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Автор: Grafiati
Опубліковано: 11 вересня 2023

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1

John, K. J., B. Pradeep, and E. Mathai. "Tin selenide (SnSe) thin films prepared by reactive evaporation." Journal of Materials Science 29, no. 6 (March 1994): 1581–83. http://dx.doi.org/10.1007/bf00368929.

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2

Jeong, Giuk, Yoon Hwan Jaung, Jekyung Kim, Jae Yong Song, and Byungha Shin. "Sn1−xSe thin films with low thermal conductivity: role of stoichiometric deviation in thermal transport." Journal of Materials Chemistry C 6, no. 37 (2018): 10083–87. http://dx.doi.org/10.1039/c8tc03051k.

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3

Jakubéczyová, Dagmar, Pavol Zubko, Mária Hagarová, and Juraj Zubko. "Evaluation of Local Mechanical Properties of Thin Coatings Prepared by PVD Evaporation." Key Engineering Materials 586 (September 2013): 150–53. http://dx.doi.org/10.4028/www.scientific.net/kem.586.150.

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The contribution deals with evaluation of mechanical properties of thin hard coatings prepared by ARC evaporation on steel substrate K110. In this paper TiN and AlTiCrN are comparatively studied. The thickness of TiN and AlTiCrN coatings was evaluated using the calotest, GDOES and nanohardness was also measured. The results show that AlTiCrN coatings posses higher hardness and Young´s modulus than simple monolayer TiN coatings. The substrate-coating interface was without failures, which confirmed excellent adhesion properties of the system. Due to their specific properties, the coatings appear suitable for use in practical operations.
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4

He, Xiangjun, Si-Ze Yang, Kun Tao, and Yudian Fan. "Investigation of the interface reactions of Ti thin films with AlN substrate." Journal of Materials Research 12, no. 3 (March 1997): 846–51. http://dx.doi.org/10.1557/jmr.1997.0123.

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Анотація:
Pure bulk AlN substrates were prepared by hot-pressing to eliminate the influence of an aid-sintering substance on the interface reactions. AlN thin films were deposited on Si(111) substrates to decrease the influence of charging on the analysis of metal/AlN interfaces with x-ray photoelectron spectroscopy (XPS). Thin films of titanium were deposited on bulk AlN substrates by e-gun evaporation and ion beam assisted deposition (IBAD) and deposited on AlN films in situ by e-gun evaporation. Solid-state reaction products and reaction mechanism of the Ti/AlN system annealed at various temperatures and under IBAD were investigated by XPS, transmission electron microscopy (TEM), x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS). Ti reacted with AlN to form a laminated structure in the temperature range of 600 °C to 800 °C. The TiAl3 phase was formed adjacent to the AlN substrate, TiN, and Ti4N3−x as well as Ti2N were formed above the TiAl3 layer at the interface. Argon ion bombardment during Ti evaporation promoted the interface reactions. No reaction products were detected for the sample as-deposited by evaporation. However, XPS depth profile of the Ti/AlN/Si sample showed that Ti–N binding existed at the interface between the AlN thin films and the Ti thin films.
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5

Milinović, V., M. Milosavljević, M. Popović, M. Novaković, D. Peruško, I. Radović, and N. Bibić. "Ion Beam Assisted Deposition of TiN Thin Films on Si Substrate." Materials Science Forum 518 (July 2006): 155–60. http://dx.doi.org/10.4028/www.scientific.net/msf.518.155.

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Анотація:
In this paper we present a study of the formation of TiN thin films during the IBAD process. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incident angle, Ti evaporation rates and partial pressure of N2 on preferred orientation and resistivity of TiN layers. TiN thin films were grown by evaporation of Ti in the presence of N2 and simultaneously bombarded with Ar+ ions. Base pressure in the IBAD chamber was 1⋅10-6 mbar. The partial pressure of Ar during deposition was (3.1 – 6.6)⋅10-6 mbar and partial pressure of N2 was 6.0⋅10-6 - 1.1⋅10-5 mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to a thickness of 85 – 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy was varied from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30o. All samples were analyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profiles of titanium, nitrogen and silicon were determined with 900 keV He++ ion beam. The RBS spectra were analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD) for phase identification. The resistivity of samples was measured with four-point probe method. The results clearly show that TiN thin layer grows with (111) and (200) preferred orientation, depending on the IBAD deposition parameters. Consequently, the formation of TiN thin layers with wellcontrolled crystalline orientation occurs. Also, it was found that the variations in TiN film resistivity could be mainly attributed to the ion beam induced damage during the IBAD process.
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6

Mustapha, N., and R. P. Howson. "Optical TiN films by filtered arc evaporation." Surface and Coatings Technology 92, no. 1-2 (June 1997): 29–33. http://dx.doi.org/10.1016/s0257-8972(97)00099-6.

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7

Yao, J. L., S. Hao, and J. S. Wilkinson. "Indium tin oxide films by sequential evaporation." Thin Solid Films 189, no. 2 (August 1990): 227–33. http://dx.doi.org/10.1016/0040-6090(90)90451-i.

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8

Laghrib, Souad, Hania Amardjia-Adnani, Djamila Abdi, and Jean Marc Pelletier. "Tin oxide thin layers obtained by vacuum evaporation of tin and annealing under oxygen flow." Vacuum 82, no. 8 (April 2008): 782–88. http://dx.doi.org/10.1016/j.vacuum.2007.11.010.

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9

Noaman, Sura Ali, Rashid Owaid Kadhim, and Saleem Azara Hussain. "Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique." JOURNAL OF ADVANCES IN PHYSICS 12, no. 3 (October 30, 2016): 4394–99. http://dx.doi.org/10.24297/jap.v12i3.45.

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Анотація:
Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon substrates by thermal evaporation technique. X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape. Optical properties such as Transmission , optical band-gap have been measured and calculated.
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10

Kameneva, Anna, Vadim Karmanov, Sergey Stepanov, and Darya Kameneva. "Comparison of corrosion, physico-mechanical and wear properties of TiN, ZrN, TixZr1-xN and Ti1-xAlxN coatings." MATEC Web of Conferences 329 (2020): 02029. http://dx.doi.org/10.1051/matecconf/202032902029.

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Анотація:
In this paper, TiN, ZrN, TixZr1-xN, Ti1-xAlxN coatings were obtained by cathodic arc evaporation at optimal technological parameters. The corrosion properties of these coatings were investigated in 5% NaOH. The coating ZrN deposited by cathodic arc evaporation slows down the corrosion in the 5% NaOH by over 3,000 times, and the passive current – by 2,000 times. The TixZr1-xN coating has the best physico-mechanical properties: microhardness Н = 36 GPa, Young’s modulus Е = 312 GPa, elastic recovery We = 78 %, resistance to elastic failure strain H/E = 0.12, and resistance to plastic strain H3/E2 = 1.31 GPa. The Ti1-xAlxN coating has the best wear properties: friction coefficient 0.09, counterbody wear intensity by volume 0.43•10-8 mm3/Nm, coating wear intensity by volume 0.05•10-4 mm3/Nm and by mass•0.03•10-5 mg/Nm. Multilayer coating TiN-TixZr1-xN-Ti1-xAlxN-ZrN (ZrN-top layer) has a complex of high physico-mechanical and wear properties in 5% NaOH.
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11

Anwar, P. Mohamed, S. Muruganantham, M. Ismail Fathima, A. Ayeshamariam, S. Beer Mohamed, M. Benhaliliba, and K. Kaviyarasu. "Photoelectrochemical Efficiency Applications of Antimony-doped Tin Oxide Thin Film by Thermal Evaporation Technique." Asian Journal of Chemistry 34, no. 6 (2022): 1537–42. http://dx.doi.org/10.14233/ajchem.2022.23713.

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Анотація:
Antimony-doped tin oxide (ATO) Sb–SnO2 has been prepared by thermal evaporation technique on indium tin oxide (ITO) glass substrate. The prepared ATO thin film was characterized by X-ray diffraction technique (XRD), scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy (EDAX), UV-vis’s spectrometer, Fourier transform infrared spectroscopy (FTIR) and photoluminescence studies (PLS) at room temperature, 250 and 500 ºC. Furthermore, the as-fabricated ATO/indium tin oxide device was subjected to electrical measurements, was determined at room temperature and 500 ºC without etching, chemical etching and photoetching processes. Post-treatment, such as annealing and etching, electrochemical photocurrent results showed that the maximum photoelectrochemical performance without etching at 500 ºC of the PEC cell.
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12

G. Kunjomana, A., Bibin John, and Karthikeyan R. "Processing and Characterization of Tin Chalcogenide Thin Films by Thermal Evaporation." International Journal of Current Research and Review 10, no. 21 (2018): 46–48. http://dx.doi.org/10.31782/ijcrr.2018.4648.

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13

Vong, V. "Antimony-doped tin oxide thin films (SnOx) made by evaporation method." Acta Crystallographica Section A Foundations of Crystallography 52, a1 (August 8, 1996): C392. http://dx.doi.org/10.1107/s0108767396083845.

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14

Bentzon, M. D., and F. Kragh. "Surface coatings of TiN produced by gas evaporation." Micron and Microscopica Acta 21, no. 3 (1990): 182. http://dx.doi.org/10.1016/0739-6260(90)90090-3.

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15

Yu, Yue, Dewei Zhao, Corey R. Grice, Weiwei Meng, Changlei Wang, Weiqiang Liao, Alexander J. Cimaroli, Hongmei Zhang, Kai Zhu, and Yanfa Yan. "Thermally evaporated methylammonium tin triiodide thin films for lead-free perovskite solar cell fabrication." RSC Advances 6, no. 93 (2016): 90248–54. http://dx.doi.org/10.1039/c6ra19476a.

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16

Rafaja, David, Anna Poklad, Gerhard Schreiber, Volker Klemm, Dietrich Heger, and Michal Šíma. "On the preferred orientation in Ti1–x Al x N and Ti1–x–y Al x Si y N thin films." International Journal of Materials Research 96, no. 7 (July 1, 2005): 738–42. http://dx.doi.org/10.1515/ijmr-2005-0129.

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Анотація:
Abstract The influence of the deposition geometry and the chemical composition on the form and degree of the preferred orientation of crystallites was investigated in TiN, Ti1–x Al x N, and Ti1–x–y Al x Si y N thin films deposited by cathodic arc evaporation. The deposition geometry was varied by changing the angle between the cathodes and the substrates. The chemical composition of the thin films was modified by the choice of the cathodic materials. In TiN thin films, the crystallites were preferentially oriented with the {111} direction perpendicular to the sample surface, independent of the deposition geometry. Besides, a well-pronounced in-plane texture was observed. Co-deposition of Ti, Al, and Si in nitrogen atmosphere stimulated inclination of the texture direction towards the sample surface, which can be described as a change of the texture direction related to the sample surface perpendicular direction, and reduced the amount of the in-plane texture in the coatings (the preferred orientation of crystallites in the plane of the coating).
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17

Thi Tuyet Trinh, Mai, Hung Le Xuan, Hiep Le Thi Thanh, and Loan Le Thi Ngoc. "Synthesis and characterizations of titanium nitride nanofibers prepared using nitridation method." Vietnam Journal of Catalysis and Adsorption 9, no. 2 (July 31, 2020): 17–22. http://dx.doi.org/10.51316/jca.2020.023.

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Анотація:
In this paper, titanium nitride nanofibers (TiN NFs) were successfully synthesized by nitridation of TiO2 nanofibers, in which the TiO2 nanofibers were prepared by using electrospinning method. The XRD patterns and Raman spectra indicate that transformation of TiO2 into TiN crystalline structure was succeeded at 900oC in ammonia at flow rate of 800 sccm in 60 mins. The SEM images show no significant change in morphology, however, surface of the sample annealed at 900oC becomes rougher compared to that of TiO2 nanofibers. The UV-vis absorption spectrum of TiN illustrates a strong and broad absorption peak at 530 nm which covers entire visible part of the solar spectrum. The as-synthesized samples were used to test solar water evaporation and the results indicate that TiN nanofibers are great nano-heater sources to enhance water evaporation performance.
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18

Mahdi, O. S., and Nadheer Jassim Mohammed. "Wetting Property of Tin Nanoparticles Thin Films." Al-Mustansiriyah Journal of Science 32, no. 4 (November 20, 2021): 57–59. http://dx.doi.org/10.23851/mjs.v32i4.972.

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Thin film was formed by the method of thermal evaporation of tin. To studying the obtained thin film, we used a field emission scanning electron microscope. The resulting image is processed using the Gwyddion 2.20 program, which is used to determine the values of the contact angles of wetting with a tin of the substrate surface and the diameter of the drops. Droplet experiments were carried out to describe the wettability behavior of the textured surfaces used in this research. The clusters can take various forms, for example, a sphere or a hemisphere. We saw that the adhesion is good when the temperature is 250 C for a substrate. In addition, an important parameter at the stage of clusters is their size distribution, since it significantly affects the morphology of the film grown at the second stage.
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19

Dillich, S. A., R. A. Kant, B. D. Sartwell, J. A. Sprague, and F. A. Smidt. "The Tribological Behavior of TiN Coatings Prepared by IBAD." Journal of Tribology 113, no. 1 (January 1, 1991): 214–19. http://dx.doi.org/10.1115/1.2920592.

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Ion Beam Assisted Deposition (IBAD) provides the ability to control the micro-structure, and therefore the properties of thin films and coatings. This paper describes the tribological properties of TiN coatings prepared by reactive IBAD using evaporation of Ti from an electron beam evaporator in a 10−3 to 10−4 Pa partial pressure of nitrogen and simultaneous bombardment with a directed beam of 0.5 keV Ar+ ions. Films prepared with an Ar+ to Ti atom arrival rate ratio of 0.1 were found to be soft (Knoop hardness of < 1000 with 5 gr load) while those prepared at an arrival rate ratio of 0.4 were hard (Knoop hardness of ~2000 at 5 gr load). Transmission electron microscopy of the films showed the soft films had significant porosity at the grain boundaries while the hard films had almost none. All films were highly adherent. The wear life during pin on disk testing was a complex function of film hardness, ductility and debris formation.
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20

Gaur, Shailendra Kumar, and R. S. Mishra. "Thermal Evaporation- Modeling and Microstructure Studies of Indium and Tin Deposition." International Journal of Advance Research and Innovation 3, no. 1 (2015): 301–11. http://dx.doi.org/10.51976/ijari.311548.

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Анотація:
The present work represents the modeling of nano scale tin indium films by computing the film thickness, mass deposited on the substrate and mass transfer rate with time dependent model using BDF solver. Tin and indium is evaporated from a resistively heated evaporator source at a temperature of 1855 K and 1485 K respectively in a pressure (vacuum) of 100 Pa onto silicon surface held on a fixed surface. The film thickness varies between 144 nm to 164 nm for Tin and 164 nm to 183 nm for Indium across the sample after 60 sec of deposition, with radial symmetry about the midpoint of the source. The film thickness as well as mass deposited at a point increases linearly with time. Since the angular distribution is of particular interest in this model, by increasing the integration resolution to a maximum value for ensuring the most accurate angular resolution when computing the flux. The surface temperature is required to specifying the temperature of the evaporating tin and indium source using constant elements for turn off the refinement in the post-processing settings. The SEM micrographs of tin and indium at different magnifications shows the 100nm to 1microns grain size along the grain boundaries. Similarly, XRD analysis with Kα (wavelength 1.541874) shows the peaks of intensity at different 2θ angles for different orientations of planes with polycrystalline structure.
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21

Jain, Parveen, Sukhvir Singh, and Sandeep Kumar Pundir. "Synthesis of Highly Transparent Indium Tin Oxide Thin Films Using Vacuum Evaporation Technique." Journal of Nanoscience and Nanotechnology 20, no. 6 (June 1, 2020): 3845–53. http://dx.doi.org/10.1166/jnn.2020.17505.

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The synthesis of thin films of ITO (Indium Tin Oxide) is synthesized by thermal evaporation technique under high vacuum conditions and further annealing at different conditions of temperature. These films were further characterized by using SEM, XRD, AFM, photoluminescence spectroscopy and UV-Visible in order to understand the structural and optical properties associated with them. Parameters to synthesize uniform, homogeneous, single phase and highly transparent ITO thin films have been optimized.
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22

Rondón Almeyda, Carlos Eduardo, Monica Andrea Botero Londoño, and Rogelio Ospina Ospina. "Finite Element Analysis of An Evaporation System to Synthesize Kesterite thin Films." Revista Ingenierías Universidad de Medellín 20, no. 38 (March 15, 2021): 51–66. http://dx.doi.org/10.22395/rium.v20n38a3.

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Анотація:
Currently, there is an interest within the scientific community in thin-film solar cells with a Kesterite (Cu2ZnSnS4) type absorber layer, since they report a theoretical efficiency greater than 32 %. The synthesis of Kesterites by evaporation has allowed for efficiencies at the laboratory level of 11.6 %. Although these are good results, the design of the evaporation chamber and the distribution of the electrodes is essential to control synthesis parameters and evaporate each precursor in the corresponding stage. This project seeks to design an evaporation chamber that can achieve a vacuum of 10-5 mbar, increase the deposition surface and avoid each precursor evaporation in a non-corresponding stage. This last objective was studied using Comsol multiphysics R. (licensed product) software, with the adequate disposition of metallic precursors (zinc, copper, and tin) determined by analyzing heat distribution. It was concluded that the lower the evaporation temperature of the precursor, the smaller the height of the copper electrode in the system. This is because, with a lower height the concentration of heat in the container is lower.
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23

Dai, C. M., C. S. Su, and D. S. Chuu. "Growth of highly oriented tin oxide thin films by laser evaporation deposition." Applied Physics Letters 57, no. 18 (October 29, 1990): 1879–81. http://dx.doi.org/10.1063/1.103998.

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24

Yamaguchi, Mika, Ari Ide-Ektessabi, Hiroshi Nomura, and Nobuto Yasui. "Characteristics of indium tin oxide thin films prepared using electron beam evaporation." Thin Solid Films 447-448 (January 2004): 115–18. http://dx.doi.org/10.1016/j.tsf.2003.09.033.

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25

Lee, Ho-Nyeon, Hyung-Jung Kim, and Chang-Kyo Kim. "p-Channel Tin Monoxide Thin Film Transistor Fabricated by Vacuum Thermal Evaporation." Japanese Journal of Applied Physics 49, no. 2 (February 5, 2010): 020202. http://dx.doi.org/10.1143/jjap.49.020202.

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26

Trebukhov, S. A., V. N. Volodin, O. V. Ulanova, A. V. Nitsenko, and N. M. Burabaeva. "Thermodynamics of formation and evaporation of lead-tin alloys." Kompleksnoe ispolʹzovanie mineralʹnogo syrʹâ/Complex Use of Mineral Resources/Mineraldik shikisattardy Keshendi Paidalanu 316, no. 1 (March 15, 2021): 82–90. http://dx.doi.org/10.31643/2021/6445.10.

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Анотація:
Only a few works have been devoted to thermodynamic studies of the lead-tin system by methods including the volatile components evaporation process. When the binary system is separated into metals by distillation, the volatile component is removed from the alloy and the low-volatile component accumulates in the bottom products, that is, there are alloy composition changes over the entire concentration range. It is necessary to know the boundaries position of the melt and vapor coexistence fields on the state diagram, especially for solutions beneficiated with non-volatile metal to assess the quality of the vapor phase by the content of the low-volatile component. In this regard, the study has been completed with the purpose to clarify the values of the thermodynamic functions of the formation and evaporation of lead-tin melts required to calculate the boundaries of the liquid and vapor coexistence fields on the state diagram that enables us to judge the amount of a low-volatile component in the vapor phase under equilibrium conditions. The thermodynamic activity of lead was calculated, as well as the numerical integration of the Gibbs-Duhem equation using the substitution proposed by Darken is the thermodynamic activity and pressure of saturated tin vapor Based on the values of the saturated lead vapor pressure, determined by the boiling point method (isothermal version) for alloys predominantly of the lead edge of the phase diagram. The thermodynamic constants thus obtained will add to the base of physicochemical data and will be used to calculate the boundaries of the vapor-liquid equilibrium fields on the phase diagram, allowing to determine the possibility and completeness of the distillation separation of metals.
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27

Vispute, R. D., V. P. Godbole, S. M. Chaudhari, S. M. Kanetkar, and S. B. Ogale. "Deposition of tin oxide films by pulsed laser evaporation." Journal of Materials Research 3, no. 6 (December 1988): 1180–86. http://dx.doi.org/10.1557/jmr.1988.1180.

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Анотація:
Thin films of SnO2−x (0<x<1) were deposited on Corning glass and alumina substrates by employing a pulsed laser evaporation (PLE) technique. The microstructural features of the films were probed with Sn119 conversion electron Mössbaucr spectroscopy (CEMS) whereas the structural characteristics were identified by using low-angle x-ray diffraction measurements. The electrical and optical properties have also been studied. It is shown that films with conductivity of 3 × 102 (ohm·cm)−1 and transmission of 90% can be obtained by appropriate postannealing of the as-deposited films in air and vacuum. The energy gap of this nearly stoichiometric single-phase SnO2 film was found to be 3.5 eV and spectroscopic ellipsometry measurements indicated the refractive index lobe typically between 1.8–1.9 over the wavelength range of 400–800 nm.
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28

Payne, R. S., A. Swann, and P. J. Mills. "Thermal evaporation of tin on to softened polystyrene substrates." Journal of Materials Science 25, no. 7 (July 1990): 3133–38. http://dx.doi.org/10.1007/bf00587662.

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29

Chen, Zhi, Kaiyu Yang, and Jianqqu Wang. "Preparation of indium tin oxide films by vacuum evaporation." Thin Solid Films 162 (August 1988): 305–13. http://dx.doi.org/10.1016/0040-6090(88)90219-2.

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30

G.S. Chuah, Donald, and H. K. Fun. "A study of tin oxide film by vacuum evaporation." Materials Letters 4, no. 5-7 (July 1986): 274–78. http://dx.doi.org/10.1016/0167-577x(86)90023-6.

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31

Salehi, M., B. Janfeshan, and S. K. Sadrnezhaad. "Growth of tin oxide nanotubes by aerial carbothermal evaporation." Applied Physics A 97, no. 2 (May 9, 2009): 361–64. http://dx.doi.org/10.1007/s00339-009-5216-0.

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32

Pruna, Raquel, Manel López, and Francesc Teixidor. "Tuning the deposition parameters for optimizing the faradaic and non-faradaic electrochemical performance of nanowire array-shaped ITO electrodes prepared by electron beam evaporation." Nanoscale 11, no. 1 (2019): 276–84. http://dx.doi.org/10.1039/c8nr07908k.

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33

SHAHZAD, N., N. ALI, I. HAQ, S. W. SHAH, S. ALI, Q. S. AHMAD, F. AZLULLAH, A. KALAM, and A. G. AL-SEHEMI. "ANNEALED TIN SELENIDE (SnSe) THIN FILM MATERIAL FOR SOLAR CELL APPLICATION." Chalcogenide Letters 17, no. 7 (July 2020): 347–51. http://dx.doi.org/10.15251/cl.2020.177.347.

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Анотація:
The main theme of this work is the synthesis and characterization of SnSe thin film for photovoltaic application. 2-micron Tin Selenide thin film is deposited on clean glass substrate (4cm×4cm) by thermal evaporation technique. The sample is annealed for one hour at a temperature of 350○C . Optical characterization is achieved for the calculation of transmittance, reflection, reflection and absorbance. 1.2 eV band gap is calculated which confirmed the semiconductor nature of thin film. Relatively high resistance (5MΩ) of the sample is calculated using I-V characteristics.
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34

Reddy, N. Koteeswara, M. Devika, K. R. Gunasekhar, and E. S. R. Gopal. "Fabrication of Photovoltaic Devices Using ZnO Nanostructures and SnS Thin Films." Nano 11, no. 07 (July 2016): 1650077. http://dx.doi.org/10.1142/s1793292016500776.

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Анотація:
The development of nontoxic and cost-effective solar cell devices is one of the challenging tasks even now. With this objective, solar cell devices using tin mono sulfide (SnS) thin films and zinc oxide (ZnO) nanostructures with a superstrate configuration of ITO/ZnO film/ZnO nanorods/SnS film/Zn have been fabricated and their photovoltaic properties have been investigated. Vertically aligned ZnO nanostructures were grown on indium doped tin oxide substrate by chemical solution method and then, SnS thin films were deposited by thermal evaporation method. A typical solar cell device exhibited significant light conversion efficiency with an open circuit voltage and short circuit current of 350[Formula: see text]mV and 5.14[Formula: see text]mA, respectively.
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35

Metel, Alexander, Sergey Grigoriev, Yury Melnik, Marina Volosova, and Enver Mustafaev. "Surface Hardening of Machine Parts Using Nitriding and TiN Coating Deposition in Glow Discharge." Machines 8, no. 3 (July 24, 2020): 42. http://dx.doi.org/10.3390/machines8030042.

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Анотація:
Surface hardening of machine parts substantially improves their performance. The best results are obtained when combined hardening consists of surface nitriding and subsequent deposition of hard coatings. The nitriding of machine parts immersed in the plasma of glow coatings have been studied, and the study results are presented. Titanium atoms for coating synthesis are obtained via titanium evaporation in a hollow molybdenum anode of the discharge. Stable evaporation of titanium occurs only when the power density of electrons heating the liquid titanium does not exceed ~500 W/cm2. To start evaporation, it is only necessary to reduce the gas pressure to 0.02 Pa. To stop evaporation, it is enough to increase the gas pressure to 0.1 Pa. Fast argon and nitrogen atoms used for cleaning the machine parts, heating them, and bombarding the growing coating are obtained using a grid composed of plane-parallel plates under high negative voltage and immersed in plasma.
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36

Reddy, Tippasani Srinivasa, and M. C. Santhosh Kumar. "Influence of Substrate Temperature on Structural and Optical Properties of Co-Evaporated Cu<sub>2</sub>SnS<sub>3</sub>/ITO Thin Films." Materials Science Forum 1048 (January 4, 2022): 189–97. http://dx.doi.org/10.4028/www.scientific.net/msf.1048.189.

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In this study report the structural and optical properties of Copper Tin Sulfide (Cu2SnS3) thin films on indium tin oxide (ITO) substrate using co-evaporation technique. High purity of copper, tin and sulfur were taken as source materials to deposit Cu2SnS3 (CTS) thin films at different substrate temperatures (200-350 °C). Further, the effect of different substrate temperature on the crystallographic, morphological and optical properties of CTS thin films was investigated. The deposited CTS thin films shows tetragonal phase with preferential orientation along (112) plane confirmed by X-ray diffraction. Micro-Raman studies reveled the formation of CTS thin films. The surface morphology, average grain size and rms values of the deposited films are examined by Scanning electron spectroscopy (SEM) and Atomic Force Microscopy (AFM). The Energy dispersive spectroscopy (EDS) shows the presence of copper, tin and sulfur with a nearly stoichiometric ratio. The optical band gap (1.76-1.63 eV) and absorption coefficient (~105 cm-1) of the films was calculated by using UV-Vis-NIR spectroscopy. The values of refractive index, extinction coefficient and permittivity of the deposited films were calculated from the optical transmittance data.
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37

Kumar, Rajesh, and Swati Chawla. "Optical, Structural and Gas Sensing Studies on Tin Oxide Thin Films." Asian Journal of Chemistry 31, no. 8 (June 28, 2019): 1805–8. http://dx.doi.org/10.14233/ajchem.2019.22054.

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Анотація:
In this paper, pure and copper doped tin oxide thin films were grown on glass substrates by thermal evaporation technique for gas sensing applications. Optical, structural and gas sensing properties were investigated for their application for gas sensing applications. The thickness of the samples was kept about 300 nm. The films were annealed at 400 ºC for 4 h in the presence of air. The gas sensing studies were carried out for hydrogen sulphide and ethanol gas. The sensitivity was quite high for hydrogen sulphide gas but little sensitivity towards hydrocarbon gases.
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38

Casey, V., and M. I. Stephenson. "The Preparation and Properties of Tin Oxide Thin Films Deposited by Reactive Evaporation." Key Engineering Materials 72-74 (January 1992): 417–24. http://dx.doi.org/10.4028/www.scientific.net/kem.72-74.417.

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39

Kuo, Chia-Tung, Yu-Ying Chu, Han-Yi Chen, and Tri-Rung Yew. "Tin-manganese-nickel oxide thin films prepared by thermal evaporation for photosensor applications." Materials Science and Engineering: B 268 (June 2021): 115126. http://dx.doi.org/10.1016/j.mseb.2021.115126.

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40

Jain, Parveen, Sukhvir Singh, Azher Majid Siddqui, and Avanish Kumar Srivastava. "Tin Oxide Thin Films Prepared by Thermal Evaporation Technique Under Different Vacuum Conditions." Advanced Science, Engineering and Medicine 4, no. 3 (June 1, 2012): 230–36. http://dx.doi.org/10.1166/asem.2012.1177.

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41

Indirajith, R., T. P. Srinivasan, K. Ramamurthi, and R. Gopalakrishnan. "Synthesis, deposition and characterization of tin selenide thin films by thermal evaporation technique." Current Applied Physics 10, no. 6 (November 2010): 1402–6. http://dx.doi.org/10.1016/j.cap.2010.05.002.

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42

Wan Mustapha, Wan Normiza, S. A. Rezan Sheikh Abdul Hamid, Sabar Derita Hutagalung, Nguyen Van Hieu, Khairudin Mohamed, and Chan Kok You. "Synthesis and Gas Sensing Properties of SnO2 Nanostructures by Thermal Evaporation." Advanced Materials Research 620 (December 2012): 350–55. http://dx.doi.org/10.4028/www.scientific.net/amr.620.350.

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Tin oxide nanostructures (NS) were grown on silicon substrates by thermal evaporation method with three different parameters. These parameters were temperatures (650 °C, 750 °C and 850 °C), nickel catalyst concentrations (0, 5 and 10 milimoles) and tin powder source to substrate distances (2 cm, 4 cm and 6 cm). The parameters were found to affect the size and morphology of the synthesized nanostructures. Formation of nanospheres (NSs), nanoneedles (NNs) and nanowires (NWs) of tin oxide were observed by Scanning Electron Microscope (SEM) at different synthesis conditions. Synthesis temperature was found to have most pronounced effect on the size and morphology of the nanostructures. Catalyst concentration has affected the porosity and growth of the nanostructures. The distance between source and substrate affected the nanostructures predominately on distribution and particle size. Energy dispersion X-ray (EDX) analysis confirms the presence of tin and oxygen in all nanostructures at all synthesis conditions. X-ray diffraction (XRD) proves the formation of tin oxide phase in all samples. Significant formation of tin oxide nanowires was observed at 850 °C. Gas sensing properties of SnO2 nanowires (NW) toward ethanol (C2H5OH) gas at 450°C with different volume concentration was measured. It was found SnO2 NW had good sensing properties for C2H5OH at 100 ppm compared to measurements made at 25-50 ppm.
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43

Tian, Jun, and Zi Qiong Shi. "PVD Preparation Process of (TiN + CrN) / CrAlN Superhard Nanocomposite Multilayer Coatings." Advanced Materials Research 568 (September 2012): 368–71. http://dx.doi.org/10.4028/www.scientific.net/amr.568.368.

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Анотація:
In this study, multi-source multi-target evaporation-sputtering PVD technology to prepare (TiN + CrN) / CrAlN nanocomposite multilayers, accurate modulation of the composition and structure of the coating can effectively reduce the stress in the coating in order to achieve (TiN + CrN) / CrAlN nano-composite multilayer dielectric films optimized design, to reach a good overall performance. (TiN + CrN) / CrAlN superhard nanocomposite multilayer coatings on the surface of tools and molds with carbide and high-speed tool steel materials, followed by the TiN film; (TiN + CrN) film, in the TiN relative content in the layer accounted for 55-65% , CrN relative content for 35-45%; gradient (CrxAl1-x) N-film, x = 0-0.5; structure of TiN / (TiN + CrN) / CrAlN superhardnano-composite multi-layer coating.
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44

Hasan, Bushra A. "Electrical and morphological study of thermally evaporated (Sb2S3)1-xSnx thin films." Iraqi Journal of Physics (IJP) 13, no. 26 (February 10, 2019): 42–50. http://dx.doi.org/10.30723/ijp.v13i26.282.

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Анотація:
(Sb2S3)1-xSnx thin films with different concentrations (0, 0.05 and0.15) and thicknesses (300,500 and 700nm) have been deposited bysingle source vacuum thermal evaporation onto glass substrates atambient temperature to study the effect of tin content, thickness andon its structural morphology, and electrical properties. AFM studyrevealed that microstructure parameters such as crystallite size, androughness found to depend upon deposition conditions. The DCconductivity of the vacuum evaporated (Sb2S3)1-x Snx thin films wasmeasured in the temperature range (293-473)K and was found toincrease on order of magnitude with increase of thickness, and tincontent. The plot of conductivity with reciprocal temperaturesuggests, there are three activation energies Ea1, Ea2 and Ea3 for(Sb2S3)1-x Snx for all x content values and thicknesses whichdecreases with increasing tin content and thickness. Hall effectmeasurement showed that low thickness (Sb2S3)1-x Snx film exhibitn-type conductance whereas the film exhibit p-type towards thehigher thickness. The electric carrier concentration and mobilityshow opposite dependence upon tin content and thickness.
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45

Rakesh Kumar, R., K. Narasimha Rao, K. Rajanna, and A. R. Phani. "Growth Of Tin Catalyzed Silicon Nanowires By Electron Beam Evaporation." Advanced Materials Letters 4, no. 11 (November 1, 2013): 836–40. http://dx.doi.org/10.5185/amlett.2013.3449.

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46

Shukla, S., V. Venkatachalapathy, and S. Seal. "Thermal Evaporation Processing of Nano and Submicron Tin Oxide Rods." Journal of Physical Chemistry B 110, no. 23 (June 2006): 11210–16. http://dx.doi.org/10.1021/jp061009b.

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47

Bendavid, A., P. J. Martin, R. P. Netterfield, and T. J. Kinder. "The properties of TiN films deposited by filtered arc evaporation." Surface and Coatings Technology 70, no. 1 (November 1994): 97–106. http://dx.doi.org/10.1016/0257-8972(94)90080-9.

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48

Steinmann, Vera, R. Jaramillo, Katy Hartman, Rupak Chakraborty, Riley E. Brandt, Jeremy R. Poindexter, Yun Seog Lee, et al. "3.88% Efficient Tin Sulfide Solar Cells using Congruent Thermal Evaporation." Advanced Materials 26, no. 44 (August 20, 2014): 7488–92. http://dx.doi.org/10.1002/adma.201402219.

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49

Fu, L., and X. Pan. "Transmission Electron Microscopy Studies of Tin Oxide Thin Films Grown on the Sapphire Substrate." Microscopy and Microanalysis 4, S2 (July 1998): 622–23. http://dx.doi.org/10.1017/s1431927600023230.

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Tin dioxide (SnO2) with rutile type structure exhibits unique electronic and optical properties. In applications of this material as gas sensors, a film-type of SnO2 provides high ratio of surface area to volume and lead to high sensitivity and fast responses. It has been found that substrate material, deposition conditions, and annealing procedure may directly control the microstructure of thin films, hence control gas-sensing properties. In this paper, we present transmission electron microscopy (TEM) studies of the microstructure and crystal defects of tin oxide thin films on sapphire substrate with subsequent annealing at high temperatures.Tin oxide thin films were deposited on the surface of sapphire by e-beam evaporation of high purity SnO2 (99.999%) at 350°C followed by annealing in air at 600°C - 700°C. Microstructures of the films were characterized by X-ray diffraction (XRD) and TEM techniques.
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50

MUBARAK, ALI, ESAH BINTI HAMZAH, MOHD RADZI HJ MOHD TOFF, and ABDUL HAKIM BIN HASHIM. "THE EFFECT OF NITROGEN GAS FLOW RATE ON THE PROPERTIES OF TiN-COATED HIGH-SPEED STEEL (HSS) USING CATHODIC ARC EVAPORATION PHYSICAL VAPOR DEPOSITION (PVD) TECHNIQUE." Surface Review and Letters 12, no. 04 (August 2005): 631–43. http://dx.doi.org/10.1142/s0218625x05007542.

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Cathodic arc evaporation (CAE) is a widely-used technique for generating highly ionized plasma from which hard and wear resistant physical vapor deposition (PVD) coatings can be deposited. A major drawback of this technique is the emission of micrometer-sized droplets of cathode material from the arc spot, which are commonly referred to as "macroparticles." In present study, titanium nitride ( TiN ) coatings on high-speed steel (HSS) coupons were produced with a cathodic arc evaporation technique. We studied and discussed the effect of various nitrogen gas flow rates on microstructural and mechanical properties of TiN -coated HSS coupons. The coating properties investigated in this work included the surface morphology, thickness of deposited coating, adhesion between the coating and substrate, coating composition, coating crystallography, hardness and surface characterization using a field emission scanning electron microscope (FE-SEM) with energy dispersive X-ray (EDX), X-ray diffraction (XRD) with glazing incidence angle (GIA) technique, scratch tester, hardness testing machine, surface roughness tester, and atomic force microscope (AFM). An increase in the nitrogen gas flow rate showed decrease in the formation of macro-droplets in CAE PVD technique. During XRD-GIA studies, it was observed that by increasing the nitrogen gas flow rate, the main peak [1,1,1] shifted toward the lower angular position. Surface roughness decreased with an increase in nitrogen gas flow rate but was higher than the uncoated polished sample. Microhardness of TiN -coated HSS coupons showed more than two times increase in hardness than the uncoated one. Scratch tester results showed good adhesion between the coating material and substrate. Considerable improvement in the properties of TiN -deposited thin films was achieved by the strict control of all operational steps.
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