Дисертації з теми "Transition metal Chalcogenides"
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Shaw, Graham Andrew. "Solvent mediated synthesis of metal chalcogenides." Thesis, University College London (University of London), 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.326065.
Повний текст джерелаNahai-Williamson, Paul. "Tuning ordered states in transition metal chalcogenide systems." Thesis, University of Cambridge, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609901.
Повний текст джерелаEaglesham, D. J. "Charge density waves and their phase transitions in the transition metal chalcogenides." Thesis, University of Bristol, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375017.
Повний текст джерелаPickup, David M. "The structure and characterisation of amorphous transition-metal chalcogenides." Thesis, University of Reading, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308039.
Повний текст джерелаNakanishi, Makoto. "Study of magnetic ordering of vanadium in layered transition metal chalcogenides." 京都大学 (Kyoto University), 2007. http://hdl.handle.net/2433/136959.
Повний текст джерелаZhu, Bairen, and 朱柏仁. "Optical study on two dimensional transition metal dichalcogenides." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2014. http://hdl.handle.net/10722/208045.
Повний текст джерелаpublished_or_final_version
Physics
Doctoral
Doctor of Philosophy
Tsang, Ka-yi, and 曾家懿. "Two dimensional transition metal dichalcogenides grown by chemical vapor deposition." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2014. http://hdl.handle.net/10722/212604.
Повний текст джерелаpublished_or_final_version
Physics
Master
Master of Philosophy
Walton, Richard I. "The characterisation and structure of amorphous and poorly crystalline transition-metal chalcogenides." Thesis, University of Reading, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388467.
Повний текст джерелаLi, Tianyang. "Synthesis and Characterization of Atomic Scale Derivatives and Clusters of Transition Metal Chalcogenides." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1460839448.
Повний текст джерелаWANG, MENGJIAO. "Colloidal Synthesis of Transition Metal Chalcogenides and Their Applications in Electrocatalytic Water Splitting." Doctoral thesis, Università degli studi di Genova, 2019. http://hdl.handle.net/11567/941181.
Повний текст джерелаLo, Wing-yin, and 盧詠妍. "Syntheses, characterization and emission studies of luminescent homo-and heterometallic clusters based on coinage metal alkynyl andchalcogenide core." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B31245791.
Повний текст джерелаJürgensen, Lasse [Verfasser]. "Thin Films of Transition Metal Chalcogenides: Novel Molecular Pathways and Catalytic Applications / Lasse Jürgensen." München : Verlag Dr. Hut, 2021. http://d-nb.info/1232846740/34.
Повний текст джерелаGatuna, Ngigi wa. "Intrinsic vacancy chalcogenides as dilute magnetic semiconductors : theoretical investigation of transition-metal doped gallium selenide /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/10595.
Повний текст джерелаGuo, G. Y. "Study of the electronic structures of layer-structure transition metal chalcogenides and their intercalation complexes." Thesis, University of Cambridge, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233953.
Повний текст джерелаKoeckerling, Martin Dr rer nat. "Über metallreiche Halogenide und Chalkogenide früher Übergangsmetalle - Metal-rich halides and chalcogenides of early transition elements." Gerhard-Mercator-Universitaet Duisburg, 2001. http://www.ub.uni-duisburg.de/ETD-db/theses/available/duett-09112001-094019/.
Повний текст джерелаStahl, Juliane [Verfasser], and Dirk [Akademischer Betreuer] Johrendt. "Low-dimensional transition metal chalcogenides : Synthesis and characterization of beta-FeSe- and Fe3GeTe2-related structures / Juliane Stahl ; Betreuer: Dirk Johrendt." München : Universitätsbibliothek der Ludwig-Maximilians-Universität, 2019. http://d-nb.info/1204005559/34.
Повний текст джерелаBelke, Christopher [Verfasser]. "Untersuchung von Dünnschicht-Übergangsmetall-Chalkogeniden hinsichtlich ihrer elektrischen Eigenschaften : Investigation of thin film transition metal chalcogenides regarding their electrical properties / Christopher Belke." Hannover : Gottfried Wilhelm Leibniz Universität, 2021. http://d-nb.info/1230550666/34.
Повний текст джерелаGhorbani-Asl, Mahdi [Verfasser], Thomas [Akademischer Betreuer] Heine, Ulrich [Akademischer Betreuer] Kleinekathöfer, Thomas [Akademischer Betreuer] Frauenheim, and Agnieszka [Akademischer Betreuer] Kuc. "Electronic transport through two-dimensional transition-metal chalcogenides / Mahdi Ghorbani-Asl. Betreuer: Thomas Heine. Gutachter: Thomas Heine ; Ulrich Kleinekathöfer ; Thomas Frauenheim ; Agnieszka Kuc." Bremen : IRC-Library, Information Resource Center der Jacobs University Bremen, 2014. http://d-nb.info/1087315506/34.
Повний текст джерелаLima, Bruno Sanches de. "Crescimento de monocristais e investigação experimental de propriedades físicas de calcogenetos de nióbio." Universidade de São Paulo, 2017. http://www.teses.usp.br/teses/disponiveis/97/97135/tde-03122018-164756/.
Повний текст джерелаRecently was demonstrated that it is possible to suppress the charge density waves (CDW) ground states while, simultaneously, a superconductor state emerges in several transition metal chalcogenides (TMC), by means of hydrostatic pressure or chemical doping. Within this context, this work presents a systematic study on physical properties of two Nb chalcogenides, NbTe2 and NbTe4. Our results demonstrate that NbTe2 is another example of a TMC which exhibit both stabilities at atmospheric pressure and without doping. Regarding the physical properties of NbTe4, we have demonstrated that Te deficiency increases significantly the anomaly in the electrical resistivity as function of temperature behavior related with the CDW formation. At the same time, Te deficiency can also cause a SC state to emerge at 5.5 K. This work also presents a review of the binary phase diagram, Nb-Te, and some changes are proposed. Nb5Te4 and Nb3Te4 were identified as high temperature phases originated from eutectoid reactions. Furthermore, our results demonstrated that the region between the phases NbTe2 and NbTe4 are, in fact, a two-phase region, differently from what is proposed in the actual version of the phase diagram. Also, during this work, another chalcogenide was investigated, NiTe2. Our results demonstrate that Ti can be intercalted between the Van der Waals gaps of the structure and consequently a superconductor state emerges at 4.5 K. The critical temperature is found to be insensitive to hydrostatic pressure. Band structure strongly suggests that NiTe2 could be another example of a superconductor with topological aspects in its Fermi surface.
Prasai, Kiran. "Gap Engineering and Simulation of Advanced Materials." Ohio University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1503393620371266.
Повний текст джерелаRook, John. "Some studies of transition metal chalcogenide fluorides." Thesis, University of Leicester, 1987. http://hdl.handle.net/2381/33876.
Повний текст джерелаDenholme, Saleem J. "Novel nanostructures in transition metal chalcogenide systems." Thesis, University of Glasgow, 2011. http://theses.gla.ac.uk/3077/.
Повний текст джерелаKing, Martin O. "Spectroscopy and microscopy of transition metal chalcogenide nanomaterials." Thesis, University of Glasgow, 2013. http://theses.gla.ac.uk/4506/.
Повний текст джерелаRedman, Helen. "The growth of transition metal chalcogenide thin films using chemical vapour deposition." Thesis, University of Reading, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.312584.
Повний текст джерелаMONDOLONI, CHRISTIAN. "Contribution a l'etude de la valence anormale de l'ytterbium et du thulium dans yb : :(1-x)tm::(x)se et yb::(1-y)tm::(y)s." Paris 7, 1988. http://www.theses.fr/1988PA077122.
Повний текст джерелаPedicini, Anthony F. "Investigations into structure and properties of atomically-precise transition metal-chalcogenide clusters of CrTe and ligated Cr6Te8(PEt3)6." VCU Scholars Compass, 2017. http://scholarscompass.vcu.edu/etd/4963.
Повний текст джерелаBerretil, Slimane. "Proprietes electroniques des semi-conducteurs magnetiques gamo : :(4)s::(8), gamo::(4)se::(8), gamo::(4)se::(4)te::(4) et ganb::(4)s::(8)." Paris 6, 1987. http://www.theses.fr/1987PA066262.
Повний текст джерелаChakraborty, Shibalik. "Topological origin of glass formation, rigidity and stress transitions, conductivity and fragility in specially homogeneous Heavy Metal Oxide and Chalcogenide systems." University of Cincinnati / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1393237827.
Повний текст джерелаAleksandrov, Krasimir. "Preparation, structure and properties of new ternary chalcogenides and germanides of the metals from the first transition series, Cr, Mn, Fe and Ni." [S.l. : s.n.], 2005. http://deposit.ddb.de/cgi-bin/dokserv?idn=975687867.
Повний текст джерелаBaum, Zachary John. "Reactivity of Tetraborylmethanes and Electronic Structure Calculations of Dimensionally Reduced Materials." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1531736836448112.
Повний текст джерелаCzulucki, Andreas. "Struktur-/Eigenschafts-Beziehungen in ternären Übergangs- und Seltenerdmetall-Pniktid-Chalkogeniden." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-33354.
Повний текст джерелаThe aim of this work was, to evaluate and interpret a relationship between the crystal-chemical properties and the observed unusual behavior in the electrical resistivity (non-magnetic Kondo-effect). Compounds, which show such an effect, are formed by a transition- or actinide-metal with both a group 15 element and a group 16 element of the periodic table. All these compounds crystallizing in the PbFCl type of structure. Because of less crystallographic and chemical information about actinide-metal-pnictide-chalcogenides (i.e. ThAsSe, UPS), intensive investigation were made concerning the crystal-chemistry of ternary phases of the systems M-Pn-Q (M = Zr, Hf, La-Ce; Pn = As, Sb; Q = Se, Te. Our studies were focused on the structurally localization of the observed anomaly in the electrical resistivity and the evaluation of chemical-physical relations of properties. The synthesis of the investigated ternary phases was realized by exothermically Chemical Transport with iodine as transport agent. The dimension of the synthesized crystals allowed a chemical (EDXS, WDXS, ICP-OES, LA-ICP-MS, CIC) and structurally characterization, as well as a determination of the physical properties on one large single crystal. It could be shown, that ZrAs1,4Se0,5 and HfAs1,7Se0,2 reveal a similar unusual behavior in the temperature dependent electrical resistivity, as it was observed in thorium-arsenide-selenides and uranium-phosphide-sulphides. In conclusion, the non-magnetic Kondo-effect, which was found in the low-temperature range (about 15 K), arises from structurally features of the anionic sublattice with arsenic
Bragaglia, Valeria. "Epitaxial Growth and Ultrafast Dynamics of GeSbTe Alloys and GeTe/Sb2Te3 Superlattices." Doctoral thesis, Humboldt-Universität zu Berlin, 2017. http://dx.doi.org/10.18452/18406.
Повний текст джерелаThe growth by molecular beam epitaxy of Ge-Sb-Te (GST) alloys resulting in quasi-single-crystalline films with ordered configuration of intrinsic vacancies is demonstrated. It is shown how a structural characterization based on transmission electron microscopy, X-ray diffraction and density functional theory, allowed to unequivocally assess the vacancy ordering in GST samples, which was so far only predicted. The understanding of the ordering process enabled the realization of a fine tuning of the ordering degree itself, which is linked to composition and crystalline phase. A phase diagram with the different growth windows for GST is obtained. High degree of vacancy ordering in GST is also obtained through annealing and via femtosecond-pulsed laser crystallization of amorphous material deposited on a crystalline substrate, which acts as a template for the crystallization. This finding is remarkable as it demonstrates that it is possible to create a crystalline GST with ordered vacancies by using different fabrication procedures. Growth and structural characterization of GeTe/Sb2Te3 superlattices is also obtained. Their structure resembles that of ordered GST, with exception of the Sb and Ge layers stacking sequence. The possibility to tune the degree of vacancy ordering in GST has been combined with a study of its transport properties. Employing global characterization methods such as XRD, Raman and Far-Infrared spectroscopy, the phase and ordering degree of the GST was assessed, and unequivocally demonstrated that vacancy ordering in GST drives the metal-insulator transition (MIT). In particular, first it is shown that by comparing electrical measurements to XRD, the transition from insulating to metallic behavior is obtained as soon as vacancies start to order. This phenomenon occurs within the cubic phase, when GST evolves from disordered to ordered. In the second part of the chapter, a combination of Far-Infrared and Raman spectroscopy is employed to investigate vibrational modes and the carrier behavior in amorphous and crystalline phases, enabling to extract activation energies for the electron conduction for both cubic and trigonal GST phases. Most important, a MIT is clearly identified to occur at the onset of the transition between the disordered and the ordered cubic phase, consistently with the electrical study. Finally, pump/probe schemes based on optical-pump/X-ray absorption and Terahertz (THz) spectroscopy-probes have been employed to access ultrafast dynamics necessary for the understanding of switching mechanisms. The sensitivity of THz-probe to conductivity in both GST and GeTe/Sb2Te3 superlattices showed that the non-thermal nature of switching in superlattices is related to interface effects, and can be triggered by employing up to one order less laser fluences if compared to GST. Such result agrees with literature, in which a crystal to crystal switching of superlattice based memory cells is expected to be more efficient than GST melting, therefore enabling ultra-low energy consumption.
Mukherjee, Debdyuti. "Electrocatalytic Studies Using Layered Transition Metal Thiphosphates, Metal Chalcogenides and Polymers." Thesis, 2017. http://etd.iisc.ernet.in/2005/3569.
Повний текст джерелаAbdulsalam, Mahmud. "A theoretical investigation of the structural, electronic and optical properties of transition metal chalcogenides." Thesis, 2015. http://hdl.handle.net/10539/19291.
Повний текст джерелаHarvesting renewable energy and the miniaturisation of electronic components are among the major challenges of the 21st century. Transition metal chalcogenides (TMC) have interesting properties that are promising in meeting these challenges. It is therefore important to conduct a systematic theoretical study of the structural, electronic and optical properties of the transition metal chalcogenides as possible components of low dimensional transistors or as solar-energy harvesters. In this work, we present the detailed theoretical investigation of the structural, electronic and optical properties of transition metal chalcogenides MyXz, (where M = Hf, Zr, Tc or Re), (X = S, Se and Te), y and z are integers. The structural properties of TMCs were studied using energy-volume relationship (equation of states (EOS)), equilibrium structural lattice parameters, formation and cohesive energies were extracted from the EOS. Mechanical stability test based on elastic constants and phonon dispersion relation were carried out to determine the strengths of the TMCs against mechanical distortions. The most stable structural congurations were used to investigate electronic properties through partial density of states (PDOS) and band structure analysis. Optical properties (absorption coe cients, refractivity, re ectivity) of some of the TMCs were then computed. Our computations of the structural, electronic and the optical properties were based on density functional theory (DFT). Projector-Augmented wave (PAW) was used to mimic electron-ion interactions and generalised-gradient approximation was used in the exchange correlation functional. Van der Waal's correction terms proposed by Grimme (DFT-D2), Lundqvist and Langreth (vdW-DF) and Tkatchenko- Sche er (vdW-TS) were used to account for long range dispersion forces in addition to PBE and its modi ed version for solids PBEsol. Optical properties were investigated at the many body (GW) and Bethe-Salpeter equation (BSE) levels of approximations. Our results obtained are discussed within the theoretical frame work and compared with experimental and previous theoretical results where available.
Rugut, Elkana Kipkogei. "Numerical simulation of structural, electronic and optical properties of transition metal chalcogenides." Thesis, 2017. http://hdl.handle.net/10539/23602.
Повний текст джерелаIntensive study on structural, electronic and optical properties of bulk transition metal dichalcogenides and dipnictogenides (MX2; where M = V, Nb and X = S, Se, Te, P) was undertaken. A relative stability test was done to determine the most stable ground state configuration via calculation of total ground state energy and volume which was fitted to the third order Birch-Murnaghan equation of state to extract lattice parameters. Cohesive energies of the above mentioned MX2 compounds and their elemental solids were then computed from which formation energies were acquired based on their respective equations of reaction between reactants and product. Its significance was to aid in determining if a material is energetically stable. Elastic constants were predicted from which mechanical properties i.e bulk, Young’s and shear moduli and consequently Poisson’s ratio were resolved by feeding the stiffness matrix onto online elastic tensor analysis tool which facilitated verification of their mechanical stability based on the well-known Born stability conditions which varies from one crystal system to another, at a later stage phonon dispersion curves were plotted after performing phonon calculation based on phonopy code to verify if the materials of concern are dynamically stable. After a material had fulfilled all the above stability tests, its structural study was initiated using various functionals. Functional that described best the structural properties of each individual compound considered was then applied in exploring its electronic and optical properties whose motivation was to find out the most stable phase as well as gauge if these materials could be used in various fields that suits their mechanical and optical properties. Furthermore, from carefully calculated optical spectra, plasma frequencies were analyzed which indicated the possibility of applying a material in plasmonic related fields. In addition to above, other factors to be considered when selecting a given electrode material that are crucial for optoelectronics are good chemical and thermal stabilities, high transparency and excellent conductivity.
XL2018
I-ChuLiang and 梁逸筑. "Sytheses and Characterization of Metal Chalcogenides Base on Mixed Rear-Earth and Transition Metals." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/30878555846446225807.
Повний текст джерелаJianxiao, Xu. "Thermoelectric properties of transition metal oxides and thallium main group chalcogenides." Thesis, 2008. http://hdl.handle.net/10012/3848.
Повний текст джерелаAltschul, Emmeline Beth. "Transition metal solar absorbers." Thesis, 2012. http://hdl.handle.net/1957/33382.
Повний текст джерелаGraduation date: 2013
(10716999), Sayan Roy. "Modeling Ultrathin 2D Transition Metal Di-Chalcogenides (TMDCs) Based on Tungsten for Photovoltaic Applications." Thesis, 2021.
Знайти повний текст джерелаVenkatakrishnan, T. S. "Ruthenium Complexes Of Chiral And Achiral Phosphorus Ligands Based On The P-N-P Motif." Thesis, 2004. http://hdl.handle.net/2005/300.
Повний текст джерелаNien, Yung-Tang, and 粘永堂. "Study of Synthesis, Microstructure and Luminescence of Transition Metals-doped Chalcogenide Phosphors." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/06854153393024543560.
Повний текст джерела國立成功大學
材料科學及工程學系碩博士班
95
Phosphor materials have been widely used in solid state lighting, displays and medical imaging by doping with transition or rare-earth metals. Here we studied the influence of transition metals (Cu, Mn, Cd) on the structure and optical properties of electroluminescent ZnS powders, the preparation of two-band emission of ZnS/ZnO:Mn film for the white light usage, and the Raman properties of ZnS, CdSe, CdS and Zn1-xCdxS nanoparticles (NPs). A series of ZnS:Cu,Cl powders with Cu additions ranging from 40 to 5000ppm were studied by firing at 750-1050oC for 2h in the atmosphere of 3%H2/Ar. X-ray diffraction (XRD) and Raman analyses showed that ZnS:Cu,Cl samples with Cu additions of ≥400ppm exhibited a structure transformation from hexagonal to cubic, which was supposed to result from the Cu incorporation or CuxS precipitation (470cm-1). The red shift of the longitudinal optical (LO) mode in ZnS:Cu,Cl with the increased Cu suggested that Cu ions entered ZnS lattice interstitially and created a tensile strain. The whole series of ZnS:Cu,Cl samples showed significant photoluminescence (PL) in the region of 400-600nm; however, only the samples with Cu additions of ≥400ppm revealed measurable electroluminescence (EL). This difference was supposed to be a result of nano-sized CuxS precipitation in ZnS during the firing treatment, where CuxS acted as the electron emission source to induce the activation of luminescent centers. Red electroluminescent phosphor powders of ZnS:Cu,Mn,Cl and Zn1-xCdxS:Cu,Cl (x=0-0.9) were also prepared by a solid state reaction at 900oC for 2h in a reducing atmosphere. XRD showed that the structure of Zn1-xCdxS:Cu,Cl (Cu:800ppm) transformed from cubic to hexagonal as x increased to 0.2. Similarly, the addition of Mn preferred to the formation of hexagonal ZnS. This unavailability of CuxS to induce the cubic structure transformation in ZnS:Cu,Mn,Cl and Zn1-xCdxS:Cu,Cl may be due to the fact that Mn tends to bond to S in the hexagonal and Zn1-xCdxS stabilizes in a hexagonal structure. EL measurements revealed broad emission bands at 583nm and 614nm for ZnS:Cu,Mn,Cl and Zn0.4Cd0.6S:Cu,Cl, respectively. ZnO:Mn capped with ZnS:Mn (ZnS/ZnO:Mn) phosphor layers were prepared by thermal sulfidation of ZnO:Mn films deposited on Si(100) substrate with the method of RF magnetron sputtering. The PL of the ZnS/ZnO:Mn layer showed a three-band emission, i.e. UV, blue (465nm) and orange (573nm) bands. The chromaticity coordinate of the two-component ZnS/ZnO:Mn phosphor layer, which was estimated from the peak and width of each emission band, showed the potential of producing white light emission. PL measurements revealed that ZnS:Mn powders fired with 1wt% ZnS NPs showed the optimal luminescence intensity when compared to those without or with more ZnS NPs (>1wt%). An appropriate amount of ZnS NPs (1wt%) acting as the flux in the firing process was inferred to avoid the inhomogeneous distribution of Mn2+ as well as the migration of excitation energy to quenching sites and therefore to result in the enhanced PL intensity. ZnS:Mn NPs (~3.1nm) of a cubic structure were prepared by a co-precipitation method and then dispersed with various weights (0.5-8g) into a solution containing ammonium hydroxide, ethanol and tetraethyl orthosilicate (TEOS) for surface coating. The optical properties of PL and diffuse reflection of the SiO2-coated ZnS:Mn powders were found to depend on the quantity of ZnS:Mn NPs in the coating solution. The increased PL intensity of ZnS:Mn at 590nm after SiO2 coating was proposed to result from the inhibition of excitation energy transfer to quenching centers or surface states based on the observation of the reduced absorption in the region of 370-450nm. CdSe, CdS and Zn1-xCdxS NPs were prepared by the TOP process and studied with a Raman spectrometer, revealing very homogeneous size distributions and comparable sizes with the transmission electron microscope (TEM) and UV-vis measurements.
Demeter, Mihaela Carmen. "Spectroscopic study of transition metal compounds." Doctoral thesis, 2001. https://repositorium.ub.uni-osnabrueck.de/handle/urn:nbn:de:gbv:700-2001051714.
Повний текст джерелаWang, Yong-Long, and 汪永龍. "First Principles Studies of Magnetism and Magneto-Optical Properties of Some 3d Transition Metals and Their Multilayers and Cerium Chalcogenides, CeS, CeSe, and CeTe." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/18775924148410047593.
Повний текст джерела國立臺灣大學
物理學研究所
88
Magneto-optical properties in several 3d transition metals, their compounds, and cerium chalcogenides have been studied by using the first principles spin-polarized relativistic linear muffin-tin orbit (SPR-LMTO) method or spin-polarized, orbital polarized relativistic linear muffin-tin orbit (SOPR-LMTO) method with local density approximation or generalized gradient approximation. The calculated Kerr rotation spectra in the FeAu, FePt, and CeTe systems are in good agreement with experiments. We also calculate magnetic moments and the magneto-crystalline anisotropy energy of these systems. We find that magneto-optical Kerr effect depends on the magnetization directions. Based on these results, we propose a new device of magneto-optical recording. In cerium chalcogenides, we use the exact formula to calculate the large Kerr rotation angles and get almost the same results.
Aleksandrov, Krasimir [Verfasser]. "Preparation, structure and properties of new ternary chalcogenides and germanides of the metals from the first transition series, Cr, Mn, Fe and Ni / vorgelegt von Krasimir Aleksandrov." 2005. http://d-nb.info/975687867/34.
Повний текст джерелаTaubitz, Christian. "Investigation of the magnetic and electronic structure of Fe in molecules and chalcogenide systems." Doctoral thesis, 2010. https://repositorium.ub.uni-osnabrueck.de/handle/urn:nbn:de:gbv:700-201006096312.
Повний текст джерелаGhosh, Ram Krishna. "Exploration of Real and Complex Dispesion Realtionship of Nanomaterials for Next Generation Transistor Applications." Thesis, 2013. http://hdl.handle.net/2005/3288.
Повний текст джерела