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Статті в журналах з теми "Tunable RF MEMS impedance matching"
Guo, X. L., J. Huang, Z. L. Wang, H. H. Yin, Z. J. Zhang, M. Shi, and H. Jiang. "Tunable Matching Network Using MEMS Switches." Advanced Materials Research 765-767 (September 2013): 2575–78. http://dx.doi.org/10.4028/www.scientific.net/amr.765-767.2575.
Повний текст джерелаIannacci, Jacopo, Giuseppe Resta, Paola Farinelli, and Roberto Sorrentino. "RF-MEMS Components and Networks for High-Performance Reconfigurable Telecommunication and Wireless Systems." Advances in Science and Technology 81 (September 2012): 65–74. http://dx.doi.org/10.4028/www.scientific.net/ast.81.65.
Повний текст джерелаFigur, Sascha A., Friedbert van Raay, Rüdiger Quay, Peter Lohmiller, Larissa Vietzorreck, and Volker Ziegler. "RF-MEMS variable matching networks and switches for multi-band and multi-mode GaN power amplifiers." International Journal of Microwave and Wireless Technologies 6, no. 3-4 (March 12, 2014): 265–76. http://dx.doi.org/10.1017/s175907871400021x.
Повний текст джерелаBhatia, Vinay, Sukhdeep Kaur, Kuldeep Sharma, Punam Rattan, Vishal Jagota, and Mohammed Abdella Kemal. "Design and Simulation of Capacitive MEMS Switch for Ka Band Application." Wireless Communications and Mobile Computing 2021 (July 12, 2021): 1–8. http://dx.doi.org/10.1155/2021/2021513.
Повний текст джерелаSorrentino, Roberto, Paola Farinelli, Alessandro Cazzorla, and Luca Pelliccia. "RF-MEMS Application to RF Tuneable Circuits." Advances in Science and Technology 100 (October 2016): 100–108. http://dx.doi.org/10.4028/www.scientific.net/ast.100.100.
Повний текст джерелаQin Shen and N. S. Bar. "Distributed MEMS tunable matching network using minimal-contact RF-MEMS varactors." IEEE Transactions on Microwave Theory and Techniques 54, no. 6 (June 2006): 2646–58. http://dx.doi.org/10.1109/tmtt.2006.872943.
Повний текст джерелаSaha, Shimul C., Ulrik Hanke, Håkon Sagberg, Tor A. Fjeldly, and Trond Sæther. "Tunable Lowpass Filter with RF MEMS Capacitance and Transmission Line." Active and Passive Electronic Components 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/502465.
Повний текст джерелаPalson, C. L., D. D. Krishna, B. R. Jose, J. Mathew, and M. Ottavi. "Memristor Based Planar Tunable RF Circuits." Journal of Circuits, Systems and Computers 28, no. 13 (February 11, 2019): 1950225. http://dx.doi.org/10.1142/s0218126619502256.
Повний текст джерелаIannacci, J. "Reconfigurable RF-MEMS-based impedance matching networks for a hybrid RF-MEMS/CMOS class-E power amplifier." Microsystem Technologies 25, no. 12 (June 8, 2019): 4709–19. http://dx.doi.org/10.1007/s00542-019-04510-3.
Повний текст джерелаGholamian, Sholeh, and Ebrahim Abbaspour-Sani. "Design and Simulation of RF MEMS Tunable Spiral Inductor." Advanced Materials Research 403-408 (November 2011): 4148–51. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.4148.
Повний текст джерелаДисертації з теми "Tunable RF MEMS impedance matching"
Laouini, Mariem. "Conception, simulation et mesures de différents circuits reconfigurables utilisant des commutateurs MEMS RF et des commutateurs à matériaux à changement de phase (PCM)." Electronic Thesis or Diss., Limoges, 2023. https://aurore.unilim.fr/theses/nxfile/default/15037a69-5484-4258-a2c0-9a2beb9183c1/blobholder:0/2023LIMO0020.pdf.
Повний текст джерелаThis manuscript represents the thesis work that mainly deals with the design of RF MEMS switches for reconfigurable circuits. A solution that solves the problem of trapping phenomenon in the dielectric of the switch has been proposed using Ta/Ta2O5 dielectric. This RF MEMS switch, operating at a frequency of 20 GHz, has showed reliable operation without the occurrence of the dielectric-trapping phenomenon. It also gave a high capacitance value of 350 fF and a high capacitive contrast of seven. These components are then integrated into the design of a reflective type phase shifter using the Lange hybrid coupler. The phase shifter guaranteed a 180° phase shift, low insertion losses as well as good isolation below -23 dB.Other RF MEMS switches, using Au/SiN actuation electrode, are used in the design of a 2-bit and a 3-bit phase shifter. The 2-bit phase shifter demonstrated the ability to have a smooth phase shift of 0°, 96° and 186° with an approximate step size of 90°. The PCM phase change materials switches, designed in our XLIM laboratory, were also tested for the design of a phase shifter. The conceived circuit was able to reach the 180° phase shift with, however, high insertion losses. In the last project, we detailed a design of an LC reconfigurable impedance tuner. This impedance adapter is tested on the WolfSpeed CGH40010F transistor and demonstrated a good matching at the output of the transistor at 5 GH. The design of the tuner and its integration into a PCB card on a FR4 substrate are still, however, a matter of concern
Unlu, Mehmet. "An Adjustable Impedance Matching Network Using Rf Mems Technology." Master's thesis, METU, 2003. http://etd.lib.metu.edu.tr/upload/1124676/index.pdf.
Повний текст джерела#955
/40 spacing making a total of 120 MEMS switches in the structure. The variability of the stub length is accomplished by closing the MEMS switch nearest to the required stub length, and making a virtual short circuit to ground. The device is theoretically capable of doing matching to every point on the Smith chart. The device is built on coplanar waveguide transmission lines. It has a center operating frequency of 10GHz, but because of its adjustability property it is expected to work in 1-40GHz range. It has dimensions of 8950 ×
5720µ
m2. This work is the continuation of the first national work on fabrication of RF MEMS devices. The device in this work is fabricated using the surface micromachining technology in the microelectronic facilities of Middle East Technical University.
Nicolas, Dominique. "Conception de circuits RF en CMOS SOI pour modules d'antenne reconfigurables." Thesis, Toulouse 3, 2017. http://www.theses.fr/2017TOU30088/document.
Повний текст джерелаIn the context of mobile applications, design constraints on always more performant and size-constrained emitting front-ends ask to compensate for strong sensitiveness of antennas characteristics to their environment. In particular, it is necessary to control the antenna impedance in order to optimize the energy efficiency of the transmitting front-end. Yet, current solutions are bulky. I this thesis, several ways based on the implementation of variable capacitors have been studied and have led to the design and characterization of new integrated RF devices that can participate to this effort. After a presentation of the context and the state-of-the-art, we propose a study of switched-capacitor-based variable capacitors. This study allowed the design of two variable capacitors in 130 nm CMOS SOI technology for impedance matching and frequency-agile antenna applications. Then, a first demonstrator module of a frequency-agile antenna aiming for 500 MHz-1 GHz LTE bands and using this type of capacitor has been designed and validated. A tunable system allowing the correction of antenna mismatch has then been studied and has led to the design of two 130 nm CMOS SOI integrated circuits. The first circuit is an impedance detector that is able to work on a 0-40 dBm power range and a 600 MHz-2.5 GHz frequency range. The second integrated circuit includes an improved version of the detector with a tunable matching network which both allow the fabrication of an autonomous, compact antenna tunable system showing significant progress relative to the state-of-the-art
Fouladi, Azarnaminy Siamak. "Reconfigurable Impedance Matching Networks Based on RF-MEMS and CMOS-MEMS Technologies." Thesis, 2010. http://hdl.handle.net/10012/5171.
Повний текст джерелаShen, Qin. "8-50 GHz distributed MEMS tunable matching network using minimal contact RF-MEMS varactors /." 2005. http://wwwlib.umi.com/dissertations/fullcit/3189317.
Повний текст джерелаCheng, Chih-Wen, and 鄭智文. "Improved Characteristics of RF Front-end Circuitry Using Tunable MEMS Matching Network." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/nb7x28.
Повний текст джерела國立臺灣科技大學
電子工程系
106
In this thesis, we present a method which shunts a digital tunable capacitor arrays in the matching network at the antenna switch module output port. This digital tunable capacitor arrays has the advantage of low insertion loss, high quality factor and high linearity. It is suitable to be a RF front-end component. Nowadays the LTE frequency bands are more than 3G frequency bands but we still use only one matching network at the antenna switch output. The impedance in this matching network is close to 50ohm, so we put a digital tunable capacitor arrays into this matching network and make it to be a tunable matching network. We can optimize the impedance matching network on each operation frequency bands. We can improve the power-added efficiency and linearity. We get 2.08% ~ 5.64% improvements on the current consumption on each operation frequency bands. In the linearity, we got 0.97dB ~ 3.6dB improvements on the adjacent channel leakage ratio on each operation frequency bands. Referring to the test results, this tunable matching network is a workable solution for improving the current consumption and linearity in each operation frequency bands.
Частини книг з теми "Tunable RF MEMS impedance matching"
Makwana, Dhruv, Arun Mohan, and Saroj Mondal. "A Fully On-Chip Tunable Impedance Matching Strategy for Maximum Power Transfer in RF Energy Harvesting Systems." In Lecture Notes in Electrical Engineering, 101–12. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-6780-1_9.
Повний текст джерелаТези доповідей конференцій з теми "Tunable RF MEMS impedance matching"
Ziraksaz, Fazel, and Alireza Hassanzadeh. "A 23.4-31.9 GHz Tunable RF-MEMS Impedance Matching Network for 5G Power Amplifier." In 2021 29th Iranian Conference on Electrical Engineering (ICEE). IEEE, 2021. http://dx.doi.org/10.1109/icee52715.2021.9544293.
Повний текст джерелаZiraksaz, Fazel, and Alireza Hassanzadeh. "A 23.4-31.9 GHz Tunable RF-MEMS Impedance Matching Network for 5G Power Amplifier." In 2021 29th Iranian Conference on Electrical Engineering (ICEE). IEEE, 2021. http://dx.doi.org/10.1109/icee52715.2021.9544293.
Повний текст джерелаMalmqvist, R., P. Rantakari, C. Samuelsson, M. Lahti, S. Cheng, J. Saijets, T. Vaha-Heikkila, A. Rydberg, and J. Varis. "RF MEMS based impedance matching networks for tunable multi-band microwave low noise amplifiers." In 2009 International Semiconductor Conference (CAS 2009). IEEE, 2009. http://dx.doi.org/10.1109/smicnd.2009.5336539.
Повний текст джерелаUnlu, M., K. Topalli, H. Atasoy, E. Temocin, I. Istanbulluoglu, O. Bayraktar, S. Demir, O. Civi, S. Koc, and T. Akin. "A Reconfigurable RF MEMS Triple Stub Impedance Matching Network." In 2006 European Microwave Conference. IEEE, 2006. http://dx.doi.org/10.1109/eumc.2006.281272.
Повний текст джерелаSharma, Ashish Kumar, and Navneet Gupta. "Impedance matching for RF-MEMS based microstrip patch antenna." In 2014 11th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON). IEEE, 2014. http://dx.doi.org/10.1109/ecticon.2014.6839775.
Повний текст джерелаMaune, Holger, Mohsen Sazegar, and Rolf Jakoby. "Tunable impedance matching networks for agile RF power amplifiers." In 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011. IEEE, 2011. http://dx.doi.org/10.1109/mwsym.2011.5972681.
Повний текст джерелаMaune, H., M. Sazegar, and R. Jakoby. "Tunable impedance matching networks for agile RF power amplifiers." In 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011. IEEE, 2011. http://dx.doi.org/10.1109/mwsym.2011.5973541.
Повний текст джерелаDomingue, Frederic, Ammar B. Kouki, and Raafat R. Mansour. "Tunable microwave amplifier using a compact MEMS impedance matching network." In 2009 European Microwave Conference (EuMC). IEEE, 2009. http://dx.doi.org/10.23919/eumc.2009.5296314.
Повний текст джерелаIannacci, J., D. Masotti, T. Kuenzig, and M. Niessner. "A reconfigurable impedance matching network entirely manufactured in RF-MEMS technology." In SPIE Microtechnologies, edited by Ulrich Schmid, José Luis Sánchez-Rojas, and Monika Leester-Schaedel. SPIE, 2011. http://dx.doi.org/10.1117/12.886186.
Повний текст джерелаWiens, Alex, Olof Bengtsson, Christian Kohler, Daniel Kienemund, Mohammad Nikfalazar, Holger Maune, Andreas Friederich, Joachim R. Binder, Wolfgang Heinrich, and Rolf Jakoby. "Tunable impedance matching networks on printed ceramics for output matching of RF-power transistors." In 2014 44th European Microwave Conference (EuMC). IEEE, 2014. http://dx.doi.org/10.1109/eumc.2014.6986479.
Повний текст джерелаЗвіти організацій з теми "Tunable RF MEMS impedance matching"
Barker, Scott N. RF-MEMS Based Tunable Matching Network. Fort Belvoir, VA: Defense Technical Information Center, October 2003. http://dx.doi.org/10.21236/ada418038.
Повний текст джерела