Увійти

Готові списки джерел за темами / Tin diselenide / Статті в журналах

Статті в журналах з теми "Tin diselenide"

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: Tin diselenide.

Автор: Grafiati

Опубліковано: 6 вересня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Tin diselenide".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.

1

Kushkhov, A. R., D. S. Gaev, O. I. Rabinovich, and A. G. Stolyarov. "Tin diselenide quantum-sized island films." Crystallography Reports 57, no. 2 (March 2012): 288–91. http://dx.doi.org/10.1134/s1063774512010063.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

El-Nahass, M. M. "Optical properties of tin diselenide films." Journal of Materials Science 27, no. 24 (1992): 6597–604. http://dx.doi.org/10.1007/bf01165942.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Grosse, Corinna, Matti B. Alemayehu, Anna Mogilatenko, Olivio Chiatti, David C. Johnson, and Saskia F. Fischer. "Superconducting Tin Selenide/Niobium Diselenide Ferecrystals†." Crystal Research and Technology 52, no. 10 (September 27, 2017): 1700126. http://dx.doi.org/10.1002/crat.201700126.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Peng, Hongrui, and Jin Huang. "Synthesis and Characterization of Tin Diselenide Nanosheets." Journal of Dispersion Science and Technology 28, no. 8 (October 2007): 1187–89. http://dx.doi.org/10.1080/01932690701527755.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Yu, Peng, Xuechao Yu, Wanglin Lu, Hsin Lin, Linfeng Sun, Kezhao Du, Fucai Liu, et al. "Fast Photoresponse from 1T Tin Diselenide Atomic Layers." Advanced Functional Materials 26, no. 1 (November 19, 2015): 137–45. http://dx.doi.org/10.1002/adfm.201503789.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Urmila, K. S., T. Namitha Asokan, and B. Pradeep. "Structural and optical characterization of reactive evaporated tin diselenide thin films." IOP Conference Series: Materials Science and Engineering 73 (February 17, 2015): 012058. http://dx.doi.org/10.1088/1757-899x/73/1/012058.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Achimovičová, Marcela, Klebson Lucenildo da Silva, Nina Daneu, Aleksander Rečnik, Sylvio Indris, Holger Hain, Marco Scheuermann, Horst Hahn, and Vladimír Šepelák. "Structural and morphological study of mechanochemically synthesized tin diselenide." Journal of Materials Chemistry 21, no. 16 (2011): 5873. http://dx.doi.org/10.1039/c1jm10330j.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Liu, Jishu, Xiaohui Li, Yixuan Guo, Abdual Qyyum, and Zhaojiang Shi. "Emerging 2D Semiconducting Materials: Tin Diselenide for Ultrafast Photonics." Annalen der Physik 532, no. 5 (March 9, 2020): 1900590. http://dx.doi.org/10.1002/andp.201900590.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Zhang, Yu, Yu Liu, Khak Ho Lim, Congcong Xing, Mengyao Li, Ting Zhang, Pengyi Tang, et al. "Tin Diselenide Molecular Precursor for Solution-Processable Thermoelectric Materials." Angewandte Chemie 130, no. 52 (November 25, 2018): 17309–14. http://dx.doi.org/10.1002/ange.201809847.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Zhang, Yu, Yu Liu, Khak Ho Lim, Congcong Xing, Mengyao Li, Ting Zhang, Pengyi Tang, et al. "Tin Diselenide Molecular Precursor for Solution-Processable Thermoelectric Materials." Angewandte Chemie International Edition 57, no. 52 (November 25, 2018): 17063–68. http://dx.doi.org/10.1002/anie.201809847.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

11

Amalraj, L., M. Jayachandran, and C. Sanjeeviraja. "Preparation and characterization of tin diselenide thin film by spray pyrolysis technique." Materials Research Bulletin 39, no. 14-15 (December 2004): 2193–201. http://dx.doi.org/10.1016/j.materresbull.2004.08.006.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

12

Wang, Mengxia, Zhengping Wang, Xinguang Xu, Sihou Duan, and Chenlin Du. "Tin diselenide-based saturable absorbers for eye-safe pulse lasers." Nanotechnology 30, no. 26 (April 10, 2019): 265703. http://dx.doi.org/10.1088/1361-6528/ab1115.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

13

Liu, Mei, Ying Shi, Guangping Zhang, Yongheng Zhang, Meimei Wu, Junfeng Ren, and Baoyuan Man. "Surface-Enhanced Raman Spectroscopy of Two-Dimensional Tin Diselenide Nanoplates." Applied Spectroscopy 72, no. 11 (July 31, 2018): 1613–20. http://dx.doi.org/10.1177/0003702818794685.

Повний текст джерела

Анотація:

Surface-enhanced Raman spectroscopy (SERS) is a powerful spectroscopy technique to detect and characterize molecules at a very low concentration level. The two-dimensional (2D) semi-conductor layered material, tin diselenide (SnSe2), is used as a new substrate for enhancing the Raman signals of adsorbed molecules. Three kinds of molecules—Rhodamine 6G (R6G), crystal violet (CV), and methylene blue (MB)—are used as probe molecules to evaluate the SERS performance of SnSe2. The Raman signals of different molecules can be enhanced by SnSe2 nanoplates (NPs). The distinguishable Raman signal of R6G molecules can be obtained for adsorbent concentrations as low as 10−17 mol/L. Based on a detailed analysis of the bandgap structure and opto-electrical properties of SnSe2 NPs, we discuss the process of charge transfer and the Raman enhancement mechanism of SnSe2 NP. The high Raman sensitivity of SnSe2 NPs is related to the charge transfer between molecules and SnSe2, 2D layered structure, and indirect bandgap of few-layered SnSe2. The research results will help to expand the application of SnSe2 in microanalysis, improve the measurement accuracy of SERS, and possibly find use in optoelectronic device integration.

Стилі APA, Harvard, Vancouver, ISO та ін.

14

Yang, Hui, Haoxuan Liu, Xijun Liu, Zhe Zhao, and Jun Luo. "Electroreduction of carbon dioxide to formate over a thin-layered tin diselenide electrode." Catalysis Science & Technology 8, no. 21 (2018): 5428–33. http://dx.doi.org/10.1039/c8cy00912k.

Повний текст джерела

Анотація:

We first report a thin-layered SnSe₂ film as a robust catalyst for CO₂ electroreduction, efficiently affording formate with a faradaic efficiency of 91% and a stable activity for more than 100 h at −0.8 V versus the reversible hydrogen electrode.

Стилі APA, Harvard, Vancouver, ISO та ін.

15

Bhatt, V. P., K. Gireesan, and C. F. Desai. "Effect of heat treatment on the optical absorption of tin diselenide thin films." Crystal Research and Technology 25, no. 2 (February 1990): 209–13. http://dx.doi.org/10.1002/crat.2170250219.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

16

Ma, Zhong Quan, and Ke Gao Liu. "The Patented Project Design for Preparing SnSe₂ Nanosheets." Advanced Materials Research 706-708 (June 2013): 349–52. http://dx.doi.org/10.4028/www.scientific.net/amr.706-708.349.

Повний текст джерела

Анотація:

The patent design provides one method for preparing photoelectricity thin film used in solar cell. It belongs to the field of photoelectric film preparation technology. The SnSe2 nanosheet was prepared from the solid powders of SnCl22H2O and SeO2. The hydrazine hydrate, NaOH and ammonia are used as reducing agents and assistant agent respectively in the patent. It includes the steps of reacting, heating, washing, drying to prepared Tin diselenide. The obtained SnSe2 with high purity has good dispersivity, and regular and uniform shape. The method has a wide application prospect because of safety process and the pollution-free and manageability aided solution.

Стилі APA, Harvard, Vancouver, ISO та ін.

17

Ran, Baofa, Haiyue Sun та Yufei Ma. "Two-dimensional tin diselenide passively Q-switched 2 μm Tm:YAP laser". Infrared Physics & Technology 105 (березень 2020): 103227. http://dx.doi.org/10.1016/j.infrared.2020.103227.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

18

Bhatt, V. P., and K. Gireesan. "Influence of heat treatment on the crystallization of thermally evaporated tin diselenide (SnSe2) thin films." Journal of Materials Science Letters 9, no. 3 (March 1990): 362–64. http://dx.doi.org/10.1007/bf00725851.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

19

Bhatt, V. P., and K. Gireesan. "Influence of heat treatment on electrical properties of thermally evaporated tin diselenide (SnSe2) thin films." Journal of Materials Science: Materials in Electronics 2, no. 1 (March 1991): 4–6. http://dx.doi.org/10.1007/bf00694995.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

20

Patel, Megha, G. K. Solanki, Mohit Tannarana, Sanjay Bhakhar, Nashreen Patel, Chetan Zankat, Pratik M. Pataniya, V. M. Pathak, and K. D. Patel. "Synergistic effect of hafnium doping in tin diselenide for enhanced photodetection application." Optical Materials 133 (November 2022): 112909. http://dx.doi.org/10.1016/j.optmat.2022.112909.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

21

GHEZAL, F., T. BELAL, and R. TALA-IGHIL ZAIR. "FABRICATION AND CHARACTERIZATION OF CuInSe2 THIN FILM SOLAR CELLS WITH FLUORINE DOPED ZnO AS NEW BUFFER LAYER." Chalcogenide Letters 17, no. 10 (October 2020): 521–27. http://dx.doi.org/10.15251/cl.2020.1710.521.

Повний текст джерела

Анотація:

Copper indium diselenide CuInSe2 (CISe) thin films are very important semiconductor material for solar cell applications.In this study, CuInSe2 (CIS), and Fluorine doped ZnO (ZnO:F) thin films were electrodeposited from aqueous solutions consisting of CuCl2, InCl3,and SeO2 with Na-citrate as complexing agents onto Fluorine doped tin oxide (FTO) substrates for CuInSe2,and ZnCl2,NH4F were used as sources of ZnO and fluorine doping respectively. The microstructures, morphologies, and optical properties of the CuInSe2 With new buffer layer fluorine doped ZnO (FZO) were characterized. X-ray diffraction analysis showed that all the films CuInSe2 are tetragonal chalcopyrite with favored orientation along (112) direction and Cu:In:Se crystals are nearly 1:1:2 atomic ratio. The surface morphology of all layers were void free, compact and fairly uniform. The near stoichiometries CuInSe2 film (annealing at 350°C), has the optica

Стилі APA, Harvard, Vancouver, ISO та ін.

22

Peter, L. M. "Towards sustainable photovoltaics: the search for new materials." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, no. 1942 (May 13, 2011): 1840–56. http://dx.doi.org/10.1098/rsta.2010.0348.

Повний текст джерела

Анотація:

The opportunities for photovoltaic (PV) solar energy conversion are reviewed in the context of projected world energy demands for the twenty-first century. Conventional single-crystal silicon solar cells are facing increasingly strong competition from thin-film solar cells based primarily on polycrystalline absorber materials, such as cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS). However, if PVs are to make a significant contribution to satisfy global energy requirements, issues of sustainability and cost will need to be addressed with increased urgency. There is a clear need to expand the range of materials and processes that is available for thin-film solar cell manufacture, placing particular emphasis on low-energy processing and sustainable non-toxic raw materials. The potential of new materials is exemplified by copper zinc tin sulphide, which is emerging as a viable alternative to the more toxic CdTe and the more expensive CIGS absorber materials.

Стилі APA, Harvard, Vancouver, ISO та ін.

23

Chen, Wenjian, Hippolyte Hirwa, Jörg Ohland, Teoman Taskesen, Ulf Mikolajczak, Devendra Pareek, Jürgen Parisi, and Levent Gütay. "SiOxNy back-contact barriers for CZTSe thin-film solar cells." PLOS ONE 16, no. 1 (January 12, 2021): e0245390. http://dx.doi.org/10.1371/journal.pone.0245390.

Повний текст джерела

Анотація:

The formation of molybdenum diselenide (MoSe2) is widely observed at the back-contact interface for copper zinc tin selenide (CZTSe) thin-film solar cells. Depending on individual selenium (Se) supply and thermal conditions for forming CZTSe absorbers on molybdenum (Mo) substrates, the thickness of MoSe2 can vary from a few hundreds of nanometers up to ≈ 1 μm, which is comparable to the commonly adopted thickness of 1 ~ 1.5 μm for CZTSe absorbers. In this study, for controlling the thickness of interfacial MoSe2, thin diffusion barrier layers of silicon oxynitride (SiOxNy) are deposited onto Mo layers prior to the growth of CZTSe absorbers in the fabrication process. As a result, a reduction in the thicknesses of MoSe2 layers is achieved. In terms of energy conversion efficiency (η), CZTSe solar cells grown on Mo/SiOxNy back contacts suffer a deterioration as the SiOxNy layers get thicker. CZTSe solar cells grown on Mo/SiOxNy/Mo back contacts preserve their efficiencies at ≈ 11% with thin 10 nm SiOxNy layers.

Стилі APA, Harvard, Vancouver, ISO та ін.

24

Potapov, Vladimir, Svetlana Amosova, Irina Doron'kina, Anna Starkova, and Laszlo Hevesi. "Syn addition of dialkyl diselenide to phenylacetylene in the presence of tin tetrachloride." Sulfur Letters 25, no. 3 (January 2002): 101–3. http://dx.doi.org/10.1080/02786110212866.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

25

Liu, Junchi, Mianzeng Zhong, Xiao Liu, Guangzhuang Sun, Peng Chen, Zhengwei Zhang, Jia Li, et al. "Two-dimensional plumbum-doped tin diselenide monolayer transistor with high on/off ratio." Nanotechnology 29, no. 47 (September 25, 2018): 474002. http://dx.doi.org/10.1088/1361-6528/aadf5a.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

26

E Smith, Andrew, and DF Lynch. "A Comparison between Electron Crystal Scattering Potentials derived from X-ray Electron Densities and from Atom Muffin Tin Potentials." Australian Journal of Physics 38, no. 3 (1985): 487. http://dx.doi.org/10.1071/ph850487.

Повний текст джерела

Анотація:

Two different forms of electron crystal potential are compared for the particular cases of aluminium and niobium diselenide. One of these is the solid-state muffin tin potential frequently used for band structure and low energy electron diffraction problems, and with its natural representation in real space. The other potential, derived from X-ray structure factors, is that most commonly used in electron microscopy structure determinations. It is expressed in terms of its Fourier coefficients and is accordingly a reciprocal space representation. Comparisons are carried out in both spaces. It is concluded that differences between the potentials are only minor and are mainly due to details in truncation and superposition.

Стилі APA, Harvard, Vancouver, ISO та ін.

27

Xue, Mengfei, Qi Zheng, Runkun Chen, Lihong Bao, Shixuan Du, and Jianing Chen. "Tin diselenide van der Waals materials as new candidates for mid-infrared waveguide chips." Nanoscale 11, no. 30 (2019): 14113–17. http://dx.doi.org/10.1039/c9nr04264d.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

28

Cleary, D. A., and D. R. Baer. "XPS and ESR of tin diselenide containing phosphorus cobaltocene [(SnSe2)-1%P{CoCp2}0.36]." Chemistry of Materials 4, no. 1 (January 1992): 112–16. http://dx.doi.org/10.1021/cm00019a024.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

29

Cheng, Chen, Ziqi Li, Ningning Dong, Jun Wang та Feng Chen. "Tin diselenide as a new saturable absorber for generation of laser pulses at 1μm". Optics Express 25, № 6 (8 березня 2017): 6132. http://dx.doi.org/10.1364/oe.25.006132.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

30

de Groot, C. H. (Kees), Chitra Gurnani, Andrew L. Hector, Ruomeng Huang, Marek Jura, William Levason, and Gillian Reid. "Highly Selective Chemical Vapor Deposition of Tin Diselenide Thin Films onto Patterned Substrates via Single Source Diselenoether Precursors." Chemistry of Materials 24, no. 22 (October 30, 2012): 4442–49. http://dx.doi.org/10.1021/cm302864x.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

31

Biswas, Rabindra, Medha Dandu, Sruti Menon, Keshav Kumar Jha, Jyothsna K. M., Kausik Majumdar, and Varun Raghunathan. "Third-harmonic generation in multilayer Tin Diselenide under the influence of Fabry-Perot interference effects." Optics Express 27, no. 20 (September 24, 2019): 28855. http://dx.doi.org/10.1364/oe.27.028855.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

32

Li, Tingting, Dongzhi Zhang, Qiannan Pan, Mingcong Tang, and Sujing Yu. "UV enhanced NO2 gas sensing at room temperature based on coral-like tin diselenide/MOFs-derived nanoflower-like tin dioxide heteronanostructures." Sensors and Actuators B: Chemical 355 (March 2022): 131049. http://dx.doi.org/10.1016/j.snb.2021.131049.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

33

Chuang, Chuan Lung, Ming Wei Chang, Nien Po Chen, Chung Chiang Pan, and Chung Ping Liu. "Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes." International Journal of Photoenergy 2015 (2015): 1–8. http://dx.doi.org/10.1155/2015/483147.

Повний текст джерела

Анотація:

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

Стилі APA, Harvard, Vancouver, ISO та ін.

34

YAO, N. J., S. M. HUANG, J. B. CHU, H. B. ZHU, Z. SUN, and Y. W. CHEN. "STUDY OF THE STOICHIOMETRIC RATIO OF ONE-STEP ELECTRODEPOSITED CuInSe2 FILMS ON ITO/SODA-LIME GLASS." Surface Review and Letters 15, no. 04 (August 2008): 419–26. http://dx.doi.org/10.1142/s0218625x08011548.

Повний текст джерела

Анотація:

Copper indium diselenide ( CuInSe 2) thin films were grown on indium–tin oxide (ITO)/soda-lime glass using a one-step cathodic electrodeposition process at potentials lower than -0.6 V vs SCE, and in the presence of a large excess of In 3+. The source solution contained CuCl 2, InCl 3, and H 2 SeO 3 complexed by citric acid. The concentration of InCl 3 in the electrochemical bath affected the structure, composition, stoichiometric ratio, and morphological properties of electrodeposited films. CuInSe 2 films with a chalcopyrite structure and quite good stoichiometry were directly electrodeposited from a solution of 20 mM InCl 3, 5 mM CuCl 2, and 8 mM H 2 SeO 3. Annealing of these CuInSe 2 films in the temperature range from 300°C to 500°C improves their crystallinity and increases their grain size. Good chalcopyrite CuInSe 2 films with a (112) preferential orientation suitable for the production of efficient solar cells are obtained after annealing at 500°C. The formation mechanism of the ternary CuInSe 2 compound during the electrodeposition process was discussed.

Стилі APA, Harvard, Vancouver, ISO та ін.

35

D'Olimpio, Gianluca, Daniel Farias, Chia-Nung Kuo, Luca Ottaviano, Chin Shan Lue, Danil W. Boukhvalov, and Antonio Politano. "Tin Diselenide (SnSe2) Van der Waals Semiconductor: Surface Chemical Reactivity, Ambient Stability, Chemical and Optical Sensors." Materials 15, no. 3 (February 2, 2022): 1154. http://dx.doi.org/10.3390/ma15031154.

Повний текст джерела

Анотація:

Tin diselenide (SnSe2) is a layered semiconductor with broad application capabilities in the fields of energy storage, photocatalysis, and photodetection. Here, we correlate the physicochemical properties of this van der Waals semiconductor to sensing applications for detecting chemical species (chemosensors) and millimeter waves (terahertz photodetectors) by combining experiments of high-resolution electron energy loss spectroscopy and X-ray photoelectron spectroscopy with density functional theory. The response of the pristine, defective, and oxidized SnSe2 surface towards H2, H2O, H2S, NH3, and NO2 analytes was investigated. Furthermore, the effects of the thickness were assessed for monolayer, bilayer, and bulk samples of SnSe2. The formation of a sub-nanometric SnO2 skin over the SnSe2 surface (self-assembled SnO2/SnSe2 heterostructure) corresponds to a strong adsorption of all analytes. The formation of non-covalent bonds between SnO2 and analytes corresponds to an increase of the magnitude of the transferred charge. The theoretical model nicely fits experimental data on gas response to analytes, validating the SnO2/SnSe2 heterostructure as a suitable playground for sensing of noxious gases, with sensitivities of 0.43, 2.13, 0.11, 1.06 [ppm]−1 for H2, H2S, NH3, and NO2, respectively. The corresponding limit of detection is 5 ppm, 10 ppb, 250 ppb, and 400 ppb for H2, H2S, NH3, and NO2, respectively. Furthermore, SnSe2-based sensors are also suitable for fast large-area imaging applications at room temperature for millimeter waves in the THz range.

Стилі APA, Harvard, Vancouver, ISO та ін.

36

Gao, Wei, Zhaoqiang Zheng, Yongtao Li, Yu Zhao, Liang Xu, Huixiong Deng, and Jingbo Li. "High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism." Nanoscale 11, no. 28 (2019): 13309–17. http://dx.doi.org/10.1039/c9nr01966a.

Повний текст джерела

Анотація:

In recent years, with the rapid development of transfer technologies related to graphene and other two-dimensional layered materials (2DLMs), graphene sandwiched 2DLMs have been confirmed to be outstanding tunneling and optoelectronic devices.

Стилі APA, Harvard, Vancouver, ISO та ін.

37

Yang, Zhimin, Dongzhi Zhang, and Dongyue Wang. "Carbon monoxide gas sensing properties of metal-organic frameworks-derived tin dioxide nanoparticles/molybdenum diselenide nanoflowers." Sensors and Actuators B: Chemical 304 (February 2020): 127369. http://dx.doi.org/10.1016/j.snb.2019.127369.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

38

Wang, Zhenhong, Bin Zhang, Bing Hu, Zhongjun Li, Chunyang Ma, Yu Chen, Yufeng Song, Han Zhang, Jun Liu, and Guohui Nie. "Two-dimensional tin diselenide nanosheets pretreated with an alkaloid for near- and mid-infrared ultrafast photonics." Photonics Research 8, no. 11 (October 12, 2020): 1687. http://dx.doi.org/10.1364/prj.398203.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

39

Zhang, Hao, Qiannan Pan, Yating Zhang, Yanting Zhang, and Dongzhi Zhang. "High-Performance Sulfur Dioxide Gas Sensor Based on Graphite-Phase Carbon-Nitride-Functionalized tin Diselenide Nanorods Composite." Chemosensors 10, no. 10 (October 8, 2022): 401. http://dx.doi.org/10.3390/chemosensors10100401.

Повний текст джерела

Анотація:

In this paper, a composite of tin diselenide (SnSe2) functionalized by graphite-phase carbon nitride (g-C3N4) was successfully prepared by a hydrothermal method, and was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). These microstructure characterization results verified the successful synthesis of a multilayer g-C3N4/rod-shaped SnSe2 composite. The gas sensitivity results showed that when the g-C3N4 ratio was 30%, the g-C3N4/SnSe2 composite sensor had the highest response (28.9%) at 200 °C to 20 ppm sulfur dioxide (SO2) gas, which was much higher than those of pristine g-C3N4 and SnSe2 sensors at the optimum temperature. A series of comparative experiments proved that the g-C3N4/SnSe2 composite sensor demonstrated an excellent response, strong reversibility and good selectivity for ppm-level SO2 gas detection. The possible SO2 sensing mechanism was ascribed to the heterostructure between the n-type SnSe2 and n-type g-C3N4 nanomaterials. Furthermore, we also proposed the influence of the special structure of the g-C3N4 functionalized SnSe2 composite on the gas-sensing characteristics.

Стилі APA, Harvard, Vancouver, ISO та ін.

40

Poudel, Deewakar, Shankar Karki, Benjamin Belfore, Grace Rajan, Sushma Swaraj Atluri, Sina Soltanmohammad, Angus Rockett, and Sylvain Marsillac. "Degradation Mechanism Due to Water Ingress Effect on the Top Contact of Cu(In,Ga)Se2 Solar Cells." Energies 13, no. 17 (September 2, 2020): 4545. http://dx.doi.org/10.3390/en13174545.

Повний текст джерела

Анотація:

The impact of moisture ingress on the surface of copper indium gallium diselenide (CIGS) solar cells was studied. While industry-scale modules are encapsulated in specialized polymers and glass, over time, the glass can break and the encapsulant can degrade. During such conditions, water can potentially degrade the interior layers and decrease performance. The first layer the water will come in contact with is the transparent conductive oxide (TCO) layer. To simulate the impact of this moisture ingress, complete devices were immersed in deionized water. To identify the potential sources of degradation, a common window layer for CIGS devices—a bilayer of intrinsic zinc oxide (i-ZnO) and conductive indium tin oxide (ITO)—was deposited. The thin films were then analyzed both pre and post water soaking. To determine the extent of ingress, dynamic secondary ion mass spectroscopy (SIMS) was performed on completed devices to analyze impurity diffusion (predominantly sodium and potassium) in the devices. The results were compared to device measurements, and indicated a degradation of device efficiency (mostly fill factor, contrary to previous studies), potentially due to a modification of the alkali profile.

Стилі APA, Harvard, Vancouver, ISO та ін.

41

Selin Tosun, B., Rebekah K. Feist, Aloysius Gunawan, K. Andre Mkhoyan, Stephen A. Campbell, and Eray S. Aydil. "Improving the damp-heat stability of copper indium gallium diselenide solar cells with a semicrystalline tin dioxide overlayer." Solar Energy Materials and Solar Cells 101 (June 2012): 270–76. http://dx.doi.org/10.1016/j.solmat.2012.02.017.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

42

Labisbal, Elena, Jaime Romero, María L. Durán, José A. García-Vázquez, Antonio Sousa, Umberto Russo, Robin Pritchard, and Marcel Renson. "Structure of tin(IV) complexes of 2-(2-selenidophenyl)imino-methylphenols formed by electrochemical cleavage of a diselenide bond." J. Chem. Soc., Dalton Trans., no. 5 (1993): 755–58. http://dx.doi.org/10.1039/dt9930000755.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

43

Zaki, Shrouk E., Mohamed A. Basyooni, Mohammed Tihtih, Walid Belaid, Jamal Eldin F. M. Ibrahim, Mohamed Mostafa Abdelfattah, Amina Houimi, and A. M. Abdelaziz. "Tin diselenide/zirconium disulfide terahertz acoustic multi-layer superlattice for liquid sensing applications of acetonitrile; reconsidering Voigt-Reuss-Hill schemes." Results in Physics 42 (November 2022): 106041. http://dx.doi.org/10.1016/j.rinp.2022.106041.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

44

Selin Tosun, B., Rebekah K. Feist, Stephen A. Campbell, and Eray S. Aydil. "Tin dioxide as an alternative window layer for improving the damp-heat stability of copper indium gallium diselenide solar cells." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30, no. 4 (July 2012): 04D101. http://dx.doi.org/10.1116/1.3692225.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

45

Nasir, Muhammad Salman, Guorui Yang, Iqra Ayub, Xiaojun Wang, Silan Wang, Abdul Nasir, and Wei Yan. "RETRACTED: Tin diselenide nanoflakes decorated hierarchical 1D TiO2 fiber: A robust and highly efficient co-catalyst for hydrogen evolution reaction." Applied Surface Science 521 (August 2020): 146333. http://dx.doi.org/10.1016/j.apsusc.2020.146333.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

46

Mehmood, Rashid, Muhammad Adnan, Muhammad Waseem Imtiaz, Muhammad Shahid, Muddassar Mehboob, Anam Shareef, Atifa Irshad, Shahid Iqbal, and Zain Ul Abideen. "Mechanism and Role of Nanotechnology in Photovoltaic Cells and Applications in Different Industrial Sectors." Scholars Bulletin 8, no. 10 (November 20, 2022): 288–93. http://dx.doi.org/10.36348/sb.2022.v08i10.001.

Повний текст джерела

Анотація:

Nanotechnology is widely used for the manufacturing of photovoltaic (PV) solar cells. Applications of solar technology are based in two forms; lithium-ion and lead-acid. These cells and batteries have the capacity to store a large amount of energy longer than other ordinary batteries. The mechanism for manufacturing solar cells usually arises from the combinations of layers of single-molecule thick sheets of graphene and molybdenum diselenide. In this fact, one of common example is the fine coating of graphene with zinc oxide nanowires. Solar based cells are incorporated into the modified forms for increasing their synthetic applications. These modified forms are copper indium selenide sulfide quantum dots. Perovskite solar cells are dominating in the scientific community due to their advantages and cheap sources of solar energy. These perovskite solar cells are also composed of different metals and other combinations in order to make them functional for different purposes. The most widely implemented metals are germanium, antimony, titanium and barium. Tin (Sn)-based perovskites allow the movement of ions and electrons and significantly in the surrounding environment. There is also need in the future for valuable and mechanical designing for nanotechnolgy and their usage in industrial and commercial applications.

Стилі APA, Harvard, Vancouver, ISO та ін.

47

Mei, Jun, Jing Shang, Chao Zhang, Dongchen Qi, Liangzhi Kou, Binodhya Wijerathne, Chunfeng Hu, Ting Liao, Jennifer MacLeod, and Ziqi Sun. "MAX‐phase Derived Tin Diselenide for 2D/2D Heterostructures with Ultralow Surface/Interface Transport Barriers toward Li‐/Na‐ions Storage (Small Methods 9/2022)." Small Methods 6, no. 9 (September 2022): 2270055. http://dx.doi.org/10.1002/smtd.202270055.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

48

Xu, Tongtong, Yaping Han, Lei Lin, Jie Xu, Qiang Fu, He He, Bingqian Song, Qiying Gai, and Xianjie Wang. "Self-power position-sensitive detector with fast optical relaxation time and large position sensitivity basing on the lateral photovoltaic effect in tin diselenide films." Journal of Alloys and Compounds 790 (June 2019): 941–46. http://dx.doi.org/10.1016/j.jallcom.2019.03.293.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

49

Nasir, Muhammad Salman, Guorui Yang, Iqra Ayub, Xiaojun Wang, Silan Wang, Abdul Nasir, and Wei Yan. "Retraction notice to “Tin diselenide nanoflakes decorated hierarchical 1D TiO2 fiber: A robust and highly efficient co-catalyst for hydrogen evolution reaction” [Appl. Surf. Sci. 521 (2020) 146333]." Applied Surface Science 542 (March 2021): 148694. http://dx.doi.org/10.1016/j.apsusc.2020.148694.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

50

Amini, Moharam, Kamran Torabi, Loghman Jamilpanah, and Seyed Majid Mohseni. "(Digital Presentation) Electronic and Optical GAP Evaluation By Oxygen Tuning in MOSE₂." ECS Meeting Abstracts MA2022-01, no. 22 (July 7, 2022): 1125. http://dx.doi.org/10.1149/ma2022-01221125mtgabs.

Повний текст джерела

Анотація:

In this study, a simple and fast electrochemical method was employed to synthesis molybdenum diselenide thin film. Molybdenum diselenide films have been electrodeposited on FTO substrates from an ammoniacal solution of H2MoO4 and SeO2. We fabricated thin films composed of MoSe2, MoO2 and MoO3 elements by adjusting some electrodeposition factors, e.g., deposition time and potential. The Structural characterizations of the electrodeposited films were investigated by SEM, Scanning tunneling spectroscopy (STS), Raman spectroscopy and UV-Visible spectroscopy. And also, Electronic and optical gap have been measured by STS and UV-Vis spectra, respectively.

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!