Дисертації з теми "Transistors organiques ? effet de champ"
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Peltier, Jean-David. "Isomères de position d’indacénodithiophènes : synthèse, propriétés et applications en transistors organiques à effet de champ." Thesis, Rennes 1, 2017. http://www.theses.fr/2017REN1S138/document.
Повний текст джерелаOrganic Field Effect Transistors (OFETs), in which the charge transport is carried through a thin film made of organic molecules represent a transformation of the FET technology regarding that based on Silicon. They offer in particular the possibility to manufacture low cost flexible electronics. This work is focused on the synthesis, the study and the use as active layer in n-type OFETs of novel, electron poor, couples of para- and meta-indacenodithiophenes isomers (para- and meta-IDT). First of all, an introduction to the field of n-type OFETs is presented, followed by the presentation of the synthesis of the IDT derivatives and the comparative analysis of their properties. Finally, the fabrication of the OFETs, their characterization and the optimization of their architecture is described. The performances recorded attest that these derivatives are of great interest for the n-type OFETs. Different 3π-2spiro IDT derivatives are also presented in order to study the IDTs intrinsic properties and to envisage their incorporation as host in phosphorescent organic light-emitting diodes
Kuai, Wenlin. "Faisabilité de transistors organiques à effet de champ fabriqués entièrement en solution." Thesis, Rennes 1, 2017. http://www.theses.fr/2017REN1S013/document.
Повний текст джерелаPresent work deals with the new trend to get highly flexible electronics by using fully Organic Thin-Film Transistor (OTFT) as the basic element of this electronics. Fully organic n-type as well as p-type OTFT processed by inkjet printing are studied. Printing parameters of each ink, jettability, wetting, printability, and patterns optimization, leading to the deposition of conductive contacts, gate insulator and semiconducting active layer are studied. Process of n-type OTFT based on C60 is shown as unreliable, mainly due to the poor solubility of C60 in organic solvent. In the contrary, p-type OTFTs based on Tips-pentacene are much more reliable. The work is a large overview of the issues and the difficulties that have been to jump and to solve in the way to fabricate fully printed organic transistors. Some solutions have been given and new ideas have been proposed
Houin, Geoffroy. "Développement d’amplificateurs sur substrats flexibles à partir de transistors organiques à effet de champ." Thesis, Bordeaux, 2017. http://www.theses.fr/2017BORD0588/document.
Повний текст джерелаOrganic field effect transistors (OFETs) have huge potential in the applications of future electronics, such as flexible circuits and displays or medical application. However, stability and performances of OFETs need to be improved, so as to reach the real market applications.First objective of this work is to realize air stable OFETs with state of the art performance. To that end, several approaches have been applied with special focus on process simplification. Small molecule, dinaphtho[2,3-b:2',3‘-f]thieno[3,2-b]thiophene (DNTT) has been chosen as the active layer for all devices studies. Metal electrodes in combination with oxide interfacial layers were investigated to decrease the contact resistance, which not only affects eventual mobility that can be achieved but also complicates circuit design. A systematic study was carried out to fabricate high capacitance dielectric layer and passivating the surface with proper interfacial layers. These approaches allowed to obtain high performance OFET on plastic substrate with high mobility (2.4cm2.V-1.s-1), high current on/off ratio (> 106), low threshold voltage and no hysteresis As the second objective, OFET devices were simulated using GoldenGate (with Cadence Virtuoso® environment) to derive relevant parameters, which helped to design amplifier circuit. Finally, passive component (resistance) has been developed and final circuit was realized and characterized
Macabies, Romain. "Proprietes et stabilite de l’interface isolant-pentacene dans les transistors organiques a effet de champ." Thesis, Saint-Etienne, EMSE, 2011. http://www.theses.fr/2011EMSE0628/document.
Повний текст джерелаThese recent years, Organic Field-Effect Transistor (OFET) development has significantly improved it performances and it stability. This was made possible, through a better understanding of the mechanisms governing charge transport in these devices. However, some phenomena remain unclear, in particular, at the interface between the semiconductor and the dielectric. Charge carrier trapping which is one of the main causes of charge transport disturbance in organic transistors, is one of them. So, this work aims to investigate such phenomena in pentacene-based transistors.Polar groups and particularly, hydroxyl groups, located at the insulator-semiconductor interface, are the main sources of charge carriers trapping in OFET. To prevent their presence, an OFET fabrication technology based on a passivating dielectric, poor of hydroxyl groups, calcium fluoride-based interfacial layer has been developed. Effect of this layer on pentacene-based transistors operation has been studied, as well as these devices aging under different storage atmosphere (in vacuum and in air) and under electrical stress.Thus, it has been highlighted that an interfacial layer of calcium fluoride with a too high thickness (around 5 nm) changes pentacene layer morphology which results in a quasi-disappearance of charge transport in pentacene in OFET configuration. Aging studies showed that under the effect of CaF2 interfacial layer, even with a very thin thickness (a few nanometers), a greater quantity of moisture is induced in pentacene layer probably due to the hygroscopic nature of calcium fluoride
Hafsi, Bilel. "Réalisation, caractérisation et simulation de composants organiques : transistors à effet de champ et mémoires." Thesis, Lille 1, 2016. http://www.theses.fr/2016LIL10055/document.
Повний текст джерелаThe subject of this thesis adopt an original approach to realize new components (transistor, volatile and non-volatiles memory) based on N type organic semiconductor “PolyeraTM N2200”. First, we have fabricated and optimized organic field effect transistors by modifying some technological parameters related to fabrication. Then, we have analyzed their electrical properties with the help of two-dimensional drift-diffusion simulator using ISE-TCAD®. We studied the fixed surface charges and the effect of the organic semiconductor/oxide interface traps. The dependence of the threshold voltage on the density and energy level of the trap states has been also considered. , by incorporating gold nanoparticles in these devices, we have developed a new device called “NOMFETs” (nanoparticles organic memory field effect transistors), which mimic the behavior of biological synapse by reproducing a facilitating and a depressing drain current with a relative amplitude of about 50% and a dynamic response of about 4s. Studying the charging/discharging dynamics, we demonstrated a typical anti-Hebbien learning function, one of the fundamental mechanisms of the unsupervised learning in biological neural networks. Finally, we developed nonvolatile “FLASH” memory devices, by combining metallic gold nanoparticles and reduced graphene oxide (rGO) monolayer flakes. This double floating gate architecture provided us a good charge trapping ability which include a wide memory window (~68V), a long extrapolated retention time (> 108 s) and strong endurance properties (1000 write/erase cycles)
Devynck, Mélanie. "Transistors à effet de champ : étude des interfaces et amélioration des performances." Thesis, Bordeaux 1, 2012. http://www.theses.fr/2012BOR14569/document.
Повний текст джерелаThe charge transport and injection are strongly dependant of the semiconductor/dielectric and semi-conductor/electrode interfaces quality. Therefore, this studyfocuses on these interfaces in organic field effect transistors (OFETs). The goal is theunderstanding of the relation between the dielectric (roughness, surface energy) or electrode(work function) characteristics and the OFETs performances.First, we investigate the influence of the interfaces modification by SAMs (SelfAssembled Monolayers) in pentacene based OFETs on silicon substrates. Due to the SAMsgrafting such as OTS8 or OTS, the hydroxyls groups are neutralized and the dielectric showsan apolar surface leading to the reduction of the charge traps density. Moreover, a 2Dpentacene growth with large grains on OTS surface contributes to the decrease of the chargetraps density in the bulk. The threshold voltage, subthreshold swing and hysteresis decreasesgive rise to these modifications. The improvement of the charge transport allows us to reachmobility up to 0.6 cm2/Vs.Then, we investigate the electrode surface treatment by fluorinated SAMs such asPFBT, PFHT or PFDT. The better pentacene layer continuity and the increased electrodework function emphasize the morphologic and electronic influences of the SAMs. Thesemodifications lead to the contact resistance reducing and in consequence to an enhancedmobility up to 0.6 cm2/Vs. Finally, devices with a combination of the interfaces treatmentpresent high mean mobility of 1.3 cm2/Vs.On the final part of this study, we concentrate on low voltage C60 or pentacene basedOFETs on glass substrates. Using a dielectric composed of a high-k dielectric as AlOx and athin layer of a low-k dielectric such as phosphonic SAMs (C8-PA or C18-PA) or polymers(PMMA or PVT) allow us to achieve this low voltage condition. The mobility obtained withn-type OFETs (m = 0.4 cm2/Vs) and the small hysteresis (<0.1 V) in p-type OFETs arepromising
Morvan, Marjorie. "Etude des transistors à effet de champ organiques : réalisation d'OFETs ambipolaires et étude des mécanismes d'injection dans les OFETs verticaux." Thesis, Toulouse 3, 2020. http://www.theses.fr/2020TOU30175.
Повний текст джерелаOrganic Field Effect Transistors (OFETs) is increasingly attractive thanks to the possibility of producing lighter components at lower cost and on flexible substrates. Being able to couple a light emission function to a transistor function makes its use more interesting. This is the case with display applications, where the pixels are produced by an active matrix technology of organic light-emitting diodes (AMOLED). Having a light-emitting OFET makes possible to combine an OFET with an organic light-emitting diode (OLED) and thus simplifying the design, the manufacturing steps as well as increasing the lifetime of pixels. During this thesis, the study and manufacture of light-emitting OFETs were carried out using two approaches. The first one is based on the study of ambipolar OFETs based on N, N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13), an n-type semiconductor, and pentacene, a p-type semiconductor. This study constitutes the first step in obtaining electroluminescent OFETs. The fabrication and characterization of these ambipolar OFETs were performed for the first time in the laboratory's research team. A study of their structure was carried out to find the ideal parameters to obtain a balanced charge transport. The optimized structure is a bilayer structure with a pentacene thickness of 8 nm and a PTCDI-C13 thickness of 20 nm. The addition of an emitting layer between the two semiconductors failed to achieve light emission due to excessive charges trapping. However, this study has opened up new perspectives for future work on ambipolar OFETs. The second approach to study light-emitting OFETs is more innovative thanks to the change of the structure from a classic planar structure to a vertical one. This structure has the advantage of being able to easily integrate an OLED structure and has a homogeneous light emission over a large area. The operating principle is totally different from conventional OFETs: here, the current modulation is no longer done by controlling the conductivity in a semiconductor channel, but by controlling the injection of charges at the source electrode. The study of this structure made it possible to obtain luminous organic transistors. Then, the study of charge injection mechanisms allowed us to understand more deeply the operating principe of these transistors. Several materials have been tested as the source electrode: gold, silver, aluminum and ITO (Indium Tin Oxide). This study allowed us to determine the injection mechanism involved, namely the injection of charges by the modulation of the tunnel effect thanks to the band bending induced by the gate effect in the semiconductor layer close to the interface. It has also been identified that the quality of the source electrode/semiconductor interface plays a major role since poor interface quality leads to a drastic decrease in performance
Macabies, Romain. "Proprietes et stabilite de l'interface isolant-pentacene dans les transistors organiques a effet de champ." Phd thesis, Ecole Nationale Supérieure des Mines de Saint-Etienne, 2011. http://tel.archives-ouvertes.fr/tel-00740173.
Повний текст джерелаBraga, Daniele. "Charge transport properties of organic semiconductors : application to field effect transistors." Paris 7, 2009. http://www.theses.fr/2009PA077157.
Повний текст джерелаIn order to go deeper in the knowledge of the fundamentals of Organic Field Effect Transistors (OFETs), we have characterized different typologies of OFETs using rubrene single crystals. The latter are highly ordered organic semiconductors with which high mobility transistors can be fabricated. First we have obtained a detailed picture about the properties of a rubrene single crystal, by analyzing the current-voltage (I-V) characteristics of symmetric diodes with the Space Charge Limited Current (SCLC) theory. A low density of defects and a low density of intrinsic thermally generated carriers have been found to characterize this material. On this basis, we have analyzed metal-semiconductor-field-effect-transistors (MESFETs). These non-conventional devices have been proved to be efficient organic FETs, in which the process of charge carrier injection from the ohmic source contact is controlled by the voltage applied to a non-ohmic gate electrode. Finally, metal-insulator-semiconductor field effect ; transistors (MISFETs) have been considered. The (I-V) trend below the threshold voltage is not exponential, as predicted by the inorganic theory; instead, it is linear with the gate voltage and it follows a pseudo-exponential behaviour only in a narrow transition region. An alternative semi-analytical description has been provided here by taking into account the effect of a localized trap level on the distribution of free charges. The presence of this discrete trap level was highlighted by the previously conducted SCLC analysis
Leydecker, Tim. "Multiresponsive and supramolecular field-effect transistors." Thesis, Strasbourg, 2015. http://www.theses.fr/2015STRAF056/document.
Повний текст джерелаThis thesis explored how, by blending of materials with different electrical characteristics, it is possible to fabricate transistors with new or improved performances. First, organic field-effect transistors based on a single oligothiophene, DH4T, were fabricated and optimized until the measured mobility was superior to that observed in vacuum deposited films. This was achieved through careful tuning of the interfaces using self-assembled monolayers and by strong control of the solvent- evaporation rate. P-type polymers were blended with an n-type polymer. Each resulting solution was used for the fabrication of ambipolar field-effect transistors. These devices were characterized and it was found that for each pair of p- and n-type polymers, a transistor with balanced mobilities and high Ion/Ioff could be fabricated. Finally field-effect transistors based on a blend of P3HT and a photoswitchable diarylethene (DAE-Me) were fabricated. The current was measured during and between irradiations and it was demonstrated that a non-volatile multilevel memory could be fabricated
Collet, Joël. "Monocouches organiques fonctionnalisées : propriétés structurales et électriques : composants électroniques à l'échelle du nanomètre." Lille 1, 1997. http://www.theses.fr/1997LIL10195.
Повний текст джерелаKergoat, Loïc. "Organic transistor-Based DNA sensors." Paris 7, 2010. http://www.theses.fr/2010PA077220.
Повний текст джерелаThis PhD work deals with the use of organic transistors for the development of reagentless and label-free DNA biosensors. First OECTs made of PEDOT:PSS were used and two DNA immobilization methods were successfully performed. Nevertheless, both approaches did not show any modification in the OECT behavior upon DNAhybridization. In a second step, EGOFET configuration was investigated. P3HT and rubrene were studied using water as electrolyte. Both semiconductors showed typical p-type channel behavior ope- rating in accumulation mode at very low voltage (below 1V). The simplicity and readiness of its production reveals a helpful tool for rapid testing of new organic semiconductors. Then PMMA twas blend to P3HT, resulting in improved electrical performance and stability of devices made lof pure P3HT. Topographic investigations by AFM carried out on blends with various PMMA to P3HT ratio reveal a lateral phase separation of the two components. | Finally, this configuration was used for DNA detection. A derivative of P3HT, with carboxylic I acid moieties for DNA grafting was used. Upon probe DNA immobilization, a clear change in the transistor behavior is observed. The off current decreases because of the steric hindrance of DNA strands, blocking ion penetration into the semiconductor bulk. The minimum gate voltage is shifted towards negative voltages because of the negative charges of DNA. Response of the EGOFET upon hybridization is quenched in high ionic concentration solution. This screening effect vanishes when reducing the ion concentration, resulting in an off current drop jupon hybridization. Several experiments have to be performed to fully understand the transduction mechanism
Marmont, Patrick. "Amélioration des performances de transistors organiques en couche mince à base de pentacene par des monocouches auto-assemblées." Paris 7, 2010. http://www.theses.fr/2010PA077042.
Повний текст джерелаThe goal of this study is to improve charge injection by inserting an oriented dipolar monolayer between the gold contact and the semi conductor in an organic thin film transistor OTFT (structure bottom-contact). The source/drain gold contacts were modified with alkanethiols and fluoroalkanethiols self-assembled monolayers. Consistent with the UPS measurements, we observe an increase and a decrease of the OTFT contact resistance respectively with the increase of the work function and the decrease of the work function with the alkanethiol ( SH-(CH₂)₂-(CH₂)₇-CH₃) with the fluorinated molecules ( SH-(CH2)2-(CH2)7-CH3 )and further decrease when the length of the fluorinated molecules is shortened SH- (CH₂)₂-(CF₂)₇-CF₃ )
Gruntz, Guillaume. "Nouvelles architectures moléculaires électrodéficientes et solubles pour les transistors organiques à effet de champ de type n stables à l’air." Thesis, Bordeaux, 2015. http://www.theses.fr/2015BORD0217/document.
Повний текст джерелаOne the main challenges of organic electronics is the fabrication of electronic circuits combining p-type and n-type organic field effect transistors which can be processed by liquid route and are stable in air. Even though many efficient p-type organic materials have been reported, the examples of n-type analogues are rare. The aim of this PhD research work was therefore to design, synthesize and characterize new soluble and electron-acceptor π-conjugated molecules and determine their ability to transport electrons in organic field effect transistors (OFETs) under air. In this aim, the aromatic core of a well-known stable pigment, the Triphenodioxazine (TPDO), was functionalized with solubilizing groups and electron-withdrawing functions to tune the solubility and to yield a higher electron affinity. The various structural modifications achieved provided a complete family of electro-deficient materials. The new compounds were characterized in liquid and solid state, and then integrated in OFETs. Most of them led to an efficient negative charge carrier transport. Hereafter of the rationalization of the results during synthesis, characterization of new materials and physical characterizations of devices, a tetracyano derivative has fulfilled the initial project specifications in terms of solubility, electron mobility and air stability of the performances
Didane, Yahia. "Fonctionnalisation du distyryl-bithiophène : impact sur la structure moléculaire sur les performances électriques des transistors à effet de champ." Aix-Marseille 2, 2009. http://theses.univ-amu.fr.lama.univ-amu.fr/2009AIX22085.pdf.
Повний текст джерелаThe research of new air stable p- and n-type organic semiconductors that are the basis of organic thin film transistors (OTFTs) are of key interest in the development of improved organic electronics. Recently, our research group has reported on distyryl-oligothiophenes as a novel class of p-type organic semiconductors with high mobilities and an exceptional stability of electrical performances in air over time. During work done for this dissertation, different synthetic routes were developed in order to functionalize the distyryl-bithiophene (DS2T) with different functional groups to evaluate the impact of chemical substitutions on electronic properties in OTFT devices. The first introductory chapter is dedicated to a short overview of the economic challenges in the development of OTFTs and the different key issues that need to be addressed. The second chapter is devoted to the functionalization of DS2T with different electron-withdrawing groups (EWGs) as perfluoroalkyl chains or cyano groups to obtain n-type semiconductors. Contrary to what has been expected, thin films based on such molecules act as insulating layers or p-type channels. In addition to experimental results, a study by Density Functional Theory (DFT) is described in order to evaluate the effects of such EWGs in DS2T. The third chapter explains how DS2T was end-substituted by two alkyl chains for the fabrication of OTFTs by the solution phase. The described process offers reduced costs with the great advantage of liquid crystalline properties needed for an optimum molecular organization in the solid phase. The performances of OTFTs prepared by spin-coating, drop-casting and by ink-jet are described and compared to those obtained with OTFTs prepared by vacuum evaporation. Finally, a new synthetic route was developed to rigidify the bithiophene core in order to increase the planarity of the semiconducting molecule and as a consequence to increase the p-stacking in the solid phase. The main purpose of the strategy was to increase the OTFT performances. The X-Ray structure of the bridged compound (kite-DS2T) revealed a concave structure unexpected in the oligothiophene series. Despite this molecular structure, unfavourable as a first instance, an increase by a factor 5 in the p-type mobility is obtained for kite-DS2T as compared to DS2T. At the end of this chapter a chemical modification of the new kite-DS2T is described as a first alternative to switch the system from p-type to n-type
Ternisien, Marc. "Contribution à l'étude des transistors à effet de champ organiques : effet de la fonctionnalisation du diélectrique de grille par des monocouches auto assemblées." Thesis, Lille 1, 2008. http://www.theses.fr/2008LIL10091/document.
Повний текст джерелаThis work deals with the Organic Field Effect Transistor and the effect of Self Assembled Monolayen on the gate dielectric/pentacene interface control. ln a first part, we worked with Pentacene OFET in Top Contact Configuration with gate dielectric modified by SAM Q"-7t ( ended by pyrene or phenyl group). After the surface modification by SAM operated chemically in three steps and characterization, we measured OFETs parameters and we obtained an improvement of the mobility, On/Off ratio and the subthreshold slope is also reduced. We discussed these results in terms of morphology structure of the pentacene active layer. ln a second part, we chemically modified the gate dielectric with pentafluoropheny lpropyltrichlorosilane (C9H6F5Cl3Si), 4-phenylbutyltrichlorosilane (C10H13Cl3Si) and octadecyltrichlorosilane (C18H37SiCl3)) SAMs in one step. These OFETs in Bottom Contact configuration showed mobility value of 0.3 cm²/V.s a subthreshold slope of 0.6 V/dec and an On/Off ratio of 10 8, These results are analyzed in term of interactions between charge carriers and pentacene and dipoles values of SAMs
Ramos, Benjamin. "Etude de diélectriques ferroélectriques pour une application aux transistors organiques : influence sur les performances électriques." Thesis, Toulouse 3, 2017. http://www.theses.fr/2017TOU30304/document.
Повний текст джерелаThis thesis deals with the study of a ferroelectric material as gate dielectric for organic transistor applications. The configuration adopted is bottom-gate top-contact. The semiconductor used is an electron transport material. In a first part, we made organic field effect transistors (OFETs) with a layer of PMMA as a gate dielectric. This material, very studied and well known, serves as reference. We also carried out a study on the channel length, the organic semiconductor deposition rate and the dielectric thickness, in order to deduce the impact of these parameters on OFETs performances. After optimization, we have demonstrated an improvement of the mobility, on/off current ratio, capacitance and a reduction of supply and threshold voltages. These results have been interpreted using electrical characterizations. In a second step, the poly (vinylidenefluoride-co- trifluoroethylene) (P(VDF-TrFE)) ferroelectric material was added to provide a hybrid dielectric with PMMA. This OFET combine the advantages of high permittivity of P(VDF-TrFE) and low roughness of PMMA. A comparative study was carried out with reference transistors. For same dielectric thickness, a reduction of the supply and threshold voltages and an improvement of the mobility is obtained for the OFET implementing ferroelectric material. The discussion of these results is supported by electrical and morphological characterizations
Le, Gall Jérémy. "Transistor organique à effet de champ à grille électrolytique pour le suivi d’organismes photosynthétiques." Thesis, Université de Paris (2019-....), 2020. http://www.theses.fr/2020UNIP7024.
Повний текст джерелаProgresses in microfabrication have made leading-edge technologies available to public laboratories. This has enabled the development of electronic devices in the field of light-emitting diode, photovoltaic cells or even transistors, at relatively small costs. Furthermore, simultaneously to classical field-effect transistors (MOSFET), innovative technologies have been developed, such as organic electrochemical transistor (OECT) or, more recently, electrolyte-gated organic field-effect transistors (EGOFET). While OECTs have been extensively studied for cell culture monitoring, EGOFETs have never been described for that kind of application, despite these transistors being seemingly perfect. Indeed, their possibility of being gated with cell culture medium in direct contact with active parts of the transistor make them ideal for the monitoring of cell cultures.To be able to chemically monitor cell culture, we propose to directly follow in situ dissolved O2 concentration in the electrolyte of an EGOFET, through its electroreduction on the gate electrode. These results allowed us to monitor photosynthetic activity of two different kinds of organisms by measuring EGOFETs’ drain current variations. Indeed, during diurnal step, photosynthetic organisms produce O2 that, by being reduced on the gate, bring down field effect sensed on the organic semiconductor. A strong drain current variation follows (amplified by transistor effect), allowing us to monitor cellular respiration. As first optimisation of the innovative device, we functionalised the gate electrode with photosynthetic organisms, using an alginate hydrogel, to be able to detect organic pollutants or heavy metals. These results lead to new perspectives being developed at the present time using graphene instead of organic semi-conductor
Leroy, Julie. "Synthèse et caractérisation de dérivés d'oligothiophènes pour leur utilisation dans des transistors à effet de champ." Doctoral thesis, Universite Libre de Bruxelles, 2008. http://hdl.handle.net/2013/ULB-DIPOT:oai:dipot.ulb.ac.be:2013/210524.
Повний текст джерелаAfin de remedier a ce probleme, nous avons envisage deux approche: l'une pour la diminution des defauts de plan par l'utilisation de phase cristal liquides; l'autre vise la diminution des defauts dus aux irregularites de la surface du substrat, par l'utilisation de systemes pi relies par un pont covalent.
Les 5,5'-dialkylterthiophenes (chaines allant du propyle au dodecyle) et le 5,5'- dihexylquaterthiophene sont conus pour former des phases cristal liquides. Mais ces dernieres n'apparaissent cependant qu'a des temperatures superieures a 45degC. LEs chaines alkyles utilisees etant toutes des chaines lineaires, notre premiere idee a ete de synthetiser de nouveaux derives avec des chaines alkyles ou alkenyles branchees. Une voie de synthese 'one-pot' permettant de varier aisement les chaines alkyles greffees dans les positions alfa et beta des bi-, ter- et quaterthiophene a ete mise au point. La reaction d'alkylation se fait en presence de n-BuLi et t-BuOK avec des rendements variant entre 80 et 90%. LEs composes obtenus par cette methode ne presentent pas les proprietes requises, c'est pourquoi une nouvelle modification structurale a ete envisagee: la dyssymetrisation. Cette fois les chaines greffees sur les positions alfa et beta sont differentes. De nouvelles voies de synthese ont ete etablies dans ce but. Elles sont basees sur l'heterocouplage de Suzuki qui va permettre la formation d'un lien carbone-carbone entre deux unites oligothiophenes. Ce couplage donne des rendements compris entre 35 et 65%.
Notre connaissance de la formation de comnposes dissymetriques va etre directement appliquee a la formation des unites oligothiophenes reliees par un pont covalent. Quelque soit la nature du pont, il est necessaire de passer par un oligothiophene subtsitue en position alfa et pas omega. Deux types de ponts covalents ont ete utilises, un pont etylene et un pont disulfure, ce qui a requis la mise au point de deux schemas de synthese differents. POur les composes possendant un pont ethylene, un des synthon comporte deja un pont, l'etape finale consiste en un couplage de Suzuki. En ce qui concerne les derives possedant un pont sulfure, la formation du pont se fait lors de la derniere etape.
Les proprietes thermotropes de tous les composes synthetises ont ete mesurees, cela nous a permis de faire une etude comparative dans le but de relier la structure aux proprietes thermotropes. La taille du corps aromatique, la longueur des chaines alkyles, la presence de branchements, d'insaturations sur les chaines laterales, de meme que la dissymetrisation ont ete etudies. Nous avons tentes de correler l'evolution des proprites thermotropes de nos composes avec l'evolution des temperatures de fusion des alcanes et alcenes correspondant. Cela donne de bons resultats pour les derives du terthiophenes, mais l'augmentation de la taille du corps aromatique complique fortement les resultats, LEs constatations les plus importantes sont que la presence de branchements sur les chaines alkyles provoque la diminution des temperatures de transistions des terthiophenes et des quaterthiophenes. Meme si en plus, ces branchements provoquent la perte du caractere fluide pour les terthiophenes. Il est incontestable que la methode qui permet de modifier de facon plus fine les temperatures de transition est la dissymetrisation. Cela nous permet d'obtenir des composes possedant les proprietes rechercheesa a savoir une phase cristal liquide a temperature ambiante. Sans toutefois comprendre le lien subtil entre la structure moleculaire et les proprietes thermotropes.
Afin de comprendre les proprietes de semi-conduction des composes synthetises, nous avons fabriques des transistors a effet de champ avec trois d'entre eux; le 5,5'-dihexylquaterthiophene sert de compose modele, un derive du quaterthiophene possedant une phase cristal liquide a temperature ambiante et derive compose de deux unites hexylquaterthiophene relies par un pont ethylene. Les resultats pour le compose presentant une phase cristal liquide sont peu concluants. IL ne montre aucune proprietes de semi-conduction, ce qui peut s'expliquer par la difference de longueur des chaines alkyles greffees ,qui induit un deplacement lateral defavorable au transport de charges. Pour le compose ponte une mobilite de charge de 0.015cm2/V.s. a ete mesuree ( compose de reference 0.013 cm2/V.s.) avec un dielectrique de rugosite nulle. Nous pouvons conclure que le compose ponte possede bien les proprietes de semi-conduction desirees.
Doctorat en Sciences
info:eu-repo/semantics/nonPublished
Jung, Sungyeop. "Physically-Based Compact Modelling of Organic Electronic Devices." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLX115/document.
Повний текст джерелаIn spite of a remarkable improvement in the performance of organic electronic devices, there is still a lack of rigorous theoretical understanding on the device operation. This thesis is dedicated to establishing practical models of organic electronic devices with a full physical basis, namely a physically-based compact model. A physically-based compact model of a circuit element is a mathematical equation that describes the device operation, and is generally assessed by three criteria: whether it is sufficiently simple to be incorporated in circuit simulators, accurate to make the outcome of the simulators useful to circuit designers, and rigorous to capture physical phenomena occuring in the device. In this context, distinctive features of charge carrier injection and transport in organic semiconductors are incorporated in the models with a particular effort to maintain mathematical simplicity. The concomitant effect on the current-voltage characteristics of prototypical organic diodes and transistors are studied. Parameter extraction methods consistent to the models are presented which enable unambiguity determination of device parameters used for modeling device operation and assessing device performance and properties of organic thin-films and interfaces. The approaches encompass analytical developement of physical equations, two-dimensional numerical simulation based on finite-element method and experimental validation. The original and fully analytical compact models and parameter extraction methods provide fundamental understanding on how energetic disorder in an organic semiconductor thin-film, described by the Gaussian density of states, affects the observable current-voltage characteristics of the devices.Keywords : Organic electronics, device physics, analytical modeling, diodes, field-effect transistors, Gaussian density-of-states
Pouchain, Laurent. "Synthèse et caractérisation de systèmes conjugués dérivés de l'indéno[1,2-b]thiophène pour l'électronique organique." Phd thesis, Université d'Angers, 2010. http://tel.archives-ouvertes.fr/tel-00583380.
Повний текст джерелаEl, Habchi Nguyen Sarah. "Transistors organiques à effet de champ pour une électronique flexible et écoresponsable : étude et optimisation d'OFET de type N sur substrats biosourcés." Electronic Thesis or Diss., Rennes 1, 2022. http://www.theses.fr/2022REN1S091.
Повний текст джерелаThe use of organic materials allows the fabrication of electronic devices at low temperature and on different types of substrates. Organic field effect transistors (OFETs) are one of them, their encouraging electrical performances allow the realization of complex integrated circuits. However, these performances and the electrical and air stability of OFETs still need to be improved. This thesis was part of this context, and consist of two main parts: 1) the achievement of OFETs on rigid substrate at very low temperature 2) the technology transfer to OFETs on flexible biosourced substrate in order to consider new low-cost, portable and even aiming at green and ecoresponsible electronics. For the first part, the objectives were the following : 1) the optimization, the characterization of N-type OFETs and the analysis of their electrical performances, 2) the study of their electrical stability under the effect of a continuous bias, and 3) the improvement of the stability to the ambient environment of these OFETs. For the second part, different objectives were targeted: 1) the optimization of an agar-based film for the fabrication of a biosourced substrate, 2) to ensure the resistance of the film to the different steps of the OFET fabrication, and 3) to study the feasibility of the agar-based OFET to evaluate its electrical stability and to compare its performances to those of the OFET on glass. The obtained results are very encouraging and demonstrated the feasibility of OFET fabricated on these soft biosourced substrates with a field effect mobility µFElin = 7.10-2 cm2/V.s, a threshold voltage VTH = 7 V and a current ratio IDON/ IDOFF = 7.103
Xu, Yong. "Caractérisation et modélisation des propretés électriques et du bruit à basse fréquence dans les transistors organiques à effet de champ (OFETs)." Phd thesis, Université de Grenoble, 2011. http://tel.archives-ouvertes.fr/tel-00747417.
Повний текст джерелаBebiche, Sarah. "OTFTs de type N à base de semiconducteurs π-conjugués : fabrication, performance et stabilité". Thesis, Rennes 1, 2015. http://www.theses.fr/2015REN1S105/document.
Повний текст джерелаThe main goal of this present work consists in the fabrication and optimization of N type organic field effect transistors. Bottom Gate Bottom Contact transistors are performed at low temperature T<120°C. Three different electro-deficient organic molecules are thermally evaporated and used as active layer. OTFTs based on LPP core molecule present low field effect mobility around 10-5cm2/V.s. The optimization study investigated on deposition parameters of this molecule on OTFTs performances does not allow improving this mobility. Moreover gate bias stress measurements reveal important instabilities related to this molecule. Indenfluorene derivatives core (IF) based OTFTs show better performances. Field effect mobility µFE=2.1x10-4 cm2/V is reached using IF(CN2)2 meta in optimized deposition conditions and µFE=1x10-2 cm2/V.s is obtained using IF(CN2)2 para after annealing treatment. The investigated gate bias stress study highlights the good electrical stability of IF(CN2)2 para based OTFTs. Temperature measurements allow us studying the charge transport phenomenon in these indenofluorene derivatives. Fabricated N-type OTFTs are used to perform a first electronic circuit that consists in a logic gate (invertor).Finally this low temperature process led us to achieve OTFTs devices on flexible substrates (PEN)
Robin, Malo. "Développement de transistors à effet de champ organiques et de matériaux luminescents à base de nanoclusters par impression à jet d’encre." Thesis, Rennes 1, 2017. http://www.theses.fr/2017REN1S105/document.
Повний текст джерелаThe objective of this thesis was to demonstrate the potentialities of inkjet printing for driving an HLED containing red phosphorescent metallic clusters, with organic field effect transistors. To achieve this goal, the project was divided into two parts: I) The fabrication and optimization of n-type organic transistors by photolithography and then transfer to inkjet printing. II) Parallel to the development of transistors, I focused on designing luminescent hybrid materials for HLED realization. Concerning transistors, we obtained a better understanding of the factors influencing the charge injection but also the electrical stability for bottom gate/ bottom contact geometry transistor with evaporated C60 semiconductor. We have demonstrated that the contact resistance is on the one hand governed by the morphology of the SCO at the electrodes and on the other hand independent of the metal work function. In addition, we have observed that transistors electrical stability of is strongly impacted by the source and drain contact nature. The optimization of photolithography transistors, which essentially consisted of modifying the interfaces, allowed us to develop efficient n-type transistors with saturated field effect mobilities of up to 1.5 cm2/V.s for a maximal process temperature of 115 °C. The technological transfer to inkjet printed transistors was then performed. We then demonstrated that gate electrode and insulator morphologies deposited by inkjet printing, have a negligible impact on transistors performances. For our printed structure, charges injection at the S/D electrodes is in fact the key factor for high performance transistors realization. Finally, red phosphorescent materials based on molybdenum octahedral metal cluster have been developed. The resulting hybrid copolymer showed photoluminescence quantum yield up to 51%. The realization of the HLED was then carried out by combining a commercial blue LED and the copolymer doped with octahedral molybdenum clusters for possible applications in biology or lighting
Ndiaye, Ndèye Saly. "Modélisation des phénomènes de piégeage/dépiégeage dans les semi-conducteurs organiques et développement d’un dispositif de caractérisation de pièges dans les transistors organiques." Thesis, Reims, 2019. http://www.theses.fr/2019REIMS035.
Повний текст джерелаThis thesis aims to study the reliability of organic transistors. The main limitation of organic transistors is their instability due to the presence of traps able to lower their electrical performances. Our work is about the modelling of trapping/detrapping processes in organic semiconductors and the implementation of a trap characterization experiment on organic transistors. Our model takes into account adapted energetic distributions of both free and trapped carriers in emission and capture processes. It was used on some trap determination measurements on organic semiconductors from the literature using the Deep Level Transient Spectroscopy (DLTS). Our results show that considering relevant DOS for the HOMO/LUMO and for the trap distribution is not only more relevant for organic semiconductors but also allows one to better fit the measures with less contributions. A new model is then proposed to describe defect states in organic semiconductors considering relevant distributions for both free and trapped carriers. Good agreement with experimental defect data is obtained by the DLTS technique. The second theme of our study is about the implementation of a trap characterization experiment on organic transistors. To do so, we studied bias stress effects on the electrical characteristics of our P3HT based transistors. The principal effect observed in our transistors is a shift of the threshold voltage with the bias stress. We found that three trap contributions are responsible of instabilities noticed in our tested transistor, they are confirmed by other authors in the literature. Hence the interest of our experiment in the study of organic transistors reliability
Ferlauto, Laura. "Correlation between structural and electrical properties of organic semiconducting materials." Thesis, Strasbourg, 2015. http://www.theses.fr/2015STRAF009/document.
Повний текст джерелаThis thesis presents multiple characterization techniques applied to various organic materials with the ultimate goal of unraveling their structure-properties relationship once encapsulated as active materials in OFETs devices. Particular care is then dedicated to the structural characterization methods (2D-GIXRD, XRR and XRD) both from classical laboratory source and from synchrotron radiation. Various organic materials, comprising p- and n-type small molecules and polymers deposited from solution or by vacuum sublimation are investigated. In particular, the study on OFETs based two functionalized perylene isomers differing only in the shape of the alkyl side-chians demonstrates how the branched and asymmetric nature of the chains can lead to an improvement of the electrical performance with a simple post-deposition thermal treatment, while the fabrication of ambipolar polymeric devices by means of Langmir-Schaefer technique highligts the importance of the deposition method on the arrangement of the material on the substrate surface. A more unusual approach, named in-situ and real-time structural investigation, is also presented to evaluate structural modifications in organic thin films undergoing a particular process. Specifically, the structural responce of pentacene thin films to the application of VSG and VSD to the OFET and of TTF derivatives thin films to the variation of humidty were investigated
Queste, Mathieu. "Synthèse de semi-conducteurs de type pérylène pour application en électronique organique." Reims, 2010. http://theses.univ-reims.fr/sciences/2010REIMS024.pdf.
Повний текст джерелаThis study focuses on organic semiconductors based on perylene derivatives for electronic applications, especially in the fabrication of organic field effect transistors (OFETs). The main objective is the synthesis of perylene based molecules, taking advantage of its specificities, and their electrical characterization through the realization of test transistors. First, various perylene derivative architectures were achieved by direct reaction from the tetracarboxylic dianhydride acid pérylène or with by direct functionalization of the core. Then, using electrochemical technics, we determined the energy levels of our molecules. The knowledge of these levels is essential for therealization of high performance transistors. Finally, test transistors were fabricated using some perylene based semiconductors, and their output current/voltage characteristics were measured in order to evaluate the molecule electrical dehavior
Bejenaru, Nela. "Polymérisation des alcynes par métathèse : application à la réalisation de transistors organiques à film mince." Thesis, Lille 1, 2009. http://www.theses.fr/2009LIL10124.
Повний текст джерелаThis work is dedicated to the alkyne metathesis polymerization for the realization of organic field effect transistors (OTFT). We have been first interested in the synthesis of differently substituted aryleneethynylene materials (PAE, OAE) using the metathesis reaction. We next tested the potentialities of these materials in terms of electronic properties (condyctivity and charge transport), as a function of the structure diversity and chain lengths of the polymers. Among those, the 1,4-di (propynyl) benzene M2 monomer and its oligomerization product P2 (DPn = 4) have shown a p type semiconductor behaviour (conductivity of ca 10-7 S/cm). Organic field effect transistors based on these materials (M2 and P2) exhibited field effect mobilities of around 10-5cm2/V.s. P2 OTFT mobilitie enhancements were obtained , either via functionalization of the substrate with Self Assembled Monolayers of perfluorodecyltrichlorosilane (µ= 10-4 cm2/V.s), or via the control of the substrate temperature at 40°C during deposition (µ = 10-3cm2/V.s). The last part of this thesis is devoted to the polymerization reaction of terminal alkynes (hept-1-yne and propyne) on catalysts grafted onto the substrates. Although the polymerization reaction has been revealed to be incomplete by XPS studies, local chain growths were observed on micrometer domains using AFM and MEB spectroscopies, which validates the concept of grafting the catalyst on the transistor base. No field effect was observed, but conductivities between 10-3 and 10-6 S/cm were found, as a probe for the semiconductivity character of the organic layer
Joly, Damien. "Nouveaux dérivés organophosphorés pi-conjugués pour l'électronique organique." Rennes 1, 2010. http://www.theses.fr/2010REN1S128.
Повний текст джерелаIn order to extend application possibilities of organophosphorus compounds, new derivatives incorporating one or several phospole cycle were synthesized and their physical properties were investigated. In the first chapter, these molecules were used as orange emitters for white organic light emitting diodes through doping of a blue matrix. In the second chapter, mixed thiophenes/phospholes oligomers have been used as potential donor materials towards C60 for organic photovoltaic cells. Emphasis was given on the impact of inserting phosphole units into linear oligothiophènes and how connecting those with a phosphorus-phosphorus bond change their physical properties. Last chapter is about the study of star-shape phospholes such as 1,2,3,4,5-pentaphenylphosphole substituted with aliphatic chains for potential organic field effect transistors applications. Cyclisation of such compound was also studied in order to synthesize carbone sheets containing a phosphorus atom
Roche, Gilles. "Synthèse d’inhibiteurs de la protéase NS3-NS4A du VHC.Matériaux organiques et hybrides auto-organisés pour les transistors à effet de champ." Thesis, Montpellier, Ecole nationale supérieure de chimie, 2017. http://www.theses.fr/2017ENCM0007.
Повний текст джерелаThe different works presented in this manuscript relate the most relevant investigations representing my career evolution along this last eleven years. First, we show how it is possible to explore new active molecules by developing innovating non-natural amino-acids. This investigation was supported by the docking software GenMol. We show here the structures evolution of the produced molecules according to desired properties and to last advances in the field. The enantio convergent synthesis supported by peptide chemistry allowed us to reach five final molecules with diverse antiviral potentials. Then, synthesis and structural investigation of the compound BHH-BTBT was broached. We describe here physicochemical properties of the packing and how they affect charge transport properties. So then, we achieved OFET with good performance that show interesting perspective for future sensors. Finally we reported the first integration of a semi-conducting material (BTBT) in a hybrid organo-silica material. This approach involved the conception of an informed sol-gel bis(triethoxysilane) precursor that allowed us to control the π-conjugated cores organisation during the creation of the material. With detailed spectroscopic monitoring we demonstrated a J-aggregation during the thin film formation and a reorganisation to a H-aggregation during the sol-gel process. After optimisation of the semiconductor/electrode interface, we obtained hybrid organo-silica field effect transistors entirely reticulated showing a high resilience to a large diversity of organic solvent
Kondratenko, Kirill. "Structural and charge transporting properties of pure liquid crystalline organic semiconductors and composites for applications in organic electronics." Thesis, Littoral, 2019. http://www.theses.fr/2019DUNK0536.
Повний текст джерелаThis thesis is dedicated to various aspects of liquid crystalline (LC) organic semiconductors (OSCs) in regard to their applications in the field of organic electronics. The first part of this work deals with a well-known LC OSC based on phenyl-naphtalene. Two major ways of performance improvement are proposed and investigated : stabilization of LC structure by in situ photo-polymerization and introduction of electron acceptor doping impurity. In the first case, the influence of polymer network on mesophase order and charge transport is investigated by conventional experimental techniques and Time-Of-Flight (TOF) mobility measurements. Fot the doped materials, ab initio calculations are employed to predict their spectroscopic properties which is exhaustively compared with the experimental data obtained by optical and vibrational spectroscopy. The charge transport is studied by TOF method in the mesophase, while crystalline phase is investigated via conductive atomic force microscopy. A prototype of organic field effect transistor (OFET) is prepared to obtain an estimate of performance for a relevant real-world application. The second part of this work includes design and synthesis of a novel LC semiconductor based on anthracene, additional attention is made to obtain an easy-to-make and low production cost material. Noval molecule is fully characterized : molecular structure is confirmed by relevant techniques ; frontier molecular energy levels are studied by optical spectroscopy and cyclic voltammetry and confronted to values obtaines via ab initio calculations ; mesophase properties are investigated by optical microscopy and scanning calorimetry. charge transporting properties are characterized by means of an OFET device : it is found that new anthracene-molecule exhibits significant improvement of field-effect hole mobility over previously studied phenyl naphtalene derivative. Finally, photoconductive properties of the novel material are addressed in order to investigate its potential applications to organic phototransistors
Kim, Hyeok. "Improving charge injection in organic field-effect transistors by surface modification of source and drain electrodes." Sorbonne Paris Cité, 2015. http://www.theses.fr/2015USPCC089.
Повний текст джерелаA prospect of flexible electronics lines with the development of high performance organic field effect transistors (OFETs) that enables cost-effective and large-area electronic devices such as flexible displays, smart cards and sensors. In order to improve the electrical performance of OFETs, a crucial issue concerning charge injection at the interface of electrode/organic semiconductor is recently rising. The dissertation is dedicated to investigate charge injection via the modification of electrodes with self assembled monolayers (SAMs) based on biphenyl backbone bearing extremely lower resistance to its counterpart with aikyl chain and its application to organic electronic devices. Functionalized SAMs with fluorine at the end group plays a substantial role to improve charge injection through a dipolar effect to decrease barrier height at the electrode/semiconductor interface and a better morphology of organic semiconductor both in a planar diode and OFETs. Morphological characterization on SAMs to determine the orientation of the molecules renders an effective application of SAMs to elaborate highly improved electronic devices. Augmented charge injection through the introduction of fluorinated biphenyl thiol (FBPS) leads largely enhanced current density and clear observation of space-charge limited current (SCLC) as compared to the cases of biphenyl thiol (BPS) and bare Au in planar diodes. This is extended to significant enhancement of electrical performance such as field effect mobility and contact resistance in OFET. Moreover, improved charge injection through the modification of electrodes with functionalized SAMs is also exhibited by the intervention of silane anchoring group to the SAMs in planar diodes
Lee, Yongjeong. "Gaussian density of states driven numerical modeling of organic field-effect transistors." Thesis, Institut polytechnique de Paris, 2020. http://www.theses.fr/2020IPPAX043.
Повний текст джерелаAlthough the device physics of organic field-effect transistors (OFETs) has been widely studied, the analysis with energetic distribution of the density-of-states (DOS) is still lacking in spite of the disordered nature of organic semiconductors. Because charge transport and injection take place at the Gaussian DOS, this distinctive energetic structure of organic semiconductors could make the charge-accumulation process, and hence the device operation, different. This thesis is dedicated to understanding the effect of Gaussian DOS on device parameters of OFETs, the threshold voltage, charge-carrier mobility and injection barrier via numerical finite-element based 2D simulations and experimental validation. The threshold voltage is comprehended by the charge trapping into the secondary Gaussian trap DOS as well as the intrinsic Gaussian DOS. We show that the overlap of two Gaussian DOSs due to the disorder induces specific threshold behaviors of OFETs. Second, the hopping transport is studied via Gaussian disordered model (GDM) on random spatial sites of organic semiconductors. This model can offer a precise result over GDM with cubic lattice. Also, we propose a correct parametrization of the model for wide range of materials from polymers to small molecules. Lastly, charge-based and transport-based injection barrier are studied and compared with Gaussian DOS. The advantages and limits of each model are evaluated
Ouattara, Mariane. "Polymères amphiphiles : des films Langmuir-Blodgett au transistor." Doctoral thesis, Université Laval, 2016. http://hdl.handle.net/20.500.11794/26569.
Повний текст джерелаOver the past 25 years, interest in the use of organic semiconductors as active layers in field effect transistors (TFTs) instead of silicon has grown dramatically. The use of π-conjugated polymers in this area has greatly driven this growth. Over time, there has been an improvement in performance achieved contributing to the emergence of new materials. However, the performances of organic semiconductors remains inferior that of their inorganic counterpart regarding parameters such as the mobility and stability. Better results could be achieved if the charge transport was done without hindrance. Thus, a very good organiza- tion within the material is needed. In this regard, amphiphilic polymers based on thieno [3,4-c] pyrrole-4,6-dione (TPD) units were synthesized. By using the Langmuir-Blodgett technique (LB) to optimize the organization of the molecules within the films, it was possible to achieve stable films with a collapse pressure of 60 mN/m. Brewster angle (BAM) and atomic force (AFM) microscopies have demonstrated that homogeneous films are obtained at the air-water interface (BAM) and remain so once transferred onto a solid substrate (AFM). Orientation has been studied mainly by attenuated total reflection infrared spectroscopy (ATR). Other spectroscopic techniques such as UV-visible, absorption polarization modulation infrared reflection spectroscopy (PM-IRRAS) and ellipsometry have confirmed the ATR results. Measurements show that molecules adopted an edge-on orientation in the polymer films. To complete this project, organic transistors were fabricated. Interesting mobility values of 1.2 × 10-3 cm2/(V.s) were recorded for organic LB film transistors.
Darchy, Léa. "Nanotubes de carbones semi-conducteurs pour cellules solaires organiques." Phd thesis, Ecole Polytechnique X, 2013. http://pastel.archives-ouvertes.fr/pastel-00919656.
Повний текст джерелаEl, Amrani Aumeur. "Etude des comportements statique et dynamique de dispositifs photo-transistor et photocoupleur organiques." Limoges, 2008. https://aurore.unilim.fr/theses/nxfile/default/253e8c99-e136-4f0c-8903-43820b4fc071/blobholder:0/2008LIMO4021.pdf.
Повний текст джерелаThis work concerns the elaboration and the characterization of organic phototransistor devices. A first study on the realization of conducting transparent oxides obtained by Ion Beam Sputtering enabled us to evaluate and to validate the quality of an ITO/ZnO bilayer electrode for insertion in organic optoelectronic components. A second study was carried on the effect of UV-visible light on the electric properties of organic transistors (OTFT) based on pentacene and with PMMA as dielectric : under UV illumination (at 365nm), we obtained a photocurrent gain of 2. 103 at Vgs=OV and a maximum sensibility of about 1,5. 10-1 A/W associated with fast enough response times in order to envisage practical applications for organic optoelectronics. Finally, we realized new organic photocoupler type optoelectronic structures made up of an OLED (emission at 550nm) and an OTFT; for this last study, we note a high sensibility and a high transfer static rate of about 20A/V and 2,5. 10-1 respectively but high response times of about the second
Panozzo, Sophie. "Etude des propriétés électroniques de nouveaux composés organiques électroluminescents." Phd thesis, Université Joseph Fourier (Grenoble), 2003. http://tel.archives-ouvertes.fr/tel-00005968.
Повний текст джерелаBoudreault, Pierre-Luc. "Synthèse et caractérisation de nouveaux semi-conducteurs organiques à base de carbazole et d'indolo[3,2-b]carbazole." Doctoral thesis, Université Laval, 2010. http://hdl.handle.net/20.500.11794/22285.
Повний текст джерелаGaitis, Alexandre. "Etude et développement de diélectriques avancés pour des transistors imprimés low-voltage." Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAT032.
Повний текст джерелаThis thesis discusses the study of high permittivity dielectrics and their implementation in the organics transistors structure in order to reduce their operating voltage while maintaining their compatibility with solution/ printing processes.The first part of this work focusses on the theory of organic semiconductors and transistors. It will also discuss the various approaches proposed in the literature to reduce operating voltage in such devices.It will then discuss the study of the dielectric properties of materials derived from the PVDF (polyvinylidene fluoride). The evolution of the relaxor-ferroelectric behavior exhibited by these polymers will be monitored versus the chemical composition, frequency, bias and temperature.After an in-depth characterization of the high-k dielectric in a capacitor structure, we will evaluate its impact on the transistors characteristic and compare the performance of this new devices to a reference transistor. These observation will be compared to the study of the dielectric in Chapter 2 in order to gain insight on the physical origin of these new behavior.Finally, we will study and compare the reliability of the low-voltage and reference transistor with the help of electrical stress
Blouin, Nicolas. "Conception, synthèse et caractérisation de poly(2,7-carbazole)s et poly(indolo[3,2-B]carbazole)s pour des applications en électronique organique." Thesis, Université Laval, 2008. http://www.theses.ulaval.ca/2008/25870/25870.pdf.
Повний текст джерелаInscrit au Tableau d'honneur de la Faculté des études supérieures
Pagoaga, Bernard. "Synthèse de nouveaux matériaux semi-conducteurs dérivés du pérylène pour l'électronique organique." Thesis, Reims, 2012. http://www.theses.fr/2012REIMS020/document.
Повний текст джерелаThis study deals with the synthesis of perylene-3,4:9,10-tetracarboxylic acid bisimide derivatives and their use as semi-conductors for organic electronics, and more specifically for the realization of organic field-effect transistors. The goals of this study are the synthesis of perylene derivatives, using halogenation reactions or Suzuki-Miyaura coupling, and the fabrication of organic field-effect transistors.In the first part of the work, a wide variety of perylene derivatives has been obtained and fully characterized. Spectroscopic and electrochemical studies have been performed to determine energy levels of the frontier orbitals.In the second part, the making of organic field-effect transistors was realized, beginning with the research of optimal conditions for ink formulation, deposition and annealing of the film. Then those devices have been characterized by measuring the source-drain current.Keywords: semi-conductor, perylene, organic field-effect transistor, Suzuki-Miyaura coupling, ink jet printing
Kim, Chang Hyun. "APPROCHE PHYSIQUE DE LA MODÉLISATION COMPACTE POUR LES COMPOSANTS ÉLECTRONIQUES ORGANIQUES." Phd thesis, Ecole Polytechnique X, 2013. http://pastel.archives-ouvertes.fr/pastel-00844519.
Повний текст джерелаIbraikulov, Olzhas. "Bulk heterojunction solar cells based on low band-gap copolymers and soluble fullerene derivatives." Thesis, Strasbourg, 2016. http://www.theses.fr/2016STRAD046/document.
Повний текст джерелаThe chemical structure of organic semiconductors that are utilized in bulk heterojunction photovoltaic cells may strongly influence the final device performances. Thus, better understanding the structure-property relationships still remains a major task towards high efficiency. Within this framework, this thesis reports in-depth material investigations including charge transport, morphology and photovoltaic studies on various novel low band-gap copolymers. First, the impact of alkyl side chains on the opto-electronic and morphological properties has been studied on a series of polymers. Detailed charge transport investigations showed that a planar conjugated polymer backbone leads to a weak dependence of the charge carrier mobility on the carrier concentration. This observation points out that the intra-molecular torsion angle contributes significantly to the electronic energy disorder. Solar cells using another novel copolymer based on pyridal[2,1,3]thiadiazole acceptor unit have been studied in detail next. Despite the almost ideal frontier molecular orbital energy levels, this copolymer did not perform in solar cells as good as expected. A combined investigation of the thin film microstructure and transport properties showed that the polymers self-assemble into a lamellar structure with polymer chains being oriented preferentially “edge-on”, thus hindering the out-of-plane hole transport and leading to poor charge extraction. Finally, the impact of fluorine atoms in fluorinated polymers on the opto-electronic and photovoltaic properties has been investigated. In this case, the presence of both flat-lying and standing lamellae enabled efficient charge transport in all three directions. As a consequence, good charge extraction was possible and allowed us to achieve a maximum power conversion efficiency of 9.8%
El, Gemayel Mirella. "Graphene based supramolecular architectures and devices." Phd thesis, Université de Strasbourg, 2014. http://tel.archives-ouvertes.fr/tel-01070648.
Повний текст джерелаLienerth, Peter. "Elaboration and characterization of field-effect transistors based on organic molecular wires for chemical sensing applications." Thesis, Strasbourg, 2014. http://www.theses.fr/2014STRAD003/document.
Повний текст джерелаThe molecular structure of organic semiconductors which can be tailored by the chemical synthesis influences the sensitivity and selectivity of gas sensor devices. To improve the understanding of the ongoing mechanisms in sensors based on organic field effect transistors (OFETs) this thesis follows three different tracks: The applicability of the hysteresis of the transfer characteristics as a gas sensing parameter is studied. As a complement to the standard transistor parameters the hysteresis improves the selectivity of poly(3-hexylthiophen-2,5-diyl) based OFETs to polar gases. Transient current measurements indicate the additional dependence on the detrapping kinetics as origin of the increased selectivity. To understand the influence of the molecular structure on the gas sensing behavior, polymers with alkoxy side chains, varying in polarity and steric hindrance, are used as gas sensing layer for ethanol vapor. The response strength correlates with the amount of absorbed analyte and the dipole moment of the side chains. To enable investigations of the mechanisms at the nanoscale, one part of this work focuses on the preparation of transistors with a reduced channel length. By using silicon nitride as dielectric layer, driving voltages decreased and interface properties could be improved
Wang, Dengjun. "Optimization of a biosensor based on an electrolytic gated organic field-effect transistor (EGOFET) for Bisphenol A detection." Sorbonne Paris Cité, 2016. http://www.theses.fr/2016USPCC089.
Повний текст джерелаIn the last few decades, due to their potential usefulness in clinical diagnosis, food safety, public security and environment survey, biosensors have been intensively investigated. This work mainly focused on the design and fabrication of new kind of biosensor based on electrolytic gated organic field-effect transistor (EGOFET). This method can measure low concentration of bisphenol A in water with an EGOFET based on poly(2,5-bis(3-tetradecylthiophen-2- ypthieno[3,2-b]thiophene) (pBTTT) co-crystalized with alkyl-modified bisphenol A as organic semi-conductor. By combination with an antibody, this biosensor was able to detect bisphenol A directly with a limit of detection lower than 10-11 mol. L 1. We observed a decrease of the output current upon affinity coupling of the antibody and an opposite increase of the output current upon bisphenol-A addition, due to the competitive dissociation of the antibody from the surface of the semiconductor. The presented sensing strategy could be readily adapted to other small organic molecules of interest and could be a promising tool for simple, low-cost, portable and easy-to-use biosensor
Fall, Sadiara. "Etude du transport de charges dans les polymères semi-conducteurs à faible bande interdite et de son impact sur les performances photovoltaïques." Phd thesis, Université de Strasbourg, 2013. http://tel.archives-ouvertes.fr/tel-00975750.
Повний текст джерелаHaddad, Clara. "Fabrication, caractérisation électrique et fiabilité des OTFTs imprimés sur substrat plastique." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT116/document.
Повний текст джерелаThis thesis project is about the study of stability and reliability of organic transistors printed at CEA-Liten. P-Type OTFTs were manufactured on plastic substrate, with a p-type polymer semiconductor (SP400 from Merck) and a fluoropolymer as dielectric. First, an experimental protocol for electrical characterization was determined in order to overcome potential effects due to environment, measurements or aging of OTFTs. Then a model based on the expression of the accumulation charge in the transistor was developed. This model allowed the OTFT parameters’ extraction during low temperature measurements, which showed a temperature-activated charges transport in the OSC. Finally, the impact of negative gate bias stress on OTFTs’ characteristics was studied. The electrical stability of the P-OTFTs was measured on several stacks to study the influence of the dielectric material or its deposition method and the influence of the gate (printed silver ink or sputtered gold electrode)
Iazykov, Maksym. "Growth of pentacene on parylene and on BCB for organic transistors application, and DNA-based nanostructures studied by Amplitude : Modulation Atomic Force Microscopy in air and in liquids." Phd thesis, Ecole Centrale de Lyon, 2011. http://tel.archives-ouvertes.fr/tel-00669475.
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