Статті в журналах з теми "Vacancy Engineering"
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Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Vacancy Engineering".
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Huang, Yanmei, Yu Yu, Yifu Yu, and Bin Zhang. "Oxygen Vacancy Engineering in Photocatalysis." Solar RRL 4, no. 8 (March 31, 2020): 2000037. http://dx.doi.org/10.1002/solr.202000037.
Повний текст джерелаWang, Biao, Jiawen Liu, Shan Yao, Fangyan Liu, Yuekun Li, Jiaqing He, Zhang Lin, Feng Huang, Chuan Liu, and Mengye Wang. "Vacancy engineering in nanostructured semiconductors for enhancing photocatalysis." Journal of Materials Chemistry A 9, no. 32 (2021): 17143–72. http://dx.doi.org/10.1039/d1ta03895h.
Повний текст джерелаPan, Rongjian, Aitao Tang, Jiantao Qin, Tianyuan Xin, Xiaoyong Wu, Bang Wen та Lu Wu. "Trapping Capability of Small Vacancy Clusters in the α-Zr Doped with Alloying Elements: A First-Principles Study". Crystals 12, № 7 (18 липня 2022): 997. http://dx.doi.org/10.3390/cryst12070997.
Повний текст джерелаLee, Seonjeong, Han Ju Lee, Yena Ji, Sung Mook Choi, Keun Hyung Lee, and Kihyon Hong. "Vacancy engineering of a solution processed CuI semiconductor: tuning the electrical properties of inorganic P-channel thin-film transistors." Journal of Materials Chemistry C 8, no. 28 (2020): 9608–14. http://dx.doi.org/10.1039/d0tc02005b.
Повний текст джерелаLi, Tong, Qi Wang, and Zhou Wang. "Oxygen Vacancy Injection on (111) CeO2 Nanocrystal Facets for Efficient H2O2 Detection." Biosensors 12, no. 8 (August 3, 2022): 592. http://dx.doi.org/10.3390/bios12080592.
Повний текст джерелаShoemaker, J. R., R. T. Lutton, D. Wesley, W. R. Wharton, M. L. Oehrli, M. S. Herte, M. J. Sabochick, and N. Q. Lam. "Point defect study of CuTi and CuTi2." Journal of Materials Research 6, no. 3 (March 1991): 473–82. http://dx.doi.org/10.1557/jmr.1991.0473.
Повний текст джерелаGwilliam, R., N. E. B. Cowern, B. Colombeau, B. Sealy, and A. J. Smith. "Vacancy engineering for ultra-shallow junction formation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 261, no. 1-2 (August 2007): 600–603. http://dx.doi.org/10.1016/j.nimb.2007.04.048.
Повний текст джерелаYamashita, Shohei, and Kazumasa Takami. "Autonomous, Distributed Parking Lot Vacancy Management Using Intervehicle Communication." International Journal of Vehicular Technology 2014 (July 21, 2014): 1–9. http://dx.doi.org/10.1155/2014/647487.
Повний текст джерелаGebauer, Ralph. "Oxygen Vacancies in Zirconia and Their Migration: The Role of Hubbard-U Parameters in Density Functional Theory." Crystals 13, no. 4 (March 28, 2023): 574. http://dx.doi.org/10.3390/cryst13040574.
Повний текст джерелаROUHI, A. MAUREEN. "NO VACANCY." Chemical & Engineering News Archive 80, no. 7 (February 18, 2002): 84–85. http://dx.doi.org/10.1021/cen-v080n007.p084.
Повний текст джерелаYang, Bian, Jihong Bian, Lei Wang, Jianwei Wang, Yaping Du, Zhiguang Wang, Chao Wu, and Yaodong Yang. "Enhanced photocatalytic activity of perovskite NaNbO3 by oxygen vacancy engineering." Physical Chemistry Chemical Physics 21, no. 22 (2019): 11697–704. http://dx.doi.org/10.1039/c9cp01763a.
Повний текст джерелаLi, Jie, Kaige Huang, Yanbin Huang, Yumin Ye, Marcin Ziółek, Zhijie Wang, Shizhong Yue, et al. "State-of-the-art advances in vacancy defect engineering of graphitic carbon nitride for solar water splitting." Journal of Semiconductors 44, no. 8 (August 1, 2023): 081701. http://dx.doi.org/10.1088/1674-4926/44/8/081701.
Повний текст джерелаJia, Tiekun, Chenxi Sun, Nianfeng Shi, Dongsheng Yu, Fei Long, Ji Hu, Jilin Wang, et al. "Efficient Oxygen Vacancy Defect Engineering for Enhancing Visible-Light Photocatalytic Performance over SnO2−x Ultrafine Nanocrystals." Nanomaterials 12, no. 19 (September 25, 2022): 3342. http://dx.doi.org/10.3390/nano12193342.
Повний текст джерелаFeng, Haifeng, Zhongfei Xu, Long Ren, Chen Liu, Jincheng Zhuang, Zhenpeng Hu, Xun Xu, et al. "Activating Titania for Efficient Electrocatalysis by Vacancy Engineering." ACS Catalysis 8, no. 5 (April 11, 2018): 4288–93. http://dx.doi.org/10.1021/acscatal.8b00719.
Повний текст джерелаWen, Yan Ni. "Atomic Diffusion in the (001) Surface of Cu3Ag Ordered Alloy." Advanced Materials Research 680 (April 2013): 3–7. http://dx.doi.org/10.4028/www.scientific.net/amr.680.3.
Повний текст джерелаDong, Jinfeng, Fu-Hua Sun, Huaichao Tang, Jun Pei, Hua-Lu Zhuang, Hai-Hua Hu, Bo-Ping Zhang, Yu Pan, and Jing-Feng Li. "Medium-temperature thermoelectric GeTe: vacancy suppression and band structure engineering leading to high performance." Energy & Environmental Science 12, no. 4 (2019): 1396–403. http://dx.doi.org/10.1039/c9ee00317g.
Повний текст джерелаYang, Heng Quan, Xiao Yang Wang, Hong Wu, Bin Zhang, Dan Dan Xie, Yong Jin Chen, Xu Lu, Xiao Dong Han, Lei Miao, and Xiao Yuan Zhou. "Sn vacancy engineering for enhancing the thermoelectric performance of two-dimensional SnS." Journal of Materials Chemistry C 7, no. 11 (2019): 3351–59. http://dx.doi.org/10.1039/c8tc05711g.
Повний текст джерелаWang, Yun Fei, Yun Kai Li, and Ming Xia. "Valence Electron Structures Analysis on Relationship of Cu Physical or Mechanical Properties and Vacancy." Advanced Materials Research 750-752 (August 2013): 776–81. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.776.
Повний текст джерелаTan, X. J., H. Z. Shao, J. He, G. Q. Liu, J. T. Xu, J. Jiang, and H. C. Jiang. "Band engineering and improved thermoelectric performance in M-doped SnTe (M = Mg, Mn, Cd, and Hg)." Physical Chemistry Chemical Physics 18, no. 10 (2016): 7141–47. http://dx.doi.org/10.1039/c5cp07620j.
Повний текст джерелаSun, Shi Yang, Ping Ping Xu, Xue Jie Liu, and Xin Tan. "First-Principles Calculation of the Vacancy Formation Energy in VC." Advanced Materials Research 887-888 (February 2014): 966–69. http://dx.doi.org/10.4028/www.scientific.net/amr.887-888.966.
Повний текст джерелаChen, Pengfei, Yiao Huang, Zuhao Shi, Xingzhu Chen, and Neng Li. "Improving the Catalytic CO2 Reduction on Cs2AgBiBr6 by Halide Defect Engineering: A DFT Study." Materials 14, no. 10 (May 11, 2021): 2469. http://dx.doi.org/10.3390/ma14102469.
Повний текст джерелаChu, Chun-Hsiao. "Optimal Fare, Vacancy Rate, and Subsidies under Log-Linear Demand with the Consideration of Externalities for a Cruising Taxi Market." Mathematical Problems in Engineering 2017 (2017): 1–11. http://dx.doi.org/10.1155/2017/5192968.
Повний текст джерелаXiong, Shi Yun, Wei Hong Qi, Bai Yun Huang, and Ming Pu Wang. "Size and Dimension Dependent Vacancy Formation Energy of Nanosolids." Advanced Materials Research 268-270 (July 2011): 930–33. http://dx.doi.org/10.4028/www.scientific.net/amr.268-270.930.
Повний текст джерелаKumar, Jeevesh, Adil Meersha, Harsha B. Variar, Abhishek Mishra, and Mayank Shrivastava. "Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETs." IEEE Transactions on Electron Devices 69, no. 4 (April 2022): 2066–73. http://dx.doi.org/10.1109/ted.2022.3151033.
Повний текст джерелаKilpeläinen, S., K. Kuitunen, F. Tuomisto, J. Slotte, E. Bruno, S. Mirabella, and F. Priolo. "Vacancy engineering by He induced nanovoids in crystalline Si." Semiconductor Science and Technology 24, no. 1 (December 5, 2008): 015005. http://dx.doi.org/10.1088/0268-1242/24/1/015005.
Повний текст джерелаZhu, Yue, and Guihua Yu. "Engineering Surface Vacancy to Stabilize High-Voltage Battery Cathodes." Chem 4, no. 7 (July 2018): 1486–87. http://dx.doi.org/10.1016/j.chempr.2018.06.012.
Повний текст джерелаRen, Jie, Chunxiao Zhang, Jin Li, Zhixin Guo, Huaping Xiao, and Jianxin Zhong. "Strain engineering of magnetic state in vacancy-doped phosphorene." Physics Letters A 380, no. 40 (September 2016): 3270–77. http://dx.doi.org/10.1016/j.physleta.2016.07.055.
Повний текст джерелаWang, Qi, Shan Zhang, Hanna He, Chunlin Xie, Yougen Tang, Chuanxin He, Minhua Shao, and Haiyan Wang. "Oxygen Vacancy Engineering in Titanium Dioxide for Sodium Storage." Chemistry – An Asian Journal 16, no. 1 (November 23, 2020): 3–19. http://dx.doi.org/10.1002/asia.202001172.
Повний текст джерелаGuo, Hong, and Jing Wang. "Effect of Vacancy Defects on the Vibration Frequency of Graphene Nanoribbons." Nanomaterials 12, no. 5 (February 24, 2022): 764. http://dx.doi.org/10.3390/nano12050764.
Повний текст джерелаGao, Qin, Wei Luo, Xueying Ma, Zemian Ma, Sijun Li, Fenglin Gou, Wei Shen, Yimin Jiang, Rongxing He, and Ming Li. "Electronic modulation and vacancy engineering of Ni9S8 to synergistically boost efficient water splitting: Active vacancy-metal pairs." Applied Catalysis B: Environmental 310 (August 2022): 121356. http://dx.doi.org/10.1016/j.apcatb.2022.121356.
Повний текст джерелаXu, Xiao, Xing Ding, Xianglong Yang, Pei Wang, Shu Li, Zhexue Lu, and Hao Chen. "Oxygen vacancy boosted photocatalytic decomposition of ciprofloxacin over Bi2MoO6: Oxygen vacancy engineering, biotoxicity evaluation and mechanism study." Journal of Hazardous Materials 364 (February 2019): 691–99. http://dx.doi.org/10.1016/j.jhazmat.2018.10.063.
Повний текст джерелаParedes, J. I., P. Solís-Fernández, A. Martínez-Alonso, and J. M. D. Tascón. "Atomic Vacancy Engineering of Graphitic Surfaces: Controlling the Generation and Harnessing the Migration of the Single Vacancy." Journal of Physical Chemistry C 113, no. 23 (May 13, 2009): 10249–55. http://dx.doi.org/10.1021/jp901578c.
Повний текст джерелаWang, Songcan, Xin Wang, Boyan Liu, Zhaochen Guo, Kostya (Ken) Ostrikov, Lianzhou Wang, and Wei Huang. "Vacancy defect engineering of BiVO4 photoanodes for photoelectrochemical water splitting." Nanoscale 13, no. 43 (2021): 17989–8009. http://dx.doi.org/10.1039/d1nr05691c.
Повний текст джерелаWang, Songcan, Xin Wang, Boyan Liu, Zhaochen Guo, Kostya (Ken) Ostrikov, Lianzhou Wang, and Wei Huang. "Vacancy defect engineering of BiVO4 photoanodes for photoelectrochemical water splitting." Nanoscale 13, no. 43 (2021): 17989–8009. http://dx.doi.org/10.1039/d1nr05691c.
Повний текст джерелаJia, Dongbo, Lili Han, Ying Li, Wenjun He, Caichi Liu, Jun Zhang, Cong Chen, Hui Liu, and Huolin L. Xin. "Optimizing electron density of nickel sulfide electrocatalysts through sulfur vacancy engineering for alkaline hydrogen evolution." Journal of Materials Chemistry A 8, no. 35 (2020): 18207–14. http://dx.doi.org/10.1039/d0ta05594h.
Повний текст джерелаLiu, Qian, Qin Chen, Tianyu Li, Qinhao Ren, Shuxian Zhong, Yuling Zhao, and Song Bai. "Vacancy engineering of AuCu cocatalysts for improving the photocatalytic conversion of CO2 to CH4." Journal of Materials Chemistry A 7, no. 47 (2019): 27007–15. http://dx.doi.org/10.1039/c9ta09938g.
Повний текст джерелаYuhara, S., Yorinobu Takigawa, Tokuteru Uesugi, and Kenji Higashi. "Effect of Co-Doping Cation on Phase Stability of Zirconia Bioceramics in Hot Water." Advanced Materials Research 26-28 (October 2007): 773–76. http://dx.doi.org/10.4028/www.scientific.net/amr.26-28.773.
Повний текст джерелаCheng, Ling, Yuhang Li, Aiping Chen, Yihua Zhu, and Chunzhong Li. "Impacts on carbon dioxide electroreduction of cadmium sulfides via continuous surface sulfur vacancy engineering." Chemical Communications 56, no. 4 (2020): 563–66. http://dx.doi.org/10.1039/c9cc08330h.
Повний текст джерелаMehmood, Rashid, Xiaochun Wang, Pramod Koshy, Jia Lin Yang, and Charles C. Sorrell. "Engineering oxygen vacancies through construction of morphology maps for bio-responsive nanoceria for osteosarcoma therapy." CrystEngComm 20, no. 11 (2018): 1536–45. http://dx.doi.org/10.1039/c8ce00001h.
Повний текст джерелаYang, Li, Li Xiaoyan, and Peng Yao. "The effect of vacancy on the interfacial diffusion in Cu/Sn lead-free solder joints." Soldering & Surface Mount Technology 31, no. 1 (February 18, 2019): 28–39. http://dx.doi.org/10.1108/ssmt-03-2018-0010.
Повний текст джерелаWeng, Zhen Zhen, Zhi Gao Huang, and Wen Xiong Lin. "First-Principles Study on Co-Doped ZnO with Oxygen Vacancy." Advanced Materials Research 154-155 (October 2010): 124–29. http://dx.doi.org/10.4028/www.scientific.net/amr.154-155.124.
Повний текст джерелаLi, Jian. "Effect of Defects on Oscillatory Behaviors of Double-Walled Carbon Nanotube Oscillators." Advanced Materials Research 308-310 (August 2011): 584–88. http://dx.doi.org/10.4028/www.scientific.net/amr.308-310.584.
Повний текст джерелаCai, Yiwei, Zhengli Lu, Xin Xu, Yujia Gao, Tingting Shi, Xin Wang, and Lingling Shui. "Bandgap Engineering of Two-Dimensional Double Perovskite Cs4AgBiBr8/WSe2 Heterostructure from Indirect Bandgap to Direct Bandgap by Introducing Se Vacancy." Materials 16, no. 10 (May 11, 2023): 3668. http://dx.doi.org/10.3390/ma16103668.
Повний текст джерелаLuo, Linfei, Bojun Wang, Jianwei Wang, and Xiaobin Niu. "Vacancy engineering of WO3−x nanosheets for electrocatalytic NRR process – a first-principles study." Physical Chemistry Chemical Physics 23, no. 31 (2021): 16658–63. http://dx.doi.org/10.1039/d1cp01874d.
Повний текст джерелаSun, Zhen Hui, Lan Li Chen, and Zhi Hua Xiong. "Magnetism Driven by Intrinsic Defect in GaN Nanowires." Advanced Materials Research 236-238 (May 2011): 2160–65. http://dx.doi.org/10.4028/www.scientific.net/amr.236-238.2160.
Повний текст джерелаAo, L., A. Pham, H. Y. Xiao, X. T. Zu, and S. Li. "Engineering the electronic and magnetic properties of d0 2D dichalcogenide materials through vacancy doping and lattice strains." Physical Chemistry Chemical Physics 18, no. 10 (2016): 7163–68. http://dx.doi.org/10.1039/c5cp07548c.
Повний текст джерелаJin, C. G., Y. Yang, Z. F. Wu, L. J. Zhuge, Q. Han, X. M. Wu, Y. Y. Li, and Z. C. Feng. "Tunable ferromagnetic behavior in Cr doped ZnO nanorod arrays through defect engineering." J. Mater. Chem. C 2, no. 16 (2014): 2992–97. http://dx.doi.org/10.1039/c4tc00074a.
Повний текст джерелаShamirzaev, Timur S., Victor V. Atuchin, Vladimir E. Zhilitskiy, and Alexander Yu Gornov. "Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated Intrinsic Electrons." Nanomaterials 13, no. 2 (January 11, 2023): 308. http://dx.doi.org/10.3390/nano13020308.
Повний текст джерелаShi, Chunjing, Xiaoli Dong, Jiawei Wang, Xiuying Wang, Hongchao Ma, and Xiufang Zhang. "Interfacial defect engineering over fusiform bismuth vanadate photocatalyst enables to excellent solar-to-chemical energy coupling." RSC Advances 7, no. 43 (2017): 26717–21. http://dx.doi.org/10.1039/c7ra04328g.
Повний текст джерелаBrown, Joshua J., Youxiang Shao, Zhuofeng Ke, and Alister J. Page. "Anion ordering and vacancy defects in niobium perovskite oxynitrides." Materials Advances 2, no. 7 (2021): 2398–407. http://dx.doi.org/10.1039/d1ma00122a.
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