Добірка наукової літератури з теми "Undoped Semiconductors"
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Статті в журналах з теми "Undoped Semiconductors"
Yang, Jin-Peng, Hai-Tao Chen, and Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces." Journal of Applied Physics 131, no. 24 (June 28, 2022): 245501. http://dx.doi.org/10.1063/5.0096697.
Повний текст джерелаFortunato, Elvira, Alexandra Gonçalves, António Marques, Ana Pimentel, Pedro Barquinha, Hugo Águas, Luís Pereira, et al. "Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices." Materials Science Forum 514-516 (May 2006): 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.3.
Повний текст джерелаMa, Yandong, Ying Dai, and Baibiao Huang. "ChemInform Abstract: Ferromagnetism in Undoped Semiconductors." ChemInform 42, no. 42 (September 27, 2011): no. http://dx.doi.org/10.1002/chin.201142213.
Повний текст джерелаSacco, Olga, Antonietta Mancuso, Vincenzo Venditto, Stefania Pragliola, and Vincenzo Vaiano. "Behavior of N-doped TiO2 and N-doped ZnO in Photocatalytic Azo Dye Degradation under UV and Visible Light Irradiation: A Preliminary Investigation." Catalysts 12, no. 10 (October 10, 2022): 1208. http://dx.doi.org/10.3390/catal12101208.
Повний текст джерелаHuang, Danhong, T. Apostolova, P. M. Alsing, and D. A. Cardimona. "Thermal-drag carrier cooling in undoped semiconductors." Journal of Applied Physics 98, no. 6 (September 15, 2005): 063516. http://dx.doi.org/10.1063/1.2041842.
Повний текст джерелаHüsser, O. E., H. von Käanel, and F. Lévy. "Photoelectrochemistry of Doped and Undoped Semiconductors: A Comparison." Journal of The Electrochemical Society 132, no. 4 (April 1, 1985): 810–14. http://dx.doi.org/10.1149/1.2113963.
Повний текст джерелаHossein-Babaei, Faramarz, Saeed Masoumi, and Amirreza Noori. "Seebeck voltage measurement in undoped metal oxide semiconductors." Measurement Science and Technology 28, no. 11 (October 12, 2017): 115002. http://dx.doi.org/10.1088/1361-6501/aa82a4.
Повний текст джерелаBonapasta, Aldo Amore. "Theory of H sites in undoped crystalline semiconductors." Physica B: Condensed Matter 170, no. 1-4 (April 1991): 168–80. http://dx.doi.org/10.1016/0921-4526(91)90120-4.
Повний текст джерелаVishnyakov, N. V. "Formation of Potential Barriers in Undoped Disordered Semiconductors." Semiconductors 39, no. 10 (2005): 1147. http://dx.doi.org/10.1134/1.2085261.
Повний текст джерелаSikam, Pornsawan, Ruhan Thirayatorn, Thanayut Kaewmaraya, Prasit Thongbai, Pairot Moontragoon, and Zoran Ikonic. "Improved Thermoelectric Properties of SrTiO3 via (La, Dy and N) Co-Doping: DFT Approach." Molecules 27, no. 22 (November 16, 2022): 7923. http://dx.doi.org/10.3390/molecules27227923.
Повний текст джерелаДисертації з теми "Undoped Semiconductors"
Mak, Wing Yee. "Transport experiments in undoped GaAs/A1GaAs heterostructures." Thesis, University of Cambridge, 2013. https://www.repository.cam.ac.uk/handle/1810/252296.
Повний текст джерелаAnandan, C. "Metal contacts to undoped a-Si:H: interface modification and Scottky barrier characteristics." Thesis, Cardiff University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314636.
Повний текст джерелаHui, Chun-wai. "Positron annihilation spectroscopic studies of undoped n-type zinc oxide single crystal." Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B38573398.
Повний текст джерелаMa, Shun-kit Martin. "The two gallium vacancy-related defects in undoped gallium antimonide." Click to view the E-thesis via HKUTO, 2004. http://sunzi.lib.hku.hk/hkuto/record/B31319658.
Повний текст джерелаHui, Chun-wai, and 許俊偉. "Positron annihilation spectroscopic studies of undoped n-type zinc oxide single crystal." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B38573398.
Повний текст джерелаMa, Shun-kit Martin, and 馬信傑. "The two gallium vacancy-related defects in undoped gallium antimonide." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B31319658.
Повний текст джерелаChen, Shing Rong, and 陳祥榮. "Temperature Influence on The Energy Band Gap and The Fermi Level for Undoped Semiconductors." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/35616353767997301313.
Повний текст джерела中原大學
應用物理學系
82
A detail fitting method of the metastable semiconductors alloys presented.Alloy composition and temperature are simul- taneously considered together by combined empirical formula of composition and modified temperature terms. This fitting method is based on the least-square technique scheme,and therefore, necessitates known values of the experi- mental data for the related binaries at two ends (for composi- tion;X=0 and X=1) of ternary alloy,which taken as the input data during performing iteration processes.One can decide quantitily that the resultant value of the bowing parameter for band gap is temperature dependence also. If one hopes to study temperature influences on the fermi leevel,it is necessary to calculate the ratio of effective mass of hole and electron at the band edges. In conclusion,it found that temperature influence on the half of the energy band gap and the fermi level for undoped semiconductors are similar to each other.
Lawless, Darren. "Photophysical studies on ultra-small semiconductor particles : CdS quantum dots, doped and undoped TiO₂2, and silver halides." Thesis, 1993. http://spectrum.library.concordia.ca/6080/1/NN84678.pdf.
Повний текст джерелаRay, Biswajit. "Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective." Thesis, 2008. https://etd.iisc.ac.in/handle/2005/741.
Повний текст джерелаRay, Biswajit. "Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective." Thesis, 2008. http://hdl.handle.net/2005/741.
Повний текст джерелаЧастини книг з теми "Undoped Semiconductors"
Tříska, Aleš, Jan Kočka, and Milan Vanĕček. "Density of Gap States in Undoped and Doped Amorphous Hydrogenated Silicon Obtained by Optical Spectroscopy." In Disordered Semiconductors, 459–68. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_50.
Повний текст джерелаYu, P. W. "Persistent Photoluminescence Quenching Effect of 0.77-eV Emission in Undoped Semi-Insulating GaAs." In Proceedings of the 17th International Conference on the Physics of Semiconductors, 747–50. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_166.
Повний текст джерелаHickmott, T. W., P. M. Solomon, F. F. Fang, R. Fischer, and H. Morkoç. "Magnetotunneling and Magnetic Freezeout in n-GaAs-Undoped AlxGa1-xAs-n+GaAs Capacitors." In Proceedings of the 17th International Conference on the Physics of Semiconductors, 417–20. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_92.
Повний текст джерелаBonapasta, Aldo Amore. "Theory of H sites in undoped crystalline semiconductors." In Hydrogen in Semiconductors, 168–80. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50022-x.
Повний текст джерелаTang, X. M., J. Weber, Y. Baer, and F. Finger. "The dispersive diffusion of hydrogen in undoped a-Si:H." In Hydrogen in Semiconductors, 146–48. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50019-x.
Повний текст джерелаDeák, P., L. C. Snyder, M. Heinrich, C. R. Ortiz, and J. W. Corbett. "Hydrogen complexes and their vibrations in undoped crystalline silicon." In Hydrogen in Semiconductors, 253–58. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50035-8.
Повний текст джерелаEPPERLEIN, P. W., and H. P. MEIER. "IMPURITY TRAPPING IN NOMINALLY UNDOPED GaAs/AIGaAs QUANTUM WELLS." In Defect Control in Semiconductors, 1223–28. Elsevier, 1990. http://dx.doi.org/10.1016/b978-0-444-88429-9.50045-8.
Повний текст джерелаMarzouki, Riadh. "The Cuprate Ln2CuO4 (Ln: Rare Earth): Synthesis, Crystallography, and Applications." In Crystal Growth - Technologies and Applications [Working Title]. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.109193.
Повний текст джерелаLabidi, H., K. Zellama, P. Germain, M. Astier, D. Lortigues, J. V. Bardeleben, M. L. Theye, L. Chahed, and C. Godet. "Role of the hydrogen in the light-induced defects in undoped hydrogenated amorphous silicon." In Hydrogen in Semiconductors, 265–68. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50037-1.
Повний текст джерелаRudolph, P., S. Kawasaki, S. Yamashita, S. Yamamoto, Y. Usuki, Y. Konagaya, S. Matada, and T. Fukuda. "Attempts to growth of undoped CdTe single crystals with high electrical resistivity." In Selected Topics in Group IV and II–VI Semiconductors, 28–33. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82411-0.50095-4.
Повний текст джерелаТези доповідей конференцій з теми "Undoped Semiconductors"
Gupta, K. Das, W. Y. Mak, F. Sfigakis, H. E. Beere, I. Farrer, D. A. Ritchie, Jisoon Ihm, and Hyeonsik Cheong. "Ultra-shallow undoped 2DEGs in GaAs-AlGaAs heterostructures." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666389.
Повний текст джерелаSee, Andrew M., Oleh Klochan, Adam P. Micolich, Alex R. Hamilton, Martin Aagesen, Poul E. Lindelof, Jisoon Ihm, and Hyeonsik Cheong. "Fabrication of Undoped AlGaAs∕GaAs Electron Quantum Dots." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666394.
Повний текст джерелаNomura, S. "Negatively charged excitons in a back-gated undoped heterostructure." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994524.
Повний текст джерелаTomimoto, Shinichi, Shinsuke Nozawa, Hiroyuki Kato, Michihiro Sano, Takahiro Matsumoto, Yasuaki Masumoto, Jisoon Ihm, and Hyeonsik Cheong. "Optical electron spin orientation in Ga-doped and undoped ZnO films." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666581.
Повний текст джерелаLilly, M. P. "Weak localization of dilute 2D electrons in undoped GaAs heterostructures." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994179.
Повний текст джерелаEldridge, P. S., W. J. H. Leyland, J. D. Mar, P. G. Lagoudakis, R. Winkler, O. Z. Karimov, M. Henini, et al. "The Absence Of The Rashba Spin-Splitting In Undoped Asymmetric Quantum Wells." In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295469.
Повний текст джерелаIkonnikov, A. V. "Cyclotron Resonance Study of Doped and Undoped InAs/AlSb QW Heterostructures." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994549.
Повний текст джерелаHarris, T. D., and J. I. Colonell. "Quantitative Fluorescence Determination of Impurities in Compound Semiconductors." In Laser Applications to Chemical Analysis. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/laca.1990.tub1.
Повний текст джерелаOzaki, N. "Magnetic Properties of undoped and N-doped Zn1−xCrxTe Grown by MBE." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994130.
Повний текст джерелаHalas, N. J., R. A. Cheville, F. L. P. Chibante, T. R. Ohno, and J. H. Weaver. "Carrier relaxation in undoped C60 solid films." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.thdd4.
Повний текст джерелаЗвіти організацій з теми "Undoped Semiconductors"
Lu, Tzu-Ming, and Lisa A. Tracy. Artificial Graphene in Undoped Semiconductor Heterostructures. Office of Scientific and Technical Information (OSTI), September 2016. http://dx.doi.org/10.2172/1562617.
Повний текст джерела