Готові списки джерел за темами / Tin diselenide

Добірка наукової літератури з теми "Tin diselenide"

Автор: Grafiati
Опубліковано: 6 вересня 2023

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Статті в журналах з теми "Tin diselenide"

1

Kushkhov, A. R., D. S. Gaev, O. I. Rabinovich, and A. G. Stolyarov. "Tin diselenide quantum-sized island films." Crystallography Reports 57, no. 2 (March 2012): 288–91. http://dx.doi.org/10.1134/s1063774512010063.

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2

El-Nahass, M. M. "Optical properties of tin diselenide films." Journal of Materials Science 27, no. 24 (1992): 6597–604. http://dx.doi.org/10.1007/bf01165942.

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3

Grosse, Corinna, Matti B. Alemayehu, Anna Mogilatenko, Olivio Chiatti, David C. Johnson, and Saskia F. Fischer. "Superconducting Tin Selenide/Niobium Diselenide Ferecrystals†." Crystal Research and Technology 52, no. 10 (September 27, 2017): 1700126. http://dx.doi.org/10.1002/crat.201700126.

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4

Peng, Hongrui, and Jin Huang. "Synthesis and Characterization of Tin Diselenide Nanosheets." Journal of Dispersion Science and Technology 28, no. 8 (October 2007): 1187–89. http://dx.doi.org/10.1080/01932690701527755.

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5

Yu, Peng, Xuechao Yu, Wanglin Lu, Hsin Lin, Linfeng Sun, Kezhao Du, Fucai Liu, et al. "Fast Photoresponse from 1T Tin Diselenide Atomic Layers." Advanced Functional Materials 26, no. 1 (November 19, 2015): 137–45. http://dx.doi.org/10.1002/adfm.201503789.

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6

Urmila, K. S., T. Namitha Asokan, and B. Pradeep. "Structural and optical characterization of reactive evaporated tin diselenide thin films." IOP Conference Series: Materials Science and Engineering 73 (February 17, 2015): 012058. http://dx.doi.org/10.1088/1757-899x/73/1/012058.

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7

Achimovičová, Marcela, Klebson Lucenildo da Silva, Nina Daneu, Aleksander Rečnik, Sylvio Indris, Holger Hain, Marco Scheuermann, Horst Hahn, and Vladimír Šepelák. "Structural and morphological study of mechanochemically synthesized tin diselenide." Journal of Materials Chemistry 21, no. 16 (2011): 5873. http://dx.doi.org/10.1039/c1jm10330j.

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8

Liu, Jishu, Xiaohui Li, Yixuan Guo, Abdual Qyyum, and Zhaojiang Shi. "Emerging 2D Semiconducting Materials: Tin Diselenide for Ultrafast Photonics." Annalen der Physik 532, no. 5 (March 9, 2020): 1900590. http://dx.doi.org/10.1002/andp.201900590.

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9

Zhang, Yu, Yu Liu, Khak Ho Lim, Congcong Xing, Mengyao Li, Ting Zhang, Pengyi Tang, et al. "Tin Diselenide Molecular Precursor for Solution-Processable Thermoelectric Materials." Angewandte Chemie 130, no. 52 (November 25, 2018): 17309–14. http://dx.doi.org/10.1002/ange.201809847.

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Zhang, Yu, Yu Liu, Khak Ho Lim, Congcong Xing, Mengyao Li, Ting Zhang, Pengyi Tang, et al. "Tin Diselenide Molecular Precursor for Solution-Processable Thermoelectric Materials." Angewandte Chemie International Edition 57, no. 52 (November 25, 2018): 17063–68. http://dx.doi.org/10.1002/anie.201809847.

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Дисертації з теми "Tin diselenide"

1

Huen, Yin-fan Denis, and 禤彥勳. "Ultraviolet photoemission spectroscopy study of transition metal diselenide cystalline thin films." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2014. http://hdl.handle.net/10722/211146.

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2

Lee, Jinwoo. "Metastability of copper indium gallium diselenide polycrystalline thin film solar cell devices /." Connect to title online (Scholars' Bank) Connect to title online (ProQuest), 2008. http://hdl.handle.net/1794/8588.

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Анотація:
Thesis (Ph. D.)--University of Oregon, 2008.
Typescript. Includes vita and abstract. Includes bibliographical references (leaves 112-117). Also available online in Scholars' Bank; and in ProQuest, free to University of Oregon users.
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3

Bagnall, Darren Marc. "The fabrication and characterisation of thin film copper indium (gallium) diselenide." Thesis, University of Salford, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.262675.

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4

Lee, Jinwoo 1973. "Metastability of copper indium gallium diselenide polycrystalline thin film solar cell devices." Thesis, University of Oregon, 2008. http://hdl.handle.net/1794/8588.

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Анотація:
xvi, 117 p. ; ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number.
High efficiency thin film solar cells have the potential for being a world energy solution because of their cost-effectiveness. Looking to the future of solar energy, there is the opportunity and challenge for thin film solar cells. The main theme of this research is to develop a detailed understanding of electronically active defect states and their role in limiting device performance in copper indium gallium diselenide (CIGS) solar cells. Metastability in the CIGS is a good tool to manipulate electronic defect density and thus identify its effect on the device performance. Especially, this approach keeps many device parameters constant, including the chemical composition, grain size, and interface layers. Understanding metastability is likely to lead to the improvement of CIGS solar cells. We observed systematic changes in CIGS device properties as a result of the metastable changes, such as increases in sub-bandgap defect densities and decreases in hole carrier mobilities. Metastable changes were characterized using high frequency admittance spectroscopy, drive-level capacitance profiling (DLCP), and current-voltage measurements. We found two distinctive capacitance steps in the high frequency admittance spectra that correspond to (1) the thermal activation of hole carriers into/out of acceptor defect and (2) a temperature-independent dielectric relaxation freeze-out process and an equivalent circuit analysis was employed to deduce the dielectric relaxation time. Finally, hole carrier mobility was deduced once hole carrier density was determined by DLCP method. We found that metastable defect creation in CIGS films can be made either by light-soaking or with forward bias current injection. The deep acceptor density and the hole carrier density were observed to increase in a 1:1 ratio, which seems to be consistent with the theoretical model of V Cu -V Se defect complex suggested by Lany and Zunger. Metastable defect creation kinetics follows a sub-linear power law in time and intensity. Numerical simulation using SCAPS-1D strongly supports a compensated donor- acceptor conversion model for the experimentally observed metastable changes in CIGS. This detailed numerical modeling yielded qualitative and quantitative agreement even for a specially fabricated bifacial CIGS solar cell. Finally, the influence of reduced hole carrier mobility and its role in limiting device performance was investigated.
Adviser: J. David Cohen
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5

Halverson, Adam Fraser. "The role of sulfur alloying in defects and transitions in copper indium gallium diselenide disulfide thin films /." Connect to title online (Scholars' Bank) Connect to title online (ProQuest), 2007. http://hdl.handle.net/1794/6193.

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Анотація:
Thesis (Ph. D.)--University of Oregon, 2007.
Typescript. Includes vita and abstract. Includes bibliographical references (leaves 127-132). Also available online in Scholars' Bank; and in ProQuest, free to University of Oregon users.
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6

Heath, Jennifer Theresa. "Electronic transitions in the bandgap of copper indium gallium diselenide polycrystalline thin films /." view abstract or download file of text, 2002. http://wwwlib.umi.com/cr/uoregon/fullcit?p3072587.

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Анотація:
Thesis (Ph. D.)--University of Oregon, 2002.
Typescript. Includes vita and abstract. Includes bibliographical references (leaves 143-148). Also available for download via the World Wide Web; free to University of Oregon users.
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7

Thompson, John O. "The importance of elemental stacking order and layer thickness in controlling the formation kinetics of copper indium diselenide /." Connect to title online (Scholars' Bank) Connect to title online (ProQuest), 2007. http://hdl.handle.net/1794/6197.

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Анотація:
Thesis (Ph. D.)--University of Oregon, 2007.
Typescript. Includes vita and abstract. Includes bibliographical references (leaves 81-84). Also available online in Scholars' Bank; and in ProQuest, free to University of Oregon users.
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8

Hite, Omar. "Controlling the Charge Density Wave in VSE2 Containing Heterostructures." Thesis, University of Oregon, 2018. http://hdl.handle.net/1794/23179.

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Анотація:
Exploring the properties of layered materials as a function of thickness has largely been limited to semiconducting materials as thin layers of metallic materials tend to oxidize readily in atmosphere. This makes it challenging to further understand properties such as superconductivity and charge density waves as a function of layer thickness that are unique to metallic compounds. This dissertation discusses a set of materials that use the modulated elemental reactants technique to isolate 1 to 3 layers of VSe2 in a superlattice in order to understand the role of adjacent layers and VSe2 thickness on the charge density wave in VSe2. The modulated elemental reactants technique was performed on a custom built physical vapor deposition to prepare designed precursors that upon annealing will self assemble into the desired heterostructure. First, a series of (PbSe)1+δ(VSe2)n for n = 1 – 3 were synthesized to explore if the charge density wave enhancement in the isovalent (SnSe)1.15VSe2 was unique to this particular heterostructure. Electrical resistivity measurements show a large change in resistivity compared to room temperature resistivity for the n = 1 heterostructure. The overall change in resistivity was larger than what was observed in the analogous SnSe heterostructure. v A second study was conducted on (BiSe)1+δVSe2 to further understand the effect of charge transfer on the charge density wave of VSe2. It was reported that BiSe forms a distorted rocksalt layer with antiphase boundaries. The resulting electrical resistivity showed a severely dampened charge density wave when compared to both analogous SnSe and PbSe containing heterostructures but was similar to bulk. Finally, (SnSe2)1+δVSe2 was prepared to further isolate the VSe2 layers and explore interfacial effects on the charge density wave by switching from a distorted rocksalt structure to 1T-SnSe2. SnSe2 is semiconductor that is used to prevent adjacent VSe2 layers from coupling and thereby enhancing the quasi two-dimensionality of the VSe2 layer. Electrical characterization shows behavior similar to that of SnSe and PbSe containing heterostructures. However, structural characterization shows the presence of a SnSe impurity that is likely influencing the overall temperature dependent resistivity. This dissertation includes previously published and unpublished co-authored materials.
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9

Halverson, Adam Fraser 1978. "The role of sulfur alloying in defects and transitions in copper indium gallium diselenide disulfide thin films." Thesis, University of Oregon, 2007. http://hdl.handle.net/1794/6193.

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Анотація:
xv, 132 p. : ill. A print copy of this title is available from the UO Libraries, under the call number: SCIENCE TK7871.15.F5 H325 2007
The effects of sulfur alloying on the electronic properties of CuIn(SeS) 2 and CuInGa(SeS) 2 materials has been investigated using sophisticated junction capacitance techniques including drive-level capacitance profiling and transient photocapacitance and photocurrent spectroscopies. CISSe and CIGSSe materials are used as absorber layers in thin-film photovoltaic devices. By characterizing the electronic properties of these materials we hope to understand how these materials can be improved to make thin-film devices with better conversion efficiencies. Sulfur widens the bandgap of these materials by moving the valence band to lower energies and the conduction band to higher energies. This significantly affects the electronic structure of these devices by increasing the activation energies of dominant acceptor levels and lowering room temperature free hole carrier densities. Using optical spectroscopies we observe a large, broad defect that also changes its apparent energetic depth with sulfur alloying. The occupation of this defect was controlled both optically and thermally, and showed a striking temperature dependence. This temperature dependence was measured by recording the relative defect signal, the ratio of the TPC signal in the defect regime to the above bandgap regime, as a function of temperature. As the temperature of the measurement was decreased, steps in the relative defect signal were observed, indicating the turning off of the thermal pathway that emptied trapped charge from the defect. Remarkably, such steps were seen at the same temperature in CISSe and CIGSSe devices with similar sulfur content. In addition, no steps were seen in CMS devices. This points to a defect state specific to the incorporation of sulfur in the absorber material. We hope that a better understanding of the electronic structure of these materials will assist in the creation of improved wide-bandgap thin-film photovoltaic devices.
Adviser: J. David Cohen
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10

Wang, Xuege. "Pulsed laser annealing and rapid thermal annealing of copper-indium-gallium-diselenide-based thin-film solar cells." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0011372.

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Книги з теми "Tin diselenide"

1

Bagnall, Darren Marc. The fabrication and characterisation of thin film copper indium (gallium) diselenide. Salford: Universityof Salford, 1995.

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Частини книг з теми "Tin diselenide"

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Mohan, Raja, and Rini Paulose. "Brief Review on Copper Indium Gallium Diselenide (CIGS) Solar Cells." In Photoenergy and Thin Film Materials, 157–92. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2019. http://dx.doi.org/10.1002/9781119580546.ch4.

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2

Aissat, A., A. Bahi Azzououm, F. Benyettou, and A. Laidouci. "Optimization of Copper Indium Gallium Diselenide Thin Film Solar Cell (CIGS)." In Artificial Intelligence in Renewable Energetic Systems, 479–85. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-73192-6_50.

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3

Kumar, Vishvas, Rajendra Prasad, Nandu B. Chaure, and Udai P. Singh. "Advancement in Copper Indium Gallium Diselenide (CIGS)-Based Thin-Film Solar Cells." In Advances in Sustainability Science and Technology, 5–39. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3724-8_2.

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4

Frantz, J. A., R. Y. Bekele, J. D. Myers, V. Q. Nguyen, A. Bruce, S. V. Frolov, M. Cyrus, and J. S. Sanghera. "Growth Dynamics in Thin Films of Copper Indium Gallium Diselenide Sputtered from a Quaternary Target." In Ceramic Transactions Series, 303–12. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118585160.ch28.

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Тези доповідей конференцій з теми "Tin diselenide"

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Biswas, Rabindra, Medha Dandu, Asish Prosad, Sruti Menon, Kausik Majumdar, and Varun Raghunathan. "Observation of second harmonic generation from multilayer Tin diselenide." In 2019 International Conference on Optical MEMS and Nanophotonics (OMN). IEEE, 2019. http://dx.doi.org/10.1109/omn.2019.8925139.

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2

Li, Mingda Oscar, Shudong Xiao, Rusen Yan, Suresh Vishwanath, Susan Fullerton-Shirey, Debdeep Jena, and Huili Grace Xing. "Fermi level tunability of a novel 2D crystal: Tin Diselenide (SnSe2)." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548473.

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3

Anand, T. Joseph S., T. Mahalingam, C. Sanjeevi Raja, M. Jayachandran, and Mary J. Chockalingam. "Molybdenum diselenide thin films prepared by electrodeposition technique." In SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, edited by Carl M. Lampert and Claes-Goeran Granqvist. SPIE, 1999. http://dx.doi.org/10.1117/12.367559.

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4

Day, Allan E., and J. S. Zabinski. "Pulsed-laser deposition of niobium diselenide thin films." In Laser ablation: mechanisms and applications—II. AIP, 1993. http://dx.doi.org/10.1063/1.44862.

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5

Rokke, David J., Kyle G. Weideman, Anna Murray, and Rakesh Agrawal. "Synthesis and Characterization of Solution Processed Silver Indium Diselenide Thin Films." In 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). IEEE, 2021. http://dx.doi.org/10.1109/pvsc43889.2021.9518774.

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6

Sharma, Sumit, Akshay Moudgil, Prashant Mishra, and Samaresh Das. "Platinum Diselenide Thin-film based Field Effect Transistor for Ammonia Detection." In 2020 5th IEEE International Conference on Emerging Electronics (ICEE). IEEE, 2020. http://dx.doi.org/10.1109/icee50728.2020.9777024.

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7

Zhang, Martin Y., and Gary J. Cheng. "Direct pulsed laser crystallization of copper indium diselenide nanocrystal thin films for photovoltaics." In 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6186538.

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8

Reinhard, Manuel, Ralph Eckstein, Paul Sonntag, Linda Burkert, Bernhard Dimmler, Uli Lemmer, and Alexander Colsmann. "Solution-processed electrodes for efficient hybrid copper indium gallium diselenide thin film solar cells." In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6745139.

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Knowles, A., H. Oumous, M. J. Carter, and R. Hill. "Properties of copper indium diselenide thin films produced by thermal annealing of elemental sandwich structures." In Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105956.

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Bottenberg, W. R., and D. Reinker. "Outdoor performance of hybrid, four-terminal tandem photovoltaic modules based on thin film silicon:hydrogen and copper indium diselenide." In Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105901.

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Звіти організацій з теми "Tin diselenide"

1

Steinberger, H., W. Thumm, R. Freitag, P. D. Moskowitz, and R. Chapin. Environmental and health aspects of copper-indium-diselenide thin-film photovoltaic modules. Office of Scientific and Technical Information (OSTI), December 1994. http://dx.doi.org/10.2172/46644.

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Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet). Office of Scientific and Technical Information (OSTI), June 2011. http://dx.doi.org/10.2172/1016420.

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