Добірка наукової літератури з теми "Ultraviolet Photodetector"
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Статті в журналах з теми "Ultraviolet Photodetector"
Xie, Haowei, Chenxu Kang, Muhammad Ahsan Iqbal, Xiaoliang Weng, Kewen Wu, Wei Tang, Lu Qi, and Yu-Jia Zeng. "Ferroelectric Tuning of ZnO Ultraviolet Photodetectors." Nanomaterials 12, no. 19 (September 27, 2022): 3358. http://dx.doi.org/10.3390/nano12193358.
Повний текст джерелаFan, Zelong, Zuoyan Qin, Lei Jin, Yuan Cao, Zhongyu Yue, Baikui Li, Honglei Wu, and Zhenhua Sun. "Aluminum nitride crystal-based photodetector with bias polarity-dependent spectral selectivity." Journal of Vacuum Science & Technology A 41, no. 1 (January 2023): 013204. http://dx.doi.org/10.1116/5.0133162.
Повний текст джерелаYan, Xu, Xueqiang Ji, Jinjin Wang, Chao Lu, Zuyong Yan, Shengrun Hu, Sai Zhang, and Peigang Li. "Improve photo-to-dark current ratio of p-Si/SiO2/n-Ga2O3 heterojunction solar-blind photodetector by inserting SiO2 barrier layer." Journal of Vacuum Science & Technology B 40, no. 5 (September 2022): 052207. http://dx.doi.org/10.1116/5.0107495.
Повний текст джерелаWu, Chao, Huaile He, Haizheng Hu, Aiping Liu, Shunli Wang, Daoyou Guo, and Fengmin Wu. "Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga2O3." Journal of Semiconductors 44, no. 7 (July 1, 2023): 072807. http://dx.doi.org/10.1088/1674-4926/44/7/072807.
Повний текст джерелаLiu, Geng, Liang Yao, Ying Liu, Rongdun Hong, Ruijun Zhang, and Feng Zhang. "Study on SiC UV/EUV Coaxial Photodetector." Journal of Physics: Conference Series 2549, no. 1 (July 1, 2023): 012014. http://dx.doi.org/10.1088/1742-6596/2549/1/012014.
Повний текст джерелаKaawash, N. M. S., D. I. Halge, V. N. Narwade, J. W. Dadge та K. A. Bogle. "Fabrication of Near Ultraviolet Photodetector using α-Fe2O3 Thin FilmSynthesized via Spray Coating Technique". Journal of Physics: Conference Series 2426, № 1 (1 лютого 2023): 012011. http://dx.doi.org/10.1088/1742-6596/2426/1/012011.
Повний текст джерелаGrahn, Holger T. "Nonpolar-Oriented GaN Films for Polarization-Sensitive and Narrow-Band Photodetectors." MRS Bulletin 34, no. 5 (May 2009): 341–47. http://dx.doi.org/10.1557/mrs2009.97.
Повний текст джерелаZhou, Guigang, Huancheng Zhao, Xiangyang Li, Zhenhua Sun, Honglei Wu, Ling Li, Hua An, Shuangchen Ruan, and Zhengchun Peng. "Highly-Responsive Broadband Photodetector Based on Graphene-PTAA-SnS2 Hybrid." Nanomaterials 12, no. 3 (January 29, 2022): 475. http://dx.doi.org/10.3390/nano12030475.
Повний текст джерелаYou, Jie, Yichi Zhang, Maolong Yang, Bo Wang, Huiyong Hu, Zimu Wang, Jinze Li, Hao Sun, and Liming Wang. "Ultraviolet-Visible-Near Infrared Broadband Photodetector Based on Electronspun Disorder ZnO Nanowires/Ge Quantum Dots Hybrid Structure." Crystals 12, no. 2 (January 25, 2022): 172. http://dx.doi.org/10.3390/cryst12020172.
Повний текст джерелаFong, Chee Yong, Sha Shiong Ng, NurFahana Mohd Amin, Fong Kwong Yam, and Zainuriah Hassan. "Sol-gel-derived gallium nitride thin films for ultraviolet photodetection." Microelectronics International 36, no. 1 (January 7, 2019): 8–13. http://dx.doi.org/10.1108/mi-12-2017-0074.
Повний текст джерелаДисертації з теми "Ultraviolet Photodetector"
Liddar, Harsheetal. "Development of a Hybrid Molecular Ultraviolet Photodetector based on Guanosine Derivatives." Thesis, University of North Texas, 2005. https://digital.library.unt.edu/ark:/67531/metadc5586/.
Повний текст джерелаБондаренко, Роман Іванович. "Вимірювач ультрафіолетового випромінювання". Master's thesis, КПІ ім. Ігоря Сікорського, 2020. https://ela.kpi.ua/handle/123456789/40355.
Повний текст джерелаThis thesis is devoted to the developers of ultraviolet radiation meters, in the case of using an updated photographic film based on the surface-bar structure p-Cu1.8S / n-CdS with a photosensitive component based on cadmium sulfide CdS. The review of scientific and technical information about ultraviolet detectors and materials that provide the development of primary transducers as separate types of devices and devices, their main parameters and characteristics, confirmed by promising development. The scheme of the electric structural scheme of the electric basis is developed and the modeling of the printed circuit board in the KiCad EDA software environment is carried out. Developed software in the AtmelStudio7 software environment. The conversation about ourselves was also expanded.
Carrano, John Con. "High-performance ultraviolet photodetectors fabricated on single-crystal GaN /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
Повний текст джерелаLi, Ting. "Gallium nitride and aluminum gallium nitride-based ultraviolet photodetectors /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.
Повний текст джерелаAfal, Aysegul. "Hydrothermal Method For Doping Of Zinc Oxide Nanowires And Fabrication Of Ultraviolet Photodetectors." Master's thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12614463/index.pdf.
Повний текст джерелаMallampati, Bhargav. "Development of High Gain Ultraviolet Photo Detectors Based on Zinc Oxide Nanowires." Thesis, University of North Texas, 2014. https://digital.library.unt.edu/ark:/67531/metadc500106/.
Повний текст джерелаZhou, Yi Park Minseo. "Bulk gallium nitride based electronic devices Schottky diodes, Schottky-type ultraviolet photodetectors and metal-oxide-semiconductor capacitors /." Auburn, Ala., 2007. http://hdl.handle.net/10415/1401.
Повний текст джерелаBiondo, Stéphane. "Simulation, réalisation et caractérisation de jonction p+n en SiC-4H, pour la photodétection de rayonnement UV." Thesis, Aix-Marseille, 2012. http://www.theses.fr/2012AIXM4340.
Повний текст джерелаSilicon carbide is a wide band-gap semiconductor with electrical and thermal characteristics particularly suitable for high power devices and radiation sensors. The realisation of UV detectors is mainly useful in the following sectors: fire detection, surface imagery, astronomy, medicine, military... The photodetectors based on wide band-gap semiconductors allow to get a very good selectivity, without using optical filters. Silicon carbide seems to be the most promising material, due to its chemical, mechanical and thermal stability, inducing a reliable behaviour in extreme environment. However SiC doping requires a distinct know-how (hot ion implantation, high temperature annealing, rapid heating-rate…). Test devices have been firstly processed by using ion implantation and plasma, allowing evaluating p+n or n+p junction characteristics. After the optimisation of the technological parameters of implantation and related annealing, the realisation of radiation detectors based on Schottky or p.n diodes has been carried out. The electrical simulations of such devices were performed with Sentaurus Devices program (Synopsys). The characteristics of the devices proved an improvement with the Boron-plasma implantation
Ates, Elif Selen. "Hydrothermally Grown Zinc Oxide Nanowires And Their Utilization In Light Emitting Diodes And Photodetectors." Master's thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12614374/index.pdf.
Повний текст джерелаByrum, Laura E. "Analysis of GaN/AlxGa1−xN Heterojunction Dual-Band Photodetectors Using Capacitance Profiling Techniques." Digital Archive @ GSU, 2009. http://digitalarchive.gsu.edu/phy_astr_theses/6.
Повний текст джерелаЧастини книг з теми "Ultraviolet Photodetector"
Natasha, Adnin Tazrih, Xiaohu Chen, Binesh Puthen Veettil, and Noushin Nasiri. "Wearable Ultraviolet Photodetector for Real Time UV Index Monitoring." In Sensing Technology, 238–50. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-29871-4_24.
Повний текст джерелаCarrano, John C. "III-Nitride Ultraviolet Photodetectors." In III-V Nitride Semiconductors, 593–674. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367813628-13.
Повний текст джерелаBrendel, Moritz, Enrico Pertzsch, Vera Abrosimova, Torsten Trenkler, and Markus Weyers. "Solar- and Visible-Blind AlGaN Photodetectors." In III-Nitride Ultraviolet Emitters, 219–66. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24100-5_9.
Повний текст джерелаRigutti, Lorenzo, and Maria Tchernycheva. "GaN Nanowire-Based Ultraviolet Photodetectors." In Wide Band Gap Semiconductor Nanowires 2, 179–202. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118984291.ch8.
Повний текст джерелаFoisal, Abu Riduan Md, Toan Dinh, Philip Tanner, Hoang-Phuong Phan, Tuan-Khoa Nguyen, Alan Iacopi, Erik W. Streed, and Dzung Viet Dao. "Ultraviolet and Visible Photodetection Using 3C-SiC/Si Hetero-Epitaxial Junction." In Sustainable Design and Manufacturing 2018, 208–16. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-04290-5_22.
Повний текст джерелаLiao, Mei Yong, and Yasuo Koide. "Visible-Blind Metal-Semiconductor-Metal Structured Deep-Ultraviolet Photodetectors Using Single-Crystalline Diamond Thin Film." In Materials Science Forum, 1759–62. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-432-4.1759.
Повний текст джерелаMiller, Ruth A., Hongyun So, Thomas A. Heuser, Ananth Saran Yalamarthy, Peter F. Satterthwaite, and Debbie G. Senesky. "Ultraviolet detectors for harsh environments." In Photodetectors, 267–91. Elsevier, 2023. http://dx.doi.org/10.1016/b978-0-08-102795-0.00008-6.
Повний текст джерелаG., D., and D. S. "GaN Based Ultraviolet Photodetectors." In Photodiodes - World Activities in 2011. InTech, 2011. http://dx.doi.org/10.5772/19172.
Повний текст джерелаTemkin, H. "Ultraviolet Photodetectors based on GaN and AlGaN." In Advanced Semiconductor and Organic Nano-Techniques, 147–90. Elsevier, 2003. http://dx.doi.org/10.1016/b978-012507060-7/50017-9.
Повний текст джерелаSharma, Pankaj, and Shaibal Mukherjee. "Recent Advances in ZnO Based Ultraviolet Photodetectors." In Reference Module in Materials Science and Materials Engineering. Elsevier, 2018. http://dx.doi.org/10.1016/b978-0-12-803581-8.10385-6.
Повний текст джерелаТези доповідей конференцій з теми "Ultraviolet Photodetector"
DE SIO, A., F. MONTI, F. MALVEZZI, E. BURATTINI, A. MARCELLI, and E. PACE. "ULTRAVIOLET DIAMOND PHOTODETECTOR." In Proceedings of the 9th Conference. WORLD SCIENTIFIC, 2006. http://dx.doi.org/10.1142/9789812773678_0028.
Повний текст джерелаLiu, Xin, Danhao Wang, Huabin Yu, Muhammad Hunain Memon, and Haiding Sun. "Polarity-Switchable Ultraviolet Photodetector Towards Spectrum-Distinguishable Photodetection." In CLEO: Applications and Technology. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/cleo_at.2021.jw1a.42.
Повний текст джерелаQin, Yue, Dingbang Ma, Ying Wang, Changrui Liao, and Yiping Wang. "A probe-type fiber optic ultraviolet photodetector." In European Workshop on Optical Fibre Sensors (EWOFS 2023), edited by Marc Wuilpart and Christophe Caucheteur. SPIE, 2023. http://dx.doi.org/10.1117/12.2681883.
Повний текст джерелаMuller, A., G. Konstantinidis, M. Dragoman, D. Neculoiu, A. Dinescu, M. Androulidaki, M. Kayambaki, et al. "Ultraviolet MSM photodetector based on GaN micromachining." In 2008 International Semiconductor Conference. IEEE, 2008. http://dx.doi.org/10.1109/smicnd.2008.4703336.
Повний текст джерелаCong, Mingyu, Yuhan Duan, Dayong Jiang, Zexuan Guo, Xuan Zhou, Nan Hu, and Kun Yu. "ZnO ultraviolet photodetector based metal-semiconductor-metal structure." In Young Scientists Forum 2017, edited by Songlin Zhuang, Junhao Chu, and Jian-Wei Pan. SPIE, 2018. http://dx.doi.org/10.1117/12.2317793.
Повний текст джерелаAnas, M., A. Basir, A. Manut, M. Hafiz Mamat, Rosmalini Abdul Kadir, A. Sabirin Zoolfakar, Rozina Abdul Rani, and M. Rusop. "Platinum (Pt) doped Nb2O5 for Enhancing Ultraviolet Photodetector." In 2018 IEEE International Conference on Semiconductor Electronics (ICSE). IEEE, 2018. http://dx.doi.org/10.1109/smelec.2018.8481304.
Повний текст джерелаGhazai, A. J., S. M. Thahab, H. Abu Hassan, Z. Hassan, and A. SH Hussein. "AlInGaN based ultraviolet photodetector with Au contact electrodes." In 2ND ASEAN - APCTP WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY: (AMSN 2010). AIP, 2012. http://dx.doi.org/10.1063/1.4732488.
Повний текст джерелаWu, Jingda, and Lih Lin. "Flexible ZnO Nanocrystal Ultraviolet Photodetector on Bio-membrane." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/cleo_si.2014.sth4i.8.
Повний текст джерелаHuang, Bo, Guan-nan He, Yue-bo Wu, Liang-tang Zhang, Jing Li, Dong-hui Guo, and Sun-tao Wu. "Fabrication of ZnO thin film Schottky ultraviolet photodetector." In 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, edited by Li Yang, Yaolong Chen, Ernst-Bernhard Kley, and Rongbin Li. SPIE, 2007. http://dx.doi.org/10.1117/12.783033.
Повний текст джерелаGao, Yifan, Mengru Zhu, Xinyue Chen, Zikang Han, Chifeng Song, Keyang Zhang, and Zhiwei Zhao. "Performance Study of Flexible Solar-blind Ultraviolet Photodetector." In 2022 5th International Conference on Electronics and Electrical Engineering Technology (EEET). IEEE, 2022. http://dx.doi.org/10.1109/eeet58130.2022.00045.
Повний текст джерелаЗвіти організацій з теми "Ultraviolet Photodetector"
Sandvik, Peter, Stanislav Soloviev, Alexey Vert, Alexander Bolotnikov, James McMahon, and Joe Campbell. SiC Deep Ultraviolet Avalanche Photodetectors. Fort Belvoir, VA: Defense Technical Information Center, October 2010. http://dx.doi.org/10.21236/ada545370.
Повний текст джерела