Дисертації з теми "Thin jet"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся з топ-50 дисертацій для дослідження на тему "Thin jet".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Переглядайте дисертації для різних дисциплін та оформлюйте правильно вашу бібліографію.
Bathurst, Stephen 1980. "Ink jet printing of PZT thin films for MEMS." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/78236.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (p. 108-113).
Of the readily available piezoelectric engineering materials perovskite phase lead zirconate titanate (PZT) has the strongest mechanical to electrical coupling. PZT based devices have the potential to have the highest performance. Due to the strong piezoelectric response and low operating voltage, many groups have worked to integrate thin film PZT into a wide range of microelectromechanical systems (MEMS) devices including: actuators, energy harvesters, resonators, pressure sensors, pumps, nano-positioning stages, and MEMS switches. However, processing of thin film PZT is not readily compatible with existing MEMS fabrication processes and significant design constraints exist when integrating thin film PZT. In recent years drop-on-demand (DOD) printing has been studied as a robust, flexible, and inexpensive method of material deposition for MEMS. Direct printing enables the designer to deposit a film based on a digital pattern file only eliminating the need for photolithography and subsequent etching steps in the manufacturing process flow. There is a significant cost savings due to a reduction in the material consumption during manufacturing and in chemical waste produced. The result is a manufacturing process that is cleaner and cheaper than other common deposition techniques. The most compelling benefit of direct printing of PZT is that it provides a freedom of geometry that eliminates many of the design constraints currently associated with PZT MEMS. Since high quality thin films can be achieved with deposition control that is not possible with spin coating, novel functionalities can be incorporated into PZT MEMS. Specifically, PZT printing is able to deposit material over and around large out-of-plane features. In addition, the thickness of thin film PZT can vary deterministically across a device or across a wafer. A new manufacturing method for the deposition of PZT thin films based on ink jet printing has been developed and used to fabricate a piezoelectric micromachined ultrasonic transducer. A solvent system and processes parameters were established that enable the deposition of high quality PZT thin films. Substrate temperature and drop spacing for uniform deposition were determined and both multilayer and single layer PZT films were successfully deposited. Alignment within 10[mu]m and a resolution limit of 30[mu]m were demonstrated. The performance of a printed PZT based ultrasonic transducer was fit to established models to determine piezoelectric coupling and dielectric properties. The piezoelectric coupling coefficient, d₃₁, for printed PZT was between -75pC/N and -95pC/N. Impedance data at 1kHz provided the relative permittivity (750-890) and the dielectric loss tangent (2.4%-2.8%). The final printing process enabled the first digital deposition of thin film PZT and the printed PZT based pMUT confirmed the properties of the film are within the range required for a high performance piezoelectric MEMS devices.
by Stephen P. Bathurst.
Ph.D.
Li, Jiantong. "Ink-jet printing of thin film transistors based on carbon nanotubes." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-24427.
Повний текст джерелаQC 20100910
Fang, Mei. "Properties of Multifunctional Oxide Thin Films Despostied by Ink-jet Printing." Doctoral thesis, KTH, Teknisk materialfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-102021.
Повний текст джерелаQC 20120907
Okabayashi, Y., K. kanai, Y. Ouchi, K. Seki, and 一彦 関. "Apparatus for solution jet beam deposition of organic thin films and in situ ultraviolet photoelectron spectroscopy." American Institute of Physics, 2006. http://hdl.handle.net/2237/7048.
Повний текст джерелаMendez, Miguel Alfonso. "Dynamics of Gas Jet Impinging on Falling Liquid Films." Doctoral thesis, Universite Libre de Bruxelles, 2018. https://dipot.ulb.ac.be/dspace/bitstream/2013/281945/5/contratMM.pdf.
Повний текст джерелаDoctorat en Sciences de l'ingénieur et technologie
info:eu-repo/semantics/nonPublished
Mishra, Nilesha [Verfasser]. "Influence of strain on the functionality of ink-jet printed thin films and devices on flexible substrates / Nilesha Mishra." Karlsruhe : KIT Scientific Publishing, 2019. http://www.ksp.kit.edu.
Повний текст джерелаMishra, Nilesha [Verfasser]. "Influence of strain on the functionality of ink-jet printed thin films and devices on flexible substrates / Nilesha Mishra." Karlsruhe : KIT-Bibliothek, 2018. http://d-nb.info/1166234304/34.
Повний текст джерелаRajendran, Sucharitha. "Investigation of Drop Generation from Low Velocity Liquid Jets and its Impact Dynamics on Thin Liquid Films." University of Cincinnati / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1512038966865923.
Повний текст джерелаSahay, Prateek. "Development of a Robotic Cell for Removal of Tabs from Jet Engine Turbine Blade." University of Cincinnati / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1574417686354007.
Повний текст джерелаDrahi, Etienne. "Impression de silicium par procédé jet d’encre : des nanoparticules aux couches minces fonctionnelles pour applications photovoltaïques." Thesis, Saint-Etienne, EMSE, 2013. http://www.theses.fr/2013EMSE0685/document.
Повний текст джерелаThis study takes place in the frame of the Inxilicium project from the National Research Agency, which targets the fabrication of silicon thin film solar cells by inkjet-printing. Thanks to their specific properties, silicon nanoparticles are materials with strong potential for technological breakthroughs. Silicon nanoparticle-based inks made by different synthesis routes have been inkjet-printed on different substrates: quartz, metallic electrodes (aluminum, molybdenum) and transparent electrodes (ZnO:Al). Homogeneous and continuous thin films (from several hundreds of nm to some µm thick) have been obtained through optimization of the printing process, the ink/substrate interaction (via substrates surface energy tuning) and the drying step.A posteriori, an annealing step is mandatory for recovering of functional properties. By using nanoparticles with tailored surface physical chemistry, the sintering temperature decreases from 1100 °C to 600 °C. In order to allow the use of this material on flexible and low cost substrates, selective sintering (microwave and photonics) have been also evaluated.Thin film optical properties and electrode/silicon interfaces have been investigated with the purpose to integrate those layers into devices (solar cells…). Metallurgical evolution of Al-Si and Mo-Si physical interfaces has been studied by in situ XRD.This work allowed the fabrication of a PN junction with a photovoltaic behaviour under strong polarization voltage thanks to the development of an innovative thermal pasting process, which opens the way to the reduction of process thermal budget
Talagrand, Clément. "Transistor en couches minces avec canal en oxyde d’indium de gallium et de zinc : matériaux, procédés, dispositifs." Thesis, Saint-Etienne, EMSE, 2015. http://www.theses.fr/2015EMSE0797/document.
Повний текст джерелаIn order to carry out electronics functions on flexible substrate, thin film transistor is essential. The aim of this thesis is to increase knowledge on this device.State of art of IGZO TFT is summarized in chapter 1. This part presents thin film transistor and justify the choice of IGZO as the semiconductor material. Then, properties of this amorphous oxide semiconductor are discussed. Finally, this chapter presents the results obtained in the literature for IGZO based thin film transistor.Chapter 2 establishes a link between IGZO properties and sputtering deposition. Films are studied by spectroscopic ellipsometry. Experiments show variations in optical properties due to deposition time, oxygen content and position on the wafer. Resistivity measurements are carried out to understand more deeply the causes of these variations.Chapter 3 develops a complete process to achieve TFT on flexible substrate. The choice of different materials and processes is discussed. The performances of the TFT are investigated versus the annealing time and characterized under mechanical stress. Mobility up to 10 cm2.V-1.s-1 can be achieved after an annealing at 300°C during 1h30. Mechanical stresses show a degradation of the transistor induced by cracks in the oxide layer.Chapter 4 focuses on IGZO's deposition by inkjet printing. An ink is formulated using metallic salts and a solvents mixture. The parameters of the printing system are also optimized. To compare the different techniques of deposition, printed IGZO TFTs are characterized and compared with the one fabricated with the standard PVD deposition technique. Mobility is relatively lower and equals 0.4 cm2.V-1.s-1
Kintz, Harold. "Réalisation de couches minces nanocomposites par un procédé original couplant la pyrolyse laser et la pulvérisation magnétron : application aux cellules solaires tout silicium de troisième génération." Phd thesis, Université Paris Sud - Paris XI, 2013. http://tel.archives-ouvertes.fr/tel-00958453.
Повний текст джерелаMartini, Thibaut. "Etude de la formulation d'encre à base de précurseurs Cu, Zn, Sn, S et du recuit de cristallisation pour le dépot hors vide de couches photovoltaïques." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAI063/document.
Повний текст джерелаKësterites or Cu2ZnSn(S,Se)4 (CZTS), are semi-conductors only made of abundant elements. Their direct bangap between 1.0 and 1.5 eV makes them excellent candidates for the replacement of the currently used thin film absorbers. This thesis describes the fabrication of thin films of Cu2ZnSnS4 by nanoparticles printing followed by crystallization annealing. Different hydrothermal synthesis of nanoparticles have been developed, some in continuous flow reactor, for a development on a larger scale. The influence of the types of precursors and synthesis conditions on the particals chemical composition purity was evaluated. The behavior of colloidal dispersion is then characterized and three surface functionalization based on dodecanthiol, dodecyl pyrrolidone and sulfide anions are presented. These stabilizations allow the manufacture of inks deposited by inkjet and spray on molybdenum. The printed and dried layers are then annealed in sulfur atmosphere. Annealing of at least 120 minutes are required. However, the growth of the layers is heterogeneous when printed with the nanoparticles stabilized by dodecanethiol and dodecyl pyrrolidone. The presence of high carbon content, prooved by Raman spectroscopy, inhibits the growth of the material. Only thin film printed using purified nanoparticles stabilized by sulfide anions allow homogeneous growth of the material during annealing
Ralph, Elise Ann. "Predicting eddy detachment from thin jets." Thesis, Massachusetts Institute of Technology, 1991. http://hdl.handle.net/1721.1/54968.
Повний текст джерелаBibliography: p. 103-105.
by Elise Ann Ralph.
M.S.
Moon, Seung Jae. "Development of inkjet printing technology for fully solution process dedicated to organic electronic circuits." Thesis, Rennes 1, 2020. http://www.theses.fr/2020REN1S009.
Повний текст джерелаThe main objective of this study was to demonstrate the capability of inkjet printing technology to fabricate organic based digital circuits. At first, development of an Organic Thin Film Transistor structure (OTFTs) fabricated with inkjet printing technology has highlighted interaction mechanisms between materials deposited with a fully solution process. From this study, the structure has been optimized to obtain uniform and reproducible electrical performance. The organic Thin Film Transistors were then electrically modeled using a simple model (Aim-Extract, Aim-Spice). The comparison between electrical characterizations and simulations has demonstrated the possibility to predict electrical behavior of printed OTFT. From this model, elementary logic gates were simulated and then fabricated by inkjet printing technology. Time response and supply voltage of such circuit has been determined. Finally, more complex combinational and sequential electronic circuits, such as multiplexers and D-latch, were fabricated and characterized. The Experimental protocol used in this study dealing with: i) OTFT electrical optimization, ii) electrical modeling and iii) electronic circuit fabrication has demonstrated the ability of inkjet printing to reach low-cost, large area, fully additive and potentially flexible electronics
Pickworth, Louisa Alyce. "Experimental investigation of supersonic plasma jets colliding with thin metallic foils." Thesis, Imperial College London, 2013. http://hdl.handle.net/10044/1/15670.
Повний текст джерелаLe, Druillennec Marie. "Etude des mécanismes d'endommagement de films minces métalliques déposés sur substrats souples pour l'électronique flexible." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAI108/document.
Повний текст джерелаOver the past 20 years, new improvements in materials and processes led to the development of printed flexible electronics. Flexible electronics devices subjected to bending, twisting, or stretching during their lifetime, the development of device with high reliability is therefore of great importance for the efficiency of electrical connection. This work investigates the mechanical reliability of inkjet or screen-printed Ag thin films on polyimide substrates dedicated to the electrical interconnection of active components. Expected mechanical failure modes are film cracking and buckling delamination.First of all, in order to characterized the two mechanisms, tensile tests are performed under an optical microscope to follow cracks and under an optical interferometer to follow buckles. In order to obtain crack spacing evolution during deformation, an image processing is realized. Two types of cracks are observed: long and straight cracking for thick films and small and zigzag shape cracking for thin films. The evolution of buckles shape with imposed tensile deformation is characterized.In a second time, in order to understand experimental observations, mechanical failure modes are analysed with finite elements models. The origin of the two types of cracking are explained by a geometrical effect of film thickness. A elastoplastic shear lag bidimensional model gives upper and lower bonds of crack spacing during deformation. A three-dimensional model allows identification of cohesive zone model parameters at film/substrate interface, from experimental buckle shape. An adhesion energy of 2 J.m-2 , a critical strength of 20 MPa and a mode mixity parameter of 0.4 are determined. These values are in good agreement with literature
Hahn, Nielsen Jennifer Helene. "What Drove This Painted Wood Together." Bowling Green State University / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1522331756842806.
Повний текст джерелаTakeda, Yuya. "More than a tape-recorder : negotiations of English language teacher identities in the JET Program in Japan." Thesis, University of British Columbia, 2017. http://hdl.handle.net/2429/62593.
Повний текст джерелаEducation, Faculty of
Language and Literacy Education (LLED), Department of
Graduate
Rioult, Maxime. "Hematite-based epitaxial thin films as photoanodes for solar water splitting." Palaiseau, Ecole polytechnique, 2015. https://theses.hal.science/tel-01220396/document.
Повний текст джерелаUsing hydrogen as an energy carrier for solar energy storage and/or fuel alternative to oil is very appealing, especially as it can be cleanly produced by solar water splitting. In this process, electron-hole pairs, generated in illuminated semiconductors dipped in an aqueous solution, realize the water oxidoreduction reactions (oxygen production at the photoanode and hydrogen production at the photocathode). Transition metal oxides, in particular hematite (α-Fe2O3) which features a quasi ideal band-gap for this application, are the most promising photoanodes materials. Hematite thin films were deposited on single crystals by oxygen plasma assisted molecular beam epitaxy. These model samples along with the use of high-end techniques, in particular using synchrotron radiation, make possible the identification of the relevant parameters affecting the photoelectrochemical properties. I firstly focused on the impact of the crystallographic structure, the stoichiometry and the surface morphology. Then the effects of doping with titanium were investigated, demonstrating the existence of an optimal doping level and an increase of the charges diffusion length inducing a high photocurrent gain. In addition, I studied the electronic structure and the surface recombinations dynamics of TiO2 - Ti-doped hematite heterojunctions, revealing a diffuse interface. Lastly, the internal electric field created by a ferroelectric thin film of BaTiO3/Nb:SrTiO3 was considered in order to enhance the performances of photoanodes. A first step toward the comprehension of the link between ferroelectric polarization and photocurrent was achieved through the evidence of an internal electric field favourable for the separation of charges
Yin, Shi. "Integration of epitaxial piezoelectric thin films on silicon." Thesis, Ecully, Ecole centrale de Lyon, 2013. http://www.theses.fr/2013ECDL0039/document.
Повний текст джерелаRecently, piezoelectric materials, like lead titanate zirconate Pb(ZrxTi1-x)O3 (PZT), zinc oxide ZnO, and the solid solution Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), increasingly receive intensive studies because of their innovative applications in the microelectromechanical systems (MEMS). In order to integrate them on silicon substrate, several preliminaries must be taken into considerations, e.g. buffer layer, bottom electrode. In this thesis, piezoelectric films (PZT and PMN-PT) have been successfully epitaxially grown on silicon and SOI (silicon-on-insulator) in the form of single crystal by sol-gel process. In fact, recent studies show that single crystalline films seem to possess the superior properties than that of polycrystalline films, leading to an increase of the performance of MEMS devices. The first objective of this thesis was to realize the epitaxial growth of single crystalline film of piezoelectric materials on silicon. The use of a buffer layer of gadolinium oxide(Gd2O3) or strontium titanate (SrTiO3 or STO) deposited by molecular beam epitaxy (MBE) has been studied in detail to integrate epitaxial PZT and PMN-PT films on silicon. For Gd2O3/Si(111) system, the study of X-ray diffraction (XRD) on the growth of PZT film shows that the film is polycrystalline with coexistence of the nonferroelectric parasite phase, i.e. pyrochlore phase. On the other hand, the PZT film deposited on STO/Si(001) substrate is successfully epitaxially grown in the form of single crystalline film. In order to measure the electrical properties, a layer of strontium ruthenate (SrRuO3 or SRO) deposited by pulsed laser deposition (PLD) has been employed for bottom electrode due to its excellent conductivity and perovskite crystalline structure similar to that of PZT. The electrical characterization on Ru/PZT/SRO capacitors demonstrates good ferroelectric properties with the presence of hysteresis loop. Besides, the relaxor ferroelectric PMN-PT has been also epitaxially grown on STO/Si and confirmed by XRD and transmission electrical microscopy (TEM). This single crystalline film has the perovskite phase without the appearance of pyrochlore. Moreover, the study of infrared transmission using synchrotron radiation has proven a diffused phase transition over a large range of temperature, indicating a typical relaxor ferroelectric material. The other interesting in the single crystalline PZT films deposited on silicon and SOI is to employ them in the application of MEMS devices, where the standard silicon techniques are used. The microfabrication process performed in the cleanroom has permitted to realize cantilevers and membranes in order to mechanically characterize the piezoelectric layers. Mechanical deflection under the application of an electric voltage could be detected by interferometry. Eventually, this characterization by interferometry has been studied using the modeling based on finite element method and analytic method. In the future, it will be necessary to optimize the microfabrication process of MEMS devices based on single crystalline piezoelectric films in order to ameliorate the electromechanical performance. Finally, the characterizations at MEMS device level must be developed for their utilization in the future applications
Breuss, Fritz. "WTO dispute settlement from an economic perspective. More failure than success?" Forschungsinstitut für Europafragen, WU Vienna University of Economics and Business, 2001. http://epub.wu.ac.at/1046/1/document.pdf.
Повний текст джерелаSeries: EI Working Papers / Europainstitut
Ramos, Ana V. "Epitaxial Cobalt-Ferrite Thin Films for Room Temperature Spin Filtering." Phd thesis, Université Pierre et Marie Curie - Paris VI, 2008. http://tel.archives-ouvertes.fr/tel-00394398.
Повний текст джерелаAlberternst, Stephan, and Caren Sureth-Sloane. "The Effect of Taxes on Corporate Financing Decisions - Evidence from the German Interest Barrier." WU Vienna University of Economics and Business, Universität Wien, 2015. http://epub.wu.ac.at/4884/1/SSRN%2Did2563572.pdf.
Повний текст джерелаSeries: WU International Taxation Research Paper Series
Simon, Yolande. "Prospects for the French fighter industry in a post-cold war environment is the future more than a mirage? /." Santa Monica, CA : RAND, 1993. http://www.rand.org/pubs/rgs%5Fdissertations/RGSD106/.
Повний текст джерелаGamoran, Jesse. "“I had this dream, this desire, this vision of 35 years – to see it all once more...”The Munich Visiting Program, 1960-1972." Oberlin College Honors Theses / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=oberlin1483517620887328.
Повний текст джерелаWidmann, Frédéric. "Epitaxie par jets moléculaires de GaN, AlN, InN et leurs alliages : physique de la croissance et réalisation de nanostructures." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10234.
Повний текст джерелаFontaine, Chantal. "Heteroepitaxie par jets moeculaires : systeme (ca,sr)f::(2) - gaas." Toulouse 3, 1987. http://www.theses.fr/1987TOU30135.
Повний текст джерелаChaluvadi, Sandeep kumar. "Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications." Thesis, Normandie, 2017. http://www.theses.fr/2017NORMC248/document.
Повний текст джерелаWe report a quantitative analysis of thickness dependent epitaxial strain-induced effects in La1-xSrxMnO3 (LSMO) (001) (x = 0.33) thin films of thicknesses (50, 25 and 12 nm) grown on various single crystal substrates such as SrTiO3 (STO) (001), STO buffered MgO (001), NdGaO3 (NGO) (110) and (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) (001) by Pulsed Laser Deposition (PLD) technique. We also report the composition dependent magnetic properties of LSMO thin films with x = 0.33 and 0.38 in particular grown onto LSAT (001) substrate by Molecular Beam Epitaxy (MBE). The study mainly includes measurements such as X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), temperature dependent four-probe resistivity, magnetization properties by Superconducting Quantum Interference Device (SQUID), magnetic anisotropy by Magneto-Optical Kerr Magnetometry (MOKE). Our results highlight the detailed study of angular evolution and thickness dependent magnetic anisotropy, remanence, coercivity and switching field in epitaxial LSMO thin films. Temperature-dependent studies are also performed on few selected films. We will also discuss the cause of magnetic anisotropy in LSMO films i.e., magneto-crystalline and magnetostriction anisotropy and the effects of steps or substrate mis-cut induced anisotropy
Fontaine, Christophe. "Hétéroépitaxie par jets moléculaires de semiconducteurs II-VI." Grenoble 1, 1986. http://www.theses.fr/1986GRE10062.
Повний текст джерелаGros, Patricia. "Epitaxie métal sur semi-conducteur II-VI : cas des terres rares sur CdTe." Grenoble 1, 1993. http://www.theses.fr/1993GRE10079.
Повний текст джерелаBassani, Franck. "Dopage indium d'hétérostructures CdTe/CdZnTe en épitaxie par jets moléculaires." Grenoble 1, 1993. http://www.theses.fr/1993GRE10043.
Повний текст джерелаHauge, Bård. "First for the Jew, then for the Gentile a comparative study of Paul's speeches in Acts 13:16-41 and Acts 17:22-31 /." Online full text .pdf document, available to Fuller patrons only, 1991. http://www.tren.com.
Повний текст джерелаTetsi, Emmanuel. "Développement de films minces à base de nanoparticules diélectriques et optimisatisation des conditions de dépôt pour fabriquer des condensateurs de découplage utilisés dans des assemblages à haute densité de modules électroniques." Thesis, Bordeaux, 2019. http://www.theses.fr/2019BORD0113/document.
Повний текст джерелаWithin the three-dimensional (3D) integration associated with the use of an increasing amount of integrated circuits (ICs), there is strong need of high capacitance density (≥ 1 μF.cm-2) decoupling capacitors, able to operate on large frequency bandwidth, in order to reduce the noise that can compromise the signal integrity in ICs. The main challenge of these capacitors relies on the deposition of thin films (≤ 100 nm) using innovative materials with high relative permittivity (ε_r > 200 à 1 GHz) and «low cost» technologies compatible with large scale integration.On one hand, the proposed approach in this thesis benefits from the possibility of synthetizing – by the supercritical fluid technology – and using Ba0.6Sr0.4TiO3 (BST) nanoparticles (Ø = 16 ± 2 nm, ε_r = 260 at1 kHz) as dielectric material and on the other hand, from the use of spray coating as technique for the deposition of these materials as thin films. First of all, the BST nanoparticles synthesized are functionalized with specific ligands (3-aminopropylphosphonic acid, APA), in order to obtain colloidal suspensions composed by aggregates with size (Ø < 100 nm) showing few fluctuations during two months. The other function of ligands is to improve the adhesion of the deposited films (self-assembling) on the copper (Cu) substrate. Different solvent are studied for the preparation of the solutions : N-méthyl-2-pyrrolidone (NMP), water, methanol and ethanol. The variation of different parameters related to the solution and the deposition technique helped us to define the optimal conditions leading to different thickness of film (200 – 1000 nm) based on pristine (BST) and functionalized nanoparticles (BST-APA). Using ethanol instead of NMP as solvent, enabled us to prevent de formation of a copper oxide layer and organic residues. After deposition of aluminum pads (Al) on BST or BST-APA films and used as top electrode, the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of capacitors with metal-insulator-metal (MIM) structure enabled us to achieve high capacitance density (~ 0.7 μF.cm-2) and low leakage current (~ 25 μA.cm-2) at 1 V.Keywords: MIM capacitors, thin films, supercritical fluids, Ba0.6Sr0.4TiO3, spray coating, nanofabrication in cleanroom
Guille, Claire. "Etude de la formation par epitaxie par jets moleculaires des interfaces entre inas et gaas." Paris 6, 1987. http://www.theses.fr/1987PA066415.
Повний текст джерелаPlšek, Radek. "Měření vlastností tenkých vrstev metodami zobrazovací reflektometrie a Kerrova jevu." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2008. http://www.nusl.cz/ntk/nusl-227912.
Повний текст джерелаTurco, Françoise. "Applications de techniques d'analyse in situ à l'épitaxie par jets moléculaires du système (Al, Ga, In) As." Grenoble INPG, 1988. http://www.theses.fr/1988INPG0016.
Повний текст джерелаArlery, Magali. "Etude par microscopie électronique à transmission de couches et structures semi-conductrices GaN/AlxGa(1-x)N." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10047.
Повний текст джерелаHnízdil, Milan. "Vývoj metod in-line tepelného zpracování." Doctoral thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2012. http://www.nusl.cz/ntk/nusl-234019.
Повний текст джерелаHo, King Tong. "The poetics of making a new cross-cultural aesthetics of art making in digital art through the creative integration of Western digital ink jet printmaking technology with Chinese traditional art substrates : this exegesis is submitted to AUT University in partial fulfillment of the degree of Doctor of Philosophy." Click here to access this resource online, 2007. http://hdl.handle.net/10292/333.
Повний текст джерелаSoulisse, Pierre. "Développement d'un dispositif expérimental pour la diffraction d'atomes rapides et étude de surfaces d'isolants ioniques." Phd thesis, Université Paris Sud - Paris XI, 2011. http://tel.archives-ouvertes.fr/tel-00625450.
Повний текст джерелаKvítek, Adam. "Tvorba metodiky plánování procesního řízení výroby." Master's thesis, Vysoké učení technické v Brně. Fakulta podnikatelská, 2018. http://www.nusl.cz/ntk/nusl-377625.
Повний текст джерелаHýl, Petr. "Slovinské národní divadlo v Lublani." Master's thesis, Vysoké učení technické v Brně. Fakulta architektury, 2009. http://www.nusl.cz/ntk/nusl-215582.
Повний текст джерелаSinghal, Shrawan. "Jet and coat of adaptive sustainable thin films." 2012. http://hdl.handle.net/2152/22157.
Повний текст джерелаtext
SU, YU-KAI, and 蘇郁凱. "Nickel oxide thin films deposited by dielectric barrier discharge plasma jet." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/629h4s.
Повний текст джерела國立高雄應用科技大學
化學工程與材料工程系博碩士班
106
In this study, nickel oxide (NiO) thin films were deposited on glass substrate at temperature of 250℃and 300℃ by a homemade low temperature atmospheic pressure plasma system. The axial gas flow rate of 50 sccm to 200 sccm are used in this study. No diffraction peak was observed at 250℃ by the x-ray diffraction analysis. Nither the formation of particles nor thin films could not be found on the surface by a FE-SEM, which might be due to the insufficient thermal energy of the substrate. When the substrate temperature was 300℃ and the axial flow rate of 50 sccm, the NiO thin films were not formed. However, the NiO thin films were formed at the axial flow rate of 100 sccm to 200 sccm, which is confirmed by x-ray diffraction patterns (JCPDS #47-1049). The transmittance of the NiO thin films was 48% (100 sccm), 38% (150 sccm) and 35% (200 sccm) in the visible region. The best condition for the formation of the NiO thin films was the axial flow rate of 100 sccm at 300℃. The NiO thin films had P-type characteristics by a hot-probe method. The resistivity, electrical conductivity, carrier concentration, and mobility of the NiO thin films are measured by a Hall effect.
Hsu, Chun-Ming, and 許峻銘. "Characterization of Oxide Thin Films Deposited by an Atmospheric Pressure Plasma Jet." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/35837955388715490041.
Повний текст джерела國立臺灣大學
化學工程學研究所
102
Deposition zinc oxide and silica-like thin films by the atmospheric pressure plasma jet were studied. To understand the plasma system property and application fields, we first investigate into the plasma optical emission spectra and gas temperature by changing the manipulate variable such as applied voltage, gas type and flowrate. Our research has demonstrated that higher applied voltage and lower gas flowrate will decrease the plasma gas temperature because of the different energy density. But the higher flowrate cause the plasma gas have more excited molecules. By the simulation of the plasma downstream intensity distribution, temperature trend and NO concentration, we found that the turbulence type matchs the downstream flowfield well and it illustrates the non-negligible of outside ambient gas. Futher, our study shows the plasma gas temperature and substrate temperature by the method of simulation molecules emission and thermalcouple measurement. The downstream gas temperature are between 950 K to 1200 K, which makes the plasma system belonging to high temperature plasma type. To deposit zinc oxide thin films, we use the 1.7 MHz nebulizer and nitrogen carrier gas to spray the precursor solution into the plasma system. The different precursor effect, applied voltage and gas flowrate effect were studied in this research. First, we found the only one precursor, zinc chloride, can deposit the less roughness, smooth and high crystalline thin films. Otherwise the particle-like structure appears. Next, to find the optimized condition of zinc chloride as precursor deposits zinc oxide thin films, the gas flowrate and applied voltage were setting as manipulate variable. In our study, we found that under the applied voltage 275 V and gas flow rate 30 slm, the deposition has best film property with resistivity of 1.4 ohm-cm and transimmion near 90 %. Otherwise the deposition will appear the sheet-like structure and has poor optical and electric property. By the XRD identified, we found the sheet-like structure is the ZHC (Zn5(OH)8Cl2‧H2O), which is the intermedia of the reaction. The appearance of ZHC can be explained by the non-enough power and shorter residence times in those condition. In next research topic, the silica-like thin films deposited by the APPJ were studied. In this system, we use the bubbler method with nitrogen as the carrier gas to send the saturated vapor pressure to the plasma system. Three different precursors were tested, which are tetraethylorthosilicate (TEOS), Hexamethyldisiloxane (HMDSO) and hexamethyldisilazane (HMDSN). Each precursor has their optimized deposited condition and all deposition show the inorganic-like silica structure. In the TEOS system, we found the deposition rate was much lower than the others but the film has the advantage of smoothness and well-coverage. In the HMDSN system, the deposition rate were rapid but the films have worst leakage current density. It is in regard to its complicated bonding and structure. On the contrary, the HMDSO system has advantage of higher deposition rate, less-roughness and lower leakage current. In this research, we use films deposited from HMDSO as the dielectric layer in the thin films transistor (TFT) and it can work quite well. This TFT result shows the potential and capable of this atmospheric pressure deposited films as the device’s dielectric layer.
Chiang, Kai-Chieh, and 姜愷傑. "In‐process Monitoring of Atmospheric Pressure Pulsed Plasma Jet on Thin Film Deposition." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/09717359323822858295.
Повний текст джерела國立臺灣大學
機械工程學研究所
105
This study is focused on atmospheric pressure plasma jet (APPJ) system which is driven by direct current pulses and deposits thin film of zinc oxide doped with gallium. This system, however, is different from low pressure plasma‐enhanced chemical vapor deposition (PECVD). This works under atmospheric environment; therefore, cost of vacuum pump system is avoided. With the grid‐shaped path, this system is covered varying size of thin film area. This study aims on in‐time monitoring of the process. Plasma density is estimated by analyzing the voltage and current signals into nozzle head. Plasma status is also determined by plasma afterglow with temperature and outlet length. Plasma density and afterglow are used to evaluate the quality of thin films. Moreover, phase angles between voltage and current is observed to be a reference to the processing quality. With all the data combined, it is able to establish in‐time process monitoring. Plasma diagnose by input main gas, voltage and pulses is focused in this thesis. While lower the main gas flow rate, the estimated plasma density is higher and same to the afterglow length and temperature. On the other hand, phase angle is lower and thus the sheet resistant is lower. As for the input pulses, while pulse‐on time, Ton, is longer, the estimated plasma density is higher, as well as the afterglow length and temperature is higher. Therefore, the sheet resistant is lower. However, the pulse frequency is not related to the estimated plasma density, which is analyzed by electrical signals during Ton while frequency is associated with Toff, the pulse‐off time. Despite this, as the input frequency increasing, the phase angle decreases. The lowest sheet resistance is observed while the phase angle is under 1°. The input voltage is found to be related with the input frequency in this study, as that the pulse frequency for lowest sheet resistant varies with the different input voltage. While the input voltage is 160, 180 or 200V, as the different frequency input, the phase angles and sheet resistances are in the same trend. The lowest resistances of thin films are all found under the lowest phase angle of electrical signals, the hottest afterglow and the longest length of afterglow. The frequency at this moment is seen to be the best for the process. At the experiment of pins, the lowest sheet resistance is found when pins are out of the nozzle. Nevertheless, the gas flow rate is high when without pins, thus, the estimated plasma density is low. At the end of the study, the steady of process is examined with large area deposition. The estimated plasma density varies within 7% and the result of sheet resistance meets the manufacturing standard.
Wang, Sha-Man, and 王紗曼. "The Process Investigation of Polymer Thin Film Transistor by Ink-Jet Printing Technology." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/13112786108443865484.
Повний текст джерела元智大學
光電工程研究所
94
The organic semiconductor used as the active layer of thin film transistor have widely been widely studied in recent years. Since the organic film of organic thin film transistor (OTFT) is fabricated on the dielectric layer, the performance of OTFT strongly depends on the semiconductor/dielectric interface due to the physical and chanical interactions between the organic layer and the dielectric layer. In this paper, Poly(3-hexylthiophene)(P3HT)was used as an active layer of OTFT and the dielectric surface of SiO2 gate were treated by the process of normal wet-cleaning、O2-plasma、hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (OTS). The purpose of this work is to show that the performance canbe improved with different treatments of dielectric/polymer interface. By using the advantages of polymer dissolved in the organic solvent, the polymer solution can be ink-jet printed with ink-jet technique to fabricate the semiconductor layer of OTFT and to reach the purpose of low-cost and mass-production. By using direct ink-jet printing of solution process, it can provide a new route to fabricate OTFT devices. The experimental result show that the surface treatment of SiO2 with OTS can be allowed to enhance the mobility of the carrier. The surface potential changed by using self-assembled monolayer like OTS technique can lead to hydrophobic state so that the mobility is improved. The highest mobility obtained from OTS-treated sample is nearly 2.026×10-2cm2/Vs. The semiconductor layer of thin film transistor fabricated by ink-jet printing polymer solution process has already been succeeded in this laboratory at present. The measurent of mobility obtained from ink-jet printed sample can achieve 3.892×10-3cm2/Vs. However, it is unsatisfactory compared with spin-coating devices. If there experimented in ink-jet printing process can further be modified, the device performances by also be promted.
Wu, Ming-Yu, and 吳明裕. "Cutting Analysis of Thin Brittle Plate by High-Pressure Mini-Slurry Suspension Jet." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/92913918812523920929.
Повний текст джерела國立清華大學
動力機械工程學系
88
The current study analyzes the properties of glass and silicon kerf under Abrasive Suspension Jet (ASJ) cutting. The system consists of a high-pressure cylinder and piston. The highly pressurized water from the pump pushes the isolator downward while the premixed slurry is pumped through the orifice. The system is operated under 105 MPa with a 0.1-mm diameter orifice. The relations between the abrasive volume concentration, pressure, traverse speed, abrasive size, the kerf width at upper, bottom and affected zones, kerf ratio, kerf taper, roughness, and the maximum traverse speed were studied. Scanning Electron Microscope (SEM) and optical microscope were used to observe the surface waviness of kerf, plastic flow and trace of abrasives under impact. The experiment results show that the maximum traverse speed occurs at the pressure of 105 MPa, 5% volume concentration, and 1500 mesh SiC abrasive, while the minimum roughness occurs at the pressure of 70 MPa and 2000 mesh SiC abrasive.
Lin, Wei-Hsiang, and 林暐翔. "Fabrication and Performance Improvement on All Ink-Jet Printed Flexible Organic Thin Film Transistor." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/83293950040239026060.
Повний текст джерела臺灣大學
工程科學及海洋工程學研究所
95
With the advancement of the organic electronic material, many flexible electronics applications appear. Within all these applications, OLED, LCD, e-paper, RFID-tag, sensor , solar cell, etc. are some of the most well-known examples. In addition to develop new materials, associated solution process were also investi閘極d seriously with an attempt to improve manufacturing efficiency as well. To satisfly the low temperature processing requirements for plastic substrate, the ink-jet printing has become one of best candidate for developing the next-generation fabrication process for flexible electronics due to its high degree of freedom, high accurate, low cost, etc. In this thesis, the printhead made by MicroFab Technologies, Inc. was integrated with the newly developed pneumatics controller system, piezoelectric driver system, ink-jet observing system, substrate positioning system and software to achieve stable fabricating process with highly yield and highly repeatable. Moreover, this newly developed system can minimize the device and perform accurate fabrication requirements such as controllable channel length, film thickness, etc. OTFT and silver conducting lines were successfully fabricated in this thesis. The fabrication process used PI tape as the substrate, PEDOT/PSS doping EG as the conducting material, PVP blend PMF as the dielectric layer, P3HT or pentacne precursor as the active layer, to arrive at an all ink-jet, all organic OTFT, To further improve the electric performance techniques such as new package, reducing thickness of active layer, surface treatment, and investigate the influence of channel length and dielectric layer thickness, etc. were all integrated in order to obtain the best OTFT circuitry performance.