Статті в журналах з теми "Two Dimensional Electron Systems (2DES)"
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Satou, Akira, and Koichi Narahara. "Numerical Characterization of Dyakonov-Shur Instability in Gated Two-Dimensional Electron Systems." International Journal of High Speed Electronics and Systems 25, no. 03n04 (September 2016): 1640024. http://dx.doi.org/10.1142/s0129156416400243.
Повний текст джерелаFreeman, M. L., Tzu-Ming Lu, and L. W. Engel. "Resistively loaded coplanar waveguide for microwave measurements of induced carriers." Review of Scientific Instruments 93, no. 4 (April 1, 2022): 043901. http://dx.doi.org/10.1063/5.0085112.
Повний текст джерелаD’Antuono, M., A. Kalaboukhov, R. Caruso, S. Wissberg, S. Weitz Sobelman, B. Kalisky, G. Ausanio, M. Salluzzo, and D. Stornaiuolo. "Nanopatterning of oxide 2-dimensional electron systems using low-temperature ion milling." Nanotechnology 33, no. 8 (November 30, 2021): 085301. http://dx.doi.org/10.1088/1361-6528/ac385e.
Повний текст джерелаVerseils, Marine, Alexandre Voute, Benjamin Langerome, Maxime Deutsch, Jean-Blaise Brubach, Alexei Kalaboukhov, Alessandro Nucara, Paolo Calvani, and Pascale Roy. "Grazing-angle reflectivity setup for the low-temperature infrared spectroscopy of two-dimensional systems." Journal of Synchrotron Radiation 26, no. 6 (September 11, 2019): 1945–50. http://dx.doi.org/10.1107/s1600577519010920.
Повний текст джерелаPHONG, TRAN CONG, VO THANH LAM, and LUONG VAN TUNG. "CALCULATION OF THE INTENSITY-DEPENDENT ABSORPTION SPECTRUM IN TWO-DIMENSIONAL ELECTRON SYSTEMS." Modern Physics Letters B 25, no. 11 (May 10, 2011): 863–72. http://dx.doi.org/10.1142/s0217984911026061.
Повний текст джерелаCHEBOTAREV, ANDREY, and GALINA CHEBOTAREVA. "CYCLOTRON RESONANCE VANISHING EFFECT AND THz DETECTION." International Journal of High Speed Electronics and Systems 18, no. 04 (December 2008): 959–69. http://dx.doi.org/10.1142/s0129156408005916.
Повний текст джерелаCangas, R., and M. A. Hidalgo. "Influence of the Spin–Orbit Interaction on the Magnetotransport Properties of a Two-Dimensional Electron System." SPIN 05, no. 03 (September 2015): 1530003. http://dx.doi.org/10.1142/s2010324715300030.
Повний текст джерелаMORGENSTERN, MARKUS. "PROBING THE LOCAL DENSITY OF STATES OF DILUTE ELECTRON SYSTEMS IN DIFFERENT DIMENSIONS." Surface Review and Letters 10, no. 06 (December 2003): 933–62. http://dx.doi.org/10.1142/s0218625x0300575x.
Повний текст джерелаBAENNINGER, MATTHIAS, ARINDAM GHOSH, MICHAEL PEPPER, HARVEY E. BEERE, IAN FARRER, and DAVID A. RITCHIE. "MAGNETIC FIELD INDUCED INSTABILITIES IN LOCALIZED TWO-DIMENSIONAL ELECTRON SYSTEMS." International Journal of Modern Physics B 23, no. 12n13 (May 20, 2009): 2708–12. http://dx.doi.org/10.1142/s0217979209062232.
Повний текст джерелаDOHI, M., R. YONAMINE, K. OTO, and K. MURO. "POTENTIAL IMAGING IN QUANTUM HALL DEVICES BY OPTICAL FIBER BASED POCKELS MEASUREMENT." International Journal of Modern Physics B 21, no. 08n09 (April 10, 2007): 1414–18. http://dx.doi.org/10.1142/s0217979207042926.
Повний текст джерелаHatke, A. T., H. Deng, Yang Liu, L. W. Engel, L. N. Pfeiffer, K. W. West, K. W. Baldwin, and M. Shayegan. "Wigner solid pinning modes tuned by fractional quantum Hall states of a nearby layer." Science Advances 5, no. 3 (March 2019): eaao2848. http://dx.doi.org/10.1126/sciadv.aao2848.
Повний текст джерелаDAHAN, PINCHAS, and ISRAEL VAGNER. "HIGH FIELD RESONANT TUNING OF THE NUCLEAR SPIN-QUBIT RELAXATION RATE IN 2DES WITH MAGNETIC IMPURITIES: STRONG SCATTERING LIMIT." International Journal of Modern Physics B 18, no. 27n29 (November 30, 2004): 3865–70. http://dx.doi.org/10.1142/s021797920402761x.
Повний текст джерелаMeng, You, Fangzhou Li, Changyong Lan, Xiuming Bu, Xiaolin Kang, Renjie Wei, SenPo Yip, et al. "Artificial visual systems enabled by quasi–two-dimensional electron gases in oxide superlattice nanowires." Science Advances 6, no. 46 (November 2020): eabc6389. http://dx.doi.org/10.1126/sciadv.abc6389.
Повний текст джерелаWEXLER, CARLOS, and ORION CIFTJA. "NOVEL LIQUID CRYSTALLINE PHASES IN QUANTUM HALL SYSTEMS." International Journal of Modern Physics B 20, no. 07 (March 20, 2006): 747–78. http://dx.doi.org/10.1142/s0217979206033632.
Повний текст джерелаDu, Shuo, Yang Guo, Xin Huang, Chi Sun, Zhaoqian Zhang, Leyong Hu, Ruixuan Zheng, et al. "Strain lithography for two-dimensional materials by electron irradiation." Applied Physics Letters 120, no. 9 (February 28, 2022): 093104. http://dx.doi.org/10.1063/5.0082556.
Повний текст джерелаXU, W. "FAR-INFRARED EMISSION BY HEATED ELECTRONS IN A TWO-DIMENSIONAL SEMICONDUCTOR SYSTEM." Modern Physics Letters B 10, no. 06 (March 10, 1996): 181–88. http://dx.doi.org/10.1142/s0217984996000225.
Повний текст джерелаJavaid Iqbal, Muhammad, Dirk Reuter, Andreas Dirk Wieck, and Caspar van der Wal. "Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure." European Physical Journal Applied Physics 89, no. 2 (February 2020): 20101. http://dx.doi.org/10.1051/epjap/2020190202.
Повний текст джерелаJin, Eric N., Lior Kornblum, Charles H. Ahn, and Frederick J. Walker. "Integrating 2D electron gas oxide heterostructures on silicon using rare-earth titanates." MRS Advances 1, no. 4 (2016): 287–92. http://dx.doi.org/10.1557/adv.2016.95.
Повний текст джерелаAn, Yuan, Kailin Ren, Luqiao Yin, and Jianhua Zhang. "Modeling on Monolithic Integration Structure of AlGaN/InGaN/GaN High Electron Mobility Transistors and LEDs: 2DEG Density and Radiative Recombination." Electronics 12, no. 5 (February 22, 2023): 1087. http://dx.doi.org/10.3390/electronics12051087.
Повний текст джерелаNITTA, JUNSAKU. "SPIN RELATED TRANSPORT IN RASHBA 2DEG SYSTEMS." International Journal of Modern Physics B 22, no. 01n02 (January 20, 2008): 107. http://dx.doi.org/10.1142/s021797920804613x.
Повний текст джерелаFARID, BEHNAM. "ON THE RESPONSE OF COMPOSITE FERMIONS TO WEAK ELECTROSTATIC POTENTIALS." International Journal of Modern Physics B 18, no. 22 (September 20, 2004): 3047–55. http://dx.doi.org/10.1142/s0217979204026378.
Повний текст джерелаChauhan, Prashant, Candice Thomas, Tyler Lindemann, Geoffrey C. Gardner, J. Gukelberger, M. J. Manfra, and N. P. Armitage. "Measurements of cyclotron resonance of the interfacial states in strong spin–orbit coupled 2D electron gases proximitized with aluminum." Applied Physics Letters 120, no. 14 (April 4, 2022): 142105. http://dx.doi.org/10.1063/5.0087401.
Повний текст джерелаRodríguez, Eduardo Martín, and Estrella González R. "GaAs/AlGaAs nanoheterostructures: Simulation and application on high mobility transistors." Ingeniería e Investigación 31, no. 1 (January 1, 2011): 144–53. http://dx.doi.org/10.15446/ing.investig.v31n1.20535.
Повний текст джерелаThalhammer, Stefan, Andreas Hörner, Matthias Küß, Stephan Eberle, Florian Pantle, Achim Wixforth, and Wolfgang Nagel. "GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm." Micromachines 13, no. 2 (January 19, 2022): 147. http://dx.doi.org/10.3390/mi13020147.
Повний текст джерелаTan, Yuting, Vladimir Dobrosavljević, and Louk Rademaker. "How to Recognize the Universal Aspects of Mott Criticality?" Crystals 12, no. 7 (June 30, 2022): 932. http://dx.doi.org/10.3390/cryst12070932.
Повний текст джерелаZIMBOVSKAYA, NATALIYA A., та JOSEPH L. BIRMAN. "DEFORMED FERMI SURFACE THEORY OF MAGNETO–ACOUSTIC RESPONSE IN MODULATED QUANTUM HALL SYSTEMS NEAR ν=1/2". International Journal of Modern Physics B 13, № 08 (30 березня 1999): 859–68. http://dx.doi.org/10.1142/s0217979299000722.
Повний текст джерелаSheu, Gene, Yu-Lin Song, Ramyasri Mogarala, Dupati Susmitha, and Kutagulla Issac. "Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation." Micromachines 13, no. 2 (January 22, 2022): 169. http://dx.doi.org/10.3390/mi13020169.
Повний текст джерелаZavjalov, Alexey, Sergey Tikhonov, and Denis Kosyanov. "TiO2–SrTiO3 Biphase Nanoceramics as Advanced Thermoelectric Materials." Materials 12, no. 18 (September 7, 2019): 2895. http://dx.doi.org/10.3390/ma12182895.
Повний текст джерелаNiu, Di, Quan Wang, Wei Li, Changxi Chen, Jiankai Xu, Lijuan Jiang, Chun Feng, et al. "The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT." Micromachines 12, no. 2 (January 26, 2021): 131. http://dx.doi.org/10.3390/mi12020131.
Повний текст джерелаFang, Yi, Ling Chen, Yuqi Liu, and Hong Wang. "Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes." Micromachines 13, no. 6 (May 26, 2022): 830. http://dx.doi.org/10.3390/mi13060830.
Повний текст джерелаBartoš, I., and B. Rosenstein. "Deviations from Quantized Hall Conductivity and Current Density Distribution in Finite 2DEG Samples." International Journal of Modern Physics B 11, no. 22 (September 10, 1997): 2683–706. http://dx.doi.org/10.1142/s0217979297001325.
Повний текст джерелаFauzi, Najihah, Rahil Izzati Mohd Asri, Mohamad Faiz Mohamed Omar, Asrulnizam Abd Manaf, Hiroshi Kawarada, Shaili Falina, and Mohd Syamsul. "Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors." Micromachines 14, no. 2 (January 27, 2023): 325. http://dx.doi.org/10.3390/mi14020325.
Повний текст джерелаAnda, André, Darius Abramavičius, and Thorsten Hansen. "Two-dimensional electronic spectroscopy of anharmonic molecular potentials." Physical Chemistry Chemical Physics 20, no. 3 (2018): 1642–52. http://dx.doi.org/10.1039/c7cp06583c.
Повний текст джерелаYashchyshyn, Yevhen, Paweł Bajurko, Jakub Sobolewski, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Paweł Prystawko, et al. "Graphene/AlGaN/GaN RF Switch." Micromachines 12, no. 11 (October 31, 2021): 1343. http://dx.doi.org/10.3390/mi12111343.
Повний текст джерелаRaja, P. Vigneshwara, Nandha Kumar Subramani, Florent Gaillard, Mohamed Bouslama, Raphaël Sommet, and Jean-Christophe Nallatamby. "Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties." Electronics 10, no. 24 (December 13, 2021): 3096. http://dx.doi.org/10.3390/electronics10243096.
Повний текст джерелаWEIS, JÜRGEN. "Hall Potential Profiles in Quantum Hall Samples Measured by a Low-Temperature Scanning Force Microscope." International Journal of Modern Physics B 21, no. 08n09 (April 10, 2007): 1297–306. http://dx.doi.org/10.1142/s0217979207042768.
Повний текст джерелаYe, Tianyu, R. G. Mani, and W. Wegscheider. "Microwave Reflection From The Microwave Photo-Excited High Mobility GaAs/AlGaAs Two-Dimensional Electron System." MRS Proceedings 1617 (2013): 19–24. http://dx.doi.org/10.1557/opl.2013.1158.
Повний текст джерелаNakata, H., K. Fujii, M. Saitoh, and T. Ohyama. "Photoluminescence of Two-Dimensional Electron System in Modulation-Doped GaAs Quantum Well." International Journal of Modern Physics B 15, no. 28n30 (December 10, 2001): 3897–900. http://dx.doi.org/10.1142/s0217979201008949.
Повний текст джерелаZhang, Penghao, Luyu Wang, Kaiyue Zhu, Qiang Wang, Maolin Pan, Ziqiang Huang, Yannan Yang, et al. "Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication." Micromachines 14, no. 8 (July 29, 2023): 1523. http://dx.doi.org/10.3390/mi14081523.
Повний текст джерелаYe, Tianyu, Ramesh Mani, and Werner Wegscheider. "Microwave reflection study of ultra-high mobility GaAs/AlGaAs 2D-electron system at large filling factors." MRS Proceedings 1635 (2014): 69–74. http://dx.doi.org/10.1557/opl.2014.107.
Повний текст джерелаPatrizi, Barbara, Concetta Cozza, Adriana Pietropaolo, Paolo Foggi, and Mario Siciliani de Cumis. "Synergistic Approach of Ultrafast Spectroscopy and Molecular Simulations in the Characterization of Intramolecular Charge Transfer in Push-Pull Molecules." Molecules 25, no. 2 (January 20, 2020): 430. http://dx.doi.org/10.3390/molecules25020430.
Повний текст джерелаWang, Hongyue, Yijun Shi, Yajie Xin, Chang Liu, Guoguang Lu, and Yun Huang. "Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs." Micromachines 13, no. 2 (January 25, 2022): 176. http://dx.doi.org/10.3390/mi13020176.
Повний текст джерелаCHEN, YONG P., Z. H. WANG, R. M. LEWIS, P. D. YE, L. W. ENGEL, D. C. TSUI, L. N. PFEIFFER, and K. W. WEST. "AC MAGNETOTRANSPORT IN REENTRANT INSULATING PHASES OF TWO-DIMENSIONAL ELECTRONS NEAR 1/5 AND 1/3 LANDAU FILLINGS." International Journal of Modern Physics B 18, no. 27n29 (November 30, 2004): 3553–56. http://dx.doi.org/10.1142/s0217979204027001.
Повний текст джерелаDe Sio, Antonietta, Xuan Trung Nguyen, and Christoph Lienau. "Signatures of Strong Vibronic Coupling Mediating Coherent Charge Transfer in Two-Dimensional Electronic Spectroscopy." Zeitschrift für Naturforschung A 74, no. 8 (August 27, 2019): 721–37. http://dx.doi.org/10.1515/zna-2019-0150.
Повний текст джерелаAnna, Jessica M., Yin Song, Rayomond Dinshaw, and Gregory D. Scholes. "Two-dimensional electronic spectroscopy for mapping molecular photophysics." Pure and Applied Chemistry 85, no. 7 (April 26, 2013): 1307–19. http://dx.doi.org/10.1351/pac-con-12-10-21.
Повний текст джерелаNanayakkara, T. R., R. L. Samaraweera, A. Kriisa, U. Kushan Wijewardena, S. Withanage, C. Reichl, W. Wegscheider, and R. G. Mani. "Influence of microwave photo-excitation on the transport properties of the high mobility GaAs/AlGaAs 2D electron system." MRS Advances 4, no. 61-62 (2019): 3347–52. http://dx.doi.org/10.1557/adv.2020.30.
Повний текст джерелаWang, Haiping, Haifan You, Jiangui Yang, Minqiang Yang, Lu Wang, Hong Zhao, Zili Xie, and Dunjun Chen. "Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors." Micromachines 13, no. 12 (December 13, 2022): 2210. http://dx.doi.org/10.3390/mi13122210.
Повний текст джерелаSun, Youlei, Ying Wang, Jianxiang Tang, Wenju Wang, Yifei Huang, and Xiaofei Kuang. "A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer." Micromachines 10, no. 2 (January 26, 2019): 91. http://dx.doi.org/10.3390/mi10020091.
Повний текст джерелаTAKEHANA, K., Y. IMANAKA, T. TAKAMASU, and M. HENINI. "INFLUENCE OF NEARBY QD LAYER ON 2DES IN QUANTUM HALL REGIME." International Journal of Modern Physics B 21, no. 08n09 (April 10, 2007): 1445–49. http://dx.doi.org/10.1142/s0217979207042987.
Повний текст джерелаTakaoka, Sadao, Kenichi Oto, and Kazuo Murase. "Magnetocapacitance Investigation of Quantum Hall Effect and Edge States." International Journal of Modern Physics B 11, no. 22 (September 10, 1997): 2593–619. http://dx.doi.org/10.1142/s0217979297001295.
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