Статті в журналах з теми "Topological insulator layer"
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Darabi, Amir, Manuel Collet, and Michael J. Leamy. "Experimental realization of a reconfigurable electroacoustic topological insulator." Proceedings of the National Academy of Sciences 117, no. 28 (June 29, 2020): 16138–42. http://dx.doi.org/10.1073/pnas.1920549117.
Повний текст джерелаDeng, Yujun, Yijun Yu, Meng Zhu Shi, Zhongxun Guo, Zihan Xu, Jing Wang, Xian Hui Chen, and Yuanbo Zhang. "Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi2Te4." Science 367, no. 6480 (January 23, 2020): 895–900. http://dx.doi.org/10.1126/science.aax8156.
Повний текст джерелаLei, Chao, Shu Chen, and Allan H. MacDonald. "Magnetized topological insulator multilayers." Proceedings of the National Academy of Sciences 117, no. 44 (October 19, 2020): 27224–30. http://dx.doi.org/10.1073/pnas.2014004117.
Повний текст джерелаChang, Kai-Wei, Wei Ji, and Chao-Cheng Kaun. "Layer-separable and gap-tunable topological insulators." Physical Chemistry Chemical Physics 19, no. 5 (2017): 3932–36. http://dx.doi.org/10.1039/c6cp06932k.
Повний текст джерелаJiang, Guobao, Yuan Zhou, Lulu Wang, and Ying Chen. "PMMA Sandwiched Bi2Te3 Layer as a Saturable Absorber in Mode-Locked Fiber Laser." Advances in Condensed Matter Physics 2018 (December 18, 2018): 1–5. http://dx.doi.org/10.1155/2018/7578050.
Повний текст джерелаLi, Jiaheng, Yang Li, Shiqiao Du, Zun Wang, Bing-Lin Gu, Shou-Cheng Zhang, Ke He, Wenhui Duan, and Yong Xu. "Intrinsic magnetic topological insulators in van der Waals layered MnBi2Te4-family materials." Science Advances 5, no. 6 (June 2019): eaaw5685. http://dx.doi.org/10.1126/sciadv.aaw5685.
Повний текст джерелаHu, Xiangting, Ning Mao, Hao Wang, Chengwang Niu, Baibiao Huang, and Ying Dai. "Two-dimensional ferroelastic topological insulator with tunable topological edge states in single-layer ZrAsX (X = Br and Cl)." Journal of Materials Chemistry C 7, no. 31 (2019): 9743–47. http://dx.doi.org/10.1039/c9tc02713k.
Повний текст джерелаZhang, Jun, Zeping Peng, Ajay Soni, Yanyuan Zhao, Yi Xiong, Bo Peng, Jianbo Wang, Mildred S. Dresselhaus, and Qihua Xiong. "Raman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3Nanoplatelets." Nano Letters 11, no. 6 (June 8, 2011): 2407–14. http://dx.doi.org/10.1021/nl200773n.
Повний текст джерелаZou, Yi-Chao, Zhi-Gang Chen, Enze Zhang, Fantai Kong, Yan Lu, Lihua Wang, John Drennan, et al. "Atomic disorders in layer structured topological insulator SnBi2Te4 nanoplates." Nano Research 11, no. 2 (August 17, 2017): 696–706. http://dx.doi.org/10.1007/s12274-017-1679-z.
Повний текст джерелаSung, Ji Ho, Hoseok Heo, Inchan Hwang, Myungsoo Lim, Donghun Lee, Kibum Kang, Hee Cheul Choi, Jae-Hoon Park, Seung-Hoon Jhi, and Moon-Ho Jo. "Atomic Layer-by-Layer Thermoelectric Conversion in Topological Insulator Bismuth/Antimony Tellurides." Nano Letters 14, no. 7 (June 18, 2014): 4030–35. http://dx.doi.org/10.1021/nl501468k.
Повний текст джерелаZhang, Ye, Qi You, Weichun Huang, Lanping Hu, Jianfeng Ju, Yanqi Ge, and Han Zhang. "Few-layer hexagonal bismuth telluride (Bi2Te3) nanoplates with high-performance UV-Vis photodetection." Nanoscale Advances 2, no. 3 (2020): 1333–39. http://dx.doi.org/10.1039/d0na00006j.
Повний текст джерелаZhang, Guanhua, Huajun Qin, Jing Teng, Jiandong Guo, Qinlin Guo, Xi Dai, Zhong Fang, and Kehui Wu. "Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3." Applied Physics Letters 95, no. 5 (August 3, 2009): 053114. http://dx.doi.org/10.1063/1.3200237.
Повний текст джерелаFang, Mingsheng, Zhengyu Wang, Honggang Gu, Mingyu Tong, Baokun Song, Xiangnan Xie, Tong Zhou, et al. "Layer-dependent dielectric permittivity of topological insulator Bi2Se3 thin films." Applied Surface Science 509 (April 2020): 144822. http://dx.doi.org/10.1016/j.apsusc.2019.144822.
Повний текст джерелаYao, Xiong, Hee Taek Yi, Deepti Jain, Myung-Geun Han, and Seongshik Oh. "Spacer-Layer-Tunable Magnetism and High-Field Topological Hall Effect in Topological Insulator Heterostructures." Nano Letters 21, no. 14 (July 15, 2021): 5914–19. http://dx.doi.org/10.1021/acs.nanolett.1c00668.
Повний текст джерелаYeats, Andrew L., Yu Pan, Anthony Richardella, Peter J. Mintun, Nitin Samarth, and David D. Awschalom. "Persistent optical gating of a topological insulator." Science Advances 1, no. 9 (October 2015): e1500640. http://dx.doi.org/10.1126/sciadv.1500640.
Повний текст джерелаLi, Yaoxin, Chang Liu, Yongchao Wang, Hao Li, Yang Wu, Jinsong Zhang, and Yayu Wang. "Gate-tunable magnetoresistance in six-septuple-layer MnBi2Te4." Journal of Physics D: Applied Physics 55, no. 10 (December 1, 2021): 104001. http://dx.doi.org/10.1088/1361-6463/ac3538.
Повний текст джерелаZhu, Zhen, Michał Papaj, Xiao-Ang Nie, Hao-Ke Xu, Yi-Sheng Gu, Xu Yang, Dandan Guan, et al. "Discovery of segmented Fermi surface induced by Cooper pair momentum." Science 374, no. 6573 (December 10, 2021): 1381–85. http://dx.doi.org/10.1126/science.abf1077.
Повний текст джерелаVirwani, Kumar, Sara E. Harrison, Aakash Pushp, Teya Topuria, Eugene Delenia, Philip Rice, Andrew Kellock, et al. "Controlled removal of amorphous Se capping layer from a topological insulator." Applied Physics Letters 105, no. 24 (December 15, 2014): 241605. http://dx.doi.org/10.1063/1.4904803.
Повний текст джерелаTraverso, Simone, Niccolò Traverso Ziani, and Maura Sassetti. "Effects of the Vertices on the Topological Bound States in a Quasicrystalline Topological Insulator." Symmetry 14, no. 8 (August 19, 2022): 1736. http://dx.doi.org/10.3390/sym14081736.
Повний текст джерелаHoltgrewe, Kris, Conor Hogan, and Simone Sanna. "Evolution of Topological Surface States Following Sb Layer Adsorption on Bi2Se3." Materials 14, no. 7 (April 2, 2021): 1763. http://dx.doi.org/10.3390/ma14071763.
Повний текст джерелаLu, Hua, Yangwu Li, Zengji Yue, Mingwen Zhang, Xuetao Gan, Dikun Li, Dong Mao, and Jianlin Zhao. "Integration of topological insulator nanogap with atomic single layer for boosting photoluminescence." Optical Materials 122 (December 2021): 111786. http://dx.doi.org/10.1016/j.optmat.2021.111786.
Повний текст джерелаLiu, Han, and Peide D. Ye. "Atomic-layer-deposited Al2O3 on Bi2Te3 for topological insulator field-effect transistors." Applied Physics Letters 99, no. 5 (August 2011): 052108. http://dx.doi.org/10.1063/1.3622306.
Повний текст джерелаTajkov, Zoltán, Dávid Visontai, László Oroszlány, and János Koltai. "Topological Phase Diagram of BiTeX–Graphene Hybrid Structures." Applied Sciences 9, no. 20 (October 15, 2019): 4330. http://dx.doi.org/10.3390/app9204330.
Повний текст джерелаBake, Abdulhakim, Weiyao Zhao, David Mitchell, Xiaolin Wang, Mitchell Nancarrow, and David Cortie. "Lamellae preparation for atomic-resolution STEM imaging from ion-beam-sensitive topological insulator crystals." Journal of Vacuum Science & Technology A 40, no. 3 (May 2022): 033203. http://dx.doi.org/10.1116/6.0001771.
Повний текст джерелаGhasempour Ardakani, Abbas, and Zahra Zare. "Strong Faraday rotation in a topological insulator single layer using dielectric multilayered structures." Journal of the Optical Society of America B 38, no. 9 (August 16, 2021): 2562. http://dx.doi.org/10.1364/josab.431370.
Повний текст джерелаLiao, Liyang, Peng Chen, Xufeng Kou, Feng Pan, and Cheng Song. "Tuning the magnetotransport behavior of topological insulator with a transition-metal oxide layer." Journal of Physics: Condensed Matter 31, no. 40 (July 12, 2019): 405001. http://dx.doi.org/10.1088/1361-648x/ab2f53.
Повний текст джерелаTalantsev, E. F., W. P. Crump, and J. L. Tallon. "Two-band induced superconductivity in single-layer graphene and topological insulator bismuth selenide." Superconductor Science and Technology 31, no. 1 (November 29, 2017): 015011. http://dx.doi.org/10.1088/1361-6668/aa9800.
Повний текст джерелаGong, Qi, and Guiling Zhang. "Spin-Orbit Coupling Electronic Structures of Organic-Group Functionalized Sb and Bi Topological Monolayers." Nanomaterials 12, no. 12 (June 14, 2022): 2041. http://dx.doi.org/10.3390/nano12122041.
Повний текст джерелаTung, Jen-Chuan, Chi-Hsuan Lee, Po-Liang Liu, and Yin-Kuo Wang. "Electronic Band Structures of the Possible Topological Insulator Pb2BiBrO6 and Pb2SeTeO6 Double Perovskite: An Ab Initio Study." Applied Sciences 12, no. 12 (June 10, 2022): 5913. http://dx.doi.org/10.3390/app12125913.
Повний текст джерелаLiu, Tingmin, Linyi Zhou, and Y. C. Tao. "Anomalous Josephson effect modulated by magnetic misorientation in a topological unconventional superconductor hybrid structure." Europhysics Letters 136, no. 1 (October 1, 2021): 17004. http://dx.doi.org/10.1209/0295-5075/ac2f0e.
Повний текст джерелаLuo, Zhengqian, Yizhong Huang, Jian Weng, Huihui Cheng, Zhiqing Lin, Bin Xu, Zhiping Cai та Huiying Xu. "106μm Q-switched ytterbium-doped fiber laser using few-layer topological insulator Bi_2Se_3 as a saturable absorber". Optics Express 21, № 24 (21 листопада 2013): 29516. http://dx.doi.org/10.1364/oe.21.029516.
Повний текст джерелаSong, Can-Li, Yi-Lin Wang, Ye-Ping Jiang, Yi Zhang, Cui-Zu Chang, Lili Wang, Ke He, et al. "Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy." Applied Physics Letters 97, no. 14 (October 4, 2010): 143118. http://dx.doi.org/10.1063/1.3494595.
Повний текст джерелаEddrief, Mahmoud, Paola Atkinson, Victor Etgens, and Bernard Jusserand. "Low-temperature Raman fingerprints for few-quintuple layer topological insulator Bi2Se3films epitaxied on GaAs." Nanotechnology 25, no. 24 (May 23, 2014): 245701. http://dx.doi.org/10.1088/0957-4484/25/24/245701.
Повний текст джерелаLiang, Jinghua, Long Cheng, Jie Zhang, Huijun Liu, and Zhenyu Zhang. "Maximizing the thermoelectric performance of topological insulator Bi2Te3films in the few-quintuple layer regime." Nanoscale 8, no. 16 (2016): 8855–62. http://dx.doi.org/10.1039/c6nr00724d.
Повний текст джерелаHao, Guolin, Xiang Qi, Yundan Liu, Zongyu Huang, Hongxing Li, Kai Huang, Jun Li, Liwen Yang, and Jianxin Zhong. "Ambipolar charge injection and transport of few-layer topological insulator Bi2Te3 and Bi2Se3 nanoplates." Journal of Applied Physics 111, no. 11 (June 2012): 114312. http://dx.doi.org/10.1063/1.4729011.
Повний текст джерелаPedramrazi, Zahra, Charlotte Herbig, Artem Pulkin, Shujie Tang, Madeleine Phillips, Dillon Wong, Hyejin Ryu, et al. "Manipulating Topological Domain Boundaries in the Single-Layer Quantum Spin Hall Insulator 1T′–WSe2." Nano Letters 19, no. 8 (July 22, 2019): 5634–39. http://dx.doi.org/10.1021/acs.nanolett.9b02157.
Повний текст джерелаChen, Shuqing, Lili Miao, Xing Chen, Yu Chen, Chujun Zhao, Subhadeep Datta, Ying Li, et al. "Few-Layer Topological Insulator for All-Optical Signal Processing Using the Nonlinear Kerr Effect." Advanced Optical Materials 3, no. 12 (September 16, 2015): 1769–78. http://dx.doi.org/10.1002/adom.201500347.
Повний текст джерелаZheng, L., T. T. Li, R. Jin, M. Lei, Y. J. Xu, X. S. Yang, K. Zhao, B. Sun, Y. Zhang, and Y. Zhao. "The interface superconductivity of Bi2Se3/Fe–Se heterostructure." International Journal of Modern Physics B 32, no. 32 (December 30, 2018): 1850355. http://dx.doi.org/10.1142/s0217979218503551.
Повний текст джерелаYeats, Andrew L., Peter J. Mintun, Yu Pan, Anthony Richardella, Bob B. Buckley, Nitin Samarth, and David D. Awschalom. "Local optical control of ferromagnetism and chemical potential in a topological insulator." Proceedings of the National Academy of Sciences 114, no. 39 (September 12, 2017): 10379–83. http://dx.doi.org/10.1073/pnas.1713458114.
Повний текст джерелаКавеев, А. К., та О. Е. Терещенко. "Оптимизация буферного диэлектрического слоя для создания малодефектных эпитаксиальных пленок топологического изолятора Pb-=SUB=-1-x-=/SUB=-Sn-=SUB=-x-=/SUB=-Te c x≥0.4". Физика и техника полупроводников 56, № 7 (2022): 642. http://dx.doi.org/10.21883/ftp.2022.07.52753.08.
Повний текст джерелаXu, Jin. "Cloaking magnetic field and generating electric field with topological insulator and superconductor bi-layer sphere." AIP Advances 7, no. 12 (December 2017): 125220. http://dx.doi.org/10.1063/1.5010205.
Повний текст джерелаAparimita, Adyasha, C. Sripan, R. Ganesan, and R. Naik. "Photo and thermal induced Bi2Se3 formation from Bi/GeSe2 hetero junction layer for topological insulator." Optical Materials 89 (March 2019): 157–63. http://dx.doi.org/10.1016/j.optmat.2019.01.043.
Повний текст джерелаSapkota, Yub Raj, Asma Alkabsh, Aaron Walber, Hassana Samassekou, and Dipanjan Mazumdar. "Optical evidence for blue shift in topological insulator bismuth selenide in the few-layer limit." Applied Physics Letters 110, no. 18 (May 2017): 181901. http://dx.doi.org/10.1063/1.4982631.
Повний текст джерелаChen, Jihan, Jaehyun Kim, Nirakar Poudel, Bingya Hou, Lang Shen, Haotian Shi, Li Shi, and Stephen Cronin. "Enhanced thermoelectric efficiency in topological insulator Bi2Te3 nanoplates via atomic layer deposition-based surface passivation." Applied Physics Letters 113, no. 8 (August 20, 2018): 083904. http://dx.doi.org/10.1063/1.5030674.
Повний текст джерелаMen’shov, V. N., V. V. Tugushev, and E. V. Chulkov. "Bound states induced by a ferromagnetic delta-layer inserted into a three-dimensional topological insulator." JETP Letters 96, no. 7 (December 2012): 445–51. http://dx.doi.org/10.1134/s0021364012190113.
Повний текст джерелаLiang, Jing, Yu Jun Zhang, Xiong Yao, Hui Li, Zi-Xiang Li, Jiannong Wang, Yuanzhen Chen, and Iam Keong Sou. "Studies on the origin of the interfacial superconductivity of Sb2Te3/Fe1+yTe heterostructures." Proceedings of the National Academy of Sciences 117, no. 1 (December 19, 2019): 221–27. http://dx.doi.org/10.1073/pnas.1914534117.
Повний текст джерелаYang, Jingnan, Yuhang Li, Kan Tian, Fenfen Liu, Xiaodan Dou, Yanjun Ma, Wenjuan Han, Honghao Xu, and Junhai Liu. "Passive Q-switching of an Yb:GdCa4O(BO3)3 laser induced by a few-layer Bi2Te3 topological insulator saturable absorber." Laser Physics Letters 15, no. 12 (October 23, 2018): 125802. http://dx.doi.org/10.1088/1612-202x/aae5b0.
Повний текст джерелаKaveev, A. K., D. N. Bondarenko, and O. E. Tereshchenko. "The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films." Journal of Physics: Conference Series 2103, no. 1 (November 1, 2021): 012086. http://dx.doi.org/10.1088/1742-6596/2103/1/012086.
Повний текст джерелаLongo, Emanuele, Claudia Wiemer, Matteo Belli, Raimondo Cecchini, Massimo Longo, Matteo Cantoni, Christian Rinaldi, et al. "Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator." Journal of Magnetism and Magnetic Materials 509 (September 2020): 166885. http://dx.doi.org/10.1016/j.jmmm.2020.166885.
Повний текст джерелаXie, Hangkai, Fucong Fei, Fenzhen Fang, Bo Chen, Jingwen Guo, Yu Du, Wuyi Qi, et al. "Charge carrier mediation and ferromagnetism induced in MnBi6Te10 magnetic topological insulators by antimony doping." Journal of Physics D: Applied Physics 55, no. 10 (December 6, 2021): 104002. http://dx.doi.org/10.1088/1361-6463/ac3790.
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