Добірка наукової літератури з теми "Tin diselenide"
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Статті в журналах з теми "Tin diselenide"
Kushkhov, A. R., D. S. Gaev, O. I. Rabinovich, and A. G. Stolyarov. "Tin diselenide quantum-sized island films." Crystallography Reports 57, no. 2 (March 2012): 288–91. http://dx.doi.org/10.1134/s1063774512010063.
Повний текст джерелаEl-Nahass, M. M. "Optical properties of tin diselenide films." Journal of Materials Science 27, no. 24 (1992): 6597–604. http://dx.doi.org/10.1007/bf01165942.
Повний текст джерелаGrosse, Corinna, Matti B. Alemayehu, Anna Mogilatenko, Olivio Chiatti, David C. Johnson, and Saskia F. Fischer. "Superconducting Tin Selenide/Niobium Diselenide Ferecrystals†." Crystal Research and Technology 52, no. 10 (September 27, 2017): 1700126. http://dx.doi.org/10.1002/crat.201700126.
Повний текст джерелаPeng, Hongrui, and Jin Huang. "Synthesis and Characterization of Tin Diselenide Nanosheets." Journal of Dispersion Science and Technology 28, no. 8 (October 2007): 1187–89. http://dx.doi.org/10.1080/01932690701527755.
Повний текст джерелаYu, Peng, Xuechao Yu, Wanglin Lu, Hsin Lin, Linfeng Sun, Kezhao Du, Fucai Liu, et al. "Fast Photoresponse from 1T Tin Diselenide Atomic Layers." Advanced Functional Materials 26, no. 1 (November 19, 2015): 137–45. http://dx.doi.org/10.1002/adfm.201503789.
Повний текст джерелаUrmila, K. S., T. Namitha Asokan, and B. Pradeep. "Structural and optical characterization of reactive evaporated tin diselenide thin films." IOP Conference Series: Materials Science and Engineering 73 (February 17, 2015): 012058. http://dx.doi.org/10.1088/1757-899x/73/1/012058.
Повний текст джерелаAchimovičová, Marcela, Klebson Lucenildo da Silva, Nina Daneu, Aleksander Rečnik, Sylvio Indris, Holger Hain, Marco Scheuermann, Horst Hahn, and Vladimír Šepelák. "Structural and morphological study of mechanochemically synthesized tin diselenide." Journal of Materials Chemistry 21, no. 16 (2011): 5873. http://dx.doi.org/10.1039/c1jm10330j.
Повний текст джерелаLiu, Jishu, Xiaohui Li, Yixuan Guo, Abdual Qyyum, and Zhaojiang Shi. "Emerging 2D Semiconducting Materials: Tin Diselenide for Ultrafast Photonics." Annalen der Physik 532, no. 5 (March 9, 2020): 1900590. http://dx.doi.org/10.1002/andp.201900590.
Повний текст джерелаZhang, Yu, Yu Liu, Khak Ho Lim, Congcong Xing, Mengyao Li, Ting Zhang, Pengyi Tang, et al. "Tin Diselenide Molecular Precursor for Solution-Processable Thermoelectric Materials." Angewandte Chemie 130, no. 52 (November 25, 2018): 17309–14. http://dx.doi.org/10.1002/ange.201809847.
Повний текст джерелаZhang, Yu, Yu Liu, Khak Ho Lim, Congcong Xing, Mengyao Li, Ting Zhang, Pengyi Tang, et al. "Tin Diselenide Molecular Precursor for Solution-Processable Thermoelectric Materials." Angewandte Chemie International Edition 57, no. 52 (November 25, 2018): 17063–68. http://dx.doi.org/10.1002/anie.201809847.
Повний текст джерелаДисертації з теми "Tin diselenide"
Huen, Yin-fan Denis, and 禤彥勳. "Ultraviolet photoemission spectroscopy study of transition metal diselenide cystalline thin films." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2014. http://hdl.handle.net/10722/211146.
Повний текст джерелаLee, Jinwoo. "Metastability of copper indium gallium diselenide polycrystalline thin film solar cell devices /." Connect to title online (Scholars' Bank) Connect to title online (ProQuest), 2008. http://hdl.handle.net/1794/8588.
Повний текст джерелаTypescript. Includes vita and abstract. Includes bibliographical references (leaves 112-117). Also available online in Scholars' Bank; and in ProQuest, free to University of Oregon users.
Bagnall, Darren Marc. "The fabrication and characterisation of thin film copper indium (gallium) diselenide." Thesis, University of Salford, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.262675.
Повний текст джерелаLee, Jinwoo 1973. "Metastability of copper indium gallium diselenide polycrystalline thin film solar cell devices." Thesis, University of Oregon, 2008. http://hdl.handle.net/1794/8588.
Повний текст джерелаHigh efficiency thin film solar cells have the potential for being a world energy solution because of their cost-effectiveness. Looking to the future of solar energy, there is the opportunity and challenge for thin film solar cells. The main theme of this research is to develop a detailed understanding of electronically active defect states and their role in limiting device performance in copper indium gallium diselenide (CIGS) solar cells. Metastability in the CIGS is a good tool to manipulate electronic defect density and thus identify its effect on the device performance. Especially, this approach keeps many device parameters constant, including the chemical composition, grain size, and interface layers. Understanding metastability is likely to lead to the improvement of CIGS solar cells. We observed systematic changes in CIGS device properties as a result of the metastable changes, such as increases in sub-bandgap defect densities and decreases in hole carrier mobilities. Metastable changes were characterized using high frequency admittance spectroscopy, drive-level capacitance profiling (DLCP), and current-voltage measurements. We found two distinctive capacitance steps in the high frequency admittance spectra that correspond to (1) the thermal activation of hole carriers into/out of acceptor defect and (2) a temperature-independent dielectric relaxation freeze-out process and an equivalent circuit analysis was employed to deduce the dielectric relaxation time. Finally, hole carrier mobility was deduced once hole carrier density was determined by DLCP method. We found that metastable defect creation in CIGS films can be made either by light-soaking or with forward bias current injection. The deep acceptor density and the hole carrier density were observed to increase in a 1:1 ratio, which seems to be consistent with the theoretical model of V Cu -V Se defect complex suggested by Lany and Zunger. Metastable defect creation kinetics follows a sub-linear power law in time and intensity. Numerical simulation using SCAPS-1D strongly supports a compensated donor- acceptor conversion model for the experimentally observed metastable changes in CIGS. This detailed numerical modeling yielded qualitative and quantitative agreement even for a specially fabricated bifacial CIGS solar cell. Finally, the influence of reduced hole carrier mobility and its role in limiting device performance was investigated.
Adviser: J. David Cohen
Halverson, Adam Fraser. "The role of sulfur alloying in defects and transitions in copper indium gallium diselenide disulfide thin films /." Connect to title online (Scholars' Bank) Connect to title online (ProQuest), 2007. http://hdl.handle.net/1794/6193.
Повний текст джерелаTypescript. Includes vita and abstract. Includes bibliographical references (leaves 127-132). Also available online in Scholars' Bank; and in ProQuest, free to University of Oregon users.
Heath, Jennifer Theresa. "Electronic transitions in the bandgap of copper indium gallium diselenide polycrystalline thin films /." view abstract or download file of text, 2002. http://wwwlib.umi.com/cr/uoregon/fullcit?p3072587.
Повний текст джерелаTypescript. Includes vita and abstract. Includes bibliographical references (leaves 143-148). Also available for download via the World Wide Web; free to University of Oregon users.
Thompson, John O. "The importance of elemental stacking order and layer thickness in controlling the formation kinetics of copper indium diselenide /." Connect to title online (Scholars' Bank) Connect to title online (ProQuest), 2007. http://hdl.handle.net/1794/6197.
Повний текст джерелаTypescript. Includes vita and abstract. Includes bibliographical references (leaves 81-84). Also available online in Scholars' Bank; and in ProQuest, free to University of Oregon users.
Hite, Omar. "Controlling the Charge Density Wave in VSE2 Containing Heterostructures." Thesis, University of Oregon, 2018. http://hdl.handle.net/1794/23179.
Повний текст джерелаHalverson, Adam Fraser 1978. "The role of sulfur alloying in defects and transitions in copper indium gallium diselenide disulfide thin films." Thesis, University of Oregon, 2007. http://hdl.handle.net/1794/6193.
Повний текст джерелаThe effects of sulfur alloying on the electronic properties of CuIn(SeS) 2 and CuInGa(SeS) 2 materials has been investigated using sophisticated junction capacitance techniques including drive-level capacitance profiling and transient photocapacitance and photocurrent spectroscopies. CISSe and CIGSSe materials are used as absorber layers in thin-film photovoltaic devices. By characterizing the electronic properties of these materials we hope to understand how these materials can be improved to make thin-film devices with better conversion efficiencies. Sulfur widens the bandgap of these materials by moving the valence band to lower energies and the conduction band to higher energies. This significantly affects the electronic structure of these devices by increasing the activation energies of dominant acceptor levels and lowering room temperature free hole carrier densities. Using optical spectroscopies we observe a large, broad defect that also changes its apparent energetic depth with sulfur alloying. The occupation of this defect was controlled both optically and thermally, and showed a striking temperature dependence. This temperature dependence was measured by recording the relative defect signal, the ratio of the TPC signal in the defect regime to the above bandgap regime, as a function of temperature. As the temperature of the measurement was decreased, steps in the relative defect signal were observed, indicating the turning off of the thermal pathway that emptied trapped charge from the defect. Remarkably, such steps were seen at the same temperature in CISSe and CIGSSe devices with similar sulfur content. In addition, no steps were seen in CMS devices. This points to a defect state specific to the incorporation of sulfur in the absorber material. We hope that a better understanding of the electronic structure of these materials will assist in the creation of improved wide-bandgap thin-film photovoltaic devices.
Adviser: J. David Cohen
Wang, Xuege. "Pulsed laser annealing and rapid thermal annealing of copper-indium-gallium-diselenide-based thin-film solar cells." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0011372.
Повний текст джерелаКниги з теми "Tin diselenide"
Bagnall, Darren Marc. The fabrication and characterisation of thin film copper indium (gallium) diselenide. Salford: Universityof Salford, 1995.
Знайти повний текст джерелаЧастини книг з теми "Tin diselenide"
Mohan, Raja, and Rini Paulose. "Brief Review on Copper Indium Gallium Diselenide (CIGS) Solar Cells." In Photoenergy and Thin Film Materials, 157–92. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2019. http://dx.doi.org/10.1002/9781119580546.ch4.
Повний текст джерелаAissat, A., A. Bahi Azzououm, F. Benyettou, and A. Laidouci. "Optimization of Copper Indium Gallium Diselenide Thin Film Solar Cell (CIGS)." In Artificial Intelligence in Renewable Energetic Systems, 479–85. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-73192-6_50.
Повний текст джерелаKumar, Vishvas, Rajendra Prasad, Nandu B. Chaure, and Udai P. Singh. "Advancement in Copper Indium Gallium Diselenide (CIGS)-Based Thin-Film Solar Cells." In Advances in Sustainability Science and Technology, 5–39. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3724-8_2.
Повний текст джерелаFrantz, J. A., R. Y. Bekele, J. D. Myers, V. Q. Nguyen, A. Bruce, S. V. Frolov, M. Cyrus, and J. S. Sanghera. "Growth Dynamics in Thin Films of Copper Indium Gallium Diselenide Sputtered from a Quaternary Target." In Ceramic Transactions Series, 303–12. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118585160.ch28.
Повний текст джерелаТези доповідей конференцій з теми "Tin diselenide"
Biswas, Rabindra, Medha Dandu, Asish Prosad, Sruti Menon, Kausik Majumdar, and Varun Raghunathan. "Observation of second harmonic generation from multilayer Tin diselenide." In 2019 International Conference on Optical MEMS and Nanophotonics (OMN). IEEE, 2019. http://dx.doi.org/10.1109/omn.2019.8925139.
Повний текст джерелаLi, Mingda Oscar, Shudong Xiao, Rusen Yan, Suresh Vishwanath, Susan Fullerton-Shirey, Debdeep Jena, and Huili Grace Xing. "Fermi level tunability of a novel 2D crystal: Tin Diselenide (SnSe2)." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548473.
Повний текст джерелаAnand, T. Joseph S., T. Mahalingam, C. Sanjeevi Raja, M. Jayachandran, and Mary J. Chockalingam. "Molybdenum diselenide thin films prepared by electrodeposition technique." In SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, edited by Carl M. Lampert and Claes-Goeran Granqvist. SPIE, 1999. http://dx.doi.org/10.1117/12.367559.
Повний текст джерелаDay, Allan E., and J. S. Zabinski. "Pulsed-laser deposition of niobium diselenide thin films." In Laser ablation: mechanisms and applications—II. AIP, 1993. http://dx.doi.org/10.1063/1.44862.
Повний текст джерелаRokke, David J., Kyle G. Weideman, Anna Murray, and Rakesh Agrawal. "Synthesis and Characterization of Solution Processed Silver Indium Diselenide Thin Films." In 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). IEEE, 2021. http://dx.doi.org/10.1109/pvsc43889.2021.9518774.
Повний текст джерелаSharma, Sumit, Akshay Moudgil, Prashant Mishra, and Samaresh Das. "Platinum Diselenide Thin-film based Field Effect Transistor for Ammonia Detection." In 2020 5th IEEE International Conference on Emerging Electronics (ICEE). IEEE, 2020. http://dx.doi.org/10.1109/icee50728.2020.9777024.
Повний текст джерелаZhang, Martin Y., and Gary J. Cheng. "Direct pulsed laser crystallization of copper indium diselenide nanocrystal thin films for photovoltaics." In 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6186538.
Повний текст джерелаReinhard, Manuel, Ralph Eckstein, Paul Sonntag, Linda Burkert, Bernhard Dimmler, Uli Lemmer, and Alexander Colsmann. "Solution-processed electrodes for efficient hybrid copper indium gallium diselenide thin film solar cells." In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6745139.
Повний текст джерелаKnowles, A., H. Oumous, M. J. Carter, and R. Hill. "Properties of copper indium diselenide thin films produced by thermal annealing of elemental sandwich structures." In Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105956.
Повний текст джерелаBottenberg, W. R., and D. Reinker. "Outdoor performance of hybrid, four-terminal tandem photovoltaic modules based on thin film silicon:hydrogen and copper indium diselenide." In Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105901.
Повний текст джерелаЗвіти організацій з теми "Tin diselenide"
Steinberger, H., W. Thumm, R. Freitag, P. D. Moskowitz, and R. Chapin. Environmental and health aspects of copper-indium-diselenide thin-film photovoltaic modules. Office of Scientific and Technical Information (OSTI), December 1994. http://dx.doi.org/10.2172/46644.
Повний текст джерелаPolycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet). Office of Scientific and Technical Information (OSTI), June 2011. http://dx.doi.org/10.2172/1016420.
Повний текст джерела