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Статті в журналах з теми "Two-dimensional molybdenum disulfide"

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Chen, Xin, Cian Bartlam, Vicent Lloret, Narine Moses Badlyan, Stefan Wolff, Roland Gillen, Tanja Stimpel‐Lindner, et al. "Covalent Bisfunctionalization of Two‐Dimensional Molybdenum Disulfide." Angewandte Chemie 133, no. 24 (May 7, 2021): 13596–604. http://dx.doi.org/10.1002/ange.202103353.

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Chen, Xin, Cian Bartlam, Vicent Lloret, Narine Moses Badlyan, Stefan Wolff, Roland Gillen, Tanja Stimpel‐Lindner, et al. "Covalent Bisfunctionalization of Two‐Dimensional Molybdenum Disulfide." Angewandte Chemie International Edition 60, no. 24 (May 7, 2021): 13484–92. http://dx.doi.org/10.1002/anie.202103353.

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Chen, Xin, Peter Denninger, Tanja Stimpel‐Lindner, Erdmann Spiecker, Georg S. Duesberg, Claudia Backes, Kathrin C. Knirsch, and Andreas Hirsch. "Defect Engineering of Two‐Dimensional Molybdenum Disulfide." Chemistry – A European Journal 26, no. 29 (April 21, 2020): 6535–44. http://dx.doi.org/10.1002/chem.202000286.

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Gu Pin-Chao, Zhang Kai-Liang, Feng Yu-Lin, Wang Fang, Miao Yin-Ping, Han Ye-Mei, and Zhang Han-Xia. "Recent progress of two-dimensional layered molybdenum disulfide." Acta Physica Sinica 65, no. 1 (2016): 018102. http://dx.doi.org/10.7498/aps.65.018102.

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Kim, Richard Hahnkee, Juyoung Leem, Christopher Muratore, SungWoo Nam, Rahul Rao, Ali Jawaid, Michael Durstock, et al. "Photonic crystallization of two-dimensional MoS2 for stretchable photodetectors." Nanoscale 11, no. 28 (2019): 13260–68. http://dx.doi.org/10.1039/c9nr02173f.

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Анотація:
Photonic crystallization of 2D molybdenum disulfide on PDMS is demonstrated as an effective direct fabrication tool to enable stretchable photodetectors that allow for up to 5.7% strain and over 1000 stretching cycles.
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Cho, Dae-Hyung, Woo-Jung Lee, Jae-Hyung Wi, Won Seok Han, Sun Jin Yun, Byungha Shin, and Yong-Duck Chung. "Enhanced sulfurization reaction of molybdenum using a thermal cracker for forming two-dimensional MoS2 layers." Physical Chemistry Chemical Physics 20, no. 23 (2018): 16193–201. http://dx.doi.org/10.1039/c8cp02390e.

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Анотація:
We propose a method to fabricate two-dimensional (2D) molybdenum disulfide (MoS2) layers to overcome issues in typical fabrication processes by promoting the sulfurization reaction of molybdenum (Mo).
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Yang, Yuanyuan, Ruguang Wang, Liujing Yang, Yan Jiao, and Tao Ling. "Two dimensional electrocatalyst engineering via heteroatom doping for electrocatalytic nitrogen reduction." Chemical Communications 56, no. 91 (2020): 14154–62. http://dx.doi.org/10.1039/d0cc05635a.

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Huang, Hao, Lu Liu, Chengpeng Jiang, Jiangdong Gong, Yao Ni, Zhipeng Xu, Huanhuan Wei, Haiyang Yu, and Wentao Xu. "Two-dimensional molybdenum disulfide artificial synapse with high sensitivity." Neuromorphic Computing and Engineering 2, no. 1 (January 24, 2022): 014004. http://dx.doi.org/10.1088/2634-4386/ac4338.

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Abstract This paper reports the fabrication of an artificial synapse (AS) based on two-dimensional molybdenum disulfide (MoS2) film. The AS emulates important synaptic functions such as paired-pulse facilitation, spike-rate dependent plasticity, spike-duration dependent plasticity and spike-number dependent plasticity. The spike voltage can mediate ion migration in the ion gel to regulate the conductance of MoS2 channel, thereby realizing the emulation of synaptic plasticity. More importantly, the AS stably exhibits high sensitivity in response to spike stimuli (100 mV) and low-energy consumption (∼33.5 fJ per spike). In addition, the device emulates some synaptic functions and realizes the synaptic expression of Morse code. The development of this device represents an important step toward constructing high-performance and multifunctional neuromorphic system.
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Li, Xue, Jinhua Li, Xiaohua Wang, Jiaxin Hu, Xuan Fang, Xueying Chu, Zhipeng Wei, Junjie Shan, and Xiaochen Ding. "Preparation, Applications of Two-Dimensional Graphene-like Molybdenum Disulfide." Integrated Ferroelectrics 158, no. 1 (November 22, 2014): 26–42. http://dx.doi.org/10.1080/10584587.2014.956611.

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Wang, Hongmei, Chunhe Li, Pengfei Fang, Zulei Zhang, and Jin Zhong Zhang. "Synthesis, properties, and optoelectronic applications of two-dimensional MoS2 and MoS2-based heterostructures." Chemical Society Reviews 47, no. 16 (2018): 6101–27. http://dx.doi.org/10.1039/c8cs00314a.

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Анотація:
As a two-dimensional (2D) material, molybdenum disulfide (MoS2) exhibits unique electronic and optical properties useful for a variety of optoelectronic applications including light harvesting.
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Дисертації з теми "Two-dimensional molybdenum disulfide"

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Ganger, Zachary Durnell. "Growth of Two-Dimensional Molybdenum Disulfide via Chemical Vapor Deposition." Wright State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=wright1557258478934291.

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Tsai, I.-Ling. "Magnetic properties of two-dimensional materials : graphene, its derivatives and molybdenum disulfide." Thesis, University of Manchester, 2014. https://www.research.manchester.ac.uk/portal/en/theses/magnetic-properties-of-twodimensional-materials-graphene-its-derivatives-and-molybdenum-disulfide(59dcba1b-332e-4a58-86f6-80ed56c7fdd1).html.

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Graphene, an atomically thin material consisting of a hexagonal, highly packed carbon lattice, is of great interests in its magnetic properties. These interests can be categorized in several fields: graphene-based magnetic materials and their applications, large diamagnetism of graphene, and the heterostructures of graphene and other two dimensional materials. In the first aspect, magnetic moments can be in theory introduced to graphene by minimizing its size or introducing structural defects, leading to a very light magnetic material. Furthermore, weak spin-orbital interaction, and long spin relaxation length make graphene promising for spintronics. The first part of this thesis addressed our experimental investigation in defect-induced magnetism of graphene. Non-interacted spins of graphene have been observed by intentionally introducing vacancies and adatoms through ion-irradiation and fluorination, respectively. The defect concentration or the magnetic moments introduced in this thesis cannot provide enough interaction for magnetic coupling. Furthermore, the spins induced by vacancies and adatoms can be controlled through shifting the Fermi energy of graphene using molecular doping, where the adatoms were alternatively introduced by annealing in the inert environment. The paramagnetic responses in graphene induced by vacancy-type defects can only be diverted to half of its maximum, while those induced by sp3 defects can be almost completely suppressed. This difference is supposed that vacancy-type defects induced two localized states (pie and sigma). Only the latter states, which is also the only states induced by sp3 defects, involves in the suppression of magnetic moments at the maximum doping achieved in this thesis. The observation through high resolution transmission electron microscope (HR-TEM) provides more information to the hypothesis of the previous magnetic findings. Reconstructed single vacancy is the majority of defects discovered in proton-irradiated graphene. This result verifies the defect-induced magnetic findings in our results, as well as the electronic properties of defected graphene in the literatures. On the other hand, the diamagnetic susceptibility of neutral graphene is suggested to be larger than that of graphite, and vanish rapidly as a delta-like function when graphene is doped. In our result, surprisingly, the diamagnetic susceptibility varies little when the Fermi level is less than 0.3 eV, in contrast with the theory. When the Fermi energy is higher than 0.3 eV, susceptibility then reduces significantly as the trend of graphite. The little variation in susceptibility near the Dirac point is probably attributed to the spatial confinement of graphene nanoflakes, which are the composition of graphene laminates. In the end of this thesis, we discuss the magnetic properties in one of the other two dimensional materials, molybdenum disulfide (MoS2). It is a potential material for graphene-based heterostructure applications. The magnetic moments in MoS2 are shown to be induced by either edges or vacancies, which are introduced by sonication or proton-irradiation, respectively, similar to the suggestions by theories. However, no significant ferromagnetic finding has been found in all of our cases.
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Reifler, Ellen Sarah. "Investigation of Intrinsic and Tunable Properties of Two-Dimensional Transition-Metal Dichalcogenides for Optical Applications." Research Showcase @ CMU, 2018. http://repository.cmu.edu/dissertations/1182.

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Анотація:
Since the scotch-tape isolation of graphene, two-dimensional (2D) materials have been studied with increasing enthusiasm. Two-dimensional transition-metal dichalcogenides are of particular interest as atomically thin semiconductors. These materials are naturally transparent in their few-layer form, have direct band gaps in their monolayer form, exhibit extraordinary absorption, and demonstrate unique physics, making them promising for efficient and novel optical devices. Due to the two-dimensional nature of the materials, their properties are highly susceptible to the environment above and below the 2D films. It is critical to understand the influences of this environment on the properties of 2D materials and on the performance parameters of devices made with the materials. For transparent optical devices requiring electrical contacts and gates, the effect of transparent conducting oxides on the optical properties of 2D semiconductors is of particular importance. The ability to tune the optical properties of 2D transition-metal dichalcogenides could allow for improved control of the emission or absorption wavelength of optical devices made with the materials. Continuously tuning the optical properties of these materials would be advantageous for variable wavelength devices such as photodetectors or light emitters. This thesis systematically investigates the intrinsic structural and optical properties of two-dimensional transition-metal dichalcogenide films, the effect of substrate-based optical interference on the optical emission properties of the materials, and demonstrates methods to controllably tune the luminescence emission of the materials for future optical applications. This thesis advances the study of these materials toward integration in future efficient and novel optical devices. The specific transition metal dichalcogenides investigated here are molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2), tungsten disulfide (WS2), and tungsten diselenide (WSe2). The thickness-dependence of the intrinsic in-plane crystal structure of these materials is elucidated with high-resolution transmission electron microscopy; thickness-dependent optical properties are studied using Raman and photoluminescence spectroscopies. This thesis investigates the optical interference effects from substrates with transparent conducting oxide layers on the optical properties of few-layer MoS2 films. An understanding of these effects is critical for integrating MoS2 into efficient optical devices. We predict contributions of optical interference effects to the luminescence emission of few-layer MoS2 films. The predictions are experimentally verified. We also demonstrate the use of optical interference effects to tune the wavelength and intensity of the luminescence emission of few-layer MoS2. This thesis explores the use of electric fields applied perpendicular to the films to continuously and reversibly tune the band gap of few-layer MoS2 for future variable wavelength devices. To facilitate integration into devices, we demonstrate electric fieldinduced band gap tuning by applying electric fields with a pair of transparent or semitransparent conducting layers, and without the need for direct electrical contact to the MoS2 films. The observed band gap tuning is attributed to the Stark Effect. We discuss challenges to maximizing the effect of electric field-induced band gap tuning. We demonstrate that optical interference effects do not prevent observation of band gap tuning via applied electric fields. We successfully combine two luminescence emission tuning methods: optical interference effects and electric field effects.
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Lee, Jaesung. "Optically Transduced Two-Dimensional (2D) Resonant Nanoelectromechanical Systems and Their Emerging Applications." Case Western Reserve University School of Graduate Studies / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=case1474972552266241.

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Kretschmer, Silvan [Verfasser], Jürgen [Gutachter] Faßbender, and Jani [Gutachter] Kotakoski. "Effects of Electron and Ion Irradiation on Two-Dimensional Molybdenum-Disulfide / Silvan Kretschmer ; Gutachter: Jürgen Faßbender, Jani Kotakoski." Dresden : Technische Universität Dresden, 2020. http://d-nb.info/122705307X/34.

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Yang, Rui. "Coupling Two-Dimensional (2D) Nanoelectromechanical Systems (NEMS) with Electronic and Optical Properties of Atomic Layer Molybdenum Disulfide (MoS2)." Case Western Reserve University School of Graduate Studies / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=case1459776436.

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Hagerty, Phillip. "Physical Vapor Deposition of Materials for Flexible Two Dimensional Electronic Devices." University of Dayton / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1460739765.

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Park, Juhong. "Fabrication of Large-Scale and Thickness-Modulated Two-Dimensional Transition Metal Dichalcogenides [2D TMDs] Nanolayers." Thesis, University of North Texas, 2019. https://digital.library.unt.edu/ark:/67531/metadc1505271/.

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Анотація:
This thesis describes the fabrication and characterization of two-dimensional transition dichalcogenides (2D TMDs) nanolayers for various applications in electronic and opto-electronic devices applications. In Chapter 1, crystal and optical structure of TMDs materials are introduced. Many TMDs materials reveal three structure polytypes (1T, 2H, and 3R). The important electronic properties are determined by the crystal structure of TMDs; thus, the information of crystal structure is explained. In addition, the detailed information of photon vibration and optical band gap structure from single-layer to bulk TMDs materials are introduced in this chapter. In Chapter 2, detailed information of physical properties and synthesis techniques for molybdenum disulfide (MoS2), tungsten disulfide (WS2), and molybdenum ditelluride (MoTe2) nanolayers are explained. The three representative crystal structures are trigonal prismatic (hexagonal, H), octahedral (tetragonal, T), and distorted structure (Tʹ). At room temperature, the stable structure of MoS2 and WS2 is semiconducting 2H phase, and MoTe2 can reveal both 2H (semiconducting phase) and 1Tʹ (semi-metallic phase) phases determined by the existence of strains. In addition, the pros and cons of the synthesis techniques for nanolayers are discussed. In Chapter 3, the topic of synthesized large-scale MoS2, WS2, and MoTe2 films is considered. For MoS2 and WS2 films, the layer thickness is modulated from single-layer to multi-layers. The few-layer MoTe2 film is synthesized with two different phases (2H or 1Tʹ). The all TMDs films are fabricated using two-step chemical vapor deposition (CVD) method. The analyses of atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL), and Raman spectroscopy confirm that the synthesis of high crystalline MoS2, WS2, and MoTe2 films are successful. The electronic properties of both MoS2 and WS2 exhibit a p-type conduction with relatively high field effect mobility and current on/off ratio. In Chapter 4, vertically-stacked few-layer MoS2/WS2 heterostructures on SiO2/Si and flexible polyethylene terephthalate (PET) substrates is presented. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) show the structural integrity of two distinct 2D TMD layers with atomically sharp van der Waals (vdW) heterointerfaces. Electrical transport measurements of the MoS2/WS2 heterostructure reveal diode-like behavior with current on/off ratio of ~ 104. In Chapter 5, optically uniform and scalable single-layer Mo1-xWxS2 alloys are synthesized by a two-step CVD method followed by a laser thinning. Post laser treatment is presented for etching of few-layer Mo1-xWxS2 alloys down to single-layer alloys. The optical band gap is controlled from 1.871 to 1.971 eV with the variation in the tungsten (W) content, x = 0 to 1. PL and Raman mapping analyses confirm that the laser-thinning of the Mo1-xWxS2 alloys is a self-limiting process caused via heat dissipation to SiO2/Si substrate, resulting in fabrication of spatially uniform single-layer Mo1-xWxS2 alloy films.
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Tang, Yanping, Dongqing Wu, Yiyong Mai, Hao Pan, Jing Cao, Chongqing Yang, Fan Zhang, and Xinliang Feng. "A two-dimensional hybrid with molybdenum disulfide nanocrystals strongly coupled on nitrogen-enriched graphene via mild temperature pyrolysis for high performance lithium storage." Royal Society of Chemistry, 2014. https://tud.qucosa.de/id/qucosa%3A36311.

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Анотація:
A novel 2D hybrid with MoS₂ nanocrystals strongly coupled on nitrogen-enriched graphene (MoS₂/NGg-C₃N₄) is realized by mild temperature pyrolysis (550 °C) of a self-assembled precursor (MoS₃/g-C₃N₄–H⁺/GO). With rich active sites, the boosted electronic conductivity and the coupled structure, MoS₂/NGg₋C₃N₄ achieves superior lithium storage performance.
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Wu, Min. "Adhesion and Surface Energy Profiles of Large-area Atomic Layers of Two-dimensional MoS2 on Rigid Substrates by Facile Methods." Thesis, University of North Texas, 2016. https://digital.library.unt.edu/ark:/67531/metadc849762/.

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Анотація:
Two-dimensional (2D) transition metal dichalcogenides (TMDs) show great potential for the future electronics, optoelectronics and energy applications. But, the studies unveiling their interactions with the host substrates are sparse and limits their practical use for real device applications. We report the facile nano-scratch method to determine the adhesion energy of the wafer scale MoS2 atomic layers attached to the SiO2/Si and sapphire substrates. The practical adhesion energy of monolayer MoS2 on the SiO2/Si substrate is 7.78 J/m2. The practical adhesion energy was found to be an increasing function of the MoS2 thickness. Unlike SiO2/Si substrates, MoS2 films grown on the sapphire possess higher bonding energy, which is attributed to the defect-free growth and less number of grain boundaries, as well as less stress and strain stored at the interface owing to the similarity of Thermal Expansion Coefficient (TEC) between MoS2 films and sapphire substrate. Furthermore, we calculated the surface free energy of 2D MoS2 by the facile contact angle measurements and Neumann model fitting. A surface free energy ~85.3 mJ/m2 in few layers thick MoS2 manifests the hydrophilic nature of 2D MoS2. The high surface energy of MoS2 helps explain the good bonding strength at MoS2/substrate interface. This simple adhesion energy and surface energy measurement methodology could further apply to other TMDs for their widespread use.
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Книги з теми "Two-dimensional molybdenum disulfide"

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Jin, Wencan. Electronic Structure and Surface Physics of Two-dimensional Material Molybdenum Disulfide. [New York, N.Y.?]: [publisher not identified], 2017.

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Liu, Cheng-Hua. Electrical and Optoelectronic Properties of the Nanodevices Composed of Two-Dimensional Materials: Graphene and Molybdenum Disulfide. Springer, 2018.

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Liu, Cheng-Hua. Electrical and Optoelectronic Properties of the Nanodevices Composed of Two-Dimensional Materials: Graphene and Molybdenum Disulfide. Springer, 2019.

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Частини книг з теми "Two-dimensional molybdenum disulfide"

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Köhler, Mateus H., João P. K. Abal, Gabriel V. Soares, and Marcia C. Barbosa. "Molybdenum Disulfide and Tungsten Disulfide as Novel Two-Dimensional Nanomaterials in Separation Science." In Two-Dimensional (2D) Nanomaterials in Separation Science, 193–217. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-72457-3_8.

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Asgari, Reza. "Introduction to electronic and optical properties of two-dimensional molybdenum disulfide systems." In No-nonsense Physicist, 13–43. Pisa: Scuola Normale Superiore, 2016. http://dx.doi.org/10.1007/978-88-7642-536-3_3.

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Тези доповідей конференцій з теми "Two-dimensional molybdenum disulfide"

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Goodfellow, Kenny, Ryan Beams, Lukas Novotny, and Nick Vamivakas. "Two-Dimensional Photonics with Molybdenum Disulfide." In Conference on Coherence and Quantum Optics. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/cqo.2013.m6.54.

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Ran, Baofa, Yufei Ma, Zhenfang Peng, Shoujun Ding, Haiyue Sun, and Qingli Zhang. "Two-dimensional Molybdenum Disulfide Passively Q-switched Nd:GdYNbO4 Laser." In Frontiers in Optics. Washington, D.C.: OSA, 2019. http://dx.doi.org/10.1364/fio.2019.jw3a.40.

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Lee, Jaesung, Zenghui Wang, and Philip X. L. Feng. "Frequency scaling of molybdenum disulfide (MoS2) two-dimensional (2D) nanomechanical resonators." In 2013 Joint European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC). IEEE, 2013. http://dx.doi.org/10.1109/eftf-ifc.2013.6702301.

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da Silva, Carlos, and Cristina H. Amon. "Predicting phonon thermal transport in strained two-dimensional materials: Graphene, boron nitride, and molybdenum disulfide." In 2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm). IEEE, 2017. http://dx.doi.org/10.1109/itherm.2017.7992494.

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Burns, Kory, and Assel Aitkaliyeva. "Mitigating the Substrate Effect on Two-Dimensional Molybdenum Disulfide: The Case of Lattice Contraction/Expansion." In Proposed for presentation at the Spring 2021 Materials Research Society Conference held April 17-23, 2021 in *Virtual, *Virtual, United States of America. US DOE, 2021. http://dx.doi.org/10.2172/1863496.

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Lin, Kabin, Zhishan Yuan, Yu Yu, Kun Li, Haojie Yang, Pinyao He, Jian Ma, Jingjie Sha, and Yunfei Chen. "A MoS2 Field-Effect Transistor With a Liquid Back Gate." In ASME 2016 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/imece2016-66544.

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Анотація:
The two-dimensional layer of Molybdenum disulfide (MoS2) has attracted much interest due to its direct-gap property and potential applications in the field of catalysis, nanotribology, microelectronics, lithium batteries, hydrogen storage, medical, high-performance flexible electronics and optoelectronics. In this paper, based on few-layer MoS2 acquired by mechanical exfoliation method, a MoS2 liquid-gated field effect transistor (L-FET) is fabricated. Simultaneously, the few-layer MoS2 is characterized by Raman spectral. Then, the performance of MoS2-based L-FET devices is investigated by a source meter instrument in the different back gate voltage of 0.1mol/L NaCl solution. The result reveals that the Schottky barriers is formed between platinum and few-layer MoS2 and the back gate voltage has a great control effect with the drain-to-source current of MoS2 field effect transistor.
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Yu, Min-Wen, Satoshi Ishii, Shisheng Li, Ji-Ren Ku, Jhen-Hong Yang, Kuan-Lin Su, Takaaki Taniguchi, Tadaaki Nagao, and Kuo-Ping Chen. "Observation of carrier transports at exciton-plasmon coupling in MoS2 monolayers and 1D plamsmonic nanogrooves." In JSAP-OSA Joint Symposia. Washington, D.C.: Optica Publishing Group, 2021. http://dx.doi.org/10.1364/jsap.2021.10a_n404_6.

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Анотація:
Two-dimensional transition metal dichalcogenides (TMDCs) have studied intensively owing to their unique optical and electronic properties [1]. Among TMDCs, monolayer molybdenum disulfide (MoS2) is a direct bandgap semiconductor with strong binding energies which make it as a perfect candidate for light-matter coupling system. In the current work, we fabricated hybrid systems of MoS2 monolayers [2] and 1D plasmonic nanogrooves made of gold (Au) to study exciton-plasmon coupling, particularly the carrier transport at the coupling state (see Fig. 1(a)). The nanogrooves were suited to excite in-plane plasmons, which are different from metallic-nanoparticle-on-mirror configuration.(/p)(p)The exciton-plasmon couplings were confirmed by the reflectance measurements and the dispersion relations were plotted from the reflectance measurements as shown in Fig. 1(b). In Fig. 1(b), the plasmon-exciton coupling of the upper polariton and lower polariton were plotted as a function of detuning. The splitting energy was as large as 65 meV, which is one of the largest among the values reported so far at room temperature. The exciton-plasmon coupling has also been confirmed by the Kelvin probe force microscope (KPFM) which recorded the surface potentials. As shown in Fig. 1(c), while there was no surface potential change for the MoS2 on planar Au film, a surface potential shift of 13.5 meV was observed for the MoS2 on nanogroove upon laser irradiation at 532 nm. This is a direct evidence that surface potential shift was induced at the exciton-plasmon coupling. Our results indicated that the 1D plasmonic nanogrooves are appropriate structures to study exciton-plasmon coupling with large splitting energy at room temperature.
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