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Статті в журналах з теми "Three-phase SiC Inverter"
Kranzer, Dirk, Florian Reiners, Christian Wilhelm, and Bruno Burger. "System Improvements of Photovoltaic Inverters with SiC-Transistors." Materials Science Forum 645-648 (April 2010): 1171–76. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1171.
Повний текст джерелаKim, Jaechang, Sangshin Kwak, and Seungdeog Choi. "Impacts of SiC-MOSFET Gate Oxide Degradation on Three-Phase Voltage and Current Source Inverters." Machines 10, no. 12 (December 9, 2022): 1194. http://dx.doi.org/10.3390/machines10121194.
Повний текст джерелаCosta, Pedro, Sónia Pinto, and José Fernando Silva. "A Novel Analytical Formulation of SiC-MOSFET Losses to Size High-Efficiency Three-Phase Inverters." Energies 16, no. 2 (January 11, 2023): 818. http://dx.doi.org/10.3390/en16020818.
Повний текст джерелаYang and Choi. "Power Efficiency Improvement of Three-Phase Split-Output Inverter Using Magnetically Coupled Inductor Switching." Electronics 8, no. 9 (August 30, 2019): 969. http://dx.doi.org/10.3390/electronics8090969.
Повний текст джерелаAbdalgader, Ibrahim A. S., Sinan Kivrak, and Tolga Özer. "Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications." Micromachines 13, no. 2 (February 17, 2022): 313. http://dx.doi.org/10.3390/mi13020313.
Повний текст джерелаColmenares, Juan, Diane-Perle Sadik, Patrik Hilber, and Hans-Peter Nee. "Reliability Analysis of a High-Efficiency SiC Three-Phase Inverter." IEEE Journal of Emerging and Selected Topics in Power Electronics 4, no. 3 (September 2016): 996–1006. http://dx.doi.org/10.1109/jestpe.2016.2551980.
Повний текст джерелаLee, Heng, Chun Kai Liu, and Tao Chih Chang. "The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter." Materials Science Forum 1004 (July 2020): 1045–53. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1045.
Повний текст джерелаSasaki, Kensuke, Shinji Sato, Kohei Matsui, Yoshinori Murakami, Satoshi Tanimoto, and Hidekazu Tanisawa. "40 kW/L High Switching Frequency Three-Phase AC 400 V All-SiC Inverter." Materials Science Forum 740-742 (January 2013): 1081–84. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1081.
Повний текст джерелаdi Benedetto, Marco, Luca Bigarelli, Alessandro Lidozzi, and Luca Solero. "Efficiency Comparison of 2-Level SiC Inverter and Soft Switching-Snubber SiC Inverter for Electric Motor Drives." Energies 14, no. 6 (March 18, 2021): 1690. http://dx.doi.org/10.3390/en14061690.
Повний текст джерелаCougo, Bernardo, Lenin Morais, Gilles Segond, Raphael Riva, and Hoan Tran Duc. "Influence of PWM Methods on Semiconductor Losses and Thermal Cycling of 15-kVA Three-Phase SiC Inverter for Aircraft Applications." Electronics 9, no. 4 (April 7, 2020): 620. http://dx.doi.org/10.3390/electronics9040620.
Повний текст джерелаДисертації з теми "Three-phase SiC Inverter"
Muhsen, Hani. "Three-Phase Voltage Source Inverter with Very High Efficiency Based on SiC Devices." Doctoral thesis, Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-199329.
Повний текст джерелаGuo, Wilson. "CONDUCTED EMISSION STUDY ON SI AND SIC POWER DEVICES." Miami University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=miami1557701342593551.
Повний текст джерелаAlves, rodrigues Luis Gabriel. "Design and characterization of a three-phase current source inverter using 1.7kV SiC power devices for photovoltaic applications." Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAT030.
Повний текст джерелаClassically, the energy conversion architecture found in photovoltaic (PV) power plants comprises a multitude of solar arrays delivering a maximum voltage of 1kV followed by a step-up chopper connected to a three-phase voltage source inverter. This two-stage conversion system (DC/DC + DC/AC) is then connected to the MV grid through a LV/MV transformer. In order to simplify the PV systems, this research work focuses on the study and implementation of a DC/AC topology employing a single conversion stage: the three-phase current source inverter (CSI). Although relatively simple, the CSI presents as major drawback the conduction losses. To deal with this problem, wide-bandgap silicon carbide (SiC) semiconductors are used, which allows to efficiently convert energy (η> 98.5%) while keeping a relatively high switching frequency (several tens of kHz). Nonetheless, since the available power semiconductor modules on the market are not compatible with the CSI, a novel 1.7kV SiC-based module is developed in the context of the thesis. Thus, the dynamic characterization of the new SiC device is carried out and serves as a basis for the design of a 60kW Current Source Inverter prototype. Finally, the inverter’s semiconductor efficiency is evaluated through a calorimetric method, confirming the ability of the topology to operate at higher switching frequencies. At the present time, little research has been conducted on the CSI implementation with SiC devices. The originality of this work lies mainly in the design, characterization and implementation of the new SiC power module adapted to this well-known inverter topology
Muhsen, Hani [Verfasser], Josef [Akademischer Betreuer] Lutz, and Mario [Gutachter] Pacas. "Three-Phase Voltage Source Inverter with Very High Efficiency Based on SiC Devices / Hani Muhsen ; Gutachter: Mario Pacas ; Betreuer: Josef Lutz." Chemnitz : Universitätsbibliothek Chemnitz, 2016. http://d-nb.info/1213814960/34.
Повний текст джерелаQi, Feng. "Peripheral Circuits Study for High Temperature Inverters Using SiC MOSFETs." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1460991531.
Повний текст джерелаFonteneau, Xavier. "Conception d’un onduleur triphasé à base de composants SiC en technologie JFET à haute fréquence de commutation." Thesis, Lyon, INSA, 2014. http://www.theses.fr/2014ISAL0059/document.
Повний текст джерелаSince 2000, Silicon Carbide (SiC) components are available on the market mainly as Schottky diodes and FET transistor. These new devices provide better switching performance than Silicon (Si) components that leads to a reduction of losses and operating temperatures at equivalent cooling system. Using SiC components allows to a better converter integration. It is in this context that ECA-EN has started this thesis dedicated to using SiC devices in a three-phase inverter at high switching frequency. The converter object of this study is supply by a input voltage of 450V and provides a current of 40A per phase. The components used for these study are SiC Normally-Off JFET and Schottky Diodes because these devices were commercialized at the begining of this thesis and offer better switching performance than others SiC components. FET transistors have a different structure compared to traditionnal IGBT especially their capability to conduct a reverse current with or without body diode. So it is necessary to develop new tools dedicated to the design of converters built with SiC components. These tools are based on the electrical properties of the converters and the statics and dynamics characteristics of the transistor and the diode. The results show that when the transistors conduct a reverse current, the number of components/dies can be reduced. According to data, a PCB board of an inverter leg has been built and tested at ECA-EN. The thermal measurement based on the heatsink shows that the switching frequency of an inverter leg can be increased from 12 to 100 kHz for an ouput power of 12kW
Šandera, Tomáš. "Třífázový střídač pro napájení vysokootáčkového asynchronního motoru." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-318175.
Повний текст джерелаMuhsen, Hani. "Three-Phase Voltage Source Inverter with Very High Efficiency Based on SiC Devices." Doctoral thesis, 2015. https://monarch.qucosa.de/id/qucosa%3A20425.
Повний текст джерелаТези доповідей конференцій з теми "Three-phase SiC Inverter"
Shen, Yanfeng, Yunlei Jiang, Luke Shillaber, Hui Zhao, and Teng Long. "QCM-Enabled SiC Three-Phase Traction Inverter." In 2021 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2021. http://dx.doi.org/10.1109/ecce47101.2021.9595990.
Повний текст джерелаGu, Mingchen, Peng Xu, Li Zhang, and Kai Sun. "A SiC-based T-type three-phase three-level gridtied inverter." In 2015 IEEE 10th Conference on Industrial Electronics and Applications (ICIEA). IEEE, 2015. http://dx.doi.org/10.1109/iciea.2015.7334274.
Повний текст джерелаYin, Shan, K. J. Tseng, C. F. Tong, Rejeki Simanjorang, C. J. Gajanayake, and Amit K. Gupta. "A 99% efficiency SiC three-phase inverter using synchronous rectification." In 2016 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2016. http://dx.doi.org/10.1109/apec.2016.7468281.
Повний текст джерелаNi, Ze, Xiaofeng Lyu, Om Prakash Yadav, and Dong Cao. "Review of SiC MOSFET based three-phase inverter lifetime prediction." In 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2017. http://dx.doi.org/10.1109/apec.2017.7930819.
Повний текст джерелаKim, Sang Min, Rolando Burgos, Jinkyu Seo, and Taesuk Kwon. "Design of Switching Current Sensor for Three-Phase SiC Inverter." In 2021 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2021. http://dx.doi.org/10.1109/apec42165.2021.9487414.
Повний текст джерелаMuhsen, Hani, Sebastian Hiller, and Josef Lutz. "Three-phase voltage source inverter using SiC MOSFETs — Design and Optimization." In 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE, 2015. http://dx.doi.org/10.1109/epe.2015.7309466.
Повний текст джерелаCilio, Edgar S., Gavin Mitchell, Alex Lostetter, Roberto Schupbach, and Brice R. McPherson. "High Temperature, High Frequency SiC Three Phase Inverter for Aircraft Applications." In Power Systems Conference. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 2010. http://dx.doi.org/10.4271/2010-01-1798.
Повний текст джерелаHe, Ning, Yawen Li, Chengrui Du, Chao Liu, Changsheng Hu, and Dehong Xu. "SiC MOSFET zero-voltage-switching SVM controlled three-phase grid inverter." In 2016 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2016. http://dx.doi.org/10.1109/ecce.2016.7855431.
Повний текст джерелаZhang, Hui, Leon M. Tolbert, Jung Hee Han, Madhu S. Chinthavali, and Fred Barlow. "18 kW three phase inverter system using hermetically sealed SiC phase-leg power modules." In 2010 IEEE Applied Power Electronics Conference and Exposition - APEC 2010. IEEE, 2010. http://dx.doi.org/10.1109/apec.2010.5433365.
Повний текст джерелаYang, Peng, Wenlong Ming, Jun Liang, and Jianzhong Wu. "A SiC-based Neutral Leg for the Three-phase Four-wire Inverter." In IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2019. http://dx.doi.org/10.1109/iecon.2019.8927531.
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