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Добірка наукової літератури з теми "Tungsten Diselenide (WSe2)"

Автор: Grafiati
Опубліковано: 6 вересня 2023

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Статті в журналах з теми "Tungsten Diselenide (WSe2)"

1

Tien, Tsung-Mo, Yu-Jen Chung, Chen-Tang Huang, and Edward L. Chen. "Fabrication of WS2/WSe2 Z-Scheme Nano-Heterostructure for Efficient Photocatalytic Hydrogen Production and Removal of Congo Red under Visible Light." Catalysts 12, no. 8 (August 3, 2022): 852. http://dx.doi.org/10.3390/catal12080852.

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Анотація:
In this study, a novel tungsten disulfide/tungsten diselenide (WS2/WSe2) heterojunction photocatalyst by a facile hydrothermal process with great capable photocatalytic efficiency for hydrogen evolution from water and organic compound removal was discussed. The WS2/WSe2 heterojunction photocatalyst to form heterojunctions to inhibit the quick recombination rate of photo-response holes and electrons is reflected to be a useful method to enhance the capability of photocatalysis hydrogen production. The hydrogen production rate of the WS2/WSe2 photocatalyst approach is 3856.7 μmol/g/h, which is 12 and 11 folds the efficiency of bare WS2 and WSe2, respectively. Moreover, the excellent photocatalytic performance for Congo Red (CR) removal (92.4%) was 2.4 and 2.1 times higher than those of bare WS2 and WSe2, respectively. The great photocatalytic efficiency was owing to the capable electrons and holes separation of WS2/WSe2 and the construction of Z-scheme heterostructure, which possessed vigorous photocatalytic oxidation and reduction potentials. The novel one-dimensional structure of WS2/WSe2 heterojunction shortens the transport pathway of photo-induced electrons and holes. This work provided an insight to the pathway of interfacial separation and transferring for induced charge carriers, which can refer to the interfacial engineering of developed nanocomposite photocatalysts. It possessed great capable photocatalytic efficiency of hydrogen production and organic dye removal. This study offers an insight to the route of interfacial migration and separation for induced charge carriers to generating clean hydrogen energy and solve environmental pollution issue.
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2

Neupane, Tikaram, Quinton Rice, Sungsoo Jung, Bagher Tabibi, and Felix Jaetae Seo. "Exciton Dephasing in Tungsten Diselenide Atomic Layer." Journal of Nanoscience and Nanotechnology 20, no. 7 (July 1, 2020): 4502–4. http://dx.doi.org/10.1166/jnn.2020.17593.

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Анотація:
An intrinsic exciton dephasing is the coherence loss of exciton dipole oscillation, while the total exciton dephasing originates from coherence loss due to exciton–exciton interaction and excitonphonon coupling. In this article, the total exciton dephasing time of tungsten diselenide (WSe2) atomic layers was analyzed as functions of excitation intensity with exciton–exciton coupling strength and temperature with exciton–phonon coupling strength. It was hypothesized that the total exciton dephasing time is shortened as the exciton–exciton interaction and the exciton–phonon coupling are increased. The coherence loss analysis revealed that the exciton dephasing time of WSe2 atomic layers is due to mainly the temperature rather than the excitation intensity.
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3

Zhang, Xian. "Characterization of Layer Number of Two-Dimensional Transition Metal Diselenide Semiconducting Devices Using Si-Peak Analysis." Advances in Materials Science and Engineering 2019 (September 10, 2019): 1–7. http://dx.doi.org/10.1155/2019/7865698.

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Анотація:
Atomically thin materials such as semiconducting transition metal diselenide materials, like molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2), have received intensive interests in recent years due to their unique electronic structure, bandgap engineering, ambipolar behavior, and optical properties and have motivated investigations for the next-generation semiconducting electronic devices. In this work, we show a nondestructive method of characterizing the layer number of two-dimensional (2-D) MoSe2 and WSe2 including single- and few-layer materials by Raman spectroscopy. The related photoluminescence properties are also studied as a reference. Although Raman spectroscopy is a powerful tool for determining the layer number of 2-D materials such as graphene and molybdenum disulfide (MoS2), there have been difficulties in precisely characterizing the layer number for MoSe2 and WSe2 by Raman spectroscopy due to the uncertain shifts during the Raman measurement process and the lack of multiple separated Raman peaks in MoSe2 and WSe2 for referencing. We then compared the normalized Si peak with MoSe2 and WSe2 and successfully identified the layer number of MoSe2 and WSe2. Similar to graphene and MoS2, the sample layer number is found to modify their optical properties up to 4 layers.
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4

Yadav, Dr Saurabh Kumar. "Optoelectronic Behavior of Free Standing Al Wire Over Monolayer WSe2." International Journal of Recent Technology and Engineering (IJRTE) 11, no. 2 (July 30, 2022): 14–17. http://dx.doi.org/10.35940/ijrte.b7010.0711222.

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Анотація:
In this manuscript, we reported the electronic and optical behavior of free standing Aluminium nanowire mounted on tungsten diselenide (WSe2) sheet. The density functional theory has been used as a toolset for all computational calculations. We mounted the aluminum nanowire over a 2-dimensional sheet of tungsten diselenide and investigated the modulated optoelectronic properties of it. Based on our studies, we majorly found a conductive behavior of the proposed structure along with a strong absorption in visible range. Due to its prominent optical properties, the proposed structure will be very useful in futuristic optoelectronics devices such as photovoltaic, laser, optical sensors.
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5

Patel, P. R., J. R. Rathod, Haresh S. Patel, K. D. Patel, and V. M. Pathak. "Structural and Optical Characterization of Tungsten Diselenide Crystals Grown by DVT Technique." Advanced Materials Research 665 (February 2013): 53–57. http://dx.doi.org/10.4028/www.scientific.net/amr.665.53.

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Анотація:
WSe2 is a member of groupVI Transition Metal Dichalcogenides (TMDCs) and has been observed to be a highly stable semiconducting material. It has been grown in crystal form using a direct vapour transport technique in present case. The grown WSe2 crystals were characterized for the structural properties using X-ray diffraction technique (XRD). The hexagonal structure was confirmed through this analysis. Using the data of XRD, various parameters like crystalline size, lattice parameters, micro strain, dislocation density, unit cell volume, unit cell density, growth fault and deformation fault probability etc were found. It was seen that the micro strain, dislocation density and growth & deformation fault probabilities were found to be very low in WSe2 crystals. The grown WSe2 crystals were characterized for optical properties using UV-VIS-NIR spectroscopy. The absorption spectra of WSe2 grown in present case revealed the fact that WSe2 posses direct band gap around 1.38eV. Layered di-chalcogenides WSe2 (or MoSe2) are used for desired applications such as in photo-conversion devices.
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6

Bandyopadhyay, Avra S., Gustavo A. Saenz, and Anupama Kaul. "Characterization of Few layer Tungsten diselenide based FET under Thermal Excitation." MRS Advances 2, no. 60 (2017): 3721–26. http://dx.doi.org/10.1557/adv.2017.490.

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Анотація:
Abstract:Two-dimensional (2D) materials are very promising with respect to their integration into optoelectronic devices. Monolayer tungsten diselenide (WSe2) is a direct-gap semiconductor with a bandgap of ∼1.6eV, and is therefore a complement to other two-dimensional materials such as graphene, a gapless semimetal, and boron nitride, an insulator. The direct bandgap distinguishes monolayer WSe2 from its bulk and bilayer counterparts, which are both indirect gap materials with smaller bandgaps. This sizable direct bandgap in a two-dimensional layered material enables a host of new optical and electronic devices. In this work, a comprehensive analysis of the effect of optical excitation on the transport properties in few-layer WSe2 is studied. Monolayer WSe2 flakes from natural WSe2 crystals were transferred onto Si/SiO2 (270nm) substrates by mechanical exfoliation. The flakes were observed under an optical microscope. A FET based on mechanically exfoliated WSe2 was fabricated using photolithography with Molybdenum as metal contact and Silicon as back gate and the electronic properties were measured in a wide range of temperatures. The mobility of our device was found to be 0.2 cm /V-S at room temperature. The schottky barrier height was found to decrease from 80 meV to 25 meV as the gate voltage increases.
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7

Kagkoura, Antonia, Christina Stangel, Raul Arenal, and Nikos Tagmatarchis. "Molybdenum Diselenide and Tungsten Diselenide Interfacing Cobalt-Porphyrin for Electrocatalytic Hydrogen Evolution in Alkaline and Acidic Media." Nanomaterials 13, no. 1 (December 22, 2022): 35. http://dx.doi.org/10.3390/nano13010035.

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Анотація:
Easy and effective modification approaches for transition metal dichalcogenides are highly desired in order to make them active toward electrocatalysis. In this manner, we report functionalized molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2) via metal-ligand coordination with pyridine rings for the subsequent covalent grafting of a cobalt-porphyrin. The new hybrid materials were tested towards an electrocatalytic hydrogen evolution reaction in both acidic and alkaline media and showed enhanced activity compared to intact MoSe2 and WSe2. Hybrids exhibited lower overpotential, easier reaction kinetics, higher conductivity, and excellent stability after 10,000 ongoing cycles in acidic and alkaline electrolytes compared to MoSe2 and WSe2. Markedly, MoSe2-based hybrid material showed the best performance and marked a significantly low onset potential of −0.17 V vs RHE for acidic hydrogen evolution reaction. All in all, the ease and fast modification route provides a versatile functionalization procedure, extendable to other transition metal dichalcogenides, and can open new pathways for the realization of functional nanomaterials suitable in electrocatalysis.
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8

Zhao, Yuzhou, Chenyu Zhang, Daniel D. Kohler, Jason M. Scheeler, John C. Wright, Paul M. Voyles, and Song Jin. "Supertwisted spirals of layered materials enabled by growth on non-Euclidean surfaces." Science 370, no. 6515 (October 22, 2020): 442–45. http://dx.doi.org/10.1126/science.abc4284.

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Анотація:
Euclidean geometry is the fundamental mathematical framework of classical crystallography. Traditionally, layered materials are grown on flat substrates; growing Euclidean crystals on non-Euclidean surfaces has rarely been studied. We present a general model describing the growth of layered materials with screw-dislocation spirals on non-Euclidean surfaces and show that it leads to continuously twisted multilayer superstructures. This model is experimentally demonstrated by growing supertwisted spirals of tungsten disulfide (WS2) and tungsten diselenide (WSe2) draped over nanoparticles near the centers of spirals. Microscopic structural analysis shows that the crystal lattice twist is consistent with the geometric twist of the layers, leading to moiré superlattices between the atomic layers.
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9

Tran, Thi Nhan, Thi Theu Luong, Quang Huy Tran, Viet Bac T. Phung, and Van An Dinh. "Aromatic Volatile Organic Compounds Adsorption on Tungsten Diselenide Monolayer." Journal of Physics: Conference Series 2485, no. 1 (April 1, 2023): 012005. http://dx.doi.org/10.1088/1742-6596/2485/1/012005.

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Abstract In this work, we performed a density functional theory calculation to systematically investigate the adsorption and evaluate the adsorption performance of aromatic volatile organic compounds, benzene and toluene, on WSe2 monolayer. The most favourable adsorption configurations of gas molecules with the parallel orientation of the benzene ring to the substrate surface are explored by computing the binding energies as a function of spatial coordinates and carefully optimizing geometrical structures. The calculations pointed out that gas molecules could diffuse across the substrate along the diffusion paths with quite low diffusion potential barriers, about 180 meV for benzene and 130 meV for toluene molecules. We found that both gases are physisorbed on WSe2 monolayer with moderate adsorption energies, short recovery times, and large response lengths. The gas adsorption causes the bandgap reduction of 26 meV and a slight work function increase of the substrate. There is a charge transfer from the substrate onto the gas molecules, this may cause a resistance decrease of the p-type semiconductor substrate. WSe2 monolayer is quite sensitive to benzene and toluene, and could be suggested as an aromatic gas sensing material.
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10

Lee, Hyeonji, Seongin Hong, and Hocheon Yoo. "Interfacial Doping Effects in Fluoropolymer-Tungsten Diselenide Composites Providing High-Performance P-Type Transistors." Polymers 13, no. 7 (March 30, 2021): 1087. http://dx.doi.org/10.3390/polym13071087.

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Анотація:
In this study, we investigated the p-doping effects of a fluoropolymer, Cytop, on tungsten diselenides (WSe2). The hole current of the Cytop–WSe2 field-effect transistor (FET) was boosted by the C–F bonds of Cytop having a strong dipole moment, enabling increased hole accumulation. Analysis of the observed p-doping effects using atomic force microscopy (AFM) and Raman spectroscopy shed light on the doping mechanism. Moreover, Cytop reduces the electrical instability by preventing the adsorption of ambient molecules on the WSe2 surface. Annealing Cytop deposited on WSe2 eliminated the possible impurities associated with adsorbates (i.e., moisture and oxygen) that act as traps on the surface of WSe2. After thermal annealing, the Cytop–WSe2 FET afforded higher p-type conductivity and reduced hysteresis. The combination of the Cytop–WSe2 FET with annealing provides a promising method for obtaining high-performance WSe2 p-type transistors.
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Більше джерел

Дисертації з теми "Tungsten Diselenide (WSe2)"

1

Kuba, Jakub. "Studium fotoluminiscence tenkých vrstev MoS2." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2016. http://www.nusl.cz/ntk/nusl-254284.

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The thesis deals with study of thin layers of transition metal dichalcogenides, especially of molybdenum disulfide. Nanostructures were fabricated on two-dimensional crystals of MoS2 and WSe2. Within followed analysis attention was paid to the photoluminescence properties. In the thesis transition metal dichalcogenides are reviewed and description of the modified process of preparation by micromechanical exfoliation is given.
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2

Tsai, Tsu-Yang, and 蔡子揚. "The Fabrication of P Channel Tungsten Diselenide(WSe2) MOS Field Effect Transistors." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/f2g2v2.

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3

Gu, Shih-Yu, and 顧世煜. "Characterization of the Microdisk Lasers with Two-Dimensional Tungsten Diselenide (WSe2) Atomic Layer." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/nngtxs.

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Анотація:
碩士
國立交通大學
光電工程研究所
107
The nano-scale thickness and higher quantum yield compared to the other two-dimensional materials made transition metal dichalcogenides (TMDCs) a good candidate for realizing ultra-small coherent light emission devices. However, TMDCs lasers encountered obstacles for practical application since the output power of TMDCs lasers were still relatively low in contrast to traditional semiconductors. In this work, we integrated the silicon nitride microdisk with monolayer tungsten diselenide (WSe2) and varying the geometry of the microdisks to directly increase the lasing emission efficiency of monolayer WSe2. There were two parts of experiments in the thesis. The first part of the experiment will focus on how to realize the microdisk cavity and the desired whispering gallery mode that could couple with the emission wavelength of WSe2 and characterized the lasing behavior. With the help of FEM simulation and the electron beam lithography, we designed and fabricated the microdisks for studying and analyzing the performance of the TMDC lasers. In the second part, our goal is to increase the lasing emission efficiency of the TMDC microdisk lasers. Therefore, we changed the geometry of the microdisk cavity with scatterer and notch structure to fulfil the goal. Although both microdisks have coupled with the WSe2 on the top, the lasing performances were highly different due to their respective whispering gallery mode confinement, quality factor, and slope efficiency. Moreover, we compared the lasing behaviors of the scatterer, notch, and general microdisks to realize the improvements of TMDC lasers by varying the geometry. This demonstration of TMDC lasers might be useful towards optoelectronics for high-performance and low power consumption optical applications.
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4

Lin, Hsiang-Ting, and 林相廷. "Gold Metasurface Manipulate Circular Dichroism of Photoluminescence from Two-Dimensional Tungsten Diselenide (WSe2) Atomic Layer." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/66365784435199526428.

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Анотація:
碩士
國立交通大學
光電工程研究所
105
Circular polarized photoluminescence from two dimensional material Tungsten Diselenide (WSe2) atomic layer was manipulated with gold chiral metasurface both at low temperature and room temperature. At low temperature, intrinsic optical chirality of WSe2 has been excited, associated with chiral-resonant mode in chiral metasurface shift dimer nanorods, both enhanced and reversed circular dichroism has been achieved. Although WSe2 is not a chiral gain material at room temperature, the chiral-resonant mode of metasurface is strong enough to generate circular polarized photoluminescence combining with WSe2. Our work integrate two novel system to efficiently manipulate circular polarized light emission and form a compact device due to both gain material and structures are low dimensional. The room-temperature-workable chiral emission bring this device close to practical applications such as optical information technologies and chip-scale bio-sensing.
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5

Cheng, Chia-Chin, and 鄭嘉晉. "Hydrogen plasma treated monolayer Molybdenum Disulfide (MoS2) in Hydrogen evolution reaction and the growth and applications of Tungsten Diselenide / Molybdenum Disulfide (WSe2/MoS2) monolayer heterostructure with atomically sharp interface." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/73424734927890572341.

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Анотація:
博士
國立交通大學
材料科學與工程學系所
105
Two-dimensional layered transition metal dichalcogenides (TMDs) materials such as Molybdenum disufide (MoS2) have been recognized as one of the low-cost and highly efficient electrocatalysts for hydrogen evolution reaction (HER). On the other hand, TMDs have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. The crystal edges, rather than the basal planes, of MoS2 have been identified as the active sites for HER performance, but they only account for a small percentage of the surface area, of MoS2 monolayer. Here, we report a simple and efficient approach that involves using a remote hydrogen-plasma process to creating S-vacancies on the basal plane of a monolayer crystalline MoS2; this process not only can generate high density of S-vacancies but also can maintain the morphology and structure of MoS2 monolayer, as confirmed with Atomic force microscopy (AFM) characterizations. The density of S-vacancies (defects) on the basal plane of MoS2 monolayers resulting from the remote hydrogen-plasma process can be tuned and play a critical role in HER, as evidenced by the results of electrical measurements. A lowered overpotential, from 727mV to 183mV, and a decreased Tafel slope, from 164mV/dec to 77mV/dec, as compared to those of a pristine MoS2 monolayer are  observed. We found  several times enhancement in the capacitance of the hydrogen- plasma-treated  MoS2 monolayer from the electrical double layer capacitance (EDLC) measurement, Moreover, the stability test shows these materials have high durability in acid environment. The H2-plasma-treated MoS2 also provides an excellent platform for systematic and fundamental study of defect-property relationships in TMDs, which provides insights for future applications including electrical, optical and magnetic devices. Second, we report a two-step epitaxial growth of lateral heterojunction WSe2-MoS2 monolayer with an atomically sharp interface, instead of preferred TMD alloy, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface which can be evidenced by high resolution TEM.  From the electrical transport curves, we found the lateral heterostructure WSe2-MoS2 monolayer display apparent p-n junction and thus photovoltaic effect. Our spatially connected TMD lateral heterojunctions are potential candidates for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors.
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Тези доповідей конференцій з теми "Tungsten Diselenide (WSe2)"

1

Pan, Feng, Jefferson Dixon, Sahil Dagli, and Jennifer Dionne. "A High-Quality-Factor Chiral Metasurface for Valley-Polarized Emission and Chiral Exciton-Polaritons." In CLEO: Fundamental Science. Washington, D.C.: Optica Publishing Group, 2023. http://dx.doi.org/10.1364/cleo_fs.2023.ff2d.6.

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2

Chen, Yu-Ling, Ya-Hsin Tseng, Yen-Chun Chen, Wen-Hao Chang, Tsing-Hua Her, and Chih-Wei Luo. "Femtosecond-Laser Ablation of Monolayer Tungsten Diselenide (WSe2) on Sapphire." In CLEO: Applications and Technology. Washington, D.C.: OSA, 2018. http://dx.doi.org/10.1364/cleo_at.2018.jtu2a.4.

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3

Zhou, Pengshang, Shalini Singh, Pieter Schiettecatte, and Zeger Hens. "Synthesis of Colloidal Tungsten Diselenide (WSe2) Nanocrystals by Hot Injection Method." In nanoGe Fall Meeting 2018. València: Fundació Scito, 2018. http://dx.doi.org/10.29363/nanoge.fallmeeting.2018.120.

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4

Zhou, Pengshang, Shalini Singh, Pieter Schiettecatte, and Zeger Hens. "Synthesis of Colloidal Tungsten Diselenide (WSe2) Nanocrystals by Hot Injection Method." In nanoGe Fall Meeting 2018. València: Fundació Scito, 2018. http://dx.doi.org/10.29363/nanoge.nfm.2018.120.

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5

Lin, Hsiang-Ting, Chiao-Yun Chang, Pi-Ju Cheng, Ming-Yang Li, Chia-Chin Cheng, Shu-Wei Chang, Lain-Jong Li, Chih-Wei Chu, Pei-Kuen Wei, and Min-Hsiung Shih. "Circular Polarized Emission of Tungsten Diselenide (WSe2) Atomic Layers with Plasmonic Metasurface." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2018. http://dx.doi.org/10.1364/cleo_si.2018.stu4n.5.

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6

Pimentel, Joao Vitor, Manuel Evaristo, Tomas Polcar, and Albano Cavaleiro. "Self-lubricating W-S-C-Cr tribological coatings deposited by r.f. magnetron sputtering." In 13th International Conference on Plasma Surface Engineering September 10 - 14, 2012, in Garmisch-Partenkirchen, Germany. Linköping University Electronic Press, 2013. http://dx.doi.org/10.3384/wcc2.283-286.

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Анотація:
Tribological coatings composed of transition metal dichalcogenides (TMD) have long been studied for their excellent self-lubricant properties. However, they exhibit low load-bearing capacity, and their performance tends to deteriorate significantly in the presence of humidity. In previous works, doping disulfides and diselenides of tungsten and molybdenum has proven to be a way of greatly improving the tribological performance of this class of films in different environments. In this work, thin films were deposited by r.f. magnetron sputtering on silicon and steel samples, using two targets (carbon and chromium) and tungsten disulfide pellets. The final composition was controlled by the number of WS2 pellets and the ratio of the power applied to the targets. The carbon content was fixed at approximately 40 at.% in all depositions. The chromium content in the coatings was varied in the range 0 – 13.5 at.% and the S/W ratio was approximately 1.25 in all compositions in the series. The coatings were characterized in regard to their hardness, adhesion, chemical composition and bonding, microstructure and morphology, as well as their tribological behaviour.
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7

Lin, H. T., C. Y. Chang, P. J. Cheng, M. Y. Li, C. C. Cheng, S. W. Chang, L. J. Li, C. W. Chu, P. K. Wei, and M. H. Shih. "Manipulated Circular Polarized Emission of Tungsten Diselenide (WSe2) Atomic Layers with Chiral Plasmonic Metasurface." In 2018 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2018. http://dx.doi.org/10.7567/ssdm.2018.m-2-02.

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