Готові списки джерел за темами / Transition Metal Di-chalcogenide

Добірка наукової літератури з теми "Transition Metal Di-chalcogenide"

Автор: Grafiati
Опубліковано: 6 вересня 2023

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Статті в журналах з теми "Transition Metal Di-chalcogenide"

1

Yam, Vivian Wing-Wah. "Molecular design of luminescent metal-based materials." Pure and Applied Chemistry 73, no. 3 (January 1, 2001): 543–48. http://dx.doi.org/10.1351/pac200173030543.

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A series of soluble di- and polynuclear transition-metal acetylides with rich luminescence behavior have been designed and successfully isolated. The photophysical and photochemical properties have been studied. Luminescent polynuclear metal complexes have also been obtained based on the metal chalcogenide building block. These high-nuclearity transition-metal chalcogenide complexes have been structurally characterized and shown to display rich luminescence behavior. Various approaches and strategies to design and synthesize luminescent polynuclear metal complexes that may find potential applications as chemosensors and luminescence signalling devices will also be described.
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2

Yang, Jun-Feng, Braham Parakash, Jens Hardell, and Qian-Feng Fang. "Tribological properties of transition metal di-chalcogenide based lubricant coatings." Frontiers of Materials Science 6, no. 2 (April 22, 2012): 116–27. http://dx.doi.org/10.1007/s11706-012-0155-7.

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3

Sokolov, Maxim N., Alexander V. Anyushin, Rita Hernandez-Molina, Rosa Llusar, and Manuel G. Basallote. "Hydroxylated phosphines as ligands for chalcogenide clusters: self assembly, transformations and stabilization." Pure and Applied Chemistry 89, no. 3 (March 1, 2017): 379–92. http://dx.doi.org/10.1515/pac-2017-0105.

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AbstractThis contribution is a documentation of recent advances in the chemistry of chalcogenide polynuclear transition metal complexes coordinated with mono- and di-phosphines functionalized with hydroxo groups. A survey of complexes containing tris(hydroxymethyl)phosphine (THP) is presented. The influence of the alkyl chain in bidentate phosphines, bearing the P–(CH2)x–OH arms, is also analyzed. Finally, isolation and structure elucidation of the complexes with HP(OH)2, P(OH)3, As(OH)3, PhP(OH)2, stabilized by coordination to Ni(0) and Pd(0) centers embedded into chalcogenide clusters, is discussed.
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4

Chaudhary, Karan, Manoj Trivedi, Dhanraj T. Masram, and Nigam P. Rath. "Transition-metal complexes of group 12 with 1,1′-bis(phosphanyl)ferrocene ligands." Acta Crystallographica Section C Structural Chemistry 77, no. 5 (April 26, 2021): 240–48. http://dx.doi.org/10.1107/s2053229621004162.

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The syntheses of four new cadmium and zinc complexes with 1,1′-bis(phosphanyl)ferrocene ligands and their phosphine chalcogenide derivatives are reported. The complexes were characterized by elemental analyses and IR, 1H NMR, 31P NMR and electronic absorption spectroscopy. The crystal structures of dichlorido[1-diphenylphosphinoyl-1′-(di-tert-butylphosphanyl)ferrocene-κ2 O,P]cadmium(II), [CdCl2{(C17H14OP)(C13H22P)Fe}] or CdCl2(κ2 P,O-dppOdtbpf) (1), bis[μ-(tert-butyl)(1′-diphenylphosphinoylferrocen-1-yl)phosphinato-κ3 O,O′:O′′]bis[chloridozinc(II)], [Zn2{(C9H13O2P)(C17H14OP)Fe}2Cl2] or [ZnOCl{κ2 O,O′-Ph2POFcPO2(t-Bu)}]2 (2), 1,1′-bis(di-tert-butylthiophosphinoyl)ferrocene, [Fe(C13H22PS)2] or dtbpfS2 (3), and [1,1′-bis(dicyclohexylphosphanyl)ferrocene-κ2 P,P′][chlorido/cyanido(0.25/1.75)]zinc(II), [Zn(CN)1.75Cl0.25{(C17H26P)2Fe}] or Zn(CN)2(κ2-dcpf) (4), were determined crystallographically. Compound 1 has tetrahedral geometry in which the CdII centre is coordinated by one dppOdtbpf ligand in a κ2-manner and by two Cl atoms, while compound 2 displays a centrosymmetric dimeric unit in which two oxide atoms bridge the two Zn atoms to generate an eight-membered ring. Compound 3 revealed a sandwich structure with both phosphane groups sulfurized. In compound 4, the ZnII atom adopts a tetrahedral geometry by coordinating to the 1,1′-bis(dicyclohexylphosphanyl)ferrocene ligand in a κ2-manner and to two cyanide ligands.
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5

Joe, Jemee, Hyunwoo Yang, Changdeuck Bae, and Hyunjung Shin. "Metal Chalcogenides on Silicon Photocathodes for Efficient Water Splitting: A Mini Overview." Catalysts 9, no. 2 (February 2, 2019): 149. http://dx.doi.org/10.3390/catal9020149.

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In the photoelectrochemical (PEC) water splitting (WS) reactions, a photon is absorbed by a semiconductor, generating electron-hole pairs which are transferred across the semiconductor/electrolyte interface to reduce or oxidize water into oxygen or hydrogen. Catalytic junctions are commonly combined with semiconductor absorbers, providing electrochemically active sites for charge transfer across the interface and increasing the surface band bending to improve the PEC performance. In this review, we focus on transition metal (di)chalcogenide [TM(D)C] catalysts in conjunction with silicon photoelectrode as Earth-abundant materials systems. Surprisingly, there is a limited number of reports in Si/TM(D)C for PEC WS in the literature. We provide almost a complete survey on both layered TMDC and non-layered transition metal dichalcogenides (TMC) co-catalysts on Si photoelectrodes, mainly photocathodes. The mechanisms of the photovoltaic power conversion of silicon devices are summarized with emphasis on the exact role of catalysts. Diverse approaches to the improved PEC performance and the proposed synergetic functions of catalysts on the underlying Si are reviewed. Atomic layer deposition of TM(D)C materials as a new methodology for directly growing them and its implication for low-temperature growth on defect chemistry are featured. The multi-phase TM(D)C overlayers on Si and the operation principles are highlighted. Finally, challenges and directions regarding future research for achieving the theoretical PEC performance of Si-based photoelectrodes are provided.
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6

Devi, Anjna, Neha Dhiman, Narender Kumar, Wadha Alfalasi, Arun Kumar, P. K. Ahluwalia, Amarjeet Singh, and Nacir Tit. "Ferromagnetism in Defected TMD (MoX2, X = S, Se) Monolayer and Its Sustainability under O2, O3, and H2O Gas Exposure: DFT Study." Nanomaterials 13, no. 10 (May 15, 2023): 1642. http://dx.doi.org/10.3390/nano13101642.

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Анотація:
Spin-polarized density-functional theory (DFT) has been employed to study the effects of atmospheric gases on the electronic and magnetic properties of a defective transition-metal dichalcogenide (TMD) monolayer, MoX2 with X = S or Se. This study focuses on three single vacancies: (i) molybdenum “VMo”; (ii) chalcogenide “VX”; and (iii) di-chalcogenide “VX2”. Five different samples of sizes ranging from 4 × 4 to 8 × 8 primitive cells (PCs) were considered in order to assess the effect of vacancy–vacancy interaction. The results showed that all defected samples were paramagnetic semiconductors, except in the case of VMo in MoSe2, which yielded a magnetic moment of 3.99 μB that was independent of the sample size. Moreover, the samples of MoSe2 with VMo and sizes of 4 × 4 and 5 × 5 PCs exhibited half-metallicity, where the spin-up state becomes conductive and is predominantly composed of dxy and dz2 orbital mixing attributed to Mo atoms located in the neighborhood of VMo. The requirement for the establishment of half-metallicity is confirmed to be the provision of ferromagnetic-coupling (FMC) interactions between localized magnetic moments (such as VMo). The critical distance for the existence of FMC is estimated to be dc≅ 16 Å, which allows small sample sizes in MoSe2 to exhibit half-metallicity while the FMC represents the ground state. The adsorption of atmospheric gases (H2O, O2, O3) can drastically change the electronic and magnetic properties, for instance, it can demolish the half-metallicity characteristics. Hence, the maintenance of half-metallicity requires keeping the samples isolated from the atmosphere. We benchmarked our theoretical results with the available data in the literature throughout our study. The conditions that govern the appearance/disappearance of half-metallicity are of great relevance for spintronic device applications.
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7

Martinez, L. M., M. D. Teran, R. R. Chianelli, S. R. J. Hennadige, and S. R. Singamaneni. "Magnetic Defects in Transitional Metal Di-Chalcogenide Semiconducting Layers." MRS Advances 3, no. 6-7 (2018): 351–57. http://dx.doi.org/10.1557/adv.2018.110.

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ABSTRACTIn this work, we report on the electron spin resonance (ESR) studies performed on few-layered nanocrystalline (NCs) MoS2, WS2, and TiS2 prepared using hydrothermal and vapor transport methods. From the temperature dependent ESR spectra collected from MoS2 NCs, we have identified adsorbed oxygen species, sulphur vacancies, thio- and oxo-Mo5+ related paramagnetic defect centers. WS2 NCs have exhibited W+3 and oxo-W+5 paramagnetic defect spin species. TiS2 NCs showed defects such as Fe3+ (unwanted), oxygen and sulfur vacancies. This work demonstrates the usage of spin-sensitive spectroscopy such as ESR in unravelling the defects which contain unpaired electron spin centers in layered NCs two-dimensional materials.
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8

KIRITO, CHO, Naomi Sawamoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Hitoshi WAKABAYASHI, Ryo Yokogawa, and Atsushi Ogura. "Conformal deposition of WS2 layered film by low-temperature metal-organic chemical vapor deposition." Japanese Journal of Applied Physics, April 7, 2023. http://dx.doi.org/10.35848/1347-4065/accb62.

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Анотація:
Abstract WS2 metal-organic (MO) chemical vapor deposition was demonstrated on Si and Al2O3 substrates. Novel MO W precursor of n-BuNC-W(CO)5 and (t-C4H9)2S2. as S precursor were synthesized for the purpose. The obtained films were layered 1T structure as a typical transition metal di-chalcogenide with almost the stoichiometric compositions. The film was significantly stable for 60 days shelf time in the air atmosphere. The layered structure can cover conformally on the 3-simensional fin structure with the layers parallel to the fin surface everywhere.
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9

"(Invited) Advanced CMOS Device Technologies Discussed Also with Transition-Metal Di-Chalcogenide (TMDC) Channel." ECS Meeting Abstracts, 2015. http://dx.doi.org/10.1149/ma2015-02/29/1098.

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10

Lu, Li, Sander Reniers, Yunzheng Wang, Yuqing Jiao та Robert Edward Simpson. "Reconfigurable InP waveguide components using the Sb2S3 phase change material". Journal of Optics, 5 липня 2022. http://dx.doi.org/10.1088/2040-8986/ac7e5a.

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Анотація:
Abstract Reconfigurable waveguide components are promising building blocks for photonic neural networks and as an optical analogue to Field-Programmable Gate Arrays. By changing the effective index of the waveguide, reconfigurable waveguide components can achieve on-chip light routing and modulation. In this paper, we design and demonstrate an Sb2S3-reconfigurable InP membrane Mach-Zehnder Interferometer (MZI) on a silicon substrate. Sb2S3, which has tunable refractive index and low absorption in the near-infrared spectrum, was patterned the InP waveguide MZIs to make an optical switch in the telecomms conventional-band. By laser induced crystallisation of the Sb2S3, it was possible to control interference in the MZI and achieve 18 dB on/off switching at 1540~nm. Laser reamorphisation and reversible switching of the Sb2S3 layer resulted in damage to the waveguide structure. However, simulations show that a transition metal di-chalcogenide (TMDC) 2-dimensional crystal layers can act as efficient thermal barriers that prevent thermal damage to the waveguide during laser amorphisation. Therefore, combining Sb2S3 with InP waveguides seems to be a feasible approach to achieve low-loss reprogrammable waveguide components for on-chip photonics routing and neural networks.
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