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1
Das, Ujjwal K., Scott Morrison, and Arun Madan. "Deposition of microcrystalline silicon solar cells via the pulsed PECVD technique." Journal of Non-Crystalline Solids 299-302 (April 2002): 79–82. http://dx.doi.org/10.1016/s0022-3093(01)00945-0.
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Ahmed, Sk F., D. Banerjee, M. K. Mitra, and K. K. Chattopadhyay. "Visible photoluminescence from silicon-incorporated diamond like carbon films synthesized via direct current PECVD technique." Journal of Luminescence 131, no. 11 (November 2011): 2352–58. http://dx.doi.org/10.1016/j.jlumin.2011.05.015.
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Ameen, Sadia, Minwu Song, Don-Gyu Kim, Yu-Bin Im, Hyung-Kee Seo, Young Soon Kim, and Hyung-Shik Shin. "Iodine doped polyaniline thin film for heterostructure devices via PECVD technique: Morphological, structural, and electrical properties." Macromolecular Research 20, no. 1 (November 16, 2011): 30–36. http://dx.doi.org/10.1007/s13233-012-0009-2.
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Hahn, Giso, Martin Käs, and Bernhard Herzog. "Hydrogenation in Crystalline Silicon Materials for Photovoltaic Application." Solid State Phenomena 156-158 (October 2009): 343–49. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.343.
Повний текст джерелаАнотація:
In this contribution an overview of hydrogenation issues for (multi-)crystalline silicon material is given. Crystalline silicon material for photovoltaic application contains more defects than material used for other semiconductor device fabrication. Therefore passivation of bulk defects has to be performed to reach higher efficiencies and exploit the cost reduction potential of these materials. Especially minority charge carrier lifetimes of ribbon silicon can be drastically improved by hydrogenation in combination with a gettering step. Apart from bulk passivation atomic hydrogen plays an important role in surface passivation via dielectric layers. Performance of single dielectric layers or stack systems can be increased after a hydrogenation step. It is believed that hydrogen can passivate defects at the silicon/dielectric interface allowing for lower surface recombination velocities. In industrial application hydrogenation is performed via deposition of a hydrogen-rich PECVD SiNx layer followed by a belt furnace annealing step. Surface passivation for characterization of charge carrier bulk lifetime is often performed with the same technique, omitting the annealing step to avoid in-diffusion of hydrogen. It is shown that for some crystalline silicon materials even the PECVD SiNx deposition alone (without annealing step) can cause significant bulk defect passivation, which in this case causes an unwanted change of bulk lifetime.
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Zhang, Manchen, Ruzhi Wang, Zhen Shen, and Yuhang Ji. "Extended Gate Field Effect Transistor Using GaN/Si Hybrids Nanostructures for pH Sensor." Nano 12, no. 09 (September 2017): 1750114. http://dx.doi.org/10.1142/s1793292017501144.
Повний текст джерелаАнотація:
The pH sensor of an extended gate field effect transistor (EGFET) with gallium nitride/silicon hybrid nanostructure is fabricated and analyzed. Si nanowires (NWs) are fabricated via the Ag-assisted electroless etching technique and are then covered by GaN NWs through plasma-enhanced chemical vapor deposition (PECVD). The GaN nanostructure is synthesized by introducing gallium oxide (Ga2O3) and nitrogen (N2) for the growth of NWs. The GaN nanowires supply a larger surface area than that of the pristine Si NWs, where there is a better sensitivity for pH sensor. The GaN/Silicon hybrid sensors exhibit a sensitivity higher (50.4[Formula: see text]mV/pH) than that of pristine Si NWs sensors (41.2[Formula: see text]mV/pH). This GaN/Si hybrid pH sensor prepared by simple and low-cost method may be potentially applied for cheap biosensor devices.
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Anutgan, Tamila, Mustafa Anutgan, and İsmail Atilgan. "Transmission electron microscope imaging of plasma grown electroformed silicon nitride-based light emitting diode for direct examination of nanocrystallization." European Physical Journal Applied Physics 88, no. 3 (December 2019): 30102. http://dx.doi.org/10.1051/epjap/2020190298.
Повний текст джерелаАнотація:
We report for the first time a direct transmission electron microscope (TEM) imaging of a cross-section of a silicon nitride-based light emitting diode (LED), produced via a method patented by our research group. Grown by plasma enhanced chemical vapor deposition (PECVD) technique the LED structure (glass/Cr/p+-nc-Si:H/i-SiNx:H/n+-nc-Si:H/ITO) was then subjected to a high forward voltage stress for one time only, i.e. electroforming process. After electroforming the LED exhibited a boosted visible light emission and memory effect. To study the structural effect of the electroforming on the as-deposited LED the cross-section was extracted by focused ion beam (FIB) technique directly from the electroformed diode and thus prepared for TEM imaging. Since the electroforming process caused crystallization of ITO and its breakup in some parts of the diode surface, the FIB was conducted for the cross-section containing some regions with ITO layer and some without ITO. TEM examination revealed the nanocrystalline phase formation within the intrinsic layer (i-SiNx:H) caused by the electroforming process. The average size and distribution of Si nanocrystallites formed inside i-SiNx:H was determined. The Si nanocrystallization within i-SiNx:H was compared for the regions with and without ITO layer. The previously proposed model describing the changes taken place in the diode during electroforming process was reconsidered in the light of this TEM analysis.
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Xia, Xinyi, Chao-Ching Chiang, Sarathy K. Gopalakrishnan, Aniruddha V. Kulkarni, Fan Ren, Kirk J. Ziegler, and Josephine F. Esquivel-Upshaw. "Properties of SiCN Films Relevant to Dental Implant Applications." Materials 16, no. 15 (July 28, 2023): 5318. http://dx.doi.org/10.3390/ma16155318.
Повний текст джерелаАнотація:
The application of surface coatings is a popular technique to improve the performance of materials used for medical and dental implants. Ternary silicon carbon nitride (SiCN), obtained by introducing nitrogen into SiC, has attracted significant interest due to its potential advantages. This study investigated the properties of SiCN films deposited via PECVD for dental implant coatings. Chemical composition, optical, and tribological properties were analyzed by adjusting the gas flow rates of NH3, CH4, and SiH4. The results indicated that an increase in the NH3 flow rate led to higher deposition rates, scaling from 5.7 nm/min at an NH3 flow rate of 2 sccm to 7 nm/min at an NH3 flow rate of 8 sccm. Concurrently, the formation of N-Si bonds was observed. The films with a higher nitrogen content exhibited lower refractive indices, diminishing from 2.5 to 2.3 as the NH3 flow rate increased from 2 sccm to 8 sccm. The contact angle of SiCN films had minimal differences, while the corrosion rate was dependent on the pH of the environment. These findings contribute to a better understanding of the properties and potential applications of SiCN films for use in dental implants.
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Said, Noresah, Ying Siew Khoo, Woei Jye Lau, Mehmet Gürsoy, Mustafa Karaman, Teo Ming Ting, Ebrahim Abouzari-Lotf, and Ahmad Fauzi Ismail. "Rapid Surface Modification of Ultrafiltration Membranes for Enhanced Antifouling Properties." Membranes 10, no. 12 (December 7, 2020): 401. http://dx.doi.org/10.3390/membranes10120401.
Повний текст джерелаАнотація:
In this work, several ultrafiltration (UF) membranes with enhanced antifouling properties were fabricated using a rapid and green surface modification method that was based on the plasma-enhanced chemical vapor deposition (PECVD). Two types of hydrophilic monomers—acrylic acid (AA) and 2-hydroxyethyl methacrylate (HEMA) were, respectively, deposited on the surface of a commercial UF membrane and the effects of plasma deposition time (i.e., 15 s, 30 s, 60 s, and 90 s) on the surface properties of the membrane were investigated. The modified membranes were then subjected to filtration using 2000 mg/L pepsin and bovine serum albumin (BSA) solutions as feed. Microscopic and spectroscopic analyses confirmed the successful deposition of AA and HEMA on the membrane surface and the decrease in water contact angle with increasing plasma deposition time strongly indicated the increase in surface hydrophilicity due to the considerable enrichment of the hydrophilic segment of AA and HEMA on the membrane surface. However, a prolonged plasma deposition time (>15 s) should be avoided as it led to the formation of a thicker coating layer that significantly reduced the membrane pure water flux with no significant change in the solute rejection rate. Upon 15-s plasma deposition, the AA-modified membrane recorded the pepsin and BSA rejections of 83.9% and 97.5%, respectively, while the HEMA-modified membrane rejected at least 98.5% for both pepsin and BSA. Compared to the control membrane, the AA-modified and HEMA-modified membranes also showed a lower degree of flux decline and better flux recovery rate (>90%), suggesting that the membrane antifouling properties were improved and most of the fouling was reversible and could be removed via simple water cleaning process. We demonstrated in this work that the PECVD technique is a promising surface modification method that could be employed to rapidly improve membrane surface hydrophilicity (15 s) for the enhanced protein purification process without using any organic solvent during the plasma modification process.
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Vitiello, J., F. Piallat, and L. Bonnet. "Alternative deposition solution for cost reduction of TSV integration." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000135–39. http://dx.doi.org/10.4071/isom-2017-tp52_034.
Повний текст джерелаАнотація:
Abstract As one of the key enabler of 3D integration, Through Silicon Via (TSV) was widely investigated but not largely adopted in the advanced packaging industry. At the present time, TSV key films, i.e. isolation, barrier and Cu seed layers, are depending on (Plasma Enhanced) Chemical Vapor Deposition ((PE)CVD) and Physical Vapor Deposition (PVD) systems in high volume manufacturing. Those deposition methods are not able to answer actual TSV needs: thick and conformal layers. They have forced engineers to compensate with other TSV fabrication steps while degrading fabrication cost. The innovative Fast Atomic Sequential Technology (F.A.S.T.®), a unique combination of optimized CVD reactor with Atomic Layer Deposition (ALD) pulsing capability, has been extensively evaluated to answer the thick and conformal layer request of TSV integration scheme while reducing integration cost. Based on commercially available molecules, actual isolation, copper barrier and Cu seed materials can be layered with advantageous conformality in TSV with aspect ratio up to 20:1. Furthermore, extended process window is at reach with the technique, thanks to additional parameters enabling fine tuning of the layer's properties to fit actual needs and future requirements. Assisted by plasma to deposit SiO2 liner, and TiN copper barrier, or combined with reducing gas for Cu seed deposition, highly conformal films compared to PVD or PECVD can be obtained while offering deposition rate much higher than PEALD. Additionally, a unique in-situ cleaning capability was also developed to remove deposition material from the reactor walls in the Cu Seed deposition chamber, thus answering the requirements of high volume manufacturing players.
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Bruno, P., G. Cicala, A. M. Losacco, and P. Decuzzi. "Mechanical properties of PECVD hydrogenated amorphous carbon coatings via nanoindentation and nanoscratching techniques." Surface and Coatings Technology 180-181 (March 2004): 259–64. http://dx.doi.org/10.1016/j.surfcoat.2003.10.035.
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Ren, Youliang, Junsong Yang, Chien-Min Chen, Kaixuan Liu, Xiang-Fu Wang, Jian-Min Wei, Lei Shi, et al. "Outcomes of Discectomy by Using Full-Endoscopic Visualization Technique via the Transcorporeal and Transdiscal Approaches in the Treatment of Cervical Intervertebral Disc Herniation: A Comparative Study." BioMed Research International 2020 (May 30, 2020): 1–7. http://dx.doi.org/10.1155/2020/5613459.
Повний текст джерелаАнотація:
Objective. To compare the difference in clinical and radiographic outcomes between anterior transcorporeal and transdiscal percutaneous endoscopic cervical discectomy (ATc-PECD/ATd-PECD) approaches for treating patients with cervical intervertebral disc herniation (CIVDH). Method. We selected 77 patients with single-segment CIVDH and received ATc-PECD or ATd-PECD in the Second Affiliated Hospital of Chongqing Medical University between March 1, 2010, and July 1, 2015. 35 patients suffered from ATc-PECD, and there were 42 patients in the ATd-PECD group. Obtaining the data of 1, 3, 6, 12, and 24 months postoperatively, the VAS for neck and arm pain and the modified MacNab criteria were used to evaluate the clinical outcomes, comparing radiographic outcomes and complications of these two groups. Results. We found that the mean operative time was significantly longer in the ATc-PECD group (P<0.05). At the 2-year follow-up, the mean VAS score for neck and arm pain was significantly decreased in both two groups. There was no significant difference in the VAS score for arm pain and neck pain between the two groups at the 2-year follow-up (P=0.783 and P=0.785, respectively). For the ATc-PECD group, the difference in the height of IVS or vertebral body was significant between the preoperative and postoperative groups (P<0.05, respectively). For the ATd-PECD group, there was only a significant decrease in the height of the IVS (P<0.05); the decrease in the surgical vertebral body was not significant between the preoperative and postoperative groups (P>0.05). Conclusion. In the 2-year follow-up, there is no significant difference in the clinical outcomes between the 2 approaches. While the longer time was consumed in the ATc-PECD group, the lower rate of disc collapse and recurrence is notable. Additionally, when the center diameter of tunnel was limited to 6 mm, the bony defect can be healed without the occurrence of the collapse of the superior endplate, and ATc-PECD may be preferable in the endoscopic treatment of CIVDH.
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Koybasi, Ozhan, Ørnulf Nordseth, Trinh Tran, Marco Povoli, Mauro Rajteri, Carlo Pepe, Eivind Bardalen, et al. "High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx." Sensors 21, no. 23 (November 24, 2021): 7807. http://dx.doi.org/10.3390/s21237807.
Повний текст джерелаАнотація:
We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO2 and plasma-enhanced chemical vapor deposited (PECVD) SiNx thin films that show a record high quantum efficiency. We investigated PECVD SiNx passivation and optimized the film deposition conditions to minimize the recombination losses at the silicon–dielectric interface as well as optical losses. Depositions with varied process parameters were carried out on test samples, followed by measurements of minority carrier lifetime, fixed charge density, and optical absorbance and reflectance. Subsequently, the surface recombination velocity, which is the limiting factor for internal quantum deficiency (IQD), was obtained for different film depositions via 2D simulations where the measured effective lifetime, fixed charge density, and substrate parameters were used as input. The quantum deficiency of induced-junction photodiodes that would be fabricated with a surface passivation of given characteristics was then estimated using improved 3D simulation models. A batch of induced-junction photodiodes was fabricated based on the passivation optimizations performed on test samples and predictions of simulations. Photodiodes passivated with PECVD SiNx film as well as with a stack of thermally grown SiO2 and PECVD SiNx films were fabricated. The photodiodes were assembled as light-trap detector with 7-reflections and their efficiency was tested with respect to a reference Predictable Quantum Efficient Detector (PQED) of known external quantum deficiency. The preliminary measurement results show that PQEDs based on our improved photodiodes passivated with stack of SiO2/SiNx have negligible quantum deficiencies with IQDs down to 1 ppm within 30 ppm measurement uncertainty.
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Bhattacharyya, Paramita, Brahim Ahammou, Fahmida Azmi, Rafael Kleiman, and Peter Mascher. "Design and Fabrication of Multiple-Color-Generating Thin-Film Optical Filters for Photovoltaic Applications." ECS Meeting Abstracts MA2022-01, no. 19 (July 7, 2022): 1064. http://dx.doi.org/10.1149/ma2022-01191064mtgabs.
Повний текст джерелаАнотація:
The use of electric vehicles (EVs) can reduce greenhouse gas emissions, air pollution, dependency on fossil fuels, and their adverse health effects on humans. But, we can only utilize the full environmental benefits of EVs when they are charged with renewable energy sources with zero or low carbon emissions. As a solution, Mobarak et al. [1] suggested integrating low-cost, flexible, and thin-film copper indium gallium selenide (CIGS) solar cells directly onto the steel of all the upward-facing body parts of the vehicles. But, this integration of solar cells comes with an aesthetic drawback. Previously, colorful photovoltaics (PVs) have been designed with one-dimensional (1D) photonic crystals or various 1D and 2D metallic nanostructures for aesthetic building-integrated photovoltaics (BIPVs) [2, 3]. However, the functionality of our application differs from that of BIPV as we need maximum absorption of the solar spectrum to obtain maximum conversion efficiency. Thus, we propose replacing the anti-reflective coating (ARC) present in the solar cells with a notch filter (a narrow high-reflection region in the visible range along with high transmission for the rest of the solar spectrum) to obtain colors. High-performance notch filters with a narrow and ultra-steep notch are well known in literature [4, 5]. Generally, high-performance notch filters are designed with a minimum of 45 layers. It is challenging to use filters with many layers on solar cells due to fabrication and thickness complexities. Thus, we created designs with a maximum of 27 layers for possible integration with photovoltaics. We used OptiLayer [6] to simulate our designs and the gradual evolution technique was used to optimize the designs. We performed our simulations with a multilayer structure of alternating high and low refractive indices of 2.09 and 1.45, respectively, on top of a silicon substrate. We optimized this multilayer structure for three reference wavelengths (400 nm, 550 nm, and 700 nm) resembling three colors. Our designs have notch widths of less than 100 nm for all the reference wavelengths with an average of 70% reflection in the high-reflection region and less than 20% reflection in the high-transmission area. To fabricate our designs, we need materials that are transparent to the solar spectrum targeted by the active material of the solar cells. The materials also need to have refractive indices closer to our simulation. Thus, we chose the combination of silicon nitride and silicon dioxide as our high and low refractive index material, respectively [7, 8]. To better understand our designs’ optical characteristics, we fabricated a scaled-down version of our structure with 5-10 layers. We used electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) to deposit the multilayer structure on silicon wafers. To obtain the silicon nitride and silicon dioxide layers, we used a SiH4/N2/O2/Ar precursor mixture. By tuning the gas flow rate in the reactor chamber, we tuned the stoichiometry and obtained the required refractive index for each layer. To characterize the refractive index and thickness for each layer, we used variable angle spectroscopic ellipsometry (VASE). We made a detailed comparison of our simulation and fabrication results. References [1] M. H. Mobarak, R. N. Kleiman, J. Bauman, Solar-charged electric vehicles: A comprehensive analysis of grid, driver, and environmental benefits, IEEE Transactions on Transportation Electrification 7 (2021) 579–603. doi:10.1109/TTE.2020.2996363. [2] G. Y. Yoo, et al., Multiple-color-generating cu(in,ga)(s,se)2 thin-film solar cells via dichroic film incorporation for power-generating window applications, ACS Applied Materials & Interfaces 9 (2017) 14817–14826. doi:10.1021/acsami.7b01416, pMID: 28406026. [3] K. T. Lee, et al., Colored dual-functional photovoltaic cells, Journal of Optics 18 (2016) 064003. [4] U. Schallenberg, et al., Design and manufacturing of high-performance notch filters, volume 7739, International Society for Optics and Photonics, SPIE, 2010, pp. 720 – 728. doi:10.1117/12.856580. [5] J. Zhang, et al., Design and fabrication of ultra-steep notch filters, Opt. Express 21 (2013) 21523–21529. doi:10.1364/OE.21.021523. [6] OptiLayer, 1994. URL: https://www.optilayer.com/support/faq, accessed: 2021-12-06. [7] A. Z. Subramanian, et al., Low-loss singlemode pecvd silicon nitride photonic wire waveguides for 532–900 nm wavelength window fabricated within a cmos pilot line, IEEE Photonics Journal 5 (2013) 2202809–2202809. doi:10.1109/JPHOT.2013.2292698. [8] W. D. Sacher, et al., Visible-light silicon nitride waveguide devices and implantable neurophotonic probes on thinned 200 mm silicon wafers, Opt. Express 27 (2019) 37400–37418. doi:10.1364/OE.27.037400
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Guo, Hangzhi, Alexander Woodruff, and Amulya Yadav. "Improving Lives of Indebted Farmers Using Deep Learning: Predicting Agricultural Produce Prices Using Convolutional Neural Networks." Proceedings of the AAAI Conference on Artificial Intelligence 34, no. 08 (April 3, 2020): 13294–99. http://dx.doi.org/10.1609/aaai.v34i08.7039.
Повний текст джерелаАнотація:
Farmer suicides have become an urgent social problem which governments around the world are trying hard to solve. Most farmers are driven to suicide due to an inability to sell their produce at desired profit levels, which is caused by the widespread uncertainty/fluctuation in produce prices resulting from varying market conditions. To prevent farmer suicides, this paper takes the first step towards resolving the issue of produce price uncertainty by presenting PECAD, a deep learning algorithm for accurate prediction of future produce prices based on past pricing and volume patterns. While previous work presents machine learning algorithms for prediction of produce prices, they suffer from two limitations: (i) they do not explicitly consider the spatio-temporal dependence of future prices on past data; and as a result, (ii) they rely on classical ML prediction models which often perform poorly when applied to spatio-temporal datasets. PECAD addresses these limitations via three major contributions: (i) we gather real-world daily price and (produced) volume data of different crops over a period of 11 years from an official Indian government administered website; (ii) we pre-process this raw dataset via state-of-the-art imputation techniques to account for missing data entries; and (iii) PECAD proposes a novel wide and deep neural network architecture which consists of two separate convolutional neural network models (trained for pricing and volume data respectively). Our simulation results show that PECAD outperforms existing state-of-the-art baseline methods by achieving significantly lesser root mean squared error (RMSE) - PECAD achieves ∼25% lesser coefficient of variance than state-of-the-art baselines. Our work is done in collaboration with a non-profit agency that works on preventing farmer suicides in the Indian state of Jharkhand, and PECAD is currently being reviewed by them for potential deployment.
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Ebschke, S., R. R. Poloczek, Klaus T. Kallis, and H. L. Fiedler. "Creating a Monocrystalline Membrane via Etching and Sealing of Nanoholes Considering its Sealing Behavior." Journal of Nano Research 25 (October 2013): 49–54. http://dx.doi.org/10.4028/www.scientific.net/jnanor.25.49.
Повний текст джерелаАнотація:
Based on silicon on insulator (SOI) technology [, a monocrystalline membrane is fabricated, in which a buried silicon dioxide layer in the silicon material is the sacrifice layer for the cavity. The membrane is a monocrystalline silicon top layer which contains nanoholes for creating the cavity in the buried oxide (BOX). To encapsulate the cavity the holes are sealed by using different techniques like non-stressed plasma-enhanced chemical vapour deposited (PECVD)-nitride and-oxide, thermal oxidation and evaporation of aluminum. To determine the sticking behavior of the membrane different sizes of membranes are fabricated and compared due to their sticking behavior. The experimental result shows that a membrane, having the size of 25 μm × 25 μm or below, has a perfect non-sticking behavior and can be used for further fabrication (cf. Fig. 8). For comparison, Figure 9 shows a membrane which delivers sticking behavior. The knowledge of this work can be widely used for several applications that need a cavity with a monocrystalline membrane like an absolute pressure sensor with a fully integrated CMOS-circuit on top of it [. This delivers a large variety of possibilities for novelty MEMS devices in different fields of research.
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Liu, Xiao, Qi Wu, Dongshun Bai, Trevor Stanley, Alvin Lee, Jay Su, and Baron Huang. "Temporary Wafer Bonding Materials with Mechanical and Laser Debonding Technologies for Semiconductor Device Processing." Journal of Microelectronics and Electronic Packaging 14, no. 1 (January 1, 2017): 39–43. http://dx.doi.org/10.4071/imaps.349121.
Повний текст джерелаАнотація:
Advanced wafer-level packaging (WLP) techniques, mainly driven by high-performance applications in memory and mobile market, have been adopted for large-scale manufacturing in recent years. Temporary wafer bonding and debonding technology have been widely studied and developed over the last decade for use in various WLP technologies, such as package on package, fan-out integration, and 2.5-D and 3-D integration using through-silicon-via. Temporary bonding technology enables handling of thinned substrates (<100 μm), which can no longer self-support during backside processing and packaging. Moreover, some applications require the temporary bonding materials to withstand temperatures up to 250°C in high-vacuum conditions, and even up to 350°C or higher during the dopant activation step required for manufacturing power devices. Therefore, a simple yet effective temporary bonding process and material that can survive all the backside processes is highly desired. In this study, a series of formulations based on polar thermoplastics was developed for temporary wafer bonding applications. These materials target high-temperature survivability and improved adhesion to prevent the premature delamination during downstream wafer processing. All these materials provide high thermal stability up to 250°C or higher, and are able to be bonded to carrier wafers treated with release layers, which can be selectively debonded by either mechanical or laser release after backside processing. The material left on device wafer after debonding can be easily cleaned using common industrial solvents. Wafers bonded with these materials demonstrate lower overall stack total thickness variation (<5 μm) after grinding and have successfully passed a 200°C plasma-enhanced chemical vapor deposition (PECVD) process without any delamination during grinding and PECVD processes.
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Liu, Xiao, Qi Wu, Dongshun Bai, Trevor Stanley, Alvin Lee, Jay Su, and Baron Huang. "Temporary Wafer Bonding Materials with Mechanical and Laser Debonding Technologies for Semiconductor Device Processing." International Symposium on Microelectronics 2016, no. 1 (October 1, 2016): 000469–74. http://dx.doi.org/10.4071/isom-2016-tha42.
Повний текст джерелаАнотація:
Abstract Advanced wafer-level packaging (WLP) techniques, mainly driven by high performance applications in memory and mobile market, have been adopted for large-scale manufacturing in recent years. Temporary wafer bonding and debonding technology has been widely studied and developed over the last decade for use in various WLP technologies, such as package-on-package (PoP), fan-out integration, and 2.5-D and 3-D integration using through-silicon-via (TSV). Temporary bonding technology enables handling of thinned substrates (<100 μm), which can no longer self-support during backside processing and packaging. Moreover, some applications require the temporary bonding materials to withstand temperatures up to 250°C in high-vacuum conditions, and even up to 350°C or higher during the dopant activation step required for manufacturing power devices. Therefore, a simple yet effective temporary bonding process and material that can survive all the backside processes is highly desired. In this study, a series of formulations based on polar thermoplastics were developed for temporary wafer bonding applications. These materials target high temperature survivability and improved adhesion to prevent the premature delamination during downstream wafer processing. All of these materials provide high thermal stability up to 250°C or higher, and are able to be bonded to carrier wafers treated with release layers, which can be selectively debonded by either mechanical or laser release after backside processing. The material left on device wafer after debonding can be easily cleaned using common industrial solvents. Wafers bonded with these materials demonstrate lower overall stack total thickness variation (TTV < 5 μm) after grinding and have successfully passed a 200°C PECVD process without any delamination during grinding and PECVD processes.
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Hughes, Lillian B., Zhiran Zhang, Chang Jin, Simon A. Meynell, Bingtian Ye, Weijie Wu, Zilin Wang, et al. "Two-dimensional spin systems in PECVD-grown diamond with tunable density and long coherence for enhanced quantum sensing and simulation." APL Materials 11, no. 2 (February 1, 2023): 021101. http://dx.doi.org/10.1063/5.0133501.
Повний текст джерелаАнотація:
Systems of spins engineered with tunable density and reduced dimensionality enable a number of advancements in quantum sensing and simulation. Defects in diamond, such as nitrogen-vacancy (NV) centers and substitutional nitrogen (P1 centers), are particularly promising solid-state platforms to explore. However, the ability to controllably create coherent, two-dimensional spin systems and characterize their properties, such as density, depth confinement, and coherence, is an outstanding materials challenge. We present a refined approach to engineer dense (≳1 ppm ⋅ nm), 2D nitrogen, and NV layers in diamond using delta-doping during plasma-enhanced chemical vapor deposition epitaxial growth. We employ both traditional materials techniques, e.g., secondary ion mass spectrometry, alongside NV spin decoherence-based measurements to characterize the density and dimensionality of the P1 and NV layers. We find P1 densities of 5–10 ppm ⋅ nm, NV densities between 1 and 3.5 ppm ⋅ nm tuned via electron irradiation dosage, and depth confinement of the spin layer down to 1.6 nm. We also observe high (up to 0.74) ratios of NV to P1 centers and reproducibly long NV coherence times, dominated by dipolar interactions with the engineered P1 and NV spin baths.
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Kang, Chiwon, Yongwoo Lee, Ilhwan Kim, Seungmin Hyun, Tae Hoon Lee, Soyeong Yun, Won-Sub Yoon, et al. "Highly Efficient Nanocarbon Coating Layer on the Nanostructured Copper Sulfide-Metal Organic Framework Derived Carbon for Advanced Sodium-Ion Battery Anode." Materials 12, no. 8 (April 23, 2019): 1324. http://dx.doi.org/10.3390/ma12081324.
Повний текст джерелаАнотація:
High theoretical capacity and low-cost copper sulfide (CuxS)-based anodes have gained great attention for advanced sodium-ion batteries (SIBs). However, their practical application may be hindered due to their unstable cycling performance and problems with the dissolution of sodium sulfides (NaxS) into electrolyte. Here, we employed metal organic framework (MOF-199) as a sacrificial template to fabricate nanoporous CuxS with a large surface area embedded in the MOF-derived carbon network (CuxS-C) through a two-step process of sulfurization and carbonization via H2S gas-assisted plasma-enhanced chemical vapor deposition (PECVD) processing. Subsequently, we uniformly coated a nanocarbon layer on the Cu1.8S-C through hydrothermal and subsequent annealing processes. The physico-chemical properties of the nanocarbon layer were revealed by the analytical techniques of high-resolution transmission electron microscopy (HRTEM), energy-dispersive X-ray spectroscopy (EDS), and scanning electron microscopy (SEM). We acquired a higher SIB performance (capacity retention (~93%) with a specific capacity of 372 mAh/g over 110 cycles) of the nanoporous Cu1.8S-C/C core/shell anode materials than that of pure Cu1.8S-C. This encouraging SIB performance is attributed to the key roles of a nanocarbon layer coated on the Cu1.8S-C to accommodate the volume variation of the Cu1.8S-C anode structure during cycling, enhance electrical conductivity and prevent the dissolution of NaxS into the electrolyte. With these physico-chemical and electrochemical properties, we ensure that the Cu1.8S-C/C structure will be a promising anode material for large-scale and advanced SIBs.
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Ahmed, Faheem, Shalendra Kumar, Nagih Mohammed Shaalan, Osama Saber, Sarish Rehman, Abdullah Aljaafari, Hatem Abuhimd, and Mohammad Alshahrani. "Synergistic Effect of Hexagonal Boron Nitride-Coated Separators and Multi-Walled Carbon Nanotube Anodes for Thermally Stable Lithium-Ion Batteries." Crystals 12, no. 2 (January 18, 2022): 125. http://dx.doi.org/10.3390/cryst12020125.
Повний текст джерелаАнотація:
In this work, we report the development of separators coated with hexagonal boron nitride (hBN) to improve the thermal stability of Li-ion batteries (LIBs). Aiming to achieve a synergistic effect of separators and anodes on thermal stability and electrochemical performance, multiwalled carbon nanotubes (MWCNTs) were prepared via plasma-enhanced chemical vapor deposition (PECVD) method and used as potential anode materials for LIBs. The grown MWCNTs were well characterized by using various techniques which confirmed the formation of MWCNTs. The prepared MWCNTs showed a crystalline structure and smooth surface with a diameter of ~9–12 nm and a length of ~10 μm, respectively. Raman spectra showed the characteristic peaks of MWCNTs and BN, and the sharpness of the peaks showed the highly crystalline nature of the grown MWCNTs. The electrochemical studies were performed on the fabricated coin cell with a MWCNT anode using a pristine and BN-coated separators. The results show that the cell with the BN-coated separator in a conventional organic carbonate-based electrolyte and MWCNTs as the anode resulted in a discharge capacity (at 65 °C) of ~567 mAhg−1 at a current density of 100 mAg−1 for the first cycle, and delivered a capacity of ~471 mAhg−1 for 200 cycles. The columbic efficiency was found to be higher (~84%), which showed excellent reversible charge–discharge behavior as compared with the pristine separator (69%) after 200 cycles. The improved thermal performance of the LIBs with the BN-coated separator and MWCNT anode might be due to the greater homogeneous thermal distribution resulting from the BN coating, and the additional electron pathway provided by the MWCNTs. Thus, the fabricated cell showed promising results in achieving the stable operation of the LIBs even at higher temperatures, which will open a pathway to solve the practical concerns over the use of LIBs at higher temperatures without compromising the performance.
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Yang, Chien-Sheng, Walter W. Read, Chris B. Arthur, and Gregory N. Parsons. "Comparison of Conventional and Self-Aligned a-Si:H Thin Film Transistors." MRS Proceedings 471 (1997). http://dx.doi.org/10.1557/proc-471-179.
Повний текст джерелаАнотація:
ABSTRACTConventional and self-aligned processes were developed for 250 °C inverse-staggered bottom gate a-Si:H thin film transistors (TFT's). Tri-layers of silicon nitride, amorphous silicon, and silicon nitride were continuously deposited in a plasma enhanced chemical vapor deposition system (PECVD). A self-alignment technique including back-side exposure and top nitride over etch was developed, which eliminates a masking step and the critical alignment of via opening used in typical TFT processing. Full self-aligned TFT's formed by selective n+ deposition were also fabricated successfully. Transistors show linear mobility ranging from 0.7 to 1.0 cm2/Vs, and current ON/OFF ratios greater than 106 were achieved for all TFT's.
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Dergham, Driss, M. Ouchabane, S. Hadjira, F. Lekoui, and S. Hassani. "Hydrophobization of paper intended for packaging." Revista Mexicana de Física 68, no. 3 May-Jun (April 27, 2022). http://dx.doi.org/10.31349/revmexfis.68.031006.
Повний текст джерелаАнотація:
Superhydrophobic surfaces are highly desired for several applications due to their exceptional properties such as self-cleaning, anti-icing, anti-friction and others. Such surfaces can be prepared via numerous methods including plasma technology [1-7]. Among plasma technology methods used to prepare these surfaces, the plasma enhanced chemical vapor deposition method, which provides the advantages of low cost, simple processing, and easy to form micro-nano structure. In this work, a treatment of surface paper for improving hydrophobicity using a PECVD technique was realized, paper substrates was treated by CH4 plasma , the substrates were held on a grounded substrate, with time variation of 5, 10, 15 and 20 min, while pressure and power have been kept constant at 8.10-2 and 100 W respectively. After deposition we proceeded to carry out structural and morphological characterization of the treated surfaces, by (SEM), AFM, FTIR and then through contact angle measurements. It is found that all layers are hydrophobic and super-hydrophobic. Except the layers treated for 10 minutes which are hydrophobic with a contact angle equal to 137.7° , the layers treated for 05, 15 and 20 minutes show superhydrophobic surfaces with a contact angles equal to 153.8°, , 149.2° and 156◦ respectively.
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Sarfraz, Muhammad, Waqas A. Liaqat, Mohsin Ali, and Asif A. Qaiser. "Graphene-integrated thermoplastic vulcanizates: Effects of in-situ vulcanization on structural, thermal, mechanical and electrical properties." Progress in Rubber, Plastics and Recycling Technology, December 20, 2022, 147776062211479. http://dx.doi.org/10.1177/14777606221147928.
Повний текст джерелаАнотація:
Gaining considerable attention as valuable plastic static-dissipative materials, conductive polymer blends are used as supercapacitors, light emitting diodes, artificial muscles and biosensors. Thermoplastic vulcanizates (PECVs) were prepared by blending ethylene propylene diene monomer (EPDM) and polypropylene (PP) thermoplastic via in-situ compatibilization technique by using a suitable compatibilizer and curing system. Electrically conducting graphene filler was incorporated into the blend to impart electroconducting properties. Maintaining a constant PP/EPDM ratio of 80:20 for all specimens, PECVs containing different loadings of graphene filler were prepared through in-situ compatibilization method. Fourier-transform infrared spectroscopy analysis was performed to investigate chemical changes ensued as a result of compatibilization reactions. Addition of graphene into the blended PECVs slightly improved their processability and thermally stable as confirmed by tests performed on Differential Scanning Calorimetery and Thermogravimetric Analyser. Mechanical aspects of the blends, inspected by operating Universal Testing Machine and Rockwell Hardness Tester, were substantially improved on account of blend compatibilization and addition of graphene. Their electrical properties measured through four-probe technique revealed significant improvement in electrical conductivity of compatibilized PECVs due to incorporation of graphene filler.