Готові списки джерел за темами / Ultraviolet Photodetector

Добірка наукової літератури з теми "Ultraviolet Photodetector"

Автор: Grafiati
Опубліковано: 6 вересня 2023
Оновлено: 11 вересня 2023

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Статті в журналах з теми "Ultraviolet Photodetector"

1

Xie, Haowei, Chenxu Kang, Muhammad Ahsan Iqbal, Xiaoliang Weng, Kewen Wu, Wei Tang, Lu Qi, and Yu-Jia Zeng. "Ferroelectric Tuning of ZnO Ultraviolet Photodetectors." Nanomaterials 12, no. 19 (September 27, 2022): 3358. http://dx.doi.org/10.3390/nano12193358.

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The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP2S6 (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 104 A/W and 7.17 × 1011 Jones, respectively. This strategy was also applied to a ZnO film UV photodetector that was tuned by a P(VDF-TrFE) ferroelectric gate. Lower power consumption and higher performance can be enabled by ferroelectric tuning of ZnO ultraviolet photodetectors, providing new inspiration for the fabrication of high-performance photodetectors.
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Fan, Zelong, Zuoyan Qin, Lei Jin, Yuan Cao, Zhongyu Yue, Baikui Li, Honglei Wu, and Zhenhua Sun. "Aluminum nitride crystal-based photodetector with bias polarity-dependent spectral selectivity." Journal of Vacuum Science & Technology A 41, no. 1 (January 2023): 013204. http://dx.doi.org/10.1116/5.0133162.

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Visible-blind ultraviolet-selective photodetection and ultraviolet-visible broad spectral photodetection are two essential functions eagerly pursued in each application area. However, they usually cannot be realized simultaneously in a bare photodetector because their different underlying photoexcitation processes would interfere with each other. In this work, a photodetector integrating the two distinct photodetector characteristics is presented. The device is prepared based on the heterojunction of a large-scale aluminum nitride bulk crystal and monolayer graphene. The visible-blind ultraviolet-selective photodetection and the ultraviolet-visible broad spectral photodetection are separately manifested in the device depending on the bias polarity. Under a negative bias, the device is a visible-blind deep-ultraviolet photodetector, demonstrating a 193/785 nm rejection ratio of over 106 for the photocurrent and a 193/405 nm rejection ratio of over 103 for the signal/noise ratio. Under a positive bias, the device performs as a broad spectral photodetector responding to light from 193 to 785 nm. Systematical characterization reveals that different photodetection manners are the synergistical results of the different photon energies of the incident light, wavelength-dependent penetration depths in AlN, and the different working modes of the device under different bias conditions. This work provides a particular dual-functional photodetector, which is of great significance in terms of both application and device physics.
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Yan, Xu, Xueqiang Ji, Jinjin Wang, Chao Lu, Zuyong Yan, Shengrun Hu, Sai Zhang, and Peigang Li. "Improve photo-to-dark current ratio of p-Si/SiO2/n-Ga2O3 heterojunction solar-blind photodetector by inserting SiO2 barrier layer." Journal of Vacuum Science & Technology B 40, no. 5 (September 2022): 052207. http://dx.doi.org/10.1116/5.0107495.

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Анотація:
In this study, the solar-blind ultraviolet photodetectors based on p-Si/Ga2O3 and p-Si/SiO2/n-Ga2O3 heterojunctions were fabricated by metalorganic chemical vapor deposition, respectively. Benefitting from the electron-blocking ability of SiO2 dielectric layer insertion, p-Si/SiO2/n-Ga2O3 photodetectors exhibit a very low dark current of 1.14 × 10−12 A, which is 4 orders of magnitude lower than p-Si/Ga2O3 photodetectors (3.22 × 10−8 A). At the same time, a high photo-to-dark current ratio (1.81 × 105) of p-Si/SiO2/n-Ga2O3 photodetectors was obtained under UV light (λ = 254 nm) at −15 V. Meanwhile, the p-Si/SiO2/n-Ga2O3 devices express better photodetection performance, in which the responsivity and EQE are about two times more than that of p-Si/Ga2O3 photodetectors. Furthermore, the photodetector was found to possess impressive photodetection stabilities. Our results indicate that the p-Si/SiO2/n-Ga2O3 photodetector is an excellent candidate for high-sensitivity, ultrafast response solar-blind UV light detection.
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Wu, Chao, Huaile He, Haizheng Hu, Aiping Liu, Shunli Wang, Daoyou Guo, and Fengmin Wu. "Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga2O3." Journal of Semiconductors 44, no. 7 (July 1, 2023): 072807. http://dx.doi.org/10.1088/1674-4926/44/7/072807.

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Abstract Gallium oxide (Ga2O3) based flexible heterojunction type deep ultraviolet (UV) photodetectors show excellent solar-blind photoelectric performance, even when not powered, which makes them ideal for use in intelligent wearable devices. However, traditional flexible photodetectors are prone to damage during use due to poor toughness, which reduces the service life of these devices. Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga2O3 could potentially improve the lifetime of the flexible photodetectors while maintaining their performance. Herein, a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate, which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT: PSS/Ga2O3 heterojunction. The self-healing of the Ga2O3 based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network, which allows the photodetector to recover its original configuration and function after damage. After self-healing, the photocurrent of the photodetector decreases from 1.23 to 1.21 μA, while the dark current rises from 0.95 to 0.97 μA, with a barely unchanged of photoresponse speed. Such a remarkable recovery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.
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Liu, Geng, Liang Yao, Ying Liu, Rongdun Hong, Ruijun Zhang, and Feng Zhang. "Study on SiC UV/EUV Coaxial Photodetector." Journal of Physics: Conference Series 2549, no. 1 (July 1, 2023): 012014. http://dx.doi.org/10.1088/1742-6596/2549/1/012014.

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Abstract In this paper, a novel 4H-SiC coaxial p-i-n ultraviolet photodetector with intense photon absorption and high quantum efficiency is studied. The spectral response and electric field distribution of the detector are calculated by TCAD software. The results showed that the innovative 4H-SiC ultraviolet coaxial p-i-n photodetector has a spectral response peak of 0.1998 A/W at 260 nm illumination wavelength and has more than twice response higher than the traditional 4H-SiC p-i-n photodetector, when the illumination wavelength is under 270 nm. The quantum efficiency of the coaxial photodetector reaches 95.3%. Moreover, in the wavelength range of EUV, the 4H-SiC ultraviolet coaxial photodetector shows a relatively high response, while the response is barely observed for the traditional 4H-SiC p-i-n photodetector. For the large area coaxial p-i-n photodetector, the problem of laterally undepleted i layer can be solved by multiple P+-type implanation. The new structure significantly enhances the rate of incident light absorption, prevents the light absorption of the conventional metal electrode and P+ layer, and provides an innovative approach for the construction of ultraviolet photodetectors in the future.
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Kaawash, N. M. S., D. I. Halge, V. N. Narwade, J. W. Dadge та K. A. Bogle. "Fabrication of Near Ultraviolet Photodetector using α-Fe2O3 Thin FilmSynthesized via Spray Coating Technique". Journal of Physics: Conference Series 2426, № 1 (1 лютого 2023): 012011. http://dx.doi.org/10.1088/1742-6596/2426/1/012011.

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Abstract A UV photodetector was created using a spray-deposited α-Fe2O3 thin film on a glass substrate at 160 °C. The film’s thickness was approximately 110 nm. With a near UV light at a wavelength of 340 nm and an intensity of 140 µW/cm2, the photosensitivity of an individual α-Fe2O3 thin film photodetector was greater than 40%. An individual α-Fe2O3 thin film-based photodetector’s rapid photoresponse time of 1.6 ms and responsivity of ~ 1 mA/W can be attributed to the band gap and chemisorption of oxygen on the film’s surface. The photodetectors’ simple, low-cost, and large-scale fabrication demonstrates the fabrication of a stable, reversible, and rapid photo-responsive photodetector for near UV wavelength.
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Grahn, Holger T. "Nonpolar-Oriented GaN Films for Polarization-Sensitive and Narrow-Band Photodetectors." MRS Bulletin 34, no. 5 (May 2009): 341–47. http://dx.doi.org/10.1557/mrs2009.97.

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AbstractThis article reviews the optical polarization properties of unstrained and strained GaN films with a nonpolar orientation. In unstrained a -plane GaN films, the A exciton becomes completely linearly polarized perpendicular to the c-axis, whereas the B and C excitons are only partially polarized. In m -plane or a -plane GaN films under anisotropic in-plane compressive strain, all three interband transitions between the three uppermost valence bands and the conduction band can become linearly polarized for sufficiently large strain values. The complete linear polarization can be directly observed in reflection, transmission, or photoreflectance by a polarization-dependent energy gap. This complete linear polarization can be used to realize polarization-sensitive photodetectors in the ultraviolet spectral range, which do not need a polarization filter in front of the photodetector. By combining a polarization filter and photodetector or two photodetectors from the same material with their c-axes oriented perpendicular to each other, a narrowband photodetection configuration can be achieved in the ultraviolet spectral range with a band width below 8 nm. Since both realizations are also polarization sensitive, a configuration with four photodetectors is necessary to achieve narrow-band sensitivity regardless of the polarization state of the incident light. At the same time, the configuration with four photodetectors allows for the determination of the absolute angle of polarization.
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Zhou, Guigang, Huancheng Zhao, Xiangyang Li, Zhenhua Sun, Honglei Wu, Ling Li, Hua An, Shuangchen Ruan, and Zhengchun Peng. "Highly-Responsive Broadband Photodetector Based on Graphene-PTAA-SnS2 Hybrid." Nanomaterials 12, no. 3 (January 29, 2022): 475. http://dx.doi.org/10.3390/nano12030475.

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The development of wearable systems stimulate the exploration of flexible broadband photodetectors with high responsivity and stability. In this paper, we propose a facile liquid-exfoliating method to prepare SnS2 nanosheets with high-quality crystalline structure and optoelectronic properties. A flexible photodetector is fabricated using the SnS2 nanosheets with graphene-poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine (PTAA) hybrid structure. The liquid-exfoliated SnS2 nanosheets enable the photodetection from ultraviolet to near infrared with high responsivity and detectivity. The flexible broadband photodetector demonstrates a maximum responsivity of 1 × 105 A/W, 3.9 × 104 A/W, 8.6 × 102 A/W and 18.4 A/W under 360 nm, 405 nm, 532 nm, and 785 nm illuminations, with specific detectivity up to ~1012 Jones, ~1011 Jones, ~109 Jones, and ~108 Jones, respectively. Furthermore, the flexible photodetector exhibits nearly invariable performance over 3000 bending cycles, rendering great potentials for wearable applications.
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You, Jie, Yichi Zhang, Maolong Yang, Bo Wang, Huiyong Hu, Zimu Wang, Jinze Li, Hao Sun, and Liming Wang. "Ultraviolet-Visible-Near Infrared Broadband Photodetector Based on Electronspun Disorder ZnO Nanowires/Ge Quantum Dots Hybrid Structure." Crystals 12, no. 2 (January 25, 2022): 172. http://dx.doi.org/10.3390/cryst12020172.

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Ultraviolet-visible-near infrared broadband photodetectors have significant prospects in many fields such as image sensing, communication, chemical sensing, and day and nighttime surveillance. Hybrid one-dimensional (1D) and zero-dimensional (0D) materials are attractive for broadband-responsive photodetectors since its unique charges transfer characteristics and facile fabrication processes. Herein, a Si/ZnO nanowires/Ge quantum dots photodetector has been constructed via processes that combined electrospinning and spin-coating methods. A broadband response behavior from ultraviolet to near-infrared (from 250 to 1550 nm) is observed. The responsivity of the hybrid structure increases around three times from 550 to 1100 nm compared with the pure Si photodetector. Moreover, when the photodetector is illuminated by a light source exceeding 1100 nm, such as 1310 and 1550 nm, there is also a significant photoresponse. Additionally, the ZnO NWs/Ge quantum dots heterostructure is expected to be used in flexible substrates, which benefits from electrospinning and spin-coating processes. The strategy that combines 1D ZnO NWs and 0D solution-processed Ge QDs nanostructures may open a new avenue for flexible and broadband photodetector.
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Fong, Chee Yong, Sha Shiong Ng, NurFahana Mohd Amin, Fong Kwong Yam, and Zainuriah Hassan. "Sol-gel-derived gallium nitride thin films for ultraviolet photodetection." Microelectronics International 36, no. 1 (January 7, 2019): 8–13. http://dx.doi.org/10.1108/mi-12-2017-0074.

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Purpose This study aims to explore the applicability of the sol-gel-derived GaN thin films for UV photodetection. Design/methodology/approach GaN-based ultraviolet (UV) photodetector with Pt Schottky contacts was fabricated and its applicability was investigated. The current-voltage (I-V) characteristics of the GaN-based UV photodetector under the dark current and photocurrent were measured. Findings The ideality factors of GaN-based UV photodetector under dark current and photocurrent were 6.93 and 5.62, respectively. While the Schottky barrier heights (SBH) for GaN-based UV photodetector under dark current and photocurrent were 0.35 eV and 0.34 eV, respectively. The contrast ratio and responsivity of this UV photodetector measured at 5 V were found to be 1.36 and 1.68 μA/W, respectively. The photoresponse as a function of time was measured by switching the UV light on and off continuously at different forward biases of 1, 3 and 6 V. The results showed that the fabricated UV photodetector has reasonable stability and repeatability. Originality/value This work demonstrated that GaN-based UV photodetector can be fabricated by using the GaN thin film grown by low-cost and simple sol-gel spin coating method.
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Більше джерел

Дисертації з теми "Ultraviolet Photodetector"

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Liddar, Harsheetal. "Development of a Hybrid Molecular Ultraviolet Photodetector based on Guanosine Derivatives." Thesis, University of North Texas, 2005. https://digital.library.unt.edu/ark:/67531/metadc5586/.

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Modern studies on charge transfer reaction and conductivity measurements of DNA have shown that the electrical behavior of DNA ranges from that of an insulator to that of a wide bandgap semiconductor. Based on this property of DNA, a metal-semiconductor-metal photodetector is fabricated using a self-assembled layer of deoxyguanosine derivative (DNA base) deposited between gold electrodes. The electrodes are lithographically designed on a GaN substrate separated by a distance L (50nm < L < 100nm). This work examines the electrical and optical properties of such wide-bandgap semiconductor based biomaterial systems for their potential application as photodetectors in the UV region wherein most of the biological agents emit. The objective of this study was to develop a biomolecular electronic device and design an experimental setup for electrical and optical characterization of a novel hybrid molecular optoelectronic material system. AFM results proved the usage of Ga-Polar substrate in conjugation with DG molecules to be used as a potential electronic based sensor. A two-terminal nanoscale biomolectronic diode has been fabricated showing efficient rectification ratio. A nanoscale integrated ultraviolet photodetector (of dimensions less than 100 nm) has been fabricated with a cut-off wavelength at ~ 320 nm.
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2

Бондаренко, Роман Іванович. "Вимірювач ультрафіолетового випромінювання". Master's thesis, КПІ ім. Ігоря Сікорського, 2020. https://ela.kpi.ua/handle/123456789/40355.

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Дана дипломна робота присвячена розробці вимірювача ультрафіолетового випромінювання, в якому використовується розроблений фотодіод на основі поверхнево-бар’єрної структури p-Cu1.8S/n-CdS з фоточутливою складовою на основі сульфіду кадмію CdS. В роботі представлений огляд науково-технічної інформації про детектори ультрафіолетового випромінювання та матеріали, які використовують для розробки первинних перетворювачів як окремих різновидів приладів та пристроїв, їх основні параметри та характеристики, підтверджена перспективність розробки. Розроблена схема електрична структурна схема електрична принципова та проведено моделювання печатної плати в програмному середовищі KiCad EDA., на основі чого був проведений підбір елементів схеми та компонування. Розроблено програмне забезпечення в програмному середовищі AtmelStudio7. Також був проведений розрахунок собівартості приладу.
This thesis is devoted to the developers of ultraviolet radiation meters, in the case of using an updated photographic film based on the surface-bar structure p-Cu1.8S / n-CdS with a photosensitive component based on cadmium sulfide CdS. The review of scientific and technical information about ultraviolet detectors and materials that provide the development of primary transducers as separate types of devices and devices, their main parameters and characteristics, confirmed by promising development. The scheme of the electric structural scheme of the electric basis is developed and the modeling of the printed circuit board in the KiCad EDA software environment is carried out. Developed software in the AtmelStudio7 software environment. The conversation about ourselves was also expanded.
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3

Carrano, John Con. "High-performance ultraviolet photodetectors fabricated on single-crystal GaN /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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4

Li, Ting. "Gallium nitride and aluminum gallium nitride-based ultraviolet photodetectors /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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5

Afal, Aysegul. "Hydrothermal Method For Doping Of Zinc Oxide Nanowires And Fabrication Of Ultraviolet Photodetectors." Master's thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12614463/index.pdf.

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Nanotechnology comprises of the understanding and control of materials and processes at the nanoscale. Among various nanostructured materials, semiconducting nanowires attract much interest for their novel physical properties and potential device applications. The unique properties of these nanowires are based on their high surface to volume ratio and quantum confinement effect. Zinc oxide, having a direct, wide bandgap and large exciton binding energy, is highly appealing for optoelectronic devices. Due to excellent optical and electrical properties, zinc oxide nanowires have been utilized to fabricate various devices such as solar cells, light emitting diodes, transistors and photodetectors. Furthermore, zinc oxide, in its natural state exhibits n-type conductivity. Addition of impurities often leads to remarkable changes in their electrical and optical properties, which open up new application areas. Among the many synthesis methods for zinc oxide nanowires, hydrothermal method is an attractive one due to its easy procedure, simple equipment and low temperature requirements. In this thesis, zinc oxide nanowires were grown and doped by hydrothermal method. Different metal dopants such as copper, silver and aluminum were used for this purpose. These metals were selected as dopants due to their effect on magnetic properties, p-type conduction and electrical conductivity of ZnO nanowires, respectively. Doped nanowires were fully characterized and the changes in their physical properties were investigated. In addition, hydrothermally synthesized pure and aluminum doped zinc oxide nanowires were used as the electrically active components in ultraviolet photodetectors. Silver nanowires were utilized as transparent electrodes. Optoelectronic properties of the detectors were examined. Effect of in-situ annealing and nanowire length was investigated. Short recovery time, around 4 seconds, with a decent on/off ratio of 2600 was obtained. This design provides a simple and cost effective approach for the fabrication of high performance ultraviolet photodetectors.
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6

Mallampati, Bhargav. "Development of High Gain Ultraviolet Photo Detectors Based on Zinc Oxide Nanowires." Thesis, University of North Texas, 2014. https://digital.library.unt.edu/ark:/67531/metadc500106/.

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Semiconductor nanowires acts as an emerging class of materials with great potential for applications in future electronic devices. Small size, large surface to volume ratio and high carrier mobility of nanowires make them potentially useful for electronic applications with high integration density. In this thesis, the focus was on the growth of high quality ZnO nanowires, fabrication of field effect transistors and UV- photodetectros based on them. Intrinsic nanowire parameters such as carrier concentration, field effect mobility and resistivity were measured by configuring nanowires as field effect transistors. The main contribution of this thesis is the development of a high gain UV photodetector. A single ZnO nanowire functioning as a UV photodetector showed promising results with an extremely high spectral responsivity of 120 kA/W at wavelength of 370 nm. This corresponds to high photoconductive gain of 2150. To the best of our knowledge, this is the highest responsivity and gain reported so far, the previous values being responsivity=40 kA/W and gain=450. The enhanced photoconductive behavior is attributed to the presence of surface states that acts as hole traps which increase the life time of photogenerated electrons raising the photocurrent. This work provides the evidence of such solid states and preliminary results to modify the surface of ZnO nanowire is also produced.
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7

Zhou, Yi Park Minseo. "Bulk gallium nitride based electronic devices Schottky diodes, Schottky-type ultraviolet photodetectors and metal-oxide-semiconductor capacitors /." Auburn, Ala., 2007. http://hdl.handle.net/10415/1401.

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8

Biondo, Stéphane. "Simulation, réalisation et caractérisation de jonction p+n en SiC-4H, pour la photodétection de rayonnement UV." Thesis, Aix-Marseille, 2012. http://www.theses.fr/2012AIXM4340.

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Le SiC est un matériau semi-conducteur à large bande d'énergie interdite dont les très bonnes caractéristiques électriques et thermiques en font un candidat idéal pour la fabrication de composants dans le domaine de la puissance et des détecteurs de rayonnement. En particulier, la réalisation de détecteurs UV est très attendue dans les domaines suivants : détection d'incendies, imagerie de surface, astronomie, médecine, militaire… Les photodétecteurs à base de semiconducteurs à large bande interdite permettent d'obtenir une très bonne sélectivité dans l'UV, sans avoir à utiliser de filtres optiques. Le SiC semble être le matériau le plus prometteur, grâce à sa bonne stabilité chimique, mécanique et thermique, ce qui représente un avantage pour opérer en environnement extrême. Cependant le dopage du SiC nécessite un savoir-faire très particulier (implantation à chaud, recuit à haute température, forte dynamique de chauffe…). Nous nous sommes proposés dans un premier temps de réaliser par implantation (ionique et plasma) des composants tests, permettant d'accéder aux caractéristiques des jonctions. Le cas des jonctions implantées n+p et p+n a été étudié. Après l'optimisation des paramètres technologiques de l'implantation et du recuit associé, la fabrication de détecteurs de rayonnement basés sur la diode Schottky ou la diode p.n a été mise en œuvre. Une étape de simulation de ces composants a été effectuée sur le logiciel Sentaurus Device (Synopsys). Les caractérisations de ces détecteurs ont montré une meilleure sensibilité pour les diodes implantées Bore par plasma
Silicon carbide is a wide band-gap semiconductor with electrical and thermal characteristics particularly suitable for high power devices and radiation sensors. The realisation of UV detectors is mainly useful in the following sectors: fire detection, surface imagery, astronomy, medicine, military... The photodetectors based on wide band-gap semiconductors allow to get a very good selectivity, without using optical filters. Silicon carbide seems to be the most promising material, due to its chemical, mechanical and thermal stability, inducing a reliable behaviour in extreme environment. However SiC doping requires a distinct know-how (hot ion implantation, high temperature annealing, rapid heating-rate…). Test devices have been firstly processed by using ion implantation and plasma, allowing evaluating p+n or n+p junction characteristics. After the optimisation of the technological parameters of implantation and related annealing, the realisation of radiation detectors based on Schottky or p.n diodes has been carried out. The electrical simulations of such devices were performed with Sentaurus Devices program (Synopsys). The characteristics of the devices proved an improvement with the Boron-plasma implantation
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Ates, Elif Selen. "Hydrothermally Grown Zinc Oxide Nanowires And Their Utilization In Light Emitting Diodes And Photodetectors." Master's thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12614374/index.pdf.

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Zinc oxide, with its direct wide bandgap and high exciton binding energy, is a promising material for optoelectronic devices. Quantum confinement effect and high surface to volume ratio of the nanowires imparts unique properties to them and makes them appealing for researchers. So far, zinc oxide nanowires have been used to fabricate various optoelectronic devices such as light emitting diodes, solar cells, sensors and photodetectors. To fabricate those optoelectronic devices, many different synthesis methods such as metal organic chemical vapor deposition, chemical vapor deposition, pulsed laser deposition, electrodeposition and hydrothermal method have been explored. Among them, hydrothermal method is the most feasible one in terms of simplicity and low cost. In this thesis, hydrothermal method was chosen to synthesize zinc oxide nanowires. Synthesized zinc oxide nanowires were then used as electrically active components in light emitting diodes and ultraviolet photodetectors. Hybrid light emitting diodes, composed of inorganic/organic hybrids are appealing due to their flexibility, lightweight nature and low cost production methods. Beside the zinc oxide nanowires, complementary poly [2- methoxy -5- (2- ethylhexyloxy) - 1,4 -phenylenevinylene] MEH-PPV and poly (9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) hole conducting polymers were used to fabricate hybrid light emitting diodes in this work. Optoelectronic properties of the fabricated light emitting diodes were investigated. Zinc oxide emits light within a wide range in the visible region due to its near band edge and deep level emissions. Utilizing this property, violet-white light emitting diodes were fabricated and characterized. Moreover, to take advantage over the responsivity of zinc oxide to ultraviolet light, ultraviolet photodetectors utilizing hydrothermally grown zinc oxide nanowires were fabricated. Single walled carbon nanotube (SWNT) thin films were used as transparent electrodes for the photodetectors. Optoelectronic properties of the transparent and flexible devices were investigated. A high on-off current ratio around 260000 and low decay time about 16 seconds were obtained. Results obtained in this thesis reveal the great potential of the use of solution grown zinc oxide nanowires in various optoelectronic devices that are flexible and transparent.
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Byrum, Laura E. "Analysis of GaN/AlxGa1−xN Heterojunction Dual-Band Photodetectors Using Capacitance Profiling Techniques." Digital Archive @ GSU, 2009. http://digitalarchive.gsu.edu/phy_astr_theses/6.

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Capacitance-voltage-frequency measurements on n+-GaN/AlxGa1−xN UV/IR dual-band detectors are reported. The presence of shallow Si-donor, deep Si-donor, and C-donor/N-vacancy defect states were found to significantly alter the electrical characteristics of the detectors. The barrier Al fraction was found to change the position of the interface defect states relative to the Fermi level. The sample with Al fraction of 0.1 shows a distinct capacitance-step and hysteresis, which is attributed to C-donor/N-vacancy electron trap states located above the Fermi level (200 meV) at the heterointerface; whereas, the sample with Al fraction of 0.026 shows negative capacitance and dispersion, indicating C-donor/N-vacancy and deep Si-donor defect states located below the Fermi level (88 meV). When an i-GaN buffer layer was added to the structure, an anomalous high-frequency capacitance peak was observed and attributed to resonance scattering due to hybridization of localized Si-donor states in the band gap with conduction band states at the i-GaN/n+-GaN interface.
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Частини книг з теми "Ultraviolet Photodetector"

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Natasha, Adnin Tazrih, Xiaohu Chen, Binesh Puthen Veettil, and Noushin Nasiri. "Wearable Ultraviolet Photodetector for Real Time UV Index Monitoring." In Sensing Technology, 238–50. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-29871-4_24.

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2

Carrano, John C. "III-Nitride Ultraviolet Photodetectors." In III-V Nitride Semiconductors, 593–674. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367813628-13.

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3

Brendel, Moritz, Enrico Pertzsch, Vera Abrosimova, Torsten Trenkler, and Markus Weyers. "Solar- and Visible-Blind AlGaN Photodetectors." In III-Nitride Ultraviolet Emitters, 219–66. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24100-5_9.

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4

Rigutti, Lorenzo, and Maria Tchernycheva. "GaN Nanowire-Based Ultraviolet Photodetectors." In Wide Band Gap Semiconductor Nanowires 2, 179–202. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118984291.ch8.

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5

Foisal, Abu Riduan Md, Toan Dinh, Philip Tanner, Hoang-Phuong Phan, Tuan-Khoa Nguyen, Alan Iacopi, Erik W. Streed, and Dzung Viet Dao. "Ultraviolet and Visible Photodetection Using 3C-SiC/Si Hetero-Epitaxial Junction." In Sustainable Design and Manufacturing 2018, 208–16. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-04290-5_22.

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6

Liao, Mei Yong, and Yasuo Koide. "Visible-Blind Metal-Semiconductor-Metal Structured Deep-Ultraviolet Photodetectors Using Single-Crystalline Diamond Thin Film." In Materials Science Forum, 1759–62. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-432-4.1759.

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7

Miller, Ruth A., Hongyun So, Thomas A. Heuser, Ananth Saran Yalamarthy, Peter F. Satterthwaite, and Debbie G. Senesky. "Ultraviolet detectors for harsh environments." In Photodetectors, 267–91. Elsevier, 2023. http://dx.doi.org/10.1016/b978-0-08-102795-0.00008-6.

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G., D., and D. S. "GaN Based Ultraviolet Photodetectors." In Photodiodes - World Activities in 2011. InTech, 2011. http://dx.doi.org/10.5772/19172.

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9

Temkin, H. "Ultraviolet Photodetectors based on GaN and AlGaN." In Advanced Semiconductor and Organic Nano-Techniques, 147–90. Elsevier, 2003. http://dx.doi.org/10.1016/b978-012507060-7/50017-9.

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Sharma, Pankaj, and Shaibal Mukherjee. "Recent Advances in ZnO Based Ultraviolet Photodetectors." In Reference Module in Materials Science and Materials Engineering. Elsevier, 2018. http://dx.doi.org/10.1016/b978-0-12-803581-8.10385-6.

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Тези доповідей конференцій з теми "Ultraviolet Photodetector"

1

DE SIO, A., F. MONTI, F. MALVEZZI, E. BURATTINI, A. MARCELLI, and E. PACE. "ULTRAVIOLET DIAMOND PHOTODETECTOR." In Proceedings of the 9th Conference. WORLD SCIENTIFIC, 2006. http://dx.doi.org/10.1142/9789812773678_0028.

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2

Liu, Xin, Danhao Wang, Huabin Yu, Muhammad Hunain Memon, and Haiding Sun. "Polarity-Switchable Ultraviolet Photodetector Towards Spectrum-Distinguishable Photodetection." In CLEO: Applications and Technology. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/cleo_at.2021.jw1a.42.

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3

Qin, Yue, Dingbang Ma, Ying Wang, Changrui Liao, and Yiping Wang. "A probe-type fiber optic ultraviolet photodetector." In European Workshop on Optical Fibre Sensors (EWOFS 2023), edited by Marc Wuilpart and Christophe Caucheteur. SPIE, 2023. http://dx.doi.org/10.1117/12.2681883.

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4

Muller, A., G. Konstantinidis, M. Dragoman, D. Neculoiu, A. Dinescu, M. Androulidaki, M. Kayambaki, et al. "Ultraviolet MSM photodetector based on GaN micromachining." In 2008 International Semiconductor Conference. IEEE, 2008. http://dx.doi.org/10.1109/smicnd.2008.4703336.

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5

Cong, Mingyu, Yuhan Duan, Dayong Jiang, Zexuan Guo, Xuan Zhou, Nan Hu, and Kun Yu. "ZnO ultraviolet photodetector based metal-semiconductor-metal structure." In Young Scientists Forum 2017, edited by Songlin Zhuang, Junhao Chu, and Jian-Wei Pan. SPIE, 2018. http://dx.doi.org/10.1117/12.2317793.

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Anas, M., A. Basir, A. Manut, M. Hafiz Mamat, Rosmalini Abdul Kadir, A. Sabirin Zoolfakar, Rozina Abdul Rani, and M. Rusop. "Platinum (Pt) doped Nb2O5 for Enhancing Ultraviolet Photodetector." In 2018 IEEE International Conference on Semiconductor Electronics (ICSE). IEEE, 2018. http://dx.doi.org/10.1109/smelec.2018.8481304.

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Ghazai, A. J., S. M. Thahab, H. Abu Hassan, Z. Hassan, and A. SH Hussein. "AlInGaN based ultraviolet photodetector with Au contact electrodes." In 2ND ASEAN - APCTP WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY: (AMSN 2010). AIP, 2012. http://dx.doi.org/10.1063/1.4732488.

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Wu, Jingda, and Lih Lin. "Flexible ZnO Nanocrystal Ultraviolet Photodetector on Bio-membrane." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/cleo_si.2014.sth4i.8.

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Huang, Bo, Guan-nan He, Yue-bo Wu, Liang-tang Zhang, Jing Li, Dong-hui Guo, and Sun-tao Wu. "Fabrication of ZnO thin film Schottky ultraviolet photodetector." In 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, edited by Li Yang, Yaolong Chen, Ernst-Bernhard Kley, and Rongbin Li. SPIE, 2007. http://dx.doi.org/10.1117/12.783033.

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Gao, Yifan, Mengru Zhu, Xinyue Chen, Zikang Han, Chifeng Song, Keyang Zhang, and Zhiwei Zhao. "Performance Study of Flexible Solar-blind Ultraviolet Photodetector." In 2022 5th International Conference on Electronics and Electrical Engineering Technology (EEET). IEEE, 2022. http://dx.doi.org/10.1109/eeet58130.2022.00045.

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Звіти організацій з теми "Ultraviolet Photodetector"

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Sandvik, Peter, Stanislav Soloviev, Alexey Vert, Alexander Bolotnikov, James McMahon, and Joe Campbell. SiC Deep Ultraviolet Avalanche Photodetectors. Fort Belvoir, VA: Defense Technical Information Center, October 2010. http://dx.doi.org/10.21236/ada545370.

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