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Добірка наукової літератури з теми "TIN EVAPORATION"

Автор: Grafiati
Опубліковано: 11 вересня 2023

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Статті в журналах з теми "TIN EVAPORATION"

1

John, K. J., B. Pradeep, and E. Mathai. "Tin selenide (SnSe) thin films prepared by reactive evaporation." Journal of Materials Science 29, no. 6 (March 1994): 1581–83. http://dx.doi.org/10.1007/bf00368929.

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2

Jeong, Giuk, Yoon Hwan Jaung, Jekyung Kim, Jae Yong Song, and Byungha Shin. "Sn1−xSe thin films with low thermal conductivity: role of stoichiometric deviation in thermal transport." Journal of Materials Chemistry C 6, no. 37 (2018): 10083–87. http://dx.doi.org/10.1039/c8tc03051k.

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3

Jakubéczyová, Dagmar, Pavol Zubko, Mária Hagarová, and Juraj Zubko. "Evaluation of Local Mechanical Properties of Thin Coatings Prepared by PVD Evaporation." Key Engineering Materials 586 (September 2013): 150–53. http://dx.doi.org/10.4028/www.scientific.net/kem.586.150.

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The contribution deals with evaluation of mechanical properties of thin hard coatings prepared by ARC evaporation on steel substrate K110. In this paper TiN and AlTiCrN are comparatively studied. The thickness of TiN and AlTiCrN coatings was evaluated using the calotest, GDOES and nanohardness was also measured. The results show that AlTiCrN coatings posses higher hardness and Young´s modulus than simple monolayer TiN coatings. The substrate-coating interface was without failures, which confirmed excellent adhesion properties of the system. Due to their specific properties, the coatings appear suitable for use in practical operations.
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4

He, Xiangjun, Si-Ze Yang, Kun Tao, and Yudian Fan. "Investigation of the interface reactions of Ti thin films with AlN substrate." Journal of Materials Research 12, no. 3 (March 1997): 846–51. http://dx.doi.org/10.1557/jmr.1997.0123.

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Анотація:
Pure bulk AlN substrates were prepared by hot-pressing to eliminate the influence of an aid-sintering substance on the interface reactions. AlN thin films were deposited on Si(111) substrates to decrease the influence of charging on the analysis of metal/AlN interfaces with x-ray photoelectron spectroscopy (XPS). Thin films of titanium were deposited on bulk AlN substrates by e-gun evaporation and ion beam assisted deposition (IBAD) and deposited on AlN films in situ by e-gun evaporation. Solid-state reaction products and reaction mechanism of the Ti/AlN system annealed at various temperatures and under IBAD were investigated by XPS, transmission electron microscopy (TEM), x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS). Ti reacted with AlN to form a laminated structure in the temperature range of 600 °C to 800 °C. The TiAl3 phase was formed adjacent to the AlN substrate, TiN, and Ti4N3−x as well as Ti2N were formed above the TiAl3 layer at the interface. Argon ion bombardment during Ti evaporation promoted the interface reactions. No reaction products were detected for the sample as-deposited by evaporation. However, XPS depth profile of the Ti/AlN/Si sample showed that Ti–N binding existed at the interface between the AlN thin films and the Ti thin films.
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5

Milinović, V., M. Milosavljević, M. Popović, M. Novaković, D. Peruško, I. Radović, and N. Bibić. "Ion Beam Assisted Deposition of TiN Thin Films on Si Substrate." Materials Science Forum 518 (July 2006): 155–60. http://dx.doi.org/10.4028/www.scientific.net/msf.518.155.

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Анотація:
In this paper we present a study of the formation of TiN thin films during the IBAD process. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incident angle, Ti evaporation rates and partial pressure of N2 on preferred orientation and resistivity of TiN layers. TiN thin films were grown by evaporation of Ti in the presence of N2 and simultaneously bombarded with Ar+ ions. Base pressure in the IBAD chamber was 1⋅10-6 mbar. The partial pressure of Ar during deposition was (3.1 – 6.6)⋅10-6 mbar and partial pressure of N2 was 6.0⋅10-6 - 1.1⋅10-5 mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to a thickness of 85 – 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy was varied from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30o. All samples were analyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profiles of titanium, nitrogen and silicon were determined with 900 keV He++ ion beam. The RBS spectra were analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD) for phase identification. The resistivity of samples was measured with four-point probe method. The results clearly show that TiN thin layer grows with (111) and (200) preferred orientation, depending on the IBAD deposition parameters. Consequently, the formation of TiN thin layers with wellcontrolled crystalline orientation occurs. Also, it was found that the variations in TiN film resistivity could be mainly attributed to the ion beam induced damage during the IBAD process.
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6

Mustapha, N., and R. P. Howson. "Optical TiN films by filtered arc evaporation." Surface and Coatings Technology 92, no. 1-2 (June 1997): 29–33. http://dx.doi.org/10.1016/s0257-8972(97)00099-6.

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7

Yao, J. L., S. Hao, and J. S. Wilkinson. "Indium tin oxide films by sequential evaporation." Thin Solid Films 189, no. 2 (August 1990): 227–33. http://dx.doi.org/10.1016/0040-6090(90)90451-i.

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8

Laghrib, Souad, Hania Amardjia-Adnani, Djamila Abdi, and Jean Marc Pelletier. "Tin oxide thin layers obtained by vacuum evaporation of tin and annealing under oxygen flow." Vacuum 82, no. 8 (April 2008): 782–88. http://dx.doi.org/10.1016/j.vacuum.2007.11.010.

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9

Noaman, Sura Ali, Rashid Owaid Kadhim, and Saleem Azara Hussain. "Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique." JOURNAL OF ADVANCES IN PHYSICS 12, no. 3 (October 30, 2016): 4394–99. http://dx.doi.org/10.24297/jap.v12i3.45.

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Анотація:
Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon substrates by thermal evaporation technique. X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape. Optical properties such as Transmission , optical band-gap have been measured and calculated.
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10

Kameneva, Anna, Vadim Karmanov, Sergey Stepanov, and Darya Kameneva. "Comparison of corrosion, physico-mechanical and wear properties of TiN, ZrN, TixZr1-xN and Ti1-xAlxN coatings." MATEC Web of Conferences 329 (2020): 02029. http://dx.doi.org/10.1051/matecconf/202032902029.

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Анотація:
In this paper, TiN, ZrN, TixZr1-xN, Ti1-xAlxN coatings were obtained by cathodic arc evaporation at optimal technological parameters. The corrosion properties of these coatings were investigated in 5% NaOH. The coating ZrN deposited by cathodic arc evaporation slows down the corrosion in the 5% NaOH by over 3,000 times, and the passive current – by 2,000 times. The TixZr1-xN coating has the best physico-mechanical properties: microhardness Н = 36 GPa, Young’s modulus Е = 312 GPa, elastic recovery We = 78 %, resistance to elastic failure strain H/E = 0.12, and resistance to plastic strain H3/E2 = 1.31 GPa. The Ti1-xAlxN coating has the best wear properties: friction coefficient 0.09, counterbody wear intensity by volume 0.43•10-8 mm3/Nm, coating wear intensity by volume 0.05•10-4 mm3/Nm and by mass•0.03•10-5 mg/Nm. Multilayer coating TiN-TixZr1-xN-Ti1-xAlxN-ZrN (ZrN-top layer) has a complex of high physico-mechanical and wear properties in 5% NaOH.
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Більше джерел

Дисертації з теми "TIN EVAPORATION"

1

Maciel, Júnior Jorge Luiz Barbosa. "Investigação de propriedades de filmes finos de Sn'O IND. 2' e 'Al IND. 2''O IND. 3' para aplicação em dispositivos /." Bauru : [s.n.], 2010. http://hdl.handle.net/11449/88456.

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Анотація:
Orientador: Luis Vicente de Andrade Scalvi
Banca: Margarida Juri Saeki
Banca: Tomaz Catunda
O Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi da Unesp
Resumo: A proposta deste trabalho é a investigação das propriedades elétricas e ópticas de filmes finos de dióxido de estanho (Sn'O IND. 2') obtidos via sol-gel e por solução alcoólica depositados via dip-coating, e, filmes de alumina ('Al IND. 2''O IND. 3') obtidos por deposição de filmes de alumínio (Al) via evaporação resistiva e tratamento térmico em diferentes ambientes, para promover a oxidação de Al. A investigação individual quanto às propriedades ópticas e elétricas desses materiais conhecer seu comportamento na forma de filmes, e estudar a região interfacial de Sn'O IND. 2' e 'Al IND. 2''O IND. 3'. As caracterizações estruturais dos filmes foram feitas por difração de raios-X (DRX), e, no caso dos filmes de alumina, utilizou-se também microscopia eletrônica de varredura (MEV) e microscopia óptica. Nas caracterizações ópticas foram utilizadas técnicas de espectroscopia na região do ultravioleta e no infravermelho próximo (UV-Vis-Nir). Tanto os filmes obtidos por meio alcoólico como obtidos via SGDC foram caracterizados como sendo de Sn'O IND. 2' de estrutura tetragonal do tipo rutilo, sendo que os filmes obtidos via processo alcoólico apresentaram condutividade elétrica maior do que os filmes obtidos via SGDC. Os resultados referentes aos filmes finos de alumínio indicam que independentemente da quantidade de camadas de alumínio depositadas e da atmosfera de tratamento térmico, tem-se a oxidação do alumínio à alumina ('Al IND. 2''O IND. 3'), sendo que a estrutura dominante depende da atmosfera de tratamento. A sua utilização como camada isolante no gate em dispositivo metal-óxido-semicondutor é viável, pois a corrente fonte-dreno apresenta valores significativamente maiores do que a corrente fonte-gate.
Abstract: The main goal of this work is the investigation of properties of tin dioxide (Sn'O IND. 2') and alumina ('Al IND. 2''O IND. 3) thin films. The first one was obtained through the sol-gel process as well as alcoholic solution, via dip-coating. The alumina thin films were obtained by resistive evaporation of aluminum (Al) followed by thermal annealing in distinct atmospheres, to promote the Al oxidation. The individual investigation of optical and electrical properties of these materials aims the knowledge of their behavior as thin films, which allows studying the interface layer of the heterojunction Sn'O IND. 2' e 'Al IND. 2''O IND. 3'. Structural characterization of films was carried out by X-ray diffraction (XRD) technique and particularly on the alumina films, scanning electron microscopy (SEM) and optical microscopy were done. For the optical characterization, wide spectra were obtained, with spectroscopy from ultraviolet to near infrared (UV-Vis-Nir). Either the films obtained in the alcoholic solution as well as via SGDC, where characterized as Sn'O IND. 2' of tetragonal structure of rutile type, and the films obtained through alcoholic process present electrical conductivity higher than the films obtained via SGDC. Results on aluminum thin films indicate that independent on the amount of deposited aluminum and thermal annealing atmosphere, the oxidation of aluminum to alumina ('Al IND. 2''O IND. 3) takes place, but the dominant alumina structure depends on the thermal annealing atmosphere. Besides, its utilization as insulating layer at the gate of a metal-oxide semicondutor device is achievable, because the source-drain current is significantly higher than the source-gate current.
Mestre
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2

Maciel, Júnior Jorge Luiz Barbosa [UNESP]. "Investigação de propriedades de filmes finos de Sn'O IND. 2' e 'Al IND. 2''O IND. 3' para aplicação em dispositivos." Universidade Estadual Paulista (UNESP), 2010. http://hdl.handle.net/11449/88456.

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Анотація:
Made available in DSpace on 2014-06-11T19:23:29Z (GMT). No. of bitstreams: 0 Previous issue date: 2010-02-18Bitstream added on 2014-06-13T19:09:17Z : No. of bitstreams: 1 macieljunior_jlb_me_bauru.pdf: 1682253 bytes, checksum: a84fdbae9148badab55fa6a6aa5a53c3 (MD5)
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
A proposta deste trabalho é a investigação das propriedades elétricas e ópticas de filmes finos de dióxido de estanho (Sn'O IND. 2') obtidos via sol-gel e por solução alcoólica depositados via dip-coating, e, filmes de alumina ('Al IND. 2''O IND. 3') obtidos por deposição de filmes de alumínio (Al) via evaporação resistiva e tratamento térmico em diferentes ambientes, para promover a oxidação de Al. A investigação individual quanto às propriedades ópticas e elétricas desses materiais conhecer seu comportamento na forma de filmes, e estudar a região interfacial de Sn'O IND. 2' e 'Al IND. 2''O IND. 3'. As caracterizações estruturais dos filmes foram feitas por difração de raios-X (DRX), e, no caso dos filmes de alumina, utilizou-se também microscopia eletrônica de varredura (MEV) e microscopia óptica. Nas caracterizações ópticas foram utilizadas técnicas de espectroscopia na região do ultravioleta e no infravermelho próximo (UV-Vis-Nir). Tanto os filmes obtidos por meio alcoólico como obtidos via SGDC foram caracterizados como sendo de Sn'O IND. 2' de estrutura tetragonal do tipo rutilo, sendo que os filmes obtidos via processo alcoólico apresentaram condutividade elétrica maior do que os filmes obtidos via SGDC. Os resultados referentes aos filmes finos de alumínio indicam que independentemente da quantidade de camadas de alumínio depositadas e da atmosfera de tratamento térmico, tem-se a oxidação do alumínio à alumina ('Al IND. 2''O IND. 3'), sendo que a estrutura dominante depende da atmosfera de tratamento. A sua utilização como camada isolante no gate em dispositivo metal-óxido-semicondutor é viável, pois a corrente fonte-dreno apresenta valores significativamente maiores do que a corrente fonte-gate.
The main goal of this work is the investigation of properties of tin dioxide (Sn'O IND. 2') and alumina ('Al IND. 2''O IND. 3) thin films. The first one was obtained through the sol-gel process as well as alcoholic solution, via dip-coating. The alumina thin films were obtained by resistive evaporation of aluminum (Al) followed by thermal annealing in distinct atmospheres, to promote the Al oxidation. The individual investigation of optical and electrical properties of these materials aims the knowledge of their behavior as thin films, which allows studying the interface layer of the heterojunction Sn'O IND. 2' e 'Al IND. 2''O IND. 3'. Structural characterization of films was carried out by X-ray diffraction (XRD) technique and particularly on the alumina films, scanning electron microscopy (SEM) and optical microscopy were done. For the optical characterization, wide spectra were obtained, with spectroscopy from ultraviolet to near infrared (UV-Vis-Nir). Either the films obtained in the alcoholic solution as well as via SGDC, where characterized as Sn'O IND. 2' of tetragonal structure of rutile type, and the films obtained through alcoholic process present electrical conductivity higher than the films obtained via SGDC. Results on aluminum thin films indicate that independent on the amount of deposited aluminum and thermal annealing atmosphere, the oxidation of aluminum to alumina ('Al IND. 2''O IND. 3) takes place, but the dominant alumina structure depends on the thermal annealing atmosphere. Besides, its utilization as insulating layer at the gate of a metal-oxide semicondutor device is achievable, because the source-drain current is significantly higher than the source-gate current.
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3

Hild, Florent. "Étude de la structure et des propriétés optiques de couches minces d’oxydes d’étain dopés avec des terres rares (Ce, Tb, Yb)." Thesis, Université de Lorraine, 2016. http://www.theses.fr/2016LORR0294/document.

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Анотація:
Ce travail de thèse concerne l’élaboration et la caractérisation structurale de couches minces d’oxyde d’étain dopées avec des terres rares ainsi que l’étude de leurs propriétés de photoluminescence. Les couches sont dopées avec du cérium, du terbium ou de l’ytterbium. Les films sont élaborés par évaporation sous vide d’une poudre de SnO2 sur un substrat de silicium monocristallin, et nécessitent un recuit post-dépôt à 600°C à l’air pour cristalliser en phase SnO2 de type rutile. Dans une première partie du travail a consisté caractériser le matériau non dopé. La caractérisation microstructurale a révélé qu’une oxydation du substrat conduisant à une réaction entre l’oxyde d’étain et le silicium avait lieu, conduisant à une microstructure complexe. Afin de limiter les interactions chimiques, des substrats recouverts de silice thermique ont également été utilisées. Les films non dopés présentent des propriétés de luminescence, mise en évidence et discutées en lien avec la microstructure. Pour les films dopés, l’étude structurale a mis en évidence la cristallisation d’une seconde phase de SnO2 de type orthorhombique. Une étude approfondie en STEM-EELS a permis de localiser les ions de terre rare dans la couche. Enfin les propriétés de luminescence des terres rares ont été étudiées en fonction de leur concentration dans le film et de la température de recuit. Après des recuits à 700°C, les couches dopées au Tb émettent intensément dans le vert à température ambiante, ce qui pourrait être intéressant pour le développement de diodes vertes à base de SnO2
This thesis concerns the structural characterization and the photoluminescence properties of tin oxide thin films doped with rare earths. The films are doped with cerium, terbium and ytterbium. The films were obtained by evaporation of SnO2 on silicon substrates. The as-deposited films were sub-stoichiometric and the films were then annealed in air at 600°C to reach rutile phase. The microstructural study reveals a substrate oxidation leading to a chemical reaction between tin oxide and silicon, and a complex microstructure. To limit the chemical interaction during annealing, silicon substrate coated with thermal silica were used. Undoped films show a broad luminescent band, which is discussed and linked with the microstructure. On the other hand, the structural study of doped films demonstrated the crystallization of a second phase of SnO2, which is orthorhombic. A STEM-EELS study allow to localize the rare earths ions in the films. Finally, the luminescence properties of the rare earths were study with respect to their concentration and the temperature of annealing. After annealing at 700°C, the Tb-doped films emit intensively in the green region, which might be of interest for the development of SnO2-based green light emitting diodes
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4

Mustapha, Nazir Mohamad. "Reactive filtered arc evaporation." Thesis, Loughborough University, 1993. https://dspace.lboro.ac.uk/2134/26797.

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Анотація:
Conventional physical vapour deposition (PVD) techniques usually result in films of lower quality than the corresponding bulk material. A major problem with PVD films is the presence of columns and voids throughout the thickness of the film. The films may have a low packing density, low micro-hardness and in many cases poor adhesion to the substrate. Many of these problems are a direct consequence of the low energy of the depositing atoms arriving at the substrate during film growth. The resulting film porosity gives rise to a reduction in mechanical strength, and in the case of dielectric optical films, a reduction in the refractive index. The properties of deposited films are greatly improved when the substrate or the growing film is bombarded with more energetic particles. An ideal deposition process requires a high flux of film atoms with an energy of approximately 5-50 eV in order to achieve sufficient surface mobility at the substrate to overcome columnar growth.
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5

Narayanan, Shankar. "Gas assisted thin-film evaporation from confined spaces." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42780.

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Анотація:
A novel cooling mechanism based on evaporation of thin liquid films is presented for thermal management of confined heat sources, such as microprocessor hotspots. The underlying idea involves utilization of thin nanoporous membranes for maintaining microscopically thin liquid films by capillary action, while providing a pathway for the vapor generated due to evaporation at the liquid-vapor interface. The vapor generated by evaporation is continuously removed by using a dry sweeping gas keeping the membrane outlet dry. This thesis presents a detailed theoretical, computational and experimental investigation of the heat and mass transfer mechanisms that result in dissipating heat. Performance analysis of this cooling mechanism demonstrates heat fluxes over 600W/cm2 for sufficiently thin membrane and film thicknesses (~1-5µm) and by using air jet impingement for advection of vapor from the membrane surface. Based on the results from this performance analysis, a monolithic micro-fluidic device is designed and fabricated incorporating micro and nanoscale features. This MEMS/NEMS device serves multiple functionalities of hotspot simulation, temperature sensing, and evaporative cooling. Subsequent experimental investigations using this microfluidic device demonstrate heat fluxes in excess of 600W/cm2 at 90 C using water as the evaporating coolant. In order to further enhance the device performance, a comprehensive theoretical and computational analysis of heat and mass transfer at micro and nanoscales is carried out. Since the coolant is confined using a nanoporous membrane, a detailed study of evaporation inside a nanoscale cylindrical pore is performed. The continuum analysis of water confined within a cylindrical nanopore determines the effect of electrostatic interaction and Van der Waals forces in addition to capillarity on the interfacial transport characteristics during evaporation. The detailed analysis demonstrates that the effective thermal resistance offered by the interface is negligible in comparison to the thermal resistance due to the thin film and vapor advection. In order to determine the factors limiting the performance of the MEMS device on a micro-scale, a device-level detailed computational analysis of heat and mass transfer is carried out, which is supported by experimental investigation. Identifying the contribution of various simultaneously occurring cooling mechanisms at different operating conditions, this analysis proposes utilization of hydrophilic membranes for maintaining very thin liquid films and further enhancement in vapor advection at the membrane outlet to achieve higher heat fluxes.
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6

Au, Daniel Tak Yin. "Evaporation cast thin film carbon nanotube strain gauges." Thesis, University of British Columbia, 2013. http://hdl.handle.net/2429/44860.

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Анотація:
This work describes the research performed on synthesising and measuring the gauge factor of evaporation cast thin film carbon nanotube strain gauges. The main characteristics pursued of the strain gauges are inexpensive, easily manufactured and reasonably sensitive. Carbon nanotubes have exhibited a high gauge factor due to their intrinsic piezoresistivity and were incorporated into evaporation cast films to try to take advantage of the high sensitivity. Another direction taken to improve the sensitivity is alignment of carbon nanotubes in the thin film. Previous work produced an evaporation cast carbon nanotube strain gauge with a relatively high gauge factor. However, it was not reproducible and the research encompassed extends from the previous work. A number of ink compositions with different carbon nanotube and surfactant loadings were used to synthesise thin films of carbon nanotubes on a polyimide substrate. Variations of evaporation casting were used to decrease the evaporation rate in attempts of carbon nanotube alignment through a self-organising liquid crystal phase during evaporation. Other methods of inkjet printing and air flow evaporation casting were also attempted to achieve alignment. Electrical connections using a conductive polymer and metal wires were fabricated onto the samples for electrical measurements. A four-point probe resistance measurement under the application of strain was used to elicit the gauge factors. The strain gauge design was modified from previous work for more reliable electrical connections and for higher applied strains. A procedure for electrical measurements coupled with the application of strain was devised and the gauge factors achieved varied between 0.1 and 4.0 with a median of 1.1 ±0.1. The median gauge factor was reproducible and exhibited by several samples fabricated with different types of evaporation casting. The decrease in evaporation rate did not result in either alignment or relatively high gauge factors. In general, alignment was not achieved with the other methods of air flow evaporation and inkjet printing.
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7

Howell, Aaron W. "Evaporation and disintegration of heated thin liquid sheets." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53861.

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Анотація:
In this study, a numerical model is used to investigate the evaporation and flow characteristics of heated liquid sheets and films. The liquid is modeled as water and as black liquor, a byproduct produced by paper mills. In the pulping process, black liquor is concentrated in an evaporator as a falling film. The effectiveness of the evaporator is reduced due to fouling on heat transfer surfaces. Two flow arrangements are studied: falling films, where the liquor and steam are separated by a heat transfer surface; and liquid curtains, which is a thin sheet of liquid falling due to gravity surrounded by steam. For the liquid curtain, the liquid and gas come into direct contact, therefore there is no place for fouling to occur allowing for a more consistent operation of the evaporator. This type of arrangement is not currently used in paper mills but is being investigated in this work to determine its feasibility. The fluid system is simulated using the finite volume method with a single-fluid field to capture the liquid-gas interface. This study investigates how the breakup of a liquid curtain is affected by flow parameters and how the breakup into droplets influences the evaporation characteristics of the liquid curtain. It is found that the falling film evaporator has a much higher liquid evaporation rate than evaporating as a liquid curtain. However the falling film evaporator has an entrance length with no evaporation, and liquid curtains allow for evaporation to start occurring very near the inlet. If reducing length of the evaporator is a priority, liquid curtain evaporators can obtain a higher evaporation rate than falling films within the same distance. Falling film evaporation has a higher steam efficiency than a liquid curtain evaporator. However, for short evaporator lengths the rate at which water is removed from a liquid curtain evaporator is much greater, but at the cost of a higher steam consumption rate.
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8

Vaartstra, Geoffrey. "Comprehensive modeling of thin film evaporation in micropillar wicks." Thesis, Massachusetts Institute of Technology, 2019. https://hdl.handle.net/1721.1/128335.

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Анотація:
Thesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, June, 2019
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 48-50).
In the Information Age, society has become accustomed to continuous, rapid advances in electronics technology. As the power density of these devices increases, heat dissipation threatens to become the limiting factor for growth in the electronics industry. In order to sustain rapid growth, the development of advanced thermal management strategies to efficiently dissipate heat from electronics is imperative. Porous wicks are of great interest in thermal management because they are capable of passively supplying liquid for thin film evaporation, a promising method to reliably dissipate heat in high-performance electronics. While the maximum heat flux that can be reliably sustained (the dryout heat flux) has been well-characterized for many wick configurations, key design information is missing as many previous models cannot determine the distribution of evaporator surface temperature nor temperature at the evaporator's interface with electronic components.
Temperature gradients are inherent to the passive capillary pumping mechanism since the shape of the liquid-vapor interface is a function of the local liquid pressure, causing spatial variation of permeability and the heat transfer coefficient (HTC). Accounting for the variation of the liquid-vapor interface to determine the resulting temperature gradients has been a significant modeling challenge. In this thesis, we present a comprehensive modeling framework for thin film evaporation in micropillar wicks that can predict dryout heat flux and local temperature simultaneously. Our numerical approach captures the effect of varying interfacial curvature across the micropillar evaporator to determine the spatial distributions of temperature and heat flux. Heat transfer and capillary flow in the wick are coupled in a computationally efficient manner via incorporation of parametric studies to relate geometry and interface shape to local permeability and HTC.
While most previous models only consider uniform thermal loads, our model offers the flexibility to consider arbitrary (non-uniform) thermal loads, making it suitable to guide the design of porous wick evaporators for cooling realistic electronic devices. We present case studies from our model that underscore its capability to guide design with respect to temperature and dryout heat flux. This model predicts notable variations of the HTC (-30%) across the micropillar wick, highlighting the significant effects of interfacial curvature that have not been considered previously. We demonstrate the model's capability to simulate non-uniform thermal loads and show that wick configuration with respect to the input thermal distribution has a significant effect on performance due to the distribution of the HTC and capillary pressure. Further, we are able to quantify the tradeoff associated with enhancing either dryout heat flux or the HTC by optimizing geometry.
We offer insights into optimization and further analyze the effects of micropillar geometry on the HTC. Finally, we integrate this model into a fast, compact thermal model (CTM) to make it suitable for thermal/electronics codesign of high-performance devices and demonstrate a thermal simulation of a realistic microprocessor using this CTM. We discuss further uses of our model and describe an experimental platform that could validate our predicted temperature distributions. Lastly, we propose a biporous, area-enhanced wick structure that could push thermal performance to new limits by overcoming the design challenge typically associated with porous wick evaporators.
by Geoffrey Vaartstra.
S.M.
S.M. Massachusetts Institute of Technology, Department of Mechanical Engineering
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9

Pauken, Michael T. "An experimental investigation of the spreading, durability and maintainability of monolayer films for evaporation suppression from stationary watr pools." Diss., Georgia Institute of Technology, 1994. http://hdl.handle.net/1853/33624.

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Sait, Hani. "Analytical and experimental study of thin film evaporation in heat pipes /." free to MU campus, to others for purchase, 2004. http://wwwlib.umi.com/cr/mo/fullcit?p3164540.

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Книги з теми "TIN EVAPORATION"

1

Gupta, Supriya Kumar Sen. Bitumen immobilization of aqueous radwaste by thin-film evaporation. Chalk River, Ontario: Geochemistry Research Branch, Chalk River Laboratories, 1996.

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Kopecký, Dušan. Deposition of polypyrrole thin films by advanced method: Matrix assisted pulsed laser evaporation. Hauppauge, N.Y: Nova Science Publishers, 2011.

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W, Todd Paul, and United States. National Aeronautics and Space Administration., eds. Solutocapillary convection effects on polymeric membrane morphology: Final report. [Washington, D.C: National Aeronautics and Space Administration, 1996.

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W, Todd Paul, and United States. National Aeronautics and Space Administration., eds. Solutocapillary convection effects on polymeric membrane morphology: Final report. [Washington, D.C: National Aeronautics and Space Administration, 1996.

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5

Th©♭, Stephens Sin-Tsun. Studies of laser-target interactions in pulsed excimer laser evaporation of superconducting oxides and other metal oxides. 1993.

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6

Campbell, John L. Economy and Class. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780190872434.003.0003.

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Chapter 3 begins by showing how long-term trends in the economy beginning in the late 1960s and early 1970s, notably stagflation, automation, globalization, and increased international competition, caused working- and middle-class wage stagnation, rising inequality, and mounting levels of personal debt in America. These in turn caused many Americans to worry that the American Dream was slipping out of reach and that the chances for upward mobility were evaporating into thin air. They were right. This is a story of the decline of America’s postwar Golden Age of prosperity. Trump took advantage of this by promising to be the best jobs-creating president God ever put on Earth and claiming that his economic program would boost economic growth beyond what most economists believed was possible.
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Частини книг з теми "TIN EVAPORATION"

1

Forouzanmehr, Mohsen, Kazem Reza Kashyzadeh, Amirhossein Borjali, Mosayeb Jafarnode, and Mahmoud Chizari. "Effects of CrN/TiN Coatings on Interfacial Contact Resistance of Stainless Steel 410 Bipolar Plates in Fuel Cells." In Springer Proceedings in Energy, 133–39. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-63916-7_17.

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AbstractChallenge on energy resources exists, especially when the fossil resources are limited. Fuel cells, as an alternative replacement, can be used. Fuel cells with coated bipolar plates are the interest of this paper. Current research is concerned with the effects of CrN/TiN coatings on interfacial contact resistance (ICR). Stainless steel 410 was selected as a base metal, and the coating process was performed using chromium nitride and titanium nitride by cathodic arc evaporation method. It was found that the surface roughness and ICR values of CrN-coated sample are lower than the TiN-coated sample. The concluded that the CrN layer could be replaced with the TiN layer for better performance of bipolar plates.
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2

Chang, Chi Lung, Jui Yun Jao, Wei Yu Ho, and Da Yung Wang. "Characteristics of TiAl-Doped DLC/TiAlN/TiN Multilayered Coatings Synthesized by Cathodic Arc Evaporation." In Solid State Phenomena, 247–56. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908451-25-6.247.

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3

Hsu, Cheng Hsun, Jung Kai Lu, and Ming Li Chen. "Study on Characteristics of ADI Coated DLC/ TiN /TiAlN Coatings by Cathodic Arc Evaporation." In Solid State Phenomena, 257–64. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908451-25-6.257.

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Sadyrin, Evgeniy, Roman Karotkiyan, Nikolay Sushentsov, Sergey Stepanov, Igor Zabiyaka, Evgeniy Kislyakov, and Alexander Litvinenko. "Mechanical Properties Derived by Spherical Indentation of TiN Coating Deposited by a Method Combining Magnetron Sputtering and Arc Evaporation." In Springer Proceedings in Materials, 85–95. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-45120-2_8.

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5

Huang, Hong-Hsin, Yen-Ming Chen, and Ming-Chih Huang. "Growth Characteristics and Properties of Tin-Doped Indium Oxide Thin Films as a Function of Oxygen Pressure When Prepared by E-beam Evaporation." In Lecture Notes in Electrical Engineering, 783–89. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-04573-3_97.

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6

Frey, Hartmut. "Vacuum Evaporation." In Handbook of Thin-Film Technology, 13–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-642-05430-3_3.

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7

Kim, Hyoun Woo, S. H. Shim, and Ju Hyun Myung. "Characteristics of SnO2 One-Dimensional Nanomaterials Synthesized on TiN-Coated Substrates by the Evaporation of Sn Powders." In Materials Science Forum, 658–61. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-995-4.658.

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8

Azoulay, Jacob. "Superconductors Thin Films Prepared by Resistive Evaporation." In Physics and Materials Science of High Temperature Superconductors, II, 485–94. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2462-1_30.

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Ikhmayies, Shadia J. "Nanocrystalline CdS Thin Films Prepared by Vacuum Evaporation." In Characterization of Minerals, Metals, and Materials, 293–302. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118371305.ch35.

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Liou, S. H., N. J. Ianno, B. Johs, D. Thompson, D. Meyer, and John A. Woollam. "Pulsed Laser Evaporation of Tl-Ba-Ca-Cu-O Films." In Science and Technology of Thin Film Superconductors, 35–43. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5658-5_5.

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Тези доповідей конференцій з теми "TIN EVAPORATION"

1

Jeng, Ming-Jer, Hao-Chun Yang, and Liann-Be Chang. "Tin sulfide thin films prepared by thermal evaporation and sulfurization." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6924937.

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2

Lazar, K. Anlin, V. J. Cicily Rigi, P. Hajara, P. Praveen, and K. J. Saji. "Deposition of tin disulfide thin films by thermal evaporation and sulphurization." In PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019. AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5130288.

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3

Banotra, Arun, and Naresh Padha. "Structural and optical properties of tin disulphide thin films grown by flash evaporation." In DAE SOLID STATE PHYSICS SYMPOSIUM 2017. Author(s), 2018. http://dx.doi.org/10.1063/1.5028884.

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Chakraborty, Rupak, Vera Steinmann, R. Jaramillo, Katy Hartman, Riley E. Brandt, Helen Hejin Park, Jeremy Poindexter, Yun Seog Lee, Roy G. Gordon, and Tonio Buonassisi. "Phase-pure evaporation of tin (II) sulfide for solar cell applications." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925386.

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5

Guler, Mehmet Oguz, Mirac Alaf, Deniz Gultekin, Hatem Akbulut, and Ahmet Alp. "Oxidation Kinetics of Nano Crystalline Tin Oxide Conductive Thin Films." In ASME 2008 2nd Multifunctional Nanocomposites and Nanomaterials International Conference. ASMEDC, 2008. http://dx.doi.org/10.1115/mn2008-47072.

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Tin oxide was the first transparent conductor to have achieved significant commercialization. SnO2 is an n-type semiconductor with an optical band gap of about 3.6 eV in poly crystalline form. One of the main reasons for the wide use is its rather desirable characteristic of having both, high optical transmittance and high electrical conductivity. Under optimum deposition conditions, tin oxide crystallizes in the tetragonal (rutile) structure. In this study, nano crystalline thin oxide conductive thin films has been manufactured by thermal evaporation techniques onto steel substrates using metallic tin targets and oxidation kinetics have been studied after D.C. plasma oxidation by using XRD (X-Ray Diffraction). The activation energy of SnO and SnO2 from Sn phase transformations has also been studied.
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6

Füchsel, Kevin, Ulrike Schulz, and Norbert Kaiser. "Low Temperature Deposition of Indium Tin Oxide Films by Plasma Ion-Assisted Evaporation." In Optical Interference Coatings. Washington, D.C.: OSA, 2007. http://dx.doi.org/10.1364/oic.2007.thb3.

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7

Yuki, Kazuhisa, Masahiro Uemura, Koichi Suzuki, and Ken-ichi Sunamoto. "Boiling/Evaporation Heat Transfer Augmentation Using Subchannels-Inserted Metal Porous Media." In ASME 2013 Heat Transfer Summer Conference collocated with the ASME 2013 7th International Conference on Energy Sustainability and the ASME 2013 11th International Conference on Fuel Cell Science, Engineering and Technology. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/ht2013-17220.

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Two-phase flow loop system using a metal porous heat sink is proposed as a cooling system of the future power electronic devices with a heat load exceeding 300W/cm2. In this paper, as the first step, the heat transfer performance of the porous heat sink is evaluated under high heat flux conditions and the applicability and some engineering issues are discussed. The porous medium, which is fabricated by sintering copper particles, has a functional structure with several sub-channels inside it to enhance phase-change as well as discharge of generated vapor outside the porous medium. This porous heat sink is attached onto a heating chip and removes the heat by evaporating cooling liquid passing through the porous medium against the heat flow. Experiments using 30 kW of heating system show that the heat transfer performance of a copper-particles-sintered porous medium with the sub-channels exceeds 800W/cm2 in both high and low subcooling cases and achieves 300W/cm2 at a wall temperature of 150 °C (Tin = 70 °C) and 130 °C (Tin = 70 °C). These results prove that this porous heat sink is applicable enough for cooling 300 W/cm2 class of power electronic devices.
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Tammarugwattana, Narin, Sukittaya Jessadaluk, Narathon Khemasiri, Sakon Rahong, Adirek Rangkasikorn, Supamas Wirunchit, Navaphun Kayunkid, and Jiti Nukeaw. "Study of optical and electrical properties of tin doped cobalt-phthalocyanine thin films prepared by thermal co-evaporation." In INTERNATIONAL CONFERENCE ON SCIENCE AND TECHNOLOGY OF EMERGING MATERIALS: Proceedings of the Second International Conference on Science and Technology of Emerging Materials 2018. Author(s), 2018. http://dx.doi.org/10.1063/1.5053203.

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Yan Shen, Qing Liu, Zhiyuan Zuo, Mingsheng Xu, Huan Liu, Ying Wang, Xiangang Xu, Kai Jiang, Muqing Zhang, and Xiaobo Hu. "Fabrication of indium tin oxide film with controllable surface morphology via oxygen participant electron-beam evaporation technique." In 2013 10th China International Forum on Solid State Lighting (ChinaSSL). IEEE, 2013. http://dx.doi.org/10.1109/sslchina.2013.7177352.

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Shen, Yan, Jianxing Shen, Sima Dimitrijiev, Jisheng Han, and Xiangang Xu. "Characteristics of indium-tin-oxide nanowiskers grown by vapor-liquid-solid growth method and electron-beam evaporation technique." In 2015 12th China International Forum on Solid State Lighting (SSLCHINA). IEEE, 2015. http://dx.doi.org/10.1109/sslchina.2015.7360715.

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Звіти організацій з теми "TIN EVAPORATION"

1

Wang, Evelyn N. Nanoengineered Surfaces for High Flux Thin Film Evaporation. Fort Belvoir, VA: Defense Technical Information Center, July 2013. http://dx.doi.org/10.21236/ada583176.

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2

Hundal, T. S. 242-A Evaporator Condensate Tank (TK-C-100) tie down evaluation. Office of Scientific and Technical Information (OSTI), January 1995. http://dx.doi.org/10.2172/10114211.

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3

Hallinan, Kevin P., and A. R. Kashani. Electrohydrodynamic Control of Thin Film Evaporative Heat Transfer in Micro Groove Arrays. Fort Belvoir, VA: Defense Technical Information Center, July 1999. http://dx.doi.org/10.21236/ada378389.

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4

Yu, N., H. Kung, M. Nastasi, and D. Li. Incorporation of iron cations into epitaxial sapphire thin films by co-evaporation and subsequent thermal annealing. Office of Scientific and Technical Information (OSTI), May 1994. http://dx.doi.org/10.2172/10150117.

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Hundal, T. S. 242-A Evaporator ion exchange column (IX-D-1) tie down evaluation. Office of Scientific and Technical Information (OSTI), January 1995. http://dx.doi.org/10.2172/10115174.

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ADAMS, DAVID P., LAURENCE E. BROWN, RONALD S. GOEKE, JUAN A. ROMERO, and ANDREW D. SILVA. Evolution of Stress in ScD{sub 2}/Cr Thin Films Fabricated by Evaporation and High Temperature Reaction. Office of Scientific and Technical Information (OSTI), June 2001. http://dx.doi.org/10.2172/783088.

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7

Wayner, Jr, P., M. Sujanani, and A. Liu. Microcomputer enhanced optical investigation of spreading and evaporative processes in ultra thin films. Office of Scientific and Technical Information (OSTI), January 1990. http://dx.doi.org/10.2172/5077921.

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Wayner, P. C. Jr, and A. H. Liu. Microcomputer enhanced optical investigation of spreading and evaporative processes in ultra thin films. Office of Scientific and Technical Information (OSTI), December 1991. http://dx.doi.org/10.2172/5897804.

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Wayner, P. C. Jr, M. Sujanani, and A. H. Liu. Microcomputer enhanced optical investigation of spreading and evaporative processes in ultra thin films. Office of Scientific and Technical Information (OSTI), December 1990. http://dx.doi.org/10.2172/6175898.

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Wayner, P. C. Jr, and A. H. Liu. Microcomputer enhanced optical investigation of spreading and evaporative processes in ultra thin films. Progress report, January 1, 1991--December 31, 1991. Office of Scientific and Technical Information (OSTI), December 1991. http://dx.doi.org/10.2172/10110007.

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