Дисертації з теми "Thin materials"
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Hu, Jingping. "Electronic Thin Film Materials." Thesis, University of Oxford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491618.
Повний текст джерелаMurphy, Craig E. "Pyroelectric thin film composite materials." Thesis, University of Oxford, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.260162.
Повний текст джерелаNeeves, Matthew Kenneth. "Thin film electrochromic materials and devices." Thesis, University of the West of Scotland, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627902.
Повний текст джерелаPearce, Alexander James. "Electromechanical properties of atomically thin materials." Thesis, University of Exeter, 2014. http://hdl.handle.net/10871/15294.
Повний текст джерелаKillian, Tyler Norton Rao S. M. "Numerical modeling of very thin dielectric materials." Auburn, Ala, 2008. http://repo.lib.auburn.edu/EtdRoot/2008/SUMMER/Electrical_and_Computer_Engineering/Thesis/Killian_Tyler_16.pdf.
Повний текст джерелаAlexiou, I. "Hole transport materials for organic thin films." Thesis, University of Cambridge, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.595437.
Повний текст джерелаBaugher, Britton William Herbert. "Electronic transport in atomically thin layered materials." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/91393.
Повний текст джерела125
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 101-110).
Electronic transport in atomically thin layered materials has been a burgeoning field of study since the discovery of isolated single layer graphene in 2004. Graphene, a semi-metal, has a unique gapless Dirac-like band structure at low electronic energies, giving rise to novel physical phenomena and applications based on them. Graphene is also light, strong, transparent, highly conductive, and flexible, making it a promising candidate for next-generation electronics. Graphene's success has led to a rapid expansion of the world of 2D electronics, as researchers search for corollary materials that will also support stable, atomically thin, crystalline structures. The family of transition metal diclialcogenides represent some of the most exciting advances in that effort. Crucially, transition metal dichalcogenides add semiconducting elements to the world of 2D materials, enabling digital electronics and optoelectronics. Moreover, the single layer variants of these materials can posses a direct band gap, which greatly enhances their optical properties. This thesis is comprised of work performed on graphene and the dichalcogenides MoS 2 and WSe2. Initially, we expand on the family of exciting graphene devices with new work in the fabrication and characterization of suspended graphene nanoelectromnechanical resonators. Here we will demonstrate novel suspension techniques for graphene devices, the ion beam etching of nanoscale patterns into suspended graphene systems, and characterization studies of high frequency graphene nanoelectromechanical resonators that approach the GHz regime. We will then describe pioneering work on the characterization of atomically thin transition metal dichalcogenides and the development of electronics and optoelectronics based on those materials. We will describe the intrinsic electronic transport properties of high quality monolayer and bilayer MoS 2 , performing Hall measurements and demonstrating the temperature dependence of the material's resistivity, mobility, and contact resistance. And we will present data on optoelectronic devices based on electrically tunable p-n diodes in monolayer WSe2 , demonstrating a photodiode, solar cell, and light emitting diode.
by Britton William Herbert Baugher.
Ph. D.
Kobese, Pakamisa. "Preparation and characterization of metal titanate materials." Thesis, Stellenbosch : Stellenbosch University, 2002. http://hdl.handle.net/10019.1/53016.
Повний текст джерелаENGLISH ABSTRACT: Thin films and powders of Ni.Tiï), and CoxTi03 (where x = 0.005 - 0.9) with different stiochiometric ratios were prepared using sol gel techniques. These metal oxides were prepared by spin coating on silicon and titanium substrates followed, by annealing at 400°C and 800°C respectively under a temperature program. A range of films with MxTiOy (where x = 0.005 - 0.9) were prepared and then characterized by optical methods such as Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and Rutherford Backscattering Spectroscopy (RBS). X-ray powder diffraction was also used to determine the structural properties of these metal oxides. XRD pattern peaks showed that the powder forms of these metal oxides were well crystallized. Thin films could be amorphous because strong peaks were not present. For nickel titanates preparation, the best trend is at the low concentration of Ni that is 0.3:1 Ni:Ti. It is pure with no impurities of NiO and Ti02. High concentration of Co ranging from 0.7-1:1 Co:Ti forms a C02Ti04 structure with cubic phase. The best route for the CoTi03 preparation is at the low cobalt concentration that is 0.5:1 Co:Ti. Scanning Electron Microscopy (SEM) shows that a film deposited on silicon or a titanium substrate is smooth, uniform and crack-free. It also shows that a cobalt titanate film deposited on a Si substrate is rough, with cracks, whereas on the Ti substrate, it is smooth, uniform and crack-free. AFM studies show that as the concentration of Ni:Ti is reduced and the roughness of the thin film is increased. SEM, FTIR, XRD and RBS suggest that the 0.3:1 and 0.5:1Ni:Ti films with 10nm and 11nm thickness, respectively, iii Stellenbosch University http://scholar.sun.ac.za iv have the same structure. RBS suggests that the 1:1 and 0.5:1 Co:Ti have C0I.39Ti02.29and CoTi04.2 structures with 13nm and 16nm respectively. XRD reveals that NiTi03 and CoTi03 have rhombohedral crystal structure.
AFRIKAANSE OPSOMMING: Dunlagies en poeiers van NixTi03 en CoxTi03 (waar x = 0.005 - 0.9) met verskillende stoigiometriese verhoudings was voorberei deur gebruik te maak van sol gel tegnieke. Hierdie metaaloksiedes was voorberei deur gebruik te maak van "spin coating" op substrate van silikon en titaan gevolg deur konstante verhitting by 'n 400°C en 800°C temperatuur program onderskeidelik. 'n Reeks van lagies met MxTiOy (waar x = 0.005 - 0.9) was voorberei en gekarakteriseer met optiese metodes soos Skandeer Elektron Mikroskopie (SEM), Atoom Interaksie Mikroskopie (AFM) en "Rutherford Backscattering Spectroscopy (RBS)." X-straal Poeier Diffraksie was ook gebruik om die strukturele eienskappe van hierdie metaaloksiedes te bepaal. XRD patroon pieke wys dat die poeier vorms van hierdie metaaloksiedes goed gekristalliseer was. Dunlagies mag ook amorf wees aangesien sterk pieke nie teenwoordig was nie. Vir nikkel titaniete is hierdie die algemene roete vir die NiTi03 voorbereiding. Die beste tendens is by lae konsentrasies van Ni naamlik 0.3:1 Ni:Ti. Dit is suiwer en het geen onsuiwerhede van NiO en Ti02 nie. Hoë konsentrasies van Co vanaf 0.7 - 1:1 Co:Ti vorm 'n Co2Ti04 struktuur met 'n kubiese fase. Die beste roete vir die CoTi03 voorbereiding is by lae kobalt konsentrasie naamlik 0.5 -1:1 Co:Ti. Skandeer Elektron Mikroskopie (SEM) wys dat 'n NiTi03 laag gedeponeer op silikon en titaan substrate gelyk was, eenvorming en sonder krake. Dit wys ook dat die kobalt titaan laag oppervlakte gedeponeer op 'n silikon substraat grof was en het krake getoon. Vir die Ti substraat het dit gewys dat die oppervlaktes gladwas, univormig en sonder krake. AFM studies wys dat as die konsentrasie Ni:Ti verminder word die grofheid van die dunlaag verminder. SEM, FTIR, XRD en RBS dui aan dat die 0.3:1 en 0.5:1 Ni:Ti dunlaag dieselfde struktuur het met 10nm en 11nm dikte onderskeidelik. RBS dui aan dat die 1:1 en 0.5:1 Co:Ti het C01.39Ti02.29en CoTi04.2 strukture onderskeidelik met 13nm en 16nm diktes. XRD toon aan dat NiTi03 en CoTi03 rhombohedrale kristal strukture het.
Zhang, Xuefei. "Synthesis and Characterization of Zr1-xSixN Thin Film Materials." Fogler Library, University of Maine, 2007. http://www.library.umaine.edu/theses/pdf/ZhangX2007.pdf.
Повний текст джерелаMilne, Stuart Brian. "Thin-film silicon based MEMS actuators and materials." Thesis, University of Cambridge, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609898.
Повний текст джерелаVedula, Ramakrishna. "Materials for High Temperature Thin Film Thermocouple Applications." Thesis, Virginia Tech, 1998. http://hdl.handle.net/10919/46493.
Повний текст джерелаMaster of Science
Hägglund, Fredrik. "Characterization of thin multi-layered materials using ultrasound /." Luleå : Department of Computer Science and Electrical Engineering, Luleå University of Technology, 2009. http://pure.ltu.se/ws/fbspretrieve/2985086.
Повний текст джерелаQiu, Xiaofeng. "NANOSTRUCTURED MATERIALS FOR ENERGY CONVERSION." Case Western Reserve University School of Graduate Studies / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=case1207243913.
Повний текст джерелаScabarozi, Theodore H. Jr Barsoum M. W. "Combinatorial investigation of nanolaminate ternary carbide thin films /." Philadelphia, Pa. : Drexel University, 2009. http://hdl.handle.net/1860/3189.
Повний текст джерелаSklar, Zenon. "Quantitative acoustic microscopy of coated materials." Thesis, University of Oxford, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308851.
Повний текст джерелаLogan, Randy. "Optical metrology of thin films." Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/46094.
Повний текст джерелаSong, Ohsung. "Magnetoelastic coupling in thin films." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/28083.
Повний текст джерелаScott, William Walter. "Micro/nanoscale differential wear and corrosion of multiphase materials /." Connect to this title online, 2001. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu994420446.
Повний текст джерелаAdvisor: Bharat Bhushan, Dept. of Mechanical Engineering. Includes bibliographical references (leaves 145-152). Available online vai OhioLINK's ETD center.
Sykesud, Christopher Geoffrey Dominic. "New organic materials for gas sensing by optical means." Thesis, Coventry University, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.282602.
Повний текст джерелаParks, Carl L. "An experimental approach for studying the creep behavior of thin film/ substrate interfaces." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Sep%5FParks.pdf.
Повний текст джерелаAnwar, M. "Spectroscopic investigations of amorphous complex dielectric materials." Thesis, Brunel University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234036.
Повний текст джерелаJiran, Eva. "Capillary instabilities in thin, solid films." Thesis, Massachusetts Institute of Technology, 1990. http://hdl.handle.net/1721.1/14000.
Повний текст джерелаGiermann, Amanda L. (Amanda Leah). "Templated dewetting of thin solid films." Thesis, Massachusetts Institute of Technology, 2009. http://hdl.handle.net/1721.1/52789.
Повний текст джерелаThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student submitted PDF version of thesis.
Includes bibliographical references (p. 175-179).
The dewetting of solid metal polycrystalline films to form metal nanoparticles occurs by the nucleation and growth of holes in the film. For typical films on flat substrates, this process is not well-controlled and results in nanoparticles with nonuniform spatial and size distributions. Topographic substrates consisting of di-periodic inverted pyramid arrays and mono -periodic v-groove gratings of oxidized silicon were used to modulate the surface curvature of as-deposited polycrystalline gold films and control the dewetting process. The morphology of films dewetted on topographic substrates was found to depend on the both the relative geometry of the substrate and film thickness. Relatively thick films dewetted out of the pits and grooves prior to breaking up into particles while thinner films pinched off to form particles in the pits and grooves. If the pits or grooves were far apart, the pinch off also resulted in particles forming on the mesas between the pits. If the pits or grooves are close together, all the material pinches off into the topography. In the case of the inverted pyramids, this resulted in spatially ordered arrays of nanoparticles with narrow size distributions. A model that explains and predicts the effect of the relative geometry was developed based on competition between curvaturedriven evolution of the film-atmosphere interface and the dewetting of the film-substrate interface. It was also found that particles in both types of topographic substrates are strongly crystallographically oriented both out of the plane of the substrate and in the plane of the substrate despite the lack of an epitaxial relationship with the amorphous template.
(cont.) During the solid-state dewetting process, the growth of holes in the film is accompanied by material accumulation along the edge of the hole. Investigation of the dewetting edge at early stages revealed that the accumulation occurs unevenly in individual grains. Electron backscatter diffraction revealed that the unevenness is not due to grain orientation.
by Amanda L. Giermann.
Ph.D.
Ariel, Nava. "Integrated thin film batteries on silicon." Thesis, Massachusetts Institute of Technology, 2005. http://hdl.handle.net/1721.1/33612.
Повний текст джерелаIncludes bibliographical references (p. 147-158).
Monolithic integration has been implemented successfully in complementary metal oxide semiconductor (CMOS) technology and led to improved device performance, increased reliability, and overall cost reduction. The next element to be incorporated on the silicon chip is the power unit; possibly as part of the back end process of the very large scale integrated (VLSI) circuits' production. This thesis describes the work done in developing and studying thin film integrated lithium ion batteries compatible with microelectronics with respect to the material system employed, the cells' fabrication methods, and performance. The project consisted of three stages; first, a material system new to the battery application field was explored and power cells were fabricated and characterized. In the second stage, the fabrication process of the first material system cells was optimized thereby improving their performance. The third stage dealt with a more conventional battery material system, utilizing thin film technology to fabricate and explore power cells.
(cont.) All the cells fabricated in this work were created using microelectronic technology and were characterized by thin film analysis techniques and by measurement equipment commonly used for microelectronic device testing. The cells were fabricated in four sizes of active areas: 5x5 mm², 2x2 mm², lxl mm², and 0.5x0.5 mm². The first material system consisted of a novel lithium-free electrolyte in the form of an ultra-thin SiO₂ layer, thermally grown from sacrificial polysilicon layer on a doped polysilicon anode. The concept of SiO₂ as an electrolyte is innovative since common solid state lithium and lithium ion batteries consist of 1-2 ptm thick lithium-containing electrolytes. The controlled transport of lithium through SiO₂, 9-40 nm thick, was studied for electrolyte application. The fabricated LiCoO₂/SiO₂/polysilicon cells were successfully charged and discharged. This stage of the project demonstrated the concept of an ultra-thin lithium free electrolyte layer and introduces SiO₂ as an interesting candidate material. The second stage of the project focused on improving the LiCoO₂/SiO₂/polysilicon cell's performance and optimizing its fabrication process.
(cont.) Chemical mechanical polishing (CMP), a typical planarization method in microelectronics, new to the battery application field, was introduced in order to enhance the cell's properties and performance. LiCoO₂/SiO₂/polysilicon cells consisting of Si0₂ layers 7-40 nm thick were studied. Cells with the planarized polysilicon anode were characterized and the planarization effect was evaluated. This stage demonstrates the importance of interfacial quality in thin film batteries and the advantages incorporation of CMP as a planarization step in the fabrication process. Finally, the third stage of the project focused on applying the thin film technology knowledge and expertise to a more commonly used material system V₂0₅/LiPON/LiCoO₂. With the aim of reducing interfacial roughness, a surface morphology study of V₂0₅ was performed, tailoring different deposition conditions and surface morphology. Implementing the optimized conditions obtained from this analysis, a V₂0₅/LiPON/LiCoO₂ rocking-chair battery was studied next. The cells consisted of approximately 100 or 350 nm thick lithium phosphorus oxynitride (LiPON) electrolyte.
(cont.) This stage demonstrated the advantage of thin film technology in reducing film thickness and the performance enhancement achieved. The work described in this thesis approached the thin film battery subject from the microelectronic perspective, in order to "bring the battery into the clean room".
by Nava Ariel.
Ph.D.
Agrawal, Parnika. "Magnetic thin films For spintronic memory." Thesis, Massachusetts Institute of Technology, 2018. http://hdl.handle.net/1721.1/115689.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 107-128).
Domain walls are regions of spatially non-uniform magnetizations in magnetic materials. They form the boundaries between two or more uniformly magnetized regions called domains. Skyrmions are circular magnetic domains with chiral domain walls that are interesting due to their stability and potential for fast motion. These spin structures can be used to encode Os and Is in spintronic memory. Chiral domain walls and skyrmions have been seen in magnetic thin films sandwiched between non-identical non-magnetic materials which have high spin-orbit coupling and Dzyaloshinskii-Moriya interaction. An optimization of the different physical interactions involved in magnetic thin films can result in stripe and labyrinth domain patterns which can then be transformed into skyrmion lattices. In this thesis, we present a detailed understanding of single- and multi-layer magnetic thin films along with all the relevant physical interactions. We show that inplane magnetic fields stabilize domain walls in thin films with Dzyaloshinskii-Moriya interaction. The application of in-plane magnetic fields is shown to create multi-domain patterns in films where the ground state is uniform magnetization. Next, we study the formation of stripe and labyrinth domain patterns in magnetic films. The domain widths obtained are compared with the predictions of several theoretical models developed over the last 50 years. The appropriate model that works for thin films with strong Dzyaloshinskii-Moriya interaction is identified with the help of micromagnetic simulations. The appropriate model includes effects of finite domain wall width and volume charges inside Neel domain walls. This model is then used to measure the Dzyaloshinskii-Moriya interaction in experimentally grown magnetic thin films. Thereafter, we highlight the role of other design variables such as the thickness of magnetic and non-magnetic layers, the choice of materials, and the role of geometrical confinement in controlling the length scale of the domain patterns. This work generates the necessary knowledge and develops techniques to engineer chiral spin textures in single- and multi-layer magnetic thin films.
by Parnika Agrawal.
Ph. D.
Badir, Ashraf M. "Analysis of advanced thin-walled composite structures." Diss., Georgia Institute of Technology, 1992. http://hdl.handle.net/1853/12337.
Повний текст джерелаGupta, Shailesh. "Mathematical Modeling of Thin Strip Casting Processes." The Ohio State University, 1997. http://rave.ohiolink.edu/etdc/view?acc_num=osu1391679731.
Повний текст джерелаPinitsoontorn, Supree. "3D atom probe studies of thin film magnetic materials." Thesis, University of Oxford, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.492054.
Повний текст джерелаHenry, John B. "Characterisation and screening of novel aromatic thin-film materials." Thesis, University of Edinburgh, 2009. http://hdl.handle.net/1842/3782.
Повний текст джерелаKerman, Kian. "Ultra-thin solid oxide fuel cells: materials and devices." Thesis, Harvard University, 2014. http://dissertations.umi.com/gsas.harvard:11418.
Повний текст джерелаEngineering and Applied Sciences
Mastio, Emmanuel Antoine. "Materials engineering for high efficiency thin film electroluminescent devices." Thesis, Nottingham Trent University, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.302407.
Повний текст джерелаPeic, Antun. "Mesoporous thin-film materials studied by optical waveguide spectroscopy." Thesis, University of Bath, 2009. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.518293.
Повний текст джерелаAbbas, Ali. "The microstructure of thin film cadmium telluride photovoltaic materials." Thesis, Loughborough University, 2014. https://dspace.lboro.ac.uk/2134/16389.
Повний текст джерелаSimpson, Robert E. "Chalcogenide thin film materials for next generation data storage." Thesis, University of Southampton, 2008. https://eprints.soton.ac.uk/52041/.
Повний текст джерелаHudson, David Christopher. "Two dimensional atomically thin materials and hybrid superconducting devices." Thesis, University of Exeter, 2014. http://hdl.handle.net/10871/16034.
Повний текст джерелаPatz, Timothy Matthew. "Laser Processing of Biological Materials." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7451.
Повний текст джерелаLiu, Lilin. "Materials science in pre-plated leadframes for electronic packages /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?MECH%202006%20LIUL.
Повний текст джерелаMiyajima, Shumpei. "Novel deposition of doped amorphous silicon and related materials." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.337909.
Повний текст джерелаPaus, K. "The electron microscopy of silicon of sapphire materials." Thesis, University of Oxford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382598.
Повний текст джерелаXu, Wei-Hua. "Mechanical properties of materials at micro/nano scales /." View abstract or full-text, 2003. http://library.ust.hk/cgi/db/thesis.pl?MECH%202003%20XU.
Повний текст джерелаChu, Sze Shing. "The electrical and thermal properties of Sb[subscript 1-x]Si[subscript x], Zn[subscript x](SiO[subscript 2])[subscript 1-x] and Ag[subscript x](PrBa[subscript 2]Cu[subscript 3]O[subscript 7])[subscript 1-x] granular films /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202008%20CHU.
Повний текст джерелаSilverman, Lee Arnold 1959. "Sol-gel derived tantalum oxide thin films." Thesis, Massachusetts Institute of Technology, 1987. http://hdl.handle.net/1721.1/14835.
Повний текст джерелаChen, Weize 1966. "Metrology of very thin silicon epitaxial films." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/17469.
Повний текст джерелаIncludes bibliographical references (p. 161-169).
In this thesis, non-destructive thickness measurement of sub-0.5 µm silicon epitaxial films has been successfully performed using spectroscopic ellipsometry (SE) in the visible to near infrared (NIR) range (0.73 - 3.3 eV). The undoped epitaxial .films are grown on heavily doped substrates by chemical vapor deposition at 700 - 900° C. The effect of heavy doping on the optical properties of crystalline silicon in the spectral range 0.73 - 3.3 eV is precisely described by the Drude free carrier model. It is shown that visible-NIR SE can simultaneously determine the substrate dopant concentration, the thicknesses of epitaxial film and native oxide, and if present, the thickness of the transition layer between the epitaxial film and the substrate. The epitaxial film thicknesses measured by visible-NIR SE are in excellent agreement with results of secondary ion mass spectrometry (SIMS). The substrate dopant concentrations measured by SE also agree well with SIMS results for n-type substrates, but are consistently higher than SIMS values for p-type substrates. It is also demonstrated that visible-NIR SE is very sensitive to the epi/substrate interface quality therefore can be used for process monitoring in low temperature silicon epitaxy. Non-destructive determination of thickness and composition of strained Si1-xGex (0 < x 0.30) heteroepitaxial layers has also been successfully carried out in this thesis using visible-NIR SE. The dielectric function of the Sii-xGex layers in the spectral range 0. 75 - 2. 75 e V is fitted to a self-consistent empirical formula with only five fitting parameters. Accurate ellipsometry measurement of thickness and composition is successfully demonstrated using this formula. This thesis has developed a non-destructive technique for the measurement of both silicon and Sii-xGex epitaxial films. This technique is suitable and can be easily implemented for in-line, in situ and real-time measurement. This study also provides a numerical expression for the optical constants of strained Si1-xGex in the spectral range of interest for most optoelectronic applications.
by Weize Chen.
Ph.D.
Young, David Y. "Electrochemical H insertion in Pd thin films." Thesis, Massachusetts Institute of Technology, 2018. https://hdl.handle.net/1721.1/122864.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 51-55).
Metal hydrides are pertinent to several applications, including hydrogen storage, gas separation, and electrocatalysis. The Pd-H system is used as a model for metal-hydrogen systems and the effect H insertion has on their properties. A study was conducted to assess the performance of various electrochemical cell formats in electrochemically inserting H into Pd, which is important in building devices for the above applications. A set of in situ X-ray diffraction apparatuses were built to enable simultaneous electrochemical H insertion and measurement of PdH[subscript x] composition. A comparison between aqueous and solid electrolytes, temperature, and thin film vs. bulk Pd revealed that thinner films, lower temperatures, and aqueous electrolytes tended to promote higher achievable H content, with the highest H:Pd ratio observed being 0.96 ± 0.02. These results not only show high H loading into Pd but also both reproducibility and a clear association between varied parameters and cell performance. In addition, the stability and performance of high temperature solid oxide electrolytes was investigated. A novel in situ calorimeter was constructed to enable the study of high temperature solid oxide electrolyte degradation while under operating conditions, similar to recent work in calorimetric analysis of battery stability. This calorimeter has a power detection sensitivity of 16.1 ± 11.7 mW, which is sufficient for detecting and quantifying many of the degradation and other side reactions that occur during high temperature operation of a solid oxide electrolyte in an electrochemical cell. This apparatus provides a tool needed to assess stability and life of solid oxide electrolytes under operation, a critical component to developing higher performing solid oxide electrochemical devices.
by David Y. Young.
S.M.
S.M. Massachusetts Institute of Technology, Department of Materials Science and Engineering
Gupta, Manish. "Simulation and Analysis of Thin Strip Casting Process." The Ohio State University, 1999. http://rave.ohiolink.edu/etdc/view?acc_num=osu1391676878.
Повний текст джерелаSuddendorf, Manfred B. "Laser scanning probes for thermal wave materials characterisation and microscopy." Thesis, University of Nottingham, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239553.
Повний текст джерелаGray, Dilys Eira. "Static and dynamic studies of materials and processes using ellipsometry." Thesis, University of Southampton, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.242187.
Повний текст джерелаOmar, Ozma. "Optical effects in Langmuir-Blodgett films of novel organic materials." Thesis, Sheffield Hallam University, 1998. http://shura.shu.ac.uk/20143/.
Повний текст джерелаMa, Yunfei. "Micromagentic [sic] study of magnetoeleastic materials /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/7068.
Повний текст джерелаHolder, Simon James. "The synthesis and evaluation of cyclic and linear polysiloxane Langmuir-Blodgett materials." Thesis, University of Hull, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318703.
Повний текст джерела