Статті в журналах: "Van der Waals (vdW) heterostructures"

1

Albarakati, Sultan, Cheng Tan, Zhong-Jia Chen, James G. Partridge, Guolin Zheng, Lawrence Farrar, Edwin L. H. Mayes, et al. "Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 trilayer heterostructures." Science Advances 5, no. 7 (July 2019): eaaw0409. http://dx.doi.org/10.1126/sciadv.aaw0409.

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With no requirements for lattice matching, van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next-generation spintronic devices. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in vdW heterostructured Fe3GeTe2 (FGT)/graphite/FGT devices. Unlike conventional giant MR (GMR), which is characterized by two resistance states, the MR in these vdW heterostructures features distinct high-, intermediate-, and low-resistance states. This unique characteristic is suggestive of underlying physical mechanisms that differ from those observed before. After theoretical calculations, the three-resistance behavior was attributed to a spin momentum locking induced spin-polarized current at the graphite/FGT interface. Our work reveals that ferromagnetic heterostructures assembled from vdW materials can exhibit substantially different properties to those exhibited by similar heterostructures grown in vacuum. Hence, it highlights the potential for new physics and new spintronic applications to be discovered using vdW heterostructures.

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2

Rakib, Tawfiqur, Pascal Pochet, Elif Ertekin, and Harley T. Johnson. "Moiré engineering in van der Waals heterostructures." Journal of Applied Physics 132, no. 12 (September 28, 2022): 120901. http://dx.doi.org/10.1063/5.0105405.

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Isolated atomic planes can be assembled into a multilayer van der Waals (vdW) heterostructure in a precisely chosen sequence. These heterostructures feature moiré patterns if the constituent 2D material layers are stacked in an incommensurable way, due to a lattice mismatch or twist. This design-by-stacking has opened up the promising area of moiré engineering, a term that can be understood in two different perspectives, namely, (i) structural—engineering a moiré pattern by introducing twist, relative strain, or defects that affect the commensurability of the layers and (ii) functional—exploiting a moiré pattern to find and tune resulting physical properties of a vdW heterostructure. The latter meaning, referring to the application of a moiré pattern, is seen in the literature in the specific context of the observation of correlated electronic states and unconventional superconductivity in twisted bilayer graphene. The former meaning, referring to the design of the moiré pattern itself, is present in the literature but less commonly discussed or less understood. The underlying link between these two perspectives lies in the deformation field of the moiré superlattice. In this Perspective, we describe a path from designing a moiré pattern to employing the moiré pattern to tune physical properties of a vdW heterostructure. We also discuss the concept of moiré engineering in the context of twistronics, strain engineering, and defect engineering in vdW heterostructures. Although twistronics is always associated with moiré superlattices, strain and defect engineering are often not. Here, we demonstrate how strain and defect engineering can be understood within the context of moiré engineering. Adopting this perspective, we note that moiré engineering creates a compelling opportunity to design and develop multiscale electronic devices.

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3

Ma, Zechen, Ruifeng Li, Rui Xiong, Yinggan Zhang, Chao Xu, Cuilian Wen, and Baisheng Sa. "InSe/Te van der Waals Heterostructure as a High-Efficiency Solar Cell from Computational Screening." Materials 14, no. 14 (July 6, 2021): 3768. http://dx.doi.org/10.3390/ma14143768.

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Designing the electronic structures of the van der Waals (vdW) heterostructures to obtain high-efficiency solar cells showed a fascinating prospect. In this work, we screened the potential of vdW heterostructures for solar cell application by combining the group III–VI MXA (M = Al, Ga, In and XA = S, Se, Te) and elementary group VI XB (XB = Se, Te) monolayers based on first-principle calculations. The results highlight that InSe/Te vdW heterostructure presents type-II electronic band structure feature with a band gap of 0.88 eV, where tellurene and InSe monolayer are as absorber and window layer, respectively. Interestingly, tellurene has a 1.14 eV direct band gap to produce the photoexcited electron easily. Furthermore, InSe/Te vdW heterostructure shows remarkably light absorption capacities and distinguished maximum power conversion efficiency (PCE) up to 13.39%. Our present study will inspire researchers to design vdW heterostructures for solar cell application in a purposeful way.

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4

He, Junshan, Cong Wang, Bo Zhou, Yu Zhao, Lili Tao, and Han Zhang. "2D van der Waals heterostructures: processing, optical properties and applications in ultrafast photonics." Materials Horizons 7, no. 11 (2020): 2903–21. http://dx.doi.org/10.1039/d0mh00340a.

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The investigation of van der Waals (vdW) heterostructures has been becoming an attractive research topic. This review aims to present a thorough summarization of the research progress of vdW heterostructures in ultrafast photonics.

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5

Degaga, Gemechis D., Sumandeep Kaur, Ravindra Pandey, and John A. Jaszczak. "First-Principles Study of a MoS2-PbS van der Waals Heterostructure Inspired by Naturally Occurring Merelaniite." Materials 14, no. 7 (March 27, 2021): 1649. http://dx.doi.org/10.3390/ma14071649.

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Vertically stacked, layered van der Waals (vdW) heterostructures offer the possibility to design materials, within a range of chemistries and structures, to possess tailored properties. Inspired by the naturally occurring mineral merelaniite, this paper studies a vdW heterostructure composed of a MoS2 monolayer and a PbS bilayer, using density functional theory. A commensurate 2D heterostructure film and the corresponding 3D periodic bulk structure are compared. The results find such a heterostructure to be stable and possess p-type semiconducting characteristics. Due to the heterostructure’s weak interlayer bonding, its carrier mobility is essentially governed by the constituent layers; the hole mobility is governed by the PbS bilayer, whereas the electron mobility is governed by the MoS2 monolayer. Furthermore, we estimate the hole mobility to be relatively high (~106 cm2V−1s−1), which can be useful for ultra-fast devices at the nanoscale.

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6

Liu, Zixiang, and Zhiguo Wang. "Electronic Properties of MTe₂/AsI₃(M=Mo and W) Van der Waals Heterostructures." MATEC Web of Conferences 380 (2023): 01011. http://dx.doi.org/10.1051/matecconf/202338001011.

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Two dimensional (2D) materials with unique physical or chemical prperties has triggered worldwide interest in the fields of material science, condensed matter physics, and devices physics. Vertically stacking different 2D materials enables the creation of a large variety of van der Waals heterostructures. The van der Waals heterostructures robust the merits of the 2D materials electronic prperties. Using density functional theory calculations, the electronic structure of MTe2/AsI3(M=Mo and W) Van der Waals heterostructures are investigated in this work. The results show by stacking MTe2(M=Mo and W) and AsI3 vertically, a strongly binding vdW heterostructure with a type-II band alignment can be formed, which gives expectation of high multifunctional electronic performance. This theoretical study provides vital insights of 2D materials and their heterostructures which could be potential candidates for future nanoelectronic applications.

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7

You, Siwen, Xiao Guo, Junjie Jiang, Dingbang Yang, Mingjun Li, Fangping Ouyang, Haipeng Xie, Han Huang, and Yongli Gao. "Temperature−Dependent Raman Scattering Investigation on vdW Epitaxial PbI2/CrOCl Heterostructure." Crystals 13, no. 1 (January 6, 2023): 104. http://dx.doi.org/10.3390/cryst13010104.

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Van der Waals (vdW) epitaxial growth provides an efficient strategy to prepare heterostructures with atomically and electronically sharp interfaces. Herein, PbI2 was in situ thermally deposited onto exfoliated thin−layered CrOCl nanoflakes in high vacuum to fabricate vdW PbI2/CrOCl heterostructures. Optical microscopy, atomic force microscopy, X−ray diffraction, and temperature−dependent Raman spectroscopy were used to investigate the structural properties and phonon behaviors of the heterostructures. The morphology of PbI2 films on the CrOCl substrate obviously depended on the substrate temperature, changing from hemispherical granules to 2D nanoflakes with flat top surfaces. In addition, anomalous blueshift of the Ag1 and Au2 modes as the temperature increased in PbI2/CrOCl heterostructure was observed for the first time. Our results provide a novel material platform for the vdW heterostructure and a possible method for optimizing heterostructure growth behaviors.

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8

Sun, Cuicui, and Meili Qi. "Hybrid van der Waals heterojunction based on two-dimensional materials." Journal of Physics: Conference Series 2109, no. 1 (November 1, 2021): 012012. http://dx.doi.org/10.1088/1742-6596/2109/1/012012.

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Abstract Since the discovery of graphene, two-dimensional (2D) layered materials have always been the focus of material research. The layers of 2D materials are covalent bonds, and the layers are weakly bonded to adjacent layers through van der Waals (vdW) interactions. Since any dangling-bond-free surface could be combined with another material through vdW forces, the concept can be extended. This can refer to the integration of 2D materials with any other non-2D materials through non-covalent interactions. The emerging mixed-dimensional (2D+nD, where n is 0, 1 or 3) heterostructure devices has been studied and represents a wider range of vdW heterostructures. New electronic devices and optoelectronic devices based on such heterojunctions have unique functions. Therefore, this article depicts the research progress of (2D+nD, where n is 0, 1 or 3) vdW heterojunctions based on 2D materials.

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9

Li, Xufan, Ming-Wei Lin, Junhao Lin, Bing Huang, Alexander A. Puretzky, Cheng Ma, Kai Wang, et al. "Two-dimensional GaSe/MoSe2misfit bilayer heterojunctions by van der Waals epitaxy." Science Advances 2, no. 4 (April 2016): e1501882. http://dx.doi.org/10.1126/sciadv.1501882.

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Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2monolayer domains in lateral GaSe/MoSe2heterostructures, GaSe monolayers are found to overgrow MoSe2during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2heterostructures are shown to formp-njunctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.

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10

Song, Tiancheng, Xinghan Cai, Matisse Wei-Yuan Tu, Xiaoou Zhang, Bevin Huang, Nathan P. Wilson, Kyle L. Seyler, et al. "Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures." Science 360, no. 6394 (May 3, 2018): 1214–18. http://dx.doi.org/10.1126/science.aar4851.

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Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance that is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. Our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.

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11

Lu, Yueheng, Xiao Sun, Huabin Zhou, Haojie Lai, Ran Liu, Pengyi Liu, Yang Zhou, and Weiguang Xie. "A high-performance and broadband two-dimensional perovskite-based photodetector via van der Waals integration." Applied Physics Letters 121, no. 16 (October 17, 2022): 161104. http://dx.doi.org/10.1063/5.0116505.

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Van der Waals (vdW) integration of two-dimensional (2D) nanosheets provides the possibility to design optoelectronic devices with extended functionality in a controllable manner. Here, by leveraging the appropriate energy band alignment and the high-efficiency charge transfer at the junction, we construct the MoS2/graphene/2D-perovskite vdW heterostructure, which realizes the highly sensitive and broadband photodetection. Particularly, at the near-infrared (NIR) wavelength (λ = 1550 nm), the heterostructure photodetector shows a balanced trade-off between the high responsivity (>3000 A/W) and fast response time (<1 ms), outperforming the previously reported NIR photodetectors based on all-inorganic vdW heterostructures. Our work not only extends the response wavelength of the 2D hybrid perovskite-based photodetector to the NIR range, but also offers additional insight into optoelectronic devices via vdW integration engineering.

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12

Saini, Himanshu, M. V. Jyothirmai, Umesh V. Waghmare, and Ranjit Thapa. "Role of van der Waals interaction in enhancing the photon absorption capability of the MoS2/2D heterostructure." Physical Chemistry Chemical Physics 22, no. 5 (2020): 2775–82. http://dx.doi.org/10.1039/c9cp05782j.

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13

Ren, Kai, Ruxin Zheng, Peng Xu, Dong Cheng, Wenyi Huo, Jin Yu, Zhuoran Zhang, and Qingyun Sun. "Electronic and Optical Properties of Atomic-Scale Heterostructure Based on MXene and MN (M = Al, Ga): A DFT Investigation." Nanomaterials 11, no. 9 (August 30, 2021): 2236. http://dx.doi.org/10.3390/nano11092236.

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After the discovery of graphene, a lot of research has been conducted on two-dimensional (2D) materials. In order to increase the performance of 2D materials and expand their applications, two different layered materials are usually combined by van der Waals (vdW) interactions to form a heterostructure. In this work, based on first-principles calculation, some charming properties of the heterostructure constructed by Hf2CO2, AlN and GaN are addressed. The results show that Hf2CO2/AlN and Hf2CO2/GaN vdW heterostructures can keep their original band structure shape and have strong thermal stability at 300 K. In addition, the Hf2CO2/MN heterostructure has I-type band alignment structure, which can be used as a promising light-emitting device material. The charge transfer between the Hf2CO2 and AlN (or GaN) monolayers is 0.1513 (or 0.0414) |e|. The potential of Hf2CO2/AlN and Hf2CO2/GaN vdW heterostructures decreases by 6.445 eV and 3.752 eV, respectively, across the interface. Furthermore, both Hf2CO2/AlN and Hf2CO2/GaN heterostructures have remarkable optical absorption capacity, which further shows the application prospect of the Hf2CO2/MN heterostructure. The study of this work provides theoretical guidance for the design of heterostructures for use as photocatalytic and photovoltaic devices.

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14

El-Sayed, Marwa A., Andrey P. Tselin, Georgy A. Ermolaev, Mikhail K. Tatmyshevskiy, Aleksandr S. Slavich, Dmitry I. Yakubovsky, Sergey M. Novikov, Andrey A. Vyshnevyy, Aleksey V. Arsenin, and Valentyn S. Volkov. "Non-Additive Optical Response in Transition Metal Dichalcogenides Heterostructures." Nanomaterials 12, no. 24 (December 13, 2022): 4436. http://dx.doi.org/10.3390/nano12244436.

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Van der Waals (vdW) heterostructures pave the way to achieve the desired material properties for a variety of applications. In this way, new scientific and industrial challenges and fundamental questions arise. One of them is whether vdW materials preserve their original optical response when assembled in a heterostructure. Here, we resolve this issue for four exemplary monolayer heterostructures: MoS2/Gr, MoS2/hBN, WS2/Gr, and WS2/hBN. Through joint Raman, ellipsometry, and reflectance spectroscopies, we discovered that heterostructures alter MoS2 and WS2 optical constants. Furthermore, despite the similarity of MoS2 and WS2 monolayers, their behavior in heterostructures is markedly different. While MoS2 has large changes, particularly above 3 eV, WS2 experiences modest changes in optical constants. We also detected a transformation from dark into bright exciton for MoS2/Gr heterostructure. In summary, our findings provide clear evidence that the optical response of heterostructures is not the sum of optical properties of its constituents.

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15

Luo, Cai-Yun, Wei-Qing Huang, Liang Xu, Yin-Cai Yang, Xiaofan Li, Wangyu Hu, P. Peng, and Gui-Fang Huang. "Electronic properties and photoactivity of monolayer MoS2/fullerene van der Waals heterostructures." RSC Advances 6, no. 49 (2016): 43228–36. http://dx.doi.org/10.1039/c6ra05672e.

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16

Khan, Fawad, M. Idrees, C. Nguyen, Iftikhar Ahmad, and Bin Amin. "A first-principles study of electronic structure and photocatalytic performance of GaN–MX2 (M = Mo, W; X= S, Se) van der Waals heterostructures." RSC Advances 10, no. 41 (2020): 24683–90. http://dx.doi.org/10.1039/d0ra04082g.

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17

Barik, Gayatree, and Sourav Pal. "Strain-engineered BlueP–MoS2 van der Waals heterostructure with improved lithiation/sodiation for LIBs and SIBs." Physical Chemistry Chemical Physics 22, no. 3 (2020): 1701–14. http://dx.doi.org/10.1039/c9cp04349g.

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18

Deng, Yafeng, Yixiang Li, Pengfei Wang, Shuang Wang, Xuan Pan, and Dong Wang. "Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor." Journal of Semiconductors 43, no. 5 (May 1, 2022): 052003. http://dx.doi.org/10.1088/1674-4926/43/5/052003.

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Abstract With the atomically sharp interface and stable switching channel, van der Waals (vdW) heterostructure memristors have attracted extensive interests for the application of high-density memory and neuromorphic computing. Here, we demonstrate a new type of vdW heterostructure memristor device by sandwiching a single-crystalline h-BN layer between two thin graphites. In such a device, a stable bipolar resistive switching (RS) behavior has been observed for the first time. We also characterize their switching performance, and observe an on/off ratio of >10 3 and a minimum RESET voltage variation coefficient of 3.81%. Our work underscores the potential of 2D materials and vdW heterostructures for emerging memory and neuromorphic applications.

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19

Liu, Zhiyi, Xiaomei Hu, and Mingsheng Long. "High-performances ultraviolet photodetector based on vertical van der Waals heterostructures." Journal of Physics: Conference Series 2383, no. 1 (December 1, 2022): 012037. http://dx.doi.org/10.1088/1742-6596/2383/1/012037.

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High-performance ultraviolet (UV) photodetectors play a very important role in many fields, especially in the military, biomedical and other fields. [1]In recent years, many studies have realized ultraviolet photodetectors of 2D layered materials, overcome the problems of traditional ultraviolet detectors that are large and use high voltages. [1]Up to now, most of these works use atomically thin layers and simple p-n van der Waals (vdW) heterostructures, which have difficulty meeting the conditions of high sensitivity and ultrafast response at the same time. we report the double p-n van der Waals (vdW) heterostructure built on a large electrode. The two p-n junctions connected in parallel were proven to be able to effectively separate photo-generated carriers and suitable for ultraviolet light. This new type of photodetector exhibits competitive performance, including high R up to 254.8 A/W under UV light, and fast photoresponse τr = 7.9 μs and τd = 3.9 μs. These results provide an ideal platform for realizing highly sensitive UV photodetectors.

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20

You, Baiqing, Xiaocha Wang, and Wenbo Mi. "Prediction of spin–orbital coupling effects on the electronic structure of two dimensional van der Waals heterostructures." Physical Chemistry Chemical Physics 17, no. 46 (2015): 31253–59. http://dx.doi.org/10.1039/c5cp05068e.

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21

Geng, Huijuan, Di Yuan, Zhi Yang, Zhenjie Tang, Xiwei Zhang, Kui Yang, and Yanjie Su. "Graphene van der Waals heterostructures for high-performance photodetectors." Journal of Materials Chemistry C 7, no. 36 (2019): 11056–67. http://dx.doi.org/10.1039/c9tc03213d.

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22

Guo, Hongli, Xu Zhang, and Gang Lu. "Moiré excitons in defective van der Waals heterostructures." Proceedings of the National Academy of Sciences 118, no. 32 (August 2, 2021): e2105468118. http://dx.doi.org/10.1073/pnas.2105468118.

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Excitons can be trapped by moiré potentials in van der Waals (vdW) heterostructures, forming ordered arrays of quantum dots. Excitons can also be trapped by defect potentials as single photon emitters. While the moiré and defect potentials in vdW heterostructures have been studied separately, their interplay remains largely unexplored. Here, we perform first-principles calculations to elucidate the interplay of the two potentials in determining the optoelectronic properties of twisted MoS2/WS2 heterobilayers. The binding energy, charge density, localization, and hybridization of the moiré excitons can be modulated by the competition and cooperation of the two potentials. Their interplay can also be tuned by vertical electric fields, which can either de-trap the excitons or strongly localize them. One can further tailor the interplay of the two potentials via defect engineering to create one-dimensional exciton lattices with tunable orientations. Our work establishes defect engineering as a promising strategy to realize on-demand optoelectronic responses.

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23

Blackstone, Chance, and Anna Ignaszak. "Van der Waals Heterostructures—Recent Progress in Electrode Materials for Clean Energy Applications." Materials 14, no. 13 (July 5, 2021): 3754. http://dx.doi.org/10.3390/ma14133754.

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The unique layered morphology of van der Waals (vdW) heterostructures give rise to a blended set of electrochemical properties from the 2D sheet components. Herein an overview of their potential in energy storage systems in place of precious metals is conducted. The most recent progress on vdW electrocatalysis covering the last three years of research is evaluated, with an emphasis on their catalytic activity towards the oxygen reduction reaction (ORR), oxygen evolution reaction (OER), and hydrogen evolution reaction (HER). This analysis is conducted in pair with the most active Pt-based commercial catalyst currently utilized in energy systems that rely on the above-listed electrochemistry (metal–air battery, fuel cells, and water electrolyzers). Based on current progress in HER catalysis that employs vdW materials, several recommendations can be stated. First, stacking of the two types vdW materials, with one being graphene or its doped derivatives, results in significantly improved HER activity. The second important recommendation is to take advantage of an electronic coupling when stacking 2D materials with the metallic surface. This significantly reduces the face-to-face contact resistance and thus improves the electron transfer from the metallic surface to the vdW catalytic plane. A dual advantage can be achieved from combining the vdW heterostructure with metals containing an excess of d electrons (e.g., gold). Despite these recent and promising discoveries, more studies are needed to solve the complexity of the mechanism of HER reaction, in particular with respect to the electron coupling effects (metal/vdW combinations). In addition, more affordable synthetic pathways allowing for a well-controlled confined HER catalysis are emerging areas.

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24

Alam, Qaisar, S. Muhammad, M. Idrees, Nguyen V. Hieu, Nguyen T. T. Binh, C. Nguyen, and Bin Amin. "First-principles study of the electronic structures and optical and photocatalytic performances of van der Waals heterostructures of SiS, P and SiC monolayers." RSC Advances 11, no. 24 (2021): 14263–68. http://dx.doi.org/10.1039/d0ra10808a.

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Wang, Tao, Xiaoxing Tan, Yadong Wei, and Hao Jin. "Unveiling the layer-dependent electronic properties in transition-metal dichalcogenide heterostructures assisted by machine learning." Nanoscale 14, no. 6 (2022): 2511–20. http://dx.doi.org/10.1039/d1nr07747c.

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Pierucci, Debora, Aymen Mahmoudi, Mathieu Silly, Federico Bisti, Fabrice Oehler, Gilles Patriarche, Frédéric Bonell, et al. "Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe₂/Se-terminated GaAs heterojunction grown by molecular beam epitaxy." Nanoscale 14, no. 15 (2022): 5859–68. http://dx.doi.org/10.1039/d2nr00458e.

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27

Zhang, Wei, and Lifa Zhang. "Electric field tunable band-gap crossover in black(blue) phosphorus/g-ZnO van der Waals heterostructures." RSC Advances 7, no. 55 (2017): 34584–90. http://dx.doi.org/10.1039/c7ra06097a.

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28

Guo, Zhonglu, Naihua Miao, Jian Zhou, Baisheng Sa, and Zhimei Sun. "Strain-mediated type-I/type-II transition in MXene/Blue phosphorene van der Waals heterostructures for flexible optical/electronic devices." Journal of Materials Chemistry C 5, no. 4 (2017): 978–84. http://dx.doi.org/10.1039/c6tc04349f.

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Development of novel van der Waals (vdW) heterostructures from various two-dimensional (2D) materials shows unprecedented possibilities by combining the advantageous properties of their building layers.

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Chaudhary, Kundan, Michele Tamagnone, Mehdi Rezaee, D. Kwabena Bediako, Antonio Ambrosio, Philip Kim, and Federico Capasso. "Engineering phonon polaritons in van der Waals heterostructures to enhance in-plane optical anisotropy." Science Advances 5, no. 4 (April 2019): eaau7171. http://dx.doi.org/10.1126/sciadv.aau7171.

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Van der Waals (vdW) heterostructures assembled from layers of two-dimensional materials have attracted considerable interest due to their novel optical and electrical properties. Here, we report a scattering-type scanning near-field optical microscopy study of hexagonal boron nitride on black phosphorus (h-BN/BP) heterostructures, demonstrating the first direct observation of in-plane anisotropic phonon polariton modes in vdW heterostructures. Notably, the measured in-plane optical anisotropy along the armchair and zigzag crystal axes exceeds the ratio of refractive indices of BP in the x-y plane. We explain that this enhancement is due to the high confinement of the phonon polaritons in h-BN. We observe a maximum in-plane optical anisotropy of αmax = 1.25 in the frequency spectrum at 1405 to 1440 cm−1. These results provide new insights into the behavior of polaritons in vdW heterostructures, and the observed anisotropy enhancement paves the way to novel nanophotonic devices and to a new way to characterize optical anisotropy in thin films.

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30

Idrees, M., Chuong V. Nguyen, H. D. Bui, Iftikhar Ahmad, and Bin Amin. "van der Waals heterostructures based on MSSe (M = Mo, W) and graphene-like GaN: enhanced optoelectronic and photocatalytic properties for water splitting." Physical Chemistry Chemical Physics 22, no. 36 (2020): 20704–11. http://dx.doi.org/10.1039/d0cp03434g.

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Zhang, Zicheng, Tianlong Shi, Jingjing He, Chunsheng Liu, Lan Meng, and Xiaohong Yan. "Tunable Schottky barrier in a graphene/AlP van der Waals heterostructure." Semiconductor Science and Technology 38, no. 4 (March 3, 2023): 045009. http://dx.doi.org/10.1088/1361-6641/acbb1e.

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Abstract The controllable modulation of the electronic properties of two-dimensional van der Waals (vdW) heterostructures is crucial for their applications in the future nanoelectronic and optoelectronic devices. In this paper, the electronic properties of a graphene/AlP heterostructure are theoretically studied by first-principles calculation. The results show that due to the weak vdW interaction between graphene and the AlP monolayer, both the Dirac semi-metallic properties of graphene and the semiconductivity properties of monolayer AlP are well retained. The graphene/AlP heterostructure forms a 0.41 eV p-type Schottky contact, and the barrier height and contact type can be successively controlled by the applied external electric field and vertical stress. When the applied electric field exceeds −0.5 V Å−1, the heterostructure interface changes from a p-type Schottky contact to an n-type Schottky contact. When the applied electric field exceeds 0.4 V Å−1 or the interlayer spacing is less than 3.1 Å, the interface contact type changes to Ohmic contact. These results indicate that the graphene/AlP heterostucture behaves as tunable Schottky barrier for potential applications in nano-devices.

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Shin, Ki Hoon, Min-Kyu Seo, Sangyeon Pak, A.-Rang Jang, and Jung Inn Sohn. "Observation of Strong Interlayer Couplings in WS2/MoS2 Heterostructures via Low-Frequency Raman Spectroscopy." Nanomaterials 12, no. 9 (April 19, 2022): 1393. http://dx.doi.org/10.3390/nano12091393.

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Van der Waals (vdW) heterostructures based on two-dimensional (2D) transition metal dichalcogenides (TMDCs), particularly WS2/MoS2 heterostructures with type-II band alignments, are considered as ideal candidates for future functional optoelectronic applications owing to their efficient exciton dissociation and fast charge transfers. These physical properties of vdW heterostructures are mainly influenced by the interlayer coupling occurring at the interface. However, a comprehensive understanding of the interlayer coupling in vdW heterostructures is still lacking. Here, we present a detailed analysis of the low-frequency (LF) Raman modes, which are sensitive to interlayer coupling, in bilayers of MoS2, WS2, and WS2/MoS2 heterostructures directly grown using chemical vapor deposition to avoid undesirable interfacial contamination and stacking mismatch effects between the monolayers. We clearly observe two distinguishable LF Raman modes, the interlayer in-plane shear and out-of-plane layer-breathing modes, which are dependent on the twisting angles and interface quality between the monolayers, in all the 2D bilayered structures, including the vdW heterostructure. In contrast, LF modes are not observed in the MoS2 and WS2 monolayers. These results indicate that our directly grown 2D bilayered TMDCs with a favorable stacking configuration and high-quality interface can induce strong interlayer couplings, leading to LF Raman modes.

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Du, Juan, Congxin Xia, Wenqi Xiong, Tianxing Wang, Yu Jia, and Jingbo Li. "Two-dimensional transition-metal dichalcogenides-based ferromagnetic van der Waals heterostructures." Nanoscale 9, no. 44 (2017): 17585–92. http://dx.doi.org/10.1039/c7nr06473j.

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Zhang, W. X., Y. Yin, and C. He. "Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain." Physical Chemistry Chemical Physics 22, no. 45 (2020): 26231–40. http://dx.doi.org/10.1039/d0cp04474a.

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Graphene-based van der Waals (vdW) heterostructures composed of two-dimensional transition metal dichalcogenides (TMDs) and graphene show great potential in the design and manufacture of field effect transistors.

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35

Pham, Khang D., Lam V. Tan, M. Idrees, Bin Amin, Nguyen N. Hieu, Huynh V. Phuc, Le T. Hoa, and Nguyen V. Chuong. "Electronic structures, and optical and photocatalytic properties of the BP–BSe van der Waals heterostructures." New Journal of Chemistry 44, no. 35 (2020): 14964–69. http://dx.doi.org/10.1039/d0nj03236k.

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Vasić, Borislav, Uroš Ralević, Sonja Aškrabić, Davor Čapeta, and Marko Kralj. "Correlation between morphology and local mechanical and electrical properties of van der Waals heterostructures." Nanotechnology 33, no. 15 (January 21, 2022): 155707. http://dx.doi.org/10.1088/1361-6528/ac475a.

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Abstract Properties of van der Waals (vdW) heterostructures strongly depend on the quality of the interface between two dimensional (2D) layers. Instead of having atomically flat, clean, and chemically inert interfaces without dangling bonds, top-down vdW heterostructures are associated with bubbles and intercalated layers (ILs) which trap contaminations appeared during fabrication process. We investigate their influence on local electrical and mechanical properties of MoS2/WS2 heterostructures using atomic force microscopy (AFM) based methods. It is demonstrated that domains containing bubbles and ILs are locally softer, with increased friction and energy dissipation. Since they prevent sharp interfaces and efficient charge transfer between 2D layers, electrical current and contact potential difference are strongly decreased. In order to reestablish a close contact between MoS2 and WS2 layers, vdW heterostructures were locally flattened by scanning with AFM tip in contact mode or just locally pressed with an increased normal load. Subsequent electrical measurements reveal that the contact potential difference between two layers strongly increases due to enabled charge transfer, while local I/V curves exhibit increased conductivity without undesired potential barriers.

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37

Santos, Elton J. G., Declan Scullion, Ximo S. Chu, Duo O. Li, Nathan P. Guisinger, and Qing Hua Wang. "Rotational superstructure in van der Waals heterostructure of self-assembled C60 monolayer on the WSe2 surface." Nanoscale 9, no. 35 (2017): 13245–56. http://dx.doi.org/10.1039/c7nr03951d.

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Hybrid van der Waals (vdW) heterostructures composed of two-dimensional (2D) layered materials and self-assembled organic molecules are promising systems for electronic and optoelectronic applications with enhanced properties and performance.

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38

Zhu, Yuanzhi, Wenchao Peng, Yang Li, Guoliang Zhang, Fengbao Zhang, and Xiaobin Fan. "Multiple roles of a heterointerface in two-dimensional van der Waals heterostructures: insights into energy-related applications." Journal of Materials Chemistry A 7, no. 41 (2019): 23577–603. http://dx.doi.org/10.1039/c9ta06395a.

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This review summarizes the recent advancements in constructing two dimensional (2D) van der Waals (vdW) heterostructures for applications in water splitting, Li⁺/Na⁺ ion batteries, and supercapacitors.

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39

Cheng, Beitong, Yong Zhou, Ruomei Jiang, Xule Wang, Shuai Huang, Xingyong Huang, Wei Zhang, et al. "Structural, Electronic and Optical Properties of Some New Trilayer Van de Waals Heterostructures." Nanomaterials 13, no. 9 (May 8, 2023): 1574. http://dx.doi.org/10.3390/nano13091574.

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Constructing two-dimensional (2D) van der Waals (vdW) heterostructures is an effective strategy for tuning and improving the characters of 2D-material-based devices. Four trilayer vdW heterostructures, BP/BP/MoS2, BlueP/BlueP/MoS2, BP/graphene/MoS2 and BlueP/graphene/MoS2, were designed and simulated using the first-principles calculation. Structural stabilities were confirmed for all these heterostructures, indicating their feasibility in fabrication. BP/BP/MoS2 and BlueP/BlueP/MoS2 lowered the bandgaps further, making them suitable for a greater range of applications, with respect to the bilayers BP/MoS2 and BlueP/MoS2, respectively. Their absorption coefficients were remarkably improved in a wide spectrum, suggesting the better performance of photodetectors working in a wide spectrum from mid-wave (short-wave) infrared to violet. In contrast, the bandgaps in BP/graphene/MoS2 and BlueP/graphene/MoS2 were mostly enlarged, with a specific opening of the graphene bandgap in BP/graphene/MoS2, 0.051 eV, which is much larger than usual and beneficial for optoelectronic applications. Accompanying these bandgap increases, BP/graphene/MoS2 and BlueP/graphene/MoS2 exhibit absorption enhancement in the whole infrared, visible to deep ultraviolet or solar blind ultraviolet ranges, implying that these asymmetrically graphene-sandwiched heterostructures are more suitable as graphene-based 2D optoelectronic devices. The proposed 2D trilayer vdW heterostructures are prospective new optoelectronic devices, possessing higher performance than currently available devices.

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Tang, Kewei, Weihong Qi, Yejun Li, and Tianran Wang. "Tuning the electronic properties of van der Waals heterostructures composed of black phosphorus and graphitic SiC." Physical Chemistry Chemical Physics 20, no. 46 (2018): 29333–40. http://dx.doi.org/10.1039/c8cp06170j.

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41

Pham, Khang D., Cuong Q. Nguyen, C. V. Nguyen, Pham V. Cuong, and Nguyen V. Hieu. "Two-dimensional van der Waals graphene/transition metal nitride heterostructures as promising high-performance nanodevices." New Journal of Chemistry 45, no. 12 (2021): 5509–16. http://dx.doi.org/10.1039/d1nj00374g.

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Graphene-based van der Waals (vdW) heterostructures have attracted much attention because they can enhance the properties of separated materials, possess numerous new phenomena and unusual properties and improve the performance of devices.

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42

Ares, Pablo, Yi Bo Wang, Colin R. Woods, James Dougherty, Laura Fumagalli, Francisco Guinea, Benny Davidovitch, and Kostya S. Novoselov. "Van der Waals interaction affects wrinkle formation in two-dimensional materials." Proceedings of the National Academy of Sciences 118, no. 14 (March 31, 2021): e2025870118. http://dx.doi.org/10.1073/pnas.2025870118.

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Nonlinear mechanics of solids is an exciting field that encompasses both beautiful mathematics, such as the emergence of instabilities and the formation of complex patterns, as well as multiple applications. Two-dimensional crystals and van der Waals (vdW) heterostructures allow revisiting this field on the atomic level, allowing much finer control over the parameters and offering atomistic interpretation of experimental observations. In this work, we consider the formation of instabilities consisting of radially oriented wrinkles around mono- and few-layer “bubbles” in two-dimensional vdW heterostructures. Interestingly, the shape and wavelength of the wrinkles depend not only on the thickness of the two-dimensional crystal forming the bubble, but also on the atomistic structure of the interface between the bubble and the substrate, which can be controlled by their relative orientation. We argue that the periodic nature of these patterns emanates from an energetic balance between the resistance of the top membrane to bending, which favors large wavelength of wrinkles, and the membrane-substrate vdW attraction, which favors small wrinkle amplitude. Employing the classical “Winkler foundation” model of elasticity theory, we show that the number of radial wrinkles conveys a valuable relationship between the bending rigidity of the top membrane and the strength of the vdW interaction. Armed with this relationship, we use our data to demonstrate a nontrivial dependence of the bending rigidity on the number of layers in the top membrane, which shows two different regimes driven by slippage between the layers, and a high sensitivity of the vdW force to the alignment between the substrate and the membrane.

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43

Wu, Huihai, Xiaochuan Liu, Keyong Zhu, and Yong Huang. "Fano Resonance in Near-Field Thermal Radiation of Two-Dimensional Van der Waals Heterostructures." Nanomaterials 13, no. 8 (April 20, 2023): 1425. http://dx.doi.org/10.3390/nano13081425.

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Two-dimensional (2D) materials and their vertically stacked heterostructures have attracted much attention due to their novel optical properties and strong light-matter interactions in the infrared. Here, we present a theoretical study of the near-field thermal radiation of 2D vdW heterostructures vertically stacked of graphene and monolayer polar material (2D hBN as an example). An asymmetric Fano line shape is observed in its near-field thermal radiation spectrum, which is attributed to the interference between the narrowband discrete state (the phonon polaritons in 2D hBN) and a broadband continuum state (the plasmons in graphene), as verified by the coupled oscillator model. In addition, we show that 2D van der Waals heterostructures can achieve nearly the same high radiative heat flux as graphene but with markedly different spectral distributions, especially at high chemical potentials. By tuning the chemical potential of graphene, we can actively control the radiative heat flux of 2D van der Waals heterostructures and manipulate the radiative spectrum, such as the transition from Fano resonance to electromagnetic-induced transparency (EIT). Our results reveal the rich physics and demonstrate the potential of 2D vdW heterostructures for applications in nanoscale thermal management and energy conversion.

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Maruyama, Shigeo. "(Invited) Synthesis and Application of One-Dimensional Van Der Waals Heterostrucures Based on Single-Walled Carbon Nanotubes." ECS Meeting Abstracts MA2022-01, no. 9 (July 7, 2022): 724. http://dx.doi.org/10.1149/ma2022-019724mtgabs.

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A typical one-dimensional (1D) van der Waals (vdW) heterostructure consists of single-walled carbon nanotubes (SWCNT), boron nitride nanotube (BNNT), and molybdenum disulfide nanotube (MoS2NT), can be grown coaxially by successive chemical vapor deposition (CVD) steps [1]. The coaxially nested structure based on SWCNTs can expand the board application possibilities of 1D vdW heterostructures [2]. Semiconductor SWCNT wrapped with BNNT can be regarded as the ideal building blocks of field-effect transistors (FET) [3]. We have demonstrated the radial semiconductor–insulator–semiconductor (S-I-S) tunneling heterojunction diode by using a micrometer long 1D vdW heterostructure SWCNT@BNNT@MoS2NT [4]. By comparing optical properties of films of BNNT@MoS2NT and SWCNT@BNNT@MoS2NT, we found strong photoluminescence (PL) from monolayer MoS2NT and quenching of PL by coupling to SWCNT through thin BNNT [5]. The remarkable population of free charges and inter-tube excitons are demonstrated by ultrafast optical spectroscopy [6]. The inter-tube excition is regarded as the inter-layer excition for 2D heterostructures. Precise control of the chemical vapor deposition (CVD) process of each layer is essential since the mechanical exfoliation & stacking technique for 2D counterpart is not possible for 1D vdW heterostructures. The surprisingly sharp edge of BNNT grown on SWCNT is the signature of preference of nitrogen terminated zig-zag edge of h-BN common to 2D counterpart [7]. The next challenge is the CVD growth of various transition metal dichalcogenides on BNNTs. In addition to MoS2 nanotubes [1], we will discuss the growth control of WS2 nanotubes and NbS2 nanotubes. A general strategy we can tune the CVD condition from 2D flake to 1D tube is proposed [8]. Part of this work was supported by JSPS KAKENHI Grant Number JP20H00220, and by JST, CREST Grant Number JPMJCR20B5, Japan. References [1] R. Xiang, et al., Science, 367 (2020) 537. [2] S. Cambré, et al., Small, 17 (2021) 2102585. [3] R. Xiang, S. Maruyama, Small Sci., 1 (2021) 2000039. [4] Y. Feng, et al., ACS Nano, 15 (2021) 5600. [5] M. Liu, et al., ACS Nano, 15 (2021) 8418. [6] M. G. Burdanova, et al., Adv. Funct. Mater., 9 (2021) 2104969. [7] Y. Zheng, et al, P. Natl. Acad. Sci., 118 (2021) e2107295118. [8] Y. Zheng, et al, to be submitted.

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45

Lu, Hao, Junfeng Gao, Ziyu Hu, and Xiaohong Shao. "Biaxial strain effect on electronic structure tuning in antimonene-based van der Waals heterostructures." RSC Advances 6, no. 104 (2016): 102724–32. http://dx.doi.org/10.1039/c6ra21781h.

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By combining antimonene (Sb) with semimetal grapheme (G), semiconductor arsenene (As) and insulator hexagonal boron nitride (h-BN), three new 2D van der Waals (vdW) heterostructures, namely, G/Sb, As/Sb and h-BN/Sb, are designed and discussed.

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46

Behera, Sushant Kumar, and Pritam Deb. "Spin-transfer-torque mediated quantum magnetotransport in MoS2/phosphorene vdW heterostructure based MTJs." Physical Chemistry Chemical Physics 22, no. 34 (2020): 19139–46. http://dx.doi.org/10.1039/d0cp00836b.

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47

Jiang, Pingping, Pascal Boulet, and Marie-Christine Record. "Structure-Property Relationships of 2D Ga/In Chalcogenides." Nanomaterials 10, no. 11 (November 2, 2020): 2188. http://dx.doi.org/10.3390/nano10112188.

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Two-dimensional MX (M = Ga, In; X = S, Se, Te) homo- and heterostructures are of interest in electronics and optoelectronics. Structural, electronic and optical properties of bulk and layered MX and GaX/InX heterostructures have been investigated comprehensively using density functional theory (DFT) calculations. Based on the quantum theory of atoms in molecules, topological analyses of bond degree (BD), bond length (BL) and bond angle (BA) have been detailed for interpreting interatomic interactions, hence the structure–property relationship. The X–X BD correlates linearly with the ratio of local potential and kinetic energy, and decreases as X goes from S to Te. For van der Waals (vdW) homo- and heterostructures of GaX and InX, a cubic relationship between microscopic interatomic interaction and macroscopic electromagnetic behavior has been established firstly relating to weighted absolute BD summation and static dielectric constant. A decisive role of vdW interaction in layer-dependent properties has been identified. The GaX/InX heterostructures have bandgaps in the range 0.23–1.49 eV, absorption coefficients over 10−5 cm−1 and maximum conversion efficiency over 27%. Under strain, discordant BD evolutions are responsible for the exclusively distributed electrons and holes in sublayers of GaX/InX. Meanwhile, the interlayer BA adjustment with lattice mismatch explains the constraint-free lattice of the vdW heterostructure.

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Niu, Xianghong, Shanshan Xiao, Dazhong Sun, Anqi Shi, Zhaobo Zhou, Wei Chen, Xing’ao Li, and Jinlan Wang. "Direct formation of interlayer exciton in two-dimensional van der Waals heterostructures." Materials Horizons 8, no. 8 (2021): 2208–15. http://dx.doi.org/10.1039/d1mh00571e.

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We expand the concept of interlayer exciton formation and reveal that bright interlayer excitons can be formed by the direct interlayer photoexcitation in 2D vdW heterostructures with strong interlayer coupling and a short photoexcitation channel.

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49

Zhao, Bing, Bogdan Karpiak, Md Anamul Md Hoque, Pallavi Dhagat, and Saroj Prasad Dash. "Strong perpendicular anisotropic ferromagnet Fe3GeTe2/graphene van der Waals heterostructure." Journal of Physics D: Applied Physics, February 1, 2023. http://dx.doi.org/10.1088/1361-6463/acb801.

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Abstract Two-dimensional (2D) magnets offer a new platform for exploring fundamental properties in van der Waals (vdW) heterostructures and their device applications. Here, we investigated heterostructure devices of itinerant metallic vdW ferromagnet Fe3GeTe2 (FGT) with monolayer CVD graphene. The anomalous Hall effect measurements of FGT Hall-bar devices exhibit robust ferromagnetism with strong perpendicular anisotropy at low temperatures. The electrical transport properties measured in FGT/graphene heterostructure devices exhibit a tunneling transport with weak temperature dependence. We assessed the suitability of such FGT/graphene heterostructures for spin injection and detection and investigated the presence of FGT on possible spin absorption and spin relaxation in the graphene channel. These findings will be useful for engineering spintronic devices based on vdW heterostructures.

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50

Zheng, Z. Q., Zihao Huang, Yuchen Zhou, Zhongtong Luo, Yibin Yang, Mengmeng Yang, Wei Gao, et al. "Integration of Photovoltaic and Photogating Effects in WSe2/WS2/p-Si Dual Junction Photodetector Featuring High-Sensitivity and Fast-Response." Nanoscale Advances, 2023. http://dx.doi.org/10.1039/d2na00552b.

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Two-dimensional (2D) materials-based van der Waals (vdW) heterostructures with exotic semiconducting properties have shown tremendous potential in next-generation photovoltaic photodetectors. Nevertheless, these vdW heterostructure devices inevitably suffer a compromise between...

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