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Статті в журналах з теми "Transistors organiques ? effet de champ"
Horowitz, G., and P. Delannoy. "Transistors à effet de champ à base d’oligomères organiques conjugués. Réalisation, modélisation et comparaison avec les semiconducteurs inorganiques." Journal de Chimie Physique 89 (1992): 1037–44. http://dx.doi.org/10.1051/jcp/1992891037.
Повний текст джерела-JAFFREZIC-RENAULT, N. "Les biocapteurs à base de transistors à effet de champ." Revue de l'Electricité et de l'Electronique -, no. 06 (2000): 78. http://dx.doi.org/10.3845/ree.2000.061.
Повний текст джерелаDambrine, Gilles, and Alain Cappy. "Détermination rapide et précise du schéma équivalent “petit signal” des transistors à effet de champ." Annals of Telecommunications 43, no. 5-6 (May 1988): 274–81. http://dx.doi.org/10.1007/bf02995088.
Повний текст джерелаFaye, S., J. P. Praseuth, and A. Scavennec. "Caractéristiques électriques des barrières métal/AlInAs/GaInAs pour transistors à effet de champ AlInAs/GaInAs/InP." Journal de Physique III 1, no. 7 (July 1991): 1289–300. http://dx.doi.org/10.1051/jp3:1991189.
Повний текст джерелаSOULIER, C., V. BOITEUX, P. CANDIDO, E. CAUPOS, M. CHACHIGNON, G. COUTURIER, X. DAUCHY, et al. "La spectrométrie de masse haute résolution pour la recherche de micropolluants organiques dans l’environnement." Techniques Sciences Méthodes 6, no. 6 (June 21, 2021): 43–54. http://dx.doi.org/10.36904/tsm/202106043.
Повний текст джерелаGuérineau, D., L. Fache, C. Aupetit-Berthelemot, and P. Medrel. "Développement d’un traceur de caractéristiques de quadripôles et son utilisation en séance de travaux pratiques." J3eA 18 (2019): 1024. http://dx.doi.org/10.1051/j3ea/20191024.
Повний текст джерелаde Jaeger, J. C., F. Temcamani, M. Lefebvre, R. Kozlowski, P. Fellon, J. Pribetich, and Y. Crosnier. "Etude comparative du claquage dans les transistors à effet de champ de puissance MESFET, TEGFET et MISFET." Revue de Physique Appliquée 23, no. 7 (1988): 1205–13. http://dx.doi.org/10.1051/rphysap:019880023070120500.
Повний текст джерелаMottet, S., J. M. Dumas, J. E. Viallet, A. Belhadj, and P. Audren. "Etude des effets parasites affectant le fonctionnement des transistors à effet de champ à gaz d'électrons bidimensionnel." Revue de Physique Appliquée 24, no. 6 (1989): 649–58. http://dx.doi.org/10.1051/rphysap:01989002406064900.
Повний текст джерелаReuter, V., T. Gailard, E. Praet, and J. L. Vasel. "Potentialités des bioélectrodes et des bioréacteurs à biomasse fixée pour l'estimation rapide de la DBO." Revue des sciences de l'eau 9, no. 4 (April 12, 2005): 435–55. http://dx.doi.org/10.7202/705261ar.
Повний текст джерелаPeng, XZ, G. Horowitz, and F. Garnier. "Influence de la nature de l’isolant sur les performances des transistors à effet de champ à base de sexithiényle alpha-conjugué." Journal de Chimie Physique 89 (1992): 1085–90. http://dx.doi.org/10.1051/jcp/1992891085.
Повний текст джерелаДисертації з теми "Transistors organiques ? effet de champ"
Peltier, Jean-David. "Isomères de position d’indacénodithiophènes : synthèse, propriétés et applications en transistors organiques à effet de champ." Thesis, Rennes 1, 2017. http://www.theses.fr/2017REN1S138/document.
Повний текст джерелаOrganic Field Effect Transistors (OFETs), in which the charge transport is carried through a thin film made of organic molecules represent a transformation of the FET technology regarding that based on Silicon. They offer in particular the possibility to manufacture low cost flexible electronics. This work is focused on the synthesis, the study and the use as active layer in n-type OFETs of novel, electron poor, couples of para- and meta-indacenodithiophenes isomers (para- and meta-IDT). First of all, an introduction to the field of n-type OFETs is presented, followed by the presentation of the synthesis of the IDT derivatives and the comparative analysis of their properties. Finally, the fabrication of the OFETs, their characterization and the optimization of their architecture is described. The performances recorded attest that these derivatives are of great interest for the n-type OFETs. Different 3π-2spiro IDT derivatives are also presented in order to study the IDTs intrinsic properties and to envisage their incorporation as host in phosphorescent organic light-emitting diodes
Kuai, Wenlin. "Faisabilité de transistors organiques à effet de champ fabriqués entièrement en solution." Thesis, Rennes 1, 2017. http://www.theses.fr/2017REN1S013/document.
Повний текст джерелаPresent work deals with the new trend to get highly flexible electronics by using fully Organic Thin-Film Transistor (OTFT) as the basic element of this electronics. Fully organic n-type as well as p-type OTFT processed by inkjet printing are studied. Printing parameters of each ink, jettability, wetting, printability, and patterns optimization, leading to the deposition of conductive contacts, gate insulator and semiconducting active layer are studied. Process of n-type OTFT based on C60 is shown as unreliable, mainly due to the poor solubility of C60 in organic solvent. In the contrary, p-type OTFTs based on Tips-pentacene are much more reliable. The work is a large overview of the issues and the difficulties that have been to jump and to solve in the way to fabricate fully printed organic transistors. Some solutions have been given and new ideas have been proposed
Houin, Geoffroy. "Développement d’amplificateurs sur substrats flexibles à partir de transistors organiques à effet de champ." Thesis, Bordeaux, 2017. http://www.theses.fr/2017BORD0588/document.
Повний текст джерелаOrganic field effect transistors (OFETs) have huge potential in the applications of future electronics, such as flexible circuits and displays or medical application. However, stability and performances of OFETs need to be improved, so as to reach the real market applications.First objective of this work is to realize air stable OFETs with state of the art performance. To that end, several approaches have been applied with special focus on process simplification. Small molecule, dinaphtho[2,3-b:2',3‘-f]thieno[3,2-b]thiophene (DNTT) has been chosen as the active layer for all devices studies. Metal electrodes in combination with oxide interfacial layers were investigated to decrease the contact resistance, which not only affects eventual mobility that can be achieved but also complicates circuit design. A systematic study was carried out to fabricate high capacitance dielectric layer and passivating the surface with proper interfacial layers. These approaches allowed to obtain high performance OFET on plastic substrate with high mobility (2.4cm2.V-1.s-1), high current on/off ratio (> 106), low threshold voltage and no hysteresis As the second objective, OFET devices were simulated using GoldenGate (with Cadence Virtuoso® environment) to derive relevant parameters, which helped to design amplifier circuit. Finally, passive component (resistance) has been developed and final circuit was realized and characterized
Macabies, Romain. "Proprietes et stabilite de l’interface isolant-pentacene dans les transistors organiques a effet de champ." Thesis, Saint-Etienne, EMSE, 2011. http://www.theses.fr/2011EMSE0628/document.
Повний текст джерелаThese recent years, Organic Field-Effect Transistor (OFET) development has significantly improved it performances and it stability. This was made possible, through a better understanding of the mechanisms governing charge transport in these devices. However, some phenomena remain unclear, in particular, at the interface between the semiconductor and the dielectric. Charge carrier trapping which is one of the main causes of charge transport disturbance in organic transistors, is one of them. So, this work aims to investigate such phenomena in pentacene-based transistors.Polar groups and particularly, hydroxyl groups, located at the insulator-semiconductor interface, are the main sources of charge carriers trapping in OFET. To prevent their presence, an OFET fabrication technology based on a passivating dielectric, poor of hydroxyl groups, calcium fluoride-based interfacial layer has been developed. Effect of this layer on pentacene-based transistors operation has been studied, as well as these devices aging under different storage atmosphere (in vacuum and in air) and under electrical stress.Thus, it has been highlighted that an interfacial layer of calcium fluoride with a too high thickness (around 5 nm) changes pentacene layer morphology which results in a quasi-disappearance of charge transport in pentacene in OFET configuration. Aging studies showed that under the effect of CaF2 interfacial layer, even with a very thin thickness (a few nanometers), a greater quantity of moisture is induced in pentacene layer probably due to the hygroscopic nature of calcium fluoride
Hafsi, Bilel. "Réalisation, caractérisation et simulation de composants organiques : transistors à effet de champ et mémoires." Thesis, Lille 1, 2016. http://www.theses.fr/2016LIL10055/document.
Повний текст джерелаThe subject of this thesis adopt an original approach to realize new components (transistor, volatile and non-volatiles memory) based on N type organic semiconductor “PolyeraTM N2200”. First, we have fabricated and optimized organic field effect transistors by modifying some technological parameters related to fabrication. Then, we have analyzed their electrical properties with the help of two-dimensional drift-diffusion simulator using ISE-TCAD®. We studied the fixed surface charges and the effect of the organic semiconductor/oxide interface traps. The dependence of the threshold voltage on the density and energy level of the trap states has been also considered. , by incorporating gold nanoparticles in these devices, we have developed a new device called “NOMFETs” (nanoparticles organic memory field effect transistors), which mimic the behavior of biological synapse by reproducing a facilitating and a depressing drain current with a relative amplitude of about 50% and a dynamic response of about 4s. Studying the charging/discharging dynamics, we demonstrated a typical anti-Hebbien learning function, one of the fundamental mechanisms of the unsupervised learning in biological neural networks. Finally, we developed nonvolatile “FLASH” memory devices, by combining metallic gold nanoparticles and reduced graphene oxide (rGO) monolayer flakes. This double floating gate architecture provided us a good charge trapping ability which include a wide memory window (~68V), a long extrapolated retention time (> 108 s) and strong endurance properties (1000 write/erase cycles)
Devynck, Mélanie. "Transistors à effet de champ : étude des interfaces et amélioration des performances." Thesis, Bordeaux 1, 2012. http://www.theses.fr/2012BOR14569/document.
Повний текст джерелаThe charge transport and injection are strongly dependant of the semiconductor/dielectric and semi-conductor/electrode interfaces quality. Therefore, this studyfocuses on these interfaces in organic field effect transistors (OFETs). The goal is theunderstanding of the relation between the dielectric (roughness, surface energy) or electrode(work function) characteristics and the OFETs performances.First, we investigate the influence of the interfaces modification by SAMs (SelfAssembled Monolayers) in pentacene based OFETs on silicon substrates. Due to the SAMsgrafting such as OTS8 or OTS, the hydroxyls groups are neutralized and the dielectric showsan apolar surface leading to the reduction of the charge traps density. Moreover, a 2Dpentacene growth with large grains on OTS surface contributes to the decrease of the chargetraps density in the bulk. The threshold voltage, subthreshold swing and hysteresis decreasesgive rise to these modifications. The improvement of the charge transport allows us to reachmobility up to 0.6 cm2/Vs.Then, we investigate the electrode surface treatment by fluorinated SAMs such asPFBT, PFHT or PFDT. The better pentacene layer continuity and the increased electrodework function emphasize the morphologic and electronic influences of the SAMs. Thesemodifications lead to the contact resistance reducing and in consequence to an enhancedmobility up to 0.6 cm2/Vs. Finally, devices with a combination of the interfaces treatmentpresent high mean mobility of 1.3 cm2/Vs.On the final part of this study, we concentrate on low voltage C60 or pentacene basedOFETs on glass substrates. Using a dielectric composed of a high-k dielectric as AlOx and athin layer of a low-k dielectric such as phosphonic SAMs (C8-PA or C18-PA) or polymers(PMMA or PVT) allow us to achieve this low voltage condition. The mobility obtained withn-type OFETs (m = 0.4 cm2/Vs) and the small hysteresis (<0.1 V) in p-type OFETs arepromising
Morvan, Marjorie. "Etude des transistors à effet de champ organiques : réalisation d'OFETs ambipolaires et étude des mécanismes d'injection dans les OFETs verticaux." Thesis, Toulouse 3, 2020. http://www.theses.fr/2020TOU30175.
Повний текст джерелаOrganic Field Effect Transistors (OFETs) is increasingly attractive thanks to the possibility of producing lighter components at lower cost and on flexible substrates. Being able to couple a light emission function to a transistor function makes its use more interesting. This is the case with display applications, where the pixels are produced by an active matrix technology of organic light-emitting diodes (AMOLED). Having a light-emitting OFET makes possible to combine an OFET with an organic light-emitting diode (OLED) and thus simplifying the design, the manufacturing steps as well as increasing the lifetime of pixels. During this thesis, the study and manufacture of light-emitting OFETs were carried out using two approaches. The first one is based on the study of ambipolar OFETs based on N, N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13), an n-type semiconductor, and pentacene, a p-type semiconductor. This study constitutes the first step in obtaining electroluminescent OFETs. The fabrication and characterization of these ambipolar OFETs were performed for the first time in the laboratory's research team. A study of their structure was carried out to find the ideal parameters to obtain a balanced charge transport. The optimized structure is a bilayer structure with a pentacene thickness of 8 nm and a PTCDI-C13 thickness of 20 nm. The addition of an emitting layer between the two semiconductors failed to achieve light emission due to excessive charges trapping. However, this study has opened up new perspectives for future work on ambipolar OFETs. The second approach to study light-emitting OFETs is more innovative thanks to the change of the structure from a classic planar structure to a vertical one. This structure has the advantage of being able to easily integrate an OLED structure and has a homogeneous light emission over a large area. The operating principle is totally different from conventional OFETs: here, the current modulation is no longer done by controlling the conductivity in a semiconductor channel, but by controlling the injection of charges at the source electrode. The study of this structure made it possible to obtain luminous organic transistors. Then, the study of charge injection mechanisms allowed us to understand more deeply the operating principe of these transistors. Several materials have been tested as the source electrode: gold, silver, aluminum and ITO (Indium Tin Oxide). This study allowed us to determine the injection mechanism involved, namely the injection of charges by the modulation of the tunnel effect thanks to the band bending induced by the gate effect in the semiconductor layer close to the interface. It has also been identified that the quality of the source electrode/semiconductor interface plays a major role since poor interface quality leads to a drastic decrease in performance
Macabies, Romain. "Proprietes et stabilite de l'interface isolant-pentacene dans les transistors organiques a effet de champ." Phd thesis, Ecole Nationale Supérieure des Mines de Saint-Etienne, 2011. http://tel.archives-ouvertes.fr/tel-00740173.
Повний текст джерелаBraga, Daniele. "Charge transport properties of organic semiconductors : application to field effect transistors." Paris 7, 2009. http://www.theses.fr/2009PA077157.
Повний текст джерелаIn order to go deeper in the knowledge of the fundamentals of Organic Field Effect Transistors (OFETs), we have characterized different typologies of OFETs using rubrene single crystals. The latter are highly ordered organic semiconductors with which high mobility transistors can be fabricated. First we have obtained a detailed picture about the properties of a rubrene single crystal, by analyzing the current-voltage (I-V) characteristics of symmetric diodes with the Space Charge Limited Current (SCLC) theory. A low density of defects and a low density of intrinsic thermally generated carriers have been found to characterize this material. On this basis, we have analyzed metal-semiconductor-field-effect-transistors (MESFETs). These non-conventional devices have been proved to be efficient organic FETs, in which the process of charge carrier injection from the ohmic source contact is controlled by the voltage applied to a non-ohmic gate electrode. Finally, metal-insulator-semiconductor field effect ; transistors (MISFETs) have been considered. The (I-V) trend below the threshold voltage is not exponential, as predicted by the inorganic theory; instead, it is linear with the gate voltage and it follows a pseudo-exponential behaviour only in a narrow transition region. An alternative semi-analytical description has been provided here by taking into account the effect of a localized trap level on the distribution of free charges. The presence of this discrete trap level was highlighted by the previously conducted SCLC analysis
Leydecker, Tim. "Multiresponsive and supramolecular field-effect transistors." Thesis, Strasbourg, 2015. http://www.theses.fr/2015STRAF056/document.
Повний текст джерелаThis thesis explored how, by blending of materials with different electrical characteristics, it is possible to fabricate transistors with new or improved performances. First, organic field-effect transistors based on a single oligothiophene, DH4T, were fabricated and optimized until the measured mobility was superior to that observed in vacuum deposited films. This was achieved through careful tuning of the interfaces using self-assembled monolayers and by strong control of the solvent- evaporation rate. P-type polymers were blended with an n-type polymer. Each resulting solution was used for the fabrication of ambipolar field-effect transistors. These devices were characterized and it was found that for each pair of p- and n-type polymers, a transistor with balanced mobilities and high Ion/Ioff could be fabricated. Finally field-effect transistors based on a blend of P3HT and a photoswitchable diarylethene (DAE-Me) were fabricated. The current was measured during and between irradiations and it was demonstrated that a non-volatile multilevel memory could be fabricated
Книги з теми "Transistors organiques ? effet de champ"
Zhenan, Bao, and Locklin Jason John, eds. Organic field-effect transistors. Boca Raton: CRC Press, 2007.
Знайти повний текст джерелаGaN transistors for efficient power conversion: The eGaN FET journey continues. El Segundo, CA: Power Conversion Publications, 2012.
Знайти повний текст джерелаRF and microwave modeling and measurement techniques for compound field effect transistors. Raleigh, NC: SciTech Pub., 2009.
Знайти повний текст джерелаStrydom, Johan, John Glaser, Alex Lidow, Michael de Rooij, and David Reusch. GaN Transistors for Efficient Power Conversion. Wiley & Sons, Limited, John, 2019.
Знайти повний текст джерелаStrydom, Johan, Alex Lidow, Michael de Rooij, and David Reusch. GaN Transistors for Efficient Power Conversion. Wiley, 2014.
Знайти повний текст джерелаStrydom, Johan, Alex Lidow, Michael de Rooij, and David Reusch. GaN Transistors for Efficient Power Conversion. Wiley & Sons, Incorporated, John, 2014.
Знайти повний текст джерелаGaN Transistors for Efficient Power Conversion. Wiley & Sons, Limited, John, 2019.
Знайти повний текст джерелаStrydom, Johan, John Glaser, Alex Lidow, Michael de Rooij, and David Reusch. GaN Transistors for Efficient Power Conversion. Wiley & Sons, Incorporated, John, 2019.
Знайти повний текст джерелаStrydom, Johan, Alex Lidow, Michael de Rooij, and David Reusch. GaN Transistors for Efficient Power Conversion. Wiley & Sons, Limited, John, 2014.
Знайти повний текст джерелаSaha, Samar K. FinFET Devices for VLSI Circuits and Systems. Taylor & Francis Group, 2020.
Знайти повний текст джерела