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Автор: Grafiati
Опубліковано: 14 березня 2023

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Статті в журналах з теми "Waveguide-coupled photodetector"

1

Lu, Zi-Qing, Qin Han, Han Ye, Shuai Wang, Feng Xiao, and Fan Xiao. "Low dark current and high bandwidth evanescent wave coupled PIN photodetector array for 400 Gbit/s receiving system." Acta Physica Sinica 70, no. 20 (2021): 208501. http://dx.doi.org/10.7498/aps.70.20210781.

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Compared with surface and edge incident photodetectors, evanescent coupling photodetector (ECPD) has high bandwidth and high quantum efficiency, so it has a broad application prospect in the field of high-speed optical communication. The evanescent wave coupled photodetector is composed of a diluted waveguide, a single-mode ridge waveguide and a PIN photodiode. By directional evanescent wave coupling, the coupling efficiency of the incident light from the fiber to the absorption core of the photodetector is improved. In this paper, the structure design, experimental preparation and test results of an indium phosphorus based evanescent wave coupled photodetector array are introduced in detail. The test results show that the dark current of the evanescent wave coupled photodetector array is as low as 215 pA and 1.23 pA under –3 and 0 V bias, respectively. When the active area is 5 μm × 20 μm, the device still has a high responsivity of 0.5 A/W (without antireflection film). The high frequency performance of the detector is tested. The bandwidth of each detector is more than 25 GHz, and the total bandwidth is more than 400 GHz. Any optical device can be integrated. The detector array can be applied to the WDM receiving system of 400 Gbit/s and coherent receiving system of 200 Gbit/s.
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2

Taylor, R. B., P. E. Burrows, and S. R. Forrest. "An integrated, crystalline organic waveguide-coupled InGaAs photodetector." IEEE Photonics Technology Letters 9, no. 3 (March 1997): 365–67. http://dx.doi.org/10.1109/68.556075.

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3

Ly-Gagnon, Dany-Sebastien, Krishna C. Balram, Justin S. White, Pierre Wahl, Mark L. Brongersma, and David A. B. Miller. "Routing and photodetection in subwavelength plasmonic slot waveguides." Nanophotonics 1, no. 1 (July 1, 2012): 9–16. http://dx.doi.org/10.1515/nanoph-2012-0002.

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AbstractThe ability to manipulate light at deeply sub-wavelength scales opens a broad range of research possibilities and practical applications. In this paper, we go beyond recent demonstrations of active photonic devices coupled to planar plasmonic waveguides and demonstrate a photodetector linked to a two conductor metallic slot waveguide that supports a mode with a minute cross-sectional area of ∼λ2/100. We demonstrate propagation lengths of ∼10λ (at 850 nm), routing around 90° bends and integrated detection with a metal-semiconductor-metal (MSM) photodetector. We show polarization selective excitation of the slot mode and measure its propagation characteristics by studying the Fabry-Perot oscillations in the photocurrent spectra from the waveguide-coupled detector. Our results demonstrate the practicality of transferring one of the most successful microwave and RF waveguide technologies to the optical domain, opening up many opportunities in areas such as biosensing, information storage and communication.
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4

Hsu, Shih-Hsiang. "Reflectively Coupled Waveguide Photodetector for High Speed Optical Interconnection." Sensors 10, no. 12 (December 2, 2010): 10863–75. http://dx.doi.org/10.3390/s101210863.

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5

Ding, Yunhong, Zhao Cheng, Xiaolong Zhu, Kresten Yvind, Jianji Dong, Michael Galili, Hao Hu, N. Asger Mortensen, Sanshui Xiao, and Leif Katsuo Oxenløwe. "Ultra-compact integrated graphene plasmonic photodetector with bandwidth above 110 GHz." Nanophotonics 9, no. 2 (February 25, 2020): 317–25. http://dx.doi.org/10.1515/nanoph-2019-0167.

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AbstractGraphene-based photodetectors, taking advantage of the high carrier mobility and broadband absorption in graphene, have recently seen rapid development. However, their performance with respect to responsivity and bandwidth is still limited by the weak light-graphene interaction and large resistance-capacitance product. Here, we demonstrate a waveguide-coupled integrated graphene plasmonic photodetector on a silicon-on-insulator platform. Benefiting from plasmon-enhanced graphene-light interaction and subwavelength confinement of the optical energy, a small-footprint graphene-plasmonic photodetector is achieved working at the telecommunication window, with a large a bandwidth beyond 110 GHz and a high intrinsic responsivity of 360 mA/W. Attributed to the unique electronic band structure of graphene and its ultra-broadband absorption, operational wavelength range extending beyond mid-infrared, and possibly further, can be anticipated. Our results show that the combination of graphene with plasmonic devices has great potential to realize ultra-compact, high-speed optoelectronic devices for graphene-based optical interconnects.
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6

Li, Hongqiang, Sai Zhang, Zhen Zhang, Shasha Zuo, Shanshan Zhang, Yaqiang Sun, Ding Zhao, and Zanyun Zhang. "Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator." Nanomaterials 10, no. 9 (August 27, 2020): 1683. http://dx.doi.org/10.3390/nano10091683.

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We report a vertically coupled germanium (Ge) waveguide detector integrated on silicon-on-insulator waveguides and an optimized device structure through the analysis of the optical field distribution and absorption efficiency of the device. The photodetector we designed is manufactured by IMEC, and the tests show that the device has good performance. This study theoretically and experimentally explains the structure of Ge PIN and the effect of the photodetector (PD) waveguide parameters on the performance of the device. Simulation and optimization of waveguide detectors with different structures are carried out. The device’s structure, quantum efficiency, spectral response, response current, changes with incident light strength, and dark current of PIN-type Ge waveguide detector are calculated. The test results show that approximately 90% of the light is absorbed by a Ge waveguide with 20 μm Ge length and 500 nm Ge thickness. The quantum efficiency of the PD can reach 90.63%. Under the reverse bias of 1 V, 2 V and 3 V, the detector’s average responsiveness in C-band reached 1.02 A/W, 1.09 A/W and 1.16 A/W and the response time is 200 ns. The dark current is only 3.7 nA at the reverse bias voltage of −1 V. The proposed silicon-based Ge PIN PD is beneficial to the integration of the detector array for photonic integrated arrayed waveguide grating (AWG)-based fiber Bragg grating (FBG) interrogators.
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7

Liu, Shao-Qing, Xiao-Hong Yang, Yu Liu, Bin Li, and Qin Han. "Design and fabrication of a high-performance evanescently coupled waveguide photodetector." Chinese Physics B 22, no. 10 (October 2013): 108503. http://dx.doi.org/10.1088/1674-1056/22/10/108503.

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8

Fujikata, Junichi, Masataka Noguchi, Riku Katamawari, Kyosuke Inaba, Hideki Ono, Daisuke Shimura, Yosuke Onawa, Hiroki Yaegashi, and Yasuhiko Ishikawa. "High-performance Ge/Si electro-absorption optical modulator up to 85°C and its highly efficient photodetector operation." Optics Express 31, no. 6 (March 9, 2023): 10732. http://dx.doi.org/10.1364/oe.484380.

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Анотація:
We studied a high-speed Ge/Si electro-absorption optical modulator (EAM) evanescently coupled with a Si waveguide of a lateral p–n junction for a high-bandwidth optical interconnect over a wide range of temperatures from 25 °C to 85 °C. We demonstrated 56 Gbps high-speed operation at temperatures up to 85 °C. From the photoluminescence spectra, we confirmed that the bandgap energy dependence on temperature is relatively small, which is consistent with the shift in the operation wavelengths with increasing temperature for a Ge/Si EAM. We also demonstrated that the same device operates as a high-speed and high-efficiency Ge photodetector with the Franz-Keldysh (F-K) and avalanche-multiplication effects. These results demonstrate that the Ge/Si stacked structure is promising for both high-performance optical modulators and photodetectors integrated on Si platforms.
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9

Harris, Nicholas C., Tom Baehr-Jones, Andy Eu-Jin Lim, T. Y. Liow, G. Q. Lo, and Michael Hochberg. "Noise Characterization of a Waveguide-Coupled MSM Photodetector Exceeding Unity Quantum Efficiency." Journal of Lightwave Technology 31, no. 1 (January 2013): 23–27. http://dx.doi.org/10.1109/jlt.2012.2227940.

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10

Kapser, K., and P. P. Deimel. "Enhanced polarization‐dependent coupling between an optical waveguide and a laterally coupled photodetector." Journal of Applied Physics 70, no. 1 (July 1991): 13–16. http://dx.doi.org/10.1063/1.350327.

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Більше джерел

Дисертації з теми "Waveguide-coupled photodetector"

1

PALMIERI, ANDREA. "Multiphysics modelling of high-speed optoelectronic devices for silicon photonics platforms." Doctoral thesis, Politecnico di Torino, 2020. http://hdl.handle.net/11583/2849030.

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2

Geng, Zhen, and 耿震. "Monolithic Waveguide Coupled Microdisk Photodetectors based on InAs Quantum Dots." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/59590084482500367712.

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Анотація:
碩士
國立臺灣大學
光電工程學研究所
103
In this thesis, we demonstrate the monolithic waveguide coupled microdisk photodetector based on InAs quantum dots. By embedding InAs self-assembled quantum dots (QDs) in a GaAs-based microdisk cavity, a resonant-cavity-enhanced waveguide photodetector (PD) using monolithic processing is experimentally demonstrated around 1140 nm wavelength. The microdisk resonant cavity is a vertical PIN diode with three InAs/GaAs QD active layers. QD structures provide better performances such as ultra-low dark current, which contributes to high responsivity and signal-to-noise-ratio, in comparison with other active materials. Microdisk structures efficiently enhance the absorption of InAs QDs. In addition, their compact size makes it suitable for integrated optics. Furthermore, the wavelength selectivity of the disk resonant cavity also makes the PD preferable for wavelength-division multiplexing. Moreover, from our InAs quantum dots sample (DO3525), we have successfully demonstrated the selective area quantum dots intermixing by the IFVD technique using SiO2/TiO2 cladding layers. We expect to apply this method to our QD devices in the future.
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3

Chen, Wei-Ting, and 陳偉庭. "A Novel Self-aligned Microbonding Technique for Making Butt-Coupled Silicon Germanium Metal-Semiconductor-Metal Waveguide Photodetectors." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/88431076431001373805.

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Анотація:
碩士
國立清華大學
光電工程研究所
101
Monolithic integration of silicon and germanium devices is essential in state-of-the-art electronic and optoelectronic applications; for example, high speed photodetectors, high speed heterojunction bipolar transistors and so on, have been reported with superior performances. However, direct epitaxial growth of Ge on Si is critical due to the 4% lattice mismatch between Ge and Si. Moreover, to reduce the threading dislocation defects at the growth interface, high-temperature annealing or processing is required, challenging the integratibility with electronic devices. Furthermore, for some applications, the Ge structure should be integrated with Si devices on the same plane, which cause the process even critical. In this thesis, we develop a novel process using self-aligned microbonding technique in combination with rapid melt growth method, successfully demonstrating a Ge metal-semiconductor-metal photodetector butt-coupled to a Si waveguide. Compared with evanescently coupled Ge photodetectors, butt-coupling devices have been presented with large photo-responsivity and operation bandwidth. However, they are very difficult to be implemented by the conventional epitaxy process. Here, we design and fabricate this device by using our approach in a much simple way. The measured dark current is small about 0.29μA at 1310nm at -1V bias. The absorption efficiency is very high and the operation speed can be up to 25 GHz, if a contact barrier modulation technique is applied. This device potentially can be integrated with electronic devices and other photonic components, for an application of high-speed optical interconnects.
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Тези доповідей конференцій з теми "Waveguide-coupled photodetector"

1

Edelstein, Shahar, S. R. K. Chaitanya Indukuri, Noa Mazurski, and Uriel Levy. "Waveguide-Coupled Mid-IR Photodetector Based on Interlayer Excitons Absorption in a WS2/HfS2 Heterostructure." In CLEO: Science and Innovations. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_si.2022.sm3k.8.

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We demonstrate a waveguide-coupled mid-IR photodetector based on interlayer excitons in a WS2/HfS2 heterostructure. We measure broadband photodetection, with responsivity in the order of tens of µA/W with low losses to the waveguide mode.
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2

Tu, Zhijuan, Kaibo Liu, Huaxiang Yi, Runxi Zhou, Xingjun Wang, Zhiping Zhou, and Zhangyuan Chen. "A compact evanescently-coupled germanium PIN waveguide photodetector." In Photonics Asia, edited by Zhiping Zhou and Kazumi Wada. SPIE, 2012. http://dx.doi.org/10.1117/12.2001221.

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3

Raza, Abdul M., Guang W. Yuan, Charles K. Thangaraj, Thomas W. Chen, and Kevin L. Lear. "Waveguide-coupled CMOS photodetector for on-chip optical interconnects." In Optical Science and Technology, the SPIE 49th Annual Meeting, edited by Khan M. Iftekharuddin and Abdul Ahad S. Awwal. SPIE, 2004. http://dx.doi.org/10.1117/12.559875.

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4

Lee, Benjamin G., Alexander V. Rylyakov, Jonathan E. Proesel, Christian W. Baks, Renato Rimolo-Donadio, Clint L. Schow, Anand Ramaswamy, Jonathan E. Roth, Matt Jacob-Mitos, and Gregory A. Fish. "60-Gb/s Receiver Employing Heterogeneously Integrated Silicon Waveguide Coupled Photodetector." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/cleo_si.2013.cth5d.4.

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5

Soole, J. B. D., H. Schumacher, H. P. LeBlanc, R. Bhat, and M. A. Koza. "Monolithically integrated butt-coupled InGaAs metal–semiconductor–metal waveguide photodetector by selective area regrowth." In Integrated Photonics Research. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/ipr.1990.tua3.

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Photoreceivers integrated with a Final stage of guided-wave optical processing are envisaged for both coherent and multichannel WDM detection systems.1,2 Successful implementation requires photodetectors that are efficiently coupled to the waveguides. This may be achieved by forming the guide adjacent to the detector and butt-coupled light directly into the side of the absorption region.3,4 In this paper we report the fabrication of a fast, efficient butt-coupled interdigitated InGaAs metal–semiconductor-metal (MSM) Schottky barrier waveguide detector mono­lithically integrated with an InP/InGaAsP/InP waveguide.
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6

Ding, Qian, and Andreas Schenk. "Performance of Plasmonic Side-Coupled Waveguide Photodetector with Varying Schottky Barrier Height." In 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, 2021. http://dx.doi.org/10.1109/nusod52207.2021.9541438.

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7

Wang, Jun, Naidi Cui, Junbo Feng, Heng Zhao, Yang Hu, Guowei Cao, and Jin Guo. "High performance waveguide-coupled germanium p-i-n photodetector on doped silicon." In Seventh Symposium on Novel Photoelectronic Detection Technology and Application 2020, edited by Junhao Chu, Qifeng Yu, Huilin Jiang, and Junhong Su. SPIE, 2021. http://dx.doi.org/10.1117/12.2587396.

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8

Yang, Kai, Julian Cheng, K. M. Patel, T. J. Eustis, D. A. Louderback, X.-J. Jin, J. Schoengarth, C.-Y. Chao, M.-Y. Shih, and P. S. Guilfoyle. "Integrated Waveguide-Grating-Coupled VCSEL/Photodetector Arrays with High Coupled Power for Dense High-Speed Interconnects." In CLEO 2007. IEEE, 2007. http://dx.doi.org/10.1109/cleo.2007.4452992.

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9

Wang, Jun, Naidi Cui, Junbo Feng, Yang Hu, Guowei Cao, Heng Zhao, and Jin Guo. "Performance enhancement of waveguide-coupled Ge-on-Si photodetector with additional p-i-n junction." In Optoelectronic Devices and Integration IX, edited by Baojun Li, Changyuan Yu, Xuping Zhang, and Xinliang Zhang. SPIE, 2020. http://dx.doi.org/10.1117/12.2575429.

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10

Choe, Joong-Seon, Won-Seok Han, Young-Ho Ko, Duk Jun Kim, Seo-Young Lee, Young-Tak Han, Hyun-Do Jung, Chun Ju Youn, Jong-Hoi Kim та Yong-Hwan Kwon. "Waveguide Photodetector Designed to be Butt-Coupled with 2%-Δ Silica Planar Lightwave Circuit Devices". У Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/acpc.2015.asu2a.25.

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