Дисертації з теми "TiS3"
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Santos, Ana Camila Santos dos. "Produção de eletrodos por modificações superficiais de Ti e caracterização do seu desempenho na intercalação de Li+." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2013. http://hdl.handle.net/10183/143823.
Повний текст джерелаIn this study, different surface modifications of titanium (Ti) were studied as a method of surface preparation of electrodes for ion lithium batteries (Li+). Initially, the modifications were produced by micro-indentation with subsequent electrochemical pitting corrosion in solutions of bromide. The polished surfaces, heat treated and modified through micro indentations were evaluated for different values of parameters, such as applied potential, concentration of aggressive ions in the electrolyte, temperature, polarization time, and mainly intensity of the deformation caused by indentations for localizing holes produced by pitting. It was expected the adjust of location of these parameter settings promotes nucleation of pits, according to the pattern of indentations and growth of pitting depth for increased surface area. Porous films of titania (TiO2) were produced on pure Ti by plasma anodization (or sparking) in 1M H3PO4 and 1M Na2SO4. Nanotubes were synthesized by porous anodization in 1M NaOH + 1M H3PO4 + 0.4 (wt%) HF. The results showed oxide "sponge" like formed by plasma anodization, incorporating elements of the electrolyte containing respectively, P and S in a ratio P/O> S/O and, in nanotubular oxides, with predominant incorporation of F. Subsequently, the pitted surfaces and the surfaces of oxides grown by plasma anodization were converted by sulfidation into different micro and nanostructured materials consisting of titanium sulfide and oxisulfides by adjusting the process conditions. The proposed development has shown that it is possible to modify the chemical composition of the oxide formed by plasma anodizing to nanocrystals of TiS2 and nanobelts of TiS3 and TiOxSy without damaging the original morphology of the nanoporous TiO2. The formed compounds can be used as three-dimensional (3D) nanoarchitectured electrodes for ion lithium batteries (Li+) with high power density. The synthesis of these compounds is promising due to a higher ability to intercalate more ions lithium than pure TiO2, resulting in an improvement in the capacity of microbatteries.
Kabelková, Markéta. "Materiálový tisk světelných dozimetrů." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2019. http://www.nusl.cz/ntk/nusl-401915.
Повний текст джерелаPetříčková, Zuzana. "Materiálový tisk ozonových dozimetrů." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2019. http://www.nusl.cz/ntk/nusl-401916.
Повний текст джерелаAzariová, Viktória. "Tisk up-konverzních značek." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2019. http://www.nusl.cz/ntk/nusl-401917.
Повний текст джерелаKašpárková, Kristýna. "3D tisk kompozitních materiálů." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2020. http://www.nusl.cz/ntk/nusl-417454.
Повний текст джерелаTvrdoň, Radek. "3D tisk kovů robotem." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2021. http://www.nusl.cz/ntk/nusl-443161.
Повний текст джерелаŠremrová, Vendula. "3D tisk optomechanických zařízení." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2021. http://www.nusl.cz/ntk/nusl-444972.
Повний текст джерелаIštvánek, Jan. "Dispenzní tisk tlustovrstvých past." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2010. http://www.nusl.cz/ntk/nusl-218811.
Повний текст джерелаTřešňáková, Andrea. "Materiálový tisk UV dozimetrů." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2017. http://www.nusl.cz/ntk/nusl-316153.
Повний текст джерелаBarbosa, Quiroga David Antonio. "Processamento e propriedades do sistema ferroelétrico livre de chumbo (Bi, Na)TiO3 (Bi, K)TiO3 BaTiO3." Universidade Federal de São Carlos, 2015. https://repositorio.ufscar.br/handle/ufscar/5075.
Повний текст джерелаFinanciadora de Estudos e Projetos
In this work, the lead-free ceramic powders of xBi0,5Na0,5TiO3 - (0,7186 - 0,7143x) Bi0,5K0,5TiO3 - (2814 - 2857x) BaTiO with x = 0,8200; 0,8625; 0,8792, 0,9126 and 0,9300 (BNBK1000x) were prepared by the solid state reaction method, followed by conventional densification. The ceramic bodies showed high density, which was higher than 95% in obtained samples. For the all ceramics were performed structural, micro structural, electric and anelastic characterizations. The X-ray diffraction (XRD) analysis indicated the formation of the complex perovskite type crystaline structure for all compositions analyzed without the presence of spurious phases. By the structural refinement by the Rietveld method of XRD data and by Raman spectroscopy were observed that for BNBK912 and BNBK930 compositions, at room temperature, the predominant symmetry is rhombohedral (R3c), while the BNBK820 composition exhibits a tetragonal crystalline symmetry (P4mm). For the BNBK879 and BNBK826 compositions presented a mixture of phases, possibly with rhombohedral and tetragonal symmetry, reaveling the morphotropic phase boundary (MPB) of this system. The microstructure of BNBK1000x ceramics was investigated by scanning electron microscopy (SEM), where the morphology grains with irregular sizes and shapes, where the increased levels of K+ and Ba2+ ions suppressed the growth of the grains. The characterizations by Raman spectroscopy at room temperature showed broad Raman modes, due to the chemical and/or structural disorder related to the substitution of elements Bi and Na for Ba and K. The ferroelectric characterizations at room temperature of the BNBK1000x ceramics showed that all compositions studied are ferroelectric. Through the comparison among the measurements of electrical impedance and mechanical spectroscopy, was possible to identify the different structural and electric phase transitions that were employed in the construction of a pseudodiagram of phases for the BNBK1000x compositions.
Neste trabalho, os pós-cerâmicos livres de chumbo xBi0,5Na0,5TiO3 - (0,7186 - 0,7143x) Bi0,5K0,5TiO3 - (2814 - 2857x) BaTiO com x = 0,8200; 0,8625; 0,8792, 0,9126 e 0,9300 (BNBK1000x) foram obtidos através do método de reação de estado sólido, seguido por densificação convencional. Os corpos cerâmicos obtidos apresentaram elevada densificação, sendo maior que 95% nas amostras produzidas. Para todas as cerâmicas foram realizadas caracterizações estruturais, microestruturais, elétricas e anelásticas. As análises por difração de raios-X (DRX) indicaram a formação da estrutura cristalina tipo perovkista complexa para todas as composições analisadas, sem a presença de fases espúrias. O refinamento estrutural, pelo método de Rietveld, dos resultados de DRX e os resultados de espectroscopia Raman apontam que para as composições BNBK930 e BNBK912 a simetria predominante em temperatura ambiente é romboédrica (R3c), enquanto que a composição BNBK820 apresenta a simetria cristalina tetragonal (P4mm). Já as composições BNBK879 e BNBK862 apresentaram uma mistura de fases, possivelmente com simetrias romboédrica e tetragonal, evidenciando o contorno de fase morfotrópico (CFM) deste sistema. A microestrutura das cerâmicas de BNBK1000x foi investigada por microscopia eletrônica de varredura (MEV), onde a morfologia apresentada pelas diferentes composições estudadas possuíam grãos com tamanhos e formatos irregulares, sendo que o aumento dos teores dos íons de K+ e Ba2+ inibiram o crescimento dos grãos. A caracterização por espectroscopia Raman, em temperatura ambiente, apresentou modos Raman amplos, mostrando um elevado grau de desordem química e/ou estrutural devido à substituição dos elementos Bi e Na por Ba e K. As caracterizações ferroelétricas, também em temperatura ambiente das cerâmicas de BNBK1000x mostraram que todas as composições estudadas possuem propriedades ferroelétricas. Através da comparação entre as medidas de impedância elétrica e anelástica, levando em consideração as caracterizações estruturais e ferroelétricas com temperatura, foi possível identificar diferentes transições de fase estruturais e elétricas, que foram empregadas na construção de um pseudo-diagrama de fases para as composições de BNBKx.
Janiš, Adam. "Mechanické vlastnosti materiálů pro 3D tisk." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2021. http://www.nusl.cz/ntk/nusl-442479.
Повний текст джерелаWard, James Mace. "No saint : Jozef Tiso, 1887-1947 /." May be available electronically:, 2008. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.
Повний текст джерелаMűller, Jakub. "Kompozitní tisk pro 3D FDM tiskárnu." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2018. http://www.nusl.cz/ntk/nusl-382278.
Повний текст джерелаKnobová, Klára. "Materiálový tisk na R2R tiskovém stroji." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2015. http://www.nusl.cz/ntk/nusl-217099.
Повний текст джерелаSilva, Guerrero Fernando Javier. "Francés TI3 - TR77 201801." Universidad Peruana de Ciencias Aplicadas (UPC), 2018. http://hdl.handle.net/10757/623359.
Повний текст джерелаPetřík, Radek. "Informační systém pro evidenci a tisk zásilek." Master's thesis, Vysoké učení technické v Brně. Fakulta informačních technologií, 2008. http://www.nusl.cz/ntk/nusl-235436.
Повний текст джерелаZelko, Lukáš. "Píst zážehového motoru pro 3-D tisk." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2019. http://www.nusl.cz/ntk/nusl-400468.
Повний текст джерелаČáslavský, František. "Zkoušky vybraných vlastností materiálů pro 3D tisk." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2019. http://www.nusl.cz/ntk/nusl-400683.
Повний текст джерелаMartiniaková, Ivana. "Formulace inkoustů pro materiálový tisk chemických značek." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2019. http://www.nusl.cz/ntk/nusl-401918.
Повний текст джерелаHospodárová, Mária. "Hospodárstvo slovenského štátu a Dr. Jozef Tiso." Master's thesis, Vysoká škola ekonomická v Praze, 2007. http://www.nusl.cz/ntk/nusl-843.
Повний текст джерелаŠlemr, Jakub. "Vliv okolních dřevin na dendrometrické charakteristiky tisu." Master's thesis, Česká zemědělská univerzita v Praze, 2016. http://www.nusl.cz/ntk/nusl-256940.
Повний текст джерелаHrdlička, Martin. "Vliv teploty vzduchu na FDM 3D tisk." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2017. http://www.nusl.cz/ntk/nusl-318133.
Повний текст джерелаEduardo, Ariadne Canedo. "Síntese e propriedade fotoluminescente do core-shell Ca(1-x)TiO3:Yb(x)@Ca(1-y)TiO3:Er(y)." Universidade Federal de Goiás, 2015. http://repositorio.bc.ufg.br/tede/handle/tede/4666.
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In recent years, research in the nanocomposites area of core-shell type increased significantly. The core-shell type nanoparticles with photoluminescence properties (PL) attract much attention from the scientific community. Are also of great interest nanoparticles that exhibit the upconversion energy, i.e. they absorbing low energy photons and emission high-energy photons. The present work has as objective nanocomposites synthesis of core-shell type, with CaTiO3 matrix (CT) and doped with rare earth ions Er3+ and Yb3+ in a variety composition and variations, to analysis the photoluminescent properties. The nanoparticles of the core and shell were obtained by the Method of Polymeric Precursors. The samples were characterized by X-ray diffraction (XRD) for structural characterization, and it was found that All samples presented the perovskite structure of the orthorhombic type. The characterization by Transmission Electron Microscopy (TEM) failed to demonstrate the formation of core-shell, requiring analysis by Energy Dispersive X-ray (EDX), which showed the presence of rare earth Er3+ and Yb3+ in the different layers. The UV-Vis gap allowed the calculation of the shell and core samples. The PL emission results were used to relate the thickness of the shell and the intensity of the emission. On the other hand, to study the upconversion energy, core materials showed a higher intensity than in the core-shell; the best intensity in the core-shell was found with doping the core with Yb3+ and Yb3+ with shell and Er3+ suggesting the transfer of energy between the layers.
Nos últimos anos, pesquisas na área de nanocompósitos do tipo core-shell cresceram significativamente. Atualmente nanopartículas do tipo core-shell com propriedades fotoluminescente (FL) atraem muita atenção da comunidade científica. Também são de grande interesse nanopartículas que apresentam a conversão ascendente de energia, ou seja, absorção de fótons de baixa energia e emissão de fótons de alta energia. O presente trabalho teve como objetivo a síntese de nanocompósitos do tipo core-shell, com a matriz CaTiO3 (CT) e dopagem com os íons terras raras Er3+ e Yb3+ nas mais variadas composições, para análise da propriedade fotoluminescente. As nanopartículas do core e do shell foram obtidas pelo Métodos dos Precursores Poliméricos. As amostras foram caracterizadas por Difração de Raios X (DRX) para caracterização estrutural, e foi constatada que todas as amostras apresentaram a estrutura perovsquita do tipo ortorrômbica. A caracterização por Microscopia Eletrônica de Transmissão (MET) não foi conclusiva quanto a formação do core-shell, sendo necessária a análise por Energia Dispersiva de Raios X (EDX), na qual verificou-se a presença das terras raras Er3+ e Yb3+ nas diferentes camadas. A espectroscopia de UV-Vis permitiu o cálculo do gap para as amostras core e shell. Os resultados de emissão FL foram utilizados para relacionar a espessura do shell e a intensidade da emissão. Por outro lado, ao estudar a conversão ascendente de energia, os materiais core apresentaram maior intensidade do que no core-shell; a melhor intensidade no core-shell foi verificada com a dopagem do core com Yb3+ e do shell com Yb3+ e Er3+, sugerindo a transferência de energia entre as camadas.
Zhang, Shengtao. "Klonierung, Expression und initiale Charakterisierung vom humanen TIM3." Doctoral thesis, [S.l.] : [s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=972570357.
Повний текст джерелаNóbrega, Jaldair Araújo e. "Síntese e Caraterização de MgxPb(1-x)TiO3." Universidade Federal de São Carlos, 2015. https://repositorio.ufscar.br/handle/ufscar/9373.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
We report the investigation of structural, optical and electrical properties of the MgxPb(1- x)TiO3 ceramic system produced by mechanosynthesis. The solid state reaction manufacturing method has been proved to be an efficient alternative to manufacture this type of material. By using Raman spectroscopy techniques it was possible observe the effects induced by pressure, from 0 up to 14 GPa, and by temperature from 10 up to 723 K for the samples with x ranging from 0.2 to 1.0. Complementary characterization techniques were also used, including X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Optical Absorption Spectroscopy and Electrical Impedance. XRD enabled the study of structural changes related to the increase in Mg concentrations. Raman analysis allowed the study of vibrational modes, in particular the transversely optical mode E(1TO) of lower frequency in order to characterize the phase transition from tetragonal-ferroelectric to cubic-paraelectric phases. From these results it was possible to construct a phase diagram that relates Mg concentration, temperature and hydrostatic pressure, yielding determine critical temperature (Tc) and critical pressure (Pc) in which phase transition occurs for each sample. Permittivity dielectric measurements were performed for each material, through which it was possible to compare the effects of Mg ratios in the modification of the values of these properties. Finally, a study of optical absorption as a function of Mg concentration was conducted, evidencing changes in gap energies related to the increase of Mg incorporation. The lowest values, 2.86 and 2.9 eV correspond to samples with concentrations of 0.4 and 0.2, respectively. Thus, from a technological point of view, these characteristics are interesting for applications in devices operating in the microwave region.
Neste trabalho foram investigados os efeitos estruturais, ópticos e elétricos do sistema cerâmico MgxPb(1-x)TiO3 produzido por mecano-síntese. O método de fabricação de reação de estado sólido mostrou-se uma alternativa eficiente de fabricação do material. Utilizandose de técnicas de espectroscopia Raman, foram observados os efeitos da pressão, de 0 a 14 GPa, e temperatura, de 10 a 723 K, para as amostras com x variando de 0,2 a 1,0. Também foram usadas técnicas complementares de caracterização entre elas a Difração de Raio-X (DRX), Microscopia Eletrônica de Varredura (MEV), Absorção Óptica e de Espectroscopia de Impedância Elétrica. A técnica de DRX possibilitou o estudo da alteração estrutural relacionada ao aumento das concentrações de Mg. As análises Raman permitiram o estudo dos modos vibracionais, em especial o modo transversal óptico E(1TO) de mais baixa frequência, a fim de caracterizar a transição de fase, da fase tetragonal ferroelétrica para a cúbica paraelétrica. A partir desses resultados foi possível construir um diagrama de fase relativo à concentração de Mg, com a temperatura e pressão hidrostática, obtendo-se temperatura crítica (Tc) e pressão crítica (Pc) nas quais ocorrem transição de fase para cada amostra. Foram realizadas medidas de permissividades dielétricas para cada material, por meio das quais foi possível a comparação dos efeitos das proporções Mg na alteração dos valores dessas propriedades. Por fim, foi realizado um estudo de absorção óptica em função da concentração de Mg, onde mostrou-se que há alteração do gap relacionada ao aumento da concentração de Mg. Os valores mais baixos, 2,86 e 2,9 eV correspondem a amostras com concentração de 0,4 e 0,2, respectivamente. Assim, do ponto de vista tecnológico, as características encontradas mostram-se úteis para dispositivos que operam na região das micro-ondas.
Kandra, Mário. "3D tisk kmenových buněk a analýza mikroskopických obrazů." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-316923.
Повний текст джерелаBeránek, Ondřej. "Digitální zprovoznění robotizovaného výrobního systému pro 3D tisk." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2021. http://www.nusl.cz/ntk/nusl-443730.
Повний текст джерелаSlavíček, Jakub. "Konstrukce tiskové hlavy pro 3D tisk betonových směsí." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2020. http://www.nusl.cz/ntk/nusl-447551.
Повний текст джерелаČerný, Martin. "Stanovení mechanických vlastností materiálů používaných pro 3D tisk." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2019. http://www.nusl.cz/ntk/nusl-402542.
Повний текст джерелаŠmalec, Petr. "Konstrukční návrh extruderu pro 3D tisk kompozitních součástí." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2017. http://www.nusl.cz/ntk/nusl-318841.
Повний текст джерелаCaceda, Diaz Patricia, Xxxx Christopher Creighton Cox, and Cano Monica Terrones. "Inglés TI3 - TR06 2 01801." Universidad Peruana de Ciencias Aplicadas (UPC), 2018. http://hdl.handle.net/10757/623339.
Повний текст джерелаChien, Hsin-I. "Microfabrication of barium strontium titanate BaxSr(1-x)TiO3." Thesis, London South Bank University, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.618692.
Повний текст джерелаLacerda, Luis Henrique da Silveira. "INVESTIGAÇÃO TEÓRICA DOS MATERIAIS ZnO:Ba E (Ba, Zn)TiO3." UNIVERSIDADE ESTADUAL DE PONTA GROSSA, 2015. http://tede2.uepg.br/jspui/handle/prefix/2037.
Повний текст джерелаCoordenação de Aperfeiçoamento de Pessoal de Nível Superior
Semiconductors materials are largely employed on development of innumerous optical and electronic due to their electronic, optical, ferroelectric and structural properties. Among the semiconductors materials stand out the zinc oxide (ZnO) and the barium titanate (BaTiO3) once shows excellent properties allied to low cost to obtaining. The ZnO is a simple oxide used in technology and largely investigated as an alternative to replace high cost material on development of electronic devices. Similarly, the BaTiO3 has perovskite crystalline structure whose properties present great technological interest. This work evaluated the effect of Ba presence on wurtzite structure and the influence of Zn atoms on tetragonal BaTiO3 properties. The obtained results indicates that the Ba atoms changes drastically the band structure of ZnO, resulting in the decrease of band gap for low quantities and the semiconductor type modification for doping above 25 %. The insertion of such atoms in wurtzite also causes the improvement of ferroelectric properties and the increase of unit cell lattice parameters. In case of Zn-doped BaTiO3, the doping process reduces radically de band gap and the ferroelectric properties regarding to pure material. Likewise, the semiconductor type is also modified by the Zn atoms presence. Based on obtained results for both crystalline systems, was proposed their employed in formation of p-n heterojunction. The heterostructure was evaluated through of four models. The obtained results for each one of these models were used to describe the interface region of ZnO/BaTiO3 heterojunction, proving that the atoms intercalation occurs and is responsible for heterostructure properties. Such properties present this heterostructure as a potential alternative for development of electronic devices, mainly the development of memory devices. The obtained heterostructure requires a low amount energy to electronic conduction process and shows high compatibility between the structure of heterojunction and the SiO2 substrate which is used in development of such devices.
Materiais semicondutores são amplamente empregados no desenvolvimento de vários dispositivos ópticos e eletrônicos variados devido às suas propriedades eletrônicas, ópticas, ferroelétricas e estruturais. Dentre os materiais semicondutores, destacam-se o óxido de zinco (ZnO) e o Titanato de Bário (BaTiO3) uma vez que apresentam excelentes propriedades aliadas ao baixo custo de síntese. O ZnO é um óxido simples amplamente empregado na tecnologia e largamente investigado como uma alternativa para substituição de materiais de custo elevado no desenvolvimento de dispositivos eletrônicos. Por sua vez, o BaTiO3 é um material de estrutura cristalina perovskita cujas propriedades são de grande interesse tecnológico. No presente trabalho avaliou-se o efeito da presença de átomos de Ba na estrutura wurtzita do ZnO e a influência dos átomos de Zn sobre as propriedades do BaTiO3 tetragonal. Os resultados indicaram que os átomos de bário alteram drasticamente a estrutura de bandas do ZnO, resultando na diminuição do band gap para pequenas quantidades e a modificação do tipo de semicondutor para dopagens superiores a 25%. A inserção de tais átomos na estrutura wurtzita também é responsável pelo aprimoramento das propriedades ferroelétricas do material, bem como pelo aumento dos parâmetros de rede da célula unitária. No caso da estrutura do BaTiO3 dopada com Zn observou-se a redução drástica do band gap para o material e a modificação do caráter semicondutor do material; entretanto, ocorreu a redução das propriedades ferroelétricas em relação ao BaTiO3 puro. Com base nos resultados obtidos para ambos os sistemas cristalinos, propôs-se a sua utilização para formação de uma heterojunção do tipo p-n. A heteroestrutura foi avaliada por meio de quatro modelos diferentes. Os resultados obtidos para cada um destes modelos foram utilizados para descrição da estrutura eletrônica da região de interface da heterojunção, comprovando que a intercalação de átomos na interface é observada e mostra-se responsável pelas propriedades observadas para a heteroestrutura. Tais propriedades apontam a heterojunção ZnO/BaTiO3 como uma alternativa em potencial para aplicação no desenvolvimento de dispositivos eletrônicos e, principalmente, no desenvolvimento de dispositivos de armazenamento de dados, devido a diminuição de energia necessária para condução eletrônica.
Kalabza, Marek. "Aplikace pro generování a tisk štítků v systému SAP." Master's thesis, Vysoké učení technické v Brně. Fakulta informačních technologií, 2021. http://www.nusl.cz/ntk/nusl-445500.
Повний текст джерелаKrejčiřík, Petr. "Bezpodporový 3D tisk na 6-ti osém robotickém rameni." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2018. http://www.nusl.cz/ntk/nusl-379041.
Повний текст джерелаLa, Rocque Lance. "Revolution and retreat, the success and failure of Tish subjectivities." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape9/PQDD_0006/NQ43438.pdf.
Повний текст джерелаGao, Jie. "Sol-Gel (BaxSr1-x)TiO3 thin films for microelectronic applications." Master's thesis, Universidade de Aveiro, 2007. http://hdl.handle.net/10773/4812.
Повний текст джерелаDielectric, piezoelectric and ferroelectric thin films have been in the past years significantly studied because of their technological interest in a wide range of applications in the microelectronics industry. Among the several ferroelectric materials, compositions within the solid solution between the ferroelectric BaTiO3 and the quantum paraelectric SrTiO3 (Ba1-xSrx)TiO3 (BST), possess high dielectric constant and relatively low loss over a wide frequency range (till >1 GHz), low-leakage current density, a large electric field dielectric tunability and a composition dependent Curie temperature. These properties make BST thin films attractive for high density dynamic random access memories (DRAMs), and low cost agile microwave circuits, such as phase shifters, tunable filters, tunable matching network and high tuning frequency range voltage controlled oscillators. Moreover BST is a lead free perovskite making it an ideal material from the environmental point of view. These applications require the growth of high quality BST thin films, in addition to fundamental understanding of their structural and dielectric properties, which often diverge from those in equivalent bulk material. The high temperatures required for the crystallization of the perovskite BST films are not compatible with Si based large scale integrated circuits. SiO2 and/or metal silicides formation occurs when BST is deposited on silicon at temperatures above 700ºC. An underlying silicide layer reduces materials high dielectric permittivity, since silicide has lower permittivity than the perovskite oxide, reducing the film effective capacitance. At these high temperatures recrystallization of the electrode layer beneath the film (e.g. platinum layer) may occur, which can lead to hillock formation and electrical shorting of BST films. Moreover, thermal stresses generated at high temperatures might affect the long-term reliability of the device. Hence the improvement and optimization of the processing conditions of BST thin films as well as the development of low temperature processes for the fabrication of BST films are still a key aspect from the technologic point of view. Additionally, a low annealing temperature is also essential when metallic or glass substrates are required. The present master thesis addresses the investigation on the preparation of BST thin films by sol gel at temperatures lower than 700ºC. Sol-gel derived (Ba0.8Sr0.2)TiO3 thin films with improved dielectric properties were prepared at 600°C, on Pt/TiO2/SiO2/Si substrate through the use of diphasic precursor sols. BST nanometric powders were dispersed in the amorphous BST precursor sol to prepare the diphasic precursor sol and (Ba0.8Sr0.2)TiO3 thin films without and with 1 mol%, 5 mol% and 10 mol% (Ba0.8Sr0.2)TiO3 seeds were fabricated. The role of seeds was investigated and analyzed on the crystalline phase evolution, microstructure development and electrical properties of BST thin films. The improvement on the characteristics of seeded BST films when compared with unseeded films was highlighted by a comprehensive structural, microstructural and electric characterization of the films. It was shown that using perovskite BST nanopowders as seeds results in the crystallization of a single perovskite phase in BST films either at lower temperatures or at shorter annealing time when compared with the preparation of identical films without seeds. The presence of nano sized BST seeds in the film precursor sol lowers the barrier for BST nucleation and results in a high density of small crystallites in the film. XRD analysis showed that the temperature at which the perovskite phase is formed (or identified) was decreased from 650ºC to 550ºC when BST seeds were used in the precursor sols and the temperature at which the pure perovskite phase is obtained was decreased from 700ºC to 600ºC. The seeded BST films exhibit enhanced crystllization kinetics and the overall activation energy for the perovskite crystllization was reduced from 189 kJ/mol for the unseeded film to 86 kJ/mol for 1 mol% seeded BST film and to 80 kJ/mol for 5 mol% seeded film. Scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM) were employed to characterize the influence of seeds on the crystallinity, structure, microstructure, morphology and interface between BST thin films and the substrate. Both SEM and AFM surface morphology results showed that the grains of seeded films were smaller, more homogeneously distributed than unseeded ones. The surface roughness of BST films measured by AFM was decreased by the presence of BST nano seeds. TEM analysis clearly revealed that the crystallinity of BST films was enhanced with the presence of BST seeds under the same annealing conditions. The dielectric properties of BST thin films, including permittivity, loss tangent, tunability of the dielectric constant were evaluated and discussed as a function of seeds content. The dielectric constant of unseeded films annealed at 600ºC for 30 hours in oxygen were improved by the addition of 5 mol% seeds from ~300 to 400 at 1kHz, respectively. Simultaneously, the dissipation factors were decreased by the presence of 5 mol% seeds from ~0.1 to 0.07 at 1 kHz, from 0.07 to 0.01 at 1 MHz, respectively. The presence of 5 mol% seeds improved the tunability of BST films and an increment from 52% to 65% at 6 V was observed for unseeded and 5 mol% seeded BST thin films annealed at 600ºC for 30 hours in oxygen. The leakage current density of BST films with 5 mol% seeds heat treated at 600ºC for 30 hours in oxygen is 0.95×10-7 A/cm2 up to the applied voltage of 2.33 V (97 kV/cm), which was improved when compared with 0.88× 10-7 A/cm2 up to 2.02 V (84 kV/cm) measured for BST films without seeds. The value of the leakage current of both unseeded and 5 mol% seeded films meet the requirements for G-Byte DRAMs. Identically to the rest of the electrical properties, the polarization versus electric field (P-E) hysteresis was improved by the introduction of seeds. The remnant polarization Pr of BST films with 5 mol% seeds was 3.55 μC/cm2 with a coercive field of 75 kV/cm, which was considerably enhanced when compared with 1.8 μC/cm2 for BST films without seeds with a coercive field of 50 kV/cm. Corroborating the above results, piezo force microscopy (PFM) of BST seeded and non seeded thin films demonstrated the improved ferroelectric properties of BST films prepared with nanometric seeds.
Filmes finos dieléctricos, piezoeléctricos e ferroeléctricos têm sido muito estudados no passado recente, por causa do interesse tecnológico relacionado com a gama alargada de aplicações destes materiais na indústria microelectrónica. De entre os vários materiais ferroeléctricos, as composições pertencentes à solução sólida composta pelo ferroeléctrico BaTiO3 e o quantum paraléctrico SrTiO3, (Ba1-xSrx)TiO3 (BST), possuem constantes dieléctricas elevadas e baixas perdas dieléctricas até frequência elevadas (>1 GHz), baixas densidade de correntes de fuga, elevada sintonabilidade da permitividade dieléctrica com o campo eléctrico e temperatura de Curie dependente da composição. Estas propriedades tornam os filmes finos de BST atractivos para dispositivos de memórias dinâmicas de acesso aleatório DRAMs, e de circuitos sintonizáveis às frequências das microondas (phase shifters, tunable filters, tunable matching network and high tuning frequency range voltage controlled oscillators). Por outro lado BST é um material livre de chumbo o que o torna ideal do ponto de vista ambiental para estas aplicações. As aplicações acima mencionadas requerem o fabrico de filmes finos de BST de elevada qualidade, juntamente com o entendimento das relações entre a sua estrutura e propriedades, que muitas vezes divergem das propriedades apresentadas pelos materiais equivalentes na forma de monolitos. As elevadas temperaturas necessárias para a cristalização de fase de perovesquite em filmes finos de BST não é compatível com a integração em larga escala em circuitos à base de silício. A formação de SiO2 e ou silicietos metálicos ocorre quando BST é depositado sobre silício a temperaturas elevadas acima de 700ºC. Camadas subjacentes de silicietos reduzem a elevada permitividade dieléctrica relativa do material, já que estes silicietos têm permitividade dieléctrica relativa inferior à do óxido perovesquítico. A estas temperaturas elevadas pode ocorrer a recristalização do eléctrodo colocado sob o filme (por exemplo platina), o que origina o aparecimento de curto circuitos nos filmes de BST. Mais ainda, as tensões térmicas geradas às temperaturas elevadas podem afectar a longo prazo o desempenho e a fiabilidade do dispositivo. Assim o melhoramento e optimização das condições de fabrico de filmes finos de BST, bem como o desenvolvimento de metodologias de processamento destes filmes a temperaturas mais baixas continua a ser um aspecto chave do ponto de vista tecnológico e de comercialização destes materiais. Acrescente-se que um processamento a baixas temperaturas é ainda essencial quando é necessária a utilização de substratos metálicos ou de vidro. A presente tese descreve a investigação conduzida na preparação de filmes finos de BST por sol gel a temperaturas inferiores a 700ºC. Filmes finos de (Ba0.8Sr0.2)TiO3 (BST80/20) com propriedades melhoradas foram preparados por sol gel a 600°C, sobre substratos de Pt/TiO2/SiO2/Si, através da utilização de soles precursores difásicos. Partículas nanométricas de BST foram dispersas em soles precursores de BST e filmes finos de BST80/20 sem e com 1 mol%, 5 mol% and 10 mol% de sementes de BST foram fabricados. O papel das sementes foi investigado e analisado na formação de fases, desenvolvimento microestrutural e propriedades dieléctricas dos filmes de BST. O estudo sistemático da estrutura, microestrutura e propriedades evidenciou as melhorias das características dos filmes de BST sementados. Foi mostrado que a utilização de partículas nanométricas de BST como sementes resulta na cristalização da fase pura de perovesquite nos filmes de BST ou a temperaturas mais baixas ou para tempos mais curtos. A presença de nanopartículas de BST nos soles precursores dos filmes baixa a barreira enérgica para a nucleação da fase de perovesquite de BST e origina no filme uma densidade elevada de pequenas cristalites. As análise de difracção de raios X mostraram que a temperatura à qual a fase de perovesquite se forma decresceu de 650ºC para 550ºC quando se utilizam sementes de BST nos soles precursores e que a temperatura à qual a fase pura de perovesquite é obtida decresceu de 700ºC para 600ºC. Os filmes sementados de BST exibem uma cinética de cristalização optimizada e a energia de activação para a cristalização da fase de perovesquite foi reduzida de 189 kJ/mol para os filmes não sementados para 86 kJ/mol e 80 kJ/mol para os filmes sementados com 1 mol% e 5 mol% de sementes, respectivamente. Para caracterizar a influência das sementes na estrutura, grau de cristalinidade, microestrutura, morfologia e interface filme / substrato foram utilizadas as técnicas de microscopia electrónica de varrimento (SEM), microscopia de força atómica (AFM) e microscopia electrónica de transmissão (TEM). Os resultados da morfologia da superfície dos filmes obtidos quer por SEM quer por AFM mostraram que os grãos dos filmes sementados são claramente menores e apresentam uma distribuição mais homogénea, relativamente aos filmes não sementados. A rugosidade da superfície dos filmes quantificada por AFM decresceu por adição das sementes. As análises de TEM revelaram que a cristalinidade dos filmes sementados é superior relativamente aos filmes não sementados, para filmes preparados em idênticas condições. As propriedades dieléctricas dos filmes finos de BST, que incluem a permitividade dieléctrica relativa, a perda dieléctrica, a sintonabilidade da permitividade dieléctrica foram avaliadas e analisadas em função do teor de sementes. A permitividade dieléctrica relativa de filmes não sementados e tratados termicamente a 600ºC durante 30 horas em oxigénio variou de ~300 para 400 a 1 kHz, pela adição de 5 mol% de sementes. Simultaneamente a perda dieléctrica decresceu para os filmes com 5 mol% de sementes de ~0.1 para 0.07 a 1 kHz e de 0.07 para 0.01 a 1 MHz. A presença de sementes melhorou a sintonabilidade dos filmes de BST, verificando-se um incremento de 52% para 65% a 6 V para os filmes sementados com 5 mol% de sementes em relação aos filmes não sementados ambos tratados termicamente a 600ºC por 30 horas em oxigénio. A densidade de corrente de fuga variou de 0.88 × 10-7 A/cm2 até uma voltagem aplicada de 2.02 V (84 kV/cm) para os filmes de BST não sementados e tratados termicamente a 600ºC durante 30 horas em oxigénio, para 0.95 ×10-7 A/cm2 até uma voltagem aplicada de 2.33 V (97 kV/cm) para filmes de BST com 5 mol% de sementes preparados nas mesmas condições. Os valores de densidade de corrente de fuga dos filmes sementados cumprem os requisitos estipulados por exemplo para as memórias dinâmicas de acesso aleatório (DRAM) de capacidade da ordem de G-Bytes. De forma idêntica à restante caracterização eléctrica, a presença de sementes em filmes de BST melhorou sua a resposta histerética da variação da polarização com o campo (P-E). Foram determinados valores de polarização remanescente de 3.55 μC/cm2 com campos coercivos de 75 kV/cm para filmes com 5mol% de sementes, valores estes consideravelmente superiores aos valores determinados para filmes não sementados de 1.8 μC/cm2 e 50 kV/cm para a polarização remanescente e o campo coercivo, respectivamente. Suportando os resultados anteriores, a microscopia de força piezoeléctrica (PFM) demonstrou igualmente a melhoria das propriedades ferroléctricas dos filmes de BST preparados com sementes.
Klimek, Ľubomír. "Vývoj procesních parametrů slitiny mědi pro 3D tisk tenkostěnných struktur." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2018. http://www.nusl.cz/ntk/nusl-379039.
Повний текст джерелаChaloupka, Matyáš. "Konstrukce 3D tiskárny pro tisk materiálu s příměsí karbonových vláken." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2017. http://www.nusl.cz/ntk/nusl-318141.
Повний текст джерелаHennessey, Todd. "John Ford's 'Tis pity she's a whore." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape15/PQDD_0011/MQ31316.pdf.
Повний текст джерелаMash, C. A. "The 59 Sound : A fictional historiography of the TISH poetry movement." Thesis, University of British Columbia, 2017. http://hdl.handle.net/2429/62998.
Повний текст джерелаSamanta, Atanu. "Ab-initio Modeling and Designing of Materials for Thermoelectrics, Optoelectronics and High Temperature Applications." Thesis, 2016. https://etd.iisc.ac.in/handle/2005/4896.
Повний текст джерелаWU, PEI-I., and 吳沛宜. "Using genetic algorithms to explore the linkage among human capital, employment modes and innovation performance – Based on TIS3 database." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/g64v7h.
Повний текст джерела國立臺南大學
經營與管理學系科技管理碩士在職專班
103
Nowadays, with the advent of information age and the rapid change of market environment, enterprises are facing unprecedented competition. In order to save operation cost and integrate external resources, many companies start to try outsourcing. However, if a company wants to approach the sustainable development, employee will be the key to make it more competitive, therefore, employment pattern is an important issue for the organizational innovation performance. This research will be verified whether the human capital might do the positive effect on the organizational innovation performance, and discuss their relationships with employment pattern. In this study, we sample Third Industrial Innovation Survey in Taiwan Area (TIS3 Database), and combined with Genetic Algorithms is used to verify the hypothesis. The results show that: human capital exists the positive effects on the organizational innovation performance first. Then, a positive relationship between internal development employment pattern and organizational innovation performance is supported by manufacturing and service industries, but not financial industry. Third, a negative relationship between contracting employment pattern and organizational innovation performance is observed on the manufacturing industry, but not service and financial industries. According to the above results, this study proposes some useful suggestions on the managerial implications as well.
Tsao, Liang-Kuo, and 曹良闊. "Synthesis, Crystal Structure and Piezoelectric Properties of (Bi0.5Na0.5)TiO3-(Ba1-aSra)TiO3 System." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/04092235408252214346.
Повний текст джерела國立成功大學
資源工程學系碩博士班
95
With the raising of the environmental sense, some materials which contain harmful health elements and materials will be inhibited. For the piezoelectric materials, new lead-free piezoelectric materials with better electric properties will also be developed. (Bi0.5Na0.5)TiO3 is a excellent candidate system in lead-free piezoelectric materials system at present because of its outstanding advantage in free control atmosphere and no lead pollution. In this research, the Ba2+ and Sr2+ were both doped into this composition system via solid state reaction to synthesize (1-x)(Bi0.5Na0.5)TiO3 - x(Ba1-aSra)TiO3 solid solution system. When a is 0.05 and 0.3, the crystal structure and electric properties of the two system were studied in detail. According to the changes of the crystal structure and electric properties which resulted from the composition variation of x equal 0 to 0.12 in this research. The result show that:First, (1-x)(Bi0.5Na0.5)TiO3 - x(Ba1-aSra)TiO3 solid solution system could be synthesized successful in this research. And the relative density of sintered bulks of each composition could achieve 98% or over. Second, the phase transformation with composition variation of this system was showed in detail in this research. Besides, the cell parameters, cell volume, and theoretical density were also obtained after the Rietveld method calculation and get the displacement of atoms in the crystal structure. Third, the MPB could be calculated by tolerance factor and confirmed by the experiment result. The MPB region exists when a equal 0.05,x is 0.06 but a equal 0.3,x is 0.08. Fourth, presents the main factors which affect the dielectric properties after poling and piezoelectric coefficient are the modifiability of the displacement between cation and anion center in oxygen-octahedral structure and the existence of MPB.
Lee, Guang-jie, and 李光傑. "Study and Applications of x(Mg0.95Zn0.05)TiO3-(1-x)(Na0.5La0.5)TiO3 Microwave Dielectric Materials." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/32445604499179368983.
Повний текст джерела國立成功大學
電機工程學系碩博士班
96
The microwave properties of x(Mg0.95Zn0.05)TiO3-(1-x)Na0.5La0.5TiO3 dielectric ceramic materials have been discussed in this paper.Using positive and negative temperature coefficients would achieve zero temperature coefficient of resonant frequency. Na0.8La0.5TiO3 has dielectric properties of ~122,Q × f value ~9800 and a positive value ~ 480 ppm/℃. (Mg0.95Zn0.05)TiO3 possesses high dielectric constant ( ~17),high quality factor (Q × f ~260,000 at 9GHz) and negative value(-40 ppm/℃).By appropriately adjusting the x value in the x(Mg0.95Zn0.05)TiO3-(1-x)Na0.5La0.5TiO3 ceramic system, zero value can be achieved. The experiment results show that it has excellent dielectric properties(Q×f~103000(9GHz), ~23.39, ~1.1ppm/oC) when x value equal to 0.88. Besides, we attempt to add different sintering aids B2O3 and CuO respectively and discuss the effects of the microwave properties by various amounts of sintered aids. 0.88(Mg0.95Zn0.05)TiO3-0.12Na0.5La0.5TiO3. Finally, we design and fabricate a band-pass filter using dual-mode meader loop resonators with 2GHz center frequency on FR4、Al2O3、88MZNLT substrate respectively. And we compared with the result of the simulation and measurement.
Wang, Yen-Hsing, and 王雁興. "Dielectric Properties and Microwave Applications of x(Mg0.95Co0.05)TiO3-(1-x)(Ln0.5Na0.5)TiO3 Ceramics." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/60915369812193103183.
Повний текст джерела國立成功大學
電機工程學系碩博士班
95
The microwave dielectric properties and the microstructures of the x(Mg0.95Co0.05)TiO3-(1-x)(Ln0.5Na0.5)TiO3 ceramics were investigated(where Ln represents a lanthanide: La+3、Nd+3). (Ln0.5Na0.5)TiO3 ceramic has a high dielectric constant εr and a positive temperature coefficient of resonant frequency τf. On the other hand, (Mg0.95Co0.05)TiO3 ceramic has a high quality factor Q×f and a negative temperature coefficient of resonant frequency τf . The results show that zero τf value and excellent Q×f value and dielectric constant εr can be obtained by appropriately adjusting the x value. Finally, we add sintering aid of B2O3 to promote the material density and reduce the sintering temperature. The outcome reveals that the specimen of 0.88(Mg0.95Co0.05)TiO3-0.12(La0.5Na0.5)TiO3 with 0.5wt% B2O3 can be sintered at 1225oC and has the characteristics of εr~22.77、Q×f value~98200、and τf value~+1.83ppm/oC. Compare the material of 88MCLNT+0.5wt%B2O3 with pure material which is sintered at 1325oC, and the sintering temperature of the material of 88MCLNT+0.5wt%B2O3 was Conspicuously reduced. Otherwise, we fabricate a second order Butterworth hairpin filter using 0° feed structure on the substrates 88MCLNT+0.5wt%B2O3, FR4 and Al2O3 respectively to compare and verify that the material of 88MCLNT+0.5%B2O3 has stable temperature coefficient of resonant frequency τf, high dielectric constant εr, and excellent quality factor Q×f.
Vostruha, Matěj. "Jozef Tiso ve slovenské historiografii." Master's thesis, 2017. http://www.nusl.cz/ntk/nusl-370781.
Повний текст джерелаChen, Chao-Chun, and 陳朝俊. "Electrical Measurements on TiSi Nanowires." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/79290100723845275109.
Повний текст джерела國立交通大學
物理研究所
99
Applications of nanostructures in semiconductor industry in recent years has been towards the 22 nm manufacturing process, some materials properties of bulk and properties of nanowire are some differences, the study of nano-structural properties of these materials is an important issue. We study the basic properties and electrical transmission of TiSi nanowires, the most compounds of Ti and Si are low resistivity, high melting point and high antioxidant characteristics. The TiSi nanowires manufactured by Chiulab, Department of Applied Chemistry, National Chiao Tung University. It is the first successful production of TiSi. We used focused ion beam technology to produce nano-wire connection electrodes in two different deposition conditions, the measured two kinds of different electrical transport properties. I proved that FIB completely destroyed nanowires, and measured non-nanowire itself. We also use electron beam lithography to create electrodes confirms our inference.
Hracki, Filip. "3D tisk modelového zařízení slévárenské formy." Master's thesis, 2019. http://www.nusl.cz/ntk/nusl-428401.
Повний текст джерелаLi, Shunyi. "Grenzflächenmodifizierung kathodenzerstäubter (Ba,Sr)TiO3-Dünnschichten." Phd thesis, 2011. http://tuprints.ulb.tu-darmstadt.de/2664/2/Dissertation_Li2011.pdf.
Повний текст джерела