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Готові списки джерел за темами / Ultrathin oxides

Добірка наукової літератури з теми "Ultrathin oxides"

Автор: Grafiati

Опубліковано: 8 червня 2024

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Статті в журналах з теми "Ultrathin oxides":

1

Bec, Romulad B., Andrzej Jakubowsk, Lidia Łukasiak, and Michał Korwin-Pawłowski. "Challenges in ultrathin oxide layers formation." Journal of Telecommunications and Information Technology, no. 1 (March 30, 2001): 27–34. http://dx.doi.org/10.26636/jtit.2001.1.46.

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In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the Roadmap 2000. Formation, however, of such layers creates a lot of technical and technological problems. The aim of this paper is to present the technological methods that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are brie y described and their pros and cons are discussed.

2

Taylor, Seth T., John Mardinly, and Michael A. O'Keefe. "HRTEM Image Simulations for the Study of Ultrathin Gate Oxides." Microscopy and Microanalysis 8, no. 5 (October 2002): 412–21. http://dx.doi.org/10.1017/s1431927602020123.

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We have performed high resolution transmission electron microscope (HRTEM) image simulations to qualitatively assess the visibility of various structural defects in ultrathin gate oxides of MOSFET devices, and to quantitatively examine the accuracy of HRTEM in performing gate oxide metrology. Structural models contained crystalline defects embedded in an amorphous 16-Å-thick gate oxide. Simulated images were calculated for structures viewed in cross section. Defect visibility was assessed as a function of specimen thickness and defect morphology, composition, size, and orientation. Defect morphologies included asperities lying on the substrate surface, as well as “bridging” defects connecting the substrate to the gate electrode. Measurements of gate oxide thickness extracted from simulated images were compared to actual dimensions in the model structure to assess TEM accuracy for metrology. The effects of specimen tilt, specimen thickness, objective lens defocus, and coefficient of spherical aberration (Cs) on measurement accuracy were explored for nominal 10-Å gate oxide thickness. Results from this work suggest that accurate metrology of ultrathin gate oxides (i.e., limited to several percent error) is feasible on a consistent basis only by using a Cs-corrected microscope. However, fundamental limitations remain for characterizing defects in gate oxides using HRTEM, even with the new generation of Cs-corrected microscopes.

3

Morgen, P., A. Bahari, U. Robenhagen, J. F. Andersen, J. K. Hansen, K. Pedersen, M. G. Rao, and Z. S. Li. "Roads to ultrathin silicon oxides." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23, no. 1 (January 2005): 201–7. http://dx.doi.org/10.1116/1.1842113.

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4

Huang, Feng, W. J. Liu, J. F. Sullivan, J. A. Barnard, and M. L. Weaver. "Room-temperature oxidation of ultrathin TiB2 films." Journal of Materials Research 17, no. 4 (April 2002): 805–13. http://dx.doi.org/10.1557/jmr.2002.0118.

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Titanium diboride has been claimed as a very promising candidate material for protective applications in the magnetic recording. Its oxidation resistance at room temperature is a critical criterion in assessing this application potential. In this paper, the oxidation characteristics of ultrathin TiB2 thin films, such as overcoat erosion and oxide thickness, are investigated via a combination of x-ray reflectivity, x-ray photoelectron spectroscopy (XPS), and atomic force microscopy. It was found that a <2-h exposure to air at room temperature led to the formation of approximately 15-Å-thick, well-defined oxides at the expense of an approximately 9-Å erosion of the TiB2 overcoats, coupled with the existence of a sharp oxide/TiB2 interface. XPS studies confirmed the existence of the oxides. Considering the decreasing allowable thickness for such protective overcoats, oxidation and the resultant thickness gain negate such a potential of ultrathin TiB2 films. The results in our current report provide a new perspective on its potential as protective overcoats in magnetic recording.

5

Zhu, Jianhui, Jian Jiang, Wei Ai, Zhanxi Fan, Xintang Huang, Hua Zhang, and Ting Yu. "Encapsulation of nanoscale metal oxides into an ultra-thin Ni matrix for superior Li-ion batteries: a versatile strategy." Nanoscale 6, no. 21 (2014): 12990–3000. http://dx.doi.org/10.1039/c4nr03661a.

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A versatile strategy of encapsulating nanoscale metal oxides into ultrathin Ni “armors” is proposed for superior anodes of LIBs. The hybrids of metal oxide@Ni show drastic improvements in the capacity retention, long-term cyclic stability and rate performance.

6

Wang, Kai, Bolong Huang, Weiyu Zhang, Fan Lv, Yi Xing, Wenshu Zhang, Jinhui Zhou, et al. "Ultrathin RuRh@(RuRh)O2 core@shell nanosheets as stable oxygen evolution electrocatalysts." Journal of Materials Chemistry A 8, no. 31 (2020): 15746–51. http://dx.doi.org/10.1039/d0ta03213a.

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We report a novel architecture of ultrathin RuRh@(RuRh)O₂ core/shell nanosheets with a core of ultrathin metallic RuRh nanosheets and a shell of (RuRh)O₂ oxides as a superb electrocatalyst toward the oxgen evolution reaction (OER), better than most of the state-of-the-art Ru-based or Ir-based electrocatalysts. Moreover, the RuRh@(RuRh)O₂ core/shell nanosheets exhibit good durability because the (RuRh)O₂ oxide shell protects the normally labile RuRh NS core against dissolution during the OER process.

7

Ting, D. Z. Y. "Tunneling characteristics of nonuniform ultrathin oxides." Applied Physics Letters 73, no. 19 (November 9, 1998): 2769–71. http://dx.doi.org/10.1063/1.122585.

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8

Lobinsky, A. A., and V. I. Popkov. "Ultrathin 2D nanosheets of transition metal (hydro)oxides as prospective materials for energy storage devices: A short review." Electrochemical Materials and Technologies 1, no. 1 (2022): 20221008. http://dx.doi.org/10.15826/elmattech.2022.1.008.

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The ultrathin two-dimensional (2D) transition metal oxides and hydroxides (TMO and TMH) nanosheets are attractive for creating high-performance energy storage devices due to a set of unique physical and chemical properties. Flat 2D structure of such materials provides a sufficient number of active adsorption centers, and the ultra-small thickness, on the order of several nanometers, provides fast charge transfer, which significantly improves electronic conductivity. This brief review summarizes recent progress in the synthesis of materials based on ultrathin 2D nanosheets for energy storage applications, including pseudocapacitors, lithium-ion batteries, and other rechargeable devices. The review also presents examples of representative work on the synthesis of ultrathin 2D nanomaterials based on TMO and TMH for various power sources. In conclusion, the article discusses possible prospects and directions for further development of methods and routes for the synthesis of ultrathin two-dimensional transition metal oxides and hydroxides.

9

Rotondaro, A. L. Pacheco, R. T. Laaksonen, and S. P. Singh. "Impact of the Nitrogen Concentration of Sub-1.3 nm Gate Oxides on 65 nm Technology Transistor Parameters." Journal of Integrated Circuits and Systems 2, no. 2 (November 17, 2007): 63–66. http://dx.doi.org/10.29292/jics.v2i2.265.

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The nitrogen concentration of ultrathin gate oxides (sub-1.3 nm) was varied in a wide range (from 13 % to 23 %). The threshold voltage and the channel carrier mobility of advanced 65 nm technology CMOSFET transistors fabricated with these oxides were analyzed. It was observed that increasing the nitrogen concentration in the gate oxide results in a negative shift of the threshold voltage for both NMOS and PMOS devices and a degradation of the hole mobility. It was also observed that pchannel transistors are more sensitive to the nitrogen concentration of the gate oxide than n-channel transistors.

10

Chari, K. S., and S. Kar. "Interface Characteristics of Metal‐Oxide‐Semiconductor Capacitors with Ultrathin Oxides." Journal of The Electrochemical Society 138, no. 7 (July 1, 1991): 2046–49. http://dx.doi.org/10.1149/1.2085921.

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Дисертації з теми "Ultrathin oxides":

1

Tolvaišienė, Sonata. "Transport of charge carriers in ultrathin films of manganese oxides." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2009. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2009~D_20090218_143224-76401.

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The objective of this dissertation is to investigate lanthanum manganites, which exhibit colossal negative magnetoresistance and phase transitions from the paramagnetic state to the ferromagnetic state. The magnetoresistance and its ani-zotriopy of thin epitaxial manganite films at low (up to  0.5 T) magnetic fields, as well as effects induced by strong pulsed magnetic and electric fields were in-vestigated. It was demonstrated how it can be used in the development of magne-tic field sensors, short electric pulse forming devices and amplitude modulators. It was found that in the case of ultra-thin La-Sr-MnO3 films, the sign and value of the magnetoresistance anisotropy at low magnetic fields depends on the thickness of the films. An explanation of these results was proposed using the mean field approach and taking into consideration that the structure of the films changes with its thickness. A reversible thermoelectrical switching effect was discovered and investigated. A new method for nanosecond duration electrical pulses amplitude modulation by an external magnetic field using La0.87Sr0.17MnO3 films was suggested and experimentally verified. This dissertation consists of the abstracts in Lithuanian and English, intro-duction, six chapters, the main results and conclusions and list of literature. The introduction contains topicality and problem, the aim of the work, tasks, scientific novelty, practical value, approval of the results, statement to be de-fended and... [to full text]
Disertacijoje nagrinėjami lantano manganitai, pasižymintys faziniu virsmu iš paramagnetinės į feromagnetinę būseną bei milžiniškos neigiamos magnetovar-žos efektu. Tiriami magnetovaržos ir jos anizotropijos efektai silpnuose (iki  0,5 T) magnetiniuose laukuose bei stiprių impulsinių srovių ir magnetinių laukų sukelti efektai plonuose epitaksiniuose manganitų sluoksniuose. Pateikiami pasiūlymai tyrimo rezultatus panaudoti kuriant magnetinio lauko jutiklius, spar-čiųjų elektrinių impulsų formuotuvus bei amplitudės moduliatorius. Tiriant sil-pnų magnetinių laukų poveikį ultraplonųjų La-Sr-MnO3 sluoksnių elektriniam laidumui, buvo nustatyta, kad magnetovaržos anizotropijos ženklas ir vertė šiuo-se laukuose priklauso nuo sluoksnio storio. Pateiktas modelis, paaiškinantis eks-perimentinius rezultatus, paremtas vidutinio lauko artiniu ir įskaitantis sluoksnio struktūros kitimą kintant jo storiui. Aptiktas ir ištirtas grįžtamasis termoelektrinis nestabilumas, išaiškintos šio reiškinio atsiradimo priežastys. Pasiūlytas ir ekspe-rimentiškai realizuotas naujas ns trukmės elektrinių impulsų amplitudės modulia-vimo išoriniu magnetiniu lauku būdas, naudojant epitaksinius La0,87Sr0,17MnO3 sluoksnius. Disertaciją sudaro reziumė lietuvių ir anglų kalbomis, įvadas, šeši skyriai, pagrindiniai rezultatai ir išvados, literatūros sąrašas, publikacijų disertacijos tema sąrašas. Įvadiniame skyriuje nagrinėjamas problemos aktualumas, formuluojamas darbo tikslas bei uždaviniai, aprašomas mokslinis... [toliau žr. visą tekstą]

2

Dragosavac, Marko. "Electron transport in ultrathin oxide silicon MOSFETs." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614808.

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3

Matharu, J. "Surface science of ultrathin metal oxide films." Thesis, University College London (University of London), 2011. http://discovery.ucl.ac.uk/1335900/.

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The properties of metal oxide surfaces are key to their diverse technological applications. However, the semiconducting nature of metal oxides presents a problem - many surface science techniques are electron based and thus require samples to be conducting. As such, bulk crystal studies of metal oxides by techniques such as photoemission spectroscopy (PES) and scanning tunneling microscopy (STM) are limited to reduced surfaces. Alternatively, thin films of a metal oxide can be synthesised on a suitable conducting substrate that mimic the bulk crystal surface whilst having sufficient conducting character to use these techniques. CeO2 is an important material found in three-way catalysts that remove pollutants from the exhaust gas of modern automobiles. Key to this application is the ability of reduced ceria to store and release oxygen depending on the composition of the exhaust. The addition of noble metals such as Pd to the ceria surface greatly improves the efficiency of pollutant conversion evidenced by X-ray photoelectron spectroscopy (XPS) by reducing the ceria. Resonance photoemission spectroscopy (RESPES) has been used to investigate the eect of Pd on ceria CeO2-x(110) thin films grown on a Pt(111) substrate. RESPES is more surface specific than XPS and thus reveals more information on the surface layers of ceria films. TiO2(110) is the most studied metal oxide surface, and has a multitude of applications. Its chemistry with two of the most abundant chemical species - water (H2O) and oxygen (O2) - is thus very important. H2O has been shown to dissociate on TiO2 surfaces. TiO2 thin films grown on W(100) were used as model system to study the chemistry of the reaction between TiO2 and H2O, and subsequently the reaction of hydrated surfaces with O2 using XPS. STM was used to examine the morphology of TiO2(110) films grown on W(100)-(2 x 1)-O, changes with film thickness and methods of improving surface smoothness. The first detailed STM images showing row structure of TiO2(110) films grown on W are shown.

4

Wlodarczyk, Radoslaw Stanislaw. "Surface structure predictions and development of global exploration tools." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät, 2015. http://dx.doi.org/10.18452/17207.

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Diese Arbeit ist ein Beitrag zur theoretischen Chemie sowie zur Oberflächenchemie. Durch Kombination von computergestützten und experimentellen Untersuchungen wird die atomare Struktur von dünnen SiO2-Filmen auf Ru(0001)-Unterlagen, von eisendotierten SiO2-Filmen auf diesen Unterlagen und von H2O-Filmen auf MgO(001)-Oberflächen bestimmt. Die atomaren Strukturmodelle wurden entweder mit dem neu entworfenen und im Paket DoDo implementierten genetischen Algorithmus oder mittels auf Sachkenntnis gestützter Vermutungen erhalten. Die simulierten Eigenschaften der so erhaltenen Strukturen stimmen sehr gut mit den experimentellen Daten (Raster-Tunnel-Mikroskopie, Infrarot-Spektroskopie) überein. Die erfolgreiche Strukturbestimmung mithilfe des DoDo-Programms zeigt, dass genetische Algorithmen zur systematischen und extensiven Erkundung der Energielandschaften 2D-periodischer Systeme geeignet sind.
This work is a contribution in the field of theoretical chemistry and surface science. The joint computational and experimental studies investigated the atomic structure of ultrathin silica and iron-doped silica films formed on the Ru(0001) surface and water films formed on the MgO(001) surface. The atomic structure models were obtained using either the educated guess approach or the genetic algorithm that was designed and implemented within the DoDo package. The properties simulated for the resulting models are in a very good agreement with the experimental data (scanning tunnelling microscopy, infrared spectroscopy). The successful structure determination using the DoDo program shows that the genetic algorithm technique is capable of systematic and extensive exploration of the energy landscapes for 2D-periodic systems.

5

Grinter, D. C. "Surface studies of metal oxide catalysts and ultrathin films." Thesis, University College London (University of London), 2011. http://discovery.ucl.ac.uk/1334452/.

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This thesis examines two important metal oxide systems: ultrathin CeO2(111) films on Pt(111), and carboxylic acids on TiO2 surfaces, both of which are significant for future energy research. The structure and growth of ultrathin films of CeO2(111) supported on Pt(111) have been studied with Scanning Tunnelling Microscopy (STM), Low Energy Electron Diffraction (LEED) and Auger Electron Spectroscopy (AES). The ultrathin films were grown in a number of ways and their growth mechanism, electronic structure, and domain boundaries were investigated using STM and STS. Atomically resolved STM images (filled and empty states) have been obtained on these ultrathin films permitting the identification of many defect structures. The behaviour of individual gold atoms at room temperature on ultrathin CeO2(111) films on Pt(111) has been investigated with STM. Simultaneous atomically resolved images of a gold adatom and the filled states of the ceria permitted the identification of two adsorption sites: (i) atop an oxygen atom and (ii) in a three-fold hollow site. The adsorption and reactivity of acetic acid on anatase TiO2(101) has also been investigated. It was found that at low coverage, acetic acid is observed to have a characteristic appearance consistent with a dissociative bidentate binding geometry to two neighbouring Ti5c sites. Deposition at elevated temperatures at saturation coverage yielded a (2 x 1) superstructure. The effects of heating, UV exposure, and tip pulsing were also investigated. STM has been used to investigate the adsorption and photo-reactivity of benzoic acid on rutile TiO2(110)(1 x 1) and (1 x 2). Benzoic acid binds to both surfaces dissociatively via a bridging geometry leading to a (2 x 1) overlayer on the (1 x 1) surface at saturation. Benzoate adsorbs between the added-rows of the (1 x 2) reconstruction leading to a (2 x 2) superstructure at higher coverage and demonstrated the important role of intermolecular interactions such as hydrogen bonding.

6

Bayat, Alireza [Verfasser]. "Composition and geometric structure of ultrathin oxide films / Alireza Bayat." Halle, 2018. http://d-nb.info/1175950572/34.

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7

Garza, Michelle. "Reactivity of Oxide Surfaces and Metal-Oxide Interfaces: Effects of Water Vapor Pressure on Ultrathin Aluminum Oxide Films, and Studies of Platinum Growth Modes on Ultrathin Oxide Films and Their Effects on Adhesion." Thesis, University of North Texas, 2004. https://digital.library.unt.edu/ark:/67531/metadc4517/.

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The reactivity of oxide surfaces and metal-oxide interfaces play an important role in many technological applications such as corrosion, heterogeneous catalysis, and microelectronics. The focus of this research was (1) understanding the effects of water vapor exposure of ultrathin aluminum oxide films under non-ultrahigh vacuum conditions (>10-9 Torr) and (2) characterization of Pt growth modes on ultrathin Ta silicate and silicon dioxide films and the effects of growth modes on adhesion of a Cu overlayer. These studies were conducted with X-ray photoelectron spectroscopy (XPS). Ni3Al(110) was oxidized (10-6 Torr O2, 800K) followed by annealing (1100K). The data indicate that the annealed oxide film is composed of NiO, Al2O3 and an intermediate phase denoted here as "AlOx". Upon exposure of the oxide film at ambient temperature to increasing water vapor pressure (10-6 - 5 Torr), a shift in both the O(1s) and Al(2p)oxide peak maxima to lower binding energies is observed. In contrast, exposure of Al2O3/Al(polycrystalline) to water vapor under the same conditions results in a high binding energy shoulder in the O(1s) spectra which indicates hydroxylation. Spectral decomposition provides further insight into the difference in reactivity between the two oxide films. The corresponding trends of the O(1s)/Ni0(2p3/2) and Al(2p)/Ni0(2p3/2) spectral intensity ratios suggest conformal changes of the oxide film on Ni3Al(110). The growth behavior of sputter deposited Pt at ~300K on Ta silicate and SiO2 ultrathin films formed on Si(100) was investigated. The XPS data show that Pt deposition results in uniform growth or "wetting" on Ta silicate and 2-D cluster growth on SiO2. Electroless Cu deposition on ~11 monolayers (ML) Pt/Ta silicate film results in an adherent Cu film which passed the Scotch tape test. In contrast, electroless Cu deposition on ~11ML Pt/SiO2 results in a non-adherent Cu film due to weak Pt/SiO2 interaction.

8

Varga, P., M. Schmid, S. Muto, K. Tatsumi, T. Matsui, D. Tajima, and J. Yuhara. "Growth and structure of an ultrathin tin oxide film on Rh (111)." AIP Publishing, 2011. http://hdl.handle.net/2237/20826.

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9

Mihaychuk, James Gordon. "Nonlinear optical studies of multiphoton photoemission in silicon covered by ultrathin oxide films." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape15/PQDD_0013/NQ35250.pdf.

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10

Martynova, Yulia [Verfasser], and Reinhard [Akademischer Betreuer] Schomäcker. "CO oxidation on metal supported ultrathin oxide films / Yulia Martynova. Betreuer: Reinhard Schomäcker." Berlin : Universitätsbibliothek der Technischen Universität Berlin, 2013. http://d-nb.info/1035767384/34.

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Книги з теми "Ultrathin oxides":

1

1939-, King D. A., and Woodruff D. P, eds. Growth and properties of ultrathin epitaxial layers. Amsterdam: Elsevier, 1997.

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2

Pacchioni, Gianfranco, and Sergio Valeri, eds. Oxide Ultrathin Films. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527640171.

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3

Frei, Heinz, and Daniel Esposito, eds. Ultrathin Oxide Layers for Solar and Electrocatalytic Systems. Cambridge: Royal Society of Chemistry, 2022. http://dx.doi.org/10.1039/9781839163708.

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4

Pacchioni, Gianfranco, and Sergio Valeri. Oxide Ultrathin Films: Science and Technology. Wiley & Sons, Incorporated, John, 2012.

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5

Pacchioni, Gianfranco, and Sergio Valeri. Oxide Ultrathin Films: Science and Technology. Wiley & Sons, Limited, John, 2012.

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6

Pacchioni, Gianfranco, and Sergio Valeri. Oxide Ultrathin Films: Science and Technology. Wiley & Sons, Incorporated, John, 2012.

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7

Pacchioni, Gianfranco, and Sergio Valeri. Oxide Ultrathin Films: Science and Technology. Wiley & Sons, Incorporated, John, 2012.

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8

Pacchioni, Gianfranco, and Sergio Valeri. Oxide Ultrathin Films: Science and Technology. Wiley-VCH Verlag GmbH, 2011.

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9

(Editor), D. A. King, and D. P. Woodruff (Editor), eds. Oxide Surfaces - The Chemical Physics of Solid Surfaces : Growth and Properties of Ultrathin Epitaxial Layers. Elsevier Science Pub Co, 1997.

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10

Frei, Heinz, and Daniel Esposito. Ultrathin Oxide Layers for Solar and Electrocatalytic Systems. Royal Society of Chemistry, The, 2022.

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Частини книг з теми "Ultrathin oxides":

1

Giordano, Livia, and Gianfranco Pacchioni. "Unusual Properties of Oxides and Other Insulators in the Ultrathin Limit." In Oxide Ultrathin Films, 75–100. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527640171.ch4.

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2

Luches, Paola, and Sergio D’Addato. "Reducible Oxides as Ultrathin Epitaxial Films." In Oxide Materials at the Two-Dimensional Limit, 119–48. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-28332-6_4.

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3

Palmstrom, A. F., and M. O. Reese. "Chapter 3. Ultrathin Oxides for Solar Cells." In Energy and Environment Series, 27–69. Cambridge: Royal Society of Chemistry, 2022. http://dx.doi.org/10.1039/9781839163708-00027.

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4

Li, Qi, and H. S. Wang. "Strain and Magnetoresistance Anisotropy of PR0.7SR0.3MNO3 Ultrathin Films." In Nano-Crystalline and Thin Film Magnetic Oxides, 133–44. Dordrecht: Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-011-4493-3_9.

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5

Akbari, Mohammad Karbalaei, and Serge Zhuiykov. "Self-Limiting Two-Dimensional Surface Oxides of Liquid Metals." In Ultrathin Two-Dimensional Semiconductors for Novel Electronic Applications, 79–110. First edition. | Boca Raton, FL: CRC Press, 2020.: CRC Press, 2020. http://dx.doi.org/10.1201/9780429316784-3.

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6

Terashima, T., K. Shimura, Y. Bando, Y. Matsuda, A. Fujiyama, and S. Komiyama. "Ultrathin Films and Superlattices of High Temperature Superconducting Oxides." In Springer Proceedings in Physics, 25–31. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-77154-5_3.

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7

Hattori, Takeo. "Surface, Interface and Valence Band of Ultra-Thin Silicon Oxides." In Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, 241–56. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5008-8_17.

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8

Hirose, M., W. Mizubayashi, K. Morino, M. Fukuda, and S. Miyazaki. "Tunneling Transport and Reliability Evaluation in Extremely Thin Gate Oxides." In Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, 315–24. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5008-8_22.

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9

Meda, L., and G. F. Cerofolini. "Local Tunnel Emission Assisted by Inclusions Contained in Buried Oxides." In Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, 493–502. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5008-8_37.

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10

Lu, Z. H. "Synchrotron and Conventional Photoemission Studies of Oxides and N20 Oxynitrides." In Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, 49–63. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5008-8_4.

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Тези доповідей конференцій з теми "Ultrathin oxides":

1

Hirose, M., W. Mizubayashi, M. Fukuda, and S. Miyazaki. "Characterization of ultrathin gate oxides for advanced MOSFETs." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY. ASCE, 1998. http://dx.doi.org/10.1063/1.56852.

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2

Mizubayashi, Wataru, Hiroshi Itokawa, Seiichi Miyazaki, and Masataka Hirose. "Modeling of Soft Breakdown in Ultrathin Gate Oxides." In 1999 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1999. http://dx.doi.org/10.7567/ssdm.1999.a-10-2.

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3

Mizubayashi, W., Y. Yoshida, M. Narasaki, S. Miyazaki, and M. Hirose. "Temperature-Dependent Soft Breakdown in Ultrathin Gate Oxides." In 2000 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2000. http://dx.doi.org/10.7567/ssdm.2000.b-6-3.

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4

Lin, H. C., M. F. Wang, C. C. Chen, S. K. Hsien, C. H. Chien, T. Y. Huang, C. Y. Chang, and T. S. Chao. "Characterization of plasma charging damage in ultrathin gate oxides." In 1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual. IEEE, 1998. http://dx.doi.org/10.1109/relphy.1998.670662.

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5

Joshi, Atul B., G. Q. Lo, J. Ahn, Windsor Ting, and Dim-Lee Kwong. "Chemically modified ultrathin oxides fabricated by rapid thermal processing." In Rapid thermal and Integrated Processing, edited by Mehrdad M. Moslehi, Rajendra Singh, and Dim-Lee Kwong. SPIE, 1992. http://dx.doi.org/10.1117/12.56674.

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6

Moon, Dae Won, Hyun Kyong Kim, Hwack Joo Lee, Yong Jai Cho, and Hyun Mo Cho. "Thickness evaluation of ultrathin gate oxides at the limit." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY. ASCE, 1998. http://dx.doi.org/10.1063/1.56794.

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7

Hattangady, Sunil, D. T. Grider, Robert Kraft, Wei-Tsun Shiau, Monte A. Douglas, P. Nicollian, Mark Rodder, et al. "Remote plasma nitrided oxides for ultrathin gate dielectric applications." In Microelectronic Manufacturing, edited by David Burnett, Dirk Wristers, and Toshiaki Tsuchiya. SPIE, 1998. http://dx.doi.org/10.1117/12.323956.

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8

Field, Alan H. "Process monitoring of ultrathin oxides using surface charge analysis." In Microelectronic Manufacturing, edited by Damon K. DeBusk and Sergio A. Ajuria. SPIE, 1997. http://dx.doi.org/10.1117/12.284682.

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9

Sytchkova, A., D. Zola, M. L. Grilli, A. Piegari, M. Fang, H. He, and J. Shao. "Interface plasmonic properties of silver coated by ultrathin metal oxides." In SPIE Optical Systems Design, edited by Michel Lequime, H. Angus Macleod, and Detlev Ristau. SPIE, 2011. http://dx.doi.org/10.1117/12.896769.

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10

Nishioka, Yasushiro, Kenji Namba, Mieko Matsumura, Tomoyuki Sakoda, Yoshinao Kumagai, Tadahiro Komeda, Hikaru Kobayashi, Tyuji Hoshino, Atsushi Ando, and Kazushi Miki. "Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides." In 1998 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1998. http://dx.doi.org/10.7567/ssdm.1998.b-4-2.

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Звіти організацій з теми "Ultrathin oxides":

1

Ludeke, R. Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures. Fort Belvoir, VA: Defense Technical Information Center, August 1997. http://dx.doi.org/10.21236/ada329531.

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