Увійти

Готові списки джерел за темами / Van der Waals heterojunctions / Статті в журналах

Статті в журналах з теми "Van der Waals heterojunctions"

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: Van der Waals heterojunctions.

Автор: Grafiati

Опубліковано: 6 вересня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Van der Waals heterojunctions".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.

1

Lei, Xunyong. "Optimization of Mechanically Assembled Van Der Waals Heterostructure Based On Solution Immersion and Hot Plate Heating." Journal of Physics: Conference Series 2152, no. 1 (January 1, 2022): 012007. http://dx.doi.org/10.1088/1742-6596/2152/1/012007.

Повний текст джерела

Анотація:

Abstract Layers of two-dimensional material are bonded together by van der Waals force, as a result, there is no need to take into consideration of the lattice mismatch in the formation of heterojunction, which is endowed with the characteristics of simple stacking in method, free of limitation to the type of materials and diverse changes. However, although the Van Der Waals heterojunction is relatively easy to stack, it is still difficult to generate inter-layer coupling between the thin crystal layers that form the Van Der Waals heterojunction. In most cases, the stacked heterojunction is simply stacked together without any new effects. Therefore, the realization of heterojunction coupling is a difficult problem to be considered in the process of preparing Van Der Waals heterojunction. In this paper, a method based on solution immersion and hot plate heating is proposed to optimize the mechanical stacking of Van Der Waals heterojunctions. It is found that the heterojunctions prepared by normal mechanical stacking method are usually uncoupled before treatment, but they can be stably coupled after treatment. Our method, simple, fast with low-cost, has been repeatedly verified to have a high success rate of coupling, which is suitable for most experimental groups to use and reproduce.

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Jiang, Xixi, Min Zhang, Liwei Liu, Xinyao Shi, Yafen Yang, Kai Zhang, Hao Zhu, et al. "Multifunctional black phosphorus/MoS2 van der Waals heterojunction." Nanophotonics 9, no. 8 (February 18, 2020): 2487–93. http://dx.doi.org/10.1515/nanoph-2019-0549.

Повний текст джерела

Анотація:

AbstractThe fast-developing information technology has imposed an urgent need for effective solutions to overcome the limitations of integration density in chips with smaller size but higher performance. van der Waals heterojunctions built with two-dimensional (2D) semiconductors have been widely studied due to their 2D nature, and their unique electrical and photoelectronic properties are quite attractive in realizing multifunctional devices toward multitask applications. In this work, black phosphorus (BP)/MoS2 heterojunctions have been used to build electronic devices with various functionalities. A p-n diode is achieved based on the vertically stacked BP/MoS2 heterojunction exhibiting an ideal factor of 1.59, whereas a laterally stacked BP/MoS2 heterojunction is implemented to fabricate a photodetector that shows a photodetection responsivity of 2000 mA/W at a wavelength of 1300 nm. Furthermore, a ternary inverter has been realized using a BP field-effect transistor in-series with a lateral BP/MoS2 heterojunction. Such results have unambiguously demonstrated the superiority of BP/MoS2 heterojunction in realizing multiple functionalities and have offered a new pathway for the design and engineering of future circuitry and device integration based on novel 2D semiconductors.

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Luo, Hao, Bolun Wang, Enze Wang, Xuewen Wang, Yufei Sun, and Kai Liu. "High-Responsivity Photovoltaic Photodetectors Based on MoTe2/MoSe2 van der Waals Heterojunctions." Crystals 9, no. 6 (June 19, 2019): 315. http://dx.doi.org/10.3390/cryst9060315.

Повний текст джерела

Анотація:

Van der Waals heterojunctions based on transition metal dichalcogenides (TMDs) show promising potential in optoelectronic devices, due to the ultrafast separation of photoexcited carriers and efficient generation of the photocurrent. Herein, this study demonstrated a high-responsivity photovoltaic photodetector based on a MoTe2/MoSe2 type-II heterojunction. Due to the interlayer built-in potential, the MoTe2/MoSe2 heterojunction shows obvious photovoltaic behavior and its photoresponse can be tuned by the gate voltage due to the ultrathin thickness of the heterojunction. This self-powered photovoltaic photodetector exhibits an excellent responsivity of 1.5 A W−1, larger than previously reported TMDs-based photovoltaic photodetectors. Due to the high-efficiency separation of electron-hole pairs and ultrafast charge transfer, the light-induced on/off ratio of current switching is larger than 104 at zero bias, and the dark current is extremely low (~10−13 A). These MoTe2/MoSe2 type-II heterojunctions are expected to provide more opportunities for future nanoscale optoelectronic devices.

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Yan, Y., Z. Zeng, M. Huang, and P. Chen. "Van der waals heterojunctions for catalysis." Materials Today Advances 6 (June 2020): 100059. http://dx.doi.org/10.1016/j.mtadv.2020.100059.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Yao, Jiandong, and Guowei Yang. "Van der Waals heterostructures based on 2D layered materials: Fabrication, characterization, and application in photodetection." Journal of Applied Physics 131, no. 16 (April 28, 2022): 161101. http://dx.doi.org/10.1063/5.0087503.

Повний текст джерела

Анотація:

Construction of heterostructures has provided a tremendous degree of freedom to integrate, exert, and extend the features of various semiconductors, thereby opening up distinctive opportunities for the upcoming modern optoelectronics. The abundant physical properties and dangling-bond-free interface have enabled 2D layered materials serving as magical “Lego blocks” for building van der Waals heterostructures, which bring about superior contact quality (atomically sharp and distortionless) and the combination of functional units with various merits. Therefore, these heterostructures have been the focus of intensive research in the past decade. This Tutorial begins with a variety of strategies for fabricating van der Waals heterojunctions, categorized into the transfer-stacking method and in situ growth assembly method. Then, the techniques commonly exploited for characterizing the structure, morphology, band alignment, interlayer coupling, and dynamics of photocarriers of van der Waals heterojunctions are summarized, including Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy, conductive atomic force microscopy, Kelvin probe force microscope, ultraviolet photoelectron spectroscopy, transfer characteristic analysis, scanning photocurrent microscopy, etc. Following that, the application of various van der Waals heterojunctions for diverse photoelectric detection is comprehensively overviewed. On the whole, this Tutorial has epitomized the fabrication, characterization, and photodetection application of van der Waals heterostructures, which aims to provide instructive guidance for the abecedarians in this emerging field and offer impetus of advancing this rapidly evolving domain.

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Yao, Jiandong, and Guowei Yang. "Van der Waals heterostructures based on 2D layered materials: Fabrication, characterization, and application in photodetection." Journal of Applied Physics 131, no. 16 (April 28, 2022): 161101. http://dx.doi.org/10.1063/5.0087503.

Повний текст джерела

Анотація:

Construction of heterostructures has provided a tremendous degree of freedom to integrate, exert, and extend the features of various semiconductors, thereby opening up distinctive opportunities for the upcoming modern optoelectronics. The abundant physical properties and dangling-bond-free interface have enabled 2D layered materials serving as magical “Lego blocks” for building van der Waals heterostructures, which bring about superior contact quality (atomically sharp and distortionless) and the combination of functional units with various merits. Therefore, these heterostructures have been the focus of intensive research in the past decade. This Tutorial begins with a variety of strategies for fabricating van der Waals heterojunctions, categorized into the transfer-stacking method and in situ growth assembly method. Then, the techniques commonly exploited for characterizing the structure, morphology, band alignment, interlayer coupling, and dynamics of photocarriers of van der Waals heterojunctions are summarized, including Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy, conductive atomic force microscopy, Kelvin probe force microscope, ultraviolet photoelectron spectroscopy, transfer characteristic analysis, scanning photocurrent microscopy, etc. Following that, the application of various van der Waals heterojunctions for diverse photoelectric detection is comprehensively overviewed. On the whole, this Tutorial has epitomized the fabrication, characterization, and photodetection application of van der Waals heterostructures, which aims to provide instructive guidance for the abecedarians in this emerging field and offer impetus of advancing this rapidly evolving domain.

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Kong, Xiangyuan, Longwen Cao, Yuxing Shi, Zhouze Chen, Weilong Shi, and Xin Du. "Construction of S-Scheme 2D/2D Crystalline Carbon Nitride/BiOIO3 van der Waals Heterojunction for Boosted Photocatalytic Degradation of Antibiotics." Molecules 28, no. 13 (June 29, 2023): 5098. http://dx.doi.org/10.3390/molecules28135098.

Повний текст джерела

Анотація:

Utilization of semiconductor photocatalyst materials to degrade pollutants for addressing environmental pollution problems has become a research focus in recent years. In this work, a 2D/2D S-scheme crystalline carbon nitride (CCN)/BiOIO3 (BOI) van der Waals heterojunction was successfully constructed for effectively enhancing the degradation efficiency of antibiotic contaminant. The as-synthesized optimal CCN/BOI-3 sample exhibited the highest efficiency of 80% for the photo-degradation of tetracycline (TC, 20 mg/L) after 120 min visible light irradiation, which was significantly higher than that of pure CCN and BOI. The significant improvement in photocatalytic performance is mainly attributed to two aspects: (i) the 2D/2D van der Waals heterojunction can accelerate interface carriers’ separation and transfer and afford sufficient active sites; (ii) the S-scheme heterojunction elevated the redox capacity of CCN/BOI, thus providing a driving force for the degradation reaction. The degradation pathways of TC for the CCN/BOI composite were investigated in detail by liquid chromatography-mass spectrometry (LC-MS) analysis. This work provides a design idea for the development of efficient photocatalysts based on the 2D/2D S-scheme van der Waals heterojunctions.

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Xia, Wanshun, Liping Dai, Peng Yu, Xin Tong, Wenping Song, Guojun Zhang, and Zhiming Wang. "Recent progress in van der Waals heterojunctions." Nanoscale 9, no. 13 (2017): 4324–65. http://dx.doi.org/10.1039/c7nr00844a.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Chen, Xin, Wei-guo Pan, Rui-tang Guo, Xing Hu, Zhe-xu Bi, and Juan Wang. "Recent progress on van der Waals heterojunctions applied in photocatalysis." Journal of Materials Chemistry A 10, no. 14 (2022): 7604–25. http://dx.doi.org/10.1039/d2ta00500j.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Di Bartolomeo, Antonio. "Emerging 2D Materials and Their Van Der Waals Heterostructures." Nanomaterials 10, no. 3 (March 22, 2020): 579. http://dx.doi.org/10.3390/nano10030579.

Повний текст джерела

Анотація:

Two-dimensional (2D) materials and their van der Waals heterojunctions offer the opportunity to combine layers with different properties as the building blocks to engineer new functional materials for high-performance devices, sensors, and water-splitting photocatalysts. A tremendous amount of work has been done thus far to isolate or synthesize new 2D materials as well as to form new heterostructures and investigate their chemical and physical properties. This article collection covers state-of-the-art experimental, numerical, and theoretical research on 2D materials and on their van der Waals heterojunctions for applications in electronics, optoelectronics, and energy generation.

Стилі APA, Harvard, Vancouver, ISO та ін.

11

Sun, Yinchang, Liming Xie, Zhao Ma, Ziyue Qian, Junyi Liao, Sabir Hussain, Hongjun Liu, Hailong Qiu, Juanxia Wu, and Zhanggui Hu. "High-Performance Photodetectors Based on the 2D SiAs/SnS2 Heterojunction." Nanomaterials 12, no. 3 (January 24, 2022): 371. http://dx.doi.org/10.3390/nano12030371.

Повний текст джерела

Анотація:

Constructing 2D heterojunctions with high performance is the critical solution for the optoelectronic applications of 2D materials. This work reports on the studies on the preparation of high-quality van der Waals SiAs single crystals and high-performance photodetectors based on the 2D SiAs/SnS2 heterojunction. The crystals are grown using the chemical vapor transport (CVT) method and then the bulk crystals are exfoliated to a few layers. Raman spectroscopic characterization shows that the low wavenumber peaks from interlayer vibrations shift significantly along with SiAs’ thickness. In addition, when van der Waals heterojunctions of p-type SiAs/n-type SnS2 are fabricated, under the source-drain voltage of −1 V–1 V, they exhibit prominent rectification characteristics, and the ratio of forwarding conduction current to reverse shutdown current is close to 102, showing a muted response of 1 A/W under excitation light of 550 nm. The light responsivity and external quantum efficiency are increased by 100 times those of SiAs photodetectors. Our experimental results enrich the research on the IVA–VA group p-type layered semiconductors.

Стилі APA, Harvard, Vancouver, ISO та ін.

12

Yang, Yaxiao, and Zhiguo Wang. "A two-dimensional MoS2/C3N broken-gap heterostructure, a first principles study." RSC Advances 9, no. 34 (2019): 19837–43. http://dx.doi.org/10.1039/c9ra02935d.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

13

Zhu, Yonghao, Wei-Hai Fang, Angel Rubio, Run Long, and Oleg V. Prezhdo. "The twist angle has weak influence on charge separation and strong influence on recombination in the MoS₂/WS₂ bilayer: ab initio quantum dynamics." Journal of Materials Chemistry A 10, no. 15 (2022): 8324–33. http://dx.doi.org/10.1039/d1ta10788g.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

14

Katerynchuk, V. M., O. S. Litvin, Z. R. Kudrynskyi, Z. D. Kovalyuk, I. G. Tkachuk, and B. V. Kushnir. "Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe." Фізика і хімія твердого тіла 17, no. 4 (December 15, 2016): 507–10. http://dx.doi.org/10.15330/pcss.17.4.507-510.

Повний текст джерела

Анотація:

We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga2O3 on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0,74 - 1,0 µm.

Стилі APA, Harvard, Vancouver, ISO та ін.

15

Liu, Bingtong, Jin Wang, Shuji Zhao, Cangyu Qu, Yuan Liu, Liran Ma, Zhihong Zhang, Kaihui Liu, Quanshui Zheng, and Ming Ma. "Negative friction coefficient in microscale graphite/mica layered heterojunctions." Science Advances 6, no. 16 (April 2020): eaaz6787. http://dx.doi.org/10.1126/sciadv.aaz6787.

Повний текст джерела

Анотація:

The friction of a solid contact typically shows a positive dependence on normal load according to classic friction laws. A few exceptions were recently observed for nanoscale single-asperity contacts. Here, we report the experimental observation of negative friction coefficient in microscale monocrystalline heterojunctions at different temperatures. The results for the interface between graphite and muscovite mica heterojunction demonstrate a robust negative friction coefficient both in loading and unloading processes. Molecular dynamics simulations reveal that the underlying mechanism is a synergetic and nontrivial redistribution of water molecules at the interface, leading to larger density and more ordered structure of the confined subnanometer-thick water film. Our results are expected to be applicable to other hydrophilic van der Waals heterojunctions.

Стилі APA, Harvard, Vancouver, ISO та ін.

16

Li, Longhua, and Weidong Shi. "Tuning electronic structures of Sc2CO2/MoS2 polar–nonpolar van der Waals heterojunctions: interplay of internal and external electric fields." Journal of Materials Chemistry C 5, no. 32 (2017): 8128–34. http://dx.doi.org/10.1039/c7tc02384g.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

17

Wang, Yong, Chengxin Zeng, Yichen Liu, Dingyi Yang, Yu Zhang, Zewei Ren, Qikun Li, et al. "Constructing Heterogeneous Photocatalysts Based on Carbon Nitride Nanosheets and Graphene Quantum Dots for Highly Efficient Photocatalytic Hydrogen Generation." Materials 15, no. 15 (August 5, 2022): 5390. http://dx.doi.org/10.3390/ma15155390.

Повний текст джерела

Анотація:

Although graphitic carbon nitride nanosheets (CNs) with atomic thickness are considered as promising materials for hydrogen production, the wide band gap (3.06 eV) and rapid recombination of the photogenerated electron–hole pairs impede their applications. To address the above challenges, we synergized atomically thin CNs and graphene quantum dots (GQDs), which were fabricated as 2D/0D Van der Waals heterojunctions, for H2 generation in this study. The experimental characterizations indicated that the addition of GQDs to the π-conjugated system of CNs can expand the visible light absorption band. Additionally, the surface photovoltage spectroscopy (SPV) confirmed that introducing GQDs into CNs can facilitate the transport of photoinduced carriers in the melon chain, thus suppressing the recombination of charge carriers in body. As a result, the H2 production activity of the Van der Waals heterojunctions was 9.62 times higher than CNs. This study provides an effective strategy for designing metal-free Van der Waals hetero-structured photocatalysts with high photocatalytic activity.

Стилі APA, Harvard, Vancouver, ISO та ін.

18

Wang, Cong, Shengxue Yang, Wenqi Xiong, Congxin Xia, Hui Cai, Bin Chen, Xiaoting Wang, et al. "Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p–n heterojunctions." Physical Chemistry Chemical Physics 18, no. 40 (2016): 27750–53. http://dx.doi.org/10.1039/c6cp04752a.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

19

Zhou, Hong-Jun, Dong-Hui Xu, Qing-Hong Yang, Xiang-Yang Liu, Ganglong Cui, and Laicai Li. "Rational design of monolayer transition metal dichalcogenide@fullerene van der Waals photovoltaic heterojunctions with time-domain density functional theory simulations." Dalton Transactions 50, no. 19 (2021): 6725–34. http://dx.doi.org/10.1039/d1dt00291k.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

20

Liu, B., X. X. Ren, Xian Zhang, Ping Li, Y. Dong, and Zhi-Xin Guo. "Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions." Applied Physics Letters 122, no. 15 (April 10, 2023): 152408. http://dx.doi.org/10.1063/5.0139076.

Повний текст джерела

Анотація:

Magnetic tunnel junction (MTJ) based on van der Waals (vdW) magnetic layers has been found to present excellent tunneling magnetoresistance (TMR) property, which has great potential applications in field sensing, nonvolatile magnetic random access memories, and spin logics. Although MTJs composed of multilayer vdW magnetic homojunction have been extensively investigated, the ones composed of vdW magnetic heterojunction are still to be explored. Here, we use first-principles approaches to reveal that the magnetic heterojunction MTJs have much more distinguishable TMR values than the homojunction ones. In the MTJ composed of bilayer CrI3/bilayer Cr2Ge2Te6 heterojunction, we find there are eight stable magnetic states, leading to six distinguishable electronic resistances. As a result, five sizable TMRs larger than 300% can be obtained (the maximum TMR is up to 620 000%). Six distinguishable memories are obtained, which is two times larger than that of a four-layered homojunction MTJ. The underlying relationships among magnetic state, spin-polarized band structures, and transmission spectra are further revealed to explain the multiple TMR values. We also find that the magnetic states, and thus TMRs, can be efficiently modulated by an external electric field. This study opens an avenue to the design of high-performance MTJ devices based on vdW heterojunctions.

Стилі APA, Harvard, Vancouver, ISO та ін.

21

Wang, Biao, Xukai Luo, Junli Chang, Xiaorui Chen, Hongkuan Yuan, and Hong Chen. "Efficient charge separation and visible-light response in bilayer HfS2-based van der Waals heterostructures." RSC Advances 8, no. 34 (2018): 18889–95. http://dx.doi.org/10.1039/c8ra03047b.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

22

Browning, Robert, Paul Plachinda, Prasanna Padigi, Raj Solanki, and Sergei Rouvimov. "Growth of multiple WS2/SnS layered semiconductor heterojunctions." Nanoscale 8, no. 4 (2016): 2143–48. http://dx.doi.org/10.1039/c5nr08006a.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

23

Hu, Wei, and Jinlong Yang. "Two-dimensional van der Waals heterojunctions for functional materials and devices." Journal of Materials Chemistry C 5, no. 47 (2017): 12289–97. http://dx.doi.org/10.1039/c7tc04697a.

Повний текст джерела

Анотація:

Two-dimensional (2D) van der Waals heterojunctions combining the electronic structures of such 2D materials have been predicted theoretically and synthesized experimentally to expect more new properties and potential applications far beyond corresponding 2D materials.

Стилі APA, Harvard, Vancouver, ISO та ін.

24

Sun, Cuicui, and Meili Qi. "Hybrid van der Waals heterojunction based on two-dimensional materials." Journal of Physics: Conference Series 2109, no. 1 (November 1, 2021): 012012. http://dx.doi.org/10.1088/1742-6596/2109/1/012012.

Повний текст джерела

Анотація:

Abstract Since the discovery of graphene, two-dimensional (2D) layered materials have always been the focus of material research. The layers of 2D materials are covalent bonds, and the layers are weakly bonded to adjacent layers through van der Waals (vdW) interactions. Since any dangling-bond-free surface could be combined with another material through vdW forces, the concept can be extended. This can refer to the integration of 2D materials with any other non-2D materials through non-covalent interactions. The emerging mixed-dimensional (2D+nD, where n is 0, 1 or 3) heterostructure devices has been studied and represents a wider range of vdW heterostructures. New electronic devices and optoelectronic devices based on such heterojunctions have unique functions. Therefore, this article depicts the research progress of (2D+nD, where n is 0, 1 or 3) vdW heterojunctions based on 2D materials.

Стилі APA, Harvard, Vancouver, ISO та ін.

25

Fukai, Masaya, Noriyuki Urakami, and Yoshio Hashimoto. "Electrical Properties in Ta2NiSe5 Film and van der Waals Heterojunction." Coatings 11, no. 12 (December 2, 2021): 1485. http://dx.doi.org/10.3390/coatings11121485.

Повний текст джерела

Анотація:

Ternary Ta2NiSe5 is a novel electronic material having the property of an excitonic insulator at room temperature. The electrical properties of Ta2NiSe5 have not been elucidated in detail. We discuss the electronic properties in Ta2NiSe5 films and the formation of heterojunctions. Hall effect measurements showed p-type conductivity. The activation energies estimated from the temperature dependence of the carrier concentration were seen to be 0.17 eV and 0.12 eV, at approximately 300 and 400 K, respectively. It was observed that carrier generation behavior changes at the critical temperature of the excitonic insulator state (328 K). The temperature dependence of the Hall mobility below the critical temperature nearly follows the bell-shaped curves for conventional semiconductor materials. A MoS2/Ta2NiSe5 van der Waals heterojunction was fabricated using the transfer method. Rectification characteristics, which depend on the gate bias voltage, were obtained. The barrier height at the MoS2/Ta2NiSe5 heterointerface and the on/off ratio could be modulated by applying a gate bias voltage, suggesting that the carrier transport was exhibited in band-to-band flow. Our demonstration suggests that the knowledge of Ta2NiSe5 increased as an electronic material, and diode performance was successfully achieved for the electronic device applications.

Стилі APA, Harvard, Vancouver, ISO та ін.

26

Yeh, Chao-Hui, Zheng-Yong Liang, Yung-Chang Lin, Tien-Lin Wu, Ta Fan, Yu-Cheng Chu, Chun-Hao Ma, et al. "Scalable van der Waals Heterojunctions for High-Performance Photodetectors." ACS Applied Materials & Interfaces 9, no. 41 (October 5, 2017): 36181–88. http://dx.doi.org/10.1021/acsami.7b10892.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

27

Mao, Yuliang, Zheng Guo, Jianmei Yuan, and Tao Sun. "1D/2D van der Waals Heterojunctions Composed of Carbon Nanotubes and a GeSe Monolayer." Nanomaterials 11, no. 6 (June 14, 2021): 1565. http://dx.doi.org/10.3390/nano11061565.

Повний текст джерела

Анотація:

Based on first-principles calculations, we propose van der Waals (vdW) heterojunctions composed of one-dimensional carbon nanotubes (CNTs) and two-dimensional GeSe. Our calculations show that (n,0)CNT/GeSe (n = 5–11) heterojunctions are stable through weak vdW interactions. Among these heterojunctions, (n,0)CNT/GeSe (n = 5–7) exhibit metallic properties, while (n,0)CNT/GeSe (n = 8–11) have a small bandgap, lower than 0.8 eV. The absorption coefficient of (n,0)CNT/GeSe (n = 8–11) in the ultraviolet and infrared regions is around 105 cm−1. Specifically, we found that (11,0)CNT/GeSe exhibits type-II band alignment and has a high photoelectric conversion efficiency of 17.29%, which suggests prospective applications in photoelectronics.

Стилі APA, Harvard, Vancouver, ISO та ін.

28

Mondal, Chiranjit, Sourabh Kumar, and Biswarup Pathak. "Topologically protected hybrid states in graphene–stanene–graphene heterojunctions." Journal of Materials Chemistry C 6, no. 8 (2018): 1920–25. http://dx.doi.org/10.1039/c7tc05212j.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

29

Shi, Shun, Ya Feng, Bailing Li, Hongmei Zhang, Qiuqiu Li, Zhangxun Mo, Xinyun Zhou, et al. "Broadband and high-performance SnS₂/FePS₃/graphene van der Waals heterojunction photodetector." Applied Physics Letters 120, no. 8 (February 21, 2022): 081101. http://dx.doi.org/10.1063/5.0083272.

Повний текст джерела

Анотація:

Two-dimensional materials and their heterojunctions have received extensive attention in fundamental and applied research of photonics, electronics, and spintronics. Herein, we stacked SnS2, FePS3, and graphene (Gr) nanosheets into SnS2/FePS3/Gr van der Waals heterojunction, which exhibits broadband photoresponse from an ultraviolet region (405 nm) to an infrared region (850 nm) in atmosphere at room temperature. It was found that the dominated carrier of SnS2/FePS3 and SnS2/FePS3/Gr hererojunction was different in the electrical transport. The photoresponsivity of SnS2/FePS3/Gr heterojunction was about two orders of magnitude higher than that of SnS2 and FePS3 and SnS2/FePS3 heterojunction. The response time of SnS2/FePS3/Gr heterojunction was slightly shorter than that of SnS2/FePS3 heterojunction and two orders of magnitude shorter than that of SnS2 and FePS3 under the 450 nm laser. The high responsivity and short response time of SnS2/FePS3/Gr heterojunction should be attributed to the type II band alignment and short channel distance in the vertical direction where electrons and holes can be separated and transit fast. Our result offered an opportunity for realization of the high-performance and broadband photodetector.

Стилі APA, Harvard, Vancouver, ISO та ін.

30

Liu, Jie, Yaguang Guo, Fancy Qian Wang, and Qian Wang. "TiS3 sheet based van der Waals heterostructures with a tunable Schottky barrier." Nanoscale 10, no. 2 (2018): 807–15. http://dx.doi.org/10.1039/c7nr05606k.

Повний текст джерела

Анотація:

First-principles calculations suggest that the TiS₃ monolayer has the potential for device applications as a channel material contacting with graphene or other 2D metallic materials to form heterojunctions.

Стилі APA, Harvard, Vancouver, ISO та ін.

31

Li, Luji, Gaojie Zhang, Hao Wu, Li Yang, Pengfei Gao, Shanfei Zhang, Xiaokun Wen, Wenfeng Zhang, and Haixin Chang. "Tunable Photoresponse in 2D WTe2/MoS2 Van der Waals Heterojunctions." Journal of Physical Chemistry C 125, no. 19 (May 11, 2021): 10639–45. http://dx.doi.org/10.1021/acs.jpcc.1c01162.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

32

Zhu, Wenkai, Hailong Lin, Faguang Yan, Ce Hu, Ziao Wang, Lixia Zhao, Yongcheng Deng, et al. "Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions." Advanced Materials 33, no. 51 (October 13, 2021): 2104658. http://dx.doi.org/10.1002/adma.202104658.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

33

Liu, Yuanda, Fengqiu Wang, Yujie Liu, Xizhang Wang, Yongbing Xu, and Rong Zhang. "Charge transfer at carbon nanotube–graphene van der Waals heterojunctions." Nanoscale 8, no. 26 (2016): 12883–86. http://dx.doi.org/10.1039/c6nr03965k.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

34

Hu, Wei, and Jinlong Yang. "First-principles study of two-dimensional van der Waals heterojunctions." Computational Materials Science 112 (February 2016): 518–26. http://dx.doi.org/10.1016/j.commatsci.2015.06.033.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

35

Bafekry, Asadollah, Daniela Gogova, Mohamed M. Fadlallah, Nguyen V. Chuong, Mitra Ghergherehchi, Mehrdad Faraji, Seyed Amir Hossein Feghhi, and Mohamad Oskoeian. "Electronic and optical properties of two-dimensional heterostructures and heterojunctions between doped-graphene and C- and N-containing materials." Physical Chemistry Chemical Physics 23, no. 8 (2021): 4865–73. http://dx.doi.org/10.1039/d0cp06213h.

Повний текст джерела

Анотація:

The electronic and optical properties of vertical heterostructures (HTSs) and lateral heterojunctions (HTJs) between (B,N)-codoped graphene (dop@Gr) and graphene (Gr), C₃N, BC₃ and h-BN monolayers are investigated using van der Waals density functional theory calculations.

Стилі APA, Harvard, Vancouver, ISO та ін.

36

Zhu, Junqiang, Xiaofei Yue, Jiajun Chen, Jing Wang, Jing Wan, Wenzhong Bao, Laigui Hu, Ran Liu, Chunxiao Cong, and Zhijun Qiu. "Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe2/MoS2 Van der Waals Heterojunction." Applied Sciences 13, no. 10 (May 14, 2023): 6024. http://dx.doi.org/10.3390/app13106024.

Повний текст джерела

Анотація:

Out-of-plane p-n heterojunctions based on two-dimensional layered materials (2DLMs) with unusual physical characteristics are attracting extensive research attention for their application as photodetectors. However, the present fabrication method based on 2DLMs produces out-of-plane p-n homojunction devices with low photoresponsivity and detectivity. This work reports an ultrasensitive phototransistor based on a laser-induced p-doped WSe2/MoS2 van der Waals heterojunction. The laser treatment is used for p-doping WSe2 nanoflakes using high work function WOx. Then, an n-type MoS2 nanoflake is transferred onto the resulting p-doped WSe2 nanoflake. The built-in electric field of p-doped WSe2/MoS2 is stronger than that of pristine WSe2/MoS2. The p-n junction between p-doped WSe2 and MoS2 can separate more photogenerated electron–hole pairs and inject more electrons into MoS2 under laser illumination than pristine WSe2/MoS2. Thus, a high photoresponsivity (R) of ~1.28 × 105 A·W−1 and high specific detectivity (D*) of ~7.17 × 1013 Jones are achieved under the illumination of a 633 nm laser, which is approximately two orders higher than the best phototransistor based on a WSe2/MoS2 heterojunction. Our work provides an effective and simple method to enhance photoresponsivity and detectivity in two-dimensional (2D) heterojunction phototransistors, indicating the potential applications in fabricating high-performance photodetectors based on 2DLMs.

Стилі APA, Harvard, Vancouver, ISO та ін.

37

Peng, Bojun, Liang Xu, Jian Zeng, Xiaopeng Qi, Youwen Yang, Zongle Ma, Xin Huang, Ling-Ling Wang, and Cijun Shuai. "Layer-dependent photocatalysts of GaN/SiC-based multilayer van der Waals heterojunctions for hydrogen evolution." Catalysis Science & Technology 11, no. 9 (2021): 3059–69. http://dx.doi.org/10.1039/d0cy02251a.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

38

Zhang, Qing, Zhou Zhen, Yongfei Yang, Gongwen Gan, Deep Jariwala, and Xudong Cui. "Negative refraction inspired polariton lens in van der Waals lateral heterojunctions." Applied Physics Letters 114, no. 22 (June 3, 2019): 221101. http://dx.doi.org/10.1063/1.5098346.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

39

Miao, Jinshui, Xiwen Liu, Kiyoung Jo, Kang He, Ravindra Saxena, Baokun Song, Huiqin Zhang, et al. "Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces." Nano Letters 20, no. 4 (March 20, 2020): 2907–15. http://dx.doi.org/10.1021/acs.nanolett.0c00741.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

40

Li, Xufan, Ming-Wei Lin, Junhao Lin, Bing Huang, Alexander A. Puretzky, Cheng Ma, Kai Wang, et al. "Two-dimensional GaSe/MoSe2misfit bilayer heterojunctions by van der Waals epitaxy." Science Advances 2, no. 4 (April 2016): e1501882. http://dx.doi.org/10.1126/sciadv.1501882.

Повний текст джерела

Анотація:

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2monolayer domains in lateral GaSe/MoSe2heterostructures, GaSe monolayers are found to overgrow MoSe2during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2heterostructures are shown to formp-njunctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.

Стилі APA, Harvard, Vancouver, ISO та ін.

41

Olmos-Asar, Jimena A., Cedric Rocha Leão, and Adalberto Fazzio. "Novel III-Te–graphene van der Waals heterojunctions for optoelectronic devices." RSC Advances 7, no. 51 (2017): 32383–90. http://dx.doi.org/10.1039/c7ra03369a.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

42

Li, Changli, Qi Cao, Faze Wang, Yequan Xiao, Yanbo Li, Jean-Jacques Delaunay, and Hongwei Zhu. "Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion." Chemical Society Reviews 47, no. 13 (2018): 4981–5037. http://dx.doi.org/10.1039/c8cs00067k.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

43

Yan, Faguang, Ce Hu, Ziao Wang, Hailong Lin, and Kaiyou Wang. "Perspectives on photodetectors based on selenides and their van der Waals heterojunctions." Applied Physics Letters 118, no. 19 (May 10, 2021): 190501. http://dx.doi.org/10.1063/5.0045941.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

44

Yu, Miaomiao, Yunxia Hu, Feng Gao, Mingjin Dai, Lifeng Wang, PingAn Hu, and Wei Feng. "High-Performance Devices Based on InSe–In1–xGaxSe Van der Waals Heterojunctions." ACS Applied Materials & Interfaces 12, no. 22 (May 7, 2020): 24978–83. http://dx.doi.org/10.1021/acsami.0c03206.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

45

Li, Xufan, Ming-Wei Lin, Alexander A. Puretzky, Leonardo Basile, Kai Wang, Juan C. Idrobo, Christopher M. Rouleau, David B. Geohegan, and Kai Xiao. "Persistent photoconductivity in two-dimensional Mo1−xWxSe2–MoSe2 van der Waals heterojunctions." Journal of Materials Research 31, no. 7 (February 16, 2016): 923–30. http://dx.doi.org/10.1557/jmr.2016.35.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

46

Guo, Jianhang, Sai Jiang, Mengjiao Pei, Yanling Xiao, Bowen Zhang, Qijing Wang, Ying Zhu, et al. "Few‐Layer Organic Crystalline van der Waals Heterojunctions for Ultrafast UV Phototransistors." Advanced Electronic Materials 6, no. 6 (May 11, 2020): 2000062. http://dx.doi.org/10.1002/aelm.202000062.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

47

Liang, Xiao, Longjiang Deng, Fei Huang, Tingting Tang, Chuangtang Wang, Yupeng Zhu, Jun Qin, Yan Zhang, Bo Peng, and Lei Bi. "The magnetic proximity effect and electrical field tunable valley degeneracy in MoS2/EuS van der Waals heterojunctions." Nanoscale 9, no. 27 (2017): 9502–9. http://dx.doi.org/10.1039/c7nr03317f.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

48

Wang, Bin, Shengxue Yang, Cong Wang, Minghui Wu, Li Huang, Qian Liu, and Chengbao Jiang. "Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions." Nanoscale 9, no. 30 (2017): 10733–40. http://dx.doi.org/10.1039/c7nr03445h.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

49

Chava, Phanish, Zahra Fekri, Yagnika Vekariya, Thomas Mikolajick, and Artur Erbe. "Band-to-band tunneling switches based on two-dimensional van der Waals heterojunctions." Applied Physics Reviews 10, no. 1 (March 2023): 011318. http://dx.doi.org/10.1063/5.0130930.

Повний текст джерела

Анотація:

Quantum mechanical band-to-band tunneling is a type of carrier injection mechanism that is responsible for the electronic transport in devices like tunnel field effect transistors (TFETs), which hold great promise in reducing the subthreshold swing below the Boltzmann limit. This allows scaling down the operating voltage and the off-state leakage current at the same time, and thus reducing the power consumption of metal oxide semiconductor transistors. Conventional group IV or compound semiconductor materials suffer from interface and bulk traps, which hinder the device performance because of the increased trap-induced parasitics. Alternatives like two-dimensional materials (2DMs) are beneficial for realizing such devices due to their ultra-thin body and atomically sharp interfaces with van der Waals interactions, which significantly reduce the trap density, compared to their bulk counterparts, and hold the promise to finally achieve the desired low-voltage operation. In this review, we summarize the recent progress on such devices, with a major focus on heterojunctions made of different 2DMs. We review different types of emerging device concepts, architectures, and the tunneling mechanisms involved by analytically studying various simulations and experimental devices. We present our detailed perspective on the current developments, major roadblocks, and key strategies for further improvements of the TFET technology based on 2D heterojunctions to match industry requirements. The main goal of this paper is to introduce the reader to the concept of tunneling especially in van der Waals devices and provide an overview of the recent progress and challenges in the field.

Стилі APA, Harvard, Vancouver, ISO та ін.

50

Tang, Qianying, Fang Zhong, Qing Li, Jialu Weng, Junzhe Li, Hangyu Lu, Haitao Wu, et al. "Infrared Photodetection from 2D/3D van der Waals Heterostructures." Nanomaterials 13, no. 7 (March 24, 2023): 1169. http://dx.doi.org/10.3390/nano13071169.

Повний текст джерела

Анотація:

An infrared photodetector is a critical component that detects, identifies, and tracks complex targets in a detection system. Infrared photodetectors based on 3D bulk materials are widely applied in national defense, military, communications, and astronomy fields. The complex application environment requires higher performance and multi-dimensional capability. The emergence of 2D materials has brought new possibilities to develop next-generation infrared detectors. However, the inherent thickness limitations and the immature preparation of 2D materials still lead to low quantum efficiency and slow response speeds. This review summarizes 2D/3D hybrid van der Waals heterojunctions for infrared photodetection. First, the physical properties of 2D and 3D materials related to detection capability, including thickness, band gap, absorption band, quantum efficiency, and carrier mobility, are summarized. Then, the primary research progress of 2D/3D infrared detectors is reviewed from performance improvement (broadband, high-responsivity, fast response) and new functional devices (two-color detectors, polarization detectors). Importantly, combining low-doped 3D and flexible 2D materials can effectively improve the responsivity and detection speed due to a significant depletion region width. Furthermore, combining the anisotropic 2D lattice structure and high absorbance of 3D materials provides a new strategy in high-performance polarization detectors. This paper offers prospects for developing 2D/3D high-performance infrared detection technology.

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!