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Статті в журналах з теми "Van der Waals (vdW) heterostructures"
Albarakati, Sultan, Cheng Tan, Zhong-Jia Chen, James G. Partridge, Guolin Zheng, Lawrence Farrar, Edwin L. H. Mayes, et al. "Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 trilayer heterostructures." Science Advances 5, no. 7 (July 2019): eaaw0409. http://dx.doi.org/10.1126/sciadv.aaw0409.
Повний текст джерелаRakib, Tawfiqur, Pascal Pochet, Elif Ertekin, and Harley T. Johnson. "Moiré engineering in van der Waals heterostructures." Journal of Applied Physics 132, no. 12 (September 28, 2022): 120901. http://dx.doi.org/10.1063/5.0105405.
Повний текст джерелаMa, Zechen, Ruifeng Li, Rui Xiong, Yinggan Zhang, Chao Xu, Cuilian Wen, and Baisheng Sa. "InSe/Te van der Waals Heterostructure as a High-Efficiency Solar Cell from Computational Screening." Materials 14, no. 14 (July 6, 2021): 3768. http://dx.doi.org/10.3390/ma14143768.
Повний текст джерелаHe, Junshan, Cong Wang, Bo Zhou, Yu Zhao, Lili Tao, and Han Zhang. "2D van der Waals heterostructures: processing, optical properties and applications in ultrafast photonics." Materials Horizons 7, no. 11 (2020): 2903–21. http://dx.doi.org/10.1039/d0mh00340a.
Повний текст джерелаDegaga, Gemechis D., Sumandeep Kaur, Ravindra Pandey, and John A. Jaszczak. "First-Principles Study of a MoS2-PbS van der Waals Heterostructure Inspired by Naturally Occurring Merelaniite." Materials 14, no. 7 (March 27, 2021): 1649. http://dx.doi.org/10.3390/ma14071649.
Повний текст джерелаLiu, Zixiang, and Zhiguo Wang. "Electronic Properties of MTe2/AsI3(M=Mo and W) Van der Waals Heterostructures." MATEC Web of Conferences 380 (2023): 01011. http://dx.doi.org/10.1051/matecconf/202338001011.
Повний текст джерелаYou, Siwen, Xiao Guo, Junjie Jiang, Dingbang Yang, Mingjun Li, Fangping Ouyang, Haipeng Xie, Han Huang, and Yongli Gao. "Temperature−Dependent Raman Scattering Investigation on vdW Epitaxial PbI2/CrOCl Heterostructure." Crystals 13, no. 1 (January 6, 2023): 104. http://dx.doi.org/10.3390/cryst13010104.
Повний текст джерелаSun, Cuicui, and Meili Qi. "Hybrid van der Waals heterojunction based on two-dimensional materials." Journal of Physics: Conference Series 2109, no. 1 (November 1, 2021): 012012. http://dx.doi.org/10.1088/1742-6596/2109/1/012012.
Повний текст джерелаLi, Xufan, Ming-Wei Lin, Junhao Lin, Bing Huang, Alexander A. Puretzky, Cheng Ma, Kai Wang, et al. "Two-dimensional GaSe/MoSe2misfit bilayer heterojunctions by van der Waals epitaxy." Science Advances 2, no. 4 (April 2016): e1501882. http://dx.doi.org/10.1126/sciadv.1501882.
Повний текст джерелаSong, Tiancheng, Xinghan Cai, Matisse Wei-Yuan Tu, Xiaoou Zhang, Bevin Huang, Nathan P. Wilson, Kyle L. Seyler, et al. "Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures." Science 360, no. 6394 (May 3, 2018): 1214–18. http://dx.doi.org/10.1126/science.aar4851.
Повний текст джерелаДисертації з теми "Van der Waals (vdW) heterostructures"
Menon, Vaidehi. "Stiffness and Strain Sensitivity of Graphene-CNT van der Waals Heterostructures: Molecular Dynamics Study." University of Akron / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=akron1595938261814484.
Повний текст джерелаBoddison-Chouinard, Justin. "Fabricating van der Waals Heterostructures." Thesis, Université d'Ottawa / University of Ottawa, 2018. http://hdl.handle.net/10393/38511.
Повний текст джерелаMauro, Diego. "Electronic properties of Van der Waals heterostructures." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2016. http://amslaurea.unibo.it/10565/.
Повний текст джерелаMarsden, Alexander J. "Van der Waals epitaxy in graphene heterostructures." Thesis, University of Warwick, 2015. http://wrap.warwick.ac.uk/77193/.
Повний текст джерелаCoy, Diaz Horacio. "Preparation and Characterization of Van der Waals Heterostructures." Scholar Commons, 2016. http://scholarcommons.usf.edu/etd/6212.
Повний текст джерелаMa, Qiong Ph D. Massachusetts Institute of Technology. "Optoelectronics of graphene-based Van der Waals heterostructures." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/104523.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references.
Research on van der Waals (vdW) materials (homo- or hetero-) is a rapidly emerging field in condensed matter physics. They are layered structures with strong chemical bonding within layers and relatively weak van der Waals force to combine layers together. This unique layer-bylayer nature makes it easy to exfoliate layers out and at the same time to re-assemble in arbitrary sequences with different combinations. The versatility, flexibility, and relatively low cost of production make the scientific community enthusiastic about their future. In this thesis, I investigate the fundamental physical processes of light-matter interactions in these layered structures, including graphene, boron nitride, transition metal dichalcogenides and heterostructures formed from these materials. My research involves state-of-the-art nanoscale fabrication and microscale photocurrent spectroscopy and imaging. In Chapter 1, 1 will briefly discuss basic physical properties of the vdW materials involved in this thesis and introduce the main nanofabrication and measurement techniques. Chapter 2-4 are about hot electron dynamics and electron-phonon coupling in intrinsic graphene systems, among which Chapter 2 is focusing on the generation mechanism of the photocurrent at the p-n interface, which is demonstrated to have a photothermoelectric origin. This indicates a weak electron-phonon coupling strength in graphene. Chapter 3 is a direct experimental follow-up of the work in Chapter 2 and reveals the dominant electron-phonon coupling mechanism at different temperature and doping regimes. In Chapter 4, I present the observation of anomalous geometric photocurrent patterns in various devices at the charge neutral point. The spatial pattern can be understood as a local photo-generated current near edges being collected by remote electrodes. The anomalous behavior as functions of change density and temperature indicates an interesting regime of energy and charge dynamics. In Chapter 5 and 6, 1 will show the photoresponse of graphene-BN heterostuctures. In graphene-BN stack directly on SiO₂, we observed strong photo-induced doping phenomenon, which can be understood as charge transfer from graphene across BN and eventually trapped at the interface between BN and SiO₂. By inserting another layer of graphene between BN and SiO₂ , we can measure an electrical current after photoexcitation due to such charge transfer. We further studied the competition between this vertical charge transfer and in-plane carrier-carrier scattering in different regimes. In Chapter 7, I will briefly summarize collaborated work with Prof. Dimitri Basov's group on near-field imaging of surface polariton in two-dimensional materials. This technique provides a complementary tool to examine the intriguing light-matter interaction (for large momentum excitations) in low-dimensional materials. Chapter 8 is the outlook, from my own point of view, what more can be done following this thesis.
by Qiong Ma.
Ph. D.
Khestanova, Ekaterina. "Van der Waals heterostructures : fabrication, mechanical and electronic properties." Thesis, University of Manchester, 2018. https://www.research.manchester.ac.uk/portal/en/theses/van-der-waals-heterostructures-fabrication-mechanical-and-electronic-properties(047ce24b-7a58-4192-845d-54c7506f179f).html.
Повний текст джерелаYu, Geliang. "Transport properties of graphene based van der Waals heterostructures." Thesis, University of Manchester, 2015. https://www.research.manchester.ac.uk/portal/en/theses/transport-properties-of-graphene-based-van-der-waals-heterostructures(5cbb782f-4d49-42da-a05e-15b26606e263).html.
Повний текст джерелаTomarken, Spencer Louis. "Thermodynamic and tunneling measurements of van der Waals heterostructures." Thesis, Massachusetts Institute of Technology, 2019. https://hdl.handle.net/1721.1/123567.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 201-212).
In certain electronic systems, strong Coulomb interactions between electrons can favor novel electronic phases that are difficult to anticipate theoretically. Accessing fundamental quantities such as the density of states in these platforms is crucial to their analysis. In this thesis, I explore the application of two measurement techniques towards this goal: capacitance measurements that probe the thermodynamic ground state of an electronic system and planar tunneling measurements that access its quasiparticle excitation spectrum. Both techniques were applied to van der Waals materials, a class of crystals composed of layered atomic sheets with weak interplane bonding which permits the isolation of single and few-layer sheets that can be manually assembled into heterostructures. Capacitance measurements were performed on a material system commonly known as magic-angle twisted bilayer graphene (MATBG).
When two monolayers of graphene, a single sheet of graphite, are stacked on top of one another with a relative twist between their crystal axes, the resultant band structure is substantially modified from the cases of both monolayer graphene and Bernal-stacked (non-twisted) bilayer graphene. At certain magic angles, the low energy bands become extremely flat, quenching the electronic kinetic energy and allowing strong electron-electron interactions to become relevant. Exotic insulating and superconducting phases have been observed using conventional transport measurements. By accessing the thermodynamic density of states of MATBG, we estimate its low energy bandwidth, Fermi velocity, and interaction-driven energy gaps. Time-domain planar tunneling was performed on a heterostructure that consisted of monolayer graphene and hexagonal boron nitride (serving as the dielectric and tunnel barrier) sandwiched between a graphite tunneling probe and metal gate.
Tunneling currents were induced by applying a sudden voltage pulse across the full parallel plate structure. The lack of in-plane charge motion allowed access to the tunneling density of states even when the heterostructure was electrically insulating in the quantum Hall regime. These measurements represent the first application of time-domain planar tunneling to the van der Waals class of materials, an important step in extending the technique to new material platforms.
by Spencer Louis Tomarken.
Ph. D.
Ph.D. Massachusetts Institute of Technology, Department of Physics
Luo, Yuanhong Ph D. Massachusetts Institute of Technology. "Twist angle physics in graphene based van der Waals heterostructures." Thesis, Massachusetts Institute of Technology, 2018. http://hdl.handle.net/1721.1/119050.
Повний текст джерелаThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged student-submitted from PDF version of thesis.
Includes bibliographical references (pages 121-131).
In this thesis, I present my experimental work on twisted bilayer graphene, a van der Waals heterostructure consisting of two graphene sheets stack on top of each other. In particular, the twist angle is a new degree of freedom in this system, and has an important effect in the determination of its transport properties. The work presented will explore the twist-dependent physics in two regimes: the large twist angle and small twist angle regimes. In the large-twist angle limit, the two sheets have little interlayer interactions and are strongly decoupled, allowing us to put independent quantum Hall edge modes in both layers. We study the edge state interactions in this system, culminating in the formation of a quantum spin Hall state in twisted bilayer graphene. In the small twist angle limit, interlayer interactions are strong and the layers are strongly hybridized. Additionally, a new long-range moiré phenomenon emerges, and we study the effects of the interplay between moiré physics and interlayer interactions on its transport properties.
by Yuanhong Luo.
Ph. D.
Книги з теми "Van der Waals (vdW) heterostructures"
Holwill, Matthew. Nanomechanics in van der Waals Heterostructures. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9.
Повний текст джерелаFinney, Nathan Robert. Symmetry engineering via angular control of layered van der Waals heterostructures. [New York, N.Y.?]: [publisher not identified], 2021.
Знайти повний текст джерелаHolwill, Matthew. Nanomechanics in van der Waals Heterostructures. Springer, 2019.
Знайти повний текст джерела2D Materials and Van der Waals Heterostructures. MDPI, 2020. http://dx.doi.org/10.3390/books978-3-03928-769-7.
Повний текст джерелаZhang, Zheng, and Yue Zhang. Van der Waals Heterostructures: Fabrications, Properties and Applications. Wiley & Sons, Incorporated, John, 2022.
Знайти повний текст джерелаZhang, Zheng, and Yue Zhang. Van der Waals Heterostructures: Fabrications, Properties and Applications. Wiley & Sons, Limited, John, 2022.
Знайти повний текст джерелаZhang, Zheng, and Yue Zhang. Van der Waals Heterostructures: Fabrications, Properties and Applications. Wiley & Sons, Incorporated, John, 2022.
Знайти повний текст джерелаZhang, Zheng, and Yue Zhang. Van der Waals Heterostructures: Fabrications, Properties and Applications. Wiley & Sons, Incorporated, John, 2022.
Знайти повний текст джерелаЧастини книг з теми "Van der Waals (vdW) heterostructures"
Holwill, Matthew. "van der Waals Heterostructures." In Nanomechanics in van der Waals Heterostructures, 19–31. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_3.
Повний текст джерелаLui, C. H. "Raman Spectroscopy of van der Waals Heterostructures." In Raman Spectroscopy of Two-Dimensional Materials, 81–98. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1828-3_4.
Повний текст джерелаHolwill, Matthew. "Introduction." In Nanomechanics in van der Waals Heterostructures, 1–6. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_1.
Повний текст джерелаHolwill, Matthew. "Properties of Two-Dimensional Materials." In Nanomechanics in van der Waals Heterostructures, 7–17. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_2.
Повний текст джерелаHolwill, Matthew. "Fabrication and Characterisation Techniques." In Nanomechanics in van der Waals Heterostructures, 33–51. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_4.
Повний текст джерелаHolwill, Matthew. "Studying Superlattice Kinks via Electronic Transport." In Nanomechanics in van der Waals Heterostructures, 53–70. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_5.
Повний текст джерелаHolwill, Matthew. "Atomic Force Microscopy Studies of Superlattice Kinks." In Nanomechanics in van der Waals Heterostructures, 71–83. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_6.
Повний текст джерелаHolwill, Matthew. "Additional Work." In Nanomechanics in van der Waals Heterostructures, 85–91. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_7.
Повний текст джерелаHolwill, Matthew. "Conclusions and Future Work." In Nanomechanics in van der Waals Heterostructures, 93–94. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9_8.
Повний текст джерелаRoy, Kallol. "Photoresponse in Graphene-on-MoS$$_2$$ Heterostructures." In Optoelectronic Properties of Graphene-Based van der Waals Hybrids, 141–56. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-59627-9_6.
Повний текст джерелаТези доповідей конференцій з теми "Van der Waals (vdW) heterostructures"
Okada, Mitsuhiro, Yusuke Kureishi, Alex Kutana, Kenji Watanabe, Takashi Taniguchi, Hisanori Shinohara, and Ryo Kitaura. "Identification of PL emissions from Interlayer Excitons in 2D van der Waals Heterostructures." In JSAP-OSA Joint Symposia. Washington, D.C.: Optica Publishing Group, 2017. http://dx.doi.org/10.1364/jsap.2017.7a_a404_3.
Повний текст джерелаGhanekar, Alok, Yi Zheng, Weixing Zhang, and Zongqin Zhang. "Selective Emission Properties and vdW Energy of Micro/Nano-Sized Spherical Shapes." In ASME 2016 Heat Transfer Summer Conference collocated with the ASME 2016 Fluids Engineering Division Summer Meeting and the ASME 2016 14th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/ht2016-7494.
Повний текст джерелаHeinz, Tony F. "Optical Properties of van der Waals Heterostructures." In Laser Science. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/ls.2015.lw4h.1.
Повний текст джерелаRoy, T., M. Tosun, M. Amani, D. H. Lien, D. Kiriya, P. Zhao, S. Desai, A. Sachid, S. R. Madhvapathy, and A. Javey. "Van der Waals heterostructures for tunnel transistors." In 2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S). IEEE, 2015. http://dx.doi.org/10.1109/e3s.2015.7336791.
Повний текст джерелаPramanik, Nikhil, Sunchao Huang, Ruihuan Duan, Chris Boothroyd, Zheng Liu, and Liang Jie Wong. "Tunable Table-Top X-Rays from Tilted Van Der Waals Crystals." In CLEO: QELS_Fundamental Science. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_qels.2022.fth4a.3.
Повний текст джерелаMatsuoka, Hiroshige, Niki Kitahama, Teppei Tanaka, and Shigehisa Fukui. "Theoretical Study of van der Waals Dispersion Pressures Considering One-Dimensional Material Distributions in In-Plane Direction." In ASME 2013 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/isps2013-2845.
Повний текст джерелаZheng, Yi, and Arvind Narayanaswamy. "A First-Principles Method of Determining Van Der Waals Forces in a Dissipative Media." In ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/mnhmt2012-75165.
Повний текст джерелаTsoukalas, Athanasios, and Anthony Tzes. "Modelling and Adaptive Control of Tendon-Driven Micromanipulators in the Presence of Van-der-Waals Forces." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-59542.
Повний текст джерелаHashemi, Daniel, Stefan C. Badescu, Michael Snure, and Michael Snure. "Band Alignment in Van der Waals Phosphorous Heterostructures." In THE 3rd INTERNATIONAL CONFERENCE ON THEORETICAL AND APPLIED NANOSCIENCE AND NANOTECHNOLOGY. Avestia Publishing, 2019. http://dx.doi.org/10.11159/tann19.130.
Повний текст джерелаPlochocka, Paulina. "Excitons in MoS2/MoSe2 Van der Waals heterostructures." In nanoGe Fall Meeting 2019. València: Fundació Scito, 2019. http://dx.doi.org/10.29363/nanoge.ngfm.2019.443.
Повний текст джерелаЗвіти організацій з теми "Van der Waals (vdW) heterostructures"
Kim, Philip. Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, March 2015. http://dx.doi.org/10.21236/ada616377.
Повний текст джерела