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Статті в журналах з теми "Thin materials"
Horiuchi, Noriaki. "Atomically thin materials." Nature Photonics 12, no. 11 (October 26, 2018): 641. http://dx.doi.org/10.1038/s41566-018-0294-1.
Повний текст джерелаLara-Padilla, E., Maximino Avendano-Alejo, and L. Castaneda. "Transparent Conducting Oxides: Selected Materials for Thin Film Solar Cells." International Journal of Science and Research (IJSR) 11, no. 7 (July 5, 2022): 372–80. http://dx.doi.org/10.21275/sr22628033513.
Повний текст джерелаIshii, Hitoshi, Yohei Taguchi, Kazuo Ishii, and Hirofumi Akagi. "OS11W0239 Ultrasonic bending fatigue testing method for thin sheet materials." Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2003.2 (2003): _OS11W0239. http://dx.doi.org/10.1299/jsmeatem.2003.2._os11w0239.
Повний текст джерелаWellen, M. "8.1 Thin-layer Materials." Materials Science Forum 366-368 (March 2001): 549–59. http://dx.doi.org/10.4028/www.scientific.net/msf.366-368.549.
Повний текст джерелаTsebrenko, M. V., N. M. Rezanova, and T. I. Sizevich. "Thin-fibre filtering materials." Fibre Chemistry 24, no. 1 (January 1992): 4–7. http://dx.doi.org/10.1007/bf00557167.
Повний текст джерелаDonges, Axel. "Measuring Extra-thin Materials." Optik & Photonik 9, no. 2 (May 2014): 52–54. http://dx.doi.org/10.1002/opph.201400043.
Повний текст джерелаTang, Wen, Tao Ruan Wan, and Donjing Huang. "Interactive thin elastic materials." Computer Animation and Virtual Worlds 27, no. 2 (June 5, 2015): 141–50. http://dx.doi.org/10.1002/cav.1666.
Повний текст джерелаNoudem, Jacques G. "Superconducting materials by design: Bulk with artificial thin walls as cryo-magnets." Mechanik, no. 2 (February 2015): 124/13–124/23. http://dx.doi.org/10.17814/mechanik.2015.2.73.
Повний текст джерелаLavine, Marc S. "A family of thin materials." Science 372, no. 6547 (June 10, 2021): 1162.10–1164. http://dx.doi.org/10.1126/science.372.6547.1162-j.
Повний текст джерелаGarcía de Abajo, F. Javier, and Alejandro Manjavacas. "Plasmonics in atomically thin materials." Faraday Discussions 178 (2015): 87–107. http://dx.doi.org/10.1039/c4fd00216d.
Повний текст джерелаДисертації з теми "Thin materials"
Hu, Jingping. "Electronic Thin Film Materials." Thesis, University of Oxford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491618.
Повний текст джерелаMurphy, Craig E. "Pyroelectric thin film composite materials." Thesis, University of Oxford, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.260162.
Повний текст джерелаNeeves, Matthew Kenneth. "Thin film electrochromic materials and devices." Thesis, University of the West of Scotland, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627902.
Повний текст джерелаPearce, Alexander James. "Electromechanical properties of atomically thin materials." Thesis, University of Exeter, 2014. http://hdl.handle.net/10871/15294.
Повний текст джерелаKillian, Tyler Norton Rao S. M. "Numerical modeling of very thin dielectric materials." Auburn, Ala, 2008. http://repo.lib.auburn.edu/EtdRoot/2008/SUMMER/Electrical_and_Computer_Engineering/Thesis/Killian_Tyler_16.pdf.
Повний текст джерелаAlexiou, I. "Hole transport materials for organic thin films." Thesis, University of Cambridge, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.595437.
Повний текст джерелаBaugher, Britton William Herbert. "Electronic transport in atomically thin layered materials." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/91393.
Повний текст джерела125
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 101-110).
Electronic transport in atomically thin layered materials has been a burgeoning field of study since the discovery of isolated single layer graphene in 2004. Graphene, a semi-metal, has a unique gapless Dirac-like band structure at low electronic energies, giving rise to novel physical phenomena and applications based on them. Graphene is also light, strong, transparent, highly conductive, and flexible, making it a promising candidate for next-generation electronics. Graphene's success has led to a rapid expansion of the world of 2D electronics, as researchers search for corollary materials that will also support stable, atomically thin, crystalline structures. The family of transition metal diclialcogenides represent some of the most exciting advances in that effort. Crucially, transition metal dichalcogenides add semiconducting elements to the world of 2D materials, enabling digital electronics and optoelectronics. Moreover, the single layer variants of these materials can posses a direct band gap, which greatly enhances their optical properties. This thesis is comprised of work performed on graphene and the dichalcogenides MoS 2 and WSe2. Initially, we expand on the family of exciting graphene devices with new work in the fabrication and characterization of suspended graphene nanoelectromnechanical resonators. Here we will demonstrate novel suspension techniques for graphene devices, the ion beam etching of nanoscale patterns into suspended graphene systems, and characterization studies of high frequency graphene nanoelectromechanical resonators that approach the GHz regime. We will then describe pioneering work on the characterization of atomically thin transition metal dichalcogenides and the development of electronics and optoelectronics based on those materials. We will describe the intrinsic electronic transport properties of high quality monolayer and bilayer MoS 2 , performing Hall measurements and demonstrating the temperature dependence of the material's resistivity, mobility, and contact resistance. And we will present data on optoelectronic devices based on electrically tunable p-n diodes in monolayer WSe2 , demonstrating a photodiode, solar cell, and light emitting diode.
by Britton William Herbert Baugher.
Ph. D.
Kobese, Pakamisa. "Preparation and characterization of metal titanate materials." Thesis, Stellenbosch : Stellenbosch University, 2002. http://hdl.handle.net/10019.1/53016.
Повний текст джерелаENGLISH ABSTRACT: Thin films and powders of Ni.Tiï), and CoxTi03 (where x = 0.005 - 0.9) with different stiochiometric ratios were prepared using sol gel techniques. These metal oxides were prepared by spin coating on silicon and titanium substrates followed, by annealing at 400°C and 800°C respectively under a temperature program. A range of films with MxTiOy (where x = 0.005 - 0.9) were prepared and then characterized by optical methods such as Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and Rutherford Backscattering Spectroscopy (RBS). X-ray powder diffraction was also used to determine the structural properties of these metal oxides. XRD pattern peaks showed that the powder forms of these metal oxides were well crystallized. Thin films could be amorphous because strong peaks were not present. For nickel titanates preparation, the best trend is at the low concentration of Ni that is 0.3:1 Ni:Ti. It is pure with no impurities of NiO and Ti02. High concentration of Co ranging from 0.7-1:1 Co:Ti forms a C02Ti04 structure with cubic phase. The best route for the CoTi03 preparation is at the low cobalt concentration that is 0.5:1 Co:Ti. Scanning Electron Microscopy (SEM) shows that a film deposited on silicon or a titanium substrate is smooth, uniform and crack-free. It also shows that a cobalt titanate film deposited on a Si substrate is rough, with cracks, whereas on the Ti substrate, it is smooth, uniform and crack-free. AFM studies show that as the concentration of Ni:Ti is reduced and the roughness of the thin film is increased. SEM, FTIR, XRD and RBS suggest that the 0.3:1 and 0.5:1Ni:Ti films with 10nm and 11nm thickness, respectively, iii Stellenbosch University http://scholar.sun.ac.za iv have the same structure. RBS suggests that the 1:1 and 0.5:1 Co:Ti have C0I.39Ti02.29and CoTi04.2 structures with 13nm and 16nm respectively. XRD reveals that NiTi03 and CoTi03 have rhombohedral crystal structure.
AFRIKAANSE OPSOMMING: Dunlagies en poeiers van NixTi03 en CoxTi03 (waar x = 0.005 - 0.9) met verskillende stoigiometriese verhoudings was voorberei deur gebruik te maak van sol gel tegnieke. Hierdie metaaloksiedes was voorberei deur gebruik te maak van "spin coating" op substrate van silikon en titaan gevolg deur konstante verhitting by 'n 400°C en 800°C temperatuur program onderskeidelik. 'n Reeks van lagies met MxTiOy (waar x = 0.005 - 0.9) was voorberei en gekarakteriseer met optiese metodes soos Skandeer Elektron Mikroskopie (SEM), Atoom Interaksie Mikroskopie (AFM) en "Rutherford Backscattering Spectroscopy (RBS)." X-straal Poeier Diffraksie was ook gebruik om die strukturele eienskappe van hierdie metaaloksiedes te bepaal. XRD patroon pieke wys dat die poeier vorms van hierdie metaaloksiedes goed gekristalliseer was. Dunlagies mag ook amorf wees aangesien sterk pieke nie teenwoordig was nie. Vir nikkel titaniete is hierdie die algemene roete vir die NiTi03 voorbereiding. Die beste tendens is by lae konsentrasies van Ni naamlik 0.3:1 Ni:Ti. Dit is suiwer en het geen onsuiwerhede van NiO en Ti02 nie. Hoë konsentrasies van Co vanaf 0.7 - 1:1 Co:Ti vorm 'n Co2Ti04 struktuur met 'n kubiese fase. Die beste roete vir die CoTi03 voorbereiding is by lae kobalt konsentrasie naamlik 0.5 -1:1 Co:Ti. Skandeer Elektron Mikroskopie (SEM) wys dat 'n NiTi03 laag gedeponeer op silikon en titaan substrate gelyk was, eenvorming en sonder krake. Dit wys ook dat die kobalt titaan laag oppervlakte gedeponeer op 'n silikon substraat grof was en het krake getoon. Vir die Ti substraat het dit gewys dat die oppervlaktes gladwas, univormig en sonder krake. AFM studies wys dat as die konsentrasie Ni:Ti verminder word die grofheid van die dunlaag verminder. SEM, FTIR, XRD en RBS dui aan dat die 0.3:1 en 0.5:1 Ni:Ti dunlaag dieselfde struktuur het met 10nm en 11nm dikte onderskeidelik. RBS dui aan dat die 1:1 en 0.5:1 Co:Ti het C01.39Ti02.29en CoTi04.2 strukture onderskeidelik met 13nm en 16nm diktes. XRD toon aan dat NiTi03 en CoTi03 rhombohedrale kristal strukture het.
Zhang, Xuefei. "Synthesis and Characterization of Zr1-xSixN Thin Film Materials." Fogler Library, University of Maine, 2007. http://www.library.umaine.edu/theses/pdf/ZhangX2007.pdf.
Повний текст джерелаMilne, Stuart Brian. "Thin-film silicon based MEMS actuators and materials." Thesis, University of Cambridge, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609898.
Повний текст джерелаКниги з теми "Thin materials"
Yue, Kuo, ed. Thin film transistors: Materials and processes. Boston: Kluwer Academic Publishers, 2004.
Знайти повний текст джерелаThe materials science of thin films. Boston: Academic Press, 1992.
Знайти повний текст джерелаMaterials science in microelectronics. Croton-on-Hudson, N.Y: GiRo Press, 1995.
Знайти повний текст джерелаMaterials science in microelectronics. 2nd ed. Amsterdam: Elsevier, 2005.
Знайти повний текст джерелаMachlin, E. S. Materials science in microelectronics. 2nd ed. Amsterdam: Elsevier, 2006.
Знайти повний текст джерелаW, Göpel, and Ziegler Ch, eds. Nanostructures based on molecular materials. Weinheim: VCH, 1992.
Знайти повний текст джерелаInternational, Conference on Wear of Materials (14th 2003 Washington D. C. ). Wear of materials. Amsterdam: Elsevier, 2003.
Знайти повний текст джерелаDonglu, Shi, ed. Functional thin films and functional materials: New concepts and technologies. Berlin: Springer, 2003.
Знайти повний текст джерелаMaterials science of thin films: Deposition and structure. 2nd ed. San Diego, CA: Academic Press, 2002.
Знайти повний текст джерелаThin film growth: Physics, materials science and applications. Oxford: Woodhead Pub Ltd, 2011.
Знайти повний текст джерелаЧастини книг з теми "Thin materials"
Lakhtakia, Akhlesh, and Joseph B. Geddes. "Thin-Film Metamaterials Called Sculptured Thin Films." In Engineering Materials, 59–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-12070-1_3.
Повний текст джерелаKasirga, T. Serkan. "Atomically Thin Materials." In Thermal Conductivity Measurements in Atomically Thin Materials and Devices, 1–10. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5348-6_1.
Повний текст джерелаHolowka, Eric P., and Sujata K. Bhatia. "Thin-Film Materials." In Drug Delivery, 63–116. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4939-1998-7_3.
Повний текст джерелаShivashankar, S. A., J. J. Cuomo, J. E. Yehoda, and S. J. Whitehair. "Diamond Thin Films." In New Materials, 195–214. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-662-08970-5_9.
Повний текст джерелаWang, Xizu, Ady Suwardi, Qiang Zhu, and Jianwei Xu. "Thin-Film Thermoelectrics." In Materials for Devices, 169–98. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003141358-7.
Повний текст джерелаMwema, Fredrick Madaraka, Tien-Chien Jen, and Lin Zhu. "Thin Film Materials for Energy Applications." In Thin Film Coatings, 195–220. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003202615-10.
Повний текст джерелаDauscher, Anne, and Bertrand Lenoir. "Thermoelectric Materials." In Pulsed Laser Deposition of Thin Films, 461–85. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2006. http://dx.doi.org/10.1002/9780470052129.ch19.
Повний текст джерелаHorng, Ray-Hua. "Thin-GaN LED Materials." In Handbook of Advanced Lighting Technology, 149–79. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-00176-0_13.
Повний текст джерелаHorng, Ray-Hua. "Thin-GaN LED Materials." In Handbook of Advanced Lighting Technology, 1–25. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-00295-8_13-1.
Повний текст джерелаShen, Y. L. "Thin Continuous Films." In Constrained Deformation of Materials, 35–76. Boston, MA: Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-6312-3_3.
Повний текст джерелаТези доповідей конференцій з теми "Thin materials"
Perry, Joseph, Sundaravel Ananthavel, Kevin Cammack, Stephen M. Kuebler, Seth R. Marder, Mariacristina Rumi, and Brian H. Cumpston. "Materials for two-photon 3D lithography." In Organic Thin Films. Washington, D.C.: OSA, 1999. http://dx.doi.org/10.1364/otf.1999.sub1.
Повний текст джерелаHerman, Warren N., and L. Michael Hayden. "Maker fringes revisited: second-harmonic generation from birefringent or absorbing materials." In Organic Thin Films. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/otf.2001.otud5.
Повний текст джерелаOstroverkhov, Victor, Kenneth D. Singer, and Rolfe G. Petschek. "Second-harmonic generation in nonpolar chiral materials: relationship between molecular and macroscopic properties." In Organic Thin Films. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/otf.2001.owa2.
Повний текст джерелаJayaraj, M. K. "Preface: Optoelectronic Materials and Thin Films." In OPTOELECTRONIC MATERIALS AND THIN FILMS: OMTAT 2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4861967.
Повний текст джерелаCabrini, Stefano, Carlos Pina-Hernandez, Alexander Koshelev, Keiko Munechika, Michela Sainato, and Scott D. Dhuey. "High-refractive index materials for fabrication of photonic nanostructures (Conference Presentation)." In Nanostructured Thin Films XI, edited by Tom G. Mackay and Akhlesh Lakhtakia. SPIE, 2018. http://dx.doi.org/10.1117/12.2322890.
Повний текст джерелаFlores, F., R. Saiz-Pardo, and R. Rincon. "Interfaces in crystalline materials." In Thin Film Physics and Applications: Second International Conference, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190787.
Повний текст джерелаDalton, Larry R., and Bruce H. Robinson. "Comparison of simple theory and experiment on the electro-optic coefficient of high dipole moment materials." In Organic Thin Films. Washington, D.C.: OSA, 1999. http://dx.doi.org/10.1364/otf.1999.fa1.
Повний текст джерелаGillet, P. A., J. L. Fourquet, and Odile Bohnke. "New electrochromic thin-film materials." In Optical Materials Technology for Energy Efficiency and Solar Energy, edited by Anne Hugot-Le Goff, Claes-Goeran Granqvist, and Carl M. Lampert. SPIE, 1992. http://dx.doi.org/10.1117/12.130535.
Повний текст джерелаYi, Yong, Han-Don Sun, Hui-Bie F. Xu, Guang Huang, and Xinjian Yi. "Multiphoton upconversion thin film materials." In Optoelectronics and High-Power Lasers & Applications, edited by Seppo Honkanen and Shibin Jiang. SPIE, 1998. http://dx.doi.org/10.1117/12.305398.
Повний текст джерелаde Abajo, F. Javier Garcia. "Plasmonics with atomically thin materials." In 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2017. http://dx.doi.org/10.1109/cleoe-eqec.2017.8087632.
Повний текст джерелаЗвіти організацій з теми "Thin materials"
Belzer, Barbara J., and David L. Blackburn. Thin film reference materials development. Gaithersburg, MD: National Institute of Standards and Technology, 1998. http://dx.doi.org/10.6028/nist.sp.400-100.
Повний текст джерелаGhamaty, Saeid. Ultra Thin Quantum Well Materials. Office of Scientific and Technical Information (OSTI), August 2012. http://dx.doi.org/10.2172/1047577.
Повний текст джерелаSchwartzberg, Adam. New thin materials for electronics. Office of Scientific and Technical Information (OSTI), February 2012. http://dx.doi.org/10.2172/1039011.
Повний текст джерелаChittenden, David H. Thin Film Composite Materials, Phase 2. Fort Belvoir, VA: Defense Technical Information Center, January 1987. http://dx.doi.org/10.21236/ada222882.
Повний текст джерелаPotter, Jr, and Barrett G. Optoelectronic Nanocomposite Materials for Thin Film Photovoltaics. Fort Belvoir, VA: Defense Technical Information Center, June 2012. http://dx.doi.org/10.21236/ada562250.
Повний текст джерелаBaron, B. N., R. W. Birkmire, J. E. Phillips, W. N. Shafarman, S. S. Hegedus, and B. E. McCandless. Fundamentals of polycrystalline thin film materials and devices. Office of Scientific and Technical Information (OSTI), January 1991. http://dx.doi.org/10.2172/6343732.
Повний текст джерелаSpears, R., R. Parsons, and P. Tretina. Thin film materials research for low-cost solar collectors. Office of Scientific and Technical Information (OSTI), November 1985. http://dx.doi.org/10.2172/5122748.
Повний текст джерелаTaylor, P. C., D. Chen, and S. L. Chen. Electronic processes in thin-film PV materials. Final report. Office of Scientific and Technical Information (OSTI), July 1998. http://dx.doi.org/10.2172/656705.
Повний текст джерелаQiao, Yu. Understanding Size Effect in Cleavage Cracking in Thin Materials. Office of Scientific and Technical Information (OSTI), February 2013. http://dx.doi.org/10.2172/1063785.
Повний текст джерелаWeaver, John H. High Temperature Superconducting Materials: Thin Films, Surfaces, and Interfaces. Fort Belvoir, VA: Defense Technical Information Center, June 1991. http://dx.doi.org/10.21236/ada237359.
Повний текст джерела