Статті в журналах: "Weak localization scattering"

1

Stephen, Michael J. "Rayleigh Scattering and Weak Localization." Physical Review Letters 56, no. 17 (April 28, 1986): 1809–10. http://dx.doi.org/10.1103/physrevlett.56.1809.

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2

Rhie, K., and D. G. Naugle. "Strong magnetic scattering in weak localization." IEEE Transactions on Magnetics 32, no. 5 (1996): 4666–68. http://dx.doi.org/10.1109/20.539112.

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3

van der Mark, Martin B., Meint P. van Albada, and Ad Lagendijk. "Light scattering in strongly scattering media: Multiple scattering and weak localization." Physical Review B 37, no. 7 (March 1, 1988): 3575–92. http://dx.doi.org/10.1103/physrevb.37.3575.

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4

Horsell, D. W., F. V. Tikhonenko, R. V. Gorbachev, and A. K. Savchenko. "Weak localization in monolayer and bilayer graphene." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 366, no. 1863 (November 19, 2007): 245–50. http://dx.doi.org/10.1098/rsta.2007.2159.

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Анотація:

We demonstrate quantitative experimental evidence for a weak localization correction to the conductivity in monolayer and bilayer graphene systems. We show how inter- and intra-valley elastic scattering control the correction in small magnetic fields in a way which is unique to graphene. A clear difference in the forms of the correction is observed in the two systems, which shows the importance of the interplay between the elastic scattering mechanisms and how they can be distinguished. Our observation of the correction at zero-net carrier concentration in both systems is clear evidence of the inhomogeneity engendered into the graphene layers by disorder.

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5

YANG, Y. H. "MAGNETIC SCATTERING EFFECTS IN A QUASI-TWO-DIMENSIONAL DISORDERED ELECTRON SYSTEM." Modern Physics Letters B 14, no. 27n28 (December 10, 2000): 995–1000. http://dx.doi.org/10.1142/s0217984900001257.

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The weak-localization correction to the conductivity for a quasi-two-dimensional disordered electron system is calculated in the presence of magnetic impurity scatterings. The analytical result is obtained as a function of the magnetic scattering time, and the interesting magnetic-scattering-dependent crossover behavior from 3D to 2D is discussed.

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6

van der Mark, Martin B., Meint P. van Albada, and Ad Lagendijk. "Erratum: Light scattering in strongly scattering media: Multiple scattering and weak localization." Physical Review B 38, no. 7 (September 1, 1988): 5063. http://dx.doi.org/10.1103/physrevb.38.5063.

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7

Lu, J., B. Shen, N. J. Tang, D. J. Chen, and Y. D. Zheng. "Anti-Weak Localization of the Two Dimensional Electron Gas in Modulation-Doped Al_xGa_1-xN/GaN Single Quantum Well." Materials Science Forum 475-479 (January 2005): 1787–90. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1787.

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The weak-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single quantum well has been investigated through the magnetoresistance measurements. The elastic scattering time τε, dephasing time τφ and spin-orbit(s-o) scattering time τso at various temperatures are obtained. The fitting parameters indicate that the inelastic scatterings to the 2DEG are mainly due to the piezoelectric field and the alloy disorder in the AlxGa1-xN barrier. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the anti-weak localization is observed clearly, which is due to the strong spin-orbit interaction. The spin-orbit effect dominates the quantum correction of the conductivity in the upper subband. The intersubband scattering becomes stronger with increasing temperature.

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8

Maret, Georg, and Pierre Etienne Wolf. "Multiple Light Scattering: Weak Localization and Dynamic Fluctuations." Physica Scripta T29 (January 1, 1989): 223–25. http://dx.doi.org/10.1088/0031-8949/1989/t29/042.

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9

Kaveh, M., M. Rosenbluh, I. Edrei, and I. Freund. "Weak Localization and Light Scattering from Disordered Solids." Physical Review Letters 57, no. 16 (October 20, 1986): 2049–52. http://dx.doi.org/10.1103/physrevlett.57.2049.

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10

Stephen, Michael J., and Gabriel Cwilich. "Rayleigh scattering and weak localization: Effects of polarization." Physical Review B 34, no. 11 (December 1, 1986): 7564–72. http://dx.doi.org/10.1103/physrevb.34.7564.

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11

LAL, R., V. P. S. AWANA, K. P. SINGH, R. B. SAXENA, H. KISHAN, and A. V. NARLIKAR. "A COMPARISON OF THE RESISTIVITY BEHAVIOR OF MgB2, AlB2 AND AgB2 SYSTEMS." Modern Physics Letters B 20, no. 16 (July 20, 2006): 989–94. http://dx.doi.org/10.1142/s0217984906011116.

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Анотація:

Measurements have been performed on the resistivity of samples MgB 2, AlB 2 and AgB 2. The samples show presence of impurities. By analyzing the data in terms of impurity scattering, electron-phonon scattering, and weak localization, it has been found that the AlB 2 ( AgB 2) sample involves maximum (minimum) effect of the impurity, electron-phonon interaction and weak localization.

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12

Bergmann, Gerd. "WEAK LOCALIZATION AND ITS APPLICATIONS AS AN EXPERIMENTAL TOOL." International Journal of Modern Physics B 24, no. 12n13 (May 20, 2010): 2015–52. http://dx.doi.org/10.1142/s021797921006468x.

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Анотація:

The resistance of two-dimensional electron systems such as thin disordered films shows deviations from Boltzmann theory, which are caused by quantum corrections and are called weak localization. The theoretical origin of weak localization is the Langer–Neal graph in Kubo formalism. It represents an interference experiment with conduction electrons split into pairs of waves interfering in the back-scattering direction. The intensity of the interference (integrated over the time) can easily be measured by the resistance of the film. The application of a magnetic field B destroys the phase coherence after a time which is proportional to 1/B. For a field of 1 T this time is of the order of 1 ps. Therefore with a dc experiment, one can measure characteristic times of the electron system in the range of picoseconds. Weak localization has been applied to measure dephasing, spin-orbit scattering, tunneling times, etc. One important field of application is the investigation of magnetic systems and magnetic impurities by measuring the magnetic dephasing time and its temperature dependence. Here the Kondo maximum of spin-flip scattering, spin-fluctuations, Fermi liquid behavior and magnetic d-resonances have been investigated. Another field is the detection of magnetic moments for very dilute alloys and surface impurities. This article given a brief survey of different applications of weak localization with a focus on magnetic impurities.

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13

Bayer, G., and T. Niederdränk. "Weak localization of acoustic waves in strongly scattering media." Physical Review Letters 70, no. 25 (June 21, 1993): 3884–87. http://dx.doi.org/10.1103/physrevlett.70.3884.

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14

Cwilich, Gabriel, and Michael J. Stephen. "Rayleigh scattering and weak localization: Geometric effects and fluctuations." Physical Review B 35, no. 13 (May 1, 1987): 6517–20. http://dx.doi.org/10.1103/physrevb.35.6517.

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15

Wei, Wei, Ralph Rosenbaum, and Gerd Bergmann. "Magnetic scattering in AuCo and AgCo with weak localization." Physical Review B 39, no. 7 (March 1, 1989): 4568–71. http://dx.doi.org/10.1103/physrevb.39.4568.

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16

Ito, Hiroshi, Motoki Matsuno, Seiu Katagiri, Shinji K. Yoshina, Taishi Takenobu, Manabu Ishikawa, Akihiro Otsuka, et al. "Metallic Conduction and Carrier Localization in Two-Dimensional BEDO-TTF Charge-Transfer Solid Crystals." Crystals 12, no. 1 (December 24, 2021): 23. http://dx.doi.org/10.3390/cryst12010023.

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Charge-transfer salts based on bis(ethylenedioxy)tetrathiafulvalene (BEDO-TTF or BO for short) provide a stable two-dimensional (2D) metallic state, while the electrical resistance often shows an upturn at low temperatures below ~10 K. Such 2D weak carrier localization was first recognized for BO salts in the Langmuir–Blodgett films fabricated with fatty acids; however, it has not been characterized in charge-transfer solid crystals. In this paper, we discuss the carrier localization of two crystalline BO charge-transfer salts with or without magnetic ions at low temperatures through the analysis of the weak negative magnetoresistance. The phase coherence lengths deduced with temperature dependence are largely dominated by the electron–electron scattering mechanism. These results indicate that the resistivity upturn at low temperatures is caused by the 2D weak localization. Disorders causing elastic scattering within the metallic domains, such as those of terminal ethylene groups, should be suppressed to prevent the localization.

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17

Amaral, V. S. "On the contribution of magnetic scattering to weak localization magnetoresistance." Journal of Physics: Condensed Matter 2, no. 41 (October 15, 1990): 8201–4. http://dx.doi.org/10.1088/0953-8984/2/41/008.

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18

Yoo, K. M., Y. Takiguchi, and R. R. Alfano. "Weak localization of photons: contributions from the different scattering pathlengths." IEEE Photonics Technology Letters 1, no. 4 (April 1989): 94–96. http://dx.doi.org/10.1109/68.87914.

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19

Lee, Jin Seok, and Sungbae Lee. "Weak Localization in Bilayer Graphene: Enhanced Scattering near Dirac Point." Journal of the Korean Physical Society 76, no. 3 (February 2020): 247–50. http://dx.doi.org/10.3938/jkps.76.247.

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20

Marengo, Edwin A., Maytee Zambrano-Nunez, and Paul Berestesky. "Cramér-Rao Bound Study of Multiple Scattering Effects in Target Localization." International Journal of Antennas and Propagation 2012 (2012): 1–13. http://dx.doi.org/10.1155/2012/390312.

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Анотація:

The target position information contained in scattering data is explored in the context of the scalar Helmholtz operator for the basic two-point scatterer system by means of the statistical estimation framework of the Fisher information and associated Cramér-Rao bound (CRB) relevant to unbiased position estimation. The CRB results are derived for the exact multiple scattering model and, for reference, also for the single scattering or first Born approximation model applicable to weak scatterers. The roles of the sensing configuration and the scattering parameters in target localization are analyzed. Blind spot conditions under which target localization is impossible are derived and discussed for both models. It is shown that the sets of sensing configuration and scattering parameters for which localization is impeded are different but equivalent (they have the same size) under the exact multiple scattering model and the Born approximation. Conditions for multiple scattering to be useful or detrimental to localization are derived.

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21

Pompe, Ruben C. R., Dominic T. Meiers, Walter Pfeiffer, and Georg von Freymann. "Weak Localization Enhanced Ultrathin Scattering Media (Advanced Optical Materials 18/2022)." Advanced Optical Materials 10, no. 18 (September 2022): 2270070. http://dx.doi.org/10.1002/adom.202270070.

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22

Jonckheere, Thibaut, Cord A. Müller, Robin Kaiser, Christian Miniatura, and Dominique Delande. "Multiple Scattering of Light by Atoms in the Weak Localization Regime." Physical Review Letters 85, no. 20 (November 13, 2000): 4269–72. http://dx.doi.org/10.1103/physrevlett.85.4269.

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23

Lin, J., and N. Giordano. "Electron scattering times from weak localization studies of Au-Pd films." Physical Review B 35, no. 3 (January 1987): 1071–75. http://dx.doi.org/10.1103/physrevb.35.1071.

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24

Beenakker, C. W. J., and H. van Houten. "Boundary scattering and weak localization of electrons in a magnetic field." Physical Review B 38, no. 5 (August 15, 1988): 3232–40. http://dx.doi.org/10.1103/physrevb.38.3232.

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25

Litinskaia, M. L., V. M. Agranovich, and G. C. La Rocca. "Elastic Scattering of Polaritons in High Quality Microcavities and Weak Localization." physica status solidi (a) 190, no. 2 (April 2002): 395–400. http://dx.doi.org/10.1002/1521-396x(200204)190:2<395::aid-pssa395>3.0.co;2-4.

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26

AVERKIEV, NIKITA S., and KONSTANTIN S. ROMANOV. "2D ANOMALOUS MAGNETORESISTANCE IN THE PRESENCE OF SPIN–ORBIT SCATTERING." International Journal of Nanoscience 06, no. 03n04 (June 2007): 187–89. http://dx.doi.org/10.1142/s0219581x07004559.

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The model of weak localization in 2D semiconductor structures in the whole range of classically weak magnetic fields in the presence of the Elliot–Yafet spin relaxation has been developed. It was shown that the spin–orbit interaction influences the value of magnetoresistance in small magnetic fields (within diffusion approximation) and when diffusion approximation is no longer valid.

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27

Peres, M. L., V. A. Chitta, G. M. Gusev, Nei F. Oliveira, P. H. O. Rappl, A. Y. Ueta, and E. Abramof. "WEAK-LOCALIZATION IN n- AND p-TYPE FILMS OF Pb1-xEuxTe." International Journal of Modern Physics B 21, no. 08n09 (April 10, 2007): 1519–23. http://dx.doi.org/10.1142/s0217979207043129.

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We investigated the magnetotransport properties of n- and p-type films of Pb 1-x Eu x Te grown by molecular beam epitaxy, with Eu concentrations close to the Metal-Insulator transition. The n-type sample shows a negative magnetoresistance which magnitude increases continually as the temperature is lowered. On the other hand, for the p-type sample, a negative magnetoresistance can be observed only for temperatures below 7 K. Comparing the magnetoresistance of both samples we show that the scattering mechanism should have a different origin.

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28

Paramanik, Tapas, and I. Das. "Resistivity minima in the disordered cluster glass intermetallic compound Dy5Pd2: influence of quantum interference effects." RSC Advances 5, no. 96 (2015): 78406–13. http://dx.doi.org/10.1039/c5ra14515e.

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A resistance minimum in the temperature dependence of Dy₅Pd₂ has been interpreted in terms of contributions from magnetic and phonon scattering, electron–electron interactions and weak localization.

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29

Kanzieper, E. A. "Destruction of weak localization in inelastic scattering of particles in disordered media." Physica Scripta 47, no. 6 (June 1, 1993): 823–25. http://dx.doi.org/10.1088/0031-8949/47/6/025.

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30

Van Houten, H., C. W. J. Beenakker, B. J. Van Wees, and J. E. Mooij. "Boundary scattering modified one-dimensional weak localization in submicron GaAs/AlGaAs heterostructures." Surface Science 196, no. 1-3 (January 1988): 144–49. http://dx.doi.org/10.1016/0039-6028(88)90677-2.

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31

Sugiyama, Tadao, and Hanoch Gutfreund. "Effects of forward scattering and incommensurate lattice in 1-D weak localization." Physica B+C 143, no. 1-3 (November 1986): 224–26. http://dx.doi.org/10.1016/0378-4363(86)90102-6.

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32

CLAYS, KOEN, KURT WOSTYN, YUXIA ZHAO, and ANDRÉ PERSOONS. "ALTERNATIVE EXPERIMENTAL DETERMINATION OF WEAK LOCALIZATION OF LIGHT IN NANOSTRUCTURED MATERIALS." Journal of Nonlinear Optical Physics & Materials 11, no. 03 (September 2002): 261–74. http://dx.doi.org/10.1142/s0218863502001012.

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An alternative experimental technique for the determination of weak localization of light in partially ordered nanostructured materials is proposed. The technique is based on the criterion for weak localization of light that the transport mean free path length of multiply scattered photons is reduced down to shorter than the wavelength of the light. This mean free path is calculated from the experimental dwell time of the photons in the scattering structure and by applying the photon random walk model using the diffusion approximation. The dwell time is experimentally determined by multifrequency phasefluorimetry. This technique is capable of providing corroborative intensity demodulation data that can be linked to the wavelength dependent transmission (optical bandgap) of colloidal crystals.

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33

Childres, Isaac, Yaping Qi, Mohammad A. Sadi, John F. Ribeiro, Helin Cao, and Yong P. Chen. "Combined Raman Spectroscopy and Magneto-Transport Measurements in Disordered Graphene: Correlating Raman D Band and Weak Localization Features." Coatings 12, no. 8 (August 7, 2022): 1137. http://dx.doi.org/10.3390/coatings12081137.

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Although previous studies have reported the Raman and weak localization properties of graphene separately, very few studies have examined the correlation between the Raman and weak localization characterizations of graphene. Here, we report a Raman spectroscopy and low-magnetic-field electronic transport study of graphene devices with a controlled amount of defects introduced into the graphene by exposure to electron-beam irradiation and oxygen plasma etching. The relationship between the defect correlation length (LD), calculated from the Raman “D” peak, and the characteristic scattering lengths, Lϕ, Li and L*, computed from the weak localization effects measured in magneto-transport was investigated. Furthermore, the effect on the mean free path length due to the increasing amounts of irradiation incident on the graphene device was examined. Both parameters—including LD and Lϕ—decreased with the increase of irradiation, which was shown to be related to the increase of disorder through the concomitant decrease in the mean free path length, l. Although these are similar trends that have been observed separately in previous reports, this work revealed a novel nonlinear relationship between LD and Lϕ, particularly at lower levels of disorder. These findings are valuable for understanding the correlation between disorder in graphene and the phase coherence and scattering lengths of its charge carriers.

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34

Orlenko, Elena V., and Fedor E. Orlenko. "Permutation Symmetry in Coherent Electrons Scattering by Disordered Media." Symmetry 12, no. 12 (November 28, 2020): 1971. http://dx.doi.org/10.3390/sym12121971.

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A non-Anderson weak localization of an electron beam scattered from disordered matter is considered with respect to the principle of electron indistinguishability. A weak localization of electrons of a new type is essentially associated with inelastic processing. The origin of inelasticity is not essential. We take into account the identity principle for electron beam and electrons of the atom of the scatterer with an open shell. In spite of isotropic scattering by each individual scatterer, the electron exchange contribution has a hidden parameters effect on the resulting angular dependence of the scattering cross-section. In this case, the electrons of the open shell of an atomic scatterer can be in the s-state, that is, the atomic shell remains spherically symmetric. The methods of an invariant time-dependent exchange perturbation theory and a Green functions with exchange were applied. An additional angular dependence of the scattering cross-section appears during the coherent scattering process. It is shown exactly for the helium scatterer that the role of exchange effects in the case of a singlet is negligible, while for the triplet state, it is decisive, especially for those values of the energy of incident electrons when de Broglie’s waves are commensurate with the atomic.

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35

BENDING, S. J., K. VON KLITZING, and K. PLOOG. "WEAK LOCALIZATION AS A PROBE FOR AN INHOMOGENEOUS MAGNETIC FIELD DISTRIBUTION." Modern Physics Letters B 05, no. 05 (February 28, 1991): 323–30. http://dx.doi.org/10.1142/s0217984991000381.

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Type II superconducting films have been prepared on top of the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. In an applied magnetic field the inhomogeneous flux distribution at the superconductor is projected down onto the electron gas. At low applied fields the distribution at the 2DEG takes the form of flux tubes which are much narrower than an electron inelastic scattering length. In this regime we observe a qualitatively new weak localization magnetoconductivity proportional to |B| in contrast to the B2 homogeneous result and in semi-quantitative agreement with the theory of Rammer et al.1 We further demonstrate that the 2DEG can be used as a probe of the spatial distribution of an inhomogeneous magnetic field

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36

Bergmann, Gerd, and Christel Horriar-Esser. "Spin-orbit scattering in thin films and on surfaces measured by weak localization." Physical Review B 31, no. 2 (January 15, 1985): 1161–63. http://dx.doi.org/10.1103/physrevb.31.1161.

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37

Sapienza, Riccardo, Diederik S. Wiersma, and Dominique Delande. "Anisotropic Weak Localization of Light: From Isotropic Scattering to Ordered Nematic Liquid Crystals." Molecular Crystals and Liquid Crystals 429, no. 1 (May 2005): 193–212. http://dx.doi.org/10.1080/15421400590930935.

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38

Zou, C. Y., Lai Sen Wang, Xiang Liu, Q. F. Zhang, Jun Bao Wang, Zhi Ling Huang, Xiong Zhi Wang, Qing Luo, and Dong Liang Peng. "Anomalous Hall Effect of the Co Thin Film Deposited by High-Pressure Magnetron Sputtering." Advanced Materials Research 1120-1121 (July 2015): 424–28. http://dx.doi.org/10.4028/www.scientific.net/amr.1120-1121.424.

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In this paper, we studied the dependence of temperature and weak localization (WL) effect on the anomalous Hall effect (AHE) in strong disordered and poorly crystallized metal Co thin film deposited by high-pressure magnetron sputtering. The temperature coefficients of resistivity is positive at high temperatures and becomes negative at low temperatures, which is the typical characteristic of weak localization effect in dirty metal regime due to the strong disorder. The saturation anomalous Hall resistivity (ρAxy) have no scaling relation between ρxy and ρxx in weak localization region with temperature below 50 K. In metal region, temperature ranged from 50 K to 300 K, the relation between ρAxy and ρxxis ρAxy=A+bρ2xx, which indicates that the AHE in this Co thin film is scattering-independence at high temperature. The results also shows that the WL effect have a significant impact on the AHE of the Co thin film at low temperature.

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39

QIU, SHI-YUE. "HALL EFFECT IN THIN FILMS WITH ROUGH SURFACE AND IMPURITY SCATTERING." Modern Physics Letters B 06, no. 22 (September 20, 1992): 1361–69. http://dx.doi.org/10.1142/s021798499200106x.

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The result of microscopic, quantum calculations of one-electron conductivities, σxx (ω) and σxy (ω), in thin films with rough surface and impurity scattering, is reported. Although electronic conductivities have logarithmic singularity at low frequency within the weak localization regime, no such singularity is found for the Hall constant just like in the strictly two-dimensional disordered systems.

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40

Singh, Mahima, Labanya Ghosh, Vinod K. Gangwar, Yogendra Kumar, Debarati Pal, P. Shahi, Shiv Kumar, Sudip Mukherjee, K. Shimada, and Sandip Chatterjee. "Correlation between changeover from weak antilocalization (WAL) to weak localization (WL) and positive to negative magnetoresistance in S-doped Bi_1.5Sb_0.5Te_1.3Se_1.7." Applied Physics Letters 121, no. 3 (July 18, 2022): 032403. http://dx.doi.org/10.1063/5.0094556.

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The magneto-transport and angle-resolved photoelectron spectroscopy (ARPES) of the S-doped Bi1.5Sb0.5Te1.3Se1.7 system have been investigated. Both the positive magnetoresistance (pMR) and negative magnetoresistance (nMR) under a perpendicular magnetic field as well as a changeover from weak antilocalization (WAL) to weak localization (WL) are observed. The interplay between pMR and nMR is elucidated in terms of the dephasing and spin–orbit scattering time scales. The topological surface state bands have been explored using ARPES.

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41

ALESHIN, A. N., T. J. KIM, D. S. SUH, Y. W. PARK, H. KANG, and W. KANG. "THE EFFECTS OF PRESSURE AND MAGNETIC FIELD ON THE CONDUCTIVITY OF FeCl4 DOPED POLYACETYLENE: THE INFLUENCE OF SCATTERING BY LOW-ENERGY EXCITATIONS." International Journal of Modern Physics B 16, no. 20n22 (August 30, 2002): 3097–100. http://dx.doi.org/10.1142/s0217979202013651.

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The effects of hydrostatic pressure and magnetic field on the conductivity of oriented polyacetylene films doped with FeCl 4- up to metallic state have been studied at T = 0.35-300 K. It was found that application of pressure up to 10 kBar increases the conductivity at 300 K by a factor of 1.3 and suppresses the resistivity minimum in ρ (T) at 270 - 280 K. At T < 2 K the temperature dependence of resistivity ρ (T) ~ ln T (at ambient pressure and at 10 kBar) which remains unaltered by a magnetic field up to 14 Tesla. Transverse magnetoresistance (MR) was found to be negative, linear and temperature independent at T < 2 K (at ambient and high pressure). We attribute the observed ρ (T) and MR behavior to weak localization accompanied by effect of electron dephasing time saturation due to scattering by two-level systems of a special type. More strong behavior of ρ (T) and MR at T > 2 K related to further suppression of weak localization due to scattering by low-energy excitations of a "glassy" type.

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42

Lindqvist, P., and G. Fritsch. "Magnetoresistance of amorphous Cu-Ti alloys: The spin-orbit scattering time within weak localization." Physical Review B 40, no. 8 (September 15, 1989): 5792–94. http://dx.doi.org/10.1103/physrevb.40.5792.

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43

Lindelof, P. E., J. Nørregaard, and J. Hanberg. "New Light on the Scattering Mechanisms in Si Inversion Layers by Weak Localization Experiments." Physica Scripta T14 (January 1, 1986): 17–26. http://dx.doi.org/10.1088/0031-8949/1986/t14/003.

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44

Amorim, Cleber A., Cleocir J. Dalmaschio, André L. R. Melzi, Edson R. Leite, and Adenilson J. Chiquito. "Weak localization and electron–electron scattering in fluorine-doped SnO2 random nanobelt thin films." Journal of Physics and Chemistry of Solids 75, no. 5 (May 2014): 583–87. http://dx.doi.org/10.1016/j.jpcs.2014.01.003.

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45

Song, Qiuheng, Hekuo Peng, Shufang Zhou, Pengwei Zhou, Qian Xiao, and Bo Jia. "A Novel Weak-Scattering Michelson Interferometer Based on PBS for Long-Distance Disturbance Localization." Journal of Lightwave Technology 38, no. 6 (March 15, 2020): 1543–49. http://dx.doi.org/10.1109/jlt.2019.2953134.

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46

Dorosinets, Vladimir A., and Victor A. Borisov. "Determination of microscopical parameters of heterogeneous carbon materials." Journal of the Belarusian State University. Physics, no. 3 (September 30, 2019): 61–67. http://dx.doi.org/10.33581/2520-2243-2019-3-61-67.

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Experimental studies of the temperature dependence of the resistance and magnetoresistance of the composite metal-carbon samples C(Co), which show the effect of weak localization, have been carried out. The magnetoresistance at a temperature T = 2.2 K is alternating, which is explained by the spin-orbit interaction. Analysis of the magnetoresistance curves made it possible to calculate the values of the parameters characterizing the phase loss time in inelastic scattering and the spin-orbit interaction time. For the parameter characterizing the elastic scattering time, the minimum value was estimated.

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47

MEI, CHIANG C., and MATTHEW J. HANCOCK. "Weakly nonlinear surface waves over a random seabed." Journal of Fluid Mechanics 475 (January 25, 2003): 247–68. http://dx.doi.org/10.1017/s002211200200280x.

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We study the effects of multiple scattering of slowly modulated water waves by a weakly random bathymetry. The combined effects of weak nonlinearity, dispersion and random irregularities are treated together to yield a nonlinear Schrödinger equation with a complex damping term. Implications for localization and side-band instability are discussed. Transmission and nonlinear evolution of a wave packet past a finite strip of disorder is examined.

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48

Vargas, L. M. B., K. Bolaños, M. J. da Silva, S. de Castro, M. L. Peres, and M. P. F. de Godoy. "Weak localization effect in Zn_1−xCd_xO/CdO heterostructures." Journal of Applied Physics 133, no. 2 (January 14, 2023): 025701. http://dx.doi.org/10.1063/5.0122729.

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We present a systematic investigation of the morphological and magnetotransport properties of Zn1− xCd xO/CdO heterostructures managing the electronic barrier by changing x values between [Formula: see text] and [Formula: see text]. From physical parameters such as roughness and crystallite size obtained through scanning electron microscopy and x-ray diffraction, we established a correlation between the disorder degree and the amplitude of the negative magnetoresistance as well as the nature of the dominating inelastic scattering mechanisms. The magnetoresistance measurements revealed a negative amplitude for all heterostructures, which clearly shows that the weak localization effect is observed in the low temperature range. Applying the three-dimensional weak localization theory (Kawabata 3D), we extract the phase coherence length, and a relatively large value (maximum reaches 135 nm at 4.2 K) is obtained for the Zn0.05Cd0.95O/CdO heterostructure.

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49

Egger, Sebastian, and Joachim Kerner. "Scattering properties of two singularly interacting particles on the half-line." Reviews in Mathematical Physics 29, no. 10 (November 2017): 1750032. http://dx.doi.org/10.1142/s0129055x17500325.

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We analyze scattering in a system of two (distinguishable) particles moving on the half-line [Formula: see text] under the influence of singular two-particle interactions. Most importantly, due to the spatial localization of the interactions, the two-body problem is of a non-separable nature. We will discuss the presence of embedded eigenvalues and using the obtained knowledge about the kernel of the resolvent, we prove a version of the limiting absorption principle. Furthermore, by an appropriate adaptation of the Lippmann–Schwinger approach, we are able to construct generalized eigenfunctions which consequently allow us to establish an explicit expression for the (on-shell) scattering amplitude. An approximation of the scattering amplitude in the weak-coupling limit is also derived.

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50

Ding, Jinjun, Xiaofei Yang, and Tao Zhu. "Localization Correction to Anomalous Hall Effect in the Perpendicular CoFeB Thin Films." SPIN 05, no. 04 (December 2015): 1540013. http://dx.doi.org/10.1142/s2010324715400135.

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In this paper, we reported an obvious weak localization (WL) effect in perpendicular CoFeB sandwiched by Ta and MgO layers. The WL correction to the anomalous Hall effect (AHE) arises when the sheet resistance is larger than 1.5[Formula: see text]k[Formula: see text]. Furthermore, it is found that the mechanism of AHE is strongly related to the characteristic of the granularity in the MgO/CoFeB/Ta thin films. Both skew scattering and side jump mechanisms will give comparable contribution in the high disorder regime.

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