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Добірка наукової літератури з теми "Vapour Liquid Silod (VLS) growth mechanism"
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Статті в журналах з теми "Vapour Liquid Silod (VLS) growth mechanism"
Shakthivel, D., W. T. Navaraj, Simon Champet, Duncan H. Gregory, and R. S. Dahiya. "Propagation of amorphous oxide nanowires via the VLS mechanism: growth kinetics." Nanoscale Advances 1, no. 9 (2019): 3568–78. http://dx.doi.org/10.1039/c9na00134d.
Повний текст джерелаLorenzzi, Jean, Nikoletta Jegenyes, Mihai Lazar, Dominique Tournier, François Cauwet, Davy Carole, and Gabriel Ferro. "Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas." Materials Science Forum 679-680 (March 2011): 111–14. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.111.
Повний текст джерелаLagonegro, Paola, Matteo Bosi, Giovanni Attolini, Marco Negri, Sathish Chander Dhanabalan, Francesca Rossi, Francesco Boschi, P. P. Lupo, Tullo Besagni, and Giancarlo Salviati. "SiC NWs Grown on Silicon Substrate Using Fe as Catalyst." Materials Science Forum 806 (October 2014): 39–42. http://dx.doi.org/10.4028/www.scientific.net/msf.806.39.
Повний текст джерелаCarole, Davy, Stéphane Berckmans, Arthur Vo-Ha, Mihai Lazar, Dominique Tournier, Pierre Brosselard, Véronique Soulière, Laurent Auvray, Gabriel Ferro, and Christian Brylinski. "Buried Selective Growth of p-Doped SiC by VLS Epitaxy." Materials Science Forum 717-720 (May 2012): 169–72. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.169.
Повний текст джерелаJegenyes, Nikoletta, Jean Lorenzzi, Véronique Soulière, Jacques Dazord, François Cauwet, and Gabriel Ferro. "Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature." Materials Science Forum 645-648 (April 2010): 127–30. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.127.
Повний текст джерелаJayavel, R., T. Mochiku, S. Ooi, and K. Hirata. "Vapour–liquid–solid (VLS) growth mechanism of superconducting Bi–Sr–Ca–Cu–O whiskers." Journal of Crystal Growth 229, no. 1-4 (July 2001): 339–42. http://dx.doi.org/10.1016/s0022-0248(01)01177-0.
Повний текст джерелаBerckmans, Stéphane, Laurent Auvray, Gabriel Ferro, François Cauwet, Davy Carole, Véronique Soulière, Jean Claude Viala, Emmanuel Collard, Jean Baptiste Quoirin, and Christian Brylinski. "Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport." Materials Science Forum 679-680 (March 2011): 99–102. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.99.
Повний текст джерелаLorenzzi, Jean, Romain Esteve, Mihai Lazar, Dominique Tournier, Davy Carole та Gabriel Ferro. "Study of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned SiС Substrate". Materials Science Forum 717-720 (травень 2012): 165–68. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.165.
Повний текст джерелаSoueidan, Maher, Olivier Kim-Hak, Gabriel Ferro, Nada Habka та Bilal Nsouli. "Growth Kinetics of 3C-SiC on α-SiC by VLS". Materials Science Forum 600-603 (вересень 2008): 199–202. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.199.
Повний текст джерелаFerro, Gabriel. "New Approaches to In Situ Doping of SiC Epitaxial Layers." Advanced Materials Research 324 (August 2011): 14–19. http://dx.doi.org/10.4028/www.scientific.net/amr.324.14.
Повний текст джерелаДисертації з теми "Vapour Liquid Silod (VLS) growth mechanism"
Da, Conceicao Lorenzzi Jean Carlos. "Growth and doping of heteroepitaxial 3C-SiC layers on α-SiC substrates using Vapour-Liquid-Solid mechanism". Thesis, Lyon 1, 2010. http://www.theses.fr/2010LYO10179.
Повний текст джерелаRecently, the use of an original growth approach based on vapour-liquid-solid (VLS) mechanism with Ge-Si melts has led to significant improvement of the crystalline quality of the 3C-SiC thin layers heteroepitaxially grown on α-SiC(0001) substrate. This work tries to deepen the knowledge of such specific growth method, to improve the process and to determine the properties of the grown material. The first part was dedicated to the understanding and mastering of the various mechanisms involved in 3C-SiC growth by VLS mechanism. This led to the determination of the parameters limiting sample size and the demonstration of the benefits of using 50 at% Ge instead of 75 at% Ge melts. A study of lateral enlargement on patterned substrates gave some interesting hints which can be integrated in the model of twin defect elimination. The incorporation of non intentional and intentional n- and p-type dopants during VLS growth was studied. For n-type doping, a clear link between N impurity and 3C polytype stability was demonstrated. Besides, high purity layers with residual n-type doping below 1x1017 cm-3 were achieved. For p-type doping, the best element was shown to be Al and not Ga, even if it has to be alloyed with Ge-Si melts to avoid homoepitaxial growth. Finally, these layers were characterised by several optical and electrical means like Raman spectroscopy, low temperature photoluminescence, deep leveltransient spectroscopy and MOS capacitors measurements. Very low concentrationsof fixed oxide charges estimated about 7×109 cm-2 and interface states densities Dit equal to 1.2×1010 cm-2eV-1at 0.63 eV below the conduction band have been achieved. These record values are a very good base toward 3C-SiC MOSFET
Jabeen, Fauzia. "III-V semiconducting nanowires by molecular beam epitaxy." Doctoral thesis, Università degli studi di Trieste, 2009. http://hdl.handle.net/10077/3097.
Повний текст джерелаThis thesis is devoted to the study of the growth of III-V nanowires (NWs) by catalyst assisted and catalyst free molecular beam epitaxy (MBE). The nanostructures have been routinely characterized by scanning electron microscopy (SEM) and, to a minor extent by transmission electron microscopy (TEM). X-ray photoemission spectroscopy (XPS), scanning photoemission microscopy (SPEM), extended X-ray absrorption fi ne structure analysis (EXAFS), photoluminescence (PL) and trans- port measurements have given an important contribution on specifi c topics. The first section of this thesis reports on GaAs, InAs, and InGaAs NWs growth by Au assisted MBE. A substrate treatment is proposed that improves uniformity in the NWS morphology. Thanks to a careful statistical analysis of the NWs shape and dimensions as a function of growth temperature and duration, evidence is found of radial growth of the NWs taking place together with the axial growth at the tip. This eff ect is interpreted in term of temperature dependent diff usion length of the cations on the NWs lateral surface. The control of the NWs radial growth allowed to grow core shell InGaAs/GaAs NWs, displaying superior optical quality. A new procedure is proposed to protect NWs surface from air exposure. This procedure allowed to perform ex-situ SPEM studies of electronic properties of the NWs. The second part of this thesis is devoted to Au-free NWs growth. GaAs and InAs NWs were successfully grown for the first time using Mn as catalyst. Incorporation of Mn in the NW is studied using EXAFS technique. It is shown that Mn atoms are incorporated in the body of GaAs NWs. Use of low growth temperature is suggested in order to improve the Mn incorporation inside GaAs NWs and obtain NWs with magnetic properties. Finally, growth of GaAs and InAs NWs on cleaved Si subtrate is demonstrated without the use of any outside metal catalyst. Two kinds of nanowires have been obtained. The experimental findings suggest that the two types of nanowires grow after di fferent growth processes.
Questa tesi e' dedicata allo studio della crescita di nanofili di semiconduttori III- V tramite epitassia da fasci molecolari (MBE) assistita da catalizzatore e senza l'uso di catalizzatori. Le nanostrutture sono state caratterizzate sistematicamente tramite microscopia elettronica a scansione (SEM), e in maniera minore microscopia elettronica in trasmissione (TEM). Altre tecniche come la spettroscopia di fotoemissione da raggi x (XPS), la microscopia da fotoemissione in scansione (SPEM), la spettroscopia di assorbimento x (in particolare la extended X-ray absorpition fine structure analysis (EXAFS)) la fotoluminescenza (PL), e il trasporto elettrico hanno dato importanti contributi su problematiche specifiche. La prima parte di questa tesi riguarda la crescita di nanofili di GaAs, InAs e InGaAs tramite MBE assistita da oro. Viene proposto un trattamento del substrato che migliora nettamente l'omogeneita' morfologica dei nanofili. Grazie ad un'attenta analisi statistica della forma e delle dimensioni dei nanofili in funzione della temperatura e del tempo di crescita e' stata dimostrata la crescita radiale dei nanofili, che avviene insieme alla crescita assiale che ha luogo alla punta del nanofilo. Le osservazioni sperimentali sono state interpretate in termini di dipendenza dalla temperatura della lunghezza di diffusione dei cationi sulle super ci laterali dei nanofili. Il controllo della crescita radiale ha permesso di crescere nanofili di InGaAs/GaAs core shell, costituiti cioe' da una anima centrale di InGaAs (core) e uno strato esterno di GaAs (shell) , che hanno dimostrato eccellente qualita' ottica. Viene quindi proposta una nuova procedura per proteggere la super ficie dei nanofili durante l'esposizione all'aria. Grazie a questa e' stato possibile realizzare ex-situ uno studio SPEM delle proprieta' elettroniche dei nanofili. La seconda parte della tesi riguarda la crescita di nanofili senza l'uso di oro. Viene per la prima volta dimostrata la possibilita' di crescere nanofili di GaAs e InAs usando il manganese come catalizzatore. L'incorporazione del Mn come impurezza nei nanofili e' stata studiata tramite EXAFS. Le misure hanno dimostrato che atomi di Mn sono effettivamente incorporate nel corpo dei nano fili. La crescita delle nanostrutture a temperatura piu' bassa potrebbe migliorare qualitativamente l'incorporazione del Mn e permettere la crescita di nanofili con proprieta' magnetiche. Viene in fine dimostrata la crescita di nanofili di GaAs e di InAs senza l'utilizzo di materiali diversi da quelli costituenti il semiconduttore. Tale risultato e' ottenuto su superfici sfaldate di silicio. Sono state osservate nanostrutture di due tipi, che sulla base dei dati sperimentali sembrano essere dovuti a due diversi meccanismi di crescita.
XXI Ciclo
1977