitaxial growth of Bi2Te3 on the atomically at Si surface. The magnetoresistance of the samples has been studied with magnetic field perpendicular and parallel to the sample surface, up to 9 T, over a temperature range of 2 K to 20 K. A sharp dip at low fields (0 T - 1 T) and near-linear behavior for high fields (> 4 T) have been observed in the perpendicular field magnetoresistance. The low field dip is due to weak antilocalization that agrees well with the simplified Hikami-Larkin-Nagaoka model. It has been demonstrated that both the low field dip and the high field near-linear behavior can be explained by the original Hikami-Larkin-Nagaoka formula alone in a system with strong spin-orbit coupling. From the fitting of the perpendicular field magnetoresistance the phase coherence length, the mean free path and the spin-orbit relaxation time have been estimated. The phase coherence length shows power law dependence with temperature indicating two dimensional nature of the transport. The power law also suggests electron electron interaction as the prominent dephasing mechanism. The out-of-plane spin-orbit relaxation time is determined to be small and the in-plane spin-orbit relaxation time is found to be comparable to the momentum relaxation time. The estimation of these charge and spin transport parameters is useful for topological insulator based magneto electric device applications. It also has been shown that the strong spin-orbit coupling suppresses the Zeeman contribution in perpendicular field magnetoresistance. The logarithmic divergence of perpendicular field magnetoresistance with temperature for low temperature range (2 K - 20 K) at high fields shows the presence of Coulomb interaction in the spin singlet channel. For magnetoresistance with the field parallel to the sample surface, the observed magnetoresistance has parabolic dependence for small fields (0 T - 0.6 T) and logarithmic dependence for large fields (> 3 T), which is due to the Zeeman effect. It is found that the data are inconsistent with only the Maekawa and Fukuyama theory of non interacting electrons with Zeeman contributions to the transport, but are consistent with theory if one also takes into account the electron electron interaction and the Zeeman splitting term in the electron electron interaction theory of Lee and Ramakrishnan. The Zeeman g-factor and the strength of Coulomb scattering due to electron electron interaction have been estimated from fitting of the parallel field magnetoresistance. The magnetoresistance also shows anisotropy with respect to the field directions. The angle dependent anisotropic magnetoresistance can be fitted well by the original HLN theory alone. The anisotropy can have potential application in anisotropic magnetic sensors.
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Книги з теми "Weak topological insulators"

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Pauly, Christian. Strong and Weak Topology Probed by Surface Science: Topological Insulator Properties of Phase Change Alloys and Heavy Metal Graphene. Springer London, Limited, 2016.

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2

Pauly, Christian. Strong and Weak Topology Probed by Surface Science: Topological Insulator Properties of Phase Change Alloys and Heavy Metal Graphene. Spektrum Akademischer Verlag GmbH, 2016.

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Частини книг з теми "Weak topological insulators"

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He, Hongtao, and Jiannong Wang. "Weak Antilocalization Effect, Quantum Oscillation, and Superconducting Proximity Effect in 3D Topological Insulators." In Topological Insulators, 331–55. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2015. http://dx.doi.org/10.1002/9783527681594.ch13.

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Pauly, Christian. "Fundamentals of Topological Insulators." In Strong and Weak Topology Probed by Surface Science, 5–40. Wiesbaden: Springer Fachmedien Wiesbaden, 2015. http://dx.doi.org/10.1007/978-3-658-11811-2_2.

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3

Pauly, Christian. "Identification of Tellurium based Phase-Change Materials as Strong Topological Insulators." In Strong and Weak Topology Probed by Surface Science, 59–103. Wiesbaden: Springer Fachmedien Wiesbaden, 2015. http://dx.doi.org/10.1007/978-3-658-11811-2_4.

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Pauly, Christian. "Weak Topological Insulator." In Strong and Weak Topology Probed by Surface Science, 105–42. Wiesbaden: Springer Fachmedien Wiesbaden, 2015. http://dx.doi.org/10.1007/978-3-658-11811-2_5.

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5

Muntyanu, Fiodor M., Andrzej Gilewski, Andrzej J. Zaleski, Vitalie Chistol, Viorel Munteanu, Krzysztof Rogacki, and Anatolie Sidorenko. "Quantum Transport, Superconductivity, and Weak Ferromagnetism at Bicrystal Interfaces of Bi and 3D Topological Insulator BiSb." In NanoScience and Technology, 247–63. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-90481-8_12.

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6

Pradhan, Sunil Kumar, and Ranjan Barik. "Observation of the Weak Antilocalization and Linear Magnetoresistance in Topological Insulator Thin Film Hall Bar Device." In Heterojunctions and Nanostructures. InTech, 2018. http://dx.doi.org/10.5772/intechopen.76900.

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Тези доповідей конференцій з теми "Weak topological insulators"

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Lu, Hai-Zhou, and Shun-Qing Shen. "Weak localization and weak anti-localization in topological insulators." In SPIE NanoScience + Engineering, edited by Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2014. http://dx.doi.org/10.1117/12.2063426.

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Culcer, Dimitrie, Weizhe Liu, Pierre Adroguer, Xintao Bi, and Ewelina Hankiewicz. "Weak antilocalisation in topological insulators with strong spin-orbit scattering (presentation video)." In SPIE NanoScience + Engineering, edited by Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2014. http://dx.doi.org/10.1117/12.2063515.

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Urkude, Rajashri, Rajeev Rawat, and Umesh Palikundwar. "Surface quantum oscillations and weak antilocalization effect in topological insulator (Bi0.3Sb0.7)2Te3." In DAE SOLID STATE PHYSICS SYMPOSIUM 2017. Author(s), 2018. http://dx.doi.org/10.1063/1.5029008.

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Lin, Qian, Xiaoqi Sun, Meng Xiao, and Shanhui Fan. "Lattice dislocation in a photonic weak topological insulator with a synthetic frequency dimension." In Frontiers in Optics. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/fio.2017.fw2a.2.

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Takeshige, Yuusuke, Sadashige Matsuo, Russell Stewart Deacon, Kento Ueda, Yosuke Sato, Yi-Fan Zhao, Ling Zhang, Cui-Zu Chang, Koji Ishibashi, and Seigo Tarucha. "Observation of a.c. Josephson effect in gate tunable Josephson junction on topological insulator (Bi0.2Sb0.8)2 Te3 films." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819243.

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Rogachova, Olena, Anna Doroshenko, Olga Nashchekina, and Georgiy Lisachuk. "Temperature Dependences of the Galvanomagnetic Properties of $p-\text{Bi}_{2}\text{Te}_{3}$ Thermoelectric and Topological Insulator with Selenium Impurity." In 2022 IEEE 3rd KhPI Week on Advanced Technology (KhPIWeek). IEEE, 2022. http://dx.doi.org/10.1109/khpiweek57572.2022.9916444.

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